CN101691910B - LED packaging module and preparation method thereof - Google Patents
LED packaging module and preparation method thereof Download PDFInfo
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- CN101691910B CN101691910B CN2009101087355A CN200910108735A CN101691910B CN 101691910 B CN101691910 B CN 101691910B CN 2009101087355 A CN2009101087355 A CN 2009101087355A CN 200910108735 A CN200910108735 A CN 200910108735A CN 101691910 B CN101691910 B CN 101691910B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 12
- 238000002360 preparation method Methods 0.000 title claims description 4
- 239000000956 alloy Substances 0.000 claims abstract description 28
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000013078 crystal Substances 0.000 claims description 44
- 239000007787 solid Substances 0.000 claims description 32
- 230000007704 transition Effects 0.000 claims description 26
- 238000003466 welding Methods 0.000 claims description 15
- 238000001816 cooling Methods 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 229910017750 AgSn Inorganic materials 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 239000011265 semifinished product Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 55
- 238000007747 plating Methods 0.000 description 11
- 238000005538 encapsulation Methods 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 239000012790 adhesive layer Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910017937 Ag-Ni Inorganic materials 0.000 description 3
- 229910017984 Ag—Ni Inorganic materials 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000004070 electrodeposition Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000000741 silica gel Substances 0.000 description 3
- 229910002027 silica gel Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007602 hot air drying Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- Led Device Packages (AREA)
Abstract
The invention relates to LED package used for illuminating. A substrate and an LED chip are arranged. The substrate is provided with a die bonding surface and a wiring surface. The die bonding surface and the wiring surface are arranged in parallel. The die bonding surface is lower than the wiring surface. A reflection transitional surface is arranged between the die bonding surface and the wiring surface. The LED chip is arranged on the die bonding surface. A heat sink layer is arranged between the die bonding surface and the LED chip and is made of AuSn alloys, wherein, the content of Au is 1-10% and the content of Sn is 90-99%, and the heat sink layer is 0.001-0.05mm in thickness. The invention provides an LED packaging module giving consideration to both the thermal conductivity and firmness between the LED chip and a component on the bottom layer and provides a method for preparing the LED packaging module.
Description
Technical Field
The invention relates to an LED package for illumination.
Background
Compared with the traditional lighting device, the LED street lamp not only has the characteristics of good chromaticity, no maintenance and long service life, but also more importantly, is more energy-saving than the traditional street lamp.
Chinese patent documents CN 101101101103, CN101101102 and CN 101101101107 disclose LED street lamps, respectively, the heat dissipation performance of which has reached the practical level. The three LED street lamps represent the mainstream of the LED lighting technology in the market, including tunnel lamps and indoor lighting lamps, and the core technology thereof is very similar to the content disclosed in the patent documents. In the technology, a plurality of single LED bulbs are arranged on an aluminum substrate with a printed circuit, then a heat radiator is attached to the back of the aluminum substrate, and a heat radiating fin is arranged on the back surface of the heat radiator.
However, the above prior art still has shortcomings, which restrict the popularization and application of LED lighting technology. In the LED bulb adopted in the prior art, the LED chip is arranged through the silver paste, so that the using amount of silver is too small, and the heat conducting property is poor; the silver consumption is too large, the cost is high and the firmness is not good; it is difficult to achieve both thermal conductivity and firmness.
Disclosure of Invention
The present invention is directed to overcoming the above-mentioned disadvantages of the prior art, and to providing an LED package module that combines thermal conductivity and robustness between an LED chip and a bottom member, and a method for manufacturing the LED package module.
The purpose of the invention can be realized by the following technical scheme:
LED encapsulation module, including base plate and LED chip, its characterized in that: the substrate is provided with a solid crystal face and a wiring face, the solid crystal face and the wiring face are arranged in parallel, the height of the solid crystal face is lower than that of the wiring face, and a reflection transition face is arranged between the solid crystal face and the wiring face; the LED chip is arranged on the solid crystal face, a heat sink layer is arranged between the solid crystal face and the LED chip, the heat sink layer is made of AuSn alloy, the content of Au is 1% -10%, the content of Sn is 90% -99%, and the thickness of the heat sink layer is 0.001mm-0.05 mm.
LED encapsulation module, its characterized in that: the AuSn alloy comprises 4-9% of Au, 91-96% of Sn and 0.005-0.02 mm of heat sink layer.
LED encapsulation module, its characterized in that: AgSn alloy is used to replace AuSn alloy, and the content of Ag is 1% -25%, and the content of Sn is 75% -99%.
LED encapsulation module, its characterized in that: the surface of the LED chip is also provided with a fluorescent layer.
LED encapsulation module, its characterized in that: the wiring surface is arranged on the top surface of the substrate, the number of the reflection transition surfaces is two, the two reflection transition surfaces are respectively arranged on two sides of the solid crystal surface, and the solid crystal surface and the reflection transition surfaces form a long-strip-shaped groove.
LED encapsulation module, its characterized in that: the two reflecting transition surfaces are both planes and are symmetrically arranged on two sides of the solid crystal surface.
LED encapsulation module, its characterized in that: the AuSn alloy comprises the components of 6% of Au, 94% of Sn and 0.01mm of heat sink layer; the surface of the LED chip is also provided with a fluorescent layer; the wiring surface is arranged on the top surface of the substrate, the number of the reflection transition surfaces is two, the two reflection transition surfaces are respectively arranged on two sides of the crystal fixing surface, and the crystal fixing surface and the reflection transition surfaces form a strip-shaped groove; the two reflecting transition surfaces are both planes and are symmetrically arranged on two sides of the solid crystal surface.
LED encapsulation module, its characterized in that: replacing AuSn alloy with AgSn alloy, wherein the content of Ag is 9%, and the content of Sn is 91%; the thickness of the heat sink layer is 0.01 mm; the surface of the LED chip is also provided with a fluorescent layer; the wiring surface is arranged on the top surface of the substrate, the number of the reflection transition surfaces is two, the two reflection transition surfaces are respectively arranged on two sides of the crystal fixing surface, and the crystal fixing surface and the reflection transition surfaces form a strip-shaped groove; the two reflecting transition surfaces are both planes and are symmetrically arranged on two sides of the solid crystal surface.
The purpose of the invention can be realized by the following technical scheme:
the preparation method of the LED packaging module is used for manufacturing the LED packaging module as claimed in claim 1 or claim 3, and comprises a die bonding process, wherein the die bonding process comprises the following steps: (1) arranging a heat sink layer, (2) placing an LED chip, (3) welding, and (4) cooling, wherein the heat sink layer arranged in the step (1) adopts a vacuum sputtering mode; the step (2) of placing the LED chip is to place the LED chip on the heat sink layer; the welding in the step (3) refers to passing the semi-finished product prepared in the step (2) through a welding furnace, wherein the temperature of the welding furnace is 250-300 ℃; and (4) cooling in the step (4) is normal-temperature wind cooling.
According to the LED packaging module, the LED chip is arranged on the solid crystal face, the heat sink layer is arranged between the solid crystal face and the LED chip and is made of AuSn alloy, wherein the content of Au is 4% -9%, the content of Sn is 91% -96%, and the thickness of the heat sink layer is 0.005mm-0.02 mm; the AuSn alloy is firm because the crystal solidification is not adhered but welded, and the AuSn alloy is also a high-heat-conductivity material, so that the requirement of heat dissipation to the reverse side can be met. Just because the heat sink material layer AuSn alloy can be set to be 0.005mm-0.02mm thick, the traditional silver colloid can only adopt the processes of smearing and the like but can not adopt the vacuum plating processes of vacuum sputtering and the like, and the AuSn alloy can adopt the vacuum sputtering and vacuum plating processes; the thickness value is an empirical value, and too thick results in waste and hinders heat dissipation, and too thin results in weak welding. Compared with the prior art, the LED packaging module can give consideration to both the heat conductivity and the firmness between the LED chip and the bottom layer component. Another technical solution of the present invention is a method for manufacturing an LED package module according to the above-mentioned solution, and is therefore filed for filing. Based on the reasons, the LED packaging module prepared by the method can also take account of the heat conductivity and firmness between the LED chip and the bottom layer component, and has a better effect.
Drawings
Fig. 1 is a schematic diagram of an LED chip and a heat sink layer according to a first embodiment of the present invention.
Fig. 2 is a schematic view of a first embodiment of the present invention.
FIG. 3 is a flowchart of a die bonding method according to a first embodiment of the present invention.
Fig. 4 is a flowchart of a method for manufacturing a wiring portion in the first embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings. Referring to fig. 1 and 2, a first embodiment of the present invention is an LED package module including a substrate 101 and an LED chip 110; the substrate 101 is made of AlSi alloy material, wherein the content of Al is 30% -95%, and the content of Si is 5% -70%; the substrate 101 is provided with a fixed crystal plane 1011 and a wiring plane 1012, the fixed crystal plane 1011 is arranged in parallel with the wiring plane 1012, the height of the fixed crystal plane 1011 is lower than that of the wiring plane 1012, and a hyperreflection plane 1013 is arranged between the fixed crystal plane 1011 and the wiring plane 1012; a layer of reflective film 102 is arranged on the surfaces of the fixed crystal plane 1011, the wiring plane 1012 and the over-reflection plane 1013, and the film system structure of the reflective film 102 is Ni-Ag-Ni; the thicknesses of the Ni-Ag-Ni structure layers are respectively 2nm-10nm, 5nm-30nm and 2nm-10 nm; the wiring surface 1012 has a wiring portion constituting a circuit on the substrate 101, and the wiring portion is provided on a surface layer of the wiring surface 1012, as shown in fig. 1 and 2 againThe outer side of the reflective film 102; the circuit part has a layered structure and comprises a heat-conducting insulating adhesive layer 103 and a conductive plating layer 104 from inside to outside; the LED chip 110 is arranged on the solid crystal surface 1011, a heat sink layer 109 is further arranged between the solid crystal surface 1011 and the LED chip 110, the heat sink layer 109 is made of AuSn alloy, wherein the Au content is 4% -9%, the Sn content is 91% -96%, and the thickness of the heat sink layer is 0.005mm-0.02 mm; in this embodiment, the Au content in the AuSn alloy is 5%, the Sn content is 95%, and the thickness of the heat sink layer is 0.008 mm. The embodiment also discloses a method for manufacturing an LED package, which includes a die bonding process, and referring to fig. 3, the die bonding process includes the following steps: (1) arranging a heat sink layer, (2) placing an LED chip, (3) welding, and (4) cooling, wherein the heat sink layer arranged in the step (1) adopts a vacuum sputtering mode; the step (2) of placing the LED chip is to place the LED chip on the heat sink layer; the welding in the step (3) refers to passing the semi-finished product prepared in the step (2) through a welding furnace, wherein the temperature of the welding furnace is 250-300 ℃; and (4) cooling in the step (4) is normal-temperature wind cooling. The LED package module further includes a diffusion light-adding layer 111, the diffusion light-adding layer 111 is filled in a space defined by the solid crystal surface 1011 and the over-reflection surface 1013, the diffusion light-adding layer 111 is located on the heat sink layer 109 and encapsulates the LED chip 110 therein, and a top surface of the diffusion light-adding layer 111 is higher than a top surface of the LED chip 110; the diffusion and light enhancement layer 111 is a mixture of transparent silica gel and glass beads; the wiring surface 1012 further has an insulating portion, the wiring portion constituting a circuit on the substrate 101, the wiring portion and the insulating portion constituting a surface layer of the wiring surface 1012; the LED package module further includes a conversion layer 108, wherein the conversion layer 108 is disposed on the wiring surface 1012 and covers the circuit portion and the insulating portion; the energy conversion layer 108 is made of heat-conducting insulating glue and nano TiO2And nano SnO2In this example, nano TiO2And nano SnO2The proportions are equal, and as a variation of this embodiment, other proportions disclosed in the prior art may be used. In the present example, the radicalsThe SiAl alloy of the plate 101 has an Al content of 85% and an Si content of 15%. Referring to fig. 1 again, in the embodiment, the wiring surface 1012 is disposed on the top surface of the substrate 101, there are two over-reflection surfaces 1013, the two over-reflection surfaces 1013 are disposed on two sides of the fixed crystal plane 1011, and the fixed crystal plane 1011 and the two over-reflection surfaces 1013 form an elongated trench; the opening of the groove is large and the bottom is small; the two over-reflection surfaces 1013 are both planes and symmetrically arranged on two sides of the solid crystal plane 1011, an included angle between the two over-reflection surfaces 1013 is 75 ° to 105 °, and in this embodiment, an included angle between the two over-reflection surfaces 1013 is 90 °. In the embodiment, the thicknesses of the Ni-Ag-Ni structure layers are respectively 8nm, 15nm and 8 nm; the reflecting film is plated in a vacuum sputtering or vacuum evaporation mode, namely a layer of Ni is plated firstly, then a layer of Ag is plated, and finally a layer of Ni is plated. In this embodiment, the thermal conductive insulating adhesive layer 103 is made of epoxy resin and α -Al2O3Of course, as an alternative, it is also possible to use a mixture of polyimide and α -Al2O3The thickness of the thermal conductive and insulating adhesive layer 103 is 0.02mm to 0.06mm, which is 0.03mm in this embodiment. The conductive coating 104 is nano electro-deposited Cu with a thickness of 0.002mm-0.018mm, and the thickness of the nano electro-deposited Cu layer is 0.005mm in the embodiment; the conductive plating layer 104 further includes a vacuum plating bottom layer disposed at the bottom of the nano-electrodeposition Cu, the vacuum plating bottom layer is 5nm to 10nm of electrodeposited Ni, in this embodiment, the thickness of the vacuum plating bottom layer is 6nm, and the thickness of the vacuum plating bottom layer is very thin, which is not shown in fig. 1. Referring to fig. 4, a method for fabricating a circuit portion is briefly described, and the circuit portion fabricating process includes the steps of: (1) silk-screen printing heat-conducting insulating adhesive layer, (2) drying, (3) pasting protective film, (4) vacuum plating bottom, (5) nano-electrodeposition Cu, wherein, the thickness of the heat-conducting insulating adhesive layer in the step (1) is 0.03mm, the heat-conducting insulating adhesive layer is made of epoxy resin and alpha-Al2O3A mixture of (a); the drying in the step (2) is hot air drying, and the temperature adopted in the drying step is 180-200 ℃; the protective film in the step (3) is formed by bonding a PET film and silica gel; the vacuum bottom plating in the step (4) is carried out in a vacuum sputtering mode6nm of Ni; the nano electro-deposition of Cu in the step (5) is to deposit Cu with the thickness of 0.005mm in a vacuum sputtering or vacuum evaporation gold plating mode; the protective film may remain on the semifinished product and may be removed again when the energy conversion layer is provided. Of course, as an alternative to this embodiment, instead of AuSn alloy, AgSn alloy may be used, and the composition of AgSn may be: the content of Ag is 1% -25%, the content of Sn is 75% -99%, and the preferable components are: the content of Ag is 20%, the content of Sn is 80%, although the AgSn alloy can meet the requirements of die bonding and heat conduction, the use proportion and welding effect of noble metals are not as ideal as those of AuSn, but Ag is much more economical than Au, and the Ag alloy is easy to industrially popularize. In an embodiment, a first fluorescent layer is further disposed on the surface of the LED chip 110. In this embodiment, the module further includes a surface sealing layer 107, the surface sealing layer 107 is made of a mixture of transparent silica gel and phosphor, and the surface sealing layer 107 is disposed on the outer side of the diffusion and light-increasing layer 111, and the diffusion and light-increasing layer 111 is disposed to objectively play another role, that is, the thickness of the surface sealing layer 107 is reduced, so that the usage amount of the phosphor is saved.
Claims (9)
1. An LED packaging module comprises a substrate and an LED chip, and is characterized in that: the substrate is provided with a solid crystal face and a wiring face, wherein the solid crystal face and the wiring face are arranged in parallel, the height of the solid crystal face is lower than that of the wiring face, and a reflection transition face is arranged between the solid crystal face and the wiring face; the LED chip is arranged on the solid crystal face, a heat sink layer is arranged between the solid crystal face and the LED chip, the heat sink layer is made of AuSn alloy, the content of Au is 1% -10%, the content of Sn is 90% -99%, and the thickness of the heat sink layer is 0.001mm-0.05 mm.
2. The LED package module of claim 1, wherein: the AuSn alloy comprises 4-9% of Au, 91-96% of Sn and 0.005-0.02 mm of heat sink layer.
3. The LED package module of claim 1, wherein: AgSn alloy is used to replace AuSn alloy, and the content of Ag is 1% -25%, and the content of Sn is 75% -99%.
4. The LED package module according to any of the preceding claims, wherein: the surface of the LED chip is also provided with a fluorescent layer.
5. The LED package module of claim 1, wherein: the wiring surface is arranged on the top surface of the substrate, the number of the reflection transition surfaces is two, the two reflection transition surfaces are respectively arranged on two sides of the solid crystal surface, and the solid crystal surface and the reflection transition surfaces form a long-strip-shaped groove.
6. The LED package module of claim 5, wherein: the two reflection transition surfaces are both planes and are symmetrically arranged on two sides of the solid crystal surface.
7. The LED package module of claim 1, wherein: the AuSn alloy comprises the components of 6% of Au, 94% of Sn and 0.01mm of heat sink layer; the surface of the LED chip is also provided with a fluorescent layer; the wiring surface is arranged on the top surface of the substrate, the number of the reflection transition surfaces is two, the two reflection transition surfaces are respectively arranged on two sides of the solid crystal surface, and the solid crystal surface and the reflection transition surfaces form a long-strip-shaped groove; the two reflection transition surfaces are both planes and are symmetrically arranged on two sides of the solid crystal surface.
8. The LED package module of claim 1, wherein: replacing AuSn alloy with AgSn alloy, wherein the content of Ag is 9%, and the content of Sn is 91%; the thickness of the heat sink layer is 0.01 mm; the surface of the LED chip is also provided with a fluorescent layer; the wiring surface is arranged on the top surface of the substrate, the number of the reflection transition surfaces is two, the two reflection transition surfaces are respectively arranged on two sides of the solid crystal surface, and the solid crystal surface and the reflection transition surfaces form a long-strip-shaped groove; the two reflection transition surfaces are both planes and are symmetrically arranged on two sides of the solid crystal surface.
9. A preparation method of an LED packaging module is used for manufacturing the LED packaging module of claim 1, and the method comprises a die bonding process, and is characterized in that the die bonding process comprises the following steps:
(1) a heat sink layer is provided which,
(2) the LED chip is placed on the base plate,
(3) the welding is carried out, and the welding,
(4) the mixture is cooled down and then is cooled down,
wherein,
the heat sink layer is arranged in the step (1) by adopting a vacuum sputtering mode; the heat sink layer is made of AuSn alloy, wherein the content of Au is 4% -9%, the content of Sn is 91% -96%, and the thickness of the heat sink layer is 0.005mm-0.02 mm;
the step (2) of placing the LED chip is to place the LED chip on the heat sink layer;
the welding in the step (3) is to pass the semi-finished product prepared in the step (2) through a welding furnace, wherein the temperature of the welding furnace is 250-300 ℃;
and (4) cooling in the step (4) is normal-temperature wind cooling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101087355A CN101691910B (en) | 2009-07-10 | 2009-07-10 | LED packaging module and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101087355A CN101691910B (en) | 2009-07-10 | 2009-07-10 | LED packaging module and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101691910A CN101691910A (en) | 2010-04-07 |
| CN101691910B true CN101691910B (en) | 2011-12-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2009101087355A Expired - Fee Related CN101691910B (en) | 2009-07-10 | 2009-07-10 | LED packaging module and preparation method thereof |
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| Country | Link |
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| CN (1) | CN101691910B (en) |
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