CN101657886B - 晶片无电镀覆系统和相关方法 - Google Patents

晶片无电镀覆系统和相关方法 Download PDF

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Publication number
CN101657886B
CN101657886B CN2008800123521A CN200880012352A CN101657886B CN 101657886 B CN101657886 B CN 101657886B CN 2008800123521 A CN2008800123521 A CN 2008800123521A CN 200880012352 A CN200880012352 A CN 200880012352A CN 101657886 B CN101657886 B CN 101657886B
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CN
China
Prior art keywords
wafer
chamber
electroless plating
platen
fluid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008800123521A
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English (en)
Chinese (zh)
Other versions
CN101657886A (zh
Inventor
威廉·蒂
约翰·M·博迪
弗里茨·C·雷德克
耶兹迪·多尔迪
约翰·帕克斯
蒂鲁吉拉伯利·阿鲁娜
亚历山大·奥夫恰茨
托德·巴力斯基
克林特·托马斯
雅各布·卫理
艾伦·M·舍普
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Lam Research Corp
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Lam Research Corp
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Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN101657886A publication Critical patent/CN101657886A/zh
Application granted granted Critical
Publication of CN101657886B publication Critical patent/CN101657886B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1619—Apparatus for electroless plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1619—Apparatus for electroless plating
    • C23C18/1632—Features specific for the apparatus, e.g. layout of cells and of its equipment, multiple cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/043—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroplating

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2008800123521A 2007-04-16 2008-04-11 晶片无电镀覆系统和相关方法 Expired - Fee Related CN101657886B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/735,984 US8069813B2 (en) 2007-04-16 2007-04-16 Wafer electroless plating system and associated methods
US11/735,984 2007-04-16
PCT/US2008/004752 WO2008130517A1 (en) 2007-04-16 2008-04-11 Wafer electroless plating system and associated methods

Publications (2)

Publication Number Publication Date
CN101657886A CN101657886A (zh) 2010-02-24
CN101657886B true CN101657886B (zh) 2012-07-04

Family

ID=39854103

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008800123521A Expired - Fee Related CN101657886B (zh) 2007-04-16 2008-04-11 晶片无电镀覆系统和相关方法

Country Status (6)

Country Link
US (2) US8069813B2 (https=)
JP (1) JP2010525164A (https=)
KR (1) KR101475969B1 (https=)
CN (1) CN101657886B (https=)
TW (1) TWI584356B (https=)
WO (1) WO2008130517A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7752996B2 (en) * 2006-05-11 2010-07-13 Lam Research Corporation Apparatus for applying a plating solution for electroless deposition
US20110143553A1 (en) * 2009-12-11 2011-06-16 Lam Research Corporation Integrated tool sets and process to keep substrate surface wet during plating and clean in fabrication of advanced nano-electronic devices
JP2013104112A (ja) * 2011-11-15 2013-05-30 Sharp Corp 液量制御方法および液量制御装置、半導体集積回路の製造方法、制御プログラム、可読記憶媒体
US9752231B2 (en) 2012-05-11 2017-09-05 Lam Research Corporation Apparatus for electroless metal deposition having filter system and associated oxygen source
US9777380B2 (en) 2015-07-07 2017-10-03 Board Of Regents, The University Of Texas System Multi-layered 3D printed laser direct structuring for electrical interconnect and antennas
JP6546520B2 (ja) * 2015-12-11 2019-07-17 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置

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TW402737B (en) * 1997-05-27 2000-08-21 Tokyo Electron Ltd Cleaning/drying device and method
US6171367B1 (en) * 1997-06-05 2001-01-09 Taiwan Semiconductor Manufacturing Co., Ltd Method and apparatus for delivering and recycling a bubble-free liquid chemical
JPH1192949A (ja) 1997-09-16 1999-04-06 Ebara Corp 半導体ウエハーの配線メッキ装置
WO1999045170A1 (fr) 1998-03-02 1999-09-10 Ebara Corporation Dispositif de placage de substrat
US6258223B1 (en) * 1999-07-09 2001-07-10 Applied Materials, Inc. In-situ electroless copper seed layer enhancement in an electroplating system
JP2001192845A (ja) 2000-01-13 2001-07-17 Tokyo Electron Ltd 無電解メッキ装置及び無電解メッキ方法
JP2001316834A (ja) 2000-04-28 2001-11-16 Sony Corp 無電解メッキ装置および導電膜の形成方法
JP3707394B2 (ja) * 2001-04-06 2005-10-19 ソニー株式会社 無電解メッキ方法
JP2002332597A (ja) * 2001-05-11 2002-11-22 Tokyo Electron Ltd 液処理装置及び液処理方法
US6824612B2 (en) * 2001-12-26 2004-11-30 Applied Materials, Inc. Electroless plating system
JP3979464B2 (ja) * 2001-12-27 2007-09-19 株式会社荏原製作所 無電解めっき前処理装置及び方法
US6913651B2 (en) * 2002-03-22 2005-07-05 Blue29, Llc Apparatus and method for electroless deposition of materials on semiconductor substrates
US7223323B2 (en) * 2002-07-24 2007-05-29 Applied Materials, Inc. Multi-chemistry plating system
US6846519B2 (en) * 2002-08-08 2005-01-25 Blue29, Llc Method and apparatus for electroless deposition with temperature-controlled chuck
US7341634B2 (en) * 2002-08-27 2008-03-11 Ebara Corporation Apparatus for and method of processing substrate
JP3495033B1 (ja) 2002-09-19 2004-02-09 東京エレクトロン株式会社 無電解メッキ装置、および無電解メッキ方法
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Also Published As

Publication number Publication date
JP2010525164A (ja) 2010-07-22
US20080254621A1 (en) 2008-10-16
KR101475969B1 (ko) 2014-12-23
TWI584356B (zh) 2017-05-21
TW200908104A (en) 2009-02-16
KR20090130132A (ko) 2009-12-17
US8069813B2 (en) 2011-12-06
CN101657886A (zh) 2010-02-24
US8314027B2 (en) 2012-11-20
WO2008130517A1 (en) 2008-10-30
US20120045897A1 (en) 2012-02-23

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Granted publication date: 20120704

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CF01 Termination of patent right due to non-payment of annual fee