200933778 九、發明說明： 【發明所屬之技術領域】 本發明係關於一基板加熱裝置，且更特定言之，係關於 用於預加熱經表面處理或其上沈積一薄膜之一大尺寸基板 之一基板加熱裝置。 【先前技術】 . 一般而言，因為大尺寸基板具有慢的溫度增加速度，所 以在對其進行主處理前於預加熱腔室（即，基板加熱裝置） 〇 中將其加熱至處理溫度。即，在將未加熱基板載入至一腔 至以用於主處理之情況下，需要額外處理時間以用於加熱 該基板。此外，若將低溫基板載入至高溫主腔室中，則該 基板可ab欠到熱損害並降低該主腔室之内部溫度。 因此，依據相關技術，提供圖1中說明的基板加熱裝 置’其用於預加熱該基板。 參考圖1，傳統基板加熱裝置包含一真空腔室丨、佈置於 該真空腔室1之下部部分以支撐一基板2之一基板支撐物3 及佈置於該真空腔室1之上部部分以加熱放置在該基板支 撐物3上之該基板2的一燈加熱器4。傳統基板加熱裝置藉 由將載入基板2放置於該基板支撐物3上並使用佈置於該基 板2上之該燈加熱器4加熱該基板2而實行預加熱處理。 然而，在該傳統基板加熱裝置中，在於該基板2上形成 一薄膜的情況下，該薄膜早於該基板2受到加熱，因此引 起基板2未受到適當加熱之問題。 近年來，使用其中在玻璃基板上形成預定圖案且在包含 133072.doc 200933778 該預定圖案之玻璃基板上形成薄膜的厚特殊玻璃基板來製 造太陽能電池。當使用以上說明的傳統基板加熱裝置加熱 該厚特殊玻璃基板時，來自該燈加熱器4之輻射熱早於該 玻璃基板到達具有極佳光吸收率之薄膜《因此，在該薄膜 之表面上吸收大多數輻射熱以使得無法適當實行玻璃基板 之加熱。因此’接收大量輻射熱之薄膜的溫度變得較高且 玻璃基板之溫度變得相對較低，從而在該基板與該薄膜之 間由於其間之溫度偏差而引起較大熱應力。此類熱應力引 起透過其後處理而製造的太陽能電池之效率降級的一問 題。此外，當加熱大尺寸基板時，該基板可藉由該基板之 中心區域與邊緣區域之間的溫差而受到扭曲或破壞。 【發明内容】 技術問題 本發明提供一基板加熱裝置，其中，一燈加熱器係佈置 於一基板下以使得來自該燈加熱器之熱均勻傳輸至該基板 之底部’因而均勻加熱一大尺寸基板（增加其溫度）並減少 該基板與形成於其上之膜之間的溫度偏差。 技術解決方式 依據本發明之一態樣，一基板加熱裝置包含一腔室、經 組態以支撐具有形成於其頂面上之一薄膜之至少一基板的 一基板支撐單元，以及佈置於鄰近該基板之該後表面之一 區域中的至少一加熱單元，其中該加熱單元包含配置於該 基板下之複數個反射單元、佈置於該複數個反射單元内的 至少一燈加熱單元以及佈置於該燈加熱單元上之一短波長 133072.doc -8 - 200933778 阻隔層。 該短波長阻隔層可藉由在—透明基板上塗布具有陰霜之 一光阻隔膜而製造，或藉由採用—印刷網版方法在該透明 基板上塗布具有光阻隔特性之一膜而製造，或藉由採用一 真空沈積方法在該透明基板上沈積具有陰霜之一薄膜而製 造。 該短波長阻隔層可阻隔近似35〇 nm或更少在近似仂％至 近似80%之一範圍内的光。 該反射單元之每一者可包含以一v形配置之鏡。 該專反射單元之該等鏡可具有不同斜率。 可將該複數個反射單元配置在與該基板之後表面平行的 一方向中，且佈置於該基板下的該等反射單元内之該等鏡 的該等斜率當從該基板之該後表面的一中心區域進行至其 一邊緣區域時逐漸增加。 可將該複數個反射單元配置在與該基板之後表面平行的 一方向中，且佈置於該基板下的該等反射單元内之該等燈 加熱單元的數目當從該基板之該後表面的一中心區域進行 至其一邊緣區域時逐漸增加。 該短波長阻隔層可具有一板形狀以覆蓋其中提供該等燈 加熱單元之該複數個反射單元。 該基板加熱裝置可進一步包含一氣體供應單元，其經組 態用以供應在該腔室内流動之惰性氣體。 該腔室可使用一直列垂直腔室且包含垂直配置於該腔室 内的複數個基板及佈置於該複數個基板之該等後表面下的 133072.doc -9- 200933778 複數個加熱單元。 有利效應 如以上說明’藉由將該燈加熱單元提供於其中在其頂面 上形成該薄膜或圖案之該基板下以及將熱能供應至該基板 之該後表面’可以防止該薄臈效率之降級，例如由於熱源 引起的形成於該基板之頂面上的薄膜之降級以及由於該基 板與該薄膜之間的溫度偏差而引起的該薄膜之剝落。 此外，熱flb在該基板之該後表面的中心區域上廣泛展開 且熱能聚焦在該基板之邊緣區域，因而均勻加熱大尺寸基 板，即增加其溫度。 【實施方式】 圖2係依據本發明之一具體實施例之一基板加熱裝置之 一橫截面圖。 圖3至5係依據本發明之具體實施例的該基板加熱裝置之 修改的橫截面圖。 參考圖2，依據本發明之具體實施例的該基板加熱裝置 包含一腔室100、支撐一基板10之一基板支撐單元200及佈 置於該基板10下的一加熱單元300。該加熱單元300包含複 數個反射單元310、分別佈置於該複數個反射單元310内之 複數個燈加熱單元320及佈置於該燈加熱單元320上的一短 波長阻隔層330。 該腔室100包含一中空腔室體110及覆蓋該腔室體之 一腔室蓋120。以一柱子形狀形成具有一開放上侧及一空 内側之該腔室體110。即，該腔室體110具有一底部表面及 133072.doc •10· 200933778 從該底部表面之邊緣突出的側壁。取決於該腔室ι〇〇之形 狀，該腔室體110之底部表面可具有各種形狀，例如多角 形形狀、圓形形狀或橢圓形形狀。由該腔室體11〇之側壁 及底部表面來界定反應空間。將該腔室蓋12〇連接至該腔 至體110以密封該反應空間。該腔室蓋120用作該腔室1〇〇 之頂壁。此外，將該腔室蓋120與該腔室體110耦合以使得 可將其敞開並閉合。 儘管未顯示’但在該腔室1〇〇之一側提供載入並卸載基 板之一敞開/閉合埠。此外，儘管未顯示，但依據此具體 實施例之該加熱腔室100可透過該敞開/閉合埠連接至一處 理腔室或傳送該基板之一傳送腔室的一侧。透過以上安 裝’低溫基板可在載入至該處理腔室前進行預加熱。 該基板支撐單元200包含支撐該基板10之複數個基板支 撐銷。該複數個基板支撐銷支撐該基板10之後表面。 用於此具體實施例中之該基板1〇係一大尺寸特殊基板。 即’具有形成於其上之凸凹圖案之圖1的基板係用作特殊 基板且層（等）可進一步形成於該凸凹圖案上。作為特殊基 板’使用由（例如）破璃或樹脂形成的透明基板。在此具體 實施例中，用於製造太陽能電池之玻璃基板係用作基板 10°在此情況下’山形凸凹圖案可形成於該玻璃基板之頂 面上且一透明電極可形成於其中形成凸凹圖案之該玻璃基 板上。 因為凸凹圖案或需要層形成於該基板1〇之頂面上，所以 其中未形成該凸凹圖案或需要層之該基板的後表面（即， 133072.doc 200933778 底部表面）可由該基板支撐銷支撐。 在此具體實施例中，使用複數個基板支撐銷之基板支撐 單元200可在該基板1〇與該基板支撐單元2〇〇之間達到點接 觸。以此方式’當加熱該基板10時，可最小化由於該基板 支推卓元200引起的熱變更’且可以最小化由於該基板支 擇單元200引起的該加熱單元300内之該燈加熱單元320之 輻射熱的阻隔。 該基板支樓單元200之該基板支樓銷可上升並下降。因 此，該複數個基板支撐銷在將該基板1〇載入至加熱腔室 100時下降並接著上升以在完成該基板1〇之載入時支撐該 基板10。在完成該基板1〇之加熱後，該複數個基板支撐銷 再次下降以促進該基板10的卸載。為此目的，該基板支撐 單元200包含一分離驅動器用於將該複數個基板支撐銷向 上及向下移動。 將該加熱單元300安裝在該基板10下以均勻加熱該基板 1 0之所有側面。如以上說明’該加熱單元3〇〇包含複數個 反射單元310、複數個燈加熱單元320及短波長阻隔層 330 ° 該加熱單元300包含將從該燈加熱單元32〇輻射之光反射 朝向該基板10之後表面的該複數個反射單元31〇。在圖2 中，k供5個反射單元31〇。即，在該基板1〇之後表面的一 中心區域提供一反射單元31〇;在該基板1〇之後表面的一 邊緣區域提供兩個反射單元31〇 ;且在提供於該中心區域 之反射單元310與提供於邊緣區域之反射單元31〇之間提供 133072.doc -12- 200933778 兩個反射單元310。顯而易見地，本發明不限於此具體實 施例且該加熱單元300可包含較少或較多的反射單元310。 例如，像圖3與5之修改，可提供7個數目的反射單元310 » 反射單元310的數目可取決於欲加熱之基板1〇的大小及該 燈加熱單元320之加熱能力而改變。 在提供於該基板10之後表面下的該複數個反射單元3 10 之間提供支撐該基板10之後表面的基板支撐單元200。 該複數個反射單元310之每一者包含以v形配置之鏡311 與312。在此情況下，如圖2中說明，該複數個反射單元 310之每一者包含從右上端朝向左下端傾斜之一第一鏡311 及從左上端向右下端傾斜之一第二鏡3 12。顯而易見地， 本發明不限於此具體實施例且該反射單元3 10可為以V形整 合形成之一鏡。 該反射單元310内之第一鏡311與第二鏡312的斜率可彼 此相同。顯而易見地，本發明不限於此具體實施例且若需 要該等斜率可彼此不同。如圖2中說明，較佳地，每一反 射單元310内之該等鏡内的斜率係彼此相同。 本發明不限於此具體實施例且該等反射單元31〇内之該 等鏡的斜率可以係彼此不同，如圖3與5之修改中說明。 即，該等反射單元310内之該等鏡的斜率可從該基板1〇之 後表面的中心區域朝向邊緣區域增加。該斜率表示鏡311 及312與該腔室1〇〇之底部表面之間的角。如圖3與$中說 明’佈置於該基板10之後表面的中心區域下之該反射單元 310内的鏡311及312可具有最小斜率且佈置於該基板1〇之 133072.doc •13- 200933778 後表面的邊緣區域下之該反射單元310内的鏡3ΐι及3i2可 具有最大斜率。 該燈加熱單元320係佈置於此範例性具體實施例之反射 單元310内《因此，由於在以上說明的修改中佈置於該等 反射單元3 10内之鏡的斜率差，廣泛展開由佈置於該基板 10之後表面的中心區域下之反射單元31〇反射的光並聚 焦由佈置於該基板1〇之後表面的邊緣區域下之反射單元 3 10反射的光，因而均勻加熱該基板1〇之中心區域與邊緣 區域。與該基板10之中心區域相比較，該基板1〇之邊緣區 域係鄰近具有低於該基板1〇之加熱溫度的溫度之元件（就 像該腔室100之側壁）。因此，當將均勻熱能施加於該基板 10之中心區域與邊緣區域時，該熱能在朝向該基板1〇之邊 緣區域進行時受到低溫元件（即，腔室）的吸收。在此範例 性具體實施例中，由該反射單元310反射之熱能在中心區 域廣泛展開且在其朝向邊緣區域進行時逐漸聚焦以補償由 在該基板10之邊緣區域附近吸收的熱能。以此方式，可將 熱能均勻施加於該基板10。 將該複數個反射單元310配置在與該基板10之後表面平 行的該腔室100之底部表面。假定將佈置於該反射單元31〇 之右上端的第一鏡與佈置於左上端的第二鏡之間的距離定 義為該反射單元310之寬度，則該等反射單元31〇之寬度可 以係彼此相同，如圖2中說明。本發明不限於此具體實施 例且該等反射單元31〇之寬度可從中心區域朝向邊緣區域 逐漸減小’如圖3與圖5中說明。透過此組態，如以上說 133072.doc -14· 200933778 明，可在中心區域廣泛展開該熱能且可在邊緣區域聚焦該 熱能。 在該4反射單元310之每一者中提供至少一燈加熱單元 320。提供於該反射單元31〇内之該等燈加熱單元32〇的數 目可從該基板10之後表面的中心區域朝向邊緣區域逐漸增 加。即，如圖2中說明，在佈置於該中心區域下之反射單 元310内提供一燈加熱單元320;在佈置於該邊緣區域下之 反射單元310内提供三個燈加熱單元320;以及在佈置於該 中心區域下之反射單元310與佈置於該邊緣區域下之反射 單元310之間的反射單元31〇内提供兩個燈加熱單元32〇。 在此具體實施例中，此類組態可當從該基板10之該後表面 的中心區域進行至其邊緣區域時逐漸增加許多熱能。如以 上說明，此類組態可均勻地向大尺寸基板1 〇之中心區域與 邊緣區域提供熱能。顯而易見地，本發明不限於此範例性 具體實施例且可如圖5之修改中說明在一反射單元310内提 供一燈加熱單元320。 該燈加熱單元320代表一光學加熱單元並使用一燈加熱 器。提供於該複數個反射單元310内的該等燈加熱單元320 同時經驅動以向該基板10之後表面提供輻射熱。顯而易見 地，本發明不限於此範例性具體實施例且在該等反射單元 310内的該複數個燈加熱單元320可經個別驅動。 該加熱單元300包含於該複數個燈加熱單元320上之短波 長阻隔層330。如圖2中說明，以板形形成該短波長阻隔層 330以覆蓋其中提供至少一燈加熱單元320之該複數個反射 133072.doc 15 200933778 單元310。該短波長阻隔層3 30控制該燈加熱單元320之輸 出光的波長因而用以均勻加熱該基板10及形成於該基板1〇 上之層11。在此範例性具體實施例中，該燈加熱單元320 係佈置於該基板1〇之後表面下以使得該熱能首先施加於該 基板10之後表面因而用以防止該熱能由形成於該基板10上 之層11吸收。以此方式’可在短時間加熱該大尺寸厚基板 10 〇 該短波長阻隔層330透過光吸收、繞射及反射阻隔具有 (例如）350 nm或更少之波長的短波長光之一部分。 藉由在一透明基板上塗布光阻隔膜來製造該短波長阻隔 層330。在此情況下，該光阻隔膜使用具有陰霾且可在高 溫下耐受之一膜。依據另一具體實施例，藉由使用一印刷 網版方法在一透明基板上塗布具有光阻隔特性之一層來製 造該短波長阻隔層330。即，將具有陰霾之液體材料使用 印刷網版方法塗布在該基板上並接著經熱處理以製造該短 波長阻隔層330。此外’本發明不限於此等具體實施例， 且可藉由使用一真空沈積方法在該透明基板上形成具有陰 霾之一薄膜來製造該短波長阻隔層330。作為真空沈積方 法’可使用化學汽相沈積（Chemical Vapor Deposition， CVD)或金屬有機化學汽相沈積（Metal-Organic Chemical Vapor Deposition，M0CVD)並在該M0CVD程序期間有效使 用具有光吸收特性之一前驅物。在此情況下，各種層以及 矽層可用作具有陰霾之薄膜。 該短波長阻隔層330之透光率可根據陰霾量而變化。 133072.doc -16 - 200933778 該燈加熱單元320發射具有短波長至長波長的光。具有 短波長之光具有高熱能及極佳繞射與反射特性。另一方 面’具有長波長之光比具有短波長之光有更低熱能，但具 有極佳透射率。因此’當將該燈加熱單元32〇佈置於該基 板10之後表面下時，藉由具有高能量之短波長的光首先加 熱該基板10之下部區域並藉由具有低能量之長波長的光隨 後加熱該基板10之上部區域。即，該短波長光加熱其中具 有高能量之該短波長光所到達的光接觸表面，但其短波長 使得其相對較難將溫度均勻增高至其中該光無法到達之相 對侧。與該短波長光相比較，該長波長光未向該光接觸表 面供應高能量’但其由於長波長而深深地穿透以使得其中 該光無法到達之相對側的溫度均勻增加。 如以上說明，在此範例性具體實施例中，在該燈加熱單 元320與該基板10之間的空間中提供該短波長阻隔層330以 便阻隔從該燈加熱單元32〇發射之光的短波長之一部分。 因此，可均勻加熱該基板10之後表面與頂面以及形成於該 基板10上之層11。即，藉由在該基板1〇之厚度方向中阻隔 供應至該基板10之下部區域的光之短波長的部分，使施加 於該基板10之下部區域的光能數量與施加於該基板1〇之上 部區域的光能數量均勻。該短波長阻隔層330可阻隔施加 光之短波長的約40至80%，例如3 50 nm或更少。如以上說 明，可藉由控制該短波長阻隔層330之陰霾量來調整波長 阻隔度。 例如，在該短波長阻隔層330阻隔從該燈加熱單元32〇供 133072.doc •17· 200933778 應之光的短波長之約50%的情況下，將具有50%的原始能 量之該短波長光供應至該基板10之下部區域且將具有不變 能量之長波長光供應至該基板10的上部區域。以此方式， 減少供應至該基板10之下部區域的高能量之短波長光以具 有與低能量之長波長光的能量位準類似的能量位準，因此 在該基板10之厚度方向中達到均勻加熱。 •該短波長阻隔層330阻隔從該燈加熱單元320施加之短波 長光且亦由短波長光加熱。因此，亦可由加熱的短波長阻 Ο 隔層330加熱該基板10。 如圖4中說明，可藉由使用供應至該腔室1〇〇内的惰性氣 體之對流現象來均勻加熱該基板之上部與下部區域。即， 在該基板之下部區域加熱供應至該腔室1〇〇内的惰性氣體 並將該熱的惰性氣體移動至該基板之上部區域以加熱該上 部區域。對此，圖4中說明的具體實施例進一步包含將惰 性氣體供應至該腔室100之一氣體供應單元4〇〇。 此外，如圖5中說明，在直列垂直腔室1〇〇中，可使用兩 個加熱單元300同時加熱兩個基板10。即，配置該兩個基 板10以使得其後表面彼此面對且將該兩個加熱單元3 〇〇配 置在該兩個基板10之後表面之間的一空間中。在此類狀態 中，可藉由加熱單元300個別加熱該等基板10。在此情況 下’基板10之加熱可使用輻射能量或惰性氣體的對流能 量。 儘管已參考特定具鱧實施例說明本發明之基板加熱裝 置’但其不限於此特定具體實施例。因此，熟習技術人 133072.doc -18 - 200933778 士將易於瞭解可對其進行各種修改及改變而不脫離附隨申 *月專利範圍所定義的本發明之精神與範疇。 【圖式簡單說明】 圖1係一傳統基板加熱裝置之一橫截面圖； 圖2係依據本發明之一具體實施例之一基板加熱裝置之 一橫截面圖；以及 圖3至5係依據本發明之具體實施例的該基板加熱裝置之 修改的橫截面圖。 © 【主要元件符號說明】 1 真空腔室 2 基板 3 基板支撐物 4 燈加熱器 10 基板 11 層 100 腔室 110 中空腔室體 120 腔室蓋 200 基板支撐單元 300 加熱單元 310 反射單元 311 鏡 312 鏡 320 燈加熱單元 133072.doc -19· 200933778 330 短波長阻隔層 400 氣體供應單元200933778 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD The present invention relates to a substrate heating apparatus, and more particularly to one of a large-sized substrate for preheating a surface treatment or depositing a film thereon Substrate heating device. [Prior Art] In general, since a large-sized substrate has a slow temperature increasing speed, it is heated to a processing temperature in a preheating chamber (i.e., substrate heating device) 前 before main processing thereof. That is, in the case where the unheated substrate is loaded into a cavity for main processing, additional processing time is required for heating the substrate. Further, if the low temperature substrate is loaded into the high temperature main chamber, the substrate can owe heat damage and lower the internal temperature of the main chamber. Therefore, according to the related art, the substrate heating device illustrated in Fig. 1 is provided for preheating the substrate. Referring to FIG. 1, a conventional substrate heating apparatus includes a vacuum chamber 丨 disposed at a lower portion of the vacuum chamber 1 to support a substrate support 3 of a substrate 2 and a portion disposed above the vacuum chamber 1 for heating A lamp heater 4 of the substrate 2 on the substrate support 3. The conventional substrate heating apparatus performs a preheating process by placing the loading substrate 2 on the substrate support 3 and heating the substrate 2 using the lamp heater 4 disposed on the substrate 2. However, in the conventional substrate heating apparatus, in the case where a film is formed on the substrate 2, the film is heated earlier than the substrate 2, thereby causing a problem that the substrate 2 is not properly heated. In recent years, solar cells have been fabricated using a thick special glass substrate in which a predetermined pattern is formed on a glass substrate and a film is formed on a glass substrate containing the predetermined pattern of 133072.doc 200933778. When the thick special glass substrate is heated by the conventional substrate heating device described above, the radiant heat from the lamp heater 4 reaches the film having an excellent light absorptivity earlier than the glass substrate. Therefore, the absorption on the surface of the film is large. Most of the radiant heat is such that heating of the glass substrate cannot be properly performed. Therefore, the temperature of the film which receives a large amount of radiant heat becomes higher and the temperature of the glass substrate becomes relatively lower, so that a large thermal stress is caused between the substrate and the film due to the temperature deviation therebetween. Such thermal stress causes a problem of the efficiency degradation of solar cells fabricated by subsequent processing. Further, when a large-sized substrate is heated, the substrate can be distorted or broken by a temperature difference between a central portion and an edge region of the substrate. SUMMARY OF THE INVENTION The present invention provides a substrate heating apparatus in which a lamp heater is disposed under a substrate to uniformly transfer heat from the lamp heater to a bottom portion of the substrate, thereby uniformly heating a large-sized substrate. (increasing its temperature) and reducing the temperature deviation between the substrate and the film formed thereon. Technical Solution According to one aspect of the present invention, a substrate heating apparatus includes a chamber configured to support a substrate supporting unit having at least one substrate formed on a film on a top surface thereof, and disposed adjacent to the substrate At least one heating unit in one of the rear surfaces of the substrate, wherein the heating unit includes a plurality of reflecting units disposed under the substrate, at least one lamp heating unit disposed in the plurality of reflecting units, and disposed on the lamp One of the heating elements is a short wavelength 133072.doc -8 - 200933778 barrier layer. The short-wavelength barrier layer can be manufactured by coating a photoresist film having a cream on a transparent substrate, or by coating a film having a light-blocking property on the transparent substrate by using a printing screen method. Or by depositing a film having one of the creams on the transparent substrate by a vacuum deposition method. The short wavelength barrier layer blocks light in the range of approximately 〇% to approximately 80%, approximately 35 〇 nm or less. Each of the reflective units can include a mirror configured in a v-shape. The mirrors of the dedicated reflection unit can have different slopes. The plurality of reflective units may be disposed in a direction parallel to a rear surface of the substrate, and the slopes of the mirrors disposed in the reflective units under the substrate are from a rear surface of the substrate The central region gradually increases as it goes to one of its edge regions. The plurality of reflective units may be disposed in a direction parallel to a rear surface of the substrate, and the number of the lamp heating units disposed in the reflective units under the substrate is from a rear surface of the substrate The central region gradually increases as it goes to one of its edge regions. The short wavelength barrier layer can have a plate shape to cover the plurality of reflective units in which the lamp heating units are provided. The substrate heating apparatus may further include a gas supply unit configured to supply an inert gas flowing in the chamber. The chamber may use a plurality of vertical chambers and a plurality of substrates disposed vertically within the chamber and a plurality of heating units disposed under the back surfaces of the plurality of substrates. 133072.doc -9- 200933778. Advantageous Effects As described above, by providing the lamp heating unit to the substrate in which the film or pattern is formed on the top surface thereof and supplying the thermal energy to the rear surface of the substrate, the thinning efficiency can be prevented from being degraded. For example, degradation of the film formed on the top surface of the substrate due to a heat source and peeling of the film due to temperature deviation between the substrate and the film. Further, the heat flb is widely spread on the central portion of the rear surface of the substrate and thermal energy is focused on the edge region of the substrate, thereby uniformly heating the large-sized substrate, i.e., increasing its temperature. [Embodiment] Fig. 2 is a cross-sectional view showing a substrate heating apparatus according to an embodiment of the present invention. 3 through 5 are modified cross-sectional views of the substrate heating apparatus in accordance with a specific embodiment of the present invention. Referring to FIG. 2, the substrate heating apparatus according to an embodiment of the present invention includes a chamber 100, a substrate supporting unit 200 supporting a substrate 10, and a heating unit 300 disposed under the substrate 10. The heating unit 300 includes a plurality of reflecting units 310, a plurality of lamp heating units 320 respectively disposed in the plurality of reflecting units 310, and a short-wavelength blocking layer 330 disposed on the lamp heating unit 320. The chamber 100 includes a hollow chamber body 110 and a chamber cover 120 that covers the chamber body. The chamber body 110 having an open upper side and an empty inner side is formed in a column shape. That is, the chamber body 110 has a bottom surface and a side wall that protrudes from the edge of the bottom surface by 133072.doc •10·200933778. Depending on the shape of the chamber, the bottom surface of the chamber body 110 may have various shapes such as a polygonal shape, a circular shape, or an elliptical shape. The reaction space is defined by the side walls and bottom surface of the chamber body 11 . The chamber lid 12 is attached to the chamber to the body 110 to seal the reaction space. The chamber cover 120 serves as the top wall of the chamber 1〇〇. Further, the chamber cover 120 is coupled to the chamber body 110 such that it can be opened and closed. Although not shown 'but one of the sides of the chamber 1 提供 provides loading and unloading of one of the substrates open/closed 埠. Moreover, although not shown, the heating chamber 100 in accordance with this embodiment can be coupled to a processing chamber or a side of a transfer chamber of the substrate through the open/closed port. Preheating can be performed prior to loading into the processing chamber by mounting the 'low temperature substrate' above. The substrate supporting unit 200 includes a plurality of substrate supporting pins that support the substrate 10. The plurality of substrate support pins support the rear surface of the substrate 10. The substrate 1 used in this embodiment is a large-sized special substrate. That is, the substrate of Fig. 1 having the uneven pattern formed thereon is used as a special substrate and a layer (etc.) can be further formed on the uneven pattern. As the special substrate, a transparent substrate formed of, for example, glass or resin is used. In this embodiment, the glass substrate used for fabricating the solar cell is used as the substrate 10°. In this case, a mountain-shaped convex-concave pattern may be formed on the top surface of the glass substrate and a transparent electrode may be formed therein to form a convex-concave pattern. On the glass substrate. Since the uneven pattern or the desired layer is formed on the top surface of the substrate 1 , the rear surface of the substrate (i.e., the bottom surface of 133072.doc 200933778) in which the uneven pattern or the desired layer is not formed may be supported by the substrate supporting pin. In this embodiment, the substrate supporting unit 200 using a plurality of substrate supporting pins can achieve point contact between the substrate 1 and the substrate supporting unit 2A. In this way, when the substrate 10 is heated, the heat change due to the substrate supporting element 200 can be minimized and the lamp heating unit in the heating unit 300 due to the substrate supporting unit 200 can be minimized. 320 radiant heat barrier. The substrate support pin of the substrate branch unit 200 can be raised and lowered. Therefore, the plurality of substrate supporting pins are lowered when the substrate 1 is loaded into the heating chamber 100 and then raised to support the substrate 10 when the loading of the substrate 1 is completed. After the heating of the substrate 1 is completed, the plurality of substrate support pins are lowered again to promote unloading of the substrate 10. To this end, the substrate support unit 200 includes a separate driver for moving the plurality of substrate support pins upward and downward. The heating unit 300 is mounted under the substrate 10 to uniformly heat all sides of the substrate 10. As described above, the heating unit 3 includes a plurality of reflecting units 310, a plurality of lamp heating units 320, and a short-wavelength blocking layer 330. The heating unit 300 includes light that is radiated from the lamp heating unit 32 toward the substrate. The plurality of reflecting units 31 of the surface after 10 are. In Fig. 2, k is provided for five reflection units 31A. That is, a reflection unit 31 is provided in a central region of the surface of the substrate 1; a reflection unit 31 is provided in an edge region of the surface after the substrate 1; and a reflection unit 310 is provided in the central region. Two reflection units 310 are provided 133072.doc -12- 200933778 with the reflection unit 31〇 provided to the edge region. Obviously, the invention is not limited to this particular embodiment and the heating unit 300 may comprise fewer or more reflective units 310. For example, like the modifications of Figures 3 and 5, seven numbers of reflecting units 310 can be provided. The number of reflecting units 310 can vary depending on the size of the substrate 1 to be heated and the heating capability of the lamp heating unit 320. A substrate supporting unit 200 supporting the rear surface of the substrate 10 is provided between the plurality of reflecting units 3 10 provided under the surface of the substrate 10 after the substrate 10 is provided. Each of the plurality of reflecting units 310 includes mirrors 311 and 312 arranged in a v shape. In this case, as illustrated in FIG. 2, each of the plurality of reflecting units 310 includes a first mirror 311 tilted from the upper right end toward the lower left end and a second mirror 3 12 tilted from the upper left end to the lower right end. . Obviously, the present invention is not limited to the specific embodiment and the reflecting unit 3 10 may be formed by forming a mirror in a V shape. The slopes of the first mirror 311 and the second mirror 312 in the reflecting unit 310 may be identical to each other. It will be apparent that the invention is not limited to this particular embodiment and that the slopes may differ from each other if desired. As illustrated in Fig. 2, preferably, the slopes within the mirrors in each of the reflecting units 310 are identical to each other. The invention is not limited to this particular embodiment and the slopes of the mirrors within the reflecting elements 31 can be different from one another, as illustrated in the modifications of Figures 3 and 5. That is, the slope of the mirrors in the reflecting units 310 may increase from a central region of the rear surface of the substrate 1 toward the edge region. This slope represents the angle between the mirrors 311 and 312 and the bottom surface of the chamber 1〇〇. The mirrors 311 and 312 in the reflective unit 310 disposed under the central region of the rear surface of the substrate 10 as shown in FIG. 3 and $ can have a minimum slope and are disposed on the substrate 1 133072.doc •13-200933778 The mirrors 3ΐ and 3i2 in the reflective unit 310 under the edge regions of the surface may have a maximum slope. The lamp heating unit 320 is disposed within the reflective unit 310 of this exemplary embodiment. "Thus, due to the difference in slope of the mirrors disposed within the reflective unit 3 10 in the modifications described above, the extensive deployment is by The light reflected by the reflecting unit 31 中心 under the central region of the rear surface of the substrate 10 and focuses the light reflected by the reflecting unit 310 disposed under the edge region of the surface of the substrate 1 ,, thereby uniformly heating the central region of the substrate 1 With the edge area. The edge region of the substrate 1 is adjacent to an element having a temperature lower than the heating temperature of the substrate 1 (as the sidewall of the chamber 100) as compared with the central region of the substrate 10. Therefore, when uniform thermal energy is applied to the central region and the edge region of the substrate 10, the thermal energy is absorbed by the cryogenic element (i.e., the chamber) while proceeding toward the edge region of the substrate 1〇. In this exemplary embodiment, the thermal energy reflected by the reflective unit 310 is widely spread in the central region and is gradually focused as it is directed toward the edge region to compensate for thermal energy absorbed by the edge region of the substrate 10. In this way, thermal energy can be uniformly applied to the substrate 10. The plurality of reflecting units 310 are disposed on a bottom surface of the chamber 100 that is parallel to the rear surface of the substrate 10. Assuming that the distance between the first mirror disposed at the upper right end of the reflecting unit 31〇 and the second mirror disposed at the upper left end is defined as the width of the reflecting unit 310, the widths of the reflecting units 31〇 may be the same as each other. As illustrated in Figure 2. The present invention is not limited to this embodiment and the width of the reflecting units 31〇 may gradually decrease from the central area toward the edge area' as illustrated in Figures 3 and 5. With this configuration, as described above, 133072.doc -14· 200933778, the thermal energy can be widely spread in the central area and can be focused on the edge area. At least one lamp heating unit 320 is provided in each of the four reflecting units 310. The number of the lamp heating units 32A provided in the reflecting unit 31A can be gradually increased from the central area of the rear surface of the substrate 10 toward the edge area. That is, as illustrated in FIG. 2, a lamp heating unit 320 is provided in the reflecting unit 310 disposed under the central region; three lamp heating units 320 are provided in the reflecting unit 310 disposed under the edge region; Two lamp heating units 32A are provided in the reflecting unit 31 between the reflecting unit 310 under the central area and the reflecting unit 310 disposed under the edge area. In this embodiment, such a configuration can gradually increase a lot of thermal energy as it progresses from the central region of the back surface of the substrate 10 to its edge region. As explained above, such a configuration uniformly supplies thermal energy to the central and edge regions of the large-sized substrate 1 . It will be apparent that the invention is not limited to this exemplary embodiment and that a lamp heating unit 320 may be provided within a reflective unit 310 as illustrated in the modification of FIG. The lamp heating unit 320 represents an optical heating unit and uses a lamp heater. The lamp heating units 320 provided in the plurality of reflecting units 310 are simultaneously driven to provide radiant heat to the rear surface of the substrate 10. It will be apparent that the invention is not limited to this exemplary embodiment and that the plurality of lamp heating units 320 within the reflecting units 310 can be individually driven. The heating unit 300 is included in the short wavelength blocking layer 330 of the plurality of lamp heating units 320. As illustrated in Figure 2, the short wavelength barrier layer 330 is formed in a plate shape to cover the plurality of reflections 133072.doc 15 200933778 unit 310 in which at least one lamp heating unit 320 is provided. The short-wavelength blocking layer 325 controls the wavelength of the output light of the lamp heating unit 320 to thereby uniformly heat the substrate 10 and the layer 11 formed on the substrate 1''. In this exemplary embodiment, the lamp heating unit 320 is disposed under the surface of the substrate 1 such that the thermal energy is first applied to the rear surface of the substrate 10 to prevent the thermal energy from being formed on the substrate 10. Layer 11 is absorbed. In this manner, the large-sized thick substrate 10 can be heated in a short time. The short-wavelength barrier layer 330 blocks a portion of short-wavelength light having a wavelength of, for example, 350 nm or less through light absorption, diffraction, and reflection. The short wavelength blocking layer 330 is fabricated by coating a photoresist film on a transparent substrate. In this case, the photoresist film uses a film having a haze and can withstand at a high temperature. According to another embodiment, the short wavelength barrier layer 330 is fabricated by coating a layer having light blocking properties on a transparent substrate using a printing screen method. Namely, a liquid material having a haze is coated on the substrate using a printing screen method and then heat-treated to fabricate the short-wavelength barrier layer 330. Further, the present invention is not limited to the specific embodiments, and the short-wavelength barrier layer 330 can be fabricated by forming a film having a cathode on the transparent substrate by using a vacuum deposition method. As a vacuum deposition method, Chemical Vapor Deposition (CVD) or Metal-Organic Chemical Vapor Deposition (M0CVD) can be used and one of the precursors having light absorption characteristics can be effectively used during the MOCVD process. Things. In this case, various layers and a layer of tantalum can be used as the film having a haze. The light transmittance of the short-wavelength barrier layer 330 may vary depending on the amount of haze. 133072.doc -16 - 200933778 The lamp heating unit 320 emits light having a short wavelength to a long wavelength. Light with short wavelengths has high thermal energy and excellent diffraction and reflection characteristics. On the other hand, light having a long wavelength has lower thermal energy than light having a short wavelength, but has excellent transmittance. Therefore, when the lamp heating unit 32 is disposed under the surface of the substrate 10, light having a short wavelength of high energy is first heated to the lower region of the substrate 10 and light having a long wavelength of low energy is subsequently The upper portion of the substrate 10 is heated. That is, the short-wavelength light heats the light-contacting surface to which the short-wavelength light having high energy reaches, but its short wavelength makes it relatively difficult to uniformly increase the temperature to the opposite side where the light cannot reach. The long-wavelength light does not supply high energy to the light-contacting surface as compared with the short-wavelength light but it penetrates deeply due to the long wavelength to uniformly increase the temperature of the opposite side where the light cannot reach. As explained above, in this exemplary embodiment, the short wavelength blocking layer 330 is provided in a space between the lamp heating unit 320 and the substrate 10 to block short wavelengths of light emitted from the lamp heating unit 32A. Part of it. Therefore, the surface and the top surface of the substrate 10 and the layer 11 formed on the substrate 10 can be uniformly heated. That is, the amount of light energy applied to the lower portion of the substrate 10 is applied to the substrate 1 by blocking a portion of the short wavelength of light supplied to the lower portion of the substrate 10 in the thickness direction of the substrate 1〇. The amount of light energy in the upper area is uniform. The short wavelength blocking layer 330 can block about 40 to 80% of the short wavelength of applied light, such as 3 50 nm or less. As described above, the wavelength rejection can be adjusted by controlling the amount of haze of the short-wavelength barrier layer 330. For example, in the case where the short-wavelength barrier layer 330 blocks about 50% of the short wavelength of light from the lamp heating unit 32, 133072.doc •17·200933778, the short wavelength will have 50% of the original energy. Light is supplied to the lower region of the substrate 10 and long-wavelength light having constant energy is supplied to the upper region of the substrate 10. In this way, the high-energy short-wavelength light supplied to the lower region of the substrate 10 is reduced to have an energy level similar to that of the low-energy long-wavelength light, thereby achieving uniformity in the thickness direction of the substrate 10. heating. • The short wavelength blocking layer 330 blocks short wavelength light applied from the lamp heating unit 320 and is also heated by short wavelength light. Therefore, the substrate 10 can also be heated by the heated short-wavelength barrier layer 330. As illustrated in Fig. 4, the upper and lower regions of the substrate can be uniformly heated by using a convection phenomenon of an inert gas supplied into the chamber 1〇〇. That is, the inert gas supplied into the chamber 1 is heated in the lower region of the substrate and the hot inert gas is moved to the upper portion of the substrate to heat the upper region. In this regard, the specific embodiment illustrated in Figure 4 further includes supplying inert gas to one of the gas supply units 4 of the chamber 100. Further, as illustrated in Fig. 5, in the in-line vertical chamber 1 , two heating units 300 can be used to simultaneously heat the two substrates 10. That is, the two substrates 10 are disposed such that their rear surfaces face each other and the two heating units 3 are disposed in a space between the surfaces of the two substrates 10. In such a state, the substrates 10 can be individually heated by the heating unit 300. In this case, the heating of the substrate 10 may use radiant energy or convection energy of the inert gas. Although the substrate heating apparatus of the present invention has been described with reference to specific embodiments, it is not limited to this specific embodiment. Accordingly, the skilled person 133072.doc -18 - 200933778 will be able to understand various modifications and changes without departing from the spirit and scope of the invention as defined by the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view of a conventional substrate heating apparatus; FIG. 2 is a cross-sectional view of a substrate heating apparatus according to an embodiment of the present invention; and FIGS. 3 to 5 are based on A modified cross-sectional view of the substrate heating apparatus of a particular embodiment of the invention. © [Main component symbol description] 1 Vacuum chamber 2 Substrate 3 Substrate support 4 Lamp heater 10 Substrate 11 Layer 100 Chamber 110 Medium chamber body 120 Chamber cover 200 Substrate support unit 300 Heating unit 310 Reflection unit 311 Mirror 312 Mirror 320 lamp heating unit 133072.doc -19· 200933778 330 short wavelength barrier layer 400 gas supply unit
133072.doc -20-133072.doc -20-