CN101599496B - 薄膜晶体管基板与薄膜晶体管母基板 - Google Patents

薄膜晶体管基板与薄膜晶体管母基板 Download PDF

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CN101599496B
CN101599496B CN2008100676752A CN200810067675A CN101599496B CN 101599496 B CN101599496 B CN 101599496B CN 2008100676752 A CN2008100676752 A CN 2008100676752A CN 200810067675 A CN200810067675 A CN 200810067675A CN 101599496 B CN101599496 B CN 101599496B
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metal
bridge joint
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简传枝
黄上育
谢朝桦
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Innocom Technology Shenzhen Co Ltd
Innolux Shenzhen Co Ltd
Chi Mei Optoelectronics Corp
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Abstract

本发明涉及一种薄膜晶体管基板及一种薄膜晶体管母基板。该薄膜晶体管母基板包括一绝缘基底、多个薄膜晶体管阵列和多个线路区。该薄膜晶体管阵列和该线路区设置于该绝缘基底的同一表面。该线路区包括多条线路，该多个薄膜晶体管阵列通过线路区的多条线路电连接。每一线路包括至少两个金属部分，每一线路还进一步包括桥接保护部分。该至少两个金属部分通过该桥接保护部分电连接。该桥接保护部分的构成材料是一种抗腐蚀的导电材料。

Description

薄膜晶体管基板与薄膜晶体管母基板
技术领域
本发明涉及一种薄膜晶体管基板及一种薄膜晶体管母基板。
背景技术
目前，由于液晶显示装置具有轻、薄、小等特点，已被广泛应用于手机、笔记本电脑、个人数字助理(Personal Digital Assistant，PDA)及多种办公自动化与视听设备中。
薄膜晶体管基板是液晶显示装置的主要元件，在薄膜晶体管基板的制造过程中，为节约成本，通常先制作一尺寸较大的母基板，再对制作好的母基板依制品尺寸切割，以形成多片薄膜晶体管基板。
请参阅图1，是一种现有技术薄膜晶体管母基板的平面结构示意图。该薄膜晶体管母基板1包括一绝缘基底11、多个薄膜晶体管阵列12和多条线路13。该多个薄膜晶体管阵列12和该多条线路13设置在该绝缘基底11的表面。该薄膜晶体管阵列12通过该线路13电连接。该多个薄膜晶体管阵列12定义多片薄膜晶体管基板10。该薄膜晶体管母基板1沿切割线A-A切裂后则得到该多片薄膜晶体管基板10。
请参阅图2，是图1所示薄膜晶体管母基板1沿II-II线的剖面放大示意图。该线路13包括一金属层131及一保护层132。该金属层131的构成物质一般是铝等优良导电物质，其临近该绝缘基底11设置。该保护层132是由绝缘材料构成，其覆盖该金属层131并使该金属层131与外部空气隔绝，以保护该金属层131不被腐蚀。
然而，在薄膜晶体管母基板1被切割为多片薄膜晶体管基板10过程中，该线路13被切断，使得该线路13的金属层131切断处裸露在空气中。由于构成该金属层131的材料一般是铝等优良导电材料，这些材料同时也容易受到空气中的水汽等的腐蚀，该腐蚀将沿着金属层131一直向该薄膜晶体管阵列12延伸，进而破坏该薄膜晶体管阵列12，降低该薄膜晶体管母基板1切割出的薄膜晶体管基板10的可靠性。
发明内容
为解决现有技术薄膜晶体管母基板切割出的薄膜晶体管基板可靠性较差的问题，有必要提供一种可切割出可靠性较好的薄膜晶体管基板的薄膜晶体管母基板。
同时，也有必要提供一种可靠性较好的薄膜晶体管基板。
一种薄膜晶体管母基板，其包括一绝缘基底、多个薄膜晶体管阵列和多个线路区。该薄膜晶体管阵列和该线路区设置于该绝缘基底的同一表面。每一线路区包括多条线路，该多个薄膜晶体管阵列通过线路区的多条线路电连接。每一线路包括至少两个金属部分，每一线路还进一步包括桥接保护部分。该至少两个金属部分通过该桥接保护部分电连接。该桥接保护部分的构成材料是一种抗腐蚀的导电材料。
一种薄膜晶体管基板，其包括一绝缘基底、一薄膜晶体管阵列、一第一金属部分和一第二金属部分。该薄膜晶体管阵列设置于该绝缘基底的同一表面。该第一金属部分电连接该薄膜晶体管阵列。该第二金属部分用于电连接一外部电路。该薄膜晶体管基板进一步包括一桥接保护部分，该第二金属部分与该第一金属部分通过该桥接保护部分电连接。该桥接保护部分的构成材料是一种抗腐蚀导电材料。
一种薄膜晶体管基板，其包括一绝缘基底、一薄膜晶体管阵列、一第一金属部分和一第二金属部分。该薄膜晶体管阵列设置于该绝缘基底的同一表面。该第一金属部分电连接该薄膜晶体管阵列。该第二金属部分用于电连接一外部电路。该薄膜晶体管基板进一步包括一桥接保护部分，该第二金属部分与该第一金属部分通过该桥接保护部分电连接。桥接保护部分可以防止金属部分的腐蚀通过该桥接保护部分。
与现有技术相比较，本发明的薄膜晶体管母基板包括具有桥接保护部分的线路，当薄膜晶体管母基板被切割成多片薄膜晶体管基板时，该桥接保护部分阻止该线路被切开处开始的腐蚀延伸到薄膜晶体管基板内部，因而提高了该薄膜晶体管母基板切割出的薄膜晶体管基板的可靠性。该薄膜晶体管基板也能提高其可靠性。
附图说明
图1是一种现有技术薄膜晶体管母基板的平面结构示意图。
图2是图1所示薄膜晶体管母基板沿II-II线的剖面放大示意图。
图3是本发明薄膜晶体管母基板第一实施方式的平面结构示意图。
图4是图3所示薄膜晶体管母基板沿IV-IV线的剖面放大示意图。
图5是本发明薄膜晶体管母基板第二实施方式的剖面放大示意图。
具体实施方式
请参阅图3，是本发明薄膜晶体管母基板第一实施方式的平面结构示意图。该薄膜晶体管母基板2包括一绝缘基底21、多个薄膜晶体管阵列22和多个线路区23。该薄膜晶体管阵列22和该线路区23设置在该绝缘基底21的一表面。该薄膜晶体管阵列22通过该线路区23电连接。
该绝缘基底21由一种透明绝缘材料构成，优选地该绝缘基底21是一透明玻璃板。
该多个薄膜晶体管阵列22定义多片薄膜晶体管基板20。该薄膜晶体管阵列22包括多条数据线(图未示)、多条扫描线(图未示)、多个薄膜晶体管(图未示)和各个像素电极(图未示)。该多条数据线平行间隔设置。该多条扫描线与该多条数据线垂直绝缘相交。该多条数据线和该多条扫描线共同定义多个像素单元。每一像素单元包括一薄膜晶体管和一像素电极。该像素电极的材料是氧化铟锌(IZO)或氧化铟钛(ITO)。
请参阅图4，是图3所示薄膜晶体管母基板2沿IV-IV线的剖面放大示意图。该线路区23包括一保护层233和多条线路238。该多条线路238用于电连接该线路区23所临近的薄膜晶体管阵列22，其设置在该绝缘基底21的表面。该保护层233是一种绝缘材料，其覆盖该多条线路238从而使该多条线路238与外界空气隔绝，以防止该多条线路238被腐蚀。
每一条线路238包括一金属部分231、一桥接保护部分232和两沟槽234。该金属部分231是一金属层，其直接设置在该绝缘基底21的表面。该两个沟槽234将该金属部分231分割为相互绝缘的连接该薄膜晶体管阵列22的两第一金属部分235和该两第一金属部分235之间的一第二金属部分236。该桥接保护部分232设置在该两沟槽234正上方向并部分覆盖该第一金属部分235与该第二金属部分236以电连接该第一金属部分235和该第二金属部分236。
该金属部分231与该薄膜晶体管矩阵22的扫描线或数据线的构成相同，一般是150到300nm的铝金属层和50到200nm钼金属层组成的金属叠层。该金属部分231与该扫描线或该数据线在同一掩膜工艺中形成。该桥接保护部分232使用抗腐蚀的导电材料形成，优选地抗腐蚀的导电材料是与构成该薄膜晶体管阵列22的像素电极相同，都是ITO或IZO。该桥接保护部分232与该像素电极在同一掩膜工艺中形成。
请再次参阅图3和图4。B-B线是该薄膜晶体管母基板1的切割线。该切割线B-B横穿该多个线路区23的线路238的第二金属部分236，即该切割线B-B穿过每一线路23的线路238的两沟槽234之间。该薄膜晶体管母基板2将沿着该B-B线被切割为多片薄膜晶体管基板20。该薄膜晶体管母基板2被切成多片薄膜晶体管基板20后，每一薄膜晶体管基板20中被暴露在空气中的第二金属部分236与该第一金属部分235通过该桥接保护部分232电连接。该第一金属部分236再连接到该薄膜晶体管基板20的薄膜晶体管阵列22。
与现有技术相比较，本发明的薄膜晶体管母基板2被切割成多片薄膜晶体管基板20时，该薄膜晶体管母基板2的两薄膜晶体管阵列22之间的线路区23的线路238从该两个沟槽234之间的第二金属部分236处被切断。当被切成的薄膜晶体管基板20被放置于空气中时，即使该第二金属部分236被空气中的水汽腐蚀。然而当该腐蚀向该薄膜晶体管阵列22延伸到该沟槽234时，由于该金属部分231已经被该沟槽234断开，而该桥接保护部分232是由抗腐蚀导电材料构成。因此该腐蚀延伸到该沟槽234后将停止，从避免该薄膜晶体管阵列22受到腐蚀损害。提高了该薄膜晶体管母基板2切割出的薄膜晶体管基板20的可靠性。同时，该桥接保护部分232与该像素电极在同一掩膜工艺下形成，并没有增加该薄膜晶体管母基板2的制造工序。
请参阅图5，是本发明薄膜晶体管母基板第二实施方式的剖面放大示意图。该第二实施方式的薄膜晶体管母基板3与该薄膜晶体管母基板2基本相同，其区别在于：该第二金属部分336与该第一金属部分335不属于同一金属层。该两第一金属部分335直接设置在该绝缘基底31的表面。该桥接保护部分332部分覆盖该第一金属部分335。该第二金属部分336设置在该桥接保护部分332背离该第一金属部分335的一侧。该两第一金属部分335通过该两该桥接保护部分332和第二金属部分336电连接。
与该薄膜晶体管母基板2相比较，该薄膜晶体管母基板3的第二金属部分336与该第一金属部分335分别设置在该桥接保护部分332的两侧，而被该桥接保护部分332隔离。该第二金属部分336被腐蚀后，由于该桥接保护部分332隔离该两层。所以该第一金属部分335更不容易被腐蚀。所以该薄膜晶体管基板30的可靠性更高。
然而，本发明并不限于上述实施方式所述，如该金属部分231还可以是是一铝质金属部分；该金属部分231还可以是一钼质金属层或是铜等其他高导电率金属材料构成的金属层。该桥接保护部分332还可以使用高熔点金属作为抗腐蚀材料，该高熔点金属可以是Cr、Ti、Nb、V、W、Ta、Zr或Hf族中任一金属。另外，在实施方式1中，该沟槽234中还进一步填充有绝缘材料；该线路238还可以不包括沟槽234，该桥接保护部分232直接填充于该金属部分231的第一金属部分235与第二金属部分236之间。

Claims (10)

1.一种薄膜晶体管母基板，其包括一绝缘基底、多个薄膜晶体管阵列和多个线路区，该薄膜晶体管阵列和该线路区设置于该绝缘基底的同一表面，每一线路区包括多条线路，该多个薄膜晶体管阵列通过线路区的多条线路电连接，其特征在于：每一线路包括至少两个金属部分和桥接保护部分，该至少两个金属部分通过该桥接保护部分电连接，该桥接保护部分的构成材料是一种抗腐蚀的导电材料。
2.如权利要求1所述的薄膜晶体管母基板，其特征在于：该至少两个金属部分包括两个第一金属部分和一个第二金属部分，该两个第一金属部分分别电连接该薄膜晶体管阵列，该第一金属部分与该第二金属部分通过该桥接保护部分电连接。
3.如权利要求2所述的薄膜晶体管母基板，其特征在于：每一第一金属部分与第二金属部分之间有一沟槽，该桥接保护部分覆盖该沟槽，并填充该沟槽。
4.如权利要求1、2或3中任意一项所述的薄膜晶体管母基板，其特征在于：该抗腐蚀的导电材料是氧化铟锌或氧化铟钛。
5.如权利要求4所述的薄膜晶体管母基板，其特征在于：该薄膜晶体管阵列包括多个像素电极，构成该像素电极的材料与该桥接保护部分相同，该像素电极与该桥接保护部分在同一掩膜工艺中形成。
6.一种薄膜晶体管基板，其包括一绝缘基底、一薄膜晶体管阵列和多条线路，该薄膜晶体管阵列和该多条线路设置于该绝缘基底的同一表面，其特征在于：每一条线路包括一第一金属部分、一第二金属部分和一桥接保护部分，该第一金属部分电连接该薄膜晶体管阵列，该第二金属部分用于电连接一外部电路，该第二金属部分与该第一金属部分通过该桥接保护部分电连接，该桥接保护部分的构成材料是一种抗腐蚀导电材料。
7.如权利要求6所述的薄膜晶体管基板，其特征在于：该第一金属部分与该第二金属部分之间有一沟槽，该桥接保护部分覆盖并填充该沟槽。
8.如权利要求6或7所述的薄膜晶体管基板，其特征在于：该抗腐蚀导电材料是氧化铟锌或氧化铟钛。
9.如权利要求8所述的薄膜晶体管基板，其特征在于：该薄膜晶体管阵列包括多个像素电极，构成该像素电极的材料与该桥接保护部分相同，该像素电极与该桥接保护部分在同一掩膜工艺中形成。
10.一种薄膜晶体管基板，其包括一绝缘基底、一薄膜晶体管阵列和多条线路，该薄膜晶体管阵列和该多条线路设置于该绝缘基底的同一表面，其特征在于：每一条线路包括一第一金属部分、一第二金属部分和一桥接保护部分，该第一金属部分电连接该薄膜晶体管阵列，该第二金属部分用于电连接一外部电路，该第二金属部分与该第一金属部分通过该桥接保护部分电连接，该桥接保护部分可以防止金属部分的腐蚀通过该桥接保护部分。
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