CN101748367A - Device and method used for plating films on cavity surfaces of semiconductor lasers - Google Patents
Device and method used for plating films on cavity surfaces of semiconductor lasers Download PDFInfo
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- CN101748367A CN101748367A CN200910200648A CN200910200648A CN101748367A CN 101748367 A CN101748367 A CN 101748367A CN 200910200648 A CN200910200648 A CN 200910200648A CN 200910200648 A CN200910200648 A CN 200910200648A CN 101748367 A CN101748367 A CN 101748367A
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Abstract
The invention relates to a device and a method used for plating films on the cavity surfaces of semiconductor lasers. The device comprises three wafer chucks fixed on a vapor deposition platform by elevation angles. When in use, firstly, lasers cleaved from the cavity surfaces are placed on the three wafer chucks, and the cavity surfaces press close to the edges of the wafer chucks; then the lasers are fixed by utilizing spring strips, and the upper surfaces of the lasers are protected by the spring strips; and finally, the wafer chucks are arranged on the vapor deposition platform, and the installed vapor deposition platform is put into a vapor deposition cavity body for vapor deposition. In the process of vapor deposition, due to the fact that the upper surfaces of the lasers are covered by the spring strips, the lower surfaces thereof press close to the wafer chucks, and the cavity surfaces of the lasers and the evaporation plane form a certain elevation angle, and the films can not be evaporated on the upper and lower surfaces of the lasers under protection, the possibility that metallic short circuit is caused or metal electrodes are covered by the insulation films in vapor deposition is effectively avoided. A clamp provided by the invention has simple structure, easy processing, low processing cost, long service life and simple operation, thereby being easy to popularize and use.
Description
Technical field
The invention belongs to semiconductor laser field, particularly relate to a kind of apparatus and method that are used for plating films on cavity surfaces of semiconductor lasers.
Background technology
Semiconductor laser has gained great popularity with advantages such as its volume are little, in light weight, power is high, the life-span is long, easy to use since 1962 come out.Generally, semiconductor laser is formed the resonant-cavity surface of laser apparatus by himself cleavage surface, because the reflectivity of laser apparatus cleavage surface only about 30%, scattered power be near 70%, this has nearly 60% to slattern from rear facet because of scattering with regard to the laser that makes laser apparatus produce.For this reason, people often adopt the method for cavity surface film coating, improve the chamber face reflectivity of rear facet, make more laser apparatus be subjected to the reflection of rear facet and from front facet output, have improved the optical output power of laser apparatus.
The laser cavity surface plated film generally can adopt at back cavity and ante-chamber two-chamber face or back cavity list chamber face evaporation highly reflecting films, perhaps plates highly reflecting films and low-reflection film respectively.Table 1 is two kinds of different chamber face processing modes of natural cleavage surface and rear facet evaporation highly reflecting films for rear facet before the laser apparatus, and the calculated value (establishing the long L=3mm of resonator cavity) of corresponding mirror loss α m.Can find out that from table 1 the chamber face is not taked any coating process, mirror loss is quite big, can reduce the mirror loss of laser apparatus greatly, thereby reduce the threshold current density of laser apparatus and the Output optical power of raising laser apparatus rear facet evaporation highly reflecting films.
Rear facet adopts the mirror loss contrast of the long laser apparatus in 3.0mm chamber of different treatment mode before the table 1
In view of the importance of above-mentioned plating films on cavity surfaces of semiconductor lasers, all smaller in the size of considering semiconductor laser, therefore in plating films on cavity surfaces of semiconductor lasers technology, need a kind of stablizing and effective film coating method.Because the selected thin-film material of plating films on cavity surfaces of semiconductor lasers might be that metal (such as the Au of high-reflecting film) or insulating material are (such as the transparent Al of mid and far infrared wave band
2O
3), and thin film evaporation has certain diversity when carrying out cavity surface film coating technology, so the chip of laser upper and lower surface is easy to by Coating Materials on the evaporation.If laser apparatus upper and lower surface and chamber face be all by metal on the evaporation, then laser apparatus upper/lower electrode short circuit; If the laser apparatus upper and lower surface is drawn technology all by insulating material on the evaporation, then for the follow-up electrode of laser apparatus and is brought difficulty.Therefore invent a kind of effective ways and unit clamp that is used for plating films on cavity surfaces of semiconductor lasers, improve the reliability of its cavity surface film coating,, promote the development of semiconductor laser to have crucial meaning for improving the semiconductor laser performance.
Plating films on cavity surfaces of semiconductor lasers technology adopts thin film evaporation technologies such as electron beam evaporation or thermal evaporation usually, and to evaporation source, thin-film material moves to laser cavity surface under beam bombardment or heating with the laser cavity surface vertical surface, thereby forms film.In traditional technology, because in electron beam evaporation or the thermal evaporation technology, the motion of material molecule is not to move vertically upward completely, but the motion of part molecule and vertical surface have certain included angle, therefore be easy in the traditional technology form film, and then cause short circuit of laser apparatus upper/lower electrode or electrode surface to be insulated the material covering in the upper and lower surface of laser apparatus.
Summary of the invention
Technical problem to be solved by this invention provides a kind of device and effective ways that are used for plating films on cavity surfaces of semiconductor lasers, to obtain high-quality laser cavity surface film, obtain low mirror loss, realize the semiconductor laser of low-threshold power flow density, high non-stop run temperature, laser electrode short circuit or the metal electrode of effectively avoiding evaporation process to introduce are insulated the problem that material covers.
The technical solution adopted for the present invention to solve the technical problems is: a kind of device that is used for plating films on cavity surfaces of semiconductor lasers is provided, comprise the wafer-supporting platform that is used for fixing chip of laser and be used for installing the evaporation platform that wafer-supporting platform also can be fixed on electron beam evaporation equipment, the spring piece that is used for fixing chip of laser is installed in described wafer-supporting platform both sides, the width of spring piece is as the criterion so that entire chip is covered under the spring piece, the retaining screw of regulating the compressing tablet dynamics is arranged on the spring piece, a side of wafer-supporting platform becomes 60 °～80 ° angles with horizontal plane, polished finish has been carried out on the surface of wafer-supporting platform; Described evaporation platform is circular stainless steel platform, and wafer-supporting platform is installed in the middle of the evaporation platform, and the pedestal that is higher than wafer-supporting platform is equipped with in both sides, and circular evaporation platform periphery has cutting.
Described wafer-supporting platform is a stainless steel, and width is 80mm, and length is 500mm; Described evaporation platform is circular stainless steel platform, and diameter is 750mm.
A kind of described a kind of method that is used for the device of plating films on cavity surfaces of semiconductor lasers of claim 1 of using comprises the following steps:
(1) utilizes scribing machine that chip of laser is carried out cleavage, obtain slick cleaved cavity surface;
(2) cleavage is good chip of laser is installed on the described wafer-supporting platform of claim 1;
(3) wafer-supporting platform is installed on the evaporation platform according to 60 °～80 ° angles;
(4) the evaporation platform is installed in the evaporated device, carries out the laser cavity surface plated film;
(5) take out chip of laser, carry out package test.
The present invention adopts the anchor clamps fixed laser with certain angle of inclination (60 °～80 °), utilizes these anchor clamps can effectively improve the reliability of cavity surface film coating.Anchor clamps designed among the present invention are made of three wafer-supporting platforms that are fixed on the evaporation platform with certain angle of inclination (60 °～80 °), and the laser apparatus that at first cleavage is gone out the chamber face during use places on the wafer-supporting platform, and the chamber face is pressed close to the wafer-supporting platform edge; Utilize the spring piece fixed laser then, because spring piece has certain width, so the upper surface of laser apparatus is protected by spring piece; At last wafer-supporting platform is installed on the evaporation platform, mounted evaporation platform is put into the evaporation cavity carry out evaporation.In evaporate process; because the laser apparatus upper surface is covered by spring piece; lower surface is close to wafer-supporting platform; and laser cavity surface is towards evaporation source with certain angle; therefore the upper and lower surface of laser apparatus all is protected and can not be introduced the possibility that short circuit metal or metal electrode are insulated the film covering when effectively having avoided evaporation by evaporated film.
Beneficial effect
Introduce short circuit metal or metal electrode when the present invention has effectively avoided evaporation and be insulated the possibility that film covers, the anchor clamps that provide can disposable evaporation dozens of laser apparatus, is suitable for the batch process of laser cavity surface plated film.Clamp structure provided by the invention in addition is simple, is easy to processing, and tooling cost is low, long service life, and also this fixture operation is simple, promotes the use of easily.
Description of drawings
Fig. 1 fundamental diagram of the present invention.
Fig. 2 wafer-supporting platform front view of the present invention (a) and side-view (b).
The front view (a) of Fig. 3 wafer-supporting platform of the present invention and evaporation platform assembling parts and side-view (b).
Fig. 4 the present invention carries out the synoptic diagram of plating films on cavity surfaces of semiconductor lasers.
Fig. 5 the present invention adopts cavity surface film coating and does not adopt the L-I rational curve of the DFB-QCL device of cavity surface film coating technology.
Embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment only to be used to the present invention is described and be not used in and limit the scope of the invention.Should be understood that in addition those skilled in the art can make various changes or modifications the present invention after the content of having read the present invention's instruction, these equivalent form of values fall within the application's appended claims institute restricted portion equally.
As shown in Figure 3, anchor clamps designed among the present invention are made of three wafer-supporting platforms that are fixed on the evaporation platform with certain angle of inclination (60 °～80 °), and the laser apparatus that at first cleavage is gone out the chamber face during use places on the wafer-supporting platform, and the chamber face is pressed close to the wafer-supporting platform edge; Utilize the spring piece fixed laser then, because spring piece has certain width, so the upper surface of laser apparatus is protected by spring piece; At last wafer-supporting platform is installed on the evaporation platform, mounted evaporation platform is put into the evaporation cavity carry out evaporation.In evaporate process; because the laser apparatus upper surface is covered by spring piece; lower surface is close to wafer-supporting platform; and laser cavity surface is towards evaporation source with certain angle; therefore the upper and lower surface of laser apparatus all is protected and can not be introduced the possibility that short circuit metal or metal electrode are insulated the film covering when effectively having avoided evaporation by evaporated film.
The present invention includes: (1) is used for the device of cavity surface film coating; (2) utilize electron beam evaporation to prepare the method for films on cavity surfaces of semiconductor lasers film.
1, the unit clamp that is used for cavity surface film coating
The unit clamp that is used for cavity surface film coating that designs voluntarily among the present invention mainly contains two portions to be formed, and is used for fixing the wafer-supporting platform of chip of laser and is used for installing the evaporation platform that wafer-supporting platform also can be fixed on electron beam evaporation equipment.
Wafer-supporting platform is the core integral part of anchor clamps, and its major function is the fixed laser chip, effectively protects the upper/lower electrode surface of laser apparatus, guarantees that laser cavity surface is exposed in the evaporation region fully to guarantee the quality of evaporated film.Wafer-supporting platform is a stainless steel, and width is 80mm, and length is 500mm.Polished finish has been carried out on the wafer-supporting platform surface, can fit tightly with wafer-supporting platform to guarantee chip back, effectively protects the chip lower surface electrode can evaporation.Wafer-supporting platform structure front view is seen accompanying drawing 2 (a), and wherein parts 1 are meant wafer-supporting platform, the 2nd, and spring piece, the 3rd, chip of laser.The spring piece that is used for fixing chip of laser has all been installed in the wafer-supporting platform both sides as we can see from the figure.Spring piece has certain width, entire chip can be covered under the spring piece when the fixed laser chip, and the thin-film material evaporation is to the upper surface of laser apparatus when having avoided cavity surface film coating.Because the compressing tablet dynamics of spring piece can be regulated by retaining screw, therefore can not cause damage simultaneously to the laser apparatus upper surface.The chamber face and the wafer-supporting platform justified margin that will need plated film when laser apparatus is installed are to avoid the influence of wafer-supporting platform to cavity surface film coating.Fig. 2 (b) is the side-view of wafer-supporting platform, the wafer-supporting platform side is not a rectangle as we can see from the figure, the side and the ground of wafer-supporting platform form an angle (60 °～80 °), and when therefore wafer-supporting platform being fixed on the evaporation platform, the chamber face and the generating surface of laser apparatus form certain pitch angle.
The wafer-supporting platform that chip of laser is installed need utilize custom-designed evaporation platform could be fixed on easily in the thin film evaporation instrument, and an evaporation platform can be installed three wafer-supporting platforms.The evaporation platform is circular stainless steel platform, and diameter is 750mm, and wafer-supporting platform is installed in the middle of the platform, and the pedestal that is higher than wafer-supporting platform is equipped with in both sides.Circular evaporation platform periphery has cutting, is convenient to be installed in the film preparation instruments such as electron beam evaporation, thermal evaporation.Fig. 3 (a) and (b) be the component diagram that wafer-supporting platform and evaporation platform are fitted together, wherein Fig. 3 (a) is a front view, Fig. 3 (b) is a side-view.As shown in the figure, the parts 4 among the figure are evaporation circular platforms, and parts 5 are fixing parts that wafer-supporting platform is installed, and parts 6 are bases of evaporation platform, and parts 1 are the wafer-supporting platforms that is fixed on the evaporation platform.
2, utilize electron beam evaporation to prepare the effective ways of films on cavity surfaces of semiconductor lasers film
In order to address this problem, the present invention has designed a kind of effective ways that prepare the films on cavity surfaces of semiconductor lasers film, and this method mainly is effectively to have protected the upper and lower surface of laser apparatus by two kinds of measures.
The effective ways specific implementation process of the preparation films on cavity surfaces of semiconductor lasers film that the present invention relates to is as follows: the chip of laser that at first will dissociate the chamber face is installed on the special-purpose anchor clamps, utilizes the upper/lower electrode surface of special wafer-supporting platform structural defence laser apparatus; Utilize the special angle of wafer-supporting platform and evaporation platform to make chip of laser chamber face and generating surface that certain included angle be arranged, further protect the upper/lower electrode surface.The anchor clamps that will install chip are at last put into evaporation equipment and are carried out evaporation.In evaporative process, laser cavity surface and generating surface have a very little angle, and the laser apparatus upper/lower electrode that can adequately protect can be by the evaporation upper film; Because the chamber face that angle causes is very little to the difference of altitude of evaporation source, can ignore basically on the other hand,, guarantee the quality of evaporated film so can not cause the inhomogeneous of face place, chamber evaporated film.Fig. 4 utilizes the present invention to carry out the synoptic diagram of plating films on cavity surfaces of semiconductor lasers, and wherein 1 is special-purpose wafer-supporting platform, and the 4th, special-purpose evaporation platform, the 3rd, chip of laser, 7 are meant the material molecule of evaporated film.As we can see from the figure, utilize method involved in the present invention and unit clamp, effectively protected the upper and lower surface electrode of laser apparatus when can obtain the high quality cavity surface film coating, greatly improved the reliability of cavity surface film coating technology.
Utilize the present invention to prepare the rear facet high-reflecting film of 7.6 μ m QCLs, concrete implementation step comprises several aspects: (1) utilizes scribing machine that chip of laser is carried out cleavage, obtains slick cleaved cavity surface; (2) cleavage is good chip of laser is installed on the special-purpose wafer-supporting platform; (3) wafer-supporting platform is installed on the evaporation platform according to certain angle; (4) the evaporation platform is installed in the evaporated device, carries out the laser cavity surface plated film; (5) take out chip of laser, carry out package test.
1) 7.6 μ m QCLs are carried out cleavage, obtain the chipset of 6 groups of long 3mm in chamber, every group comprises 4 chip of laser.Note selecting the crystal orientation during cleavage chip, to obtain high-quality cleavage surface.For fear of the pollution of chamber face, need be installed to rapidly on the anchor clamps after the cleavage, put into the vacuum environment of evaporated device.
2) 6 groups of chipsets are installed on 3 wafer-supporting platforms, notice during installation that laser cavity surface will be close to the wafer-supporting platform edge, spring piece will cover the chip of laser upper surface fully.
3) wafer-supporting platform is installed on the evaporation platform according to the angle that designs, will notes observing chip of laser during installation, guarantee that the position of chip does not change.
4) the evaporation platform is put into evaporated device evaporation chamber face film,, usually the evaporation platform is applied the rotation of certain speed for guaranteeing the homogeneity of evaporation.
5) after evaporation finishes, take out the evaporation platform, take off the chip of laser group, utilize scribing machine that chipset is cleaved into single laser apparatus again, carry out package test from wafer-supporting platform.
Fig. 5 is the L-I rational curve comparison diagram of QCL under differing temps that adopts cavity surface film coating and do not adopt cavity surface film coating, the geometrical dimension of two tube cores is identical, the long L=3mm in chamber, the wide W=18 μ of ridge m, test condition is the pulsed drive pattern, pulsewidth 200ns, dutycycle 1% adopts HgCdTe high-speed response detector to carry out measuring light power.As can be seen from the figure, under room temperature (300K), the threshold current density that has adopted the device of cavity surface film coating technology is 1.64KA/cm
2, the maximum bright dipping peak power of front facet is 61.8mW, is 2.04KA/cm and do not adopt the threshold current density of the device of cavity surface film coating technology
2, the maximum bright dipping peak power of front facet only is 43.5mW.Compare with the device that does not adopt cavity surface film coating, adopt the laser apparatus L-I characteristic of cavity surface film coating art breading to have greatly improved: under identical probe temperature, it is about 20% that threshold current density has reduced, and the maximum of front facet goes out luminous power and improved approximately 50%, and slope efficiency has improved about 44%.By test also explanation, utilize designed method of the present invention and unit clamp, can obtain high-quality cavity surface film coating technology.
Claims (3)
1. device that is used for plating films on cavity surfaces of semiconductor lasers, comprise the wafer-supporting platform that is used for fixing chip of laser and be used for installing the evaporation platform that wafer-supporting platform also can be fixed on electron beam evaporation equipment, it is characterized in that: the spring piece (2) that is used for fixing chip of laser is installed in described wafer-supporting platform (1) both sides, the width of spring piece (2) is as the criterion so that entire chip is covered under the spring piece, the retaining screw of regulating the compressing tablet dynamics is arranged on the spring piece (2), a side of wafer-supporting platform (1) becomes 60 °～80 ° angles with horizontal plane, polished finish has been carried out on the surface of wafer-supporting platform (1); Described evaporation platform (4) is circular stainless steel platform, and wafer-supporting platform (1) is installed in the middle of the evaporation platform (4), and the pedestal (6) that is higher than wafer-supporting platform is equipped with in both sides, and circular evaporation platform periphery has cutting.
2. a kind of device that is used for plating films on cavity surfaces of semiconductor lasers according to claim 1 is characterized in that: described wafer-supporting platform (1) is a stainless steel, and width is 80mm, and length is 500mm; Described evaporation platform (4) is circular stainless steel platform, and diameter is 750mm.
3. one kind is used the described method that is used for the device of plating films on cavity surfaces of semiconductor lasers of claim 1, it is characterized in that:
Comprise the following steps:
(1) utilizes scribing machine that chip of laser is carried out cleavage, obtain slick cleaved cavity surface;
(2) cleavage is good chip of laser is installed on the described wafer-supporting platform of claim 1;
(3) wafer-supporting platform is installed on the evaporation platform according to 60 °～80 ° angles;
(4) the evaporation platform is installed in the evaporated device, carries out the laser cavity surface plated film;
(5) take out chip of laser, carry out package test.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009102006482A CN101748367B (en) | 2009-12-24 | 2009-12-24 | Device and method used for plating films on cavity surfaces of semiconductor lasers |
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| CN2009102006482A CN101748367B (en) | 2009-12-24 | 2009-12-24 | Device and method used for plating films on cavity surfaces of semiconductor lasers |
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| CN101748367A true CN101748367A (en) | 2010-06-23 |
| CN101748367B CN101748367B (en) | 2011-11-09 |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103014647A (en) * | 2011-09-22 | 2013-04-03 | 吉富新能源科技(上海)有限公司 | Photovoltaic glass sputtering ineffective edge shielding device |
| CN109444165A (en) * | 2018-10-29 | 2019-03-08 | 中国电子科技集团公司第十三研究所 | Chip strip microscopic examination fixture |
| CN109881181A (en) * | 2019-01-31 | 2019-06-14 | 长江存储科技有限责任公司 | Semiconductor processing equipment |
| CN110315141A (en) * | 2018-03-28 | 2019-10-11 | 中国石油化工股份有限公司 | Component is deposited in carbon-point cutting apparatus and plated film instrument with the carbon-point cutting apparatus |
| CN112332217A (en) * | 2020-11-04 | 2021-02-05 | 苏州长光华芯光电技术有限公司 | Semiconductor laser chip and manufacturing method |
| CN112481587A (en) * | 2020-12-04 | 2021-03-12 | 全磊光电股份有限公司 | Method and device for improving metal coverage of DFB laser |
| CN113416931A (en) * | 2021-08-18 | 2021-09-21 | 华芯半导体研究院(北京)有限公司 | VCSEL chip evaporation fixture, VCSEL chip evaporation system and method |
| CN114045460A (en) * | 2021-10-27 | 2022-02-15 | 海南师范大学 | Medium-far infrared semiconductor laser cavity surface metal film coating clamp |
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2009
- 2009-12-24 CN CN2009102006482A patent/CN101748367B/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103014647A (en) * | 2011-09-22 | 2013-04-03 | 吉富新能源科技(上海)有限公司 | Photovoltaic glass sputtering ineffective edge shielding device |
| CN110315141A (en) * | 2018-03-28 | 2019-10-11 | 中国石油化工股份有限公司 | Component is deposited in carbon-point cutting apparatus and plated film instrument with the carbon-point cutting apparatus |
| CN110315141B (en) * | 2018-03-28 | 2020-10-23 | 中国石油化工股份有限公司 | Carbon rod cutting device and coating film instrument evaporation assembly with same |
| CN109444165A (en) * | 2018-10-29 | 2019-03-08 | 中国电子科技集团公司第十三研究所 | Chip strip microscopic examination fixture |
| CN109444165B (en) * | 2018-10-29 | 2021-06-15 | 中国电子科技集团公司第十三研究所 | Chip strip microscope inspection clamp |
| CN109881181A (en) * | 2019-01-31 | 2019-06-14 | 长江存储科技有限责任公司 | Semiconductor processing equipment |
| CN112332217A (en) * | 2020-11-04 | 2021-02-05 | 苏州长光华芯光电技术有限公司 | Semiconductor laser chip and manufacturing method |
| CN112332217B (en) * | 2020-11-04 | 2022-06-03 | 苏州长光华芯光电技术股份有限公司 | Semiconductor laser chip and manufacturing method |
| CN112481587A (en) * | 2020-12-04 | 2021-03-12 | 全磊光电股份有限公司 | Method and device for improving metal coverage of DFB laser |
| CN113416931A (en) * | 2021-08-18 | 2021-09-21 | 华芯半导体研究院(北京)有限公司 | VCSEL chip evaporation fixture, VCSEL chip evaporation system and method |
| CN114045460A (en) * | 2021-10-27 | 2022-02-15 | 海南师范大学 | Medium-far infrared semiconductor laser cavity surface metal film coating clamp |
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