CN101719491B - Structure and method for encapsulating light-emitting diode - Google Patents
Structure and method for encapsulating light-emitting diode Download PDFInfo
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- CN101719491B CN101719491B CN2009101103273A CN200910110327A CN101719491B CN 101719491 B CN101719491 B CN 101719491B CN 2009101103273 A CN2009101103273 A CN 2009101103273A CN 200910110327 A CN200910110327 A CN 200910110327A CN 101719491 B CN101719491 B CN 101719491B
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- emitting diode
- crystal particle
- case chip
- fluorescent powder
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Abstract
The invention provides a structure and a method for encapsulating a light-emitting diode. The structure for encapsulating the light-emitting diode comprises a light-emitting diode bracket and a light-emitting diode crystal grain fixed to the bottom plane of the light-emitting diode bracket. The structure for encapsulating the light-emitting diode also comprises a case chip and a fluorescent powder body coat, wherein the case chip is fixedly arranged on the upper surface of the light-emitting diode crystal grain; and the fluorescent powder body coat is arranged on the case chip in a printing or laser spraying mode. The invention also discloses the method for encapsulating the light-emitting diode. The structure and the method have the advantages of high utilization efficiency of a light source, and capability of effectively avoiding pollution to the light-emitting diode crystal grain, saving energy sources, enabling the fluorescent powder to be uniformly distributed, activating the fluorescent powder at the same time so as to enhance the brightness, and greatly lowering the cost due to the adoption of a modularized batch production mode and the like.
Description
Technical field
The present invention relates to a kind of encapsulating structure of light-emitting diode, especially relate to a kind of encapsulating structure and method for packing thereof of light-emitting diode.
Background technology
Light-emitting diode abbreviates LED as.Diode by the compound of gallium (Ga) and arsenic (AS), phosphorus (P) is made can give off visible light when electronics and hole-recombination, thereby can be used for making light-emitting diode, as indicator light, perhaps forms literal or numeral demonstration in circuit and instrument.The gallium arsenide phosphide diode glows, gallium phosphide diode green light, silicon carbide diode jaundice light.
Light-emitting diode is a kind of of semiconductor diode, can change into luminous energy to electric energy; Often be abbreviated as LED.Light-emitting diode is the same with general-purpose diode to be made up of a PN junction, also has unilateral conduction.After adding forward voltage to light-emitting diode, be injected into the hole in N district from the P district and be injected into the electronics in P district by the N district, near PN junction in several microns respectively with the electronics in N district and the hole-recombination in P district, produce the fluorescence of spontaneous radiation.Electronics is different with the residing energy state in hole in the different semi-conducting materials.What are different for the energy that discharges during with hole-recombination when electronics, and the energy that discharges is many more, and the light wavelength of then sending is short more.Commonly used is glows, the diode of green glow or gold-tinted.
Compare with light sources such as small filament lamp bubble and neon lamps, the characteristics of light-emitting diode have operating voltage very low (more several volts that have); Operating current very little (the only zero point that has several milliamperes can be luminous); Shock resistance and anti-seismic performance are good, the reliability height, and the life-span is long; The electric current power of passing through by modulation is the power of modulated luminescence easily.Because these characteristics are arranged, light-emitting diode is used as light source in some photoelectric control equipments, be used as Signal Monitor in many electronic equipments.
Simultaneously, by the effort of this area person skilled, light-emitting diode is the light source such as replace incandescent gradually in some fields, becomes the leading role in the lighting technology.Simultaneously, be structurally or on the manufacture method all to improve to some extent to light-emitting diode.
As the patent No. is 02140284.1, the encapsulating structure of master and slave type light-emitting diode by name and the Chinese invention patent of method are improved to the light-emitting diode of above-mentioned prior art: " encapsulating structure of master and slave type light-emitting diode and the method " of this invention, it is the LED encapsulation daughter element that LED crystal grain is packaged into surface mounted (SMD) earlier, enclose in package casing parent of another big tool groove with single or a plural number SMDLED again, form the encapsulating structure of master and slave type, its advantage is to make white light LEDs etc. when using the light-emitting diode of phosphor powder, the yield and the light uniformity that are packaged into the SMD type earlier are all very high, and can be according to brightness, the Vf of LED or photochromic x, the demand of y value is picked out suitable SMD LED earlier and is enclosed in the same structure, also structure fabrication goes out by many SMD type LED set to form single bigger high-power LED thus, has advantage on many processing procedures so be packaged into the structure of SMD the mode in the big tool groove package casing of enclosing again earlier.
By as can be seen above, the relevant timely personnel in prior art and follow-up this area, have certain progressive, but with regard to present technology, still have the deficiency of the following aspects for the luminous lighting field the improvement of light-emitting diode:
1, the light-emitting diode secondary encapsulating structure that prior art provided, because what it adopted is simple at LED crystal particle surface-coated fluorescent material, and then be fixed into spherical by transparent resin, the fluorescent material that such structure can cause being coated in the diode crystal particle surface is thicker and peripheral thinner at the thickness of middle position, cause light that its LED crystal particle sends stimulation effect difference to the middle position fluorescent material different with peripheral thickness, peripheral thickness is thinner, be easy to fully excite, and middle position is thicker, the fluorescent material of outer surface owing to internal layer fluorescent material to the absorption of light with stop the underexcitation state that is in, as the luminous intensity that improves crystal grain fully excites the fluorescent material of middle position extexine, then the fluorescent material of Zhou Bian thinner thickness will be in excessively and excite, make exciting of fluorescent material inhomogeneous, illumination effect is not good, luminous efficiency reduces, and light repeatedly reflects in the thicker phosphor powder layer of middle position and sends out and do not go out, not only cause the utilization ratio of light source low, and can cause light-emitting diode overheated, caused the waste of the energy.
2, simultaneously, because LED crystal particle is not that table is luminous, but it is stereo luminous, the light-emitting diode secondary encapsulating structure of prior art, when coating fluorescent powder, except that covering the crystal grain upper surface, also can around crystal grain, form very thick phosphor powder layer, and the light that the LED crystal particle side surface is sent is very poor to the stimulation effect of very thick like this phosphor powder layer, can not make full use of the light that the light-emitting diode side surface sends, the luminous efficiency of light-emitting diode is reduced.
3 and, because the coating of fluorescent material is inhomogeneous, the consumption that fluorescence is divided increases, and causes the raising greatly of cost, and the serious waste of resource.
4,, in the process of encapsulation, cause the damage or the pollution of LED crystal particle easily because the mode that prior art adopted need be filled light transmissive material or fluorescent material on LED crystal particle.
Summary of the invention
In view of the above-mentioned problems in the prior art, the purpose of this invention is to provide a kind of utilization ratio height with light source, and can effectively avoid pollution to LED crystal particle, energy savings, while can make fluorescent material excite at one time, increase brightness, simultaneously, adopting in batches, modular generates the encapsulating structure of a kind of light-emitting diode that reduces cost greatly and method for packing thereof.
For realizing above-mentioned purpose of the present invention, the invention provides a kind of encapsulating structure of light-emitting diode, comprising: a LED support; LED crystal particle, described LED crystal particle are fixed on the base plane of described LED support; Wherein, the encapsulating structure of described light-emitting diode also comprises: a case chip, described case chip are fixedly set in described LED crystal particle upper surface; One fluorescent powder coating, described fluorescent powder coating is arranged on the described case chip for the mode of printing or laser spraying.
According to above-mentioned design of the present invention, described fluorescent powder coating is for evenly being coated on the upper surface of described case chip.
According to above-mentioned design of the present invention, described case chip is the package sheet that the case chip of glass material or the mold pressing of transparent colloid material or casting form.
According to above-mentioned design of the present invention, the light transmittance of described case chip is between the 1.2-1.5.
According to above-mentioned design of the present invention, described LED crystal particle is one; Or described LED crystal particle is a plurality of, and described a plurality of LED crystal particle is coordinate with the base plane center of described LED support, and described LED crystal particle is regularly arranged on X-axis and Y-axis.
According to above-mentioned design of the present invention, described LED crystal particle is one; Or described LED crystal particle is a plurality of, and described a plurality of LED crystal particle is coordinate with the base plane center of described LED support, the adjacent two LED crystal particle arrangement that misplaces on X-axis and Y-axis arbitrarily.
The invention also discloses a kind of light emitter diode seal method, wherein, described light emitter diode seal method comprises the steps:
Step 1, fixing LED crystal particle are fixed in a plurality of or multi-group light-emitting diode crystal grain on the base plane of described LED support, and be separated by a distance between adjacent single or single group LED crystal particle;
According to above-mentioned design of the present invention, described step 3 prepares the fluorescent powder coating and comprises:
At first, according to predetermined ratio fluorescent material evenly is blended in the transparent colloid material;
Secondly, the mode by printing or laser spraying will describedly be blended in the upper surface that fluorescent powder in the transparent colloid material is fixed in described case chip, formation fluorescent powder coating.
According to above-mentioned design of the present invention, described step 4 fixed sealing load is by epoxy resin, silica gel or silicon rubber described case chip is fitted in described LED crystal particle upper surface.
Advantage of the present invention and beneficial effect are, having remedied existing in prior technology fluorescent material excites inhomogeneous and marginal ray to utilize insufficient and makes the utilization ratio of light source low, brightness is low, causes light-emitting diode secondary encapsulating structure overheated easily, causes the deficiencies such as waste of the energy.Utilization ratio height with light source, and can effectively avoid pollution to LED crystal particle, can make fluorescent material evenly arrange simultaneously at energy savings, and the same time excites, and increases brightness.Simultaneously, the present invention adopts in batches modular production, and advantage such as can reduce cost greatly.
Description of drawings
Fig. 1 is the cross section structure schematic diagram of first embodiment of the encapsulating structure of a kind of light-emitting diode of the present invention;
Fig. 2 is the cross section structure schematic diagram of second embodiment of the encapsulating structure of a kind of light-emitting diode of the present invention;
Fig. 3 is the flow chart of a kind of light emitter diode seal method of the present invention.
Embodiment
In order to further specify principle of the present invention and structure, existing in conjunction with the accompanying drawings to a preferred embodiment of the present invention will be described in detail, however the described embodiment usefulness for furnishing an explanation and explaining only can not be used for limiting scope of patent protection of the present invention.
Encapsulating structure before a kind of light-emitting diode as shown in Figures 1 and 2 comprises: a LED support; LED crystal particle, described LED crystal particle are fixed on the base plane of described LED support; Wherein, the encapsulating structure of described light-emitting diode also comprises: a case chip, described case chip are fixedly set in described LED crystal particle upper surface; One fluorescent powder coating, described fluorescent powder coating is arranged on the described case chip for the mode of printing or laser spraying.
According to above-mentioned design of the present invention, described fluorescent powder coating is for evenly being coated on the upper surface of described case chip.
According to above-mentioned design of the present invention, described case chip is the package sheet that the case chip of glass material or the mold pressing of transparent colloid material or casting form.
According to above-mentioned design of the present invention, the light transmittance of described case chip is between the 1.2-1.5.
According to above-mentioned design of the present invention, described LED crystal particle is one; Or described LED crystal particle is a plurality of, and described a plurality of LED crystal particle is coordinate with the base plane center of described LED support, and described LED crystal particle is regularly arranged on X-axis and Y-axis.
According to above-mentioned design of the present invention, described LED crystal particle is one; Or described LED crystal particle is a plurality of, and described a plurality of LED crystal particle is coordinate with the base plane center of described LED support, the adjacent two LED crystal particle arrangement that misplaces on X-axis and Y-axis arbitrarily.
As shown in Figure 3, the invention also discloses a kind of light emitter diode seal method, wherein, described light emitter diode seal method comprises the steps:
Step 1, fixing LED crystal particle are fixed in a plurality of or multi-group light-emitting diode crystal grain on the base plane of described LED support, and be separated by a distance between adjacent single or single group LED crystal particle;
According to above-mentioned design of the present invention, described step 3 prepares the fluorescent powder coating and comprises:
At first, according to predetermined ratio fluorescent material evenly is blended in the transparent colloid material;
Secondly, the mode by printing or laser spraying will describedly be blended in the upper surface that fluorescent powder in the transparent colloid material is fixed in described case chip, formation fluorescent powder coating.
According to above-mentioned design of the present invention, described step 4 fixed sealing load is by epoxy resin, silica gel or silicon rubber described case chip is fitted in described LED crystal particle upper surface.
Advantage of the present invention and beneficial effect are, having remedied existing in prior technology fluorescent material excites inhomogeneous and marginal ray to utilize insufficient and makes the utilization ratio of light source low, brightness is low, causes light-emitting diode secondary encapsulating structure overheated easily, causes the deficiencies such as waste of the energy.Utilization ratio height with light source, and can effectively avoid pollution to LED crystal particle, can make fluorescent material evenly arrange simultaneously at energy savings, and the same time excites, and increases brightness.Simultaneously, the present invention adopts in batches modular production, and advantage such as can reduce cost greatly.
Above content be in conjunction with concrete preferred implementation to further describing that the present invention did, can not assert that concrete enforcement of the present invention is confined to these explanations.For the general technical staff of the technical field of the invention, without departing from the inventive concept of the premise, can also make some simple deduction or replace, all should be considered as belonging to protection scope of the present invention.
Claims (3)
1. light emitter diode seal method is characterized in that:
Described light emitter diode seal method comprises the steps:
Step 1, fixing LED crystal particle are fixed in a plurality of or multi-group light-emitting diode crystal grain on the base plane of described LED support, and be separated by a distance between adjacent single or single group LED crystal particle;
Step 2, preparation case chip;
Step 3, preparation fluorescent powder coating are about to fluorescent powder and are coated on uniformly on the described case chip;
Step 4, fixed sealing load are about to described case chip and fixedly fit on the described LED support that is fixed with LED crystal particle, and described case chip are close to the upper surface of described LED crystal particle;
Step 5, cutting are about to corresponding described adjacent single or single preset distance of organizing between the LED crystal particle and cut, and form a plurality of light emitting diode constructions.
2. a kind of light emitter diode seal method according to claim 1 is characterized in that:
Preparation fluorescent powder coating comprises in the described step 3:
At first, according to predetermined ratio fluorescent material evenly is blended in the transparent colloid material;
Secondly, the mode by printing or laser spraying will describedly be blended in the upper surface that fluorescent powder in the transparent colloid material is fixed in described case chip, formation fluorescent powder coating.
3. a kind of light emitter diode seal method according to claim 1 is characterized in that:
Described step 4 fixed sealing load is by epoxy resin, silica gel or silicon rubber described case chip is fitted in described LED crystal particle upper surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101103273A CN101719491B (en) | 2009-10-27 | 2009-10-27 | Structure and method for encapsulating light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101103273A CN101719491B (en) | 2009-10-27 | 2009-10-27 | Structure and method for encapsulating light-emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101719491A CN101719491A (en) | 2010-06-02 |
| CN101719491B true CN101719491B (en) | 2011-06-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2009101103273A Expired - Fee Related CN101719491B (en) | 2009-10-27 | 2009-10-27 | Structure and method for encapsulating light-emitting diode |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102339935B (en) * | 2010-07-15 | 2015-07-08 | 展晶科技(深圳)有限公司 | Flip-chip-type LED (light-emitting diode) package structure |
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Granted publication date: 20110615 Termination date: 20191027 |