CN114045460A - Medium-far infrared semiconductor laser cavity surface metal film coating clamp - Google Patents
Medium-far infrared semiconductor laser cavity surface metal film coating clamp Download PDFInfo
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- CN114045460A CN114045460A CN202111257265.6A CN202111257265A CN114045460A CN 114045460 A CN114045460 A CN 114045460A CN 202111257265 A CN202111257265 A CN 202111257265A CN 114045460 A CN114045460 A CN 114045460A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/225—Oblique incidence of vaporised material on substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
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- Semiconductor Lasers (AREA)
Abstract
The invention discloses a metal film coating clamp for a cavity surface of a middle-far infrared semiconductor laser, which comprises: the chip clamping mechanism and the inclination angle adjusting mechanism; the chip clamping mechanism comprises a chip fixing component and a fixing frame; the chip fixing component is positioned in the fixing frame and used for accommodating and clamping a chip to be coated; the end surfaces of the chip fixing components, which are contacted with the chip to be coated, cover the upper surface and the lower surface of the chip to be coated; the cavity surface of the chip to be coated is obliquely arranged relative to the evaporation surface of the evaporation source; the fixed frame is matched with the inclination angle adjusting mechanism and is detachably connected with the inclination angle adjusting mechanism; the outer edge of one end of the fixed frame is rotatably connected with the inclination angle adjusting mechanism, and the other end of the fixed frame extends outwards to form a curved surface; the curved surface is provided with a strip-shaped sliding hole; the inclination angle adjusting mechanism is fixedly connected with the strip-shaped sliding hole through a bolt. The invention has simple structure and convenient clamping and can effectively avoid coating the upper and lower surfaces of the laser.
Description
Technical Field
The invention relates to the technical field of semiconductor laser coating devices, in particular to a medium and far infrared semiconductor laser cavity surface metal film coating clamp.
Background
The semiconductor laser chip is also called a semiconductor laser diode, and is divided into an edge-emitting semiconductor laser and a surface-emitting semiconductor laser in a light emitting direction. The semiconductor laser has the advantages of small volume, light weight, high power, long service life and the like, and is widely applied to the aspects of precision measuring instruments, low-light-level night vision systems, trace gas detection, communication, information transmission, military affairs and the like.
Generally, the cavity surface of a semiconductor laser is constituted by a cleaved surface, but the cleaved surface has a reflectance of only about 30%, which causes a problem of serious loss. Therefore, the optical output power of the laser can be improved by plating the antireflection film and the high-reflection film on the cleavage surface of the laser chip. Middle and far infraredThe wavelength of the output light of the semiconductor laser is in the order of several microns, and according to the optical thin film theory, the optical thickness of the plated thin film follows the quarter wavelength principle, and the extreme value of the reflectivity can be obtained at the central wavelength. The metal film has poor adhesion with the substrate and is soft and easy to scratch, so a buffer layer and a protective layer are required to be plated. Taking the InP-based 4.6 μm semiconductor laser cavity high-reflectivity film as an example, the reflectivity spectra of the designed all-dielectric high-reflectivity film and the designed dielectric-metal high-reflectivity film are shown in fig. 1. As can be seen from FIG. 1, the all-dielectric high-reflective film and the dielectric-metal high-reflective film have the same reflectance (99.4%) at the center wavelength of 4.6 μm, but their film thicknesses are greatly different. Usually, a medium-metal film is selected to be plated, the metal is mainly gold and titanium film materials, and Al is selected as the buffer layer and the protective layer2O3。
When a metal film is evaporated by electron beams, the vertical height of an evaporation source and a substrate is about 90cm, the evaporation of a film material has certain divergence, a cavity surface and the evaporation source are horizontal when the existing semiconductor laser chip film coating clamp is designed, the surface and the cavity surface of a chip are both coated with the metal film, and the electrode of the laser chip is short-circuited; meanwhile, the existing semiconductor laser chip coating clamp has a complex structure, is difficult to operate, and cannot continuously adjust the inclination angle of the cavity surface of the chip.
Therefore, the problem that needs to be solved by those skilled in the art is how to provide a metal film coating clamp for the cavity surface of the middle and far infrared semiconductor laser, which is simple in operation, convenient to clamp, and capable of changing the tilt angle of the cavity surface of the chip.
Disclosure of Invention
In view of this, the invention provides a metal film coating clamp for a cavity surface of a mid-infrared and far-infrared semiconductor laser, which has a simple structure and is convenient to clamp, and can effectively avoid coating on the upper surface and the lower surface of the laser.
In order to achieve the purpose, the invention adopts the following technical scheme:
a middle and far infrared semiconductor laser cavity surface metal film coating clamp comprises: the chip clamping mechanism and the inclination angle adjusting mechanism;
the chip clamping mechanism comprises a chip fixing component and a fixing frame; the chip fixing assembly is positioned in the fixing frame and used for accommodating and clamping a chip to be coated; the end face of the chip fixing component, which is contacted with the chip to be coated, covers the upper surface and the lower surface of the chip to be coated; the cavity surface of the chip to be coated is obliquely arranged relative to the evaporation surface of the evaporation source;
the fixed frame is matched with the inclination angle adjusting mechanism and is detachably connected with the inclination angle adjusting mechanism; the outer edge of one end of the fixed frame is rotatably connected with the inclination angle adjusting mechanism, and the other end of the fixed frame extends outwards to form a curved surface; the curved surface is provided with a strip-shaped sliding hole; the inclination angle adjusting mechanism is fixedly connected with the strip-shaped sliding hole through a bolt.
Preferably, in the fixture for coating the metal film on the cavity surface of the mid-infrared and far-infrared semiconductor laser, the chip fixing assembly comprises a T-shaped sliding block, a wafer bearing table and a first bolt; two sides of the fixed frame are respectively provided with a sliding chute, and the two sliding chutes are oppositely arranged; the top of the fixed frame is provided with a first threaded hole;
two ends of the T-shaped sliding block correspondingly extend into the sliding groove and are in sliding connection with the sliding groove; the wafer bearing table is provided with a groove for accommodating a chip to be coated; the groove corresponds to the lower end of the T-shaped sliding block in position and is adaptive to the lower end of the T-shaped sliding block in shape; the upper surface and the lower surface of the chip to be coated are respectively abutted against the groove bottom of the groove and the lower end face of the T-shaped sliding block, and the cavity face is close to the edge of the wafer bearing table; the first bolt penetrates through the first threaded hole and is fixedly connected with the top of the T-shaped sliding block.
Preferably, in the fixture for coating the metal film on the cavity surface of the mid-infrared and far-infrared semiconductor laser, a positioning groove is formed in the top of the T-shaped sliding block; the end part of the first bolt penetrates through the first threaded hole, extends into the positioning groove and is abutted against the bottom of the positioning groove.
Preferably, in the fixture for coating the metal film on the cavity surface of the mid-and-far infrared semiconductor laser, the surface of the groove and the bottom end of the T-shaped sliding block are both polished.
Preferably, in the fixture for coating a metal film on a cavity surface of a mid-and-far infrared semiconductor laser, the fixing frame comprises a first L-shaped frame and a second L-shaped frame; the ends of the first L-shaped frame and the second L-shaped frame are fixedly connected with each other to form a cubic structure.
Preferably, in the fixture for coating a metal film on a cavity surface of a mid-and-far infrared semiconductor laser, positioning holes are respectively arranged at positions where the first L-shaped frame and the second L-shaped frame are fixed to each other, and two adjacent positioning holes are coaxially arranged.
Preferably, in the fixture for coating the metal film on the cavity surface of the mid-far infrared semiconductor laser, two ends of the outer side of the fixed frame, which are close to the end part, are respectively provided with a limiting column; the limiting columns are symmetrically arranged.
Preferably, in the above fixture for coating a metal film on the cavity surface of a mid-and-far infrared semiconductor laser, the tilt angle adjusting mechanism comprises a portal frame, a second bolt and a positioning sheet; the two side ends of the door-shaped frame are respectively bent and extended vertically to form two parallel fixing columns, and an accommodating cavity for accommodating the fixing frame is formed between the two parallel fixing columns; a limiting groove is formed in one end, far away from the end part of the door-shaped frame, of the fixing column; the limiting column is matched with the limiting groove and is in rotating connection with the limiting groove; the top of the door frame is provided with a second threaded hole; the second bolt penetrates through the second threaded hole; the two positioning pieces are respectively in threaded connection with the second bolt and abut against the upper end and the lower end of the strip-shaped sliding hole; and adjusting the inclination degree of the cavity surface of the chip to be coated by screwing or unscrewing the second bolt.
Preferably, in the metal film coating clamp for the cavity surface of the mid-infrared and far-infrared semiconductor laser, the adjusting range of the included angle between the fixed frame and the inclination angle adjusting mechanism is 0-80 degrees.
According to the technical scheme, compared with the prior art, the invention discloses the fixture for coating the metal film on the cavity surface of the middle and far infrared semiconductor laser chip, which has the advantages of simple structure and simplicity and convenience in operation, can realize continuous adjustment of the inclination angle of the cavity surface of the laser chip, can be suitable for coating the metal film on the cavity surface of the middle and far infrared semiconductor laser chip with different sizes in a given coating system, can meet the coating requirements of the metal film on the cavity surface of the middle and far infrared semiconductor laser chip under different conditions only by adjusting the inclination angle according to specific environmental conditions in different coating systems, and can be suitable for electron beam coating equipment of different manufacturers. Meanwhile, the invention ensures that the upper surface and the lower surface of the laser chip are not coated with films in two ways, namely, the T-shaped sliding block and the groove of the wafer bearing table respectively cover the upper surface and the lower surface of the chip; and secondly, the cavity surface of the laser chip is inclined to the evaporation surface, so that the film material is effectively prevented from scattering and reaching the upper surface and the lower surface of the chip. The invention realizes the improvement of the uniformity of the film layer by continuously adjusting the cavity surface inclination angle of the laser chip, and the method directly changes the direction of the film material particles reaching the surface of the sample, thereby improving the nonuniformity of the film material caused by the divergence of the movement direction of the film material in the evaporation process.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a diagram showing a simulation of the reflectivity of an all-dielectric high-reflective film and a dielectric-metal high-reflective film according to the present invention;
FIG. 2 is a schematic structural diagram of a metal-plated film on the cavity surface of a mid-infrared semiconductor laser device according to the present invention;
FIG. 3 is a schematic structural diagram of a fixture for coating a metal film on a cavity surface of a mid-and-far infrared semiconductor laser according to the present invention;
FIG. 4 is a schematic structural view of a chip holding mechanism according to the present invention;
FIG. 5 is a schematic structural view of a chip to be plated clamped by the chip clamping mechanism according to the present invention;
fig. 6 is a schematic structural diagram of an inclination angle adjusting mechanism provided by the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment of the invention discloses a metal film coating clamp for a cavity surface of a middle and far infrared semiconductor laser, which comprises: a chip clamping mechanism 1 and an inclination angle adjusting mechanism 2;
the chip clamping mechanism 1 comprises a chip fixing component 11 and a fixing frame 12; the chip fixing component 11 is positioned in the fixing frame 12 and used for accommodating and clamping a chip to be coated; the end face of the chip fixing component 11, which is contacted with the chip to be coated, covers the upper surface and the lower surface of the chip to be coated; the cavity surface of the chip to be coated is obliquely arranged relative to the evaporation surface of the evaporation source;
the fixed frame 12 is matched with and detachably connected with the inclination angle adjusting mechanism 2; the outer edge of one end of the fixed frame 12 is rotatably connected with the tilt angle adjusting mechanism 2, and the other end extends outwards to form a curved surface 121; a strip-shaped sliding hole 122 is formed on the curved surface 121; the reclining mechanism 2 is fixedly connected to the strip-shaped slide hole 122 by a bolt.
In one embodiment, as shown in fig. 4-5, the die attach assembly 11 includes a T-shaped slide 111, a stage 112, and a first bolt 113; the two sides of the fixed frame 12 are respectively provided with a sliding chute 123, and the two sliding chutes 123 are oppositely arranged; the top of the fixed frame 12 is provided with a first threaded hole 124;
two ends of the T-shaped sliding block 111 correspondingly extend into the sliding groove 123 and are in sliding connection with the sliding groove 123; a groove 114 for accommodating a chip to be coated is formed on the wafer bearing table 112; the groove 114 corresponds to the lower end of the T-shaped sliding block 111 in position and is matched with the T-shaped sliding block in shape; the upper surface and the lower surface of the chip to be coated are respectively abutted with the groove bottom of the groove 114 and the lower end face of the T-shaped sliding block 111, and the cavity face of the chip is close to the edge of the wafer bearing table 112 but cannot exceed the edge; the first bolt 113 penetrates through the first threaded hole 124 and is fixedly connected with the top of the T-shaped sliding block 111.
The wafer bearing table 112 and the T-shaped sliding block 111 are core components of the fixture, and mainly play a role in clamping and covering the upper surface and the lower surface of the chip, so that the upper surface and the lower surface of the chip are effectively prevented from being coated with films. The groove surface of the wafer bearing platform 112 is the same as the lower end surface of the T-shaped sliding block 111 in size, the length is 20mm, and the width is 3.05 mm. Both sides of the chip are also blocked, only the cavity surface is exposed in the environment, and the pressure of the T-shaped sliding block 111 on the upper surface of the chip can be continuously adjusted through the first bolt 113, so that the upper surface of the chip cannot be damaged.
More advantageously, the top of the T-shaped slider 111 is provided with a positioning groove 115; the end of the first bolt 113 penetrates the first threaded hole 124, extends into the positioning groove 115, and abuts against the bottom of the positioning groove 115.
More advantageously, the surface of the groove 114 and the bottom end of the T-shaped slider 111 are polished. The groove surface of the wafer bearing table and the surface of the T-shaped sliding block are polished, so that the upper surface and the lower surface of the chip can be further completely covered.
In one embodiment, the fixed frame 12 includes a first L-shaped bracket 125 and a second L-shaped bracket 126; the ends of the first L-shaped frame 125 and the second L-shaped frame 126 are fixedly connected to each other to form a cubic structure.
The positions where the first L-shaped frame 125 and the second L-shaped frame 126 are fixed to each other are respectively provided with positioning holes 127, and two adjacent positioning holes 127 are coaxially arranged. The first L-shaped frame 125 and the second L-shaped frame 126 can be bonded by an adhesive, and whether the first L-shaped frame and the second L-shaped frame are aligned can be determined by determining whether two adjacent positioning holes are coaxial. The first L-shaped frame and the second L-shaped frame can also be fixed by bolts penetrating through two adjacent positioning holes.
In other embodiments, the fixed frame may have a shape other than a cubic structure, and may be adapted to the shape of the reclining mechanism 2.
In one embodiment, the outer sides of the fixed frame 12 near the ends are respectively provided with a spacing post 128; the restraint posts 128 are symmetrically disposed.
As shown in fig. 6, the reclining mechanism 2 includes a gate frame 21, a second bolt 22, and a positioning piece 23; the two side ends of the portal frame 21 are respectively bent and extended vertically to form two mutually parallel fixing columns 24, and an accommodating cavity for accommodating the fixed frame 12 is formed between the two mutually parallel fixing columns 24; one end of the fixing column 24, which is far away from the end part of the door frame 21, is provided with a limiting groove 25; the limiting column 128 is matched with the limiting groove 25 and is connected with the limiting groove in a rotating mode; a second threaded hole 26 is formed in the top of the portal frame 21; the second bolt 22 penetrates through the second threaded hole 26; two positioning pieces 23 are arranged, are respectively in threaded connection with the second bolt 22 and abut against the upper end and the lower end of the strip-shaped sliding hole 122; the inclination degree of the cavity surface of the chip to be coated is adjusted by screwing up or screwing down the second bolt 22.
The adjusting range of the included angle between the fixed frame 12 and the inclination angle adjusting mechanism 2 is 0-80 degrees.
Taking an InP-based 4.6 μm semiconductor laser chip with the thickness of 20mm by 3mm by 0.12mm as an example, the mounting process of the metal film coating clamp for the cavity surface of the far infrared semiconductor laser in the invention is as follows:
1. installing a chip clamping mechanism, adjusting the distance between the first L-shaped frame 125 and the second L-shaped frame 126 to enable the upper part of the T-shaped sliding block 111 to be arranged in the side sliding grooves 123 of the first L-shaped frame 125 and the second L-shaped frame 126 and to slide up and down, enabling the lower end of the T-shaped sliding block 111 to be matched with the groove 114 of the bearing table 112, and finally connecting and fixing the first L-shaped frame 125 and the second L-shaped frame 126 through the positioning hole 127.
2. Clamping a laser chip, wherein the laser chip 3 is arranged in a groove 114 of a wafer bearing table 112, a cavity surface is close to the edge of the groove 114 of the wafer bearing table 112, and a first bolt 113 on a first L-shaped frame 125 is adjusted to enable a T-shaped sliding block 111 to slide downwards to cover the surface of the chip 3 and tightly press the chip 3; because the groove surfaces of the T-shaped sliding block 111 and the wafer bearing platform 112 have certain widths, the upper surface and the lower surface of the chip can be completely covered.
3. And (3) mounting the clamp, placing the limiting column 128 of the chip clamping mechanism 1 with the clamped chip in the limiting groove 25 on the inclination angle adjusting mechanism 2, and enabling the second bolt 22 on the door-shaped frame 21 to penetrate through the strip-shaped hole 122 of the second L-shaped frame 126 and be fixed by the limiting piece 23.
4. And adjusting the inclination degree of the cavity surface of the laser chip 3, turning the second bolt 22 upwards or downwards after the fixture is mounted, and adjusting the included angle between the cavity surface and the evaporation plane to be 60 degrees.
5. Installing the adjusted fixture into a vapor deposition system, and performing cavity surface film coating; the cavity surface of the laser chip is inclined to the evaporation surface, and the upper surface and the lower surface of the chip are covered by the groove surfaces of the T-shaped sliding block 111 and the wafer bearing table 112, so that the short circuit of electrodes during the evaporation of metal films on the cavity surface of the chip can be effectively avoided.
6. Taking out the chip 3 for detection, if the surface of the chip is coated with a film, indicating that the cavity surface of the laser chip exceeds or is too close to the edge of the groove of the chip bearing table when the chip is clamped; if the thickness distribution of the sample is not uniform, the inclination angle of the sample needs to be adjusted.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. The utility model provides a well far infrared semiconductor laser chamber face metallic film coating anchor clamps which characterized in that includes: a chip clamping mechanism (1) and an inclination angle adjusting mechanism (2);
the chip clamping mechanism (1) comprises a chip fixing component (11) and a fixing frame (12); the chip fixing component (11) is positioned in the fixing frame (12) and is used for accommodating and clamping a chip to be coated; the end face of the chip fixing component (11) which is contacted with the chip to be coated covers the upper surface and the lower surface of the chip to be coated; the cavity surface of the chip to be coated is obliquely arranged relative to the evaporation surface of the evaporation source;
the fixed frame (12) is matched with the inclination angle adjusting mechanism (2) and is detachably connected with the inclination angle adjusting mechanism; the outer edge of one end of the fixed frame (12) is rotatably connected with the inclination angle adjusting mechanism (2), and the other end of the fixed frame extends outwards to form a curved surface (121); a strip-shaped sliding hole (122) is formed in the curved surface (121); the inclination angle adjusting mechanism (2) is fixedly connected with the strip-shaped sliding hole (122) through a bolt.
2. The fixture for plating metal films on the cavity surfaces of mid-infrared and far-infrared semiconductor lasers as claimed in claim 1, wherein the chip fixing assembly (11) comprises a T-shaped sliding block (111), a wafer bearing platform (112) and a first bolt (113); sliding grooves (123) are respectively formed in two sides of the fixed frame (12), and the two sliding grooves (123) are oppositely arranged; the top of the fixed frame (12) is provided with a first threaded hole (124);
two ends of the T-shaped sliding block (111) correspondingly extend into the sliding groove (123) and are in sliding connection with the sliding groove (123); a groove (114) for accommodating a chip to be coated is formed in the wafer bearing table (112); the groove (114) corresponds to the lower end of the T-shaped sliding block (111) in position and is matched with the lower end of the T-shaped sliding block in shape; the upper surface and the lower surface of the chip to be coated are respectively abutted against the groove bottom of the groove (114) and the lower end face of the T-shaped sliding block (111), and the cavity face is close to the edge of the wafer bearing table (112); the first bolt (113) penetrates through the first threaded hole (124) and is fixedly connected with the top of the T-shaped sliding block (111).
3. The clamp for coating metal films on the cavity surfaces of middle and far infrared semiconductor lasers as claimed in claim 2, wherein a positioning groove (115) is formed at the top of the T-shaped slider (111); the end part of the first bolt (113) penetrates through the first threaded hole (124), extends into the positioning groove (115), and is abutted against the bottom of the positioning groove (115).
4. The fixture for plating metal films on cavity surfaces of mid-and far-infrared semiconductor lasers as claimed in claim 2, wherein the surface of the groove (114) and the bottom end of the T-shaped slider (111) are both polished.
5. The fixture for coating metal films on cavity surfaces of mid-and-far infrared semiconductor lasers as claimed in claim 1, wherein the fixed frame (12) comprises a first L-shaped frame (125) and a second L-shaped frame (126); the ends of the first L-shaped frame (125) and the second L-shaped frame (126) are fixedly connected with each other to form a cubic structure.
6. The fixture for coating metal films on cavity surfaces of mid-and-far infrared semiconductor lasers as claimed in claim 5, wherein positioning holes (127) are respectively formed at positions where the first L-shaped frame (125) and the second L-shaped frame (126) are fixed to each other, and two adjacent positioning holes (127) are coaxially arranged.
7. The fixture for plating the metal film on the cavity surface of the mid-far infrared semiconductor laser according to claim 1, wherein two ends of the outer side of the fixed frame (12) near the end are respectively provided with a limiting column (128); the limiting columns (128) are symmetrically arranged.
8. The fixture for plating the metal film on the cavity surface of the mid-far infrared semiconductor laser according to claim 7, wherein the tilt angle adjusting mechanism (2) comprises a portal frame (21), a second bolt (22) and a positioning sheet (23); the two side ends of the door frame (21) are respectively bent and extended vertically to form two mutually parallel fixing columns (24), and an accommodating cavity for accommodating the fixing frame (12) is formed between the two mutually parallel fixing columns (24); a limiting groove (25) is formed in one end, far away from the end part of the door-shaped frame (21), of the fixing column (24); the limiting column (128) is matched with the limiting groove (25) and is in rotating connection with the limiting groove; a second threaded hole (26) is formed in the top of the door frame (21); the second bolt (22) penetrates through the second threaded hole (26); two positioning pieces (23) are arranged, are respectively in threaded connection with the second bolt (22), and are abutted against the upper end and the lower end of the strip-shaped sliding hole (122); and the inclination degree of the cavity surface of the chip to be coated is adjusted by screwing up or screwing down the second bolt (22).
9. The fixture for coating metal films on the cavity surfaces of mid-and-far infrared semiconductor lasers as claimed in claim 1, wherein the adjusting range of the included angle between the fixed frame (12) and the tilt angle adjusting mechanism (2) is 0-80 °.
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| CN202111257265.6A CN114045460B (en) | 2021-10-27 | 2021-10-27 | Medium-far infrared semiconductor laser cavity surface metal film plating clamp |
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| CN202111257265.6A CN114045460B (en) | 2021-10-27 | 2021-10-27 | Medium-far infrared semiconductor laser cavity surface metal film plating clamp |
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| CN114045460B CN114045460B (en) | 2023-06-16 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115274541A (en) * | 2022-07-28 | 2022-11-01 | 陕西理工大学 | Clamping fixture for end face coating of semiconductor laser chip |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002016310A (en) * | 2000-06-28 | 2002-01-18 | Opnext Japan Inc | Method for manufacturing semiconductor optical element, clamp jig and alignment jig |
| JP2002164610A (en) * | 2000-11-28 | 2002-06-07 | Sharp Corp | Method for coating semiconductor laser end surface and fixing frame |
| JP2003197582A (en) * | 2001-12-25 | 2003-07-11 | Sharp Corp | Semiconductor chip plane grinding fixture, grinding apparatus using the same, and method of manufacturing sample for analysis of semiconductor chip |
| CN101748367A (en) * | 2009-12-24 | 2010-06-23 | 中国科学院上海微系统与信息技术研究所 | Device and method used for plating films on cavity surfaces of semiconductor lasers |
| CN103225068A (en) * | 2013-04-01 | 2013-07-31 | 武汉电信器件有限公司 | Clamping fixture for film coating of end surfaces of semiconductor laser chips |
| CN204333598U (en) * | 2015-01-29 | 2015-05-13 | 中国电子科技集团公司第十三研究所 | A kind of semiconductor laser chip cavity surface film coating fixture |
| JP2016122757A (en) * | 2014-12-25 | 2016-07-07 | パナソニック株式会社 | Manufacturing method and apparatus for semiconductor laser device |
| CN208733218U (en) * | 2018-09-13 | 2019-04-12 | 济南华度光学技术有限公司 | A kind of optic side plated film adjustable angle has the fixture of defencive function |
| CN209665165U (en) * | 2018-12-27 | 2019-11-22 | 中国电子科技集团公司第十一研究所 | A kind of surface coating grip device of infrared detector |
| CN111501042A (en) * | 2020-06-02 | 2020-08-07 | 海南师范大学 | Edge-emitting semiconductor laser chip cavity surface coating clamp |
| CN112207778A (en) * | 2020-10-30 | 2021-01-12 | 东莞市海轮电子科技有限公司 | Novel anchor clamps of industry electronic production processing usefulness |
| CN213507166U (en) * | 2020-11-08 | 2021-06-22 | 江西华派光电科技有限公司 | Continuously adjustable gradient vacuum electron gun coating device |
-
2021
- 2021-10-27 CN CN202111257265.6A patent/CN114045460B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002016310A (en) * | 2000-06-28 | 2002-01-18 | Opnext Japan Inc | Method for manufacturing semiconductor optical element, clamp jig and alignment jig |
| JP2002164610A (en) * | 2000-11-28 | 2002-06-07 | Sharp Corp | Method for coating semiconductor laser end surface and fixing frame |
| JP2003197582A (en) * | 2001-12-25 | 2003-07-11 | Sharp Corp | Semiconductor chip plane grinding fixture, grinding apparatus using the same, and method of manufacturing sample for analysis of semiconductor chip |
| CN101748367A (en) * | 2009-12-24 | 2010-06-23 | 中国科学院上海微系统与信息技术研究所 | Device and method used for plating films on cavity surfaces of semiconductor lasers |
| CN103225068A (en) * | 2013-04-01 | 2013-07-31 | 武汉电信器件有限公司 | Clamping fixture for film coating of end surfaces of semiconductor laser chips |
| JP2016122757A (en) * | 2014-12-25 | 2016-07-07 | パナソニック株式会社 | Manufacturing method and apparatus for semiconductor laser device |
| CN204333598U (en) * | 2015-01-29 | 2015-05-13 | 中国电子科技集团公司第十三研究所 | A kind of semiconductor laser chip cavity surface film coating fixture |
| CN208733218U (en) * | 2018-09-13 | 2019-04-12 | 济南华度光学技术有限公司 | A kind of optic side plated film adjustable angle has the fixture of defencive function |
| CN209665165U (en) * | 2018-12-27 | 2019-11-22 | 中国电子科技集团公司第十一研究所 | A kind of surface coating grip device of infrared detector |
| CN111501042A (en) * | 2020-06-02 | 2020-08-07 | 海南师范大学 | Edge-emitting semiconductor laser chip cavity surface coating clamp |
| CN112207778A (en) * | 2020-10-30 | 2021-01-12 | 东莞市海轮电子科技有限公司 | Novel anchor clamps of industry electronic production processing usefulness |
| CN213507166U (en) * | 2020-11-08 | 2021-06-22 | 江西华派光电科技有限公司 | Continuously adjustable gradient vacuum electron gun coating device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115274541A (en) * | 2022-07-28 | 2022-11-01 | 陕西理工大学 | Clamping fixture for end face coating of semiconductor laser chip |
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|---|---|
| CN114045460B (en) | 2023-06-16 |
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