CN101615624B - 发光显示面板及其制造方法 - Google Patents
发光显示面板及其制造方法 Download PDFInfo
- Publication number
- CN101615624B CN101615624B CN200810176352.7A CN200810176352A CN101615624B CN 101615624 B CN101615624 B CN 101615624B CN 200810176352 A CN200810176352 A CN 200810176352A CN 101615624 B CN101615624 B CN 101615624B
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- CN
- China
- Prior art keywords
- electrode
- auxiliary electrode
- display panel
- light emitting
- emitting display
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- 238000000034 method Methods 0.000 title claims abstract description 59
- 238000004020 luminiscence type Methods 0.000 title abstract 4
- 239000010410 layer Substances 0.000 claims abstract description 125
- 239000012044 organic layer Substances 0.000 claims abstract description 108
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 239000004020 conductor Substances 0.000 claims description 50
- 238000004519 manufacturing process Methods 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 18
- 239000000565 sealant Substances 0.000 claims description 16
- 238000010276 construction Methods 0.000 claims description 14
- 239000004411 aluminium Substances 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 239000012528 membrane Substances 0.000 claims description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 5
- 239000011777 magnesium Substances 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims 6
- 239000010409 thin film Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 58
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 239000007769 metal material Substances 0.000 description 19
- 238000004544 sputter deposition Methods 0.000 description 19
- 238000000151 deposition Methods 0.000 description 12
- 238000002161 passivation Methods 0.000 description 11
- 230000005540 biological transmission Effects 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- 230000027756 respiratory electron transport chain Effects 0.000 description 10
- 238000004062 sedimentation Methods 0.000 description 9
- 230000002411 adverse Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 230000005283 ground state Effects 0.000 description 8
- 239000011810 insulating material Substances 0.000 description 8
- 238000005215 recombination Methods 0.000 description 8
- 230000002708 enhancing effect Effects 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000004381 surface treatment Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 229920001621 AMOLED Polymers 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- -1 acryl Chemical group 0.000 description 1
- VVTQWTOTJWCYQT-UHFFFAOYSA-N alumane;neodymium Chemical compound [AlH3].[Nd] VVTQWTOTJWCYQT-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20080059890 | 2008-06-24 | ||
KR1020080059890 | 2008-06-24 | ||
KR10-2008-0059890 | 2008-06-24 | ||
KR10-2008-0079218 | 2008-08-13 | ||
KR1020080079218A KR101577219B1 (ko) | 2008-08-13 | 2008-08-13 | 발광 표시 패널 |
KR1020080079218 | 2008-08-13 | ||
KR10-2008-0095845 | 2008-09-30 | ||
KR1020080095845A KR101726620B1 (ko) | 2008-06-24 | 2008-09-30 | 발광 표시 패널 및 그의 제조 방법 |
KR1020080095845 | 2008-09-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101615624A CN101615624A (zh) | 2009-12-30 |
CN101615624B true CN101615624B (zh) | 2014-04-02 |
Family
ID=41495158
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200810176352.7A Active CN101615624B (zh) | 2008-06-24 | 2008-11-20 | 发光显示面板及其制造方法 |
Country Status (2)
Country | Link |
---|---|
KR (2) | KR101726620B1 (ko) |
CN (1) | CN101615624B (ko) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101035359B1 (ko) * | 2010-01-22 | 2011-05-20 | 삼성모바일디스플레이주식회사 | 유기 발광 소자 및 이의 제조방법 |
CN102916030A (zh) * | 2011-08-03 | 2013-02-06 | 尹根千 | 有机电致发光显示元件以及其制造方法 |
KR101421168B1 (ko) | 2011-09-20 | 2014-07-21 | 엘지디스플레이 주식회사 | 유기전계발광 표시소자 및 그 제조방법 |
KR101927334B1 (ko) * | 2012-09-10 | 2018-12-10 | 엘지디스플레이 주식회사 | 유기전계발광소자 및 그 제조방법 |
KR101990321B1 (ko) * | 2012-12-04 | 2019-06-18 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조방법 |
CN103311445B (zh) * | 2012-12-24 | 2016-03-16 | 上海天马微电子有限公司 | 有机发光二极管封装结构及其形成方法 |
KR102083983B1 (ko) * | 2013-05-29 | 2020-03-04 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법 |
KR102044137B1 (ko) * | 2013-06-28 | 2019-11-13 | 엘지디스플레이 주식회사 | 유기전계 발광소자 및 이의 제조 방법 |
CN104659072B (zh) | 2015-03-16 | 2017-07-28 | 京东方科技集团股份有限公司 | 阵列基板和阵列基板制作方法 |
CN104867958B (zh) | 2015-04-01 | 2017-12-08 | 京东方科技集团股份有限公司 | 有机电致发光显示基板及其制作方法和显示装置 |
CN104821329A (zh) * | 2015-05-04 | 2015-08-05 | 深圳市华星光电技术有限公司 | Oled显示装置 |
KR102326301B1 (ko) * | 2015-07-30 | 2021-11-15 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시장치 및 그 제조방법 |
KR102377468B1 (ko) * | 2015-10-19 | 2022-03-21 | 엘지디스플레이 주식회사 | 유기발광 표시장치 |
KR102380462B1 (ko) * | 2015-10-28 | 2022-03-31 | 엘지디스플레이 주식회사 | 플렉서블 디스플레이 패널, 플렉서블 디스플레이 디바이스 및 그 구동 방법 |
CN105679961A (zh) | 2016-01-26 | 2016-06-15 | 京东方科技集团股份有限公司 | 一种oled封装结构、显示设备及封装方法 |
US10607932B2 (en) | 2016-07-05 | 2020-03-31 | E Ink Holdings Inc. | Circuit structure |
TWI613942B (zh) * | 2016-07-05 | 2018-02-01 | 元太科技工業股份有限公司 | 電連接結構 |
US10103201B2 (en) | 2016-07-05 | 2018-10-16 | E Ink Holdings Inc. | Flexible display device |
KR102089340B1 (ko) * | 2016-08-31 | 2020-03-16 | 엘지디스플레이 주식회사 | 터치 센서를 가지는 유기 발광 표시 장치 및 그 제조 방법 |
KR102634180B1 (ko) * | 2018-09-18 | 2024-02-06 | 엘지디스플레이 주식회사 | 오버 코트층 상에 위치하는 발광 소자를 포함하는 디스플레이 장치 및 이의 제조 방법 |
CN111244317B (zh) * | 2018-11-27 | 2022-06-07 | 海思光电子有限公司 | 一种光发射器件、终端设备 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003092192A (ja) * | 2001-09-18 | 2003-03-28 | Matsushita Electric Ind Co Ltd | 有機エレクトロルミネッセンス表示装置およびその製造方法 |
JP3915734B2 (ja) * | 2003-05-12 | 2007-05-16 | ソニー株式会社 | 蒸着マスクおよびこれを用いた表示装置の製造方法、ならびに表示装置 |
JP4567962B2 (ja) * | 2003-07-25 | 2010-10-27 | 三洋電機株式会社 | エレクトロルミネッセンス素子及びエレクトロルミネッセンスパネル |
JP4016144B2 (ja) * | 2003-09-19 | 2007-12-05 | ソニー株式会社 | 有機発光素子およびその製造方法ならびに表示装置 |
JP4489472B2 (ja) * | 2004-03-19 | 2010-06-23 | 株式会社 日立ディスプレイズ | 有機エレクトロルミネッセンス表示装置 |
JP4367346B2 (ja) * | 2005-01-20 | 2009-11-18 | セイコーエプソン株式会社 | 電気光学装置及びその製造方法、並びに電子機器 |
KR100688791B1 (ko) * | 2006-01-27 | 2007-03-02 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시장치 및 그 제조 방법. |
-
2008
- 2008-09-30 KR KR1020080095845A patent/KR101726620B1/ko active IP Right Grant
- 2008-11-20 CN CN200810176352.7A patent/CN101615624B/zh active Active
-
2016
- 2016-06-20 KR KR1020160076787A patent/KR101747737B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
CN101615624A (zh) | 2009-12-30 |
KR20100002041A (ko) | 2010-01-06 |
KR101747737B1 (ko) | 2017-06-16 |
KR101726620B1 (ko) | 2017-04-14 |
KR20160075476A (ko) | 2016-06-29 |
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