CN101691907A - Led packaging module - Google Patents
Led packaging module Download PDFInfo
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- CN101691907A CN101691907A CN200910108732A CN200910108732A CN101691907A CN 101691907 A CN101691907 A CN 101691907A CN 200910108732 A CN200910108732 A CN 200910108732A CN 200910108732 A CN200910108732 A CN 200910108732A CN 101691907 A CN101691907 A CN 101691907A
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Abstract
The invention relates to LED package used for illuminating. An LED packaging module comprises a substrate and is characterized in that the substrate is made of AlSi alloy materials, wherein, the content of Al is 30-95% and the content of Si is 5-70%. The thermal expansion coefficient of the substrate material of the LED packaging module is matched with that of the circuit material.
Description
Technical field
The present invention relates to LED package used for illuminating.
Background technology
Compare with conventional illuminator, the LED street lamp not only has the characteristics that colourity is good, non-maintaining, the life-span is long, the more important thing is more energy-conservation than conventional road lamp.
Chinese invention patent document CN101101103A discloses a kind of LED street lamp on January 9th, 2008, comprises lamp body and LED bulb, and lamp body comprises head section, stage casing, rear, and the head section is docked setting with the stage casing, and the other end in stage casing docks setting with rear; Be provided with sealing gasket between head section and the stage casing, the head section is connected with the stage casing by securing member; Be provided with sealing gasket between rear and the stage casing, rear is connected with the stage casing by securing member; The stage casing is a kind of section bar, and along the profile length direction, diverse location has identical cross section.Chinese invention patent document CN101101102A also discloses a kind of LED street lamp on January 9th, 2008, comprise lamp body and LED bulb, lamp body comprises head section, stage casing, rear, the head section is docked setting with the stage casing, the other end in stage casing docks setting with rear, be provided with sealing gasket between head section and the stage casing, the head section is connected with the stage casing by securing member; Be provided with sealing gasket between rear and the stage casing, rear is connected with the stage casing by securing member; The stage casing is a segment type material, and along the profile length direction, diverse location has identical cross section, and section bar has substrate, and substrate is by two connecting plate formations that are the dull and stereotyped of " eight " font setting and connect two flat boards.Chinese invention patent document CN101101107A also discloses a kind of LED street lamp on January 9th, 2008, comprise lamp body and LED bulb, lamp body has obverse and reverse, the front of lamp body has a cavity that is defined by side plate and bottom surface, the reverse side of lamp body is provided with the heat radiation wing, and an end of lamp body reverse side also is provided with light pole bindiny mechanism; Have a plane at the bottom of the cavity, also be provided with a dividing plate in the cavity, dividing plate is near an end at light pole bindiny mechanism place, and dividing plate is defined as two parts with cavity, near light pole bindiny mechanism at one end secondary cavity and the main cavity that is positioned at the dividing plate opposite side; Be provided with the gap that makes main cavity and secondary cavity intercommunication between dividing plate two ends and the cavity wall.Above-mentioned three kinds of LED street lamps have been represented the main flow of LED lighting engineering on the market, comprise tunnel lamp, indoor illumination, and its core technology and the disclosed content of above-mentioned patent documentation are very approximate.Above-mentioned technology is all by an aluminium base with printed circuit, a plurality of single LED bulbs are set on aluminium base, be close to a radiator at the back of aluminium base then, the reverse side of radiator is provided with the heat radiation wing, above-mentioned technology has also adopted secondary optical lens or reflector to carry out secondary optics and has handled, with the control hot spot.
Yet above-mentioned prior art still has deficiency, has restricted applying of LED lighting engineering.The aluminium base that above-mentioned technology adopts is common on the market aluminum or aluminum alloy material, and the poor processability of aluminium material can increase the manufacturing cost of lighting device; Though the thermal conductivity of aluminum or aluminum alloy can be accepted, but its thermal coefficient of expansion up to 23*10-6/K about (0-100 ℃), differ more than 30% with the thermal coefficient of expansion of printed circuit materials, LED bulb electrode, do not meet the matched coefficients of thermal expansion principle, above LED states lighting device when reality is used, printed circuit aliquation or fracture can take place, and can cause that LED bulb solder joint comes off or the broken string of the chips welding gold thread that the LED bulb is interior, thus initiation LED lighting device fault.
Summary of the invention
The objective of the invention is to overcome above-mentioned the deficiencies in the prior art part, and provide a kind of baseplate material and circuit material to close the LED package module that thermal coefficient of expansion is complementary.
Purpose of the present invention can be achieved through the following technical solutions:
A kind of LED package module comprises substrate, it is characterized in that: this substrate is the AlSi alloy material, and wherein, the content of Al is 30%-95%, and the content of Si is 5%-70%.
The LED package module is characterized in that: the content of described substrate Al is 50%-95%, and the content of Si is 5%-50%.
The LED package module is characterized in that: the content of described substrate Al is 60%-90%, and the content of Si is 10%-40%.
The LED package module is characterized in that: described substrate has solid crystal face and wiring side, and described solid crystal face and described wiring side be arranged in parallel, in described wiring side, is provided with the excessive face of reflection between described solid crystal face and the described wiring side at the bottom of the height of described solid crystal face.
The LED package module, it is characterized in that: described wiring side is arranged at the end face of described substrate, described returning penetrated excessive face and had two, and two excessive faces of reflection are separately positioned on two sides of described solid crystal face, and described solid crystal face and the excessive face of described reflection are formed the groove of a strip.
The LED package module is characterized in that: described two excessive faces of reflection are the plane, are arranged at two sides of described solid crystal face symmetrically.
The LED package module is characterized in that: described two excessive faces of reflection are cambered surface, and the concave surface of two cambered surfaces is provided with in opposite directions, is arranged at two sides of described solid crystal face symmetrically.
The LED package module, it is characterized in that: described wiring side is arranged at the end face of described substrate, described solid crystal face and the excessive face of described reflection constitute the big taper hole of an end osculum, and described solid crystal face is the bottom surface of described taper hole, and the excessive face of described reflection is the sidewall of described taper hole.
The LED package module is characterized in that: the content of described substrate Al is 85%, and the content of Si is 15%; Described substrate has solid crystal face and wiring side, and described solid crystal face and described wiring side be arranged in parallel, in described wiring side, is provided with the excessive face of reflection between described solid crystal face and the described wiring side at the bottom of the height of described solid crystal face; Described wiring side is arranged at the end face of described substrate, and described returning penetrated excessive face and had two, and two excessive faces of reflection are separately positioned on two sides of described solid crystal face, and described solid crystal face and the excessive face of described reflection are formed the groove of a strip; Described two excessive faces of reflection are the plane, are arranged at two sides of described solid crystal face symmetrically.
The LED package module is characterized in that: the content of described substrate Al is 85%, and the content of Si is 15%; Described substrate has solid crystal face and wiring side, and described solid crystal face and described wiring side be arranged in parallel, in described wiring side, is provided with the excessive face of reflection between described solid crystal face and the described wiring side at the bottom of the height of described solid crystal face; Described wiring side is arranged at the end face of described substrate, and described solid crystal face and the excessive face of described reflection constitute the big taper hole of an end osculum, and described solid crystal face is the bottom surface of described taper hole, and the excessive face of described reflection is the sidewall of described taper hole.
LED package module of the present invention, substrate are the AlSi alloy material, and wherein, the content of Al is 30%-95%, and the content of Si is 5%-70%; Described substrate has solid crystal face and wiring side, and described wiring mask has circuit pack, and described circuit pack constitutes the circuit on the described substrate, and described circuit pack is arranged at the top layer of described wiring side; Described circuit pack has layer structure, and from inside to outside, described circuit pack comprises heat conductive insulating glue-line, conductive coating; Described led chip is arranged at described solid crystal face, also have a heat-sink shell between described solid crystal face and the described led chip, the material of described heat-sink shell is the AuSn alloy, and wherein Au content is 4%-9%, the content of Sn is 91%-96%, and the thickness of described heat-sink shell is 0.005mm-0.02mm; According to the matched coefficients of thermal expansion principle, baseplate material and circuit material close thermal coefficient of expansion and differ 7% following LED lighting device and just have higher reliability, at least to reach 10% following LED lighting device and just have practical value, the SiAl alloy has the good characteristics of thermal conductivity, the poorest situation of the content of Si thermal conductivity when the 5%-70% scope is also greater than 120w/m.k, and in this scope, the thermal coefficient of expansion of SiAl changes not obvious, the content of Si is 70% o'clock, and the thermal coefficient of expansion of this alloy has only 7*10
-6About/K, with circuit bottom insulating materials and aforementioned solid brilliant heat sink material thermal coefficient of expansion be more or less the same, meet the requirement of matched coefficients of thermal expansion principle.Compared with prior art, LED package module baseplate material of the present invention and circuit material close thermal coefficient of expansion and are complementary, and the LED lighting device of making has the low characteristics of fault rate.
Description of drawings
Fig. 1 is the schematic diagram of first embodiment of the invention.
Fig. 2 is a die-bonding method flow chart in the first embodiment of the invention.
Fig. 3 is a circuit pack preparation method flow chart in the first embodiment of the invention.
Fig. 4 is the schematic diagram of the substrate of second embodiment of the invention.
The specific embodiment
The invention will be further described below in conjunction with accompanying drawing.With reference to figure 1, first embodiment of the invention is a kind of LED package module, comprises substrate 101 and led chip 110; This substrate 101 is the AlSi alloy material, and wherein, the content of Al is 30%-95%, and the content of Si is 5%-70%; Described substrate 101 has solid crystal face 1011 and wiring side 1012, described solid crystal face 1011 be arranged in parallel with described wiring side 1012, in described wiring side 1012, be provided with the excessive face 1013 of reflection between described solid crystal face 1011 and the described wiring side 1012 at the bottom of the height of described solid crystal face 1011; Described solid crystal face 1011, described wiring side 1012, the excessive face of described reflection 1013 surfaces all are provided with one deck reflectance coating 102, and the film structure of described reflectance coating 102 is Ni-Ag-Ni; The thickness of described each layer of Ni-Ag-Ni structure is respectively 2nm-10nm, 5nm-30nm, 2nm-10nm; Described wiring side 1012 has circuit pack, and described circuit pack constitutes the circuit on the described substrate 101, and described circuit pack is arranged at the top layer of described wiring side 1012, refers again to Fig. 1, the outside of promptly described reflectance coating 102; Described circuit pack has layer structure, and from inside to outside, described circuit pack comprises heat conductive insulating glue-line 103, conductive coating 104; Described led chip 110 is arranged at described solid crystal face 1011, also has a heat-sink shell 109 between described solid crystal face 1011 and the described led chip 110, the material of described heat-sink shell 109 is the AuSn alloy, wherein Au content is 4%-9%, the content of Sn is 91%-96%, and the thickness of described heat-sink shell is 0.005mm-0.02mm; In the present embodiment, Au content is 5% in the described AuSn alloy, and the content of Sn is 95%, and the thickness of described heat-sink shell is 0.008mm.Briefly explain die-bonding method below, with reference to figure 2, Gu brilliant operation may further comprise the steps: (1) is provided with heat-sink shell, and (2) place led chip, (3) welding, and (4) cooling, wherein, the described mode that heat-sink shell employing vacuum sputtering is set of (1) step; (2) step, described placement led chip was that led chip is placed on the heat-sink shell; (3) goes on foot described welding, is meant that going on foot the semi-finished product made from (2) crosses soldering furnace, and the temperature of soldering furnace is 250 ℃-300 ℃; (4) described cooling of step is meant the normal temperature air cooling.This LED package module also comprises diffusion lustre adding layer 111, described diffusion lustre adding layer 111 is filled in described solid crystal face 1011 and defines in the space that forms with the excessive face 1013 of described reflection, described diffusion lustre adding layer 111 is positioned on the described heat-sink shell 109 and with described led chip 110 and is coated on wherein, and the end face of described diffusion lustre adding layer 111 is higher than the end face of described led chip 110; Described diffusion lustre adding layer 111 is mixtures of transparent silica gel and glass microballoon; Described wiring side 1012 also has insulated part, and described circuit pack constitutes the circuit on the described substrate 101, and described circuit pack and described insulated part constitute the top layer of described wiring side 1012; This LED package module also comprises transducing layer 108, and described transducing layer 108 is arranged at described wiring side 1012 and is covered in outside described circuit pack and the insulated part; Described transducing layer 108 is thermal conductive insulation glue and nano-TiO
2And nano SnO
2Mixture, in the present embodiment, nano-TiO
2And nano SnO
2Be the equal proportion proportioning, as a kind of conversion scheme of present embodiment, also can adopt disclosed other ratio in the prior art certainly.In the present embodiment, the content of Al is 85% in the SiAl alloy of described substrate 101, and the content of Si is 15%.Refer again to Fig. 1, in the present embodiment, described wiring side 1012 is arranged at the end face of described substrate 101, described returning penetrated excessive face 1013 and had two, two excessive faces 1013 of reflection are separately positioned on two sides of described solid crystal face 1011, and described solid crystal face 1011 reflects the groove that excessive face 1013 is formed a strip with described two; The big bottom of described groove opening is little; Two excessive faces 1013 of reflection are the plane, are arranged at two sides of described solid crystal face 1011 symmetrically, and the angle of two excessive faces 1013 of reflection is 75 °-105 °, and in the present embodiment, the angle of two reflectings surface 1013 is 90 °.In the present embodiment, the thickness of described each layer of Ni-Ag-Ni structure is respectively 8nm, 15nm, 8nm; Described reflectance coating plates by vacuum sputtering or vacuum evaporation mode and establishes, and promptly plates layer of Ni earlier, plates one deck Ag again, plates layer of Ni at last again.In the present embodiment, the material of described heat conductive insulating glue-line 103 is epoxy resin and α-Al
2O
3Mixture, certainly,, also can adopt polyimides and α-Al as a kind of replacement scheme
2O
3Mixture, the thickness of described heat conductive insulating glue-line 103 is 0.02mm-0.06mm, is 0.03mm in the present embodiment.The nanometer electro-deposition Cu that described conductive coating 104 is a 0.002mm-0.018mm thickness, the layer thickness of nanometer electro-deposition Cu is 0.005mm in the present embodiment; Described conductive coating 104 comprises that also one is arranged on the vacuum plating bottom of described nanometer electro-deposition Cu bottom, described vacuum plating bottom is the deposit N i of 5nm-10nm, and in the present embodiment, the thickness at the vacuum plating end is 6nm, because of the very thin thickness of vacuum plating bottom, not shown among Fig. 1.Briefly explain the preparation method of circuit pack below; with reference to figure 3; described circuit pack production process may further comprise the steps: (1) silk-screen heat conductive insulating glue-line; (2) oven dry, (3) pasting protective film, (4) vacuum plating end; (5) nanometer electro-deposition Cu; wherein, (1) the step thickness of described heat conductive insulating glue-line is 0.03mm, and the material of described heat conductive insulating glue-line is epoxy resin and α-Al
2O
3Mixture; (2) described oven dry of step is a hot-air seasoning, and the temperature that this baking step adopts is 180 ℃-200 ℃; (3) goes on foot described diaphragm, is that the PET film adds the silica gel bonding; (4) step, described vacuum was plated the end, was the Ni that deposits 6nm in the vacuum sputtering mode; Described nanometer electro-deposition Cu of (5) step is the Cu that deposits 0.005mm thickness with vacuum sputtering or vacuum evaporation gold mode; Described diaphragm can be retained on the semi-finished product, removes to get final product when described transducing layer is set again.Certainly, a kind of replacement scheme as present embodiment, can replace the AuSn alloy with the AgSn alloy, and the component of this AgSn can be: the content of Ag is 1%-25%, and the content of Sn is 75%-99%, preferred component is: the content of Ag is 20%, the content of Sn is 80%, though the AgSn alloy can be realized solid brilliant and heat conduction requirement, ratio that its noble metal uses and welding effect are all not as the AuSn ideal, but Ag than Au economy many, be easy to Industry Promotion.Described led chip 110 surfaces also are provided with fluorescence coating 106.In the present embodiment, this module also comprises surperficial adhesive layer 107, the material of described surperficial adhesive layer 107 is the mixture of transparent silica gel and fluorescent material, described surperficial adhesive layer 107 is arranged at the outside of described diffusion lustre adding layer 111, because be provided with diffusion lustre adding layer 111, objectively also play the another one effect, that is exactly the thickness that has reduced surperficial adhesive layer 107, thereby has saved the use amount of fluorescent material.
Second embodiment of the invention also is a kind of LED package module, be with the difference of first embodiment of the invention, the structure difference of substrate, with reference to figure 2, LED package module substrate comprises solid crystal face 201, wiring side 202 and reflects excessive face 203 that wiring side 202 is arranged at the end face of described substrate, described solid crystal face 201 and the big taper hole of excessive face 203 formation one end osculums of described reflection, described solid crystal face 201 is bottom surfaces of described taper hole, the sidewall that the excessive face 203 of described reflection is described taper holes.
Claims (10)
1. a LED package module comprises substrate, it is characterized in that: this substrate is the AlSi alloy material, and wherein, the content of Al is 30%-95%, and the content of Si is 5%-70%.
2. LED package module according to claim 1 is characterized in that: the content of described substrate Al is 50%-95%, and the content of Si is 5%-50%.
3. LED package module according to claim 2 is characterized in that: the content of described substrate Al is 60%-90%, and the content of Si is 10%-40%.
4. LED package module according to claim 1, it is characterized in that: described substrate has solid crystal face and wiring side, described solid crystal face and described wiring side be arranged in parallel, in described wiring side, are provided with the excessive face of reflection between described solid crystal face and the described wiring side at the bottom of the height of described solid crystal face.
5. LED package module according to claim 4, it is characterized in that: described wiring side is arranged at the end face of described substrate, described returning penetrated excessive face and had two, two excessive faces of reflection are separately positioned on two sides of described solid crystal face, and described solid crystal face and the excessive face of described reflection are formed the groove of a strip.
6. LED package module according to claim 5 is characterized in that: described two excessive faces of reflection are the plane, are arranged at two sides of described solid crystal face symmetrically.
7. LED package module according to claim 5 is characterized in that: described two excessive faces of reflection are cambered surface, and the concave surface of two cambered surfaces is provided with in opposite directions, is arranged at two sides of described solid crystal face symmetrically.
8. LED package module according to claim 4, it is characterized in that: described wiring side is arranged at the end face of described substrate, described solid crystal face and the excessive face of described reflection constitute the big taper hole of an end osculum, described solid crystal face is the bottom surface of described taper hole, and the excessive face of described reflection is the sidewall of described taper hole.
9. LED package module according to claim 1 is characterized in that: the content of described substrate Al is 85%, and the content of Si is 15%; Described substrate has solid crystal face and wiring side, and described solid crystal face and described wiring side be arranged in parallel, in described wiring side, is provided with the excessive face of reflection between described solid crystal face and the described wiring side at the bottom of the height of described solid crystal face; Described wiring side is arranged at the end face of described substrate, and described returning penetrated excessive face and had two, and two excessive faces of reflection are separately positioned on two sides of described solid crystal face, and described solid crystal face and the excessive face of described reflection are formed the groove of a strip; Described two excessive faces of reflection are the plane, are arranged at two sides of described solid crystal face symmetrically.
10. LED package module according to claim 1 is characterized in that: the content of described substrate Al is 85%, and the content of Si is 15%; Described substrate has solid crystal face and wiring side, and described solid crystal face and described wiring side be arranged in parallel, in described wiring side, is provided with the excessive face of reflection between described solid crystal face and the described wiring side at the bottom of the height of described solid crystal face; Described wiring side is arranged at the end face of described substrate, and described solid crystal face and the excessive face of described reflection constitute the big taper hole of an end osculum, and described solid crystal face is the bottom surface of described taper hole, and the excessive face of described reflection is the sidewall of described taper hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910108732A CN101691907A (en) | 2009-07-10 | 2009-07-10 | Led packaging module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910108732A CN101691907A (en) | 2009-07-10 | 2009-07-10 | Led packaging module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101691907A true CN101691907A (en) | 2010-04-07 |
Family
ID=42080615
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910108732A Pending CN101691907A (en) | 2009-07-10 | 2009-07-10 | Led packaging module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101691907A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103216746A (en) * | 2012-01-20 | 2013-07-24 | 东莞市万丰纳米材料有限公司 | Light source module and preparation method thereof |
-
2009
- 2009-07-10 CN CN200910108732A patent/CN101691907A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103216746A (en) * | 2012-01-20 | 2013-07-24 | 东莞市万丰纳米材料有限公司 | Light source module and preparation method thereof |
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Open date: 20100407 |