WO2012071902A1

WO2012071902A1 - Preprocessing equipment and preprocessing method thereof

Info

Publication number: WO2012071902A1
Application number: PCT/CN2011/078062
Authority: WO
Inventors: 李一成
Original assignee: 理想能源设备(上海)有限公司
Priority date: 2010-12-02
Filing date: 2011-08-05
Publication date: 2012-06-07
Also published as: CN102487101A

Abstract

A preprocessing equipment and preprocessing method thereof are provided. The preprocessing equipment comprises a processing chamber (100), a base (101) disposed within the processing chamber (100) for supporting a component to be heated; a first heating unit (201) disposed opposite to the component to be heated and located above the component to be heated; a compensation heating unit (202) disposed around the base (101) for compensating the edge region of component to be heated. The compensation heating unit (202) disposed around the base (101) has high directivity, and can compensate the edge region of component to be heated, thus the heating uniformity of the surface of component to be heated could be improved.

Description

Pretreatment apparatus and pretreatment method thereof The present application claims priority to Chinese patent application filed on December 2, 2010 by the State Intellectual Property Office of China, Application No. 201010571397.1, entitled "Pretreatment Device and Pretreatment Method" The entire contents of which are incorporated herein by reference. Technical field

The present invention relates to a pretreatment apparatus and a pretreatment method thereof, and more particularly to a pretreatment apparatus for pretreating a large-area glass substrate and a pretreatment method thereof. Background technique

Among many solar cell application technologies, thin film solar cells are widely used in aviation, aerospace, and people's daily lives because of their non-polluting, low energy consumption, low cost, and large-scale production. Common thin film solar cells include: amorphous silicon thin film solar cells, copper indium gallium selenide thin film batteries and cadmium telluride thin film batteries. Further formation methods of the above-described solar thin film batteries can be found in the Chinese invention patent documents of the publications Nos. 101,027,749 and 101,226,967.

Taking the method of forming an amorphous silicon thin film solar cell as an example, considering that the area is large enough and the cost is low, the substrate of the amorphous silicon thin film solar cell is usually made of glass. A non-crystalline silicon film is deposited on a large-area glass substrate, and a reaction temperature of about 200 ° C is required. The heat resistance of the glass substrate is limited. If the glass substrate at normal temperature is directly sent to the reaction chamber for high-temperature deposition, it is easy to cause cracking of the glass substrate due to excessive temperature rise in a short time, and affect the deposition effect. Therefore, preheating the glass substrate before the glass substrate is formed is an effective method for improving production efficiency.

Existing glass substrate heating devices generally employ infrared heating technology. When heating a large-area glass substrate, the radiant heating effect on the surface is not the same due to the large area. Usually, the central region of the glass substrate is more susceptible to heat radiation from the surrounding infrared rays, so the temperature is always higher than the surrounding temperature, and the faster the heating, the greater the temperature difference. When the temperature difference at different positions of the glass substrate reaches about 70 ° C, cracking will occur. However, in order to obtain better heating uniformity, it is necessary to slow down the heating rate, which will affect the efficiency of production. On the other hand, when infrared rays are irradiated onto a transparent glass substrate, they are easily transmitted directly, and the effect of radiant heating is also unsatisfactory. In summary, such as How to quickly and uniformly heat the glass substrate becomes the urgent need to solve the preheating technology. Summary of the invention

It is an object of the present invention to provide a pretreatment apparatus and a pretreatment method thereof to meet the need for rapid and uniform heating of a large area glass substrate.

The pretreatment apparatus of the present invention includes: a processing chamber, a pedestal disposed in the processing chamber for carrying a workpiece to be heated; and a first disposed opposite to the workpiece to be heated and located above the workpiece to be heated a heating unit; a compensation heating unit disposed around the base for compensating for heating an edge region of the workpiece to be heated.

Optionally, the first heating unit is heated by infrared rays, and comprises an infrared heat lamp of a tubular shape, a sheet shape, a spherical shape, an elliptical shape, a column shape or a dot shape.

Optionally, the compensation heating unit is heated by infrared rays, and comprises an infrared heating lamp of a tubular shape, a sheet shape, a spherical shape, an elliptical shape, a column shape or a dot shape. Further, the compensation heating unit further includes a mirror for reflecting infrared rays generated by the infrared heating lamp to an edge region of the workpiece to be heated.

Optionally, the distance between the compensation heating unit and the workpiece to be heated is closer than the distance between the first heating unit and the workpiece to be heated.

Optionally, the susceptor is a carbon or silicon carbide susceptor. A heater is disposed in the base. The heater is a resistance wire, a quartz heating tube or a ceramic heating sheet. The base surface has a groove or raised support structure such that a gap is formed between the base and the workpiece to be heated carried by it.

Optionally, the first infrared heating unit comprises a plurality of infrared heating tubes arranged at intervals. Optionally, the spacing between the infrared heating tubes is equal, and the two ends are flush; or the spacing between the infrared heating tubes is equal, and the intervals are arranged in a staggered arrangement. Optionally, the first infrared heating unit has a central area and an edge area, and the spacing between the infrared heating tubes of the central area is larger than the spacing between the infrared heating tubes of the edge area. Optionally, the distance between the infrared heating tube of the central area and the workpiece to be heated is greater than the distance between the infrared heating tube of the edge area and the workpiece to be heated.

Optionally, the first heating unit comprises a dot-shaped infrared heating lamp arranged in an array. Optionally, in the dot-shaped infrared heating lamp arranged in the array, the dot pitch is consistent. Optionally, the first heating unit has a central area and an edge area. In the dot-shaped infrared heating lamp arranged in the array, the dot pitch of the central area is greater than the dot pitch of the edge area. A temperature sensor is disposed in the processing chamber for measuring the temperature of the susceptor and the workpiece to be heated. Also included is an intake passage connected to the processing chamber at the bottom of the processing chamber and an exhaust passage for introducing a heat transfer gas or a cleaning gas to the processing chamber, the exhaust passage being used for the processing chamber Exhaust. Optionally, the heat transfer gas comprises hydrogen, nitrogen, helium or any other inert gas. The cleaning gas includes hydrogen.

The pretreatment method of the present invention comprises: carrying a glass substrate to be heated on a susceptor; and uniformly heating the central region and the edge region of the workpiece to be heated using the first heating unit and the compensation heating unit in a vacuum environment . The heating using the compensation heating unit includes reflecting the thermal radiation to an edge region of the workpiece to be heated.

The preprocessing method further includes:

Setting a first temperature and a second temperature, and stopping heating after the workpiece to be heated and the susceptor are respectively heated to a first temperature and a second temperature;

A heat transfer gas is introduced into the processing chamber such that the workpiece to be heated and the susceptor reach the target temperature by heat transfer.

Optionally, the base is a carbon base or a silicon carbide base. There is a gap between the workpiece to be heated and the base. The heat transfer gas that is introduced includes hydrogen, nitrogen, helium or any other inert gas.

Preferably, the first temperature is greater than or equal to 170 ° C and less than or equal to 180 ° C, the second temperature is greater than or equal to 220 ° C and less than or equal to 230 ° C, and the target temperature is greater than or equal to 190 ° C and less than or equal to 210 ° C.

The pretreatment method further includes introducing a cleaning gas having a reducing property into the processing chamber to clean the heated workpiece. The cleaning gas includes hydrogen.

Compared with the prior art, the pretreatment device and the pretreatment method thereof have the following advantages: the compensation heating unit disposed around the base has high directivity and is closer to the workpiece to be heated, and can be used for compensation heating The edge area of the workpiece to be heated improves the heating uniformity of the surface of the workpiece to be heated. Further, the compensation heating unit further uses a mirror to reflect the infrared rays generated by the infrared heating lamp, thereby greatly improving the utilization efficiency of the infrared rays generated by the infrared heating lamp, and enhancing the heating effect of the compensation heating unit.

The use of a carbon or silicon carbide pedestal, and the use of a heat transfer gas having a large heat capacity to form a convection between the susceptor and the glass substrate, is advantageous for improving the utilization efficiency of the heat source, and transferring the heat of the susceptor to the glass substrate quickly and uniformly. , the heating efficiency of the glass substrate is remarkably improved while obtaining a good uniform heating effect.

An additional heater may be disposed in the base to heat the glass substrate by heat transfer. In order to increase the heating speed, the heating efficiency is improved.

The first heating unit comprises a plurality of infrared heating tubes arranged at intervals, and the spacing between the infrared heating tubes is equal, so that the heating effect is easily controlled.

The first heating unit may also have a central area and an edge area. The spacing between the infrared heating tubes of the central region is greater than the spacing between the infrared heating tubes of the edge regions, thereby enhancing the heating effect of the infrared heating tube in the edge region; or, the infrared heating tube of the central region The distance of the workpiece to be heated is greater than the distance between the infrared heating tube of the edge region and the workpiece to be heated, thereby enhancing the heating effect of the edge region of the workpiece to be heated.

Further, after the workpiece to be heated is preheated, a cleaning gas having a reducing property is introduced into the processing chamber, and the heating member can be cleaned by a reduction reaction between the cleaning gas and the organic impurities in a high temperature environment.

DRAWINGS

Figure 1 is a schematic view of the pretreatment apparatus of the present invention;

2 is a top plan view showing a specific embodiment of the first heating unit of the present invention;

2a is a top plan view of another embodiment of the first heating unit of the present invention;

2b is a schematic cross-sectional view showing still another embodiment of the first heating unit of the present invention;

3 is a schematic view of a specific embodiment of the compensation heating unit of the present invention;

4 is a schematic flow chart of a pretreatment method according to the present invention;

5 to FIG. 8 are schematic diagrams showing steps of pretreating a glass substrate according to an embodiment of the present invention.

detailed description

When the conventional large-area glass substrate is subjected to infrared heating, it is easily restricted by the effect of infrared irradiation, and there is a problem that the surface is unevenly heated, which affects the preheating efficiency. In the present invention, the infrared heating unit having high directivity is used to heat the edge region of the glass substrate to improve the heating effect of the edge region of the glass substrate, thereby improving the heating uniformity of the surface of the glass substrate.

As shown in FIG. 1, the basic structure of the pretreatment apparatus of the present invention includes: a processing chamber 100, a susceptor 101 disposed in the processing chamber 100 for carrying a workpiece to be heated; and a workpiece disposed opposite to the workpiece to be heated a first heating unit 201 located above the workpiece to be heated; disposed around the base 101 for compensating for the compensation heating unit 202 for heating the edge region of the workpiece to be heated.

In a specific embodiment, the susceptor 101 may be a carbon pedestal or a silicon carbide pedestal disposed at the bottom of the processing chamber 100. The first infrared heating unit 201 is located at the top of the processing chamber 100, and is to be The workpiece is heated relative to the surface, that is, to the surface area of the susceptor 101. The surface of the base 101 has a groove or a supporting structure provided with a protrusion, and the EJ groove or the protruding support structure can have a gap between the base and the workpiece to be heated to facilitate the passage into the processing chamber 100. When the gas is thermally transferred, the heat transfer gas forms convection in the gap, accelerates the heat transfer speed, improves the utilization efficiency of the heat source, and further enhances the heating uniformity of the workpiece to be heated. In addition, an additional heater such as a resistance wire, a quartz heating tube, a ceramic heating sheet, or the like may be disposed in the susceptor 101, and the workpiece to be heated is heated by the heat transfer of the susceptor 101 to increase the heating speed. Increasing Heating Effect In some embodiments of the present invention, the first heating unit 201 is heated by infrared rays, and includes a tubular, sheet, spherical, ellipsoidal, columnar or dot-shaped infrared heating lamp.

In order to meet the uniform heating requirements for the plate-shaped workpiece to be heated, the first heating unit 201 may include a plurality of spaced-apart infrared heating tubes.

Specifically, the distance between the infrared heating tubes is equal, and the two ends are flush; or the spacing between the infrared heating tubes is equal, and the intervals are arranged in a staggered arrangement, which is easy to control the heating effect. As shown in FIG. 2, in a specific embodiment, the first heating unit 201 includes a plurality of longitudinal infrared heating tubes 201a arranged at intervals, and the longitudinal infrared heating tubes 201a are equally spaced and flush at both ends. The lateral infrared heating tube 201b for enhancing the edge heating effect is provided on both sides of the arrangement direction of the longitudinal infrared heating tube 201a. The plurality of infrared heating tubes are opposite to the surface area of the susceptor 101, and each of the infrared heating tubes has the same distance from the susceptor plane, so that the surface of the workpiece (not shown) on the susceptor 101 to be heated can be uniformly distributed throughout the surface. Infrared illumination.

The infrared heating tube may further have a central portion and an edge portion. Specifically, the central area and the edge area may be disposed according to an area of the infrared heating tube and its correspondingly illuminated workpiece to be heated. For example, the square glass substrate whose workpiece area to be heated is 1.3×1.1 (m 2 ) is centered on the infrared heating tube of the area where the center area of the workpiece to be heated is 0.8×1.1 (m 2 ). Infrared heating tube, the rest is the infrared heating tube in the edge area.

Adjusting the arrangement density of the infrared heating tubes such that the spacing between the infrared heating tubes of the central region is inconsistent with the spacing between the infrared heating tubes of the edge regions, as shown in Figure 2a, in another embodiment, The first infrared heating unit 201 includes infrared heating tubes arranged in parallel, wherein a spacing d1 between the infrared heating tubes 201c of the central region is larger than a spacing d2 between the infrared heating tubes 201d of the edge regions, and the infrared heating of the edge regions is improved. The infrared density of the tube 201d is strengthened The heating effect of the infrared heating tube 201d in the edge region.

The distance between each infrared heating tube and the workpiece to be heated may also be adjusted such that the distance between the infrared heating tube of the central region and the workpiece to be heated is different from the distance between the infrared heating tube of the edge region and the workpiece to be heated, as shown in FIG. 2b. In another embodiment, the first infrared heating unit 201 includes infrared heating tubes arranged in parallel, wherein the distance HI between the infrared heating tube 201e of the central region and the workpiece to be heated on the base 101 is greater than that of the edge region. The infrared heating tube 201f is at a distance H2 from the workpiece to be heated on the susceptor 101, and the infrared heating tube 201f of the edge region is closer to the workpiece to be heated, thereby enhancing the heating effect of the edge region of the workpiece to be heated.

In other embodiments, the first heating unit 201 may also be a dot-shaped infrared heating lamp arranged in an array.

Specifically, in the dot-shaped infrared heating lamp arranged in the array, the dot pitch is kept uniform, so that the heating effect can be easily controlled. Alternatively, the first heating unit 201 has a central area and an edge area, and the central area and the edge area may also be disposed according to a point-like infrared heating lamp and a region of the correspondingly illuminated workpiece to be heated. In the dot-shaped infrared heating lamp arranged in the array, the dot pitch of the central region is larger than the dot pitch of the edge region, which increases the infrared density of the infrared heating lamp in the edge region, thereby enhancing the heating effect of the infrared heating lamp in the edge region.

The ultimate goal of each of the above solutions is to make the temperature of the surface to be heated as uniform as possible when the workpiece to be heated is heated and heated.

In addition, a temperature sensor 103 is disposed in the processing chamber 100 for measuring the real-time temperature of the base 101 and the workpiece to be heated, so as to monitor the temperature rising process of the workpiece to be heated and perform related control when heating.

The pretreatment apparatus further includes a venting duct 104 and an exhaust duct 105 disposed at the bottom of the processing chamber 100, connected to the processing chamber 100, wherein the venting duct is configured to pass heat transfer gas or clean into the processing chamber 100. The gas, and the exhaust conduit 105 is used to vent the processing chamber 100.

The effect of uniform heating of the workpiece to be heated is limited only by the first heating unit, and therefore the pretreatment apparatus of the present invention further includes a compensation heating unit 202 for compensating for heating the edge region of the workpiece to be heated. The compensation heating unit 202 can also be heated by infrared rays, including tubular, sheet, spherical, elliptical, columnar or dot-shaped infrared heating lamps.

The compensation heating unit 202 has a high degree of directivity, which is capable of illuminating an edge region of the workpiece to be heated with heat radiation, such as infrared rays. Multiple compensation heating units 202 can be set Around the susceptor 101, and adjusting the irradiation angle of each of the compensation heating units 202 to be heated and the distance from the workpiece to be heated, so that the same heating effect as the central area is obtained at the edge region of the workpiece to be heated, thereby achieving treatment Heat the workpiece evenly. In some embodiments of the present invention, the distance between the compensation heating unit 202 and the workpiece to be heated is closer than the distance between the first heating unit 201 and the workpiece to be heated, and the heating effect of the edge region of the workpiece to be heated may be further enhanced.

As shown in FIG. 3, in a specific embodiment, the compensation heating unit includes: an infrared heating lamp 202a and a mirror 202b, and the mirror 202b is configured to reflect infrared rays generated by the infrared heating lamp 202a to the workpiece to be heated. The edge area. The mirror 202b is disposed on the other side of the infrared heating lamp 202a with respect to the direction of the base. Depending on the type of infrared light source, the mirror 202b can be fabricated as a concave mirror, a cylindrical mirror or a planar mirror. The mirror 202b is rotatable about the infrared heating lamp 202a. The compensation infrared heating unit adjusts the position of the mirror 202b relative to the infrared heating lamp 202a, thereby adjusting the reflection direction of the infrared line generated by the mirror 202b to the infrared heating lamp 202a, thereby realizing directional infrared radiation. On the other hand, the mirror 202b also improves the utilization efficiency of the infrared rays generated by the infrared heating lamp 202a, and can enhance the heating effect of the compensation infrared heating unit.

In addition to the structure shown in the above embodiment, other directivity radiation irradiation devices having directivity can also be used as the compensation infrared heating unit of the present invention. The compensation heating unit of the present invention is not limited to the above embodiment.

In order to meet the rapid warm-up preheating requirement of a large-area glass substrate, the present invention also provides a pretreatment method using the above pretreatment apparatus. 4 is a schematic diagram showing the basic flow of the pretreatment method, and FIGS. 5 to 8 are schematic diagrams showing the steps of pretreating the glass substrate using the above pretreatment method. The embodiments of the present invention are described in detail in conjunction with the above drawings.

First, step S101 is performed, and the workpiece to be heated is carried on the base;

The workpiece to be heated in this embodiment is a glass substrate 300. As shown in FIG. 4, the glass substrate 300 is placed on the susceptor 101 and fixed. Typically as an intermediate part of the thin film deposition process, the pretreatment apparatus is placed in front of the deposition apparatus on the production line. The glass substrate 300 is fed into the processing chamber 100 from the pre-processing apparatus side valve 100a by a mechanical transfer device, and is transferred from the other side wide door 100b to the deposition apparatus after the warm-up is completed. The base 101 can be coupled to the mechanical transfer device. Further, a gap may be formed between the susceptor 101 and the glass substrate 300 carried thereon by providing a groove on the bearing surface of the susceptor 101 or forming a support structure protruding from the surface of the susceptor. Step S102 is performed to exhaust the processing chamber to form a vacuum environment in the processing chamber. As shown in FIG. 5, the valve 100a for sealing the glass substrate 300 and the valve 100b are closed on the processing chamber 100, while keeping the ventilation duct 104 closed. The processing chamber 100 is vented through an exhaust conduit 105 such that a vacuum environment is created within the processing chamber 100.

Step S103 is performed to uniformly heat the central region and the edge region of the workpiece to be heated. As shown in Fig. 6, the first heating unit 201 and the compensation heating unit 202 are turned on to heat the central region and the edge region of the glass substrate, respectively. Specifically, the reflection angle of the mirror 202b in the compensation heating unit 202 is adjusted, and the infrared ray generated by the infrared heating lamp 202a is reflected to the edge region of the glass substrate 300, so that the edge region of the glass substrate 300 is obtained the same as the central region. Heating effect. The temperature throughout the glass substrate 300 is kept rising at the same time.

In this embodiment, since the glass substrate 300 is a transparent material and the susceptor 101 is a carbon or silicon carbide susceptor, when the two are irradiated with infrared rays of the same intensity, the absorbed energy is not the same. Since the infrared ray is easily transmitted directly on the glass substrate 300, the temperature rise rate of the glass substrate 300 is smaller than that of the susceptor 101 during the above heating. If the heating of the glass substrate 300 is directly raised to the target temperature, the temperature of the base 101 at this time will be greater than the target temperature. After the heating is stopped, the temperature of the glass substrate 300 will exceed the target temperature due to heat transfer between the susceptor 101 and the glass substrate 300. Therefore, in the actual preheating process, the temperature of the glass substrate 300 and the susceptor 101 at the time of stopping the heating should be calculated based on the target temperature and the difference in specific heat capacity between the glass substrate 300 and the susceptor 101.

The preprocessing method in this embodiment further includes the following steps:

Step S104: After the workpiece to be heated and the susceptor are respectively heated to the first temperature and the second temperature, the heating is stopped;

Specifically, the magnitudes of the first temperature T1 and the second temperature T2 are set in advance. It is assumed that: the initial temperature of the glass substrate 300 and the susceptor 101 is both TO; the specific heat capacity of the glass substrate 300 is C1, the mass is M1; the specific heat capacity of the susceptor 101 is C2, the mass is M2; During the operation of the heating unit 201 and the compensation infrared heating unit 202, the temperature rise rates of the glass substrate 300 and the susceptor 101 are Vtl and Vt2, respectively, and Vtl <Vt2; and the target temperature is T. In the ideal state, the above parameters have the following relationship:

AQ = (T - T _x ) , C, = (Τ ₂ - T)M ₂ C ₂ ( 7 )·

Replacement page (Article 26) Wherein the formula (1) indicates that the heating time of the glass substrate 300 and the susceptor 101 is t; and the formula (2) indicates the heat absorbed by the glass substrate 300 during the heat transfer of the glass substrate 300 and the susceptor 101 after the heating is stopped. It should be equal to the heat released by the susceptor 101, both of which is ^Δ 2 .

In the above parameters, the temperature increase rate of the glass substrate 300 and the susceptor 101 is determined by the absorption capacity of the materials of the two materials, and the ratio is approximately constant; the temperature can be adjusted according to factors such as the warm-up time and the target temperature for preheating. In consideration, the temperature increase rate is adjusted by adjusting the intensity of the infrared rays generated by the first heating unit 201 and the compensation heating unit 202.

After determining the temperature increase rate of the glass substrate 300 and the susceptor 101, it is easy to calculate the values of the first temperature T1, the second temperature Τ2, and the required heating time according to the above formula. Preferably, the first temperature is greater than or equal to 170 ° C and less than or equal to 180 ° C, the second temperature is greater than or equal to 220 ° C and less than or equal to 230 ° C, and the target temperature is greater than or equal to 190 ° C and less than or equal to 210 ° (: As a more preferred embodiment, the first temperature T1 is 180° C. The second temperature T2 is 220° (:, the target temperature T is 200 ° C.

However, in actual operation, since the temperature rise process of the glass substrate 300 and the susceptor 101 may be fluctuating rather than a uniform speed process, the calculated heating time t as the actual heating time is not accurate. In order to reduce the error, the temperature of the glass substrate 300 and the susceptor 101 can be monitored in real time by the temperature sensor 103 disposed in the processing chamber 100. When the glass substrate 300 reaches the first temperature T1 and the susceptor 101 reaches the second temperature Τ2, the first heating unit 201 and the compensation heating unit 202 are turned off, and the heating of the glass substrate 300 and the susceptor 101 is stopped.

Step S105 is performed, and a heat transfer gas is introduced into the processing chamber, so that the workpiece to be heated and the base reach the target temperature by heat transfer.

Since the glass substrate 300 and the susceptor 101 are difficult to fit closely, the heat transfer speed between the two is slow in a vacuum environment. As shown in Fig. 7, in order to speed up the heat transfer rate and improve the heat source utilization efficiency, after the heating is stopped, the air duct 104 is opened, and the heat transfer gas is introduced into the processing chamber 100. The heat transfer gas will fill the processing chamber 100 and enter the gap between the glass substrate 300 and the susceptor 101. Since there is a temperature difference between the glass substrate 300 and the susceptor 101, the heat transfer gas easily forms convection in the gap, so that the glass substrate 300 and the susceptor 101 can perform rapid heat transfer by the heat transfer gas. The heat transfer gas may include hydrogen, nitrogen, helium or any other inert gas. Preferably, the heat transfer gas contains helium having a large heat capacity.

It should be pointed out that although the heat transfer gas also absorbs part of the heat, due to the gas quality

Replacement page (Article 26) The amount is much smaller than the mass of the glass substrate 300 and the susceptor 101, so that the heat loss during the above heat transfer is negligible. The glass substrate 300 and the susceptor 101 can still reach the target temperature after the heat transfer is completed.

As an alternative, after the preheating of the glass substrate 300 is completed, a cleaning gas having a reducing property may be introduced into the processing chamber, and the cleaning gas is reduced in reaction with the organic impurities on the glass substrate 300 in a high temperature environment. And carrying the reaction product and the heat transfer gas through the exhaust duct 105 - and discharging, thereby achieving the cleaning process of the glass substrate 300.

As a preferred embodiment, hydrogen may be selected as both a heat transfer gas and a cleaning gas, which functions as a heat transfer during the preheating process of the glass substrate 300, and simultaneously reduces the organic impurities on the glass substrate in a high temperature environment. The reaction is carried out, and after the end of the pretreatment, the reaction product is carried out from the exhaust pipe 105 to serve as a cleaning action. Therefore, the above additional cleaning process steps can be omitted.

Although the invention has been disclosed above in the preferred embodiments, the invention is not limited thereto. Any changes and modifications may be made by those skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be determined by the scope defined by the claims.

Replacement page (Article 26)

Claims

Rights request

A pretreatment apparatus, comprising: a processing chamber, a pedestal disposed in the processing chamber for carrying a workpiece to be heated; and a workpiece disposed opposite to the workpiece to be heated and located above the workpiece to be heated a first heating unit; a compensation heating unit disposed around the base for compensating for heating an edge region of the workpiece to be heated.

2. The pretreatment apparatus according to claim 1, wherein the first heating unit is heated by infrared rays.

3. The pretreatment apparatus according to claim 2, wherein the first heating unit comprises a tubular, sheet, spherical, elliptical, columnar or dot-shaped infrared heating lamp.

4. The pretreatment apparatus according to claim 2, wherein the compensation heating unit is heated by infrared rays.

The pretreatment apparatus according to claim 4, wherein the compensation heating unit comprises a tubular, sheet, spherical, elliptical, columnar or dot-shaped infrared heating lamp.

6. The pretreatment apparatus according to claim 5, wherein the compensation heating unit further comprises a mirror for reflecting infrared rays generated by the infrared heating lamp to an edge region of the workpiece to be heated .

7. The pretreatment apparatus according to claim 4, wherein a distance of the compensation heating unit from the workpiece to be heated is closer than a distance between the first heating unit and the workpiece to be heated.

The pretreatment apparatus according to claim 5 or 7, wherein the susceptor is a carbon or silicon carbide susceptor.

9. The pretreatment apparatus according to claim 8, wherein a heater is disposed in the base.

10. A pretreatment apparatus according to claim 9, wherein the heater is a resistance wire, a quartz heating tube or a ceramic heating sheet.

11. The pretreatment apparatus according to claim 8, wherein the surface of the base has a support structure of a recess or protrusion such that a gap is formed between the base and the workpiece to be heated carried by the base.

12. The pretreatment apparatus according to claim 3, wherein the first heating unit comprises a plurality of infrared heating tubes arranged at intervals.

13. The pretreatment apparatus according to claim 12, wherein each of the infrared heating tubes The spacing between the two is equal and the ends are flush.

The pretreatment apparatus according to claim 12, wherein the intervals between the infrared heating tubes are equal, and the intervals are arranged in a staggered arrangement.

The pretreatment apparatus according to claim 12, wherein the first heating unit has a central area and an edge area, and a distance between infrared heating tubes of the central area is higher than infrared heating of the edge area The spacing between the tubes is large.

The pretreatment apparatus according to claim 15, wherein the distance between the infrared heating tube of the central region and the workpiece to be heated is larger than the large distance between the infrared heating tube of the edge region and the workpiece to be heated.

17. The pretreatment apparatus according to claim 3, wherein the first heating unit comprises a dot-shaped infrared heating lamp arranged in an array.

18. The pretreatment apparatus according to claim 17, wherein the dot-shaped infrared heating lamps arranged in the array have the same pitch.

The pre-processing apparatus according to claim 17, wherein the first heating unit has a central area and an edge area, and wherein the dot-shaped infrared heating lamp arranged in the array has a dot pitch of the central area greater than an edge The dot pitch of the area.

20. The pretreatment apparatus according to claim 1, wherein a temperature sensor is disposed in the processing chamber for measuring a temperature of the susceptor and a workpiece to be heated.

21. The pretreatment apparatus according to claim 1, further comprising an intake passage and an exhaust passage connected to the processing chamber at a bottom of the processing chamber, the intake passage being configured to pass into the processing chamber A heat transfer gas or a cleaning gas is used to vent the process chamber.

22. The pretreatment apparatus according to claim 21, wherein the heat transfer gas comprises hydrogen, nitrogen, helium or any other inert gas.

23. The pretreatment apparatus according to claim 21, wherein the cleaning gas comprises hydrogen.

A pretreatment method using the pretreatment apparatus according to any one of claims 1 to 23, comprising: carrying a glass substrate to be heated on a susceptor; and using the first heating in a vacuum environment The unit and the compensation heating unit perform uniform heat of the mouth in the central region and the edge region of the workpiece to be heated.

The pretreatment method according to claim 24, wherein the compensation heating is used The unit heating includes reflecting thermal radiation to an edge region of the workpiece to be heated.

The pre-processing method according to claim 24, further comprising: setting the first temperature and the second temperature, stopping when the workpiece to be heated and the base are respectively heated to the first temperature and the second temperature Heating

The pretreatment method according to claim 26, wherein the susceptor is a carbon susceptor or a silicon carbide susceptor.

The pretreatment method according to claim 27, wherein the workpiece to be heated has a gap between the workpiece and the base.

The pretreatment method according to claim 26, wherein the heat transfer gas to be introduced comprises hydrogen gas, nitrogen gas, helium gas or any other inert gas.

The pre-processing method according to claim 26, wherein the first temperature is greater than or equal to 170 ° C and less than or equal to 180 ° C, and the second temperature is greater than or equal to 220 ° C and less than or equal to 230 ° C. The target temperature is 190 ° C or more and 210 ° C or less.

The pretreatment method according to claim 24, further comprising: supplying a cleaning gas having a reducing property to the processing chamber to perform a cleaning process on the heated workpiece.

The pretreatment method according to claim 31, wherein the cleaning gas comprises hydrogen.