CN101661948B - Organic light emitting diode display and fabricating method thereof - Google Patents
Organic light emitting diode display and fabricating method thereof Download PDFInfo
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- CN101661948B CN101661948B CN200810186210.9A CN200810186210A CN101661948B CN 101661948 B CN101661948 B CN 101661948B CN 200810186210 A CN200810186210 A CN 200810186210A CN 101661948 B CN101661948 B CN 101661948B
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- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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Abstract
The invention relates to an organic light emitting diode display and a fabricating method thereof. The organic light emitting diode display includes a switch TFT and a drive TFT formed on a substrate; an overcoat layer formed on the TFTs; a drain contact hole exposing portions of a drain electrode of the drive TFT by removing portions of the overcoat layer; a first electrode contacting to the drain electrode of the drive TFT; a bank pattern exposing an aperture area of a pixel; an organic layer formed on the first electrode; and a second electrode formed on the organic layer, wherein the bank pattern blocks regions where the drain contact hole is formed.
Description
The application requires in the rights and interests of the korean patent application No.10-2008-0093424 of submission on September 23rd, 2008, and it is by reference to being incorporated to herein, just as set forth completely in this article.
Technical field
The present invention relates to a kind of organic light emitting diode display and manufacture method thereof.
Background technology
Recently, various flat panel display equipments are actively incorporated into display application field widely, to overcome the weight of weight and the shortcoming of large volume of cathode ray tube.With regard to these flat panel display equipments, exist liquid crystal display (LCD) equipment, field emission to show (FED) equipment, plasma display (PDP) equipment, electroluminescence device etc.
Electroluminescence device is divided into inorganic light-emitting diode display and organic light emitting diode display according to the material of luminescent layer.Because adopted self-luminescent material, for example, so electroluminescence device has many advantages: response speed, remarkable luminous efficiency, high brightness and wide visual angle fast.
Active matrix type organic light emitting diode display (AMOLED) shows image by the electric current that utilizes thin-film transistor to control flow to Organic Light Emitting Diode (OLED).Organic light emitting diode display is according to comprising that the structure of the OLED of anode, negative electrode and organic layer is divided into emission type and lower emission type.Lower emission type by the radiation of visible light being produced by organic layer to the bottom with the substrate of TFT.At this moment, upper emission type by radiation of visible light to the top with the substrate of TFT.
Fig. 1 illustrates the cross-sectional structure of the pixel in emission type organic light-emitting diode (OLED) display apparatus.Fig. 2 is the plane graph that the switching TFT of Fig. 1 is shown.
With reference to Fig. 1, according to the OLED of correlation technique, comprise data wire and gate line, switching TFT (SWTFT), drive TFT (DRTFT), holding capacitor, coat 18, resilient coating 19, negative electrode 20, accumulation pattern (bank pattern) 21, organic layer 22 and the anode 23 being formed on substrate 10.
Gate metallic pattern is formed on substrate 10, and it comprises gate line, is connected to grid 11a and the 11b of the switching TFT of gate line (SWTFT) and drive TFT (DRTFT).Gate insulator 12 for cover gate metal pattern is formed on the substrate 10 with gate metallic pattern.Active layer 13a and the 13b of switching TFT (SWTFT) and drive TFT (DRTFT) are formed on gate insulator 12 by semiconductor pattern.Comprise that the source electrode 14a of switching TFT (SWTFT) and drive TFT (DRTFT) and the source/drain metal pattern of 14b and drain electrode 15a and 15b are formed on semiconductor pattern and gate insulator 12.Passivation layer 16 is formed on source/drain metal pattern and gate insulator 12.The some parts of the drain electrode 15 of switching TFT (SWTFT) exposes via the contact hole through passivation layer 16.In addition, the some parts of the grid 11b of drive TFT (DRTFT) exposes via the contact hole through passivation layer 16 and gate insulator 12.The contact electrode pattern 17 of being made by transparent conductive material is formed on passivation layer 16.Contact electrode pattern 17 touches the drain electrode of switching TFT (SWTFT) via the contact hole through passivation layer 16, and via the contact hole through passivation layer 16 and gate insulator 12, touch the grid 11b of drive TFT (DRTFT), thereby switching TFT (SWTFT) and drive TFT (DRTFT) are electrically connected to.Comprise that the coat 18 such as the organic insulating material of polyimides or photosensitive acrylate is formed on passivation layer 16 and contact electrode pattern 17.The some parts of the drain electrode 15b of drive TFT (DRTFT) exposes via the drain contact hole (DH) through coat 18.By silicon nitride (SiN
x) resilient coating 19 made is formed on coat 18.The negative electrode 20 of being made by aluminium (Al) is formed on the some parts of the drain electrode 15b exposing of resilient coating 19 and drive TFT (DRTFT).Comprise such as silicon nitride (SiN
x) the accumulation pattern 21 of inorganic material be formed on the some parts of negative electrode 20 and resilient coating 19 to design the porose area (aperture area, EA) of pixel.The organic layer 22 and the anode 23 that comprise ITO (tin indium oxide) are sequentially formed on accumulation pattern 21 and negative electrode 20.Anode 23 is provided with high voltage.
In OLED as shown in Figure 1, the drain contact hole (DH) that passes the coat 18 of even thickness is formed in porose area (EA).Thus, because the organic layer 22 in the region A of drain contact hole (DH) is because the stairstepping of drain contact hole (DH) is thinner than other regions, so the organic layer 22 in porose area (EA) can have inhomogeneous thickness.Conventionally, the thickness of the organic layer in the brightness of pixel and each unit area is inversely proportional to.Therefore, the brightness of same pixel may change according to position.In other words, the brightness at the A place, region of drain contact hole (DH) is higher than other regions.Like this, if the brightness of some the region A in a pixel is high, the organic layer of region A is degenerated because assembling stress thereon with regard to being easy to.If some area part A of the organic layer in a porose area (EA) degenerate, this part will be considered to an error point of brightness.Because surround these shortcomings of the organic layer of drain contact hole (DH), will make display floater there is poor picture quality and short life-span according to the OLED of correlation technique.
When the TFT in the OLED shown in Fig. 1 is formed with N-shaped semiconductor layer, the semiconductor layer of TFT comprises the n+ ion doped layer on silicon layer and silicon layer.N+ ion doped layer play a part silicon layer and on metal level between ohmic contact.Should use dry-etching method to remove the n+ ion doped layer on channel layer.In design during TFT, if semiconductor layer 13a and gate electrode 11a misalignment and differ based on the amount at the edge of raceway groove " B " as shown in Figure 2, will to have ladder at misalignment part B as shown in Figure 1 poor for semiconductor layer 13a so.In this case, just can not as other planar sections, easily remove the n+ ion doped layer of the semiconductor layer 13a of this end difference office.If the n+ ion doped layer at the raceway groove place of TFT is not suitably removed, just may locate to occur less desirable leakage current at the non-horizontal surface (offlevel) of TFT.
Fig. 3 is the curve chart that the TFT magnitude of leakage current on the non-horizontal surface producing because of the remaining n+ ion doped layer in groove office is shown.As shown in Figure 3, according to many experiments result, the maximum TFT magnitude of leakage current on the non-horizontal surface producing because of the remaining n+ ion doped layer in groove office is about 1 * 10
-9a.This is a very large electric current.Like this, when TFT amount of leakage current is very high, keep the voltage of holding capacitor performance just may reduce.This can cause the defect such as the display quality of flicker, or because the degeneration of black gray characteristic causes that contrast declines.
Summary of the invention
One object of the present invention is to provide the manufacture method of a kind of organic light-emitting diode (OLED) display apparatus and OLED, by forming drain contact hole and making drain contact hole can not be formed on the life-span that has increased oled panel in porose area.
Another object of the present invention is to provide the manufacture method of a kind of organic light-emitting diode (OLED) display apparatus and OLED, by reducing the leakage current of TFT raceway groove forming position, improve display quality.
To achieve these goals, according to the organic light-emitting diode (OLED) display apparatus of the preferred embodiment of the present invention, comprise: switching TFT and drive TFT, it is formed on substrate; Coat, it is formed in switching TFT and drive TFT; Drain contact hole, it exposes the some parts of the drain electrode of drive TFT by removing the some parts of coat; The first electrode, the drain electrode of its contact drive TFT; Pile up pattern, it exposes the porose area of pixel; Organic layer, it is formed on the first electrode; The second electrode, it is formed on organic layer; And wherein, pile up pattern and block the region that forms drain contact hole.
Switching TFT comprises: grid, and it is connected to gate line; And first active patterns, it for forming the first raceway groove between source electrode and drain electrode; Wherein, the edge of the first active patterns is positioned at the inner side at edge of the grid of switching TFT.
The first raceway groove has at least one shape in " U " shape, " L " shape and " I " shape.
Drive TFT comprises: grid, and it is connected to the drain electrode of switching TFT; And second active patterns, it for forming the second raceway groove between source electrode and drain electrode; Wherein, the edge of the second active patterns is positioned at the inner side of outermost edge of the grid of drive TFT.
The second raceway groove has " O " shape.
Pile up pattern and comprise at least one material in inorganic material and organic material.
Pile up pattern and comprise at least one material in Si oxide, silicon nitride, photosensitive acrylate and polyimides.
The first electrode comprises opaque negative electrode, and the second electrode comprises transparent anode.
The first electrode comprises the anode with reflecting electrode, and the second electrode comprises transparent cathode.
The first electrode comprises a kind of structure being selected from three-decker and double-decker, and described three-decker has two kinds of transparent metals and the reflective metals between described two kinds of transparent metals, and described double-decker has transparent metal and reflective metals.
Method according to the manufacture organic light-emitting diode (OLED) display apparatus of the preferred embodiments of the invention, comprising: on substrate, form switching TFT and drive TFT; In switching TFT and drive TFT, form coat; By removing the some parts of coat, the drain contact hole that formation exposes the some parts of the drain electrode of drive TFT; The first electrode of the drain electrode of patterning contact drive TFT; The accumulation pattern that patterning exposes the porose area of pixel; On the first electrode, form organic layer; On organic layer, form the second electrode; And wherein, pile up pattern and block the region that forms drain contact hole.
Accompanying drawing explanation
Accompanying drawing is incorporated to a part that forms specification in specification, so that a further understanding of the present invention to be provided.Accompanying drawing shows embodiments of the present invention, and is used from and explains principle of the present invention with specification one.
In the accompanying drawings:
Fig. 1 illustrates the cross sectional view of the pixel in organic light-emitting diode (OLED) display apparatus according to correlation technique;
Fig. 2 is the plane graph that the switching TFT of Fig. 1 is shown;
Fig. 3 is the curve chart that the TFT magnitude of leakage current on the non-horizontal surface producing because remain n+ ion doped layer in raceway groove forming position is shown;
Fig. 4 is the diagram that first embodiment of the invention illustrates the planar structure of the pixel in OLED display device;
Fig. 5 cuts the diagram of cross-sectional structure along the I-I ' line in Fig. 4 and II-II ' line;
Fig. 6 is the diagram that the equivalent circuit diagram of the pixel in the OLED display device shown in Figure 4 and 5 is shown;
Fig. 7 a, 8a, 9a, 10a, 11a, 12a, 13a, 14a and 15a are the plane graphs that the manufacturing step of the OLED display device shown in Fig. 4-6 is shown;
Fig. 7 b, 8b, 9b, 10b, 11b, 12b, 13b, 14b, 15b and 16 are cross sectional view that the manufacturing step of the OLED display device shown in Fig. 4-6 is shown;
Figure 17 is the curve chart that the TFT magnitude of leakage current on non-horizontal surface is shown according to the present invention;
Figure 18 a is the plane graph that the switching TFT with " I " shape raceway groove is shown;
Figure 18 b is the cross sectional view cutting along the III-III ' line in Figure 18 a;
Figure 19 a is the plane graph that the switching TFT with " L " shape raceway groove is shown;
Figure 19 b is the cross sectional view cutting along the IV-IV ' line in Figure 19 a;
Figure 20 is the view that the cross section structure of the pixel in OLED display device is shown second embodiment of the invention; And
Figure 21 is the diagram of equivalent electric circuit that the pixel of the OLED display device shown in Figure 20 is shown.
Embodiment
With reference to Fig. 4 and 21 pairs of the preferred embodiment of the present invention, be described in detail.
Fig. 4-19b illustrates reverse OLED structure, and in this structure, top electrode is anode, and bottom electrode is negative electrode.
Fig. 4 first embodiment of the invention illustrates the planar structure of the pixel in OLED display device.Fig. 5 illustrates the cross section structure cutting along the I-I ' line in Fig. 4 and II-II ' line.And Fig. 6 illustrates the equivalent circuit diagram of the pixel in the OLED display device shown in Fig. 5.In Figure 4 and 5, for convenient, and not shown gate pads, data pads, VDD supply pad and VSS supply with pad.
With reference to Fig. 4-6, the OLED display device of first embodiment of the invention comprises: be formed on gate line (GL), data wire (DL), VSS supply line 111n, switching TFT (SWTFT), drive TFT (DRTFT), holding capacitor Cst, coat 118, resilient coating 119, accumulation pattern 121 and Organic Light Emitting Diode (OLED) on substrate 110.OLED comprises negative electrode 120, organic layer 122 and anode 123.
Gate line (GL) is connected to gate drivers by gate pads, makes scanning impulse (Scan) from gate drivers, be provided to an electrode of switching TFT (SWTFT).Data wire (DL) is connected to data driver by data pads, makes data be provided to switch FTF (SWTFT) from data driver.VSS supply line 111b is connected to VSS and supplies with pad, makes low level voltage (VSS) from VSS power supply, be provided to an electrode of drive TFT (DRTFT).
The source electrode 114a of switching TFT (SWTFT) is connected to data wire (DL), and the drain electrode 115a of switching TFT (SWTFT) is connected to the grid 111c of drive TFT (DRTFT) by the first contact electrode pattern 117.The grid 111a of switching TFT (SWTFT) is connected to the gate line (GL) that sequentially provides scanning impulse (Scan).In response to the scanning impulse from gate line (GL) (Scan), conducting makes it data from data wire (DL) can be provided to the grid 111c of drive TFT (DRTFT) to switching TFT (SWTFT).Switching TFT (SWTFT) can be equipped with N-type mos field effect transistor (MOSFET).The edge of the active patterns in switching TFT (SWTFT) is positioned at the edge of the gate metallic pattern that comprises grid 111a, thereby can reduce the leakage current of groove office.
The source electrode 114b of drive TFT (DRTFT) is connected to VSS supply line 111b by the second contact electrode pattern 117 ', and the drain electrode 115b of drive TFT (DRTFT) is connected to negative electrode 120.The drain electrode 115a of an EDGE CONTACT switching TFT (SWTFT) of the grid 111c of drive TFT (DRTFT).Drive TFT (DRTFT) is according to the flow through magnitude of current of OLED of the Data Control that is supplied to the grid 111c of himself.Drive TFT (DRTFT) can be equipped with N-type MOSFET.The edge of the active patterns in drive TFT (DRTFT) is positioned at the edge of the gate metallic pattern that comprises grid 111c, thereby can reduce the leakage current of groove office.
Holding capacitor Cst comprises: as the VSS supply line 111b of an electrode, as the drain electrode 115a of the switching TFT (SWTFT) of another electrode with as the gate insulator 112 of the dielectric layer between two electrodes.Holding capacitor Cst keeps grid 111c and the voltage difference between source electrode 114b of drive TFT (DRTFT) constant in a frame.
It is upper that coat 118 utilizes the organic material such as polyimides or photosensitive acrylate to be formed on TFT (SWTFT and DRTFT), poor to reduce the ladder that TFT (SWTFT and DRTFT) causes.The some parts of drain electrode 115b in drive TFT (DRTFT) exposes via the drain contact hole (DH) through coat 118.The negative electrode 120 that plays the bottom electrode effect of OLED is connected to the drain electrode 115b exposing of drive TFT (DRTFT).Between coat 118 and negative electrode 120, exist to stop the degassed resilient coating of organic coat layer 118 119.
Pile up pattern 121 be arranged on resilient coating 119 and the some parts of negative electrode 120 on, to limit porose area EA and the non-porose area SA of pixel.Piling up pattern 121 exposes porose area EA and covers non-porose area SA.Particularly, at the upside of pixel, pile up pattern 121 formation ground wider than the accumulation pattern of correlation technique, thereby cover (or blocking) by the caused staircase areas A of drain contact hole (DH).Thus, because removed by drain contact hole (DH) the staircase areas A producing from porose area (EA), thereby with regard to the degeneration of the display quality that can not occur to cause because of the defective organic layer 22 in staircase areas A place.
By a plurality of processing steps shown in Fig. 7 a-16, produce OLED display device.
Fig. 7 a, 8a, 9a, 10a, 11a, 12a, 13a, 14a and 15a are the plane graphs that the manufacturing step of the OLED display device shown in Fig. 4-6 is shown.Fig. 7 b, 8b, 9b, 10b, 11b, 12b, 13b, 14b, 15b and 16 are cross sectional view that the manufacturing step of the OLED display device shown in Fig. 4-6 is shown.
With reference to Fig. 7 a and 7b, by sputtering technology, deposit gate metal layer comprising on the substrate 110 of clear glass or plastic material, this gate metal layer comprises any, two kinds or the more kinds of lamination forming in previous materials in aluminium, aluminium neodymium and molybdenum, or has two or more the alloying metal in previous materials.By photoetching process and wet etching process pattern gate metal layer.As a result, on substrate 110, form comprise switching TFT (SWTFT) and drive TFT (DRTFT) grid 111a and 111c, be connected to the gate metallic pattern of gate line (GL) and the VSS supply line 111b of grid 111a.
With reference to Fig. 8 a and 8b, will be such as Si oxide (SiO by chemical vapour deposition (CVD) (CVD) technique
x) or silicon nitride (SiN
x) inorganic insulating material and comprise that the semi-conducting material such as amorphous silicon or polysilicon of n+ ion doped layer is sequentially deposited on the substrate 110 with gate metallic pattern.Afterwards, utilize photoetching process and dry etching process, remove the n+ ion doped layer on the U-shaped channel region of switching TFT (SWTFT) and the O shape channel region of drive TFT (DRTFT).Then, utilize remaining semiconductor layer as mask, carry out dry etching process and remove the inorganic material exposing.As a result, the first active patterns 113a on the gate insulator 112 of cover gate metal pattern 111a, 111b, 111c and GL, gate insulator 112 and the second active patterns 113b are formed on substrate 110.Now, the first active patterns 113a is positioned at the inner side at edge of the grid 111a of switching TFT (SETFT), and making does not have ladder poor on " U " shape channel region.Therefore,, in dry etching process, the n+ ion doped layer corresponding with channel region fully removed.The second active patterns 113b is arranged in the inner side of outermost edge of the grid 111c of drive TFT (DRTFT), and making does not have ladder poor on " O " shape channel region.Therefore,, in dry etching process, the n+ ion doped layer corresponding with channel region is completely removed.As a result, the maximum leakage current of the non-horizontal surface of TFT be as shown in figure 17 about 5 * 10
-12a.In Figure 17, trunnion axis represents to be provided to the voltage (VG) of grid, and vertical axis represents magnitude of leakage current (ID).As shown in curve chart, magnitude of leakage current is far smaller than the magnitude of leakage current 1 * 10 that in relevant channel region, remaining n+ ion doped layer produces
-9a.When the magnitude of leakage current on the non-horizontal surface of switching TFT (SWTFT) reduces, keep the voltage of the performance of holding capacitor just to increase, thereby just there will not be the defective problem of display quality.In addition, when the magnitude of leakage current on the non-horizontal surface of drive TFT (DRTFT) reduces, the characteristic of black gray is just enhanced, thereby contrast is just enhanced.
Switching TFT (SWTFT) can have " I " shape raceway groove as shown in Figure 18 a and 18b or " L " shape raceway groove as shown in Figure 19 a and 19b.In Figure 18 a and 18b, active patterns ACT is positioned at the inner side at the edge of the grid G that forms switching TFT (SWTFT), and making does not have ladder poor on " I " shape channel region.Therefore, the n+ ion doped layer corresponding with channel region can be completely removed.In addition, in Figure 19 a and 19b, active patterns ACT is positioned at the inner side at the edge of the grid (G) that forms switching TFT (SWTFT), and make does not have ladder poor on " L " shape channel region.Therefore, the n+ ion doped layer corresponding with channel region can be completely removed.
With reference to Fig. 9 a and 9b, the individual layer or double-deck data metal that comprise aluminium (Al), molybdenum (Mo), chromium (Cr), copper (Cu), aluminium alloy, molybdenum alloy and/or copper alloy are deposited on the whole surface of the substrate 100 with active patterns 113a and 113b.Afterwards, by photoetching process and wet etching process patterning data metal.As a result, comprise that the source electrode 114b of the source electrode 114a of switching TFT (SWTFT) and drain 115a, drive TFT (DRTFT) and the data metal pattern of drain electrode 115b are formed on substrate 110.
With reference to Figure 10 a and 10b, will be such as Si oxide (SiO by CVD technique
x) or silicon nitride (SiN
x) inorganic material be deposited on the whole surface of the substrate 110 with data metal pattern.Afterwards, by photoetching process and dry etching process, remove part inorganic material.As a result, formed exposure switching TFT (SWTFT) drain electrode 115a some parts the first through hole PH1, expose drive TFT (DRTFT) grid 111c some parts the second through hole PH2, expose VSS supply line 111b some parts third through-hole PH3 and expose the fourth hole PH4 of some parts of the source electrode 114b of drive TFT (DRTFT).
With reference to Figure 11 a and 11b, the transparent conductive material such as ITO (tin indium oxide) or IZO (indium zinc oxide) is deposited on the whole surface of the substrate 110 with passivation layer 116.Utilize photoetching process and dry etching process, remove partially transparent electric conducting material.As a result, formed by the drain electrode 115a of switching TFT (SWTFT) be electrically connected to drive TFT (DRTFT) grid 111c the first contact electrode pattern 117 and VSS supply line 111b is electrically connected to the second contact electrode pattern 117 ' of the source electrode 114b of drive TFT (DRTFT).
With reference to Figure 12 a and 12b, by CVD technique, the organic insulating material such as polyimides or photosensitive acrylate is deposited on the whole surface of the substrate 110 with contact electrode pattern 117 and 117 '.Afterwards, utilize photoetching process and dry etching process, remove part organic insulator.As a result, formed the coat 118 with drain contact hole (DH), and drain contact hole exposes the some parts that is formed on the passivation layer 116 on the drain electrode 115b of drive TFT (DRTFT) and the drain electrode 115b of switching TFT (SWTFT).
With reference to Figure 13 a and 13b, will be such as Si oxide (SiO by CVD technique
x) or silicon nitride (SiN
x) inorganic insulating material be deposited on the whole surface of the substrate 110 with coat 118.Afterwards, utilize photoetching process and dry etching process, remove part inorganic insulating material.As a result, resilient coating 119 is patterned to be formed on coat 118, and via drain contact hole (DH), exposes the some parts of drain electrode 115b.
With reference to Figure 14 a and 14b, by sputtering technology, the opaque metal with high reflectance such as aluminium (Al), aluminium alloy, silver (Ag), silver alloy, molybdenum (Mo), chromium (Cr) or copper (Cu) is deposited on the whole surface with resilient coating 119.Afterwards, utilize photoetching process and etch process, patterning opaque metal is to form negative electrode 120.Opaque negative electrode 120 is connected to the drain electrode 115b of drive TFT (DRTFT) via drain contact hole (DH).
With reference to Figure 15 a and 15b, will be such as Si oxide (SiO by CVD technique
x) or silicon nitride (SiN
x) inorganic insulating material be deposited on the whole surface of the substrate 110 with opaque negative electrode 120.Afterwards, utilize photoetching process and etch process, patterning inorganic insulating material, to form the accumulation pattern 121 that defines porose area EA and non-porose area SA in pixel.The accumulation pattern 121 forming covers non-porose area SA and exposes porose area EA.Particularly, the accumulation pattern 121 of pixel upside is wider than the accumulation pattern of correlation technique, makes it can cover (or blocking) because of drain contact hole (DH) and the staircase areas A producing.Therefore, from porose area EA, removed the staircase areas A producing because of drain contact hole (DH).The defect of the display quality so, also causing because of the organic layer 122 that staircase areas A place degenerates with regard to not occurring.Now, pile up pattern 121 and can comprise the organic insulating material such as photosensitive acrylate or polyimides.
With reference to Figure 16, utilize thermal evaporation technique sequentially to deposit electronic injection layer material, electric transmission layer material, emissive layer materials, hole transport layer material and hole injection layer material on the whole surface with the substrate 110 of piling up pattern 121, form thus organic layer 122.Afterwards, utilize sputtering technology, will be such as IZO, ITO or tungsten oxide (WO
x) oxidation material be deposited on the whole surface of the substrate 110 with organic layer 122 to form anode 123.
Figure 20 and 21 illustrates normal OLED type, and wherein transparent cathode is used as top electrode, and reflecting electrode and transparent anode are as bottom electrode.
Figure 20 illustrates the cross section structure of the pixel in OLED display device second embodiment of the invention.Figure 21 illustrates the equivalent circuit diagram of the pixel in the OLED display device shown in Figure 20.
With reference to Figure 20 and 21, OLED display device second embodiment of the invention comprises: the gate line on substrate 110 (GL), data wire (DL), VDD supply line 211b, switching TFT (SWTFT), drive TFT (DRTFT), holding capacitor Cst, coat 118, resilient coating 119, accumulation pattern 121 and OLED.OLED comprises reflecting electrode 220, anode 221, organic layer 222 and transparent cathode 223.
Holding capacitor Cst dispose VDD supply line 211b as the drain electrode 115a of an electrode, switching TFT (SWTFT) as another electrode and gate insulator 112 as dielectric layer.
The anode 221 of reflecting electrode 220 with the bottom electrode effect of OLED comprises oxidation material, aluminium (Al) and the silver-aluminium-neodymium (Ag-AlNd) such as ITO or IZO, and is connected to the drain electrode 115b of the drive TFT (DRTFT) exposing by drain contact hole (DH).For instance, the anode 221 that has a reflecting electrode 220 can have at least one structure being selected from the three-decker of ITO/Ag/ITO and the double-decker of Ag/ITO.
In OLED display device second embodiment of the invention, the accumulation pattern 121 of pixel upside is wider than the accumulation pattern in correlation technique, thereby it can cover because of drain contact hole (DH) and the staircase areas A producing.Therefore, from porose area EA, removed the staircase areas A producing because of drain contact hole (DH).The defect of the display quality so, also causing because of the organic layer 122 that staircase areas A place degenerates with regard to not occurring.
Although embodiments of the present invention be have been described in detail with reference to accompanying drawing, but those skilled in the art should be appreciated that, in the situation that not changing technical spirit of the present invention or inner characteristic, can realize the present invention with other concrete forms, such as combining the above-mentioned shape of mentioning, material component, structure etc.Scope of the present invention is limited by claims rather than detailed description of the present invention.Implication at claims and all remodeling carrying out in scope or modification or its equivalent change interpretation should be become fall within the scope of the invention.
Claims (12)
1. an organic light-emitting diode (OLED) display apparatus, comprising:
Be formed on switching TFT and drive TFT on substrate;
Cover the coat of described switching TFT and drive TFT;
Drain contact hole, described drain contact hole exposes the some parts of the drain electrode of described drive TFT by removing the some parts of described coat;
The first electrode, described the first electrode contacts the drain electrode of described drive TFT via described drain contact hole;
Pile up pattern, described accumulation pattern exposes the porose area of pixel, and wherein said accumulation pattern is directly to form on described first electrode at described drain contact hole place;
The organic layer forming on the accumulation pattern at described drain contact hole place and described the first electrode, wherein, described organic layer comprises hole injection layer, hole transmission layer, emission layer, electron transfer layer and electron injecting layer; The second electrode forming on the described organic layer at described drain contact hole place; And
Between described coat and described the first electrode for stoping the degassed resilient coating of described coat,
Wherein, described accumulation pattern blocks by the caused staircase areas of described drain contact hole, and stops described organic layer luminous at described drain contact hole place,
Wherein, described organic layer is to form on the whole surface of described substrate with described accumulation pattern,
Wherein, described switching TFT comprises:
Grid, it is connected to gate line; And
The first active patterns, it is for forming the first raceway groove between the source electrode in described switching TFT and drain electrode;
Wherein, the inner side at edge of grid that the edge of described the first active patterns is positioned at described switching TFT is to reduce the leakage current of described the first raceway groove.
2. equipment according to claim 1, wherein, described the first raceway groove has a kind of shape being selected from " U " shape, " L " shape and " I " shape.
3. equipment according to claim 1, wherein, described drive TFT comprises:
Grid, it is connected to the drain electrode of described switching TFT; And
The second active patterns, it is for forming the second raceway groove between the source electrode in described drive TFT and drain electrode;
Wherein, the edge of described the second active patterns is positioned at the inner side of outermost edge of the grid of described drive TFT,
Wherein, described the second raceway groove has " O " shape.
4. equipment according to claim 1, wherein, described the first electrode comprises opaque negative electrode, and described the second electrode comprises transparent anode.
5. equipment according to claim 1, wherein, described the first electrode comprises the anode with reflecting electrode, and described the second electrode comprises transparent cathode.
6. equipment according to claim 5, wherein, described the first electrode comprises a kind of structure being selected from three-decker and double-decker, described three-decker has two kinds of transparent metals and the reflective metals between described two kinds of transparent metals, and described double-decker has transparent metal and reflective metals.
7. a method of manufacturing organic light-emitting diode (OLED) display apparatus, comprising:
On substrate, form switching TFT and drive TFT;
Form the coat that covers described switching TFT and drive TFT;
By removing the some parts of described coat, the drain contact hole that formation exposes the some parts of the drain electrode of described drive TFT;
To carrying out patterning for be connected to the first electrode of the drain electrode of described drive TFT via described drain contact hole;
To making the porose area of pixel and accumulation pattern that non-porose area exposes carry out patterning, wherein said accumulation pattern is directly to form on described first electrode at described drain contact hole place;
Form organic layer having on the whole surface of the described substrate of described accumulation pattern, described drain contact hole and described the first electrode, wherein, described organic layer comprises hole injection layer, hole transmission layer, emission layer, electron transfer layer and electron injecting layer; And
On the organic layer at described drain contact hole place, form the second electrode;
Wherein, also between described coat and described the first electrode, be formed for the resilient coating that stops described coat degassed;
Wherein, described accumulation pattern blocks by the caused staircase areas of described drain contact hole, and stops described organic layer luminous at described drain contact hole place,
Wherein, described switching TFT comprises:
Grid, it is connected to gate line; And
The first active patterns, it is for forming the first raceway groove between the source electrode in described switching TFT and drain electrode;
Wherein, the inner side at edge of grid that the edge of described the first active patterns is positioned at described switching TFT is to reduce the leakage current of described the first raceway groove.
8. method according to claim 7, wherein, described the first raceway groove has a kind of shape being selected from " U " shape, " L " shape and " I " shape.
9. method according to claim 7, wherein, described drive TFT comprises:
Grid, it is connected to the drain electrode of described switching TFT; And
The second active patterns, it is for forming the second raceway groove between the source electrode in described drive TFT and drain electrode;
Wherein, the edge of described the second active patterns is positioned at the inner side of outermost edge of the grid of described drive TFT,
Wherein, described the second raceway groove has " O " shape.
10. method according to claim 7, wherein, described the first electrode comprises opaque negative electrode, and described the second electrode comprises transparent anode.
11. methods according to claim 7, wherein, described the first electrode comprises the anode with reflecting electrode, and described the second electrode comprises transparent cathode.
12. methods according to claim 11, wherein, described the first electrode comprises a kind of structure being selected from three-decker and double-decker, described three-decker has two kinds of transparent metals and the reflective metals between described two kinds of transparent metals, and described double-decker has transparent metal and reflective metals.
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| KR102212457B1 (en) * | 2013-05-30 | 2021-02-04 | 엘지디스플레이 주식회사 | Organic light emitting display device and manufacturing method of the same |
| WO2015096356A1 (en) | 2013-12-24 | 2015-07-02 | 京东方科技集团股份有限公司 | Double-sided display panel |
| KR102293595B1 (en) * | 2015-03-24 | 2021-08-25 | 삼성디스플레이 주식회사 | Thin film trannsistor array panel and manufacturing method thereof |
| CN106486512B (en) * | 2015-08-31 | 2020-02-21 | 上海和辉光电有限公司 | Organic light emitting diode device and organic light emitting display |
| KR20180079011A (en) | 2016-12-30 | 2018-07-10 | 엘지디스플레이 주식회사 | Oragnic Light Emitting Display device having a connecting clad electrode |
| KR102011952B1 (en) * | 2017-11-30 | 2019-08-19 | 엘지디스플레이 주식회사 | Light Emitting Display Device and Manufacturing Method of the same |
| CN114156421B (en) * | 2021-12-02 | 2024-02-13 | 云谷（固安）科技有限公司 | Display panel and display device |
| CN114664785A (en) * | 2022-03-15 | 2022-06-24 | 厦门大学 | Fan-out based Mirco-LED display screen and manufacturing process thereof |
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