CN101587907B - Production method of low junction capacitance overvoltage protection thyristor apparatus chip - Google Patents
Production method of low junction capacitance overvoltage protection thyristor apparatus chip Download PDFInfo
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- CN101587907B CN101587907B CN2009103019456A CN200910301945A CN101587907B CN 101587907 B CN101587907 B CN 101587907B CN 2009103019456 A CN2009103019456 A CN 2009103019456A CN 200910301945 A CN200910301945 A CN 200910301945A CN 101587907 B CN101587907 B CN 101587907B
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Abstract
The invention discloses a method for producing low junction capacitance overvoltage protection thyristor apparatus chip. The method comprises the following steps: polishing and oxidizing a silicon, diffusing a P type short base region, photoetching a window of an N<+> emitting region, diffusing the N<+> emitting region, photoetching a groove, eroding the groove, passivation of the glass, photoetching a lead hole, steaming and plating electrodes with double sides, testing the alloy and the chip and sawing sheets. The invention is characterized in that after the silicon oxidation step, before the P type short base region diffusion step, firstly the N type ion injection region is double-sided photoetched, the double-sided N type ion is injected by using the masking effect of an oxidation film, the injection dosage of the N type ion injection region is 5E12-2.0E14 ions/cm<2>, the width of the N type ion injection region is 30-150mum; before the N type ion injection, oxidation and diffusion, a local N type doped region is formed; after the diffusion of the P type short base region, finally an N type region burying layer under the P type short base region is formed, and the doped concentration of the N type region burying layer is 1.0E15-6.0E15cm<-3>. The method is simple in process, convenient to process and improves performance of product and consistency and controllability of product voltage.
Description
Technical field
The present invention relates to a kind of production method of low junction capacitance overvoltage protection thyristor apparatus chip.
Background technology
The overvoltage protection thyristor device is the device that prevents lightning surge in a kind of communication system; the junction capacitance that feature is a device that it is important; electric capacity is more little; loss is just more little; influence to communication quality is just more little; the frequency of using along with communication equipment is more and more higher, and the electric capacity of device has influence on communication quality all the more, so it is extremely important to reduce the capacitance of device.And the junction capacitance of general overvoltage protection thyristor device is all bigger, and is subjected to the influence of the overvoltage protection ability of overvoltage protection thyristor device, the i.e. anti-instantaneous surge capacity of device.The surge capacity value is high more, and the required chip area of device is big more, and capacitance is just big more, has so just seriously limited the application of overvoltage protection thyristor device at the high frequency communication field.And when manufacturing the overvoltage protection thyristor device both at home and abroad, because the magnitude of voltage claimed range is narrow, so in manufacturing process, the resistivity of material is required very strict, electrical resistivity range value and resistivity must be very little, to satisfy voltage equation V
b=C ρ
α(C is a constant, and α generally gets 0.75), but the doping content of monocrystal material is difficult to the very even of control at present, this makes that also the difficulty of explained hereafter control is very big, and the voltage consistency is poor, and because resistivity is low, capacitance is subjected to the restriction of resistivity of material, is difficult for reducing, all than higher.
Summary of the invention
The production method that the purpose of this invention is to provide a kind of low junction capacitance overvoltage protection thyristor apparatus chip.
The technical solution used in the present invention is:
A kind of production method of low junction capacitance overvoltage protection thyristor apparatus chip, this method may further comprise the steps: silicon wafer polishing, oxidation, the short base diffusion of P type, photoetching N
+Emitter window, N
+Emitter region diffusion, chemical wet etching groove, trench etching, glassivation, lithography fair lead, two-sided electrode evaporation, alloy, chip testing and saw blade, behind silicon chip, before the short base of the P type diffusing step, do dual surface lithography N type ion implanted region earlier, utilize the masking action of oxide-film, adopt two-sided N type ion to inject, the implantation dosage of N type ion implanted region is 5E12～2.0E14 ions/cm
2, the width of N type ion implanted region is 30～150um; After N type ion injects oxidation and diffusion, form the N type doped region of a part; After the short base diffusion of P type, finally formed a N type zone buried regions under the short base of P type, the doping content of this N type zone buried regions is 1.0E15～6.0E15cm
-3
Advantage of the present invention is: this method technology is simple, easy to process, and has improved the silicon single crystal material scope of application, has improved the consistency and the controllability of product voltage, has reduced the capacitance of product.
Description of drawings
Fig. 1 is a vertical structure schematic diagram of the present invention.
Fig. 2 is a transversary schematic diagram of the present invention.
Fig. 3 is line code figure of the present invention.
Fig. 4 is a voltage-current characteristic of the present invention.
Fig. 5 is the vertical structure schematic diagram of prior art.
Among the figure: 1, outer channel, 2, metal electrode T1 and T2,3, the N+ emitter region, 4, the short base of P type, 5, N
-The type growing base area, 6, N type zone buried regions district, 7, N type ion implanted region.
Embodiment
Shown in Fig. 1 to 4, a kind of low junction capacitance overvoltage protection thyristor apparatus chip of the present invention comprises metal electrode T1 and T2 2, N
+Emitter region 3, N
-Type growing base area 5, the short base 4 of P type, etching has outer channel 1 around the described chip, described chip internal is set up one section N type ion implanted region 7, and N type ion implanted region 7 forms a N type zone buried regions 6 for 4 times in the short base of P type, and the width of N type ion implanted region 7 is 30～150um.Its production method may further comprise the steps: silicon wafer polishing, oxidation, the short base diffusion of P type, photoetching N
+Emitter window, N
+Emitter region diffusion, chemical wet etching groove, trench etching, glassivation, lithography fair lead, two-sided electrode evaporation, alloy, chip testing and saw blade, behind silicon chip, before the short base of P type 4 diffusing steps, do dual surface lithography N type ion implanted region 7 earlier, utilize the masking action of oxide-film, adopt two-sided N type ion to inject, the implantation dosage of N type ion implanted region 7 is 5E12～2.0E14 ions/cm
2After N type ion injects oxidation and diffusion, form the N type doped region of a part; After short base 4 diffusions of P type, finally formed a N type zone buried regions 6 under the short base 4 of P type, the doping content of this N type zone buried regions 6 is 1.0E15～6.0E15cm
-3By the concentration of adjustment N type zone buried regions 6, thus the avalanche breakdown voltage value of modulation device, and other regional N
-The variation of type growing base area 5 doping contents does not influence the change in voltage of device.
The concrete production method of a kind of low junction capacitance overvoltage protection thyristor apparatus chip of the present invention is as follows:
1. silicon single crystal flake requires: ρ=30-40-50-60 Ω ㎝, silicon single crystal flake thickness 245 ± 10um.
2. silicon single crystal flake chemical corrosion:
A. prepare corrosive liquid earlier: by weight HF: glacial acetic acid: HNO
3=1:2:(1.5～2.5) (wherein HF is that concentration is 48% solution, and glacial acetic acid is pure, HNO
3Be that concentration is 68% solution), the preparation corrosive liquid;
B. silicon single crystal flake that will be to be corroded inserts in the horse of 25 grooves;
C. the temperature with corrosive liquid is controlled at 6-9 ℃;
The horse that d. will be inserted with silicon single crystal flake is inserted in the corrosion page or leaf and is corroded, and continuous upper and lower carrying, and etching time is controlled at thickness difference, the etching time difference that 6-10min(requires);
E. the silicon wafer thickness t=200 ± 10um after corroding;
F. after etching, take out horse, use deionized water rinsing 15 times.
3. oxidation:
A. the silicon single crystal flake that will treat oxidation dries with drier;
B. the silicon single crystal flake after will drying is inserted on the diffusion boat, the diffusion boat that is inserted with silicon single crystal flake is sent in the flat-temperature zone of diffusion furnace, feeds the pure dried oxygen of 5 L/min in the diffusion pipeline;
C. open diffusion furnace and heat up, with being raised to T=1120 ± 20 ℃ in 4 hours;
D. when temperature reach T=1120 ± 20 ℃ and constant after, change dried oxygen into wet oxygen, and pick up counting, the time of logical wet oxygen is t=4.5 ± 1h; Wet oxygen is replaced with dried oxygen then, the time is t=1.5h again;
E. begin cooling after then, temperature ℃ is reduced to below 500 ℃ by T=1120 ± 20, pull out the diffusion boat of silicon single crystal flake, silicon single crystal flake is taken out be inserted on the horse, test with 6-8h;
F. check oxidated layer thickness: require oxidated layer thickness=1.0-1.2um.
4. dual surface lithography N type ion implanted region window:
A. even glue (with Suzhou HFJ220 glue (ultraviolet negative photoresist), rotating speed 6000rpm, even glue time 35sec);
B. baking before (will spare silicon chip behind the glue put into 100 ± 5 ℃ baking oven toast 25-30min); C. exposure (sheltering ultraviolet exposure, time for exposure 6-9 second with N type ion implanted region version);
D. develop (silicon chip after will exposing immerses in the HFJ2200 type developer solution (aqueous photoresist developing liquid), soaks 6-8min, takes out the back and dries);
E. post bake (silicon chip after will developing is put into 140 ± 5 ℃ baking oven and toasted 30-40min);
F. corrosion (is immersed 42% hydrofluoric acid with the silicon chip behind the post bake: the SiO of 96% ammonium fluoride: deionized water=1mL:2g:3.3mL
2In the corrosive liquid, temperature is 37 ± 2 ℃, and etching time 6-8min takes out the back and dashes 10 times with deionized water);
G. remove photoresist (silicon chip after will corroding is put into the 95-98% concentrated sulfuric acid: the liquid that removes photoresist of 35 ± 2% hydrogen peroxide=1:4, soak 6-8min, and silicon chip is taken out, use deionized water rinsing 12 times).
5. ion injects N type impurity:
Use ion implantor, two-sided injection N type foreign matter of phosphor, high pressure 30KV, implantation dosage are 5.0E12～2.0E14 ions/cm
2(selecting different implantation dosages) according to the device voltage value.
6. oxide-diffused:
A. the silicon chip that will do after ion injects is inserted on the diffusion boat, the diffusion boat that is inserted with silicon single crystal flake is sent in the flat-temperature zone of diffusion furnace, feeds the pure oxygen of 5 L/min in the diffusion pipeline;
B. open diffusion furnace and heat up, with being raised to T=1260 ± 15 ℃ in 4 hours;
C. when temperature reach T=1260 ± 15 ℃ and constant after, pick up counting, be t=20～100h diffusion time;
D. begin cooling after then, temperature ℃ is reduced to below 500 ℃ by T=1260 ± 15, pull out the diffusion boat of silicon single crystal flake, silicon single crystal flake is taken out be inserted on the horse, test with 6-8h;
F. Xj is spread in check: require Xj=45 ± 15um.
7. P type short base diffusion:
A. silicon chip coating B30 diffuse source (aqueous boron diffusion source) that will be to be spread, be inserted on the diffusion boat then, the diffusion boat that is inserted with silicon single crystal flake is sent in the flat-temperature zone of diffusion furnace, in the diffusion pipeline, fed the pure nitrogen of 6 L/min and the pure oxygen of 0.18 L/min;
B. open diffusion furnace and heat up, with being raised to T=1020 ± 15 ℃ in 4 hours;
C. when temperature reach T=1020 ± 15 ℃ and constant after, pick up counting, be t=1.2 ± 0.2h diffusion time;
D. begin cooling after then, temperature ℃ is reduced to below 500 ℃ by T=1020 ± 15, pull out the diffusion boat of silicon single crystal flake, silicon single crystal flake is taken out be inserted on the horse, test with 4-6h;
E. R is spread in check
: require R
=30 ± 2 Ω/;
F. the silicon chip after the prediffusion is inserted on the diffusion boat, the diffusion boat that is inserted with silicon single crystal flake is sent in the flat-temperature zone of diffusion furnace, in the diffusion pipeline, feed the pure oxygen of 5 L/min;
G. open diffusion furnace and heat up, with being raised to T=1260 ± 15 ℃ in 4 hours;
H. when temperature reach T=1260 ± 15 ℃ and constant after, pick up counting, be t=18 ± 4h diffusion time;
I. begin cooling after then, temperature ℃ is reduced to below 500 ℃ by T=1260 ± 15, pull out the diffusion boat of silicon single crystal flake, silicon single crystal flake is taken out be inserted on the horse, test with 6-8h;
J. R is spread in check
, Xj: require R
=60 ± 5 Ω/, Xj=25 ± 5um.
8. photoetching N+ emitter window:
A. even glue (with Suzhou HFJ220 glue, rotating speed 6000rpm, even glue time 35sec);
B. baking before (will spare silicon chip behind the glue put into 100 ± 5 ℃ baking oven toast 25-30min);
C. exposure (sheltering ultraviolet exposure, time for exposure 6-9 second with N+ emitter region version);
D. develop (silicon chip after will exposing immerses in the HFJ2200 type developer solution, soaks 6-8min, takes out the back and dries);
E. post bake (silicon chip after will developing is put into 140 ± 5 ℃ baking oven and toasted 30-40min);
F. corrosion (is immersed 42% hydrofluoric acid with the silicon chip behind the post bake: the SiO of 96% ammonium fluoride: deionized water=1mL:2g:3.3mL
2In the corrosive liquid, temperature is 37 ± 2 ℃, and etching time 6-8min takes out the back and dashes 10 times with deionized water);
G. remove photoresist (silicon chip after will corroding is put into the 95-98% concentrated sulfuric acid: the liquid that removes photoresist of 35 ± 2% hydrogen peroxide=1:4, soak 6-8min, and silicon chip is taken out, use deionized water rinsing 12 times).
9. N+ emitter region diffusion:
A. silicon chip that will be to be spread is inserted on the diffusion boat, the diffusion boat that is inserted with silicon single crystal flake is sent in the flat-temperature zone of diffusion furnace, feeds the pure nitrogen of 5 L/min and the pure oxygen of 2 L/min in the diffusion pipeline;
B. open diffusion furnace and heat up, with being raised to T=1050 ± 15 ℃ in 4 hours;
C. when temperature reach T=1050 ± 15 ℃ and constant after, feed the source of the taking nitrogen of 1.8 L/min again, the source is high-purity phosphorus oxychloride, picks up counting, be t=1.2 ± 0.2h diffusion time, closes after then and take source nitrogen, continues constant temperature 0.3 h;
D. begin cooling after then, temperature ℃ is reduced to below 500 ℃ by T=1050 ± 15, pull out the diffusion boat of silicon single crystal flake, silicon single crystal flake is taken out be inserted on the horse, test with 3-4h;
E. R is spread in check
: require R
=1.8 ± 0.2 Ω/;
F. will treat that the silicon chip that distributes again is inserted on the diffusion boat, the diffusion boat that is inserted with silicon single crystal flake be sent in the flat-temperature zone of diffusion furnace, in the diffusion pipeline, feed the pure oxygen of 5 L/min;
G. open diffusion furnace and heat up, with being raised to T=1100 ± 15 ℃ in 4 hours;
H. when temperature reach T=1100 ± 15 ℃ and constant after, pick up counting, be t=4 ± 1h diffusion time;
I. begin cooling after then, temperature ℃ is reduced to below 500 ℃ by T=1100 ± 15, pull out the diffusion boat of silicon single crystal flake, silicon single crystal flake is taken out be inserted on the horse, test with 6-8h;
J. Xj is spread in check: require Xj=12 ± 2um.
10. photoetching trench openings:
A. even glue (with BN308 glue (ultraviolet negative photoresist), rotating speed 3000rpm, even glue time 40sec);
B. baking before (will spare silicon chip behind the glue put into 100 ± 5 ℃ baking oven toast 25-30min);
C. exposure (sheltering ultraviolet exposure, time for exposure 6-9 second with the groove version);
D. develop (silicon chip after will exposing immerses in the HFJ2200 type developer solution, soaks 6-8min, takes out the back and dries);
E. post bake (silicon chip after will developing is put into 140 ± 5 ℃ baking oven and toasted 30-40min);
F. the SiO at corrosion window place
2(silicon chip behind the post bake is immersed 42% hydrofluoric acid: the SiO of 96% ammonium fluoride: deionized water=1mL:2g:3.3mL
2In the corrosive liquid, temperature is 37 ± 2 ℃, and etching time 6-8min takes out the back and dashes 10 times with deionized water);
G. post bake (silicon chip after will developing is put into 140 ± 5 ℃ baking oven and toasted 30-40min).
11. trench etching:
Wet etching corrodes two-sided groove simultaneously, and corrosive liquid is that weight ratio is HF: glacial acetic acid: HNO
3=1:1:(1.5～2.5) (wherein HF is that concentration is 48% solution to mixed liquor, and glacial acetic acid is pure, HNO
3Be that concentration is 68% solution), the temperature with corrosive liquid during corrosion is controlled at 9～12 ℃, and etching time is controlled at 5～8min, and the gash depth after the corrosion is 50-70um.
12. glassivation film deposition:
Preparation INK: ethyl cellulose: the butyl card is finished the g of alcohol=(2.5-3.2): 100 ml; Continue to stir; Until abundant dissolving; The glass paste modulation: INK:GP230 glass dust=1:(2-3); Stirring is until fully evenly, blade coating glass paste: glass paste is scraped in the groove of silicon chip with the plastics scraper; Groove is filled and led up in requirement, dries by the fire 60-70Sec on 120 ± 10 ℃ hot plate; Burn temperature 470-490 ℃, time 15-35min(N
2: 2-3 L/min, O
2: 2-3 L/min protection); Wipe with the glass dust that the wiping dish is outer with groove; 860 ± 10 ℃ of firing temperatures, time 5-15min (N
2: 2-3 L/min, O
2: 2-3 L/min protection).
13. lithography fair lead:
A. even glue (using BN308 glue, rotating speed 3000rpm, even glue time 40sec);
B. baking before (will spare silicon chip behind the glue put into 100 ± 5 ℃ baking oven toast 25-30min); C. exposure (sheltering ultraviolet exposure, time for exposure 6-9 second with the fairlead version);
D. develop (silicon chip after will exposing immerses in the HFJ2200 type developer solution, soaks 6-8min, takes out the back and dries);
E. post bake (silicon chip after will developing is put into 140 ± 5 ℃ baking oven and toasted 30-40min);
F. the SiO at corrosion window place
2(silicon chip behind the post bake is immersed 42% hydrofluoric acid: the SiO of 96% ammonium fluoride: deionized water=1mL:2g:3.3mL
2In the corrosive liquid, temperature is 37 ± 2 ℃, and etching time 6-8min takes out the back and dashes 10 times with deionized water);
G. remove photoresist (silicon chip after will corroding is put into the 95-98% concentrated sulfuric acid: the liquid that removes photoresist of 35 ± 2% hydrogen peroxide=1:4, soak 6-8min, and silicon chip is taken out, use deionized water rinsing 12 times).
14. evaporation double-face electrode:
A process according to claim 1, wherein the automotive interior carpets automatic molding machine, characterized in that the layering means (8) comprises a lapping machine frame (81), cotton provided means (82), cotton made after means (83), fed cotton means (84), the former cotton feeding device (85), the latter Feeding device (86), lapping the car (87) and put cotton power plant (88), lapper rack (81 ) with said base (11) is fixed, and with the layering of the station (23c) corresponding to the lapping machine frame (81) on either side of the top arm has a (811), one pair of arm (811) correspond to each other, put cotton power unit (88) includes a sixth motor (881), fifth gear wheel (882) and fourth belt (883), sixth motor (881) is located in the third Motor Mount (8811), and the third motor base (8811) fixed on the lapper rack (81) at the top, and the pair of arm (811), between the fifth gear wheel (882) fixed in the sixth Motor (881) of the motor shaft, the fourth drive belt (883) located at one end of the fifth set of the driving wheel (882), and the other end of the cotton feed means (84) connected to a drive; premise Cotton means (82) comprises a prerequisite cotton curtain roller (821), under the premise of cotton curtain roller (822), provided cotton curtain (823), a first gear (824) and a tension roller blinds cotton premise (825), provided cotton curtain roller (821) pivot settings In the pair of arm (811) of the upper, and lower rollers provided cotton curtains (822) disposed between the pair pivot arm (811) of the lower part, provided cotton curtain (823) located on the premises set cotton curtain roller (821) and under the premise of cotton curtain roller (822), and the premise of cotton curtain rolls around (821) and under the premise of cotton curtain roller (822) to form a line shift cycle to shift plane trip, the first gear (824) fixed to the premises cotton curtain roller (821) at one end of the roller shaft, and the rear lift cotton means (83) with the drive, a tension roller provided cotton curtain (825) disposed on the pivot arm (811), and the in premise cotton curtain roller (821) and under the premise of cotton curtain roller (822) between; After mentioning Cotton device (83) includes a rear lift cotton curtain roller (831), after mentioning cotton curtain lower roller (832), after mentioning cotton curtain (833), a second gear (834), the sixth gear wheel (837), a first tension roller (835) and a plurality of second tension roller (836), and then withdrawing cotton curtain roller (831) pivot settings a pair of arm (811) of the upper, lower and then raise cotton curtain roller (832) is set between a pair of pivot arm (811) of the lower part, made after cotton curtain (833) located at one end of the sleeve cotton curtain made after the upper roller (831), the other end of the sleeve disposed in the lower roller made after cotton curtain (832), and then withdrawing cotton curtain around the upper roller (831) and then withdrawing the cotton curtain roller (832) to form a cycle of line shift plane , and the rear curtain mention cotton (833) provided with said cotton curtain (823) cooperate to feed the fleece cotton extract means (84), a second gear (834) fixed to the rear curtain mention cotton rolls (831 ) and one end of the roller shaft and said first gear (824) to engage the sixth gear wheel (837) fixed to the rear lift cotton curtain roller (831) the other end of the roller shaft, and with said feed Cotton means (84) drivingly connected to the first tension roller (835) setting said pivot arm (811) of the lower part, and provided in the rear curtain cotton (833), of a plurality of second tension roller (836) to each other intervals set between a pair of pivot arm (811) in the middle, and the rear curtain mention cotton (833) contacts the outer wall; said cotton feed means (84) comprises first and second feed rollers cotton curtain (841 , 842), fed cotton curtain (843), the fifth drive belt (844), a pair of arm (845), a pair of rocker arm (846), the first transmission wheel (847), the sixth drive belt (848) and the second gear set (849), a first feed roller cotton curtain (841) side of the pair of pivot arm set (846) in which a rocker arm (846) of the upper side of the other end of the pivot disposed on the other arm (846) on one side of the upper end of said second transmission wheel (849) fixed to the first feed roller cotton curtain (841) at one end of the roller shaft, and the first feed roller curtain cotton (841) The other end of the roller shaft is fixed to a third gear (8411), the third gear (8411) and the cotton after the feeding means (86) with the drive, cotton curtain second feed roller (842) at one end disposed on said pair of pivot arm (811) in one of the arm (811) and the other end pivotally disposed on the other arm (811), and feed cotton curtains (843) provided in the first set , cotton curtain second feed rollers (841, 842), and the surrounding first and second feed cotton curtain roller (841, 842) to form a movement plane of movement cycle, the first transmission wheel (847) fixed in Cotton curtain second feed roller (842) one end of a first transmission wheel set (847) includes a seventh, eighth, ninth transmission wheel (8471,8472,8473), the fifth drive belt (844) one end of the sheathed in said sixth gear wheel (837), the other end of the sleeve located in the seventh drive wheel (8471), said cap is provided in the fifth drive wheel (882) on the fourth belt (883) the eighth gear wheel (8472) drive connection, said second transmission wheel (849) includes a tenth, eleventh gear wheel (8491,8492), the sixth drive belt (848) of the end cap is set in the ninth the driving wheel (8473), the other end of the sleeve is set in the tenth drive wheel (8491), and that the eleventh gear wheel (8492) and the cotton, the first feeding means (85) drivingly connected to a pair of arm (845) in which a swing arm (845) pivotally connected to the first and second feed cotton curtain roller (841, 842) at one end of the roller shaft, and the other arm (845) is pivotally connected to the first and second feed cotton curtain roller (841, 842) the other end of the roller shaft, said pair of rocker arms (846) each with a tension spring on (8461), the tension spring (8461) fixed to the upper end in said arm (811), while the tension spring (8461) fixed to the lower end of the rocker arm (846), the rocker arm (846) and the lower end of the layering of the trolley (87) is connected; said Feeding device before (85) includes a front feed cotton curtain roller (851), cotton curtain down before feeding roller (852), before feeding cotton curtain (853), the twelfth gear wheel (854), seventh belt (855 ) and a front curtain Feeding tension roller (856), the front curtain cotton feeding roller (851) pivotally disposed on said pair of rocker arm (846) of the upper side of the lower front feed roll of cotton curtain (852 ) is set between a pair of pivot arm (846) on one side of the lower end, and with the front curtain cotton feeding roller (851) corresponding to the front feeding cotton curtain (853) provided on the front cap Feeding curtain, the lower roller (851, 852), the twelfth gear wheel (854) fixed to the front feed roller cotton curtain (851) at one end of the roller shaft, the seventh belt (855) located at one end of the twelfth gear wheel sets (854) the other end cap is provided in the eleventh gear wheel (8492), the front curtain Feeding tension roller (856) pivotally disposed on said pair of rocker arm (846), and the feed is located in front of cotton curtain (853) inside; said rear Feeding device (86) includes a rear feed roller cotton curtain (861), and fed cotton curtain lower roller (862), and fed cotton curtain (863), fourth gear (864 ), the thirteenth driving wheel (865) and the rear curtain Feeding tension roller (866), and fed cotton curtain roller (861) pivotally disposed on said pair of rocker arm (846) the other side of the upper end , and with said front curtain Feeding roller (851) corresponding to the lower roll and then fed cotton curtains (862) disposed between the pair pivot arm (846) of the lower end of the other side, and with the said Feeding curtain front lower roller (852) corresponding to and fed cotton curtain (863) set in after feeding cotton curtain upper and lower rollers (861,862), and the former fed with cotton curtain (853) match, the first four gear (864) fixed to the rear curtain cotton feeding roller (861) of the roller shaft, and with said third gear (8411) is engaged, the thirteenth transmission wheel (865) fixed to the rear curtain under Feeding Roller (862) of the roller shaft, and with said trolley layering (87) connected to the tension roller and fed cotton curtain (866) pivotally disposed on said pair of rocker arm (846), and in rear feed Cotton curtain (863), the said front and with the tension curtain cotton feeding roller (856) corresponding to; layering said trolley (87) includes a seventh motor (871), the first and second feed rollers cotton ( 872,875), a pair of belt shaft (873), a pair of cotton shop trolley rail (874), a pair of cotton shop car body (876), the first and second intermediate wheel (877a, 877b) and the eighth, nine drive belt (878,879), the seventh motor (871) is a reversible motor, mounted in said lapping machine frame (81), in the seventh electric motor (871) fixedly arranged on the motor shaft to the seventh a fourteenth transmission wheel (8711), a pair of belt drive shaft (873) in which a belt shaft (873) pivotally disposed between a pair of cotton shop car guide rails (874) at one end, while the other drive belt shaft (873 ) pivotally disposed between a pair tension adjusting seat (8741) of a pair of tension adjusting seat (8741) located between a pair of cotton shop car guide rails (874) the other end, a shaft of the drive belt (873) at each end of the solid There is a fifteenth drive wheel (8731), a pair of cotton shop car guide rails (874) fixed to correspond to each other lapper frame (811) of a pair of cotton shop car body (876) in which a cotton shop car body (876) is slidably disposed between a pair of car guide rails cotton shop (874) in which a cotton shop trolley rail (874), while the other cotton shop car body (876) is slidably disposed in another a cotton shop trolley rail (874), the first and second feed cotton rolls (872,875) is set parallel to each other between a pair of pivotally cotton shop car body (876), wherein: the first feeding roller cotton (872) fixed at one end of the roller shaft has a sixteenth drive wheel (8721), while in the second cotton feeding roller (875) has a solid end of the seventeenth drive wheel (8751), the sixteenth, the tenth seven transmission wheel (8721,8751) corresponding to each other in the pair of cotton shop car body (876) in which a cotton shop car body (876) is provided with a pivot on the eighteenth drive wheel (8763), first and second intermediate wheel (877a, 877b) each disposed coaxially with the pivot of said rocker arm (846) of the center of a lower end, said thirteenth transmission wheel (865) on the set of a tenth Transmission belt (8651) one end of the tenth transmission belt (8651) mounted on the other end of the sleeve of said first intermediate wheel (877a), the eighth drive belt (878) connected to the sixteenth transmission wheel (8721 ), the second intermediate wheel (877b) and the seventeenth, eighteenth drive wheel (8751,8763), the ninth belt (879) end cap placed on the fourteenth drive wheel (8711), and placed on the other end of the pivot sleeve disposed in cotton shop trolley rail (874) at one end of the belt shaft (873) a pair of the fifteenth driving wheel (8731) in which a fifteenth gear wheel (8731), and the cotton shop described car body (876) connected to one end of a belt XI (8764) one end of the eleventh belt (8764) and the other end cotton shop trolley body (876) connected to the other end, the eleventh Transmission belt (8764) placed on the middle of the fifteenth cap drive wheel (8731) on....-3Open workpiece during Pa and rotate and open the baking power supply, constant temperature is 30 minutes after baking temperature reaches 180 ℃, closes the baking power supply; Treat that vacuum reaches 2 * 10
-3Unlocking electronic rifle power supply during Pa is delayed time and is opened high pressure after 3 minutes, regulates heater current and carry out the fritting in Ti source; The fritting in Ti source scans with the line of 0.4A, has been melted in together when observing the Ti source, and the surface in Ti source is during oxide-free, opens plate washer and steams slowly 1 minute with the line of 0.4A; Rotating crucible is regulated heater current and is carried out the fritting in Ni source then; The fritting in Ni source scans with the line of 0.4A, has been melted in together when observing the Ni source, and the surface in Ni source is during oxide-free, opens plate washer and steams slowly 3 minutes with the line of 0.4A; Rotating crucible is regulated heater current and is carried out the fritting in Ag source then; The fritting in Ag source scans with the line of 0.6A, has been melted in together when observing the Ag source, and the surface in Ag source is during oxide-free, opens plate washer and steams slowly 5 minutes with the line of 0.6A; With the heater current set to zero, close baffle plate after evaporation finishes, close high pressure, close high vacuum gauge and workpiece and rotate, close high valve, preceding step valve again, close main pump; Vacuum chamber is cooled off, and 10 minutes to be cooled begin later on to inflate nitrogen flow during inflation≤2 L/min; Inflation finishes, and opens vacuum chamber, takes out silicon chip;
Repeat said process evaporation another side electrode.
15. anti-carve the double-sided metal electrode:
A. even glue (using BN308 glue, rotating speed 3000rpm, even glue time 40sec);
B. baking before (will spare silicon chip behind the glue put into 100 ± 5 ℃ baking oven toast 25-30min);
C. exposure (anti-carve version with the back side and shelter, ultraviolet exposure, time for exposure 6-9 second);
D. develop (silicon chip after will exposing immerses in the HFJ2200 type developer solution, soaks 6-8min, takes out the back and dries);
E. post bake (silicon chip after will developing is put into 140 ± 5 ℃ baking oven and toasted 30-40min);
F. the silicon chip of the Ti-Ni-Ag(at corrosion window place after with post bake immerses HF: glacial acetic acid: HNO
3=1:1:(15～25) in the hybrid corrosion liquid, wherein HF is that concentration is 48% solution, and glacial acetic acid is pure, HNO
3Be that concentration is 68% solution, temperature is 25 ± 3 ℃, and etching time 6-8min takes out the back and dashes 10 times with deionized water);
G. remove photoresist (silicon chip after will corroding is put into stripper and soaked 3-6min, and silicon chip is taken out, and uses deionized water rinsing 12 times).
16. alloy:
The silicon chip for the treatment of alloy is inserted on the diffusion boat, the diffusion boat that is inserted with silicon chip is sent in the flat-temperature zone of diffusion furnace, feed the pure nitrogen of 5 L/min in the diffusion pipeline, thermostat temperature 490-520 ℃, constant temperature 20-30min takes out then.
17. silicon test:
Automatic station with JUNO is tested V
DRM, BV
CBO, I
CBOEtc. parameter, use the PTHY2300 test I
H, V
TEtc. parameter, with capacitance measuring tester test junction capacitance C
O
18. saw blade:
With abrasive wheel cutting machine (veneer sawing machine) silicon chip is cut, speed is 20-30mm/sec.
19. packing chip.
Claims (1)
1. the production method of a low junction capacitance overvoltage protection thyristor apparatus chip, this method may further comprise the steps: silicon wafer polishing, oxidation, the short base diffusion of P type, photoetching N
+Emitter window, N
+Emitter region diffusion, chemical wet etching groove, trench etching, glassivation, lithography fair lead, two-sided electrode evaporation, alloy, chip testing and saw blade, it is characterized in that after the silicon chip step, before the short base of the P type diffusing step, do dual surface lithography N type ion implanted region earlier, utilize the masking action of oxide-film, adopt two-sided N type ion to inject, the implantation dosage of N type ion implanted region is 5E12～2.0E14 ions/cm
2, the width of N type ion implanted region is 30～150um; After N type ion injects oxidation and diffusion, form the N type doped region of a part; After the short base diffusion of P type, finally formed a N type zone buried regions under the short base of P type, the doping content of this N type zone buried regions is 1.0E15～6.0E15cm
-3
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| CN2009103019456A CN101587907B (en) | 2009-04-29 | 2009-04-29 | Production method of low junction capacitance overvoltage protection thyristor apparatus chip |
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| CN2009103019456A CN101587907B (en) | 2009-04-29 | 2009-04-29 | Production method of low junction capacitance overvoltage protection thyristor apparatus chip |
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| CN101587907B true CN101587907B (en) | 2011-07-20 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102280427B (en) * | 2011-07-04 | 2013-01-16 | 江苏捷捷微电子股份有限公司 | Silicon controlled packaging structure capable of packaging metal and plastic in mixed mode and method thereof |
| CN102789980B (en) * | 2012-07-18 | 2015-01-07 | 启东吉莱电子有限公司 | Production process of short base region structure for improving voltage |
| CN105633133B (en) * | 2016-03-14 | 2019-03-05 | 捷捷半导体有限公司 | The bidirectional thyristor chip and its manufacturing method of single negative signal triggering |
| CN107658296A (en) * | 2017-10-25 | 2018-02-02 | 启东吉莱电子有限公司 | A kind of thyristor surge suppressor that there are three tunnels to protect and its manufacture method |
| CN110061052B (en) * | 2019-04-30 | 2024-02-02 | 江苏捷捷微电子股份有限公司 | High forward blocking voltage gate extremely sensitive trigger unidirectional silicon controlled rectifier chip and manufacturing method |
| CN113161427A (en) * | 2020-11-30 | 2021-07-23 | 江苏吉莱微电子股份有限公司 | Low-capacitance high-voltage discharge tube and preparation method thereof |
| CN114301026B (en) * | 2021-12-31 | 2023-11-07 | 菲尼克斯亚太电气（南京）有限公司 | Insulating mounting piece, conductive module and lightning protection device assembly method for lightning protection device |
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| US4967256A (en) * | 1988-07-08 | 1990-10-30 | Texas Instruments Incorporated | Overvoltage protector |
| US5479031A (en) * | 1993-09-10 | 1995-12-26 | Teccor Electronics, Inc. | Four layer overvoltage protection device having buried regions aligned with shorting dots to increase the accuracy of overshoot voltage value |
| CN1577837A (en) * | 2003-07-09 | 2005-02-09 | 半导体元件工业有限责任公司 | Symmetrical high frequency SCR structure and method |
| CN1783511A (en) * | 2004-11-30 | 2006-06-07 | 安徽省祁门县黄山电器有限责任公司 | Thyrister, chip special for producing thyrister and its producing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4967256A (en) * | 1988-07-08 | 1990-10-30 | Texas Instruments Incorporated | Overvoltage protector |
| US5479031A (en) * | 1993-09-10 | 1995-12-26 | Teccor Electronics, Inc. | Four layer overvoltage protection device having buried regions aligned with shorting dots to increase the accuracy of overshoot voltage value |
| CN1577837A (en) * | 2003-07-09 | 2005-02-09 | 半导体元件工业有限责任公司 | Symmetrical high frequency SCR structure and method |
| CN1783511A (en) * | 2004-11-30 | 2006-06-07 | 安徽省祁门县黄山电器有限责任公司 | Thyrister, chip special for producing thyrister and its producing method |
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