CN101770942B - Method and device for measuring temperature by P-type substrate silicon wafer - Google Patents
Method and device for measuring temperature by P-type substrate silicon wafer Download PDFInfo
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- CN101770942B CN101770942B CN2008102473165A CN200810247316A CN101770942B CN 101770942 B CN101770942 B CN 101770942B CN 2008102473165 A CN2008102473165 A CN 2008102473165A CN 200810247316 A CN200810247316 A CN 200810247316A CN 101770942 B CN101770942 B CN 101770942B
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Abstract
The invention relates to the technical field of the semiconductor chip technology, in particular to a method for measuring temperature by using a P-type substrate silicon wafer for improving the accuracy of the detection problem in the annealing process after the metal deposits. The method of the embodiment of the invention comprises the following steps: making the P-type substrate silicon wafer in continuous contact with an entity at a constant temperature; after the P-type substrate silicon wafer is in continuous contact with the entity for a preset time, determining a current resistance of the P-type substrate silicon wafer; according to a corresponding relation between a resistance and a temperature of the P-type substrate silicon wafer, determining a temperature corresponding to the current resistance of the P-type substrate silicon wafer; and using the determined temperature as the constant temperature of the entity. By adopting the method of the embodiment of the invention, the stability and the production efficiency of the produced semiconductor wafer can be improved.
Description
Technical field
The present invention relates to semiconductor chip technology field, particularly a kind of P type silicon substrate that utilizes is measured method of temperature and device.
Background technology
In semiconductor crystal wafer foundry industry, metal deposit post growth annealing carries out between 750 ℃-850 ℃ usually.
Because the temperature difference, the semiconductor die fenestra of producing has corresponding variation, thus producing the semiconductor die bowlder, must the real temperature of strict control, the error that makes real temperature and desirable temperature is in the scope that can accept.
Such as: the desirable temperature of making semiconductor crystal wafer is 800 ℃, need then to guarantee that the temperature of metal deposit post growth annealing is about 800 ℃, if the temperature deviation of metal deposit post growth annealing is too big, such as 700 ℃, the semiconductor crystal wafer of then producing will be unstable.
At present, the monitoring of this temperature section is adopted the mode (as Ti/TiN, Co/CoSi2 etc.) of test resistance after depositing metal nitride or the silicide anneal.
But the reaction of metal pair temperature is too responsive, and metallic compound is not enough to the susceptibility of temperature, can not well judge the drift of temperature by the variation of resistance.
In sum, in metal deposit post growth annealing, there is very large deviation in the temperature of detection with the temperature of reality, can exert an influence to the semiconductor crystal wafer of producing at present.
Summary of the invention
The embodiment of the invention provides a kind of P of utilization type silicon substrate to measure method of temperature and device, is used for improving the accuracy of the problem that detects at metal deposit post growth annealing.
The method of a kind of P of making type silicon substrate that the embodiment of the invention provides comprises:
Choosing electrical resistivity range is the P type silicon substrate of 15ohm/cm～20ohm/cm;
The mode that the described P type silicon substrate of choosing adopts ion to inject is injected phosphonium ion;
Wherein, the dosage range of the phosphonium ion in the described P type silicon substrate is: 5 * 10
13Ions/cm
2～5 * 10
14Ions/cm
2
Employed energy range is when described P type silicon substrate being carried out the ion injection: 50KEV～200KEV.
A kind of P of utilization type silicon substrate that the embodiment of the invention provides is measured method of temperature, comprising:
P type silicon substrate is continued to contact with the entity that is in constant temperature;
With after described entity continues to contact a setting-up time, determine the current resistance of described P type silicon substrate at described P type silicon substrate;
According to the resistance of described P type silicon substrate and the corresponding relation of temperature, determine the temperature of the current resistance correspondence of described P type silicon substrate;
The described temperature of determining is in the temperature of constant temperature as described entity;
Wherein, described P type silicon substrate generates according to following method: choosing electrical resistivity range is the P type silicon substrate of 15ohm/cm～20ohm/cm; The mode that the described P type silicon substrate of choosing adopts ion to inject is injected phosphonium ion; The dosage range of the phosphonium ion in the wherein said P type silicon substrate is: 5 * 10
13Ions/cm
2～5 * 10
14Ions/cm
2Employed energy range is when described P type silicon substrate being carried out the ion injection: 50KEV～200KEV.
A kind of P of utilization type silicon substrate that the embodiment of the invention provides is measured the device of temperature, comprising:
The resistance determination module, be used for P type silicon substrate with after the entity that is in constant temperature continues to contact a setting-up time, determine the current resistance of described P type silicon substrate;
Temperature determination module is used for determining the temperature of the current resistance correspondence of described P type silicon substrate according to the resistance of described P type silicon substrate and the corresponding relation of temperature, the described temperature of determining is in the temperature of constant temperature as described entity;
Wherein, described P type silicon substrate generates according to following method: choosing electrical resistivity range is the P type silicon substrate of 15ohm/cm～20ohm/cm; The mode that the described P type silicon substrate of choosing adopts ion to inject is injected phosphonium ion; The dosage range of the phosphonium ion in the wherein said P type silicon substrate is: 5 * 10
13Ions/cm
2～5 * 10
14Ions/cm
2Employed energy range is when described P type silicon substrate being carried out the ion injection: 50KEV～200KEV.
The embodiment of the invention continues P type silicon substrate to contact with the entity that is in constant temperature; With after described entity continues to contact a setting-up time, determine the current resistance of described P type silicon substrate at described P type silicon substrate; According to the corresponding relation of resistance that sets in advance and temperature, determine the temperature of the current resistance correspondence of described P type silicon substrate; The described temperature of determining is in the temperature of constant temperature as described entity.Since can be in metal deposit post growth annealing accurate detected temperatures, thereby improved the stability of the semiconductor crystal wafer of producing and the efficient of production, avoid because the inaccurate needs of temperature detection are produced the waste that brings again.
Description of drawings
Figure 1A makes the method for P type silicon substrate for the embodiment of the invention;
Figure 1B utilizes P type silicon substrate for the embodiment of the invention and measures method of temperature;
Fig. 2 utilizes P type silicon substrate for the embodiment of the invention and measures the device of temperature;
Fig. 3 A is embodiment of the invention resistance and vs. temperature schematic diagram;
Fig. 3 B is an embodiment of the invention repeatability checking schematic diagram.
Embodiment
In the embodiment of the invention, with P type silicon substrate with after the entity that is in constant temperature continues to contact a setting-up time, according to the corresponding relation of resistance that sets in advance and temperature, determine the temperature of the current resistance correspondence of P type silicon substrate, and the Current Temperatures of entity just equals the temperature determined.
Shown in Figure 1A, the method that the embodiment of the invention is made P type silicon substrate comprises following the following step:
Wherein, the dosage range of the phosphonium ion in the P type silicon substrate is: 5 * 10
13Ions/cm2～5 * 10
14Ions/cm
2(unit is every square centimeter in an ion);
Employed energy range is when P type silicon substrate being carried out the ion injection: 50KEV～200KEV (unit is a kilo electron volt).
In specific implementation process, the dosage of the phosphonium ion in the P type silicon substrate is: 1.0 * 10
14Ions/cm
2,
P type silicon substrate is carried out ion when injecting employed energy be: 70KEV, then can further improve the accuracy rate of definite temperature.
Need to prove, unless specified otherwise, the P type silicon substrate in the embodiment of the invention of introducing below all meets the content requirement of above-mentioned P type silicon substrate.
Shown in Figure 1B, the embodiment of the invention is utilized P type silicon substrate to measure method of temperature and is comprised the following steps:
Wherein, to be in the temperature range of constant temperature be 600 ℃～900 ℃ to entity.
As sporocarp is RTP (Rapid Thermal Processing, high speed heat treatment) board, and then to be in the temperature range of constant temperature be 750 ℃～850 ℃ to entity.
Because P type silicon substrate just has been under the temperature constant state, resistance has significantly and changes, so after must waiting for a setting-up time, the band resistance is carried out steady state, could determine temperature, then can further include between step 201 and the step 202:
The resistance of determining P type silicon substrate is in steady state, and steady state is that the variation of the resistance of P type silicon substrate in the unit interval is less than threshold value.
Suppose 800 ℃ of situations, setting-up time is 30 seconds, and the unit interval is 3 seconds, and threshold value is 5ohm
After the temperature of P type silicon substrate reaches 800 ℃, resistance can constantly change, such as the 1st second was 350ohm, just became 340ohm on the 2nd second, by the time just become 320ohm in the 30th second, just became 311ohm on the 31st second, just became 309ohm on the 32nd second, the resistance that then at this moment can determine P type silicon substrate is in steady state, can be 30 seconds with time set so just.
In specific implementation process, the dosage difference of the phosphonium ion in the P type silicon substrate, employed energy difference when described P type silicon substrate being carried out the ion injection, the time of setting changes to some extent, such as: the dosage of the phosphonium ion in the P type silicon substrate is 1.0 * 10
14Ions/cm
2, described P type silicon substrate is carried out ion when injecting employed energy be 70KEV, need wait until 20 seconds, the resistance of P type silicon substrate just can be in steady state, if the P type silicon substrate that uses like this is 1.0 * 10 as the dosage of phosphonium ion
14Ions/cm
2, employed energy is 70KEV when carrying out the ion injection, then needing time set is 20 seconds.
Wherein, if the dosage of phosphonium ion and carry out ion employed energy difference when injecting in the P type silicon substrate, the corresponding relation of resistance and temperature also can be different.
Dosage such as the phosphonium ion in the P type silicon substrate is 1.0 * 10
14Ions/cm
2, described P type silicon substrate is carried out ion when injecting employed energy be 70KEV, then earlier with temperature constant temperature to 750 ℃, treat 20 seconds after, determine the resistance of P type silicon substrate;
Then with temperature constant temperature to 800 ℃, treat 20 seconds after, determine the resistance of P type silicon substrate;
Then with temperature constant temperature to 800 ℃, treat 20 seconds after, determine the resistance of P type silicon substrate;
So just formed the curve chart of a resistance and vs. temperature, referring to Fig. 3 A.
As can be seen, temperature differs 50 ℃ from Fig. 3 A, and resistance differs 44ohm (being equivalent to 1 ℃ of temperature change, change in resistance 0.88ohm), can be similar to think 1 ℃ of variations in temperature, and resistance changes 1ohm, so just can set up resistance and vs. temperature.
Certainly, in order to make the temperature of measurement more accurate, also can be per 1 ℃, measure one time resistance.
Need to prove, because the content difference of phosphonium ion in the actual P type silicon substrate, the corresponding relation of resistance and temperature also can be different, so the resistance of using in the step 202 and the corresponding relation of temperature must be and the identical P type silicon substrate (content that is the phosphonium ion in the P type silicon substrate is identical) of P type silicon substrate in the step 200 resistance that measures and the corresponding relation of temperature.
In specific implementation process, because the character and the instrument of P type silicon substrate, factor affecting such as environment, resistance in the current resistance of the P type silicon substrate of determining and the corresponding relation of resistance and temperature is might not can identical, such as: the resistance of determining is 321.5ohm, and the resistance in the corresponding relation has 321ohm and 322ohm, at this moment can from 321ohm and 322ohm, select a resistance at random, can certainly be according to setting, such as selecting big resistance, then select 322ohm, can also be earlier to the processing that rounds up of the decimal point of the resistance determined, and then according to the definite corresponding temperature of corresponding relation, be that 321.5ohm is rounded to 322ohm, then determine the temperature of 322ohm correspondence according to corresponding relation.
As sporocarp is the RTP board, can be in the step 202 according to the corresponding relation of resistance and temperature, and the temperature of the resistance correspondence of determining in the determining step 201 then illustrates the stable fine of RTP board; Opposite, if can not be according to the corresponding relation of resistance and temperature in the step 202, the temperature of the resistance correspondence of determining in the determining step 201 can think that then the temperature of RTP board has drift, that is to say the stable bad of RTP board, promptly can also monitor the stability of RTP board.
From Fig. 2 B as can be seen: at constant temperature is under 800 ℃ of conditions, and the dosage of the phosphonium ion in the P type silicon substrate is 1.0 * 10
14Ions/cm
2Described P type silicon substrate is carried out ion when injecting employed energy be that 7 P type silicon substrates of 70KEV have carried out 7 tests respectively, result's resistance of each P type silicon substrate after through 20 seconds all remains on a numerical value substantially, illustrates that the embodiment of the invention has good reproducibility.
As shown in Figure 2, the embodiment of the invention utilizes the device of P type silicon substrate measurement temperature to comprise: resistance determination module 10 and temperature determination module 20.
Wherein, resistance determination module 10 can be KLA-Tencor Rs35.
Wherein, to be in the temperature range of constant temperature be 600 ℃～900 ℃ to entity.
As sporocarp is the RTP board, and then to be in the temperature range of constant temperature be 750 ℃～850 ℃ to entity.
Because P type silicon substrate just has been under the temperature constant state, resistance has significantly and changes, so after must waiting for a setting-up time, the band resistance is carried out steady state, could determine temperature, then resistance determination module 10 also is used for:
, determine before the current resistance of P type silicon substrate with after entity continues to contact a setting-up time at P type silicon substrate, determine that the resistance of P type silicon substrate is in steady state, steady state is that the variation of the resistance of P type silicon substrate in the unit interval is less than threshold value.
Suppose 800 ℃ of situations, setting-up time is 30 seconds, and the unit interval is 3 seconds, and threshold value is 5ohm
After the temperature of P type silicon substrate reaches 800 ℃, resistance can constantly change, such as the 1st second was 350 ohm, just became 340ohm on the 2nd second, by the time just become 320ohm in the 30th second, just became 311ohm on the 31st second, just became 309ohm on the 32nd second, the resistance that then at this moment can determine P type silicon substrate is in steady state, can be 30 seconds with time set so just.
In specific implementation process, the dosage difference of the phosphonium ion in the P type silicon substrate, employed energy difference when described P type silicon substrate being carried out the ion injection, the time of setting changes to some extent, such as: the dosage of the phosphonium ion in the P type silicon substrate is 1.0 * 10
14Ions/cm
2, described P type silicon substrate is carried out ion when injecting employed energy be 70KEV, need wait until 20 seconds, the resistance of P type silicon substrate just can be in steady state, if the P type silicon substrate that uses like this is 1.0 * 10 as the dosage of phosphonium ion
14Ions/cm
2, employed energy is 70KEV when carrying out the ion injection, then needing time set is 20 seconds.
Wherein, if the dosage of phosphonium ion and carry out ion employed energy difference when injecting in the P type silicon substrate, the corresponding relation of resistance and temperature also can be different.
Dosage such as the phosphonium ion in the P type silicon substrate is 1.0 * 10
14Ions/cm
2, described P type silicon substrate is carried out ion when injecting employed energy be 70KEV, then earlier with temperature constant temperature to 750 ℃, treat 20 seconds after, determine the resistance of P type silicon substrate;
Then with temperature constant temperature to 800 ℃, treat 20 seconds after, determine the resistance of P type silicon substrate;
Then with temperature constant temperature to 800 ℃, treat 20 seconds after, determine the resistance of P type silicon substrate;
So just formed the curve chart of a resistance and vs. temperature, referring to Fig. 3 A.
As sporocarp is the RTP board, and temperature determination module 20 can be determined the temperature of the resistance correspondence that resistance determination module 10 is determined according to the corresponding relation of resistance and temperature, and the stable fine of RTP board then is described; Opposite, if temperature determination module 20 can not be according to the corresponding relation of resistance and temperature, determine the temperature of the resistance correspondence that resistance determination module 10 is determined, can think that then the temperature of RTP board has drift, that is to say the stable bad of RTP board, promptly can also monitor the stability of RTP board.
From the foregoing description as can be seen: the embodiment of the invention continues P type silicon substrate to contact with the entity that is in constant temperature; With after described entity continues to contact a setting-up time, determine the current resistance of described P type silicon substrate at described P type silicon substrate; According to the corresponding relation of resistance that sets in advance and temperature, determine the temperature of the current resistance correspondence of described P type silicon substrate; The described temperature of determining is in the temperature of constant temperature as described entity.Since can be in metal deposit post growth annealing accurate detected temperatures, thereby improved the stability of the semiconductor crystal wafer of producing and the efficient of production, avoid because the inaccurate needs of temperature detection are produced the waste that brings again.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (9)
1. one kind is utilized P type silicon substrate to measure method of temperature, it is characterized in that this method comprises:
P type silicon substrate is continued to contact with the entity that is in constant temperature;
With after described entity continues to contact a setting-up time, determine the current resistance of described P type silicon substrate at described P type silicon substrate;
According to the resistance of described P type silicon substrate and the corresponding relation of temperature, determine the temperature of the current resistance correspondence of described P type silicon substrate;
The described temperature of determining is in the temperature of constant temperature as described entity;
Wherein, described P type silicon substrate generates according to following method:
Choosing electrical resistivity range is the P type silicon substrate of 15ohm/cm～20ohm/cm; The mode that the described P type silicon substrate of choosing adopts ion to inject is injected phosphonium ion; The dosage range of the phosphonium ion in the wherein said P type silicon substrate is: 5 * 10
13Ions/cm
2～5 * 10
14Ions/cm
2Employed energy range is when described P type silicon substrate being carried out the ion injection: 50KEV～200KEV.
2. the method for claim 1 is characterized in that, described P type silicon substrate employed energy when carrying out the ion injection is: 70KEV.
3. method as claimed in claim 1 or 2 is characterized in that, the dosage of the phosphonium ion in the described P type silicon substrate is: 1.0 * 10
14Ions/cm
2
4. the method for claim 1 is characterized in that, the temperature range that described entity is in constant temperature is: 600 ℃～900 ℃.
5. method as claimed in claim 4 is characterized in that, if described entity is a high speed heat treatment RTP board, the temperature range that described entity is in constant temperature is: 750 ℃～850 ℃.
6. the method for claim 1 is characterized in that,, determines also to comprise before the current resistance of described P type silicon substrate with after described entity continues to contact a setting-up time at described P type silicon substrate:
The resistance of determining described P type silicon substrate is in steady state, and described steady state is that the variation of the resistance of P type silicon substrate in the unit interval is less than threshold value.
7. as the described method of claim 3 claim, it is characterized in that described setting-up time is 20 seconds.
8. device that utilizes P type silicon substrate to measure temperature is characterized in that this device comprises:
The resistance determination module, be used for P type silicon substrate with after the entity that is in constant temperature continues to contact a setting-up time, determine the current resistance of described P type silicon substrate;
Temperature determination module is used for determining the temperature of the current resistance correspondence of described P type silicon substrate according to the resistance of described P type silicon substrate and the corresponding relation of temperature, the described temperature of determining is in the temperature of constant temperature as described entity;
Wherein, described P type silicon substrate generates according to following method:
Choosing electrical resistivity range is the P type silicon substrate of 15ohm/cm～20ohm/cm; The mode that the described P type silicon substrate of choosing adopts ion to inject is injected phosphonium ion; The dosage range of the phosphonium ion in the wherein said P type silicon substrate is: 5 * 10
13Ions/cm
2～5 * 10
14Ions/cm
2Employed energy range is when described P type silicon substrate being carried out the ion injection: 50KEV～200KEV.
9. device as claimed in claim 8 is characterized in that, described resistance determination module also is used for:
At described P type silicon substrate with after described entity continues to contact a setting-up time, determine before the current resistance of described P type silicon substrate, the resistance of determining described P type silicon substrate is in steady state, and described steady state is that the variation of the resistance of P type silicon substrate in the unit interval is less than threshold value.
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|---|---|---|---|
| CN2008102473165A CN101770942B (en) | 2008-12-29 | 2008-12-29 | Method and device for measuring temperature by P-type substrate silicon wafer |
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| CN101770942A CN101770942A (en) | 2010-07-07 |
| CN101770942B true CN101770942B (en) | 2011-08-24 |
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| CN115692236A (en) * | 2022-12-16 | 2023-02-03 | 广州粤芯半导体技术有限公司 | Method for detecting RTA temperature in silicade process |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1147571A (en) * | 1995-06-24 | 1997-04-16 | 现代电子产业株式会社 | Method of manufacturing silicon wafer |
| CN1519915A (en) * | 2003-01-15 | 2004-08-11 | ������������ʽ���� | Method of mfg. semiconductor device |
| CN1794432A (en) * | 2005-11-11 | 2006-06-28 | 中国电子科技集团公司第五十五研究所 | Semiconductor platform technology |
-
2008
- 2008-12-29 CN CN2008102473165A patent/CN101770942B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1147571A (en) * | 1995-06-24 | 1997-04-16 | 现代电子产业株式会社 | Method of manufacturing silicon wafer |
| CN1519915A (en) * | 2003-01-15 | 2004-08-11 | ������������ʽ���� | Method of mfg. semiconductor device |
| CN1794432A (en) * | 2005-11-11 | 2006-06-28 | 中国电子科技集团公司第五十五研究所 | Semiconductor platform technology |
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Effective date of registration: 20220720 Address after: 518116 founder Microelectronics Industrial Park, No. 5, Baolong seventh Road, Baolong Industrial City, Longgang District, Shenzhen, Guangdong Province Patentee after: SHENZHEN FOUNDER MICROELECTRONICS Co.,Ltd. Address before: 100871, Beijing, Haidian District Cheng Fu Road 298, founder building, 9 floor Patentee before: PEKING UNIVERSITY FOUNDER GROUP Co.,Ltd. Patentee before: SHENZHEN FOUNDER MICROELECTRONICS Co.,Ltd. |