CN101684899B - LED package module - Google Patents
LED package module Download PDFInfo
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- CN101684899B CN101684899B CN2009101087374A CN200910108737A CN101684899B CN 101684899 B CN101684899 B CN 101684899B CN 2009101087374 A CN2009101087374 A CN 2009101087374A CN 200910108737 A CN200910108737 A CN 200910108737A CN 101684899 B CN101684899 B CN 101684899B
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- solid crystal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Abstract
The invention relates to a lighting LED package, which comprises a substrate and an LED chip, wherein the substrate is provided with a die bonding surface and a wiring surface. The package is characterized in that: the wiring surface is provided with a circuit part and an insulating part, wherein the circuit part forms a circuit on the substrate; the circuit part and the insulating part form a surface layer of the wiring surface; and the LED chip is arranged on the die bonding surface. The LED package module also comprises an energy transduction layer, wherein the energy transduction layer is arranged on the wiring surface and covers a part outside the wiring part and the insulating part; and the energy transduction layer consists of a mixture of heat-conductive insulating glue TiO2 and nanometer SnO2. The invention provides the LED package module with high positive heat dissipation efficiency.
Description
Technical field
The present invention relates to LED package used for illuminating.
Background technology
Compare with conventional illuminator, the LED street lamp not only has the characteristics that colourity is good, non-maintaining, the life-span is long, the more important thing is more energy-conservation than conventional road lamp.
Chinese invention patent document CN101101103, CN101101102, CN101101107 disclose a kind of LED street lamp respectively, and its heat dispersion has reached utility grade.Above-mentioned three kinds of LED street lamps have been represented the main flow of LED lighting technology on the market, comprise tunnel lamp, indoor illumination, and its core technology and the disclosed content of above-mentioned patent documentation are very approximate.Above-mentioned technology is all by an aluminium base with printed circuit, a plurality of single LED bulbs are set on aluminium base, be close to a radiator at the back of aluminium base then, the reverse side of radiator is provided with the heat radiation wing, above-mentioned technology has also adopted secondary optical lens or reflector to carry out secondary optics and has handled, with the control hot spot.
Yet above-mentioned prior art still has deficiency, has restricted applying of LED lighting technology.Above-mentioned prior art radiating effect is still not very good, and existing LED lighting device, its heat dissipating method all are positive luminous, the reverse side heat radiation; Existing LED bulb, the exiting surface of its led chip forward, substrate surface backwards, and substrate all adopts the low materials of thermal conductivity such as sapphire, main heat from the front or the side shed, this and LED lighting device reverse side heat radiation formation contradiction, consequently most of heat is stranded in the LED bulb, can not in time dissipate, easily cause LED lighting device fault.
Summary of the invention
The objective of the invention is to overcome above-mentioned the deficiencies in the prior art part, and provide a kind of front radiating efficiency high LED package module.
Purpose of the present invention can be achieved through the following technical solutions: the LED package module, comprise substrate and led chip, this substrate has solid crystal face and wiring side, it is characterized in that: described wiring mask has circuit pack and insulated part, described circuit pack constitutes the circuit on the described substrate, and described circuit pack and described insulated part constitute the top layer of described wiring side; Described led chip is arranged at described solid crystal face; This LED package module also comprises the transducing layer, and described transducing layer is arranged at described wiring side and is covered in described circuit pack and the surface of insulation division branch; Described transducing layer is made up of the mixture of thermal conductive insulation glue and nano TiO 2 and nano SnO 2.
The LED package module is characterized in that: described solid crystal face and described wiring side be arranged in parallel, in described wiring side, are provided with the reflection transition face between described solid crystal face and the described wiring side at the bottom of the height of described solid crystal face.
The LED package module, it is characterized in that: described wiring side is arranged at the end face of described substrate, described returning penetrated transition face and had two, and two reflection transition faces are separately positioned on two sides of described solid crystal face, and described solid crystal face and described reflection transition face are formed the groove of a strip.
The LED package module is characterized in that: described two reflection transition faces are the plane, are arranged at two sides of described solid crystal face symmetrically.
The LED package module is characterized in that: described two reflection transition faces are cambered surface, and the concave surface of two cambered surfaces is provided with in opposite directions, are arranged at two sides of described solid crystal face symmetrically.
The LED package module, it is characterized in that: described wiring side is arranged at the end face of described substrate, described solid crystal face and described reflection transition face constitute the big taper hole of the little opening in a bottom, and described solid crystal face is the bottom surface of described taper hole, and described reflection transition face is the sidewall of described taper hole.
The LED package module is characterized in that: described solid crystal face, described wiring side, described reflection transition face surface all have one deck reflectance coating, and the film structure of described reflectance coating is Ni-Ag-Ni; The thickness of described each layer of Ni-Ag-Ni structure is respectively 8nm, 15nm, 8nm; Described reflectance coating plates by vacuum sputtering or vacuum evaporation mode and establishes, and promptly plates layer of Ni earlier, plates one deck Ag again, plates layer of Ni at last again.
The LED package module is characterized in that: described solid crystal face and described wiring side be arranged in parallel, in described wiring side, are provided with the reflection transition face between described solid crystal face and the described wiring side at the bottom of the height of described solid crystal face; Described wiring side is arranged at the end face of described substrate, and described returning penetrated transition face and had two, and two reflection transition faces are separately positioned on two sides of described solid crystal face, and described solid crystal face and described reflection transition face are formed the groove of a strip; Described two reflection transition faces are the plane, are arranged at two sides of described solid crystal face symmetrically; Described solid crystal face, described wiring side, described reflection transition face surface all have one deck reflectance coating, and the film structure of described reflectance coating is Ni-Ag-Ni; The thickness of described each layer of Ni-Ag-Ni structure is respectively 8nm, 15nm, 8nm; Described reflectance coating plates by vacuum sputtering or vacuum evaporation mode and establishes, and promptly plates layer of Ni earlier, plates one deck Ag again, plates layer of Ni at last again.
LED package module of the present invention, this LED package module also comprises the transducing layer, described transducing layer is arranged at described wiring side and is covered in outside described circuit pack and the insulated part; Described transducing layer is the mixture of thermal conductive insulation glue and nano TiO 2 and nano SnO 2.Nano TiO 2 and nano SnO 2 infrared emission thermal radiation effects own are prior aries, at non-emphasis of the present invention.LED package module of the present invention is introduced the notion of positive infrared heat radiation, because of existing led chip Sapphire Substrate all is arranged on reflective, so exiting surface discharges a large amount of heat energy with conduction pattern, transducing layer of the present invention is in printing opacity, have the effect that becomes infrared waves to fall thermal power transfer, thereby alleviated the heat radiation pressure of LED lighting device reverse side greatly to head-on radiation.LED package module of the present invention, because have the transducing layer of infrared positive heat radiation, compared with prior art, radiating effect is better.
Description of drawings
Fig. 1 is the schematic diagram of the transducing layer of first embodiment of the invention.
Fig. 2 is the schematic diagram of first embodiment of the invention.
Fig. 3 is a die-bonding method flow chart in the first embodiment of the invention.
Fig. 4 is a circuit pack preparation method flow chart in the first embodiment of the invention.
Embodiment
The invention will be further described below in conjunction with accompanying drawing.With reference to figure 1, Fig. 2, first embodiment of the invention is a kind of LED package module, comprises substrate 101 and led chip 110; This substrate 101 is the AlSi alloy material, and wherein, the content of Al is 30%-95%, and the content of Si is 5%-70%; Substrate 101 has solid crystal face 1011 and wiring side 1012, described solid crystal face 1011 be arranged in parallel with described wiring side 1012, in described wiring side 1012, be provided with reflection transition face 1013 between described solid crystal face 1011 and the described wiring side 1012 at the bottom of the height of described solid crystal face 1011; Described solid crystal face 1011, described wiring side 1012, described reflection transition face 1013 surfaces all are provided with one deck reflectance coating 102, and the film structure of described reflectance coating 102 is Ni-Ag-Ni; The thickness of described each layer of Ni-Ag-Ni structure is respectively 2nm-10nm, 5nm-30nm, 2nm-10nm; Described wiring side 1012 has circuit pack, and described circuit pack constitutes the circuit on the described substrate 101, and described circuit pack is arranged at the top layer of described wiring side 1012, refers again to Fig. 1, Fig. 2, the outside of promptly described reflectance coating 102; Described circuit pack has layer structure, and from inside to outside, described circuit pack comprises heat conductive insulating glue-line 103, conductive coating 104; Described led chip 110 is arranged at described solid crystal face 1011, also has a heat-sink shell 109 between described solid crystal face 1011 and the described led chip 110, the material of described heat-sink shell 109 is the AuSn alloy, wherein Au content is 4%-9%, the content of Sn is 91%-96%, and the thickness of described heat-sink shell is 0.005mm-0.02mm; In the present embodiment, Au content is 5% in the described AuSn alloy, and the content of Sn is 95%, and the thickness of described heat-sink shell is 0.008mm.Following brief description is die-bonding method once, and with reference to figure 3, Gu brilliant operation may further comprise the steps: (1) is provided with heat-sink shell, and (2) place led chip, (3) welding, and (4) cooling, wherein, the described mode that heat-sink shell employing vacuum sputtering is set of (1) step; (2) step, described placement led chip was that led chip is placed on the heat-sink shell; (3) goes on foot described welding, is meant that going on foot the semi-finished product made from (2) crosses soldering furnace, and the temperature of soldering furnace is 250 ℃-300 ℃; (4) described cooling of step is meant the normal temperature air cooling.This LED package module also comprises diffusion lustre adding layer 111, described diffusion lustre adding layer 111 is filled in described solid crystal face 1011 and defines in the space that forms with described reflection transition face 1013, described diffusion lustre adding layer 111 is positioned on the described heat-sink shell 109 and with described led chip 110 and is coated on wherein, and the end face of described diffusion lustre adding layer 111 is higher than the end face of described led chip 110; Described diffusion lustre adding layer 111 is mixtures of transparent silica gel and glass microballoon; Described wiring side 1012 also has insulated part, and described circuit pack constitutes the circuit on the described substrate 101, and described circuit pack and described insulated part constitute the top layer of described wiring side 1012; This LED package module also comprises transducing layer 108, and described transducing layer 108 is arranged at described wiring side 1012 and is covered in described circuit pack and the surface of insulation division branch; Described transducing layer 108 is mixtures of thermal conductive insulation glue and nano TiO 2 and nano SnO 2, in the present embodiment, nano TiO 2 and nano SnO 2 are equal proportion proportionings, as a kind of conversion scheme of present embodiment, also can adopt disclosed other ratio in the prior art certainly.In the present embodiment, the content of Al is 85% in the SiAl alloy of described substrate 101, and the content of Si is 15%.Refer again to Fig. 1, Fig. 2, in the present embodiment, described wiring side 1012 is arranged at the end face of described substrate 101, described returning penetrated transition face 1013 and had two, two reflection transition faces 1013 are separately positioned on two sides of described solid crystal face 1011, and described solid crystal face 1011 and described two reflection transition faces 1013 are formed the groove of a strip; The big bottom of described groove opening is little; Two reflection transition faces 1013 are the plane, are arranged at two sides of described solid crystal face 1011 symmetrically, and the angle of two reflection transition faces 1013 is 75 °-105 °, and in the present embodiment, the angle of two reflectings surface 1013 is 90 °.In the present embodiment, the thickness of described each layer of Ni-Ag-Ni structure is respectively 8nm, 15nm, 8nm; Described reflectance coating plates by vacuum sputtering or vacuum evaporation mode and establishes, and promptly plates layer of Ni earlier, plates one deck Ag again, plates layer of Ni at last again.In the present embodiment, the material of described heat conductive insulating glue-line 103 is the mixture of epoxy resin and α-Al2O3, certainly, as a kind of replacement scheme, also can adopt the mixture of polyimides and α-Al2O3, the thickness of described heat conductive insulating glue-line 103 is 0.02mm-0.06mm, is 0.03mm in the present embodiment.The nanometer electro-deposition Cu that described conductive coating 104 is a 0.002mm-0.018mm thickness, the layer thickness of nanometer electro-deposition Cu is 0.005mm in the present embodiment; Described conductive coating 104 comprises that also one is arranged on the vacuum plating bottom of described nanometer electro-deposition Cu bottom, described vacuum plating bottom is the deposit N i of 5nm-10nm, and in the present embodiment, the thickness at the vacuum plating end is 6nm, because of the very thin thickness of vacuum plating bottom, not shown among Fig. 2.The manufacture method of following brief description circuit pack, with reference to figure 4, described circuit pack production process may further comprise the steps: (1) silk-screen heat conductive insulating glue-line, (2) oven dry, (3) pasting protective film, (4) vacuum plating end, (5) nanometer electro-deposition Cu, wherein, (1) the step thickness of described heat conductive insulating glue-line is 0.03mm, and the material of described heat conductive insulating glue-line is the mixture of epoxy resin and α-Al2O3; (2) described oven dry of step is a hot-air seasoning, and the temperature that this baking step adopts is 180 ℃-200 ℃; (3) goes on foot described diaphragm, is that the PET film adds the silica gel bonding; (4) step, described vacuum was plated the end, was the Ni that deposits 6nm in the vacuum sputtering mode; Described nanometer electro-deposition Cu of (5) step is the Cu that deposits 0.005mm thickness with vacuum sputtering or vacuum evaporation gold mode; Described diaphragm can be retained on the semi-finished product, removes to get final product when described transducing layer is set again.Certainly, a kind of replacement scheme as present embodiment, can replace the AuSn alloy with the AgSn alloy, and the component of this AgSn can be: the content of Ag is 1%-25%, and the content of Sn is 75%-99%, preferred component is: the content of Ag is 20%, the content of Sn is 80%, though the AgSn alloy can be realized solid brilliant and heat conduction requirement, ratio that its noble metal uses and welding effect are all not as the AuSn ideal, but Ag than Au economy many, be easy to Industry Promotion.Among the embodiment, described led chip 110 surfaces also are provided with a fluorescence coating.In the present embodiment, this module also comprises surperficial adhesive layer 107, the material of surface adhesive layer 107 is the mixture of transparent silica gel and fluorescent material, surface adhesive layer 107 is arranged at the outside of described diffusion lustre adding layer 111, because be provided with diffusion lustre adding layer 111, objectively also play the another one effect, that is exactly the thickness that has reduced surperficial adhesive layer 107, thereby has saved the use amount of fluorescent material.
Claims (8)
1. LED package module, comprise substrate and led chip, this substrate has solid crystal face and wiring side, it is characterized in that: described wiring mask has circuit pack and insulated part, described circuit pack constitutes the circuit on the described substrate, and described circuit pack and described insulated part constitute the top layer of described wiring side; Described led chip is arranged at described solid crystal face; This LED package module also comprises the transducing layer, and described transducing layer is arranged at described wiring side and is covered in described circuit pack and the surface of insulation division branch; Described transducing layer is made up of the mixture of thermal conductive insulation glue and nano TiO 2 and nano SnO 2.
2. LED package module according to claim 1 is characterized in that: described solid crystal face and described wiring side be arranged in parallel, in described wiring side, are provided with the reflection transition face between described solid crystal face and the described wiring side at the bottom of the height of described solid crystal face.
3. LED package module according to claim 2, it is characterized in that: described wiring side is arranged at the end face of described substrate, described reflection transition face has two, two reflection transition faces are separately positioned on two sides of described solid crystal face, and described solid crystal face and described reflection transition face are formed the groove of a strip.
4. LED package module according to claim 3 is characterized in that: described two reflection transition faces are the plane, are arranged at two sides of described solid crystal face symmetrically.
5. LED package module according to claim 3 is characterized in that: described two reflection transition faces are cambered surface, and the concave surface of two cambered surfaces is provided with in opposite directions, are arranged at two sides of described solid crystal face symmetrically.
6. LED package module according to claim 2, it is characterized in that: described wiring side is arranged at the end face of described substrate, described solid crystal face and described reflection transition face constitute the big taper hole of the little opening in a bottom, described solid crystal face is the bottom surface of described taper hole, and described reflection transition face is the sidewall of described taper hole.
7. LED package module according to claim 2 is characterized in that: described solid crystal face, described wiring side, described reflection transition face surface all have one deck reflectance coating, and the film structure of described reflectance coating is Ni-Ag-Ni; The thickness of described each layer of Ni-Ag-Ni structure is respectively 8nm, 15nm, 8nm; Described reflectance coating plates by vacuum sputtering or vacuum evaporation mode and establishes, and promptly plates layer of Ni earlier, plates one deck Ag again, plates layer of Ni at last again.
8. LED package module according to claim 1 is characterized in that: described solid crystal face and described wiring side be arranged in parallel, in described wiring side, are provided with the reflection transition face between described solid crystal face and the described wiring side at the bottom of the height of described solid crystal face; Described wiring side is arranged at the end face of described substrate, and described reflection transition face has two, and two reflection transition faces are separately positioned on two sides of described solid crystal face, and described solid crystal face and described reflection transition face are formed the groove of a strip; Described two reflection transition faces are the plane, are arranged at two sides of described solid crystal face symmetrically; Described solid crystal face, described wiring side, described reflection transition face surface all have one deck reflectance coating, and the film structure of described reflectance coating is that the thickness of each layer of the described Ni-Ag-Ni structure of Ni-Ag-Ni is respectively 8nm, 15nm, 8nm; Described reflectance coating plates by vacuum sputtering or vacuum evaporation mode and establishes, and promptly plates layer of Ni earlier, plates one deck Ag again, plates layer of Ni at last again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101087374A CN101684899B (en) | 2009-07-10 | 2009-07-10 | LED package module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101087374A CN101684899B (en) | 2009-07-10 | 2009-07-10 | LED package module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101684899A CN101684899A (en) | 2010-03-31 |
| CN101684899B true CN101684899B (en) | 2011-01-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101087374A Expired - Fee Related CN101684899B (en) | 2009-07-10 | 2009-07-10 | LED package module |
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| Country | Link |
|---|---|
| CN (1) | CN101684899B (en) |
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- 2009-07-10 CN CN2009101087374A patent/CN101684899B/en not_active Expired - Fee Related
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| CN101684899A (en) | 2010-03-31 |
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