CN101604728A - 相变化存储器装置及其制造方法 - Google Patents
相变化存储器装置及其制造方法 Download PDFInfo
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- CN101604728A CN101604728A CNA2008101254527A CN200810125452A CN101604728A CN 101604728 A CN101604728 A CN 101604728A CN A2008101254527 A CNA2008101254527 A CN A2008101254527A CN 200810125452 A CN200810125452 A CN 200810125452A CN 101604728 A CN101604728 A CN 101604728A
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- 239000012782 phase change material Substances 0.000 claims abstract description 55
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- 239000004065 semiconductor Substances 0.000 claims description 21
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 12
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- 229910045601 alloy Inorganic materials 0.000 claims description 7
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- 229910000765 intermetallic Inorganic materials 0.000 claims description 2
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- 239000010949 copper Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- -1 Co) Chemical compound 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 5
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- 229910017052 cobalt Inorganic materials 0.000 description 5
- 239000010941 cobalt Substances 0.000 description 5
- 238000010276 construction Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 4
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910001215 Te alloy Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
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- 239000011248 coating agent Substances 0.000 description 2
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- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 2
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- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BTGZYWWSOPEHMM-UHFFFAOYSA-N [O].[Cu].[Y].[Ba] Chemical compound [O].[Cu].[Y].[Ba] BTGZYWWSOPEHMM-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- YDVGDXLABZAVCP-UHFFFAOYSA-N azanylidynecobalt Chemical compound [N].[Co] YDVGDXLABZAVCP-UHFFFAOYSA-N 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001786 chalcogen compounds Chemical group 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 1
- 229940112669 cuprous oxide Drugs 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- OKZIUSOJQLYFSE-UHFFFAOYSA-N difluoroboron Chemical compound F[B]F OKZIUSOJQLYFSE-UHFFFAOYSA-N 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
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- 239000007769 metal material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- 238000004549 pulsed laser deposition Methods 0.000 description 1
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- 238000002207 thermal evaporation Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
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CNA2008101254527A CN101604728A (zh) | 2008-06-13 | 2008-06-13 | 相变化存储器装置及其制造方法 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102332530A (zh) * | 2010-07-13 | 2012-01-25 | 中国科学院上海微系统与信息技术研究所 | 具有侧壁加热电极与相变材料的存储器单元及制备方法 |
CN103151366A (zh) * | 2013-03-22 | 2013-06-12 | 厦门博佳琴电子科技有限公司 | 一种相变化储存器阵列及制造方法 |
CN103531710A (zh) * | 2013-10-22 | 2014-01-22 | 中国科学院上海微系统与信息技术研究所 | 一种高速低功耗相变存储器单元及其制备方法 |
CN103928609A (zh) * | 2013-01-14 | 2014-07-16 | 旺宏电子股份有限公司 | 三维相变化存储器装置及其制造方法 |
CN103972383A (zh) * | 2013-02-01 | 2014-08-06 | 厦门博佳琴电子科技有限公司 | 二极管选择元件阵列结构的相变化存储器及制造方法 |
CN104779349A (zh) * | 2015-04-15 | 2015-07-15 | 中国科学院上海微系统与信息技术研究所 | 一种相变存储单元及其制作方法 |
CN109755384A (zh) * | 2017-11-03 | 2019-05-14 | 中芯国际集成电路制造(上海)有限公司 | 相变存储器及其制备方法 |
-
2008
- 2008-06-13 CN CNA2008101254527A patent/CN101604728A/zh active Pending
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102332530A (zh) * | 2010-07-13 | 2012-01-25 | 中国科学院上海微系统与信息技术研究所 | 具有侧壁加热电极与相变材料的存储器单元及制备方法 |
CN102332530B (zh) * | 2010-07-13 | 2013-08-14 | 中国科学院上海微系统与信息技术研究所 | 具有侧壁加热电极与相变材料的存储器单元及制备方法 |
CN103928609A (zh) * | 2013-01-14 | 2014-07-16 | 旺宏电子股份有限公司 | 三维相变化存储器装置及其制造方法 |
CN103928609B (zh) * | 2013-01-14 | 2016-12-28 | 旺宏电子股份有限公司 | 三维相变化存储器装置及其制造方法 |
CN103972383A (zh) * | 2013-02-01 | 2014-08-06 | 厦门博佳琴电子科技有限公司 | 二极管选择元件阵列结构的相变化存储器及制造方法 |
CN103972383B (zh) * | 2013-02-01 | 2016-10-05 | 厦门博佳琴电子科技有限公司 | 二极管选择元件阵列结构的相变化存储器及制造方法 |
CN103151366A (zh) * | 2013-03-22 | 2013-06-12 | 厦门博佳琴电子科技有限公司 | 一种相变化储存器阵列及制造方法 |
CN103151366B (zh) * | 2013-03-22 | 2018-04-24 | 厦门博佳琴电子科技有限公司 | 一种相变化储存器阵列及制造方法 |
CN103531710A (zh) * | 2013-10-22 | 2014-01-22 | 中国科学院上海微系统与信息技术研究所 | 一种高速低功耗相变存储器单元及其制备方法 |
CN103531710B (zh) * | 2013-10-22 | 2016-03-16 | 中国科学院上海微系统与信息技术研究所 | 一种高速低功耗相变存储器单元及其制备方法 |
CN104779349A (zh) * | 2015-04-15 | 2015-07-15 | 中国科学院上海微系统与信息技术研究所 | 一种相变存储单元及其制作方法 |
CN109755384A (zh) * | 2017-11-03 | 2019-05-14 | 中芯国际集成电路制造(上海)有限公司 | 相变存储器及其制备方法 |
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Effective date of registration: 20100702 Address after: Hsinchu County of Taiwan Applicant after: Industrial Technology Research Institute Address before: Hsinchu County, Taiwan, China Applicant before: Industrial Technology Research Institute Co-applicant before: Powerchip Semiconductor Corp. Co-applicant before: Nanya Sci. & Tech. Co., Ltd. Co-applicant before: Maode Science and Technology Co., Ltd. Co-applicant before: Huabang Electronics Co., Ltd. |
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Open date: 20091216 |