CN101621115B - 电脉冲诱发电阻转变特性的二元氧化物rram存储单元 - Google Patents
电脉冲诱发电阻转变特性的二元氧化物rram存储单元 Download PDFInfo
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- CN101621115B CN101621115B CN2009100563015A CN200910056301A CN101621115B CN 101621115 B CN101621115 B CN 101621115B CN 2009100563015 A CN2009100563015 A CN 2009100563015A CN 200910056301 A CN200910056301 A CN 200910056301A CN 101621115 B CN101621115 B CN 101621115B
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- 238000003860 storage Methods 0.000 title claims abstract description 32
- 238000006243 chemical reaction Methods 0.000 title abstract description 7
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- 239000000758 substrate Substances 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract 7
- 230000008859 change Effects 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 16
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 10
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- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 2
- 239000008367 deionised water Substances 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- 230000005685 electric field effect Effects 0.000 claims description 2
- 230000004907 flux Effects 0.000 claims description 2
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 claims description 2
- 238000002604 ultrasonography Methods 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 230000005684 electric field Effects 0.000 abstract description 6
- -1 WOx Inorganic materials 0.000 abstract description 5
- 229910010282 TiON Inorganic materials 0.000 abstract description 2
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- 229910016411 CuxO Inorganic materials 0.000 abstract 1
- 229910003087 TiOx Inorganic materials 0.000 abstract 1
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 230000006698 induction Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000006479 redox reaction Methods 0.000 abstract 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical group CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 abstract 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 17
- 230000001960 triggered effect Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 239000010408 film Substances 0.000 description 11
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- 229910052751 metal Inorganic materials 0.000 description 4
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- 238000005516 engineering process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910000314 transition metal oxide Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- AMWRITDGCCNYAT-UHFFFAOYSA-L manganese oxide Inorganic materials [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
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CN2009100563015A CN101621115B (zh) | 2009-08-12 | 2009-08-12 | 电脉冲诱发电阻转变特性的二元氧化物rram存储单元 |
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CN2009100563015A CN101621115B (zh) | 2009-08-12 | 2009-08-12 | 电脉冲诱发电阻转变特性的二元氧化物rram存储单元 |
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CN101621115A CN101621115A (zh) | 2010-01-06 |
CN101621115B true CN101621115B (zh) | 2011-08-03 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013078791A1 (zh) * | 2011-12-01 | 2013-06-06 | 北京大学 | 存储器件、存储器阵列及其制造方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8901527B2 (en) * | 2010-07-02 | 2014-12-02 | Nanya Technology Corp. | Resistive random access memory structure with tri-layer resistive stack |
CN102169957A (zh) * | 2011-03-12 | 2011-08-31 | 中山大学 | 一种双极阻变存储器及其制备方法 |
CN102694121A (zh) * | 2012-05-17 | 2012-09-26 | 中国科学院物理研究所 | 一种制备电阻存储器件的方法及其产品与应用 |
CN103280526B (zh) * | 2013-05-29 | 2015-03-11 | 北京大学 | 一种忆阻层及忆阻器 |
CN104752609B (zh) * | 2013-12-26 | 2017-06-20 | 北京有色金属研究总院 | 一种阻变存储器及其制备方法 |
CN106206936B (zh) * | 2015-05-06 | 2019-03-08 | 华邦电子股份有限公司 | 电阻式随机存取存储器 |
CN106169534B (zh) * | 2016-07-25 | 2018-08-28 | 北京大学 | 一种适用于交叉阵列的自选择阻变存储器及其读取方法 |
CN112909167B (zh) * | 2021-03-10 | 2023-04-07 | 中国科学院微电子研究所 | 一种阻变存储器及其制备方法 |
CN113517397B (zh) | 2021-06-08 | 2022-08-16 | 华中科技大学 | 一种双极选通忆阻器的制备方法及双极选通忆阻器 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013078791A1 (zh) * | 2011-12-01 | 2013-06-06 | 北京大学 | 存储器件、存储器阵列及其制造方法 |
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Effective date of registration: 20170103 Address after: 215499 Changchun South Road, Jiangsu, No. 238, No. Patentee after: SUZHOU Research Institute SHANGHAI INSTITUTE OF CERAMICS CHINESE ACADEMY OF SCIENCES Address before: 200050 Dingxi Road, Shanghai, Changning District, No. 1295 Patentee before: SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES |
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Address after: 215400 No.6 Liangfu Road, Taicang City, Suzhou City, Jiangsu Province Patentee after: Jiangsu Institute of advanced inorganic materials Address before: No. 238 Changchun South Road, Taicang City, Jiangsu Province, 215499 Patentee before: SUZHOU Research Institute SHANGHAI INSTITUTE OF CERAMICS CHINESE ACADEMY OF SCIENCES |
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