CN101689505A - Substrate heating apparatus - Google Patents
Substrate heating apparatus Download PDFInfo
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- CN101689505A CN101689505A CN200880023470A CN200880023470A CN101689505A CN 101689505 A CN101689505 A CN 101689505A CN 200880023470 A CN200880023470 A CN 200880023470A CN 200880023470 A CN200880023470 A CN 200880023470A CN 101689505 A CN101689505 A CN 101689505A
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- substrate
- heating unit
- rear surface
- lining heat
- chamber
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- 239000000758 substrate Substances 0.000 title claims abstract description 190
- 238000010438 heat treatment Methods 0.000 title claims abstract description 81
- 230000000903 blocking effect Effects 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 claims abstract description 9
- 230000004888 barrier function Effects 0.000 claims description 25
- 239000010408 film Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 7
- 238000001771 vacuum deposition Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 5
- 238000006731 degradation reaction Methods 0.000 abstract description 5
- 239000011521 glass Substances 0.000 description 11
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
A substrate heating apparatus is provided. The substrate heating apparatus includes a chamber, a substrate supporting unit configured to support at least one substrate where a thin film is formed on the top surface thereof, and at least one heating unit disposed in a region adjacent to the rear surface of the substrate. The heating unit includes a plurality of reflecting units arranged under the substrate, at least one lamp heating unit disposed inside the plurality of reflecting units, and a short- wavelength blocking layer disposed on the lamp heating unit. By providing the lamp heating unitunder the substrate where the thin film or pattern is formed on the top surface, and supplying heat energy to the rear surface of the substrate, it is possible to prevent the degradation in efficiency of the thin film, such as degradation of the thin film formed on the top surface of the substrate due to the heat source or the peeling of the thin film due to the temperature deviation between thesubstrate and the thin film. Furthermore, the heat energy is widely spread out at the central region of the rear surface of the substrate, and the heat energy is focused at the edge region of the substrate, thereby heating the large-sized substrate uniformly.
Description
Technical field
The present invention relates to a kind of lining heat, and more particularly relate to and a kind ofly be used to preheat through the surface treatment or the lining heat of the large-sized substrate of deposit film on it.
Background technology
In general, because large-sized substrate has slowly that temperature gathers way, therefore before main the processing, described large-sized substrate preheated in the chamber (that is lining heat) and be heated to treatment temperature.That is, will be loaded in the situation of leading processing in the chamber without the substrate of heating therein, need be used to heat the extra process time of described substrate.In addition, if low-temperature substrate is loaded in the high-temperature main, so described substrate is reduced by the internal temperature of cause thermal damage and described main chamber can.
Therefore, according to correlation technique, provide lining heat illustrated among Fig. 1 to be used to preheat substrate.
With reference to figure 1, conventional lining heat comprises: vacuum chamber 1; Substrate support 3, its bottom part that is placed in vacuum chamber 1 is sentenced support substrates 2; And lamp heater 4, its top part that is placed in vacuum chamber 1 is sentenced and is heated the substrate 2 that is positioned on the substrate support 3.Conventional lining heat is positioned on the substrate support 3 by the substrate 2 that will be loaded and uses lamp heater 4 heated substrate 2 that are placed in substrate 2 tops to carry out and preheats processing.
In conventional lining heat, yet, be on the substrate 2 to heat described film than substrate 2 in the film forming situation ly, therefore cause the problem of heated substrate 2 inadequately.
In recent years, use thick special glass substrate to make solar cell, wherein predetermined pattern is formed on the glass substrate and film is formed on the described glass substrate that comprises described predetermined pattern.When using above-mentioned conventional lining heat to heat described thick special glass substrate, arrive described film than described glass substrate with fabulous absorptivity from the radiant heat of lamp heater 4 ly.Therefore, most of radiant heat is absorbed on the surface of described film, thereby carries out the heating of described glass substrate inadequately.Therefore, the temperature that receives a large amount of photothermal films uprises and the temperature of glass substrate becomes low relatively, thereby forms big thermal stress because of therebetween temperature deviation between described substrate and described film.This thermal stress causes making the problem of the degradation of efficiency of the solar cell of making by subsequent treatment.In addition, when the heating large substrate, described substrate can twist or breaks because of the central area of described substrate and the temperature difference between the fringe region.
Summary of the invention
The invention provides a kind of lining heat, wherein the lamp heater is placed in below the substrate so that be transferred to the bottom of described substrate equably from the heat of described lamp heater, whereby equably heating large substrate (increasing the temperature of large-sized substrate) and reduce described substrate and film formed thereon between temperature deviation.
Technical solution
According to an aspect of the present invention, a kind of lining heat comprises: the chamber; The substrate supports unit, it is configured to support at least one substrate, and described at least one substrate is formed with film above its top surface; And at least one heating unit, it is placed in the zone of the rear surface that is adjacent to described substrate, and wherein said heating unit comprises: a plurality of reflector elements, it is arranged in below the described substrate; At least one lamp heating unit, it is placed in described a plurality of reflector elements inside; And the short wavelength barrier layer, it is placed on the described lamp heating unit.
Described short wavelength barrier layer can form by apply the light blocking film manufacturing with haze degree on transparent substrates, or by forming, or form by on described transparent substrates, depositing thin film fabrication with haze degree by the employing vacuum deposition method by adopting the screen printing method on described transparent substrates, to apply film manufacturing with light blocking characteristic.
Described short wavelength barrier layer can be about 40% to about 80% to the scope that stops of about 350nm or littler light.
In the described reflector element each can comprise the speculum that is arranged as the V-arrangement shape.
The described speculum of described reflector element can have different slopes.
Described a plurality of reflector element can arrange along the direction of the described rear surface that is parallel to described substrate, and the described slope of described speculum that is placed in the described reflector element inside below the described substrate is when increasing gradually during to fringe region from the central area of the described rear surface of described substrate.
Described a plurality of reflector element can arrange along the direction of the described rear surface that is parallel to described substrate, and the number of described lamp heating unit that is placed in the described reflector element inside below the described substrate is when increasing gradually during to fringe region from the central area of the described rear surface of described substrate.
Described short wavelength barrier layer can have the plate shape to cover described a plurality of reflector elements that described lamp heating unit wherein is provided.
Described lining heat can further comprise the gas supply unit that is configured to supply at described indoor mobile inert gas.
In-line arrangement vertical chamber can be used in described chamber, and comprises and be arranged vertically in described indoor a plurality of substrates and be placed in a plurality of heating units below the described rear surface of described a plurality of substrates.
Favourable effect
As mentioned above, described lamp heating unit is provided below the described substrate that is formed with film or pattern on described top surface and heat energy is fed to the described rear surface of described substrate, the degradation of efficiency of described film be can prevent, degradation that the described film of the described top surface top of described substrate causes because of thermal source or described film for example are formed at because of peeling off that the temperature deviation between described substrate and the described film causes.
In addition, described heat energy is scattered widely in the central area of the described rear surface of described substrate, and described heat energy is concentrated at the fringe region place of described substrate, heating large substrate equably promptly, increases the temperature of described large-sized substrate equably whereby.
Description of drawings
Fig. 1 is the cross-sectional view of conventional lining heat;
Fig. 2 is the cross-sectional view of lining heat according to an embodiment of the invention; And
Fig. 3 to 5 is cross-sectional views of the modification of lining heat according to an embodiment of the invention.
Embodiment
Fig. 2 is the cross-sectional view of lining heat according to an embodiment of the invention.
Fig. 3 to 5 is cross-sectional views of the modification of lining heat according to an embodiment of the invention.
With reference to figure 2, lining heat comprises according to an embodiment of the invention: chamber 100; Substrate supports unit 200, its support substrates 10; And heating unit 300, it is placed in below the substrate 10.Heating unit 300 comprises: a plurality of reflector elements 310; A plurality of lamp heating units 320, each lamp heating unit are placed in a plurality of reflector elements 310 inside; And short wavelength barrier layer 330, it is placed in lamp heating unit 320 tops.
Though do not show that a side place of 100 provides the opened/closed of loading and unload substrate whereby mouth in the chamber.Equally, though show, can be connected to a side of process chamber or transmit the transfer chamber of substrate by described opened/closed mouth according to the heating chamber 100 of this embodiment.By above installation, can before being loaded into low-temperature substrate in the process chamber, preheat it.
Substrate supports unit 200 comprises a plurality of substrate support pins of support substrates 10.The rear surface of described a plurality of substrate support pins support substrates 10.
Employed in this embodiment substrate 10 is large-scale special substrate.That is, the substrate that is formed with projection-recessed pattern on its of Fig. 1 as special substrate and can be on described projection-recessed pattern further cambium layer.The transparent substrates that use is made by (for example) glass or resin is as special substrate.In this embodiment, be used to make the glass substrate of solar cell as substrate 10.In this case, chevron projection-recessed pattern can be formed on the top surface of described glass substrate, and transparency electrode can be formed at the described glass substrate top that its place forms described projection-recessed pattern.
Because the projection-recessed pattern or the layer of wanting are formed on the top surface of substrate 10, so its place does not form described projection-recessed pattern or the described rear surface (that is basal surface) of the described substrate of layer of wanting can be supported by substrate support pins.
In this embodiment, use the substrate supports unit 200 of described a plurality of substrate support pins can realize between substrate 10 and substrate supports unit 200 that point contacts.In this way, when heated substrate 10, can minimize the thermal change that causes because of substrate supports unit 200, and the photothermal of lamp heating unit 320 that can minimize because of 200 pairs of heating unit 300 inside, substrate supports unit stops.
The substrate support pins of substrate supports unit 200 can rise and descend.Therefore, described a plurality of substrate support pins descend when substrate 10 is loaded in the heating chamber 100, and then rise with support substrates 10 when the loading of substrate 10 is finished.After the heating of substrate 10 was finished, described a plurality of substrate support pins descended once more to promote the unloading of substrate 10.For this reason, substrate supports unit 200 comprises the independent actuators that is used for upwards and moves down described a plurality of substrate support pins.
The substrate supports unit 200 of the rear surface of support substrates 10 is provided between a plurality of reflector elements 310 below the rear surface of substrate 10.
In a plurality of reflector elements 310 each comprises the speculum 311 and 312 that is arranged as the V-arrangement shape.In this case, as illustrated among Fig. 2, each in a plurality of reflector elements 310 comprises from first speculum 311 of upper right side towards the inclination of lower-left end, and from second speculum 312 of left upper end to the bottom righthand side inclination.Obviously, the present invention is not limited to this embodiment, and reflector element 310 can be the speculum that integrally forms the V-arrangement shape.
The present invention is not limited to this embodiment, and the slope of the speculum of reflector element 310 inside can differ from one another, and is illustrated in the modification as Fig. 3 and 5.That is, the slope of the speculum of reflector element 310 inside can increase towards fringe region from the central area of the rear surface of substrate 10.Described slope represent speculum 311 and 312 and the basal surface of chamber 100 between angle.As illustrated in Fig. 3 and 5, the speculum 311 and 312 that is placed in reflector element 310 inside below the central area of rear surface of substrate 10 can have minimum slope, and the speculum 311 and 312 that is placed in reflector element 310 inside below the fringe region of rear surface of substrate 10 can have greatest gradient.
The rear surface that a plurality of reflector elements 310 are parallel to substrate 10 is arranged on the basal surface of chamber 100.Suppose first speculum at the upper right side place that will be placed in reflector element 310 and be placed in the width that distance bound between second speculum at left upper end place is decided to be reflector element 310, the width of reflector element 310 can be mutually the same so, as illustrated among Fig. 2.The present invention is not limited to this embodiment, and the width of reflector element 310 can reduce towards fringe region gradually from the central area, as illustrated in Fig. 3 and 5.As mentioned above,, heat energy is scattered widely in central area, and heat energy edge region place is concentrated by this configuration.
At least one lamp heating unit 320 is provided in in the reflector element 310 each.The number that is provided in the lamp heating unit 320 of reflector element 310 inside can increase towards fringe region gradually from the central area of the rear surface of substrate 10.That is, as illustrated among Fig. 2, lamp heating unit 320 is provided in to be placed in reflector element 310 inside below the central area; Three lamp heating units 320 are provided in to be placed in reflector element 310 inside below the fringe region; And two lamp heating units 320 are provided in to be placed in the reflector element 310 below the central area and are placed in reflector element 310 inside between the reflector element 310 below the fringe region.In this embodiment, this configuration can increase the amount of heat energy gradually from the central area of the rear surface of substrate 10 to fringe region.As mentioned above, this configuration can be provided to heat energy the central area and the fringe region of large-sized substrate 10 equably.Obviously, the present invention is not limited to this exemplary embodiment, and a lamp heating unit 320 can be provided in reflector element 310 inside, and is illustrated in the modification as Fig. 5.
Short wavelength barrier layer 330 has the part of the short-wavelength light of (for example) 350nm or littler wavelength by light absorption, diffraction and reflection blocking.
Short wavelength barrier layer 330 is to form by apply the manufacturing of light blocking film on transparent substrates.In this case, described light blocking film uses the film that has the haze degree and can at high temperature tolerate.According to another embodiment, short wavelength barrier layer 330 can form by applying the layer manufacturing with light blocking characteristic by use screen printing method on transparent substrates.That is, the fluent material that uses the screen printing method will have the haze degree is coated on the substrate and then it is heat-treated to make short wavelength barrier layer 330.In addition, the present invention is not limited to those embodiment, and short wavelength barrier layer 330 can be by forming by using vacuum deposition method to form the thin film fabrication with haze degree on transparent substrates.Can use chemical vapor deposition (CVD) or metal-organic chemical vapor deposition equipment (MOCVD) as vacuum deposition method, and during the MOCVD process, use predecessor effective with optical absorption characteristics.In this case, can use various layers and silicon layer to make the film of haze degree.
The light transmittance on short wavelength barrier layer 330 can change according to the amount of haze degree.
320 emissions of lamp heating unit have the light of short wavelength to the long wavelength.Light with short wavelength has high heat energy and fabulous diffraction and reflection characteristic.On the other hand, the light with long wavelength has the heat energy lower than the short wavelength, but has fabulous transmittance.Therefore, when lamp heating unit 320 is placed in below the rear surface of substrate 10, at first by the lower area of light heated substrate 10 with high-octane short wavelength, and after a while by the upper area of the light heated substrate 10 with low-energy long wavelength.That is, the short-wavelength light heating has the light contact surface that high-octane short-wavelength light arrives, and increases temperature equably until the opposite side that described light does not arrive is quite difficult but its short wavelength is feasible.Compare with short-wavelength light, long wavelength light is not fed to high-energy described smooth contact surface, but it penetrates dearly because of the long wavelength, so that the temperature of the opposite side that described light does not arrive evenly increases.
As mentioned above, in this exemplary embodiment, short wavelength barrier layer 330 is provided in the space between lamp heating unit 320 and the substrate 10 so that stop from the short wavelength's of the light of lamp heating unit 320 emissions a part.Therefore, equably the rear surface of heated substrate 10 and top surface and be formed at substrate 10 tops the layer 11.That is, by stopping short wavelength's the described part of light that is fed to the lower area of substrate 10 along the thickness direction of substrate 10, can make the lower area that is applied to substrate 10 light energy amount and to be applied to the amount of light energy of upper area of substrate 10 even.Short wavelength barrier layer 330 can stop about 40-80% of short wavelength's (for example 350nm or still less) of the light that applies.The amount of haze degree that as mentioned above, can be by control short wavelength barrier layer 330 is adjusted the wavelength blocking degree.
For example, short wavelength barrier layer 330 stops from the short wavelength's of the light of lamp heating unit 320 supply about 50% situation therein, 50% the short-wavelength light that will have primary energy is fed to the lower area of substrate 10, and will have the upper area that the long wavelength light that does not change energy is fed to substrate 10.In this way, the high-octane short-wavelength light that is fed to the lower area of substrate 10 is reduced to the energy level with the energy level that is similar to low-energy long wavelength light, therefore realizes evenly heating along the thickness direction of substrate 10.
Short wavelength barrier layer 330 stops the short-wavelength light that applies from lamp heating unit 320 and also by described short-wavelength light heating.Therefore, also can be by short wavelength barrier layer 330 heated substrate 10 through heating.
As illustrated among Fig. 4, can heat the top and the lower area of described substrate equably to flow phenomenon by what use was fed to inert gas in the chamber 10.That is, heat the inert gas that is fed in the chamber 10, and move to the upper area of substrate with the heating upper area through the inert gas of heating at the lower area place of substrate.For this reason, illustrated embodiment further comprises inert gas is fed to gas supply unit 400 in the chamber 10 among Fig. 4.
In addition, as illustrated among Fig. 5, in in-line arrangement vertical chamber 100, use two heating units 300 to heat two substrates 10 simultaneously.That is, be arranged to make its rear surface towards each other two substrates 10, and two heating units 300 be arranged in the space between the rear surface of two substrates 10.In this state, can be by heating unit 300 heated substrate 10 individually.In this case, the heating of substrate 10 can be used the emittance or the convection energy of inert gas.
Though describe lining heat of the present invention with reference to these specific embodiments, it is not limited to this.Therefore, the those skilled in the art can make easy to understand various modifications and changes and not deviate from spirit of the present invention and the scope that is defined by appended claims the present invention.
Claims (10)
1, a kind of lining heat, it comprises:
The chamber;
The substrate supports unit, it is configured to support at least one substrate, and described at least one substrate is formed with film above its top surface; And
At least one heating unit, it is placed in the zone of the rear surface that is adjacent to described substrate,
Wherein said heating unit comprises:
A plurality of reflector elements, it is arranged in below the described substrate;
At least one lamp heating unit, it is placed in described a plurality of reflector elements inside; And
The short wavelength barrier layer, it is placed on the described lamp heating unit.
2, lining heat as claimed in claim 1, wherein said short wavelength barrier layer is to form by apply the light blocking film manufacturing with haze degree on transparent substrates, or by forming, or form by on described transparent substrates, depositing thin film fabrication with haze degree by the employing vacuum deposition method by adopting method for printing screen on described transparent substrates, to apply film manufacturing with light blocking characteristic.
3, lining heat as claimed in claim 1, wherein said short wavelength barrier layer is about 40% to about 80% to the scope that stops of about 350nm or littler light.
4, lining heat as claimed in claim 1, each in the wherein said reflector element comprises the speculum that is arranged as the V-arrangement shape.
5, lining heat as claimed in claim 4, the described speculum of wherein said reflector element has different slopes.
6, lining heat as claimed in claim 4, wherein said a plurality of reflector elements arrange along the direction of the described rear surface that is parallel to described substrate, and the described slope that is placed in the described speculum of the described reflector element inside below the described substrate increases to fringe region gradually from the central area of the described rear surface of described substrate.
7, lining heat as claimed in claim 1, wherein said a plurality of reflector elements arrange along the direction of the described rear surface that is parallel to described substrate, and the number that is placed in the described lamp heating unit of the described reflector element inside below the described substrate increases to fringe region gradually from the central area of the described rear surface of described substrate.
8, lining heat as claimed in claim 1, wherein said short wavelength barrier layer have the plate shape to cover described a plurality of reflector elements that described lamp heating unit wherein is provided.
9, lining heat as claimed in claim 1, it further comprises the gas supply unit that is configured to supply at described indoor mobile inert gas.
10, lining heat as claimed in claim 1, in-line arrangement vertical chamber is used in wherein said chamber, and comprises and be arranged vertically in described indoor a plurality of substrates and be placed in a plurality of heating units below the described rear surface of described a plurality of substrates.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070069018A KR20090005736A (en) | 2007-07-10 | 2007-07-10 | Substrate heating apparatus |
| KR1020070069018 | 2007-07-10 | ||
| PCT/KR2008/004060 WO2009008673A2 (en) | 2007-07-10 | 2008-07-10 | Substrate heating apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101689505A true CN101689505A (en) | 2010-03-31 |
Family
ID=40229280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200880023470A Pending CN101689505A (en) | 2007-07-10 | 2008-07-10 | Substrate heating apparatus |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR20090005736A (en) |
| CN (1) | CN101689505A (en) |
| TW (1) | TWI433249B (en) |
| WO (1) | WO2009008673A2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103839854A (en) * | 2012-11-23 | 2014-06-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Semiconductor processing device and degas chamber and heating assembly thereof |
| CN105280504A (en) * | 2014-05-29 | 2016-01-27 | Ap系统股份有限公司 | Apparatus for heating substrates |
| CN106399976A (en) * | 2015-08-03 | 2017-02-15 | 奥塔装置公司 | Reflector and susceptor assembly for chemical vapor deposition reactor |
| CN112599439A (en) * | 2019-10-02 | 2021-04-02 | 细美事有限公司 | Support unit, substrate processing apparatus including the same, and substrate processing method |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10711348B2 (en) * | 2015-03-07 | 2020-07-14 | Applied Materials, Inc. | Apparatus to improve substrate temperature uniformity |
| JP6554328B2 (en) * | 2015-05-29 | 2019-07-31 | 株式会社Ｓｃｒｅｅｎホールディングス | Heat treatment equipment |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR920009371B1 (en) * | 1990-05-21 | 1992-10-15 | 재단법인 한국전자통신연구소 | Rapid thermal preocessing apparatus of double-sided heating type |
| JP3224508B2 (en) * | 1996-05-23 | 2001-10-29 | シャープ株式会社 | Heating control device |
| JP2006279008A (en) * | 2005-03-02 | 2006-10-12 | Ushio Inc | Heater and heating apparatus having the same |
-
2007
- 2007-07-10 KR KR1020070069018A patent/KR20090005736A/en not_active Application Discontinuation
-
2008
- 2008-07-10 TW TW97126203A patent/TWI433249B/en active
- 2008-07-10 WO PCT/KR2008/004060 patent/WO2009008673A2/en active Application Filing
- 2008-07-10 CN CN200880023470A patent/CN101689505A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103839854A (en) * | 2012-11-23 | 2014-06-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Semiconductor processing device and degas chamber and heating assembly thereof |
| CN105280504A (en) * | 2014-05-29 | 2016-01-27 | Ap系统股份有限公司 | Apparatus for heating substrates |
| CN106399976A (en) * | 2015-08-03 | 2017-02-15 | 奥塔装置公司 | Reflector and susceptor assembly for chemical vapor deposition reactor |
| US10932323B2 (en) | 2015-08-03 | 2021-02-23 | Alta Devices, Inc. | Reflector and susceptor assembly for chemical vapor deposition reactor |
| CN112599439A (en) * | 2019-10-02 | 2021-04-02 | 细美事有限公司 | Support unit, substrate processing apparatus including the same, and substrate processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI433249B (en) | 2014-04-01 |
| TW200933778A (en) | 2009-08-01 |
| WO2009008673A2 (en) | 2009-01-15 |
| KR20090005736A (en) | 2009-01-14 |
| WO2009008673A3 (en) | 2009-03-05 |
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Application publication date: 20100331 |