CN101680057A - Copper alloy for electrical/electronic device and method for producing the same - Google Patents
Copper alloy for electrical/electronic device and method for producing the same Download PDFInfo
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- CN101680057A CN101680057A CN200880017586A CN200880017586A CN101680057A CN 101680057 A CN101680057 A CN 101680057A CN 200880017586 A CN200880017586 A CN 200880017586A CN 200880017586 A CN200880017586 A CN 200880017586A CN 101680057 A CN101680057 A CN 101680057A
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B03—SEPARATION OF SOLID MATERIALS USING LIQUIDS OR USING PNEUMATIC TABLES OR JIGS; MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
- B03C—MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
- B03C5/00—Separating dispersed particles from liquids by electrostatic effect
- B03C5/005—Dielectrophoresis, i.e. dielectric particles migrating towards the region of highest field strength
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B03—SEPARATION OF SOLID MATERIALS USING LIQUIDS OR USING PNEUMATIC TABLES OR JIGS; MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
- B03C—MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
- B03C5/00—Separating dispersed particles from liquids by electrostatic effect
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/02—Contact members
- H01R13/03—Contact members characterised by the material, e.g. plating, or coating materials
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Abstract
Disclosed is a copper alloy for electrical/electronic devices consisting of 1.5-5.0% by mass of nickel (Ni), 0.4-1.5% by mass of silicon (Si), and the balance of copper (Cu) and unavoidable impurities. In this copper alloy for electrical/electronic devices, the mass ratio between nickel (Ni) and silicon (Si), namely Ni/Si is not less than 2 but not more than 7. This copper alloy has an average crystal grain size of not less than 2 mu m but not more than 20 mu m, and the standard deviation of the crystal grain sizes is not more than 10 mu m.
Description
Technical field
The Cu-Ni-Si series electron equipment of lead frame, junctor, terminal, rly., switch etc. that the present invention relates to be applicable to electric/electronic device (Electrical/Electronic Device) is with copper alloy and manufacture method thereof.
Background technology
In the past, copper based materials such as the phosphor bronze of electrical conductivity and heat conductivity excellence, red copper, brass, corson alloy were widely used in the electric/electronic device material.Miniaturization, lightweight along with in recent years electric/electronic device begin the raising of desired strength, electroconductibility, proof stress relaxation property, bendability, plating, compactibility, thermotolerance etc. to the material that is used for electric/electronic device.At this, improve intensity and bendability simultaneously or improve intensity and electroconductibility simultaneously and be not easy.
Above-mentioned corson alloy is that Cu-Ni-Si is an alloy, because separating out of Ni and Si composition, its intensity height, it is the alloy that can satisfy as the desired characteristic of copper alloy for electrical/electronic device, but, for the as described above stricter condition that improves characteristic simultaneously, there is the anxiety of bendability deficiency in existing corson alloy.
For example, the copper alloy that obtains improveing as bendability, someone has proposed to contain the alloy of Ni:2～4% (quality), Si:0.5～1.0%, Zn:0.1～1.0%, Al, Mn, Cr etc., wherein, below the S:0.002%, surplus branch comprises Cu and unavoidable impurities, and precipitate is of a size of below the 10nm, and its distribution density is 1 * 10
5Individual/μ m
3More than, hardness Hv is (referring to a Japanese kokai publication hei 06-184680 communique) more than 220.But its bendability can not be satisfactory.
In addition, have the people also to propose a kind of Ni:4.0 of containing～5.0% (quality), Ni/Si than the copper alloy plate at the Si of 4～5 scope, all the other branches comprise Cu and unavoidable impurities, wherein, and the Ni in the alloy sheets tissue behind the artificial age-hardening
2The median size of Si precipitate is 3～10nm, Ni
2The equispaced of Si precipitate is 25nm following (for example referring to a TOHKEMY 2005-089843 communique).This copper alloy plate has improved tensile strength and electric conductivity.
In addition, also known a kind of Ni:0.4～4.8% (quality), Si:0.1～1.2%, Mg etc. of containing: 0～0.3% copper alloy, all the other branches comprise Cu and unavoidable impurities, wherein, the average crystallite particle diameter is below the 1 μ m, the area (for example referring to TOHKEMY 2006-089763 communique) of the grains constitute of particle diameter less than 3 μ m more than 90%, this copper alloy has improved tensile strength, electric conductivity and processibility.
But, though the intensity of having put down in writing in Japanese kokai publication hei 06-184680 communique, TOHKEMY 2005-089843 communique and 2006-089763 communique to improve corson alloy is the alloy that main purpose is carried out the ultra micro refinement of crystal grain, can not meanwhile electroconductibility, bendability be improved to a high level.
Summary of the invention
In view of such situation, the inventor to the one-tenth of copper alloy be grouped into, the relation of the standard deviation of average crystallite particle diameter, this crystallization particle diameter and bendability etc. studies, discovery is by carrying out suitable regulation to it, the bending machining characteristic be can improve, and intensity and electroconductibility deterioration can not made.Based on this understanding, further study, thereby finished the present invention.
The invention provides following technical scheme:
(1) a kind of copper alloy for electrical/electronic device, wherein, this copper alloy for electrical/electronic device contains the Ni of 1.5～5.0 quality %, the Si of 0.4～1.5 quality %, the mass ratio of Ni/Si is 2～7, surplus branch comprises Cu and unavoidable impurities, the average crystallite particle diameter of this copper alloy is 2 μ m～20 μ m, and the standard deviation of this crystallization particle diameter is below the 10 μ m.
(2) as (1) described copper alloy for electrical/electronic device, wherein, the scope of described average crystallite particle diameter below 15 μ m, and the standard deviation of this crystallization particle diameter is below the 8 μ m.
(3) as (1) described copper alloy for electrical/electronic device, wherein, the scope of described average crystallite particle diameter below 10 μ m, and the standard deviation of this crystallization particle diameter is below the 5 μ m.
(4) as any described copper alloy for electrical/electronic device in (1)～(3), it is characterized in that, except mentioned component, copper alloy also contains at least a element in the group that Mg, Sn and Zn form of being selected from of 0.005～2.0 quality %, and surplus branch comprises Cu and unavoidable impurities.
(5) as any described copper alloy for electrical/electronic device in (1)～(4), it is characterized in that, except mentioned component, copper alloy also contains 0.005～2.0 quality % and is selected from least a element in the group that Ag, Co, Cr, Fe, Mn, P, Ti and Zr form, and surplus branch comprises Cu and unavoidable impurities.
(6) a kind of manufacture method of copper alloy for electrical/electronic device wherein, comprises following operation a, operation b and operation c at least.
[operation a: cast the copper alloy of the Si of the Ni, 0.4～1.5 quality % that contain 1.5～5.0 quality %, wherein the mass ratio of Ni/Si is 2～7, and surplus branch comprises Cu and unavoidable impurities, thereafter, carries out hot-work, cold worked operation]
[operation b: behind the described operation a, carry out recrystallization (Zai Knot crystalline substance) operation handled of heat-transmission, in this recrystallization heat-transmission is handled, heat-up rate is set at more than 10 ℃/second, arrive temperature and be set at 700～950 ℃, hold-time is set at 5～300 seconds, and the speed of cooling that is cooled to 300 ℃ is set at more than 20 ℃/second]
[operation c: carry out the operation that timeliness is separated out behind the described operation b]
In addition, among the present invention, " average crystallite particle diameter " is present in the mean value of the crystalline particle diameter in the copper alloy tissue when being the copper alloy of observing behind the fusing recrystallization; " standard deviation of crystallization particle diameter " is based on that these crystallization particle diameters obtain.For this metal structure, can be with for example OM (opticmicroscope), scanning electron microscope (SEM) etc., by heat-treating under the structural state that (recrystallization processing) obtain or this metal structure of affirmation through the structural state that thermal treatment, ageing treatment, annealing etc. obtain under.
By following record above-mentioned and other feature and advantage of the present invention as can be known.
Embodiment
Copper alloy of the present invention has suitably been stipulated the average crystallite particle diameter of Cu-Ni-Si series copper alloy and the standard deviation of crystallization particle diameter, has improved the bending machining characteristic especially, so useful aspect the electric/electronic device purposes.Action effect and content thereof to the composition element that constitutes copper alloy for electrical/electronic device of the present invention describes below.
Ni and Si separate out the Ni-Si compound, help to improve intensity.Ni is defined in the reason that 1.5～5.0 quality %, Si be defined in 0.4～1.5 quality % to be, during its lower value that any element wherein is not enough, all can not get enough intensity, and any element wherein is when being higher than its higher limit, the capital causes intensity saturated, and electric conductivity reduces.In addition, Ni/Si is during than the scope beyond 2～7, the obvious variation of the balance of intensity and electric conductivity, be not suitable as must have high strength, the electric/electronic device alloy of high conduction.
Copper alloy of the present invention preferably also contains at least a element that is selected among Mg, Sn, the Zn except above-mentioned alloying constituent, improve material behavior thus.When adding Mg, help to improve stress relaxation characteristics, when adding Sn, help to improve stress relaxation characteristics and improve intensity, when adding Zn, help to improve coating affinity (め つ I moistens れ).When the content of such element is very few, can not obtain its effect, and Mg content is when too much, oxide amount increases when causing casting, the casting difficulty that becomes; Produce slight crack when causing hot-work because of the segregation meeting in when casting when Sn content is too much; When Zn content is too much, can further not improve plating adaptation (め つ I adherence), the obvious reduction of electric conductivity all can take place in the too much sample of all elements, and therefore not preferred these elements are too much.Copper alloy of the present invention can easily be made by selecting hot-rolled condition, cold rolling condition, recrystallization heat-treat condition, timeliness heat-treat condition, final rolling condition etc.
Above-mentioned alloy preferably also contains at least a element in the group that is selected from Ag, Co, Cr, Fe, Mn, P, Ti, Zr composition except above-mentioned alloying constituent, can improve material behavior thus.When adding Ag, Co, Cr, thickization of particle diameter the when formation of compound has suppressed recrystallization thermal treatment, this inhibition effect help bendability to improve and intensity is improved; When adding Fe, Ti, Zr, form compound, help to improve intensity; By adding P, the oxide amount when helping to suppress to cast; By adding Mn, help to improve hot workability.When the content of such element is very few, can not fully obtain its effect, and Ag is when too much, cost improves; When Co is too much, be difficult to be used to increase the sufficient thermal treatment of solid solution, can not improve material behavior.When Cr was too much, the inhibition effect of thickization of crystal grain was saturated; When Fe was too much, electric conductivity reduced; Ti, when Zr is too much, the oxide amount during casting increases, and is difficult to casting, or the generation source of the slight crack when becoming hot-work; When Mn is too much, cause the reduction of electric conductivity; When P was too much, precipitate increased the deterioration of the processibility that causes bending; Electric conductivity all can take place the too much sample of all elements obviously reduces, and therefore not preferred these elements are too much.Copper alloy of the present invention can easily be made by selecting hot-rolled condition, cold rolling condition, recrystallization heat-treat condition, timeliness heat-treat condition, final rolling condition etc.
Then, the preferred implementation for the manufacture method of the copper alloy for electrical/electronic device of the standard deviation with above-mentioned average crystallite particle diameter and crystallization particle diameter describes.
In the manufacture method of present embodiment, preferably have above-mentioned operation a, operation b and operation c, specifically, more preferably adopt following operation (1)～(10) successively.
(1) casting contains the operation of copper alloy of Si of Ni, 0.4～1.5 quality % of 1.5～5.0 quality %, and wherein, the mass ratio of Ni/Si is 2～7, and surplus branch comprises Cu and unavoidable impurities;
(2) carry out hot-work, cold worked operation;
(3) recrystallization heat-transmission treatment process;
(3-1) preferably will be set at more than 10 ℃/second more preferably 10 ℃/second～100 ℃/second (heat-up rate) until the heat-up rate that arrives temperature.
(3-2) arrive temperature and be preferably 700～950 ℃ (arrival temperature).
(3-3) hold-time is preferably 5～300 seconds (maintenance temperature).
(3-4) preferably will be set at more than 20 ℃/second, more preferably 20 ℃/second～200 ℃/second (speed of cooling) until for example 300 ℃ speed of cooling.
(4) timeliness is separated out operation;
(4-1) arriving temperature is that 300～600 ℃, treatment time are 0.5～10h, and the heat-up rate from room temperature to top temperature of this moment preferably is located in 2～25 ℃/minute the scope (intensification condition).
In (4-2) when cooling, more than 300 ℃ the time, preferably in stove, cool off (cooling conditions) with the speed of cooling in 1～2 ℃/minute the scope.
(5) preferably carry out 0.5～5hr heating, perhaps carry out heating in 5～60 seconds as the strain annealing operation 600～800 ℃ temperature 250～400 ℃ temperature.
So carry out, can obtain having the copper alloy of above-mentioned desired characteristic expeditiously.In addition, preferably between operation (4) and operation (5), add and carry out the cold worked operation that the calendering rate (comprises 0%) below 30%.
Below, the average crystallite particle diameter of copper alloy of the present invention and the standard deviation of this crystallization particle diameter are described.
In the copper alloy of the present invention, its average crystallite particle diameter is 2 μ m～20 μ m, is preferably below the 15 μ m, more preferably below the 10 μ m.When the average crystallite particle diameter is too small, the worked structure before can confirming sometimes in the operation remaining, the obvious variation of bendability.On the other hand, when the average crystallite particle diameter is excessive, the bendability variation crackle appears easily, during bending machining.The standard deviation of average crystallite particle diameter is below the 10 μ m, when this standard deviation is excessive, becomes big particle diameter and small particle size and mixes the state that exists.At this moment, big particle diameter is positioned under the situation on crooked summit, crackle occurs at curved surface sometimes, perhaps wrinkle occur near big particle diameter sometimes when bending, peels off from coating takes place near the macrorelief of wrinkle.
The intensity of copper alloy for electrical/electronic device of the present invention, excellent electric conductivity, particularly bending machining excellent can perform well in electric/electronic device purposes such as lead frame, junctor, terminal, rly., switch.In addition,, copper alloy for electrical/electronic device can be made expeditiously, mass production can also be fit to well with above-mentioned characteristic by manufacture method of the present invention.
Embodiment
The present invention will be described in more detail based on embodiment below, but the present invention is not limited to this.
[embodiment 1]
Melting has the copper alloy of the composition shown in the following table 1, obtains being cast as the ingot bar of the size of 110 * 160 * 30mm.This ingot bar was kept 30 minutes at 1000 ℃, after by hot rolling thickness being worked into 12mm from 30mm, use water cooling rapidly, implement to quench (baked is gone into れ),, carry out the face cutting in order to remove the surface oxidation epithelium, after reaching about 10mm, by cold rolling,, be worked into 0.15mm, 0.20mm, 0.25mm according to suitable test subject.Obtain each middle sample.
, temperature maintenance that table 2 put down in writing 5～300 second temperature in, above-mentioned each middle sample carried out recrystallization heat-transmission handle, cool off with water cooling or oil cooling rapidly thereafter.At this moment, the heat-up rate from room temperature to top temperature is in the scope more than 10 ℃/second, and more than 300 ℃, speed of cooling is in the scope more than 20 ℃/second.
After removing the surface oxidation epithelium of above-mentioned copper alloy sample, that carries out as required (comprising 0%) below 30% is cold rolling, separates out in order to carry out timeliness, implements thermal treatment in 120 minutes at 450～550 ℃.This moment, the heat-up rate from room temperature to top temperature was in 2～25 ℃/minute scope; During cooling,, in stove, cool off with the speed of cooling in 1～2 ℃/minute the scope influential more than 300 ℃ to separating out situation.Thereafter, that carries out that the calendering rate (comprises 0%) below 30% is cold rolling, carries out the heating of 0.5～5hr or carries out 5～60 seconds heating 600～800 ℃ temperature 250～400 ℃ temperature, carries out strain annealing.
Carry out following various characteristics evaluation for the electrical and electronic equipment part that so obtains with the sample (copper alloy sample) of copper alloy material.
A. electric conductivity:
In the constant temperature mortise that remains on 20 ℃ (± 0.5 ℃), measure than resistance by four-terminal method, calculate electric conductivity.Terminal pitch is from being 100mm.
B.0.2% yield strength (endurance) and tensile strength:
Use No. 5 test films based on JIS Z2201 that cut out abreast with rolling direction, based on JIS Z2241, each sample is respectively measured 2, obtains its mean value.About 0.2% yield strength, adopt micro residue elongation method (オ Off セ Star ト method), tensile strength is calculated divided by the numerical value that former sectional area obtains with maximum tensile stress.
C. average crystallite particle diameter and distribution thereof (standard deviation):
Utilize wet grinding, polishing grind with test film be finish-machined to minute surface with the vertical cross section of rolling direction after, with weak acid liquid abrasive surface was corroded several seconds, then, take the photo of 50～600 times of multiples with OM (opticmicroscope), take the photo of 400～5000 times of multiples with SEM (scanning electron microscope), based on the process of chopping of JIS H0501, for cross section particle size determination average crystallite particle diameter.In addition, by measuring particle diameter singly, obtain its size grade scale deviation.When calculating the size grade scale deviation, it measures sample number is 200.In addition, about rolling the sample that back crystal grain becomes flat, during particle size determination, measure the particle diameter (when being equivalent to the termination of recrystallization heat-transmission treatment process) of the preceding sample of calendering.
D. bendability evaluation (R/t (GW), R/t (BW)):
Implement above-mentioned processing, remove the oxide film of sample of thickness of slab t=0.25 (mm), the wide w=10 of plate (mm) after, carrying out the inside bend angle in parallel direction (following GW), these 2 directions of vertical direction (following BW) of rolling direction is 90 ° bending.In the crooked evaluation method, the above-mentioned minimum bending radius R that microcrack do not occur divided by sample thickness of slab t, is estimated with the R/t that obtains.When confirming flawless is arranged, use OM to judge, perhaps use SEM to judge at 400～2000 times at 50～600 times.The value of R/t is more little, illustrates that bendability is good more.
E. the adaptation of coating layer:
The gloss of implementing thickness 1 μ m on the test film of 30mm * 10mm is zinc-plated, with it in atmosphere, behind 150 ℃ of insulation 1000hr, after implementing 180 ° of bendings, make crooked the recovery, the tinned closed state of visual observation curved part uses OM to have or not the affirmation of peeling off at 50～200 times as required.Herein, the area occupation ratio of peeling off of bend is that 0～10% o'clock note is made " ◎ ", 10～30% an o'clock note and made " zero ", 30%～50% an o'clock note and make " △ ", 50% note work " * " when above.
F. stress relaxation characteristics:
Adopt the beam type (sheet is held Chi Block ロ Star Network formula) of NEC material industry meeting standard specifications (EMAS-3003), as surperficial maximum stress, set loading stress 80% value of 0.2% yield strength for, keep 1000hr, measure stress relaxation rate at 150 ℃ thermostatic baths.
For The above results, the alloy composition of middle sample is listed in table 1, the above-mentioned alloy characteristic evaluation of copper alloy sample the results are shown in table 2～table 4.
[table 1-1]
[table 1-2]
[table 2]
In the table 2, having added Ni, Si as the copper alloy composition is copper alloy sample 1 and 2, also having added any a kind among Mg, Sn, the Zn except Ni, Si is copper alloy sample 3～5, and also having added any among Mg, Sn, the Zn except Ni, Si more than 2 kinds is copper alloy sample 6～10.Because the recrystallization temperature is too high sample that the crystallization particle diameter is excessive or owing to the recrystallization temperature is crossed low not have the crystalline sample be copper alloy sample 11 and 12.In addition, the sample of the addition of Mg, Sn, Zn outside specialized range is copper alloy sample 13～18.
As shown in Table 2, " plating adaptation ", " stress relaxation ", " bendability " of the copper alloy sample 11 and 12 (comparative example) that the crystallization particle diameter is excessive are poor, are not enough to practicality.
Relative therewith, copper alloy of the present invention (copper alloy sample 1～10,13～15) has all shown the good alloy characteristic of enough practicalities in all assessment items.Wherein, as can be known, when further adding Zn as alloying constituent, the plating adaptation improves, and helps to improve tensile strength shown in copper alloy sample No.7,8,9,10 result.In addition, as can be known, when adding Mg, stress relaxation characteristics improves shown in copper alloy sample No.6,8,9,10.In addition, as can be known, when adding Sn, stress relaxation characteristics improves shown in copper alloy sample No.6,7,9,10, and among the No.9,10 that adds simultaneously with Mg, this characteristic is obvious especially.In addition, as can be known, by adding Mg, Sn, Zn simultaneously, " tensile strength ", " stress relaxation characteristics ", " plating adaptation " all are improved shown in copper alloy sample No.9,10.In addition, when addition was very few, that does not find that above-mentioned interpolation Mg, Sn, Zn brought improved effect (referring to copper alloy sample 13～15).
In addition, as a reference, the too much situation of above-mentioned Mg, Sn, Zn is as follows: when Mg is too much, be difficult to casting (referring to copper alloy sample 16), Sn, when Zn is too much, cause that sometimes electric conductivity significantly reduces (referring to copper alloy sample 17,18).
[table 3]
In the table 3, Ni/Si is that 4.1 sample is seen copper alloy sample 19～22, and Ni/Si is that 2～7 sample is seen copper alloy sample 23～26.In addition, in the table 3,, also comprise the result shown in the table of listing once more 2 in order to compare reference with above-mentioned division.As a comparative example, the content of Ni/Si or the sample of its mass ratio outside specialized range are seen copper alloy sample 27～34.
Herein, compare between the sample to the Ni that contains same concentrations.With copper alloy sample No.23 (embodiment) and 30 (comparative examples), copper alloy sample 25 (embodiment) and 34 (comparative examples) when comparing, " tensile strength " of the sample of comparative example, " 0.2% yield strength " and " electric conductivity " are poor.In addition, relatively the time, the Ni/Si of the sample of comparative example is greater than 7.0 with copper alloy sample No.24 (embodiment) and 29 (comparative examples), copper alloy sample 26 (embodiment) and 33 (comparative examples), and " tensile strength ", " 0.2% yield strength " are poor.In addition, shown in copper alloy sample No.27,31 (being comparative example), during Ni quantity not sufficient 1.5, even Ni/Si is remained on suitable value, tangible reduction has also appearred in " tensile strength ".As can be known from the above results, Ni content or Ni/Si be outside specialized range the time, occurs that electric conductivity reduces and the trend of intensity reduction.
[table 4]
The result of the copper alloy sample 44～51 (embodiment) of the above-mentioned optional element that table 4 contrast provided the copper alloy sample 35 (embodiment), the copper alloy sample 36～43 (embodiment) that has added the above-mentioned optional element in the specialized range that do not add optional element Ag, Co, Cr, Fe, Mn, P, Ti, Zr, added not enough specialized range.By these comparing results as can be known, owing to add the effect (for example above-mentioned optional element with the compound of Ni, Si formation separate out etc.) of above-mentioned optional element, " tensile strength " of copper alloy sample No.36～43 and " 0.2% yield strength " are improved.Wherein, for copper alloy sample No.37,38,42,43, owing to add Co, Cr, Ti, Zr, crystal grain-growth is under control, and its result " bendability " has obtained further improvement.On the other hand, the very few sample of the addition of above-mentioned optional element is not found the effect (referring to copper alloy sample No.44～51) of improving as described above.
In addition, copper alloy sample 52～59th, the sample (reference example) that above-mentioned optional element is too much, copper alloy sample 53 has produced slight crack, can not carry out hot-work.Copper alloy sample 54,58,59 has produced a large amount of oxide compounds when casting, can not obtain sample.Copper alloy sample 52,55,56,57 is because the increase of additive causes separating out increases, so electric conductivity obviously reduces or the bendability variation.
[table 5]
Heat-up rate when table 5 has provided the recrystallization processing, arrival temperature (recrystallization temperature), hold-time, the different example of cooling (cooling) speed.Copper alloy sample 69～74 (comparative example) is elongated in the treatment time of the temperature field of crystal grain-growth, and it is big that the average crystallite particle diameter becomes, or the like, bendability is poor.In addition, extremely " tensile strength ", " 0.2% yield strength " reduction of short copper alloy sample 68 (comparative example) of hold-time.Relative therewith, the copper alloy sample of handling with " heat-up rate " in the regulation of manufacture method of the present invention, " hold-time ", " cooling rate " 60～67 (embodiment) has all demonstrated good alloy characteristic in each assessment item.
Utilizability on the industry
Copper alloy for electrical/electronic device of the present invention can perform well in lead frame, connector, The electric/electronic device purposes such as terminal, relay, switch. In addition, manufacture method of the present invention is suitable Cooperation is for making efficiently the method for above-mentioned copper alloy for electrical/electronic device.
Above the present invention and its embodiment together are illustrated, but short of referring in particular to Fixed, any details during the present invention is not limited to illustrate is sending out shown in the violation of a right claim not Under the condition of bright spirit and scope, scope of the present invention should broadly be explained.
The application is willing to the special 2008-079256 of the hope requirement of the patent application right of priority that 2007-080266 and on March 25th, 2008 propose in Japan based on the patent application spy who proposed in Japan on March 26th, 2007, and with the form of reference the content of these applications is charged to this specification sheets as the part of this specification sheets.
Claims (6)
1, a kind of copper alloy for electrical/electronic device, wherein, this copper alloy for electrical/electronic device contains the Ni of 1.5 quality %～5.0 quality %, the Si of 0.4 quality %～1.5 quality %, the mass ratio of Ni/Si is 2～7, surplus branch comprises Cu and unavoidable impurities, the average crystallite particle diameter is 2 μ m～20 μ m, and the standard deviation of this crystallization particle diameter is below the 10 μ m.
2, copper alloy for electrical/electronic device as claimed in claim 1, wherein, the scope of described average crystallite particle diameter below 15 μ m, and the standard deviation of this crystallization particle diameter is below the 8 μ m.
3, copper alloy for electrical/electronic device as claimed in claim 1, wherein, the scope of described average crystallite particle diameter below 10 μ m, and the standard deviation of this crystallization particle diameter is below the 5 μ m.
4, as any described copper alloy for electrical/electronic device of claim 1～3, wherein, except mentioned component, copper alloy also contains 0.005 quality %～2.0 quality % and is selected from least a element in the group that Mg, Sn and Zn form, and surplus branch comprises Cu and unavoidable impurities.
5, as any described copper alloy for electrical/electronic device of claim 1～4, it is characterized in that, except mentioned component, copper alloy also contains 0.005 quality %～2.0 quality % and is selected from least a element in the group that Ag, Co, Cr, Fe, Mn, P, Ti and Zr form, and surplus branch comprises Cu and unavoidable impurities.
6, a kind of manufacture method of copper alloy for electrical/electronic device is characterized in that, described method comprises following operation a, operation b and operation c at least:
Operation a: cast copper alloy, carry out hot-work, cold worked operation thereafter, the copper alloy of being cast contains the Ni of 1.5 quality %～5.0 quality %, the Si of 0.4 quality %～1.5 quality %, and the mass ratio of Ni/Si is 2～7, and surplus branch comprises Cu and unavoidable impurities;
Operation b: behind the described operation a, carry out the operation that the recrystallization heat-transmission is handled, in this recrystallization heat-transmission is handled, heat-up rate is set at more than 10 ℃/second, arrive temperature and be set at 700 ℃～950 ℃, hold-time is set at 5 seconds～and 300 seconds, the speed of cooling that is cooled to 300 ℃ is set at more than 20 ℃/second;
Operation c: carry out the operation that timeliness is separated out behind the described operation b.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP080266/2007 | 2007-03-26 | ||
| JP2007080266 | 2007-03-26 | ||
| JP079256/2008 | 2008-03-25 | ||
| JP2008079256A JP5170881B2 (en) | 2007-03-26 | 2008-03-25 | Copper alloy material for electrical and electronic equipment and method for producing the same |
| PCT/JP2008/055785 WO2008126681A1 (en) | 2007-03-26 | 2008-03-26 | Copper alloy for electrical/electronic device and method for producing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101680057A true CN101680057A (en) | 2010-03-24 |
Family
ID=39863792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200880017586A Pending CN101680057A (en) | 2007-03-26 | 2008-03-26 | Copper alloy for electrical/electronic device and method for producing the same |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20100193092A1 (en) |
| EP (1) | EP2143810A4 (en) |
| JP (1) | JP5170881B2 (en) |
| CN (1) | CN101680057A (en) |
| WO (1) | WO2008126681A1 (en) |
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-
2008
- 2008-03-25 JP JP2008079256A patent/JP5170881B2/en active Active
- 2008-03-26 CN CN200880017586A patent/CN101680057A/en active Pending
- 2008-03-26 WO PCT/JP2008/055785 patent/WO2008126681A1/en active Application Filing
- 2008-03-26 EP EP08722882A patent/EP2143810A4/en not_active Withdrawn
- 2008-03-26 US US12/593,024 patent/US20100193092A1/en not_active Abandoned
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| CN104178660A (en) * | 2014-08-29 | 2014-12-03 | 河南科技大学 | High-strength Cu-Ni-Si alloy and preparation method thereof |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2008266783A (en) | 2008-11-06 |
| EP2143810A4 (en) | 2012-06-27 |
| EP2143810A1 (en) | 2010-01-13 |
| WO2008126681A1 (en) | 2008-10-23 |
| JP5170881B2 (en) | 2013-03-27 |
| US20100193092A1 (en) | 2010-08-05 |
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