CN101650530A - Coating and developing device and method - Google Patents
Coating and developing device and method Download PDFInfo
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- CN101650530A CN101650530A CN200910161095A CN200910161095A CN101650530A CN 101650530 A CN101650530 A CN 101650530A CN 200910161095 A CN200910161095 A CN 200910161095A CN 200910161095 A CN200910161095 A CN 200910161095A CN 101650530 A CN101650530 A CN 101650530A
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- 239000011248 coating agent Substances 0.000 title claims abstract description 63
- 238000000576 coating method Methods 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 128
- 238000010438 heat treatment Methods 0.000 claims abstract description 79
- 238000012545 processing Methods 0.000 claims abstract description 66
- 238000011161 development Methods 0.000 claims description 13
- 230000005540 biological transmission Effects 0.000 claims description 11
- 239000012530 fluid Substances 0.000 claims description 8
- 238000012800 visualization Methods 0.000 claims description 7
- 238000007599 discharging Methods 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 148
- 101150034399 CPH1 gene Proteins 0.000 description 18
- 101100222708 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) CPR1 gene Proteins 0.000 description 18
- 239000007788 liquid Substances 0.000 description 12
- 230000018109 developmental process Effects 0.000 description 11
- 101150096424 CPH2 gene Proteins 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000005755 formation reaction Methods 0.000 description 8
- 238000003860 storage Methods 0.000 description 8
- 238000012546 transfer Methods 0.000 description 8
- 238000005260 corrosion Methods 0.000 description 7
- 230000007797 corrosion Effects 0.000 description 7
- 102100026437 Branched-chain-amino-acid aminotransferase, cytosolic Human genes 0.000 description 5
- 101000766268 Homo sapiens Branched-chain-amino-acid aminotransferase, cytosolic Proteins 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000004321 preservation Methods 0.000 description 4
- 230000007261 regionalization Effects 0.000 description 3
- 102100026413 Branched-chain-amino-acid aminotransferase, mitochondrial Human genes 0.000 description 2
- 101000766294 Homo sapiens Branched-chain-amino-acid aminotransferase, mitochondrial Proteins 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000007726 management method Methods 0.000 description 2
- 101100496169 Arabidopsis thaliana CLH1 gene Proteins 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 235000014347 soups Nutrition 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Programme-control systems
- G05B19/02—Programme-control systems electric
- G05B19/418—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
- G05B19/41815—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM] characterised by the cooperation between machine tools, manipulators and conveyor or other workpiece supply system, workcell
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Programme-control systems
- G05B19/02—Programme-control systems electric
- G05B19/418—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
- G05B19/4189—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM] characterised by the transport system
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/31—From computer integrated manufacturing till monitoring
- G05B2219/31002—Computer controlled agv conveys workpieces between buffer and cell
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/45—Nc applications
- G05B2219/45031—Manufacturing semiconductor wafers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Automation & Control Theory (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Quality & Reliability (AREA)
- General Engineering & Computer Science (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Coating Apparatus (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The invention provides a coating and developing device and method, which improves the throughput when the heat treatment temperature of the heating module is altered between the front batch of substrates and the rear batch of substrates. The conveying schedule is produced into the following table: cycle of the following delay cycle number is vacated from the time the final substrate of the front batch is conveyed to the processing portion until the initial substrate of the rear batch is conveyed to the processing portion. The delay cycle number is the cycle number obtained by dividing the required time of the setting processing by the cycle time as the required maximum time for performing a conveying cycle. After the prescribed execution cycle is finished and before the next cycle is started, the appropriate time for executing the next cycle is calculated according to each setting object module, the longest appropriate time is compared with the execution time of the execution cycle, ifthe appropriate time is longer, the main arm is controlled to standby for a time equal to the difference of the appropriate time and the execution time to start the next cycle of the execution cycle.difference between the cycles begin the next cycle.
Description
Technical field
The present invention relates to that a kind of coating of for example semiconductor crystal wafer (wafer), LCD substrate substrates such as (glass substrates that is used for LCD) being carried out liquid against corrosion is handled, the coating of the development treatment after the exposure etc. and developing apparatus and method and storage be used to implement to be coated with and the storage medium of the program of developing method.
Background technology
In the manufacturing process of semiconductor equipment, LCD substrate,, on substrate, form corrosion-resisting pattern (resistpattern) by being called as the technology of photoetching process (photolithography).This technology is to be undertaken by following series of processes: for example be coated with liquid against corrosion on semiconductor crystal wafer substrates such as (hereinafter referred to as wafers), surface at this wafer forms liquid film, after use photomask (photomask) exposes to this etchant resist, carry out development treatment, obtain the pattern of expecting thus.
Usually, be connected corrosion-resisting pattern that exposure device forms on this processing coating that is to use liquid against corrosion and the coating of developing and the developing apparatus and form that device carries out.For example, as shown in Figure 7, in this device, the carrier (carrier) 10 that accommodates a plurality of wafers is moved into the carrier platform 11 of the carrier mounting 1A of portion, and the wafer in the carrier 10 is sent to handling part 1B by transferring arm 12.Then, in handling part 1B, form formation antireflection film in the module (not shown) at antireflection film, in coating module 13, after the formation etchant resist, be transported to exposure device 1D by interface portion 1C.On the other hand, the wafer after the exposure-processed turns back to handling part 1B again, carries out development treatment in visualization module 14, afterwards, turns back in the original carrier 10.In front and back that the formation of above-mentioned antireflection film, etchant resist is handled or the front and back of development treatment, carry out heat treated, the cooling processing of wafer, these carry out the heating module of heat treated, the refrigerating module etc. that carries out cooling processing (is aligned to multistagely, carries wafer by the principal arm 16 (16A, 16B) that is set among the handling part 1B between each module at frame module 15 among the 15a～15c).At this, as patent documentation 1 is put down in writing, when wafer is implemented above-mentioned processing, carry all wafers of subscribing processing according to the time of delivery table, this time of delivery table pre-determines each wafer and which timing (timing) to be transported to which module in.
In addition, in said apparatus, to be discharged to handling part B1 continuously from the carrier mounting 1A of portion as the wafer B of the wafer A of the preceding a collection of A of the set of the wafer of a plurality of identical type of discharging from carrier and a collection of B in back handles, under criticizing A and criticizing the situation of using identical heating module between the B, might between crowd A and crowd B, the heating-up temperature of this heating module be changed.
In the past, in this case, estimate the temperature setting time (changing the required time of temperature) in the above-mentioned heating module, a collection of B regularly carries out timing controlled from the discharge that the carrier mounting 1A of portion discharges to the back.With the time of delivery table shown in Fig. 8 is that example illustrates this timing controlled.The longitudinal axis indication cycle of this time of delivery table, transverse axis is represented the module that is transferred.In addition, FOUP is a carrier, and M1～M5 is a module, in this example, carries out the temperature processing of adjusting in module M4.
And, obtain above-mentioned discharge control time T1 regularly with following (2) formula.
T1＝P+Q-R…(2)
P: the time till the wafer of preceding a collection of A is taken out of from module M4
Q: temperature adjustment time
R: the time till the wafer of a collection of B in back is moved into this module M4
At this, utilization is obtained above-mentioned P with following formula, for example is 15 seconds: (the processing excess time in module M1)+(moving to the processing time of traveling time till the module M2+in module M2)+(moving to the processing time of traveling time till the module M3+in module M3)+(moving to the processing time of traveling time till the module M4+in module M4).
In addition, utilization is obtained above-mentioned R with following formula, for example is 20 seconds: (moving to the processing time of traveling time till the module M1+in module M1)+(moving to the processing time of traveling time till the module M2+in module M2)+(moving to the processing time of traveling time till the module M3+in module M3).
When Q was made as for 30 seconds with the temperature adjustment time, thus, above-mentioned control time T1 was P+Q-R=(15+30)-(20)=25 second.Make the discharge of the initial wafer of a collection of B in back postpone this 25 second.Yet, above-mentioned principal arm 16 be controlled so as to according to the time of delivery watch make cycle length and the slowest processing time (will transmit the time of wafer and handle required time addition and time that obtain) to this module M4 consistent and in this cycle length transport cycle of enforcement, but the number difference of the wafer that shifts by principal arm because the cycle is different in fact, therefore there is situation with the time of lacking or performance period time of length than this cycle length, also exist to produce the situation of following state: wafer is in module M4 after the end process, not immediately by take out of this wafer of principal arm 16 from this module M4, but the reception that standby is undertaken by principal arm 16 in module M4.At this, in the aforementioned calculation formula, do not comprise this stand-by time, therefore even carry out timing controlled as described above, following situation takes place also: the wafer B of a collection of B in back arrives this module M4 or later this module M4 that arrives earlier.
Like this, when the wafer B of a collection of B in back arrives the time change of this module M4 during morning, following situation might take place: because temperature is adjusted to handle and finished in this module M4, therefore can't transmit wafer B to this module, principal arm 16 is had to keep the state standby of this wafer B, can't carry out above-mentioned transport cycle and stops.On the other hand, when the time that arrives this module M4 becomes evening, although the state that the temperature that has been through with among this module M4 is adjusted and handled and can handle takes place originally to be in, also at the state of moving into of module M4 side standby wafer W, and the delivery interval between the wafer A of preceding a collection of A is vacated more than the desirability, providing of wafer B to the back a collection of B of exposure device postpones, and might cause productivity to descend thus.Thereby, at the wafer B of a collection of B in back early or during later arrival module M4, handling capacity (throughput) descends.
In addition, following structure has been proposed: possessing according to first temperature-regulating module in patent documentation 2, the first coating module, first heating module, second temperature-regulating module, the second coating module, second heating module, the order of refrigerating module is come conveying substrate and can be kept out of the way in the device of keeping out of the way module of a plurality of substrates, a collection of last substrate finishes after the heat treated before in second heating module, when the corresponding temperature of substrate that the heating-up temperature with this second heating module changes to and the back is a collection of, the next transport cycle that the substrate of a collection of beginning is transported to the transport cycle second temperature-regulating module from above-mentioned back begins, make with the continuous substrate after the heat treated of in first heating module, carrying out of the substrate of this beginning and be filled up to successively and keep out of the way in the module, in addition, after the heating-up temperature of above-mentioned second heating module of change, the above-mentioned substrate of keeping out of the way in the module is transported in the module in downstream successively.Yet, in this structure, make substrate standby in keeping out of the way module, therefore the time till wafer is finished all processing is elongated sometimes, thereby can't solve problem of the present invention.
Patent documentation 1: TOHKEMY 2004-193597 communique
Patent documentation 2: TOHKEMY 2008-34746 communique
Summary of the invention
The problem that invention will solve
The present invention In view of the foregoing finishes, and its purpose is to provide to adjust in a kind of object module of adjusting between preceding a collection of and back is a collection of and can improves the technology of handling capacity under the situation about handling.
The scheme that is used to deal with problems
Therefore, coating of the present invention and developing apparatus have: carrier mounting portion, its mounting accommodates the carrier of a plurality of substrates, possess and carrier between carry out the transmission of substrate delivery unit; And handling part, it is used for forming coated film at the substrate that transmits from this carrier mounting portion, and the substrate after the exposure is developed,
In above-mentioned handling part, by the substrate supply unit with substrate be transported to substrate carry out temperature adjustment temperature-regulating module, coating fluid is applied to coating module on the substrate, heating module that substrate is heated, substrate is carried out the visualization module of development treatment,
When the position that will place aforesaid substrate is called module (module), according to predefined time of delivery table, form the less substrate substrate bigger of sequence number by the substrate supply unit and be positioned at the state that more leans on the module in downstream than sequence number, carry out a transport cycle thus, after finishing this transport cycle, carry out next transport cycle, carry out the conveying of substrate thus
This coating and developing apparatus are characterised in that to possess with the lower part:
The object module of adjusting, it is made of in above-mentioned coating module and the heating module at least one, in this module to after the preceding a collection of substrate end process of discharging from carrier to before afterwards a collection of substrate is transported to this module, the processing of in this module, adjusting;
Make the unit of time of delivery table, it is made into following table with above-mentioned time of delivery table: in above-mentioned time of delivery table, after preceding a collection of last substrate being sent to above-mentioned handling part till a collection of initial substrate in above-mentioned back is sent to above-mentioned handling part, vacate the cycle of following delay period number, this delay period number is that above-mentioned adjusting handled the periodicity that the required time obtained divided by the cycle length of maximum time required when carrying out a transport cycle; And
Control module, it is in the above-mentioned time of delivery table of made, finish the performance period and before the beginning next cycle, each object module of adjusting is obtained the appropriate time that is used to carry out next cycle, with appropriate time the longest in them be used to carry out the execution time of above-mentioned performance period and compare, under the long situation of above-mentioned appropriate time, the control basal plate supply unit makes the beginning standby of next cycle of above-mentioned performance period be equivalent to the time of above-mentioned appropriate time and the difference of above-mentioned execution time, wherein, the above-mentioned performance period is to have carried out the cycle of processing of adjusting in the above-mentioned object module of adjusting, and is the cycle that has the excess time of the processing of adjusting in this adjusts object module.
At this moment, in order to the above-mentioned appropriate time of following formula computing: { (adjusting in this object module of adjusting handled excess time)+(the above-mentioned execution time of above-mentioned performance period)-(in a collection of substrate in back was moved into cycle in this object module of adjusting, the substrate supply unit was used for carrying out the required time of transmission of this substrate) } ÷ (moved into to a collection of wafer in back cycle of this object module of adjusting till periodicity) from the above-mentioned performance period.In addition, above-mentioned next cycle begin be meant that the substrate supply unit receives the substrate that is sent to handling part from carrier mounting portion.For example, the object module of adjusting is a heating module, and the change that the above-mentioned processing of adjusting is a heating-up temperature is handled.
In addition, coating of the present invention and developing method are coating and the developing methods in coating and the developing apparatus, the coating and developing apparatus have: carrier mounting portion, its mounting accommodates the carrier of a plurality of substrates, possess and carrier between carry out the transmission of substrate delivery unit; And handling part, it is used for forming coated film at the substrate that transmits from this carrier mounting portion, and the substrate after the exposure is developed,
In above-mentioned handling part, by the substrate supply unit with substrate be transported to substrate carry out temperature adjustment temperature-regulating module, coating fluid is applied to coating module on the substrate, heating module that substrate is heated, substrate is carried out the visualization module of development treatment,
When the position that will place aforesaid substrate is called module, according to predefined time of delivery table, form the less substrate substrate bigger of sequence number by the substrate supply unit and be positioned at the state that more leans on the module in downstream than sequence number, carry out a transport cycle thus, after finishing this transport cycle, carry out next transport cycle, carry out the conveying of substrate thus
This coating and developing method be characterised in that,
Coating and developing apparatus possess the object module of adjusting, this object module of adjusting is made of in above-mentioned coating module and the heating module at least one, in this module to after the preceding a collection of substrate end process of discharging from carrier to before afterwards a collection of substrate is transported to this module, the processing of in this module, adjusting;
This coating and developing method possess following operation:
Make the operation of time of delivery table, above-mentioned time of delivery table is made into following table: in above-mentioned time of delivery table, after preceding a collection of last substrate being sent to above-mentioned handling part till a collection of initial substrate in above-mentioned back is sent to above-mentioned handling part, vacate the cycle of following delay period number, this delay period number is that above-mentioned adjusting handled the periodicity that the required time obtained divided by the cycle length of maximum time required when carrying out a transport cycle; And
The control operation, in the above-mentioned time of delivery table of made, finish the performance period and before the beginning next cycle, each object module of adjusting is obtained the appropriate time that is used to carry out next cycle, with appropriate time the longest in them be used to carry out the execution time of above-mentioned performance period and compare, under the long situation of above-mentioned appropriate time, the control basal plate supply unit makes the beginning standby of next cycle of above-mentioned performance period be equivalent to the time of above-mentioned appropriate time and the difference of above-mentioned execution time, wherein, the above-mentioned performance period is to have carried out the cycle of processing of adjusting in the above-mentioned object module of adjusting, and is the cycle that has the excess time of the processing of adjusting in this adjusts object module.
At this moment, in order to the above-mentioned appropriate time of following formula computing: { (adjusting in this object module of adjusting handled excess time)+(the above-mentioned execution time of above-mentioned performance period)-(a collection of substrate in back was moved in cycle in this object module of adjusting, and the substrate supply unit is used to carry out the required time of transmission of this substrate) } ÷ (moved into to a collection of wafer in back cycle of this object module of adjusting till periodicity) from the above-mentioned performance period.
And, storage medium of the present invention is a storage medium of preserving the computer program that is used in coating and developing apparatus, wherein, above-mentioned coating and developing apparatus form coated film by handling part at the substrate of the carrier mounting portion reception of the carrier that accommodates a plurality of substrates from mounting, and the substrate after the exposure is developed, this storage medium is characterised in that said procedure becomes to make to carry out above-mentioned coating and developing method by step group.
The effect of invention
More than, in the present invention, before in the identical object module of adjusting, handling under the situation of a collection of substrate in a collection of substrate and back, after the processing that is through with for substrate a collection of before these, before a collection of substrate in back is handled, under the situation about handling of in this adjusts object module, adjusting, after the processing of adjusting of this module finishes, promptly a collection of substrate in back is transported in this object module of adjusting, can realizes the raising of handling capacity thus.
Description of drawings
Fig. 1 is the vertical view that expression corrosion-resisting pattern involved in the present invention forms the embodiment of device.
Fig. 2 is the stereographic map that the above-mentioned corrosion-resisting pattern of expression forms device.
Fig. 3 is the vertical view of the transport path of the interior wafer W of the handling part in the above-mentioned corrosion-resisting pattern formation of the expression device.
Fig. 4 is the structural drawing that the above-mentioned corrosion-resisting pattern of expression forms the part of the control part in the device.
Fig. 5 is the process chart that the above-mentioned corrosion-resisting pattern of explanation forms the effect of device.
Fig. 6 is that expression is used in the time of delivery table that above-mentioned corrosion-resisting pattern forms an example of the time of delivery table in the device.
Fig. 7 be represent in the past coating and the vertical view of developing apparatus.
Fig. 8 is a structural drawing of representing an example of time of delivery table in the past.
Description of reference numerals
W: semiconductor crystal wafer; C: carrier; B1: carrier mounting portion; B2: handling part; B3: interface portion; B4: exposure portion; A1, A2: principal arm; 24: delivery unit; 4: control part; 43: the handling part of adjusting; 44: time of delivery table preparing department; 45: Opportunity awaiting control for linear portion; 46: carry control part.
Embodiment
At first, on coating of the present invention and developing apparatus, be connected the corrosion-resisting pattern that exposure device forms with reference to description of drawings and form device 2.Fig. 1 illustrates the vertical view of an embodiment of said apparatus, and Fig. 2 is this summary stereographic map.Among the figure B1 be used for to sealing accommodate 13 substrates for example the support C of wafer W move into the carrier mounting portion that takes out of, be provided with the lower part: carrier station 22, it can arrange the mounting portion 21 of a plurality of support C of mounting; Switching portion 23 is on the wall in the place ahead when it is set at from 22 observations of this carrier station; And delivery unit 24, it is used for taking out wafer W from above-mentioned support C, and is sent to handling part B2 described later.
Inboard at the above-mentioned carrier mounting B1 of portion is connected with the handling part B2 that is surrounded by housing 25 on every side, in this handling part B2, alternately be disposed with frame module U1, U2, U3 and principal arm A (A1, A2) from its nearside, wherein, above-mentioned frame module U1, U2, U3 are the modules of successively module of heating/cooling system having been carried out multipolarity, above-mentioned principal arm A (A1, A2) forms the substrate supply unit, and this substrate supply unit carries out the transmission of wafer W between each module of these frame modules U1～U3 and liquid treatment module U4 described later, U5.Promptly, when the carrier mounting B1 of portion side is observed, row before and after frame module U1, U2, U3 and principal arm A1, A2 are aligned to, be formed with not shown wafer and carry the peristome of usefulness on each connecting portion, wafer W can freely move to another distolateral frame module U3 from a distolateral frame module U1 in handling part B2.
Above-mentioned frame module U1, U2, U3 constitute with the various modules that are used for carrying out the pre-treatment of the processing that liquid treatment module U4, U5 carry out and aftertreatment stacked multistage, for example 10 grades, its combination comprises: delivery module TRS; Be used for wafer W is adjusted into the temperature-regulating module CPL of set point of temperature; Be used for wafer W is carried out the heating module CLH of heat treated; Be used for after coating liquid against corrosion, wafer W being carried out the heating module CPH of heat treated; Before development treatment, wafer W is carried out the heating module PEB of heat treated; And the heating module POST etc. that the wafer W after the development treatment is carried out heat treated.
In addition, for example, as shown in Figure 2, the liquid handling mould determine U4, U5 will form the antireflection film that wafer W coating antireflection film forms the soup of usefulness module BCT, to wafer W be coated with liquid against corrosion coating module COT, to wafer W developer solution is provided and carry out the visualization module DEV etc. of development treatment stacked multistage, for example 5 grades and constitute.
The inboard of frame module U3 in above-mentioned handling part B2 connects the exposure B4 of portion by interface portion B3.This interface portion B3 is made of first conveying chamber 31 and second conveying chamber 32 of front and back setting between handling part B2 and the B4 of exposure portion, possesses difference lifting freedom and rotates freedom and advance and retreat first conveying arm 33 and second conveying arm 34 freely around vertical axis.In addition, in first conveying chamber 31, be provided with frame module U6, for example with stacked on top of one another such as delivery modules and be arranged among this frame module U6.
As above-mentioned heating module CPH, for example use the device of following structure: for example possess and be used for wafer W is positioned in the heating plate that heats on it and the coldplate of double as conveying arm, carry out the transmission of the wafer W between principal arm A and the heating plate by coldplate, promptly can in a module, heat cooling.
Above-mentioned principal arm A is described.This principal arm A constitutes that all moulds in above-mentioned handling part B2 are determined (position that wafer W is placed), carry out the transmission of wafer between each module of each processing module of for example frame module U1～U3, liquid treatment module U4, U5.Therefore, above-mentioned principal arm A constitutes that advance and retreat are free, lifting is free, it is free to rotate around vertical axis, and constitutes two keeping arms and these keeping arms of possessing the rear side peripheral edge margin that is used to support wafer W and can separately advance and retreat.
The example that flows of wafer W in this corrosion-resisting pattern formation system is described with reference to Fig. 3, be positioned in the delivery module TRSA that wafer W in the support C on the carrier mounting B1 of portion is sent to the frame module U1 of handling part B2, path by temperature-regulating module CPL → antireflection film formation module BCT → heating module CLH → temperature-regulating module CPL → coating module COT → delivery module TRS → heating module CPH → interface portion B3 → B4 of exposure portion is transferred from here, thereby carries out exposure-processed in the B4 of this exposure portion.On the other hand, wafer W after the exposure-processed turns back to handling part B2, path by the delivery module TRSA of heating module PEB → temperature-regulating module CPL → visualization module DEV → heating module POST → temperature-regulating module CPL → frame module U1 is transferred, and turns back to the support C of the carrier mounting B1 of portion from this.
At this moment, constitute as follows in handling part B2: principal arm A (A1, A2) receives wafer from the delivery module TRSA of frame module U1, with this wafer by temperature-regulating module CPL etc. after above-mentioned transport path is transported to heating module CPH successively, receive wafer W after the exposure-processed from interface portion B3, this wafer is transported to delivery module TRSA by heating module PEB etc. successively along above-mentioned transport path, like this, in handling part B2, carry out transport cycle.As shown in Figure 3, in this transport cycle, the conveying till from delivery module TRSA to temperature-regulating module CPL is the initial conveying that utilizes principal arm A to carry out, and in this case, above-mentioned delivery module TRSA becomes the beginning module of transport cycle.Wafer W is sent to this delivery module TRSA from the carrier mounting B1 of portion, therefore wafer W is sent to just to be equivalent among this delivery module TRSA wafer W is sent among the handling part B2, begins transport cycle by receiving principal arm A from delivery module TRSA.
And, above-mentioned corrosion-resisting pattern forms device and possesses control part 4, this control part 4 is made of computing machine, this computing machine carries out the management of process recipe (recipe) to each processing module, conveying flow process (transport path) to wafer W is carried out the management of process recipe, carry out the processing in each processing module, delivery unit 24, principal arm A1, A2 etc. are carried out drive controlling.This control part 4 for example has the program preservation portion that is made of computer program, preservation possesses step (order) group's the program that for example is made of software in this program preservation portion, and above-mentioned steps group is used for wafer W is formed the step group of the processing of each processing module of the corrosion-resisting pattern of stipulating, the conveying of wafer W etc. for the effect of implementing corrosion-resisting pattern formation device integral body, i.e. enforcement.And,, control by the effect that 4 pairs of corrosion-resisting patterns of control part form device integral body by reading these programs by control part 4.In addition, this program for example is saved in the program preservation portion with the state that is accommodated in storage mediums such as floppy disk, hard disk, CD, magneto-optic disk, storage card.
Fig. 4 is the figure of the structure of this control part 4 of expression, in fact by formations such as CPU (central processing module), program and storeies, but be characterised in that the conveying of the wafer W before the development treatment in the present invention, therefore, this will be relevant with this control part 4 the part of textural element carry out modularization and describe.In Fig. 4, the 40th, bus is connected with process recipe preservation portion 41, process recipe selection portion 42, the handling part 43 of adjusting, time of delivery table preparing department 44, Opportunity awaiting control for linear portion 45, carries control part 46 on this bus 40.
Process recipe preservation portion 41 is the positions that are equivalent to storage part, for example preserves and carries process recipe or a plurality of process recipe, and this conveying process recipe records the transport path of wafer W, and these a plurality of process recipe record treatment conditions that wafer W is carried out etc.Process recipe selection portion 42 is to select the position of suitable process recipe in the process recipe from be kept at process recipe preservation portion 41, the temperature in the time of for example can also importing kind, the heat treated of processing number, the resist of wafer etc.
The handling part 43 of adjusting is as lower unit: finish predetermined process the wafer A as a collection of (lot) (hereinafter referred to as " crowd A ") of the set of the substrate of a plurality of identical type of discharging from carrier is adjusting object module after, to the adjust instruction of the meaning handled of this module output.Above-mentioned adjust handle be meant that the temperature change is handled, processing that the state to module of adjustment such as virtual assigned (dummy dispense) the processings processing among the coating module COT etc. is adjusted.In this example, the object module of adjusting is heating module CPH, and adjusting in this module handled and to be meant heating-up temperature is changed to processing with the corresponding temperature of wafer B of follow-up other batch (hereinafter referred to as " crowd B ").Thereby, after the heat treated in this heating module CPH of the wafer A that criticizes A finishes, heating module CPH is exported the instruction of the temperature change of carrying out heating plate.
Time of delivery table preparing department 44 is as lower unit: according to above-mentioned conveying process recipe, make batch interior all wafers which regularly is transported to the timetable of the content of which module and so at, for example be the time of delivery table of making according to time series arrangement transport cycle data, these transport cycle data are to the wafer Allotment Serial Number and make the sequence number of wafer and the data that each module is specified transport cycle accordingly.At this moment, in this time of delivery table preparing department 44, the time of delivery table is made into following table: after the last wafer A with preceding a collection of A is sent to above-mentioned handling part B2, till being sent to above-mentioned handling part B2 to initial wafer B with a collection of B in above-mentioned back, vacate the cycle of following delay period number, this delay period number is that above-mentioned adjusting handled required maximum time, cycle length and periodicity of obtaining when carrying out a transport cycle of required time.
Opportunity awaiting control for linear portion 45 is unit of as follows principal arm A being controlled: in above-mentioned time of delivery table, before performance period that finishes regulation and beginning next cycle, each object module of adjusting is obtained the appropriate time that is used to carry out next cycle, the longest appropriate time in them and the execution time of above-mentioned performance period are compared, in due course under the long situation, make the beginning standby of the next cycle of above-mentioned performance period be equivalent to the time of appropriate time and the difference of above-mentioned execution time.
Carrying control part 46 is as lower unit: with reference to above-mentioned time of delivery table delivery unit 24, principal arm A1, A2 are controlled, make the wafer that will be written in the transport cycle data be transported in the module corresponding with this wafer, carry out transport cycle thus.
The effect of present embodiment then, is described with reference to Fig. 5 and Fig. 6.At first, before beginning the wafer W as substrate handled, the operator carries out the selection of process recipe, and is such as mentioned above at this, is that example describes to form antireflection film as coated film and the situation that forms etchant resist thereon.In the present invention, be characterised in that the transport path of the wafer W till the object module of adjusting, therefore, below with the heating module CPH after etchant resist is formed carry out temperature adjust situation about handling be example and be conceived to this heating module CPH till transport path describe.
As shown in Figure 5, at first, the operator selects to form the process recipe (step S1) under the situation of the coated film that has possessed antireflection film and etchant resist to five wafer B01～B05 of five the wafer A01～A05 of crowd A and follow-up crowd B.Then, according to selected process recipe, time of delivery table preparing department 44 makes the time of delivery table (step S2) of crowd A and crowd B.
At this moment, the time of delivery table is made into following table: between crowd A and crowd B, make the suitable time of delay period number that discharge postpones and utilization is obtained with following formula (2) to the wafer of delivery module TRSA from the carrier mounting B1 of portion.
Delay period number=adjust processing time ÷ cycle length ... (2)
The above-mentioned processing time of adjusting is to adjust to handle the required time, is meant that in this example the temperature of heating module CPH is adjusted the required time of processing, for example is 90 seconds.In addition, being meant a maximum time that transport cycle is required that is used to carry out the time of delivery table cycle length, was 22.8 seconds in this example.Thereby, become delay period number=90 ÷ 22.8 second=3.95 in second, rounding up is 4.
At this, the slowest processing time within the module in the handling part B2 (will and handle the time that the required time addition obtains delivery time of the wafer of this module) becomes the control speed time in this transport cycle, therefore should fast time of control become cycle length.
Fig. 6 illustrates an example of above-mentioned time of delivery table.In this figure, the longitudinal axis is the cycle, and each module is documented in the transverse axis successively according to the transport path of wafer W, in different types of module, the module in left side is the module of the upstream side of transport path among Fig. 6, becomes the module in the downstream of transport path more the closer to the right side.In addition, in conveyor module, BCT1, BCT2 mean that using two antireflection films formation modules, CPH1～CPH5 to mean uses five heating modules.
Above-mentioned principal arm A possesses plural keeping arm, wafer in the module in downstream is transferred to the module of a back sequence number successively, form the less wafer of the sequence number wafer bigger thus and be positioned at the state that more leans on the module in downstream than sequence number, carry out one-period (transport cycle) thus, after this cycle of end, transfer to next cycle, carry out each cycle successively, in above-mentioned path, carry wafer successively thus, carry out predetermined process by sequence number.
In this time of delivery table, the initial wafer A01 of crowd A is moved among the antireflection film formation module BCT1 in the cycle 3, and this wafer A01 also is carried out processing in this antireflection film forms module BCT1 in the cycle 4.In the cycle 5, a keeping arm by principal arm A is taken out of above-mentioned wafer A01 from this antireflection film formation module BCT1, move into this antireflection film and form among module BCT1 remaining on wafer A03 on another keeping arm of principal arm A, then, move into module that antireflection film forms the downstream of module BCT2, be among the heating module CLH1 remaining on wafer A01 on the above-mentioned keeping arm.
Return the delay period number and describe, as mentioned above, the delay period number is 4, therefore the time of delivery table is made into following table: make from the carrier mounting B1 of portion to postpone the time suitable with this delay period number to the discharge of the wafer of delivery module TRSA.That is to say, the time of delivery table is made into following table: after the last wafer A05 of crowd A was sent to delivery module TRSA, the initial wafer B01 that periodicity 4 will be criticized B as idling cycle after vacating was sent to delivery module TRSA.That is to say, the last wafer A05 of crowd A is sent to delivery module TRSA in the cycle 5 after, periodicity 4 is vacated as idling cycle that afterwards, the initial wafer B01 of crowd B is sent to delivery module TRSA in the cycle 10.
Then, control part 4 on one side with reference to the time of delivery table of made on one side to each output indication, the wafer A of crowd A carried out handles (step S3), carry out the cycle 22 according to the time of delivery table like this till.At this moment, the temperature that in the cycle 22, begins the to carry out heating module CPH1 processing (step S4) of adjusting.In addition, the oblique line in the time of delivery table of Fig. 6 partly means and carries out the temperature processing of adjusting.
Then, in Opportunity awaiting control for linear portion 45, meeting the following conditions (1), finish times of (2) both performance periods judges whether principal arm A was carried out Opportunity awaiting control for linear before next cycle begins.At this, next cycle is meant that principal arm A turns back to the beginning module of closing on transport cycle, is the position of conveyor module TRSA and the moment that will begin next cycle from here before beginning.In addition, the Opportunity awaiting control for linear of principal arm A is meant following control: make the arm A standby stipulated time and receive wafer from above-mentioned conveyor module TRSA.
Condition (1): the process in this past that existing in has carried out in some object modules of adjusting adjusting handles
Condition (2): have the excess time of adjusting and handling
At this, condition (1) is described, the process in this past that existing in has carried out in some object modules of adjusting adjusting handles is to mean to carry out the processing of adjusting in the object module of adjusting, in this example, therefore processings because the temperature that beginning is handled as adjusting in the cycle 22 in heating module CPH1 is adjusted be equivalent to exist in the moment in the cycle of being through with 22 process in this past of the processing of having carried out among this heating module CPH1 adjusting.Thereby, in illustrated time of delivery table, just become the finish time in 22～cycle of cycle 29 finish time in the cycle of satisfy condition (1).
In addition,, in this example, in heating module CPH1, in the cycle 25, finish to adjust, therefore just be equivalent to exist the cycle of excess time of handling of adjusting till 24 from the cycle 22 to the cycle as the temperature of handling of adjusting about condition (2).Thereby, in illustrated time of delivery table, the finish time that just becomes 22～cycle of cycle 28 finish time in the cycle of satisfy condition (2).
According to more than, in this time of delivery table, satisfy above-mentioned condition (1), the finish time that is meant 22～cycle of performance period 28 finish time of (2) both performance periods, in these performance periods 22～28, before beginning next cycle 23～29, distinguish the appropriate time T2 of computing principal arm A, and judge whether principal arm A is carried out Opportunity awaiting control for linear according to this operation result.At this, above-mentioned appropriate time T2 is meant that principal arm A is used to carry out the ideal time of the next cycle of above-mentioned performance period, carries out computing according to following (3) formula.
Appropriate time T2=(I+II-III) ÷ IV ... (3)
I: adjusting in this object module of adjusting handled excess time
II: the execution time of performance period
III: the wafer B of follow-up crowd of B is moved into the transfer time of the principal arm A in cycle in this object module of adjusting
IV: the wafer B from the performance period to follow-up crowd of B is moved into the periodicity till this object module of adjusting
Specifically describe in cycles 22 and finish and the computing of the appropriate time T2 of the principal arm A of cycle 23 will begin the time.In this case, the performance period is the cycle 22, and the object module of adjusting is heating module CPH1, and I～IV is as follows.In addition, the execution time of performance period (II) is meant the time required when reality is carried out this performance period, and it is because the control that does not have to implement to carry with fixed intervals that this execution time changes.
I:73 second
II: the execution time of performance period 22 was 26 seconds
III: the cycle of wafer B01 being moved into this heating module CPH1 is the cycle 26, and the wafer W that is transferred in this cycle 26 is B05, B02, B01, and be 9.5 seconds its transfer time
IV: the periodicity till the performance period 22 to the cycle of wafer B01 being moved into this heating module CPH1 26 is (26-22), promptly 4.
Thus, be T2=(73+26-9.5) ÷ 4=22.375 second → 22.4 second (step S5) with (3) formula with above-mentioned appropriate time T2 computing.
And,, this appropriate time T2 and the execution time of performance period 22 (26 second) are compared about whether principal arm A being carried out Opportunity awaiting control for linear, T2 is than under the long situation in due course, be judged as the Opportunity awaiting control for linear of carrying out principal arm A, under short situation, be judged as and do not carry out above-mentioned Opportunity awaiting control for linear.In this example, appropriate time T2＜execution time, therefore be judged as and do not carry out above-mentioned Opportunity awaiting control for linear, principal arm A is not carried out Opportunity awaiting control for linear and carries out next cycle 23 (step S6).
Then, similarly, illustrate in cycles 23 and finish and the Opportunity awaiting control for linear of the principal arm of cycle 24 will begin the time.In this case, performance period is the cycle 23, the object module of adjusting is heating module CPH1 and heating module CPH2, appropriate time T2 under each situation is carried out computing (step S7), some long appropriate time T2 and the execution time of performance period 23 are compared, judge whether to carry out the Opportunity awaiting control for linear (step S8) of principal arm.
At first, about heating module CPH1, I～IV is as follows.
I:53 second
II: the execution time of performance period 23 was 20 seconds
III: wafer B01 is moved among this heating module CPH1 in the cycle 26, and therefore, as mentioned above, be 9.5 seconds its transfer time
IV: moved into periodicity till the cycle 26 this heating module CPH1 from the performance period 23 to wafer B01 and be (26-23), promptly 3
Thus, be T2=(53+20-9.5) ÷ 3=21.167 second → 21.2 seconds with (3) formula with above-mentioned appropriate time T2 computing.
Similarly, about heating module CPH2, I～IV is as follows.
I:77 second
II: the execution time of performance period 23 was 20 seconds
III: wafer B02 is moved into this heating module CPH2 in the cycle 27, and the wafer W that is transferred in this cycle 27 is B02, B03, and be 6 seconds its transfer time
IV: moved into periodicity till the cycle 27 this heating module CPH2 from the performance period 23 to wafer B02 and be (27-23), promptly 4.
Thus, be T2=(77+20-6) ÷ 4=22.75 second → 22.8 seconds with (3) formula with above-mentioned appropriate time T2 computing.
Like this, the appropriate time T2 among the heating module CPH1 was 21.2 seconds, and the appropriate time T2 among the heating module CPH2 was 22.8 seconds, therefore will compare with the execution time (20 second) of performance period 23 than long appropriate time T2 (22.8 second).In this case, appropriate time T2＞execution time, therefore, obtain the stand-by time T3 of principal arm according to (appropriate time T2-execution time).In this case, it is second=2.8,22.8 second-20 seconds that stand-by time T3 is obtained, for example, and the Opportunity awaiting control for linear that principal arm A is rounded up 3 seconds of drawing.That is to say, in this example, in the time of after the performance period 23 finishes, will beginning next cycle 24, principal arm A is on the position of closing on as the delivery module TRSA of the starting point in cycle, by the timer standby adjustment time suitable (3 second) with stand-by time afterwards, receive wafer B05 from heating module CLH4, begin the cycle 24 (step S8) by this way.
And, illustrate in cycles 24 and finish and the Opportunity awaiting control for linear of the principal arm A of cycle 25 will begin the time.In this case, the object module of adjusting is heating module CPH1, heating module CPH2, heating module CPH3, and the performance period is the cycle 24.
At first, about heating module CPH1, I～IV is as follows.
I:33 second
II: the execution time of performance period 24 was 20 seconds
III: wafer B01 is moved among this heating module CPH1 in the cycle 26, and as mentioned above, be 9.5 seconds the transfer time in this cycle 26
IV: moved into periodicity till the cycle 26 this heating module CPH1 from the performance period 24 to wafer B01 and be (26-24), promptly 2.
Thus, be T2=(33+20-9.5) ÷ 2=21.75 second → 21.8 seconds with (3) formula with appropriate time T2 computing.
Then, about heating module CPH2, I～IV is as follows.
I:57 second
II: the execution time of performance period 24 was 20 seconds
III: wafer B02 is moved among this heating module CPH2 in the cycle 27, and as mentioned above, be 6 seconds transfer time in this cycle 27
IV: moved into periodicity till the cycle 27 this heating module CPH2 from the performance period 24 to wafer B02 and be (27-24), promptly 3
Thus, be T2=(57+20-6) ÷ 3=23.67 second → 23.7 seconds with (3) formula with appropriate time T2 computing.
At last, about heating module CPH3, I～IV is as follows.
I:76 second
II: the execution time of performance period 24 was 20 seconds
III: wafer B03 is moved among this heating module CPH3 in the cycle 28, and the wafer W that is transferred in this cycle 28 is B04, B03, and be 6 seconds its transfer time
IV: moved into periodicity till the cycle 28 this heating module CPH3 from the performance period 24 to wafer B03 and be (28-24), promptly 4.
Thus, be T2=(76+20-6) ÷ 4=22.5 second with (3) formula with appropriate time T2 computing.
Like this, appropriate time T2 among the heating module CPH1 was 21.8 seconds, appropriate time T2 among the heating module CPH2 was 23.7 seconds, appropriate time T2 among the heating module CPH3 is 22.5 seconds (step S9), and appropriate time T2 (23.7 second) that therefore will be the longest compared with the execution time (20 second) of performance period 24.In this case, appropriate time T2＞execution time, therefore, obtain the stand-by time T3 (3.7 second → round up be 4 seconds) of principal arm A according to (appropriate time T2-execution time), principal arm A standby begins next cycle 25 (step S10) after 4 seconds.
As more than, 22～cycle of cycle 28 is made as the performance period, before finishing these performance periods and beginning next cycle, each object module of adjusting is obtained the appropriate time that is used to carry out next cycle, the longest appropriate time in them and the execution time of above-mentioned performance period are compared, under the situation than length in due course, principal arm A is controlled the next cycle that makes principal arm A standby be equivalent to the time of appropriate time and the difference of above-mentioned execution time and begin the above-mentioned performance period on one side, according to above-mentioned time of delivery table carry out remaining cycle on one side.
Form in the device at this corrosion-resisting pattern, under the situation about handling of adjusting even adjust under the situation about in handling part B2, the wafer B of the wafer A of preceding a collection of A and a collection of B in back being handled continuously and between in the object module, also can suppress to produce wafer B is delivered to the timing advance of this module or this situation of delay the processing of the wafer A of crowd A and processing to the wafer B of crowd B.
That is to say, at first when making the time of delivery table, vacate and adjust and handle required time in the suitable cycle, discharge wafer W from the carrier mounting B1 of portion to handling part B2, therefore can suppress to produce wafer B be transported to this module timing advance and before this processing of adjusting finishes wafer B be transported to the situation of this module.
Like this, prevent that before this processing of adjusting finishes wafer B is transported to the situation of this module, therefore can suppress to produce following situation: wafer B can't be sent to this module, the state standby that principal arm A keeps this wafer B with former state can't be carried out above-mentioned transport cycle and stops.Thus, principal arm A can not be stopped and can carry out the time of delivery table successively under stable status, therefore successfully carries out the conveying of wafer, thereby can improve handling capacity.
In addition, satisfying in the cycle of rated condition, obtain the appropriate time T2 when carrying out next cycle, when also growing in the execution time of this time ratio performance period, by timer principal arm A is controlled, make principal arm A standby be equivalent to the time of (appropriate time T2-execution time) and receive wafer W from the beginning module of transport cycle, suppress wafer B is delivered to the timing change evening of this module thus, thereby after the processing of adjusting finishes, can immediately wafer B01 be moved in this object module of adjusting.Therefore, vacate the above delivery interval of desirability between the wafer A of inhibition and preceding a collection of A, the wafer that can prevent exposure device provides the situation that becomes evening.Like this, the conveying of wafer can be successfully carried out, therefore on this point, also handling capacity can be improved from handling part B2 to exposure device B4.
At this, like that, ideal time of the next cycle of performance period is obtained, is used to carry out to this appropriate time consider to adjust process in the past such as execution time that adjusting in the object module handle excess time, performance period shown in above-mentioned (3) formula.And, when the performance period finishes, obtain this appropriate time, this appropriate time and execution time are compared, only between in due course under the long situation, principal arm is carried out Opportunity awaiting control for linear, can revise the time of carrying out next cycle thus when the performance period finishes, the mode that can begin next cycle thus with the required MIN time of standby is when needed controlled.Relative therewith, in control method in the past, with the cycle length as maximum time of transport cycle be that benchmark is controlled, therefore to compare stand-by time too long with the situation that the present invention obtains appropriate time to each performance period like that, elongated to the time of wafer B being moved into till this object module of adjusting after the processing of adjusting of module finishes.
More than, as the object module of adjusting of the present invention, except can using heating module, can also use the coating module.This coating module is following structure: (spin chuck) keeps wafer W rotationally by rotary chuck, coating fluid is dropped onto on the wafer W on this rotary chuck from the coating nozzle, rotate this wafer W, coating fluid is applied on the wafer W thus, but the processing of adjusting in this case is to handle from the virtual assigned of nozzle ejection coating fluid in advance before coating fluid is offered substrate.In addition, handle in all preparations that being used to of handling etc. carry out the processing of wafer of adjusting of the illumination of the temperature adjustment processing that comprises liquid against corrosion in handling of adjusting, periphery exposure device.
And, the present invention can also be applied in the conveying control of the wafer W in following coating and the developing apparatus: the piece that is used to form etchant resist that the coating parts that comprise liquid against corrosion and antireflection film are formed parts with carry out certainly separating of development treatment, determine towards the conveying road of the conveying Lu Yucong of exposure device exposure device from carrier thereby form wafer respectively independently towards carrier block.In addition, the present invention not only can be applied to semiconductor crystal wafer, can also be applied in the coating and developing apparatus that the substrate of the glass substrate (LCD substrate) and so on to using as LCD handles.
Claims (6)
- One kind the coating and developing apparatus, have: carrier mounting portion, its mounting accommodates the carrier of a plurality of substrates, possess and carrier between carry out the transmission of substrate delivery unit; And handling part, it is used for forming coated film at the substrate that transmits from this carrier mounting portion, and the substrate after the exposure is developed,In above-mentioned handling part, by the substrate supply unit with substrate be transported to substrate carry out temperature adjustment temperature-regulating module, coating fluid is applied to coating module on the substrate, heating module that substrate is heated, substrate is carried out the visualization module of development treatment,When the position that will place aforesaid substrate is called module, according to predefined time of delivery table, form the less substrate substrate bigger of sequence number by the substrate supply unit and be positioned at the state that more leans on the module in downstream than sequence number, carry out a transport cycle thus, after finishing this transport cycle, carry out next transport cycle, carry out the conveying of substrate thusThis coating and developing apparatus are characterised in that to possess with the lower part:The object module of adjusting, it is made of in above-mentioned coating module and the heating module at least one, in this module to after the preceding a collection of substrate end process of discharging from carrier to before afterwards a collection of substrate is transported to this module, the processing of in this module, adjusting;Make the unit of time of delivery table, it is made into following table with above-mentioned time of delivery table: in above-mentioned time of delivery table, after preceding a collection of last substrate being sent to above-mentioned handling part till a collection of initial substrate in above-mentioned back is sent to above-mentioned handling part, vacate the cycle of following delay period number, this delay period number is that above-mentioned adjusting handled the periodicity that the required time obtained divided by the cycle length of maximum time required when carrying out a transport cycle; AndControl module, it is in the above-mentioned time of delivery table of made, finish the performance period and before the beginning next cycle, each object module of adjusting is obtained the appropriate time that is used to carry out next cycle, with appropriate time the longest in them be used to carry out the execution time of above-mentioned performance period and compare, under the long situation of above-mentioned appropriate time, the control basal plate supply unit makes the beginning standby of next cycle of above-mentioned performance period be equivalent to the time of above-mentioned appropriate time and the difference of above-mentioned execution time, wherein, the above-mentioned performance period is to have carried out the cycle of processing of adjusting in the above-mentioned object module of adjusting, and is the cycle that has the excess time of the processing of adjusting in this adjusts object module.
- 2. coating according to claim 1 and developing apparatus is characterized in that,In order to the above-mentioned appropriate time of following formula computing: { (adjusting in this object module of adjusting handled excess time)+(the above-mentioned execution time of above-mentioned performance period)-(in a collection of substrate in back was moved into cycle in this object module of adjusting, the substrate supply unit was used for carrying out the required time of transmission of this substrate) } ÷ (moved into to a collection of wafer in back cycle of this object module of adjusting till periodicity) from the above-mentioned performance period.
- 3. coating according to claim 1 and 2 and developing apparatus is characterized in that,The beginning of above-mentioned next cycle is meant that the substrate supply unit receives the substrate that is sent to handling part from carrier mounting portion.
- 4. coating according to claim 1 and 2 and developing apparatus is characterized in that,The object module of adjusting is a heating module, and the change that the above-mentioned processing of adjusting is a heating-up temperature is handled.
- 5. coating and developing method are coating and the developing methods in coating and the developing apparatus, are coated with and developing apparatus has: carrier mounting portion, its mounting accommodates the carrier of a plurality of substrates, possess and carrier between carry out the transmission of substrate delivery unit; And handling part, it is used for forming coated film at the substrate that transmits from this carrier mounting portion, and the substrate after the exposure is developed,In above-mentioned handling part, by the substrate supply unit with substrate be transported to substrate carry out temperature adjustment temperature-regulating module, coating fluid is applied to coating module on the substrate, heating module that substrate is heated, substrate is carried out the visualization module of development treatment,When the position that will place aforesaid substrate is called module, according to predefined time of delivery table, form the less substrate substrate bigger of sequence number by the substrate supply unit and be positioned at the state that more leans on the module in downstream than sequence number, carry out a transport cycle thus, after finishing this transport cycle, carry out next transport cycle, carry out the conveying of substrate thusThis coating and developing method be characterised in that,Coating and developing apparatus possess the object module of adjusting, this object module of adjusting is made of in above-mentioned coating module and the heating module at least one, in this module to after the preceding a collection of substrate end process of discharging from carrier to before afterwards a collection of substrate is transported to this module, the processing of in this module, adjusting;This coating and developing method possess following operation:Make the operation of time of delivery table, above-mentioned time of delivery table is made into following table: in above-mentioned time of delivery table, after preceding a collection of last substrate being sent to above-mentioned handling part till a collection of initial substrate in above-mentioned back is sent to above-mentioned handling part, vacate the cycle of following delay period number, this delay period number is that above-mentioned adjusting handled the periodicity that the required time obtained divided by the cycle length of maximum time required when carrying out a transport cycle; AndThe control operation, in the above-mentioned time of delivery table of made, finish the performance period and before the beginning next cycle, each object module of adjusting is obtained the appropriate time that is used to carry out next cycle, with appropriate time the longest in them be used to carry out the execution time of above-mentioned performance period and compare, under the long situation of above-mentioned appropriate time, the control basal plate supply unit makes the beginning standby of next cycle of above-mentioned performance period be equivalent to the time of above-mentioned appropriate time and the difference of above-mentioned execution time, wherein, the above-mentioned performance period is to have carried out the cycle of processing of adjusting in the above-mentioned object module of adjusting, and is the cycle that has the excess time of the processing of adjusting in this adjusts object module.
- 6. coating according to claim 5 and developing method is characterized in that,In order to the above-mentioned appropriate time of following formula computing: { (adjusting in this object module of adjusting handled excess time)+(the above-mentioned execution time of above-mentioned performance period)-(a collection of substrate in back was moved in cycle in this object module of adjusting, and the substrate supply unit is used to carry out the required time of transmission of this substrate) } ÷ (moved into to a collection of wafer in back cycle of this object module of adjusting till periodicity) from the above-mentioned performance period.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008-207325 | 2008-08-11 | ||
| JP2008207325 | 2008-08-11 | ||
| JP2008207325A JP4640469B2 (en) | 2008-08-11 | 2008-08-11 | Coating and developing apparatus, method and storage medium |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107479339A (en) * | 2017-09-01 | 2017-12-15 | 京东方科技集团股份有限公司 | Developing apparatus and its developing method |
| CN111968935A (en) * | 2019-05-20 | 2020-11-20 | 东京毅力科创株式会社 | Substrate processing apparatus and substrate processing method |
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| KR102207311B1 (en) * | 2019-05-08 | 2021-01-27 | 세메스 주식회사 | Substrate treating method and substrate treating apparatus |
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| JP2002184671A (en) * | 2000-12-14 | 2002-06-28 | Tokyo Electron Ltd | Method and system for substrate treatment |
| JP4087328B2 (en) * | 2002-11-28 | 2008-05-21 | 東京エレクトロン株式会社 | Coating and developing apparatus and operating method of coating and developing apparatus |
| JP4233908B2 (en) * | 2003-04-02 | 2009-03-04 | 東京エレクトロン株式会社 | Substrate processing system |
| JP4080405B2 (en) * | 2003-09-22 | 2008-04-23 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
| JP4509820B2 (en) * | 2005-02-15 | 2010-07-21 | 東京エレクトロン株式会社 | Heat treatment plate temperature setting method, heat treatment plate temperature setting device, program, and computer-readable recording medium recording the program |
| JP2007158110A (en) * | 2005-12-06 | 2007-06-21 | Dainippon Screen Mfg Co Ltd | Substrate treatment apparatus |
| JP2008034746A (en) * | 2006-07-31 | 2008-02-14 | Tokyo Electron Ltd | Coating and developing device, method therefor and storage medium |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107479339A (en) * | 2017-09-01 | 2017-12-15 | 京东方科技集团股份有限公司 | Developing apparatus and its developing method |
| CN107479339B (en) * | 2017-09-01 | 2019-11-05 | 京东方科技集团股份有限公司 | Developing apparatus and its developing method |
| US10768530B2 (en) | 2017-09-01 | 2020-09-08 | Hefei Boe Display Technology Co., Ltd. | Developing apparatus and developing method thereof |
| CN111968935A (en) * | 2019-05-20 | 2020-11-20 | 东京毅力科创株式会社 | Substrate processing apparatus and substrate processing method |
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| CN101650530B (en) | 2012-05-09 |
| JP2010045125A (en) | 2010-02-25 |
| KR101410592B1 (en) | 2014-06-20 |
| KR20100019968A (en) | 2010-02-19 |
| JP4640469B2 (en) | 2011-03-02 |
| TWI401543B (en) | 2013-07-11 |
| TW201013334A (en) | 2010-04-01 |
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