CN112332217A - Semiconductor laser chip and manufacturing method - Google Patents

Semiconductor laser chip and manufacturing method Download PDF

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Publication number
CN112332217A
CN112332217A CN202011219328.4A CN202011219328A CN112332217A CN 112332217 A CN112332217 A CN 112332217A CN 202011219328 A CN202011219328 A CN 202011219328A CN 112332217 A CN112332217 A CN 112332217A
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China
Prior art keywords
layer
semiconductor
protection
side wall
semiconductor structure
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CN202011219328.4A
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CN112332217B (en
Inventor
周立
王俊
谭少阳
李波
胡燚文
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Suzhou Everbright Photonics Technology Co Ltd
Suzhou Everbright Semiconductor Laser Innovation Research Institute Co Ltd
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Suzhou Everbright Photonics Technology Co Ltd
Suzhou Everbright Semiconductor Laser Innovation Research Institute Co Ltd
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Publication of CN112332217A publication Critical patent/CN112332217A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3205—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures with an active layer having a graded composition in the growth direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention provides a semiconductor laser chip and a manufacturing method thereof, wherein the semiconductor laser chip comprises: a substrate; the semiconductor structure layer is positioned on the surface of the substrate, and a transition slope surface is arranged between the surface of the semiconductor structure layer, which is back to the substrate, and the side wall of the semiconductor structure layer; the protection structure covers the transition slope surface and the side wall of the semiconductor structure layer; and the solder layer is positioned on one side of the semiconductor structure layer, which faces away from the substrate. The protective structure covers the slope surface of the transition and the side wall of the semiconductor structure layer, short circuit caused by the fact that the solder is communicated with the semiconductor structure layer can be prevented, and meanwhile, the problem of breakage and fracture of the right-angle edge position can be prevented through the design of the slope surface of the transition.

Description

Semiconductor laser chip and manufacturing method
Technical Field
The invention relates to the field of semiconductor device manufacturing, in particular to a semiconductor laser chip and a manufacturing method thereof.
Background
Semiconductor lasers are devices that generate laser light by using a certain semiconductor material as a working substance. The core light emitting portion of the semiconductor laser is a PN junction die composed of P-type and N-type semiconductors.
In the prior art, a semiconductor laser chip is packaged on a heat sink through solder, an optical film is arranged on the cavity surface of the chip for insulation protection, and the side edge of the chip is generally exposed. During packaging and welding, solder is directly extruded by packaging pressure and is stacked on the side of a chip, an epitaxial active layer of the chip is thin and comprises a P layer and an N layer, the solder is possibly directly communicated with a PN junction during stacking to form a short-circuit channel, and a large amount of current flows through the short-circuit channel during the operation of the chip, so that the position is easily heated and burnt, and the laser fails; in addition, some solders such as indium and the like have the characteristics of easy flowing and easy electromigration, when the chip works at high current or works in continuous pulse mode, the solders can migrate from the welding surface to the cavity surface of the chip and the side edge of the chip due to the electrical migration characteristic, and when the solders migrate to the PN junction of the epitaxial active layer, the solders can also directly communicate with the PN junction to form a short-circuit channel, so that the laser fails.
Therefore, the semiconductor laser chip in the prior art has the defect that the laser fails due to the fact that the solder is connected with the PN junction.
Disclosure of Invention
Therefore, the technical problem to be solved by the present invention is to overcome the defect that the semiconductor laser chip in the prior art fails due to the fact that the solder is communicated with the PN junction, and thus, a semiconductor laser chip and a manufacturing method thereof are provided.
The invention provides a method for manufacturing a semiconductor laser chip, which comprises the following steps: providing a substrate; forming a semiconductor structure layer on the surface of the substrate; forming a transition slope surface between the surface of the semiconductor structure layer, which faces away from the substrate, and the side wall of the semiconductor structure layer; forming a protection structure on the transition slope surface and the side wall of the semiconductor structure layer; and after the protective structure is formed, forming a solder layer on the surface of the semiconductor structure layer, which faces away from the substrate.
Optionally, the method for forming the transition slope surface includes an etching process.
Optionally, the process of forming the protection structure includes a side-tipping film coating process.
Optionally, the semiconductor structure layer has a first sidewall and a second sidewall opposite to each other, and a front cavity sidewall and a back cavity sidewall opposite to each other, the arrangement direction from the first sidewall to the second sidewall is perpendicular to the arrangement direction from the front cavity sidewall to the back cavity sidewall, and laser generated by the semiconductor laser is emitted from the back cavity sidewall toward the front cavity sidewall; the protection structure on the transition slope surface adjacent to the first side wall and the protection structure on the first side wall are first protection structures, and the protection structure on the transition slope surface adjacent to the second side wall and the protection structure on the second side wall are second protection structures; the side-tipping film coating process comprises a first side-tipping film coating process and a second side-tipping film coating process; in the first side-tilt coating process, the side wall of the front cavity faces an evaporation source adopted by the first side-tilt coating process, a first tilt included angle is formed between the side wall of the front cavity and a horizontal plane, and the first protection structure is formed in the process of forming an optical film of the front cavity on the side wall of the front cavity by adopting the first side-tilt coating process; in the second side-tilt coating process, the side wall of the rear cavity faces an evaporation source adopted by the second side-tilt coating process, a second tilt included angle is formed between the side wall of the rear cavity and the horizontal plane, and the second protection structure is formed in the process that the optical film of the rear cavity is formed on the side wall of the rear cavity by the second side-tilt coating process.
Optionally, the thickness of the rear cavity optical film is greater than that of the front cavity optical film; the thickness of the second protection structure is greater than the thickness of the first protection structure.
Correspondingly, the invention also provides a semiconductor laser chip, comprising: a substrate; the semiconductor structure layer is positioned on the surface of the substrate, and a transition slope surface is arranged between the surface of the semiconductor structure layer, which is back to the substrate, and the side wall of the semiconductor structure layer; the protection structure covers the transition slope surface and the side wall of the semiconductor structure layer; and the solder layer is positioned on one side of the semiconductor structure layer, which faces away from the substrate.
Optionally, the transition slope surface is a plane or a concave surface.
Optionally, an included angle between the transition slope surface and a surface of the semiconductor structure layer facing away from the substrate is 30 ° to 60 °.
Optionally, the semiconductor structure layer has a groove penetrating through the semiconductor structure layer, and the semiconductor structure layer between adjacent grooves is a light emitting region; the insulating layer covers the inner wall of the groove, part of the surface of the light emitting area, the surface of the edge area of the semiconductor structure layer, which faces away from the substrate, and the transition slope; the insulating layer covering the transition slope surface is positioned between the protection structure and the semiconductor structure layer; the solder layer is positioned on one side of the insulating layer, which faces away from the substrate.
Optionally, the material of the insulating layer comprises SiO2(ii) a The thickness of the insulating layer is 100 nm-300 nm.
Optionally, the method further includes: the gold plating layer comprises a side gold plating layer and a luminous zone gold plating layer; the side gold-plating layer is positioned on the edge area of the semiconductor structure layer, and the insulating layer positioned on the surface of the edge area of the semiconductor structure layer isolates the side gold-plating layer from the edge area of the semiconductor structure layer; the light emitting area gold plating layer is positioned on the surface of the light emitting area, which is back to the substrate, and in the groove, and covers part of the insulating layer; the thickness of the side gold-plating layer is larger than that of the light-emitting area gold-plating layer.
Optionally, the difference between the thickness of the side gold-plating layer and the thickness of the light-emitting region gold-plating layer is 1 μm to 3 μm.
Optionally, the semiconductor structure layer has a first sidewall and a second sidewall opposite to each other, and a front cavity sidewall and a back cavity sidewall opposite to each other, an arrangement direction from the first sidewall to the second sidewall is perpendicular to an arrangement direction from the front cavity sidewall to the back cavity sidewall, and laser light generated by the semiconductor laser is emitted from the back cavity sidewall toward the front cavity sidewall; the protection structure on the transition slope surface adjacent to the first side wall and the protection structure on the first side wall are first protection structures, and the protection structure on the transition slope surface adjacent to the second side wall and the protection structure on the second side wall are second protection structures; the thickness of the second protection structure is greater than the thickness of the first protection structure.
Optionally, the first protection structure and the second protection structure both include protection unit layers, and the number of the protection unit layers in the second protection structure is greater than the number of the protection unit layers in the first protection structure; the protection unit layer comprises a first insulation protection layer, a second insulation protection layer and a third insulation protection layer which are sequentially arranged from inside to outside of the semiconductor structure layer; the first insulating protective layer is made of Al2O3The second protective layer is made of silicon; the third insulating protective layer is made of SiO2。
Correspondingly, the invention also provides a laser, comprising: the semiconductor laser chip of the invention; and the heat sink is positioned on one side of the solder layer, which faces away from the substrate, and the heat sink and the solder layer are welded together.
The technical scheme of the invention has the following advantages:
1. according to the semiconductor laser chip provided by the technical scheme, the transition slope is arranged between the surface, back to the substrate, of the semiconductor structure layer and the side wall of the semiconductor structure layer, the protection structure covers the transition slope and the side wall of the semiconductor structure layer, and due to the existence of the transition slope, the connection between the protection structure on the transition slope and the protection structure on the side wall of the semiconductor structure layer is good, the vertex angle of the side wall of the semiconductor structure layer can be prevented from being exposed by the protection structure, and the protection structure can completely cover the transition slope of the side wall of the semiconductor structure layer. Due to the existence of the protection structure, the problem that the solder is communicated with the semiconductor structure layer and is short-circuited due to the encapsulation pressure or the electrical migration characteristic of the solder can be avoided.
2. Furthermore, the transition slope surface is a plane or a concave surface, so that the manufacturing process is simplified, and meanwhile, the adhesion of the protection structure on the transition slope surface is improved, and the purpose of protecting the semiconductor structure layer is achieved.
3. Furthermore, the included angle between the transition slope surface and the surface of the semiconductor structure layer back to the substrate is 30-60 degrees, so that poor adhesion of the protection structure on the transition slope surface can be prevented, and the coverage success rate of the protection structure is improved.
4. Furthermore, the insulating layer covers the inner wall of the groove, the surface of a partial luminous zone, the surface of the edge area of the semiconductor structure layer, which is back to the substrate, and the transition slope, so that the problem of short circuit failure of the semiconductor laser chip can be prevented; the insulating layer that covers the domatic transition is located between protection architecture and the semiconductor structure layer, the insulating layer with protection architecture plays dual protection's effect to the domatic transition, greatly reduced the domatic naked probability of transition.
5. Further, the insulating layer is made of SiO2The material has the properties of chemical stability, high insulativity, high adhesive force and low stress, and can be used as a passivation layer to protect a semiconductor structure layer and prevent the problems of short circuit and the like of a semiconductor laser chip.
6. Furthermore, the semiconductor laser chip is provided with a gold plating layer, so that the semiconductor laser chip is prevented from being damaged by hard solder, impurities and the like during welding and packaging; the thickness of side gold-plating layer is greater than the thickness of luminous zone gold-plating layer, has heightened the semiconductor laser chip when the welding encapsulation on the one hand, has increased the distance of semiconductor laser chip and heat sink, and on the other hand makes semiconductor laser chip middle zone hold more solders, and the solder that all can make semiconductor laser chip lateral wall in two respects piles up highly to reduce, reduces to lead to the semiconductor laser chip to produce the risk of losing efficacy because of the solder piles up and communicates the semiconductor structure layer.
7. According to the manufacturing method of the semiconductor laser chip, a transition slope is formed between the surface of the semiconductor structure layer, which is back to the substrate, and the side wall of the semiconductor structure layer; forming a protection structure on the transition slope surface and the side wall of the semiconductor structure layer; and after the protective structure is formed, forming a solder layer on the surface of the semiconductor structure layer, which faces away from the substrate. Because the slope surface of the transition exists, the connection between the protection structure on the slope surface of the transition and the protection structure on the side wall of the semiconductor structure layer is better, the vertex angle of the side wall of the semiconductor structure layer can be prevented from being exposed by the protection structure, and the slope surface of the transition of the side wall of the semiconductor structure layer can be completely covered by the protection structure. Due to the existence of the protection structure, the problem that the solder is communicated with the semiconductor structure layer and is short-circuited due to the encapsulation pressure or the electrical migration characteristic of the solder can be avoided.
8. Further, the process for forming the protection structure comprises an inclined coating process, wherein a first protection structure is formed in the process of forming the front cavity optical film on the side wall of the front cavity by adopting the first side-inclined coating process; and in the process of forming the rear cavity optical film on the side wall of the rear cavity by adopting the second side-tilt film coating process, a second protection structure is formed, so that the manufacturing process is saved, and the production efficiency is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1-6 are schematic intermediate structures for forming the semiconductor laser chip of fig. 7.
Fig. 7 is a schematic structural diagram of a semiconductor laser chip according to an embodiment of the invention;
fig. 8 is a schematic structural diagram of a semiconductor laser chip soldered on a heat sink according to an embodiment of the present invention;
fig. 9 is a flowchart of a method for manufacturing a semiconductor laser chip according to another embodiment of the present invention.
Description of reference numerals:
1. a substrate; 2. a semiconductor structure layer; 21. a first semiconductor layer; 22. a second semiconductor layer; 3. a transition slope surface; 4. a protective structure; 41. a first protective structure; 42. a second protective structure; 5. a solder layer; 6. a groove; 7. an insulating layer; 8. plating a gold layer; 81. plating gold layers on the side edges; 82. plating a gold layer on the luminous region; 9. a heat sink; 10. a trench; 11. a front cavity sidewall; 12. a rear cavity side wall; 13a, a first inclined included angle; 13b, a second inclined included angle.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Example 1
The present embodiment provides a semiconductor laser chip, referring to fig. 7, including: a substrate 1; the semiconductor structure layer 2 is positioned on the surface of the substrate 1, and a transition slope surface 3 is arranged between the surface of the semiconductor structure layer 2, which is back to the substrate 1, and the side wall of the semiconductor structure layer; a protective structure 4 covering the transition slope and the side wall of the semiconductor structure layer; and the solder layer 5 is positioned on the side of the semiconductor structure layer, which faces away from the substrate 1.
Referring to fig. 7, the substrate 1 is made of GaAs; the semiconductor structure layer 2 includes a first semiconductor layer 21 and a second semiconductor layer 22, the second semiconductor layer 22 is located on the upper surface of the substrate 1, and the first semiconductor layer 21 is located on the upper surface of the second semiconductor layer 22, that is, the second semiconductor layer 22 is located between the first semiconductor layer 21 and the substrate 1.
In this embodiment, the first semiconductor layer 21 is a P-type semiconductor layer and the second semiconductor layer 22 is an N-type semiconductor layer, and in other embodiments, the first semiconductor layer 21 is an N-type semiconductor layer and the second semiconductor layer 22 is a P-type semiconductor layer.
In this embodiment, a transition slope 3 is formed between the upper surface of the first semiconductor layer 21 and the sidewall of the first semiconductor layer 21, and in other embodiments, the transition slope 3 may also extend to the second semiconductor layer 22.
In this embodiment, the transition slope 3 is a plane, and an included angle between the transition slope 3 and the upper surface of the first semiconductor layer 21 is 30 ° to 60 °, such as 30 °, 40 °, 45 °, 50 °, and 60 °.
In other embodiments, the transition ramp 3 may also be slightly concave.
Because the transition slope surface 3 is a plane or a concave surface, the manufacturing process is simplified, and meanwhile, the adhesion of the protection structure 4 on the transition slope surface 3 is improved, so that the purpose of protecting the semiconductor structure layer 2 is achieved.
The included angle between the transition slope surface 3 and the surface of the semiconductor structure layer 2 back to the substrate 1 is 30-60 degrees, so that poor adhesion of the protection structure 4 on the transition slope surface 3 can be prevented, and the coverage success rate of the protection structure 4 is improved.
In this embodiment, the protection structure 4 includes a protection unit layer, and the protection unit layer includes a first insulation protection layer, a second insulation protection layer, and a third insulation protection layer sequentially arranged from inside to outside of the semiconductor structure layer. The first insulating protective layer is made of Al2O3The second protective layer is made of silicon; the third insulating protective layer is made of SiO2。
The substrate 1 has a thermal expansion coefficient of 6.4X 10-6K, the thermal expansion coefficient of the third insulating protective layer is 0.4 multiplied by 10-6K～0.6×10-6K, the thermal expansion coefficient of the second protective layer is 2.6 multiplied by 10-6K～3.0×10-6K, the stress buffer layer between substrate 1 and the third insulating protective layer is regarded as to the second protective layer, can play the transition effect effectively between protective structure 4 and semiconductor structure layer 2, and the effectual stress stability who improves the third insulating protective layer reduces the influence of temperature variation to protective structure 4 connection stability.
In a specific embodiment, the material used for the first insulating protection layer is Al2O3The second protective layer is made of Si and has a thermal expansion coefficient of 2.8 × 10-6K, the third insulating protective layer is made of SiO2Coefficient of thermal expansion of 0.5X 10-6K; the first insulating protective layer has a thickness of 2nm to 10nm, for example, 2nm, 5nm, 8nm, 10nm, etc., the second protective layer has a thickness of 2nm to 20nm, for example, 2nm, 5nm, 10nm, 20nm, etc., and the third insulating protective layer has a thickness of 2nm to 20nm, for example, 2nm, 10nm, 15nm, 20nm, etc.; the first insulating protective layer is made of Al2O3Has the characteristic of high adhesive force, and increases the bonding force of the protective structure 4 and the semiconductor structure layer 2.
In other embodiments, the protection structure 4 may also be two protection layers, and other materials may be selected to meet the requirements of laser light transmittance, reflectivity, and stress, which is not limited in this embodiment.
In this embodiment, the semiconductor structure layer 2 has a first sidewall and a second sidewall opposite to each other, and a front cavity sidewall 11 and a back cavity sidewall 12 opposite to each other, an arrangement direction from the first sidewall to the second sidewall is perpendicular to an arrangement direction from the front cavity sidewall 11 to the back cavity sidewall 12, and laser light generated by the semiconductor laser is emitted from the back cavity sidewall toward the front cavity sidewall; the protection structure on the transition slope surface adjacent to the first side wall and the protection structure on the first side wall are first protection structures 41, and the protection structure on the transition slope surface adjacent to the second side wall and the protection structure on the second side wall are second protection structures 42; the thickness of the second protective structure 42 is greater than the thickness of the first protective structure 41.
The first protection structure 41 and the second protection structure 42 both include protection unit layers, and the number of the protection unit layers in the second protection structure 42 is greater than the number of the protection unit layers in the first protection structure 41. When the first protective structure 41 and the second protective structure 42 include a plurality of protective unit layers, the plurality of protective unit layers in the first protective structure 41 are stacked, and the plurality of protective unit layers in the second protective structure 42 are stacked.
The semiconductor structure layer 2 is provided with grooves 6 penetrating through the semiconductor structure layer 2, and the semiconductor structure layer 2 between adjacent grooves 6 is a light emitting region; the insulating layer 7 covers the inner wall of the groove 6, the surface of a partial light-emitting area, the surface of the edge area of the semiconductor structure layer 2, which is back to the substrate 1, and the transition slope 3; the insulating layer 7 that covers the domatic 3 of transition is located between protective structure 4 and semiconductor structure layer 2, and insulating layer 7 and protective structure 4 play the dual protection's to the domatic 3 effect of transition, greatly reduced the domatic 3 probability of exposing of transition.
In this embodiment, the material of the insulating layer 7 is selected from SiO2The thickness is 100nm to 300nm, and may be, for example, 100nm, 180nm, 200nm, 260nm, 300nm, or SiO2The semiconductor structure layer has the properties of chemical stability, high insulating property, high adhesion and low stress, and can be used as a passivation layer to protect the semiconductor structure layer 2 and prevent the first semiconductor layer 21 and the second semiconductor layer 22 at the groove 6 from being communicated to cause short circuit and failure.
The semiconductor laser chip further comprises a gold-plating layer 8, wherein the gold-plating layer 8 comprises a side gold-plating layer 81 and a light-emitting area gold-plating layer 82; the side gold-plating layer 81 is positioned on the edge area of the semiconductor structure layer 2, and the insulating layer 7 positioned on the surface of the edge area of the semiconductor structure layer 2 isolates the side gold-plating layer 81 from the edge area of the semiconductor structure layer 2; the light emitting area gold plating layer 82 is positioned on the surface of the light emitting area, which faces away from the substrate 1, and in the groove 6, and covers part of the insulating layer 7; the gold plating layer 8 can prevent the semiconductor laser chip from being damaged by hard solder, impurities and the like during welding and packaging; the thickness of the side gold-plate layer 81 is larger than that of the light-emitting region gold-plate layer 82, and the difference in thickness is 1 μm to 3 μm, and may be, for example, 1 μm, 2 μm, 3 μm, or the like. The design of thickness difference on the one hand has stepped up the semiconductor laser chip when welding the encapsulation, has increased the distance of semiconductor laser chip and heat sink 9, and on the other hand makes semiconductor laser chip middle zone hold more solders, and both sides all can make the solder pile height of semiconductor laser chip lateral wall reduce, reduce to lead to semiconductor laser chip to produce the risk of inefficacy because of the solder piles up and communicates semiconductor structure layer 2.
Referring to fig. 8, one side of the semiconductor laser chip having the gold plating layer 8 faces the heat sink 9, and is soldered on the heat sink 9 through the solder layer 5 (fig. 8 omits a detailed structure of the semiconductor structure layer 2, and only illustrates a relative position relationship between the semiconductor laser chip and the heat sink), and the heat sink 9 can dissipate a large amount of heat generated by the semiconductor laser chip during operation, so as to prevent the device from being damaged due to an excessively high temperature, and simultaneously, it can be ensured that heat of each part of the semiconductor laser chip is uniformly distributed within a normal operating temperature range.
The semiconductor laser chip that this embodiment provided, it is domatic to have the transition between the surface of semiconductor structure layer back to the substrate and the lateral wall of semiconductor structure layer, and protection architecture covers the domatic and semiconductor structure layer's of transition lateral wall, because the domatic existence of transition, consequently the protection architecture on the domatic of transition is connected between the protection architecture of the lateral wall of semiconductor structure layer better, can avoid the apex angle department of the lateral wall of semiconductor structure layer to be exposed by protection architecture, and protection architecture can cover the domatic of transition of the lateral wall of semiconductor structure layer completely. Due to the existence of the protection structure, the problem that the solder is communicated with the semiconductor structure layer and is short-circuited due to the encapsulation pressure or the electrical migration characteristic of the solder can be avoided.
Example 2
The present embodiment provides a method for manufacturing a semiconductor laser chip, which is used to form the semiconductor laser chip provided in embodiment 1, with reference to fig. 9, and includes the following steps:
s1: providing a substrate, and forming a semiconductor structure layer on the surface of the substrate;
s2: forming a transition slope surface between the surface of the semiconductor structure layer, which is back to the substrate, and the side wall of the semiconductor structure layer;
s3: forming a protection structure on the transition slope surface and the side wall of the semiconductor structure layer;
s4: and after the protective structure is formed, forming a solder layer on the side of the semiconductor structure layer, which faces away from the substrate.
Referring to fig. 1, a substrate 1 is provided, and a semiconductor structure layer 2 is formed on an upper surface of the substrate 1, the semiconductor structure layer 2 includes a first semiconductor layer 21 and a second semiconductor layer 22, the second semiconductor layer 22 is located on the upper surface of the substrate 1, the first semiconductor layer 21 is located on the upper surface of the second semiconductor layer 22, in this embodiment, the second semiconductor layer 22 is located between the first semiconductor layer 21 and the substrate 1. In this embodiment, the first semiconductor layer 21 is a P-type semiconductor layer and the second semiconductor layer 22 is an N-type semiconductor layer, and in other embodiments, the first semiconductor layer 21 is an N-type semiconductor layer and the second semiconductor layer 22 is a P-type semiconductor layer.
With continued reference to fig. 1, grooves 6 are formed in the semiconductor structure layer 2 to penetrate the semiconductor structure layer 2, and the semiconductor structure layer 2 between adjacent grooves 6 is a light emitting region. The transition slope 3 is formed by an etching method, specifically, the trench 10 is formed at the cleavage position on the upper surface of the first semiconductor layer 21 by a wet etching method, the liquid medicine of the wet etching is a mixed liquid of sulfuric acid, hydrogen peroxide and water, and the included angle between the side wall of the trench 10 and the upper surface of the first semiconductor layer 21 is 30 ° to 60 °, for example, 30 °, 40 °, 50 °, 60 °, and the like. The side walls of the groove 10 form a transition ramp 3. In one particular embodiment, the cross-sectional shape of the groove 10 is V-shaped.
With continued reference to fig. 1, an insulating layer 7 is formed on the upper surface of the first semiconductor layer 21, and the insulating layer 7 covers the inner wall of the recess 6, the surface of a part of the light emitting region, the surface of the edge region of the semiconductor structure layer 2 facing away from the substrate 1, and the inner wall of the trench 10. The process for forming the insulating layer 7 is a deposition process, and the material of the insulating layer 7 is SiO2The thickness is 100nm to 300nm, and may be, for example, 100nm, 180nm, 200nm, 260nm or 300 nm.
Referring to fig. 2, the semiconductor laser chip is cleaved at a location along the bottom end of the trench 10.
Referring to fig. 3, a gold plating layer 8 is formed over the insulating layer 7, except for over the transition slope 3, and over the light-emitting region.
The gold-plate layer 8 includes a side gold-plate layer 81 and a light-emitting region gold-plate layer 82; the side gold-plating layer 81 is positioned on the edge area of the semiconductor structure layer 2, and the insulating layer 7 positioned on the surface of the edge area of the semiconductor structure layer 2 isolates the side gold-plating layer 81 from the edge area of the semiconductor structure layer 2; the light emitting area gold plating layer 82 is positioned on the surface of the light emitting area, which faces away from the substrate 1, and in the groove 6, and covers part of the insulating layer 7; the thickness of the side gold-plating layer 81 is greater than that of the light-emitting region gold-plating layer 82, and the difference in thickness is 1 μm to 3 μm, for example, 1 μm, 2 μm, 3 μm, or the like.
Referring to fig. 7, a protection structure 4 is formed on the transition slope 3 and the sidewall of the semiconductor structure layer 2.
In this embodiment, the protection structure 4 is formed by an inclined plating process.
For convenience of explaining the inclined film coating process, fig. 4 shows a schematic perspective view of a semiconductor laser chip, where a side surface of the semiconductor laser chip has a first sidewall and a second sidewall opposite to each other, and a front cavity sidewall 11 and a back cavity sidewall 12 opposite to each other, and an arrangement direction from the first sidewall to the second sidewall is perpendicular to an arrangement direction from the front cavity sidewall 11 to the back cavity sidewall 12. And laser generated by the semiconductor laser is emitted from the side wall of the rear cavity to the side wall of the front cavity.
The protection structure on the transition slope 3 adjacent to the first side wall and the protection structure on the first side wall are first protection structures 41, and the protection structure on the transition slope 3 adjacent to the second side wall and the protection structure on the second side wall are second protection structures 42
The side-tipping film coating process comprises a first side-tipping film coating process and a second side-tipping film coating process.
Referring to fig. 5, in the first side-tilt coating process, the front cavity sidewall 11 faces an evaporation source used in the first side-tilt coating process, a first tilt included angle 13a is formed between the front cavity sidewall 11 and a horizontal plane, and the first protection structure 41 is formed in a process of forming a front cavity optical film on the front cavity sidewall 11 by using the first side-tilt coating process.
Referring to fig. 6, in the second side-tilt coating process, the back cavity sidewall 12 faces an evaporation source used in the second side-tilt coating process, a second tilt included angle 13b is formed between the back cavity sidewall 12 and a horizontal plane, and the second protection structure 42 is formed in a process of forming a back cavity optical film on the back cavity sidewall 12 by using the second side-tilt coating process.
The thickness of the back cavity optical film is larger than that of the front cavity optical film; the thickness of the second protective structure 42 is greater than the thickness of the first protective structure 41.
It should be noted that the angles of the first inclined included angle 13a and the second inclined included angle 13b are between 5 ° and 10 °, for example, 5 °, 6 °, 8 °, 10 °, and the like, and according to the research of the inventors of the present invention, when the inclined angle is between 5 ° and 10 °, the difference of the reflectivity of the optical film on the cavity surface of the semiconductor laser chip is less than 0.5%, so that the performance requirement of the semiconductor laser is satisfied, and the deposited protection structure 4 can completely cover the side walls of the transition slope surface 3 and the semiconductor structure layer 2.
Fig. 7 is a schematic diagram of a semiconductor laser chip after forming a protection structure 4; the protective structure 4 is formed through the inclined film coating process, the protective structure 4 can be evaporated while the optical film of the cavity surface of the semiconductor laser chip is evaporated, the manufacturing process is saved, and the manufacturing efficiency is improved.
Example 3
Referring to fig. 8, after the protection structure 4 is formed, a solder layer 5 is formed on a side of the semiconductor structure layer 2 opposite to the substrate 1, and then a semiconductor laser chip is soldered and packaged on a heat sink 9 through the solder layer 5 to form a laser. The protection structure 4 can prevent the semiconductor structure layer 2 from being communicated and short-circuited by the solder layer 5, and the heat sink 9 can dissipate a large amount of heat generated by the semiconductor laser chip during working so as to prevent the semiconductor laser chip from being damaged due to overhigh temperature of a device, and meanwhile, the heat distribution of each part of the semiconductor laser chip can be ensured to be even and within a normal working temperature range.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.

Claims (15)

1. A method for manufacturing a semiconductor laser chip, comprising the steps of:
providing a substrate;
forming a semiconductor structure layer on the surface of the substrate;
forming a transition slope surface between the surface of the semiconductor structure layer, which faces away from the substrate, and the side wall of the semiconductor structure layer;
forming a protection structure on the transition slope surface and the side wall of the semiconductor structure layer;
and after the protective structure is formed, forming a solder layer on the surface of the semiconductor structure layer, which faces away from the substrate.
2. A method of fabricating a semiconductor laser chip as claimed in claim 1 wherein the method of forming the transition slope comprises an etching process.
3. A method of fabricating a semiconductor laser chip as claimed in claim 1 wherein the process of forming the protective structure includes a side-tipping coating process.
4. A method for fabricating a semiconductor laser chip as claimed in claim 3 wherein said semiconductor structure layer has opposite first and second sidewalls and opposite front and back cavity sidewalls, the arrangement direction from the first to the second sidewall being perpendicular to the arrangement direction from the front to the back cavity sidewall, the laser light generated by said semiconductor laser emerging from the back cavity sidewall in the direction of the front cavity sidewall; the protection structure on the transition slope surface adjacent to the first side wall and the protection structure on the first side wall are first protection structures, and the protection structure on the transition slope surface adjacent to the second side wall and the protection structure on the second side wall are second protection structures;
the side-tipping film coating process comprises a first side-tipping film coating process and a second side-tipping film coating process;
in the first side-tilt coating process, the side wall of the front cavity faces an evaporation source adopted by the first side-tilt coating process, a first tilt included angle is formed between the side wall of the front cavity and a horizontal plane, and the first protection structure is formed in the process of forming an optical film of the front cavity on the side wall of the front cavity by adopting the first side-tilt coating process;
in the second side-tilt coating process, the side wall of the rear cavity faces an evaporation source adopted by the second side-tilt coating process, a second tilt included angle is formed between the side wall of the rear cavity and the horizontal plane, and the second protection structure is formed in the process that the optical film of the rear cavity is formed on the side wall of the rear cavity by the second side-tilt coating process.
5. A method of fabricating a semiconductor laser chip as claimed in claim 4 wherein the thickness of the back cavity optical film is greater than the thickness of the front cavity optical film; the thickness of the second protection structure is greater than the thickness of the first protection structure.
6. A semiconductor laser chip, comprising:
a substrate;
the semiconductor structure layer is positioned on the surface of the substrate, and a transition slope surface is arranged between the surface of the semiconductor structure layer, which is back to the substrate, and the side wall of the semiconductor structure layer;
the protection structure covers the transition slope surface and the side wall of the semiconductor structure layer;
and the solder layer is positioned on one side of the semiconductor structure layer, which faces away from the substrate.
7. A semiconductor laser chip as claimed in claim 6 wherein the transition slope is planar or concave.
8. A semiconductor laser chip as claimed in claim 6 wherein the angle between the transition slope and the surface of the semiconductor structure layer facing away from the substrate is in the range 30 ° to 60 °.
9. The semiconductor laser chip as claimed in claim 6, wherein the semiconductor structure layer has grooves penetrating the semiconductor structure layer, and the semiconductor structure layer between adjacent grooves is a light emitting region;
the insulating layer covers the inner wall of the groove, part of the surface of the light emitting area, the surface of the edge area of the semiconductor structure layer, which faces away from the substrate, and the transition slope;
the insulating layer covering the transition slope surface is positioned between the protection structure and the semiconductor structure layer;
the solder layer is positioned on one side of the insulating layer, which faces away from the substrate.
10. A semiconductor laser chip as claimed in claim 9 wherein the material of the insulating layer comprises SiO2(ii) a The thickness of the insulating layer is 100 nm-300 nm.
11. A semiconductor laser chip as claimed in claim 9 further comprising:
the gold plating layer comprises a side gold plating layer and a luminous zone gold plating layer; the side gold-plating layer is positioned on the edge area of the semiconductor structure layer, and the insulating layer positioned on the surface of the edge area of the semiconductor structure layer isolates the side gold-plating layer from the edge area of the semiconductor structure layer; the light emitting area gold plating layer is positioned on the surface of the light emitting area, which is back to the substrate, and in the groove, and covers part of the insulating layer;
the thickness of the side gold-plating layer is larger than that of the light-emitting area gold-plating layer.
12. The semiconductor laser chip according to claim 11, wherein a difference between a thickness of the side gold-plating layer and a thickness of the light emitting region gold-plating layer is 1 μm to 3 μm.
13. The semiconductor laser chip of claim 6, wherein the semiconductor structure layer has opposite first and second sidewalls and opposite front and back cavity sidewalls, and the arrangement direction from the first to the second sidewall is perpendicular to the arrangement direction from the front to the back cavity sidewall, and the laser light generated by the semiconductor laser exits from the back cavity sidewall toward the front cavity sidewall; the protection structure on the transition slope surface adjacent to the first side wall and the protection structure on the first side wall are first protection structures, and the protection structure on the transition slope surface adjacent to the second side wall and the protection structure on the second side wall are second protection structures; the thickness of the second protection structure is greater than the thickness of the first protection structure.
14. A semiconductor laser chip as claimed in claim 13 wherein the first and second protective structures each comprise a layer of protective cells, the number of layers of protective cells in the second protective structure being greater than the number of layers of protective cells in the first protective structure;
the protection unit layer comprises a first insulation protection layer, a second insulation protection layer and a third insulation protection layer which are sequentially arranged from inside to outside of the semiconductor structure layerAn edge protection layer; the first insulating protective layer is made of Al2O3The second protective layer is made of silicon; the third insulating protective layer is made of SiO2。
15. A laser, comprising:
a semiconductor laser chip as claimed in any one of claims 6 to 14;
and the heat sink is positioned on one side of the solder layer, which faces away from the substrate, and the heat sink and the solder layer are welded together.
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CN102214895A (en) * 2010-04-07 2011-10-12 三菱电机株式会社 Semiconductor device and method for manufacturing the same
CN108365516A (en) * 2018-02-13 2018-08-03 中国科学院半导体研究所 The semiconductor laser and preparation method thereof of ridge array is coupled based on indium phosphide
CN108551077A (en) * 2018-03-08 2018-09-18 深圳瑞波光电子有限公司 A kind of semiconductor laser device and preparation method thereof
CN110061414A (en) * 2019-04-02 2019-07-26 苏州长光华芯光电技术有限公司 A kind of semiconductor laser chip

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Publication number Priority date Publication date Assignee Title
JPH05218586A (en) * 1992-02-04 1993-08-27 Mitsubishi Electric Corp Semiconductor laser device and manufacture of the same
CN101748367A (en) * 2009-12-24 2010-06-23 中国科学院上海微系统与信息技术研究所 Device and method used for plating films on cavity surfaces of semiconductor lasers
CN102214895A (en) * 2010-04-07 2011-10-12 三菱电机株式会社 Semiconductor device and method for manufacturing the same
CN108365516A (en) * 2018-02-13 2018-08-03 中国科学院半导体研究所 The semiconductor laser and preparation method thereof of ridge array is coupled based on indium phosphide
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