CN101681785B - 用于提高等离子体工艺中的处理均匀性的设备和方法 - Google Patents

用于提高等离子体工艺中的处理均匀性的设备和方法 Download PDF

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Publication number
CN101681785B
CN101681785B CN2008800184440A CN200880018444A CN101681785B CN 101681785 B CN101681785 B CN 101681785B CN 2008800184440 A CN2008800184440 A CN 2008800184440A CN 200880018444 A CN200880018444 A CN 200880018444A CN 101681785 B CN101681785 B CN 101681785B
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CN
China
Prior art keywords
workpiece
plasma
sacrificial body
peripheral edge
sacrificial
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Expired - Fee Related
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CN2008800184440A
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English (en)
Chinese (zh)
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CN101681785A (zh
Inventor
赵建钢
詹姆士·D·格蒂
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Nordson Corp
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Nordson Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Plasma Technology (AREA)
CN2008800184440A 2007-06-01 2008-05-23 用于提高等离子体工艺中的处理均匀性的设备和方法 Expired - Fee Related CN101681785B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US94151807P 2007-06-01 2007-06-01
US60/941,518 2007-06-01
US12/125,335 US20080296261A1 (en) 2007-06-01 2008-05-22 Apparatus and methods for improving treatment uniformity in a plasma process
US12/125,335 2008-05-22
PCT/US2008/064670 WO2008150739A1 (en) 2007-06-01 2008-05-23 Apparatus and methods for improving treatment uniformity in a plasma process

Publications (2)

Publication Number Publication Date
CN101681785A CN101681785A (zh) 2010-03-24
CN101681785B true CN101681785B (zh) 2012-05-09

Family

ID=40086939

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008800184440A Expired - Fee Related CN101681785B (zh) 2007-06-01 2008-05-23 用于提高等离子体工艺中的处理均匀性的设备和方法

Country Status (7)

Country Link
US (1) US20080296261A1 (enExample)
JP (1) JP2010529656A (enExample)
KR (1) KR20100025515A (enExample)
CN (1) CN101681785B (enExample)
DE (1) DE112008001482T5 (enExample)
TW (1) TW200905777A (enExample)
WO (1) WO2008150739A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101410706B1 (ko) 2006-08-22 2014-06-25 노드슨 코포레이션 처리 시스템에서 피가공물을 취급하기 위한 장치 및 방법
US8372238B2 (en) 2008-05-20 2013-02-12 Nordson Corporation Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes
CN102099870A (zh) * 2008-06-11 2011-06-15 因特瓦克公司 用于在太阳能电池制作中使用的专用注入系统和方法
US8749053B2 (en) * 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
WO2013070978A2 (en) 2011-11-08 2013-05-16 Intevac, Inc. Substrate processing system and method
CN103165374B (zh) * 2011-12-08 2017-05-10 中微半导体设备(上海)有限公司 一种等离子体处理装置及应用于等离子处理装置的边缘环
US9385017B2 (en) * 2012-08-06 2016-07-05 Nordson Corporation Apparatus and methods for handling workpieces of different sizes
TWI570745B (zh) 2012-12-19 2017-02-11 因特瓦克公司 用於電漿離子植入之柵極
US20210287884A1 (en) * 2018-07-30 2021-09-16 Nordson Corporation Systems for workpiece processing with plasma
CN113035680B (zh) * 2019-12-24 2024-06-14 中微半导体设备(上海)股份有限公司 用于真空设备的调平机构和等离子体处理装置
CN111180370A (zh) * 2020-02-21 2020-05-19 北京北方华创微电子装备有限公司 晶圆承载托盘及半导体加工设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6284093B1 (en) * 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
CN1723528A (zh) * 2000-10-13 2006-01-18 兰姆研究公司 用于实现均匀等离子处理的阶梯式上部电极

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4786359A (en) * 1987-06-24 1988-11-22 Tegal Corporation Xenon enhanced plasma etch
JPH0373524A (ja) * 1989-08-14 1991-03-28 Fujitsu Ltd エッチング方法
US20010049196A1 (en) * 1997-09-09 2001-12-06 Roger Patrick Apparatus for improving etch uniformity and methods therefor
US6074488A (en) * 1997-09-16 2000-06-13 Applied Materials, Inc Plasma chamber support having an electrically coupled collar ring
US6014979A (en) * 1998-06-22 2000-01-18 Applied Materials, Inc. Localizing cleaning plasma for semiconductor processing
DE29813326U1 (de) * 1998-07-29 1998-12-10 PROTEC Gesellschaft für Werkstoff- und Oberflächentechnik mbH, 57234 Wilnsdorf Verbesserte Vorrichtung zum Schutz von elektrostatischen Haltesystemen in Anlagen zur Bearbeitung von Wafern
JP2000299305A (ja) * 1999-04-16 2000-10-24 Toshiba Corp プラズマ処理装置
US6344105B1 (en) * 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
US6475336B1 (en) * 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
US6554954B2 (en) * 2001-04-03 2003-04-29 Applied Materials Inc. Conductive collar surrounding semiconductor workpiece in plasma chamber
JP2003100713A (ja) * 2001-09-26 2003-04-04 Kawasaki Microelectronics Kk プラズマ電極用カバー
US6776849B2 (en) * 2002-03-15 2004-08-17 Asm America, Inc. Wafer holder with peripheral lift ring
KR100610010B1 (ko) * 2004-07-20 2006-08-08 삼성전자주식회사 반도체 식각 장치
KR100674922B1 (ko) * 2004-12-02 2007-01-26 삼성전자주식회사 포커스 링을 냉각하는 냉각 유로를 가지는 웨이퍼지지장치
KR101410706B1 (ko) * 2006-08-22 2014-06-25 노드슨 코포레이션 처리 시스템에서 피가공물을 취급하기 위한 장치 및 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6284093B1 (en) * 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
CN1723528A (zh) * 2000-10-13 2006-01-18 兰姆研究公司 用于实现均匀等离子处理的阶梯式上部电极

Also Published As

Publication number Publication date
KR20100025515A (ko) 2010-03-09
WO2008150739A1 (en) 2008-12-11
CN101681785A (zh) 2010-03-24
TW200905777A (en) 2009-02-01
US20080296261A1 (en) 2008-12-04
JP2010529656A (ja) 2010-08-26
DE112008001482T5 (de) 2010-04-29

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Granted publication date: 20120509

Termination date: 20160523