CN101570871A - 一种利用特殊脉冲电源电沉积铜铟硒或铜铟镓硒薄膜的方法 - Google Patents
一种利用特殊脉冲电源电沉积铜铟硒或铜铟镓硒薄膜的方法 Download PDFInfo
- Publication number
- CN101570871A CN101570871A CNA2009100651478A CN200910065147A CN101570871A CN 101570871 A CN101570871 A CN 101570871A CN A2009100651478 A CNA2009100651478 A CN A2009100651478A CN 200910065147 A CN200910065147 A CN 200910065147A CN 101570871 A CN101570871 A CN 101570871A
- Authority
- CN
- China
- Prior art keywords
- pulse
- indium
- selenium
- copper
- galvanic deposit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Photovoltaic Devices (AREA)
- Electroplating Methods And Accessories (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009100651478A CN101570871B (zh) | 2009-06-09 | 2009-06-09 | 一种利用特殊脉冲电源电沉积铜铟硒或铜铟镓硒薄膜的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009100651478A CN101570871B (zh) | 2009-06-09 | 2009-06-09 | 一种利用特殊脉冲电源电沉积铜铟硒或铜铟镓硒薄膜的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101570871A true CN101570871A (zh) | 2009-11-04 |
CN101570871B CN101570871B (zh) | 2012-01-25 |
Family
ID=41230350
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009100651478A Expired - Fee Related CN101570871B (zh) | 2009-06-09 | 2009-06-09 | 一种利用特殊脉冲电源电沉积铜铟硒或铜铟镓硒薄膜的方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101570871B (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102181893A (zh) * | 2011-04-15 | 2011-09-14 | 河南大学 | 一种利用调节pH值电沉积制备富铟CuInSe2薄膜的方法 |
CN102839375A (zh) * | 2012-09-28 | 2012-12-26 | 哈尔滨理工大学 | 制备cis柔性薄膜太阳能电池的光吸收层的方法 |
CN103779438A (zh) * | 2012-10-22 | 2014-05-07 | 中物院成都科学技术发展中心 | 一种电化学沉积制备铜铟镓硒预制层的方法 |
CN103866360A (zh) * | 2012-12-10 | 2014-06-18 | 中物院成都科学技术发展中心 | 一种复杂波形脉冲离子液共镀铜铟镓硒预制层的方法 |
CN107400907A (zh) * | 2017-08-24 | 2017-11-28 | 重庆立道表面技术有限公司 | 碱性无氰镀镉除氢脆剂及其电镀液、电镀液的制备方法 |
CN107507874A (zh) * | 2017-08-07 | 2017-12-22 | 南开大学 | 一种用于化合物半导体薄膜及太阳电池的脉冲电沉积制备高质量铟薄膜的方法 |
CN112144086A (zh) * | 2020-09-24 | 2020-12-29 | 昆明理工大学 | 一种真空电化学沉积制备硒化物半导体的方法 |
-
2009
- 2009-06-09 CN CN2009100651478A patent/CN101570871B/zh not_active Expired - Fee Related
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102181893A (zh) * | 2011-04-15 | 2011-09-14 | 河南大学 | 一种利用调节pH值电沉积制备富铟CuInSe2薄膜的方法 |
CN102839375A (zh) * | 2012-09-28 | 2012-12-26 | 哈尔滨理工大学 | 制备cis柔性薄膜太阳能电池的光吸收层的方法 |
CN102839375B (zh) * | 2012-09-28 | 2014-06-18 | 哈尔滨理工大学 | 制备cis柔性薄膜太阳能电池的光吸收层的方法 |
CN103779438A (zh) * | 2012-10-22 | 2014-05-07 | 中物院成都科学技术发展中心 | 一种电化学沉积制备铜铟镓硒预制层的方法 |
CN103779438B (zh) * | 2012-10-22 | 2016-10-26 | 中物院成都科学技术发展中心 | 一种电化学沉积制备铜铟镓硒预制层的方法 |
CN103866360A (zh) * | 2012-12-10 | 2014-06-18 | 中物院成都科学技术发展中心 | 一种复杂波形脉冲离子液共镀铜铟镓硒预制层的方法 |
CN103866360B (zh) * | 2012-12-10 | 2016-10-05 | 中物院成都科学技术发展中心 | 一种复杂波形脉冲离子液共镀铜铟镓硒预制层的方法 |
CN107507874A (zh) * | 2017-08-07 | 2017-12-22 | 南开大学 | 一种用于化合物半导体薄膜及太阳电池的脉冲电沉积制备高质量铟薄膜的方法 |
CN107400907A (zh) * | 2017-08-24 | 2017-11-28 | 重庆立道表面技术有限公司 | 碱性无氰镀镉除氢脆剂及其电镀液、电镀液的制备方法 |
CN112144086A (zh) * | 2020-09-24 | 2020-12-29 | 昆明理工大学 | 一种真空电化学沉积制备硒化物半导体的方法 |
CN112144086B (zh) * | 2020-09-24 | 2021-12-14 | 昆明理工大学 | 一种真空电化学沉积制备硒化物半导体的方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101570871B (zh) | 2012-01-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101570871B (zh) | 一种利用特殊脉冲电源电沉积铜铟硒或铜铟镓硒薄膜的方法 | |
CN107871795B (zh) | 一种基于柔性钼衬底的镉掺杂铜锌锡硫硒薄膜的带隙梯度的调控方法 | |
US5871630A (en) | Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells | |
Araki et al. | Preparation of Cu2ZnSnS4 thin films by sulfurization of co‐electroplated Cu‐Zn‐Sn precursors | |
Jeon et al. | Formation and characterization of single-step electrodeposited Cu2ZnSnS4 thin films: Effect of complexing agent volume | |
US20140322859A1 (en) | Fabrication of ionic liquid electrodeposited cu-sn-zn-s-se thin films and method of making | |
CN104120467B (zh) | 一种组成可控的铜锌锡薄膜材料和铜锌锡硫基太阳能电池及其两者的制备方法 | |
Pawar et al. | Fabrication of Cu2ZnSnS4 thin film solar cell using single step electrodeposition method | |
CN102254998B (zh) | 无镉铜铟镓硒薄膜太阳能电池组件及其硫化锌缓冲层薄膜的制备方法 | |
Pawar et al. | Effect of annealing atmosphere on the properties of electrochemically deposited Cu2ZnSnS4 (CZTS) thin films | |
CN103762257B (zh) | 铜锌锡硫吸收层薄膜及铜锌锡硫太阳能电池的制备方法 | |
CN102268702A (zh) | 铜铟镓硒薄膜的光电化学沉积制备法 | |
CN105226117B (zh) | 一种双电位阶跃法电沉积后硫化退火制备铜铟镓硫太阳能电池薄膜材料的方法 | |
Mandati et al. | Pulsed electrodeposition of CuInSe2 thin films with morphology for solar cell applications | |
Yang et al. | Electrodeposited p-type Cu2O thin films at high pH for all-oxide solar cells with improved performance | |
US20110132764A1 (en) | Formation of a transparent conductive oxide film for use in a photovoltaic structure | |
Ho et al. | Preparation of CuInSe2 thin films by using various methods (a short review) | |
CN104465807A (zh) | 一种czts纳米阵列薄膜太阳能光伏电池及其制备方法 | |
CN102181893A (zh) | 一种利用调节pH值电沉积制备富铟CuInSe2薄膜的方法 | |
CN104319298A (zh) | 柔性衬底CdTe薄膜太阳能电池及其制备方法 | |
Wang et al. | CuInSe 2 thin films obtained by pulse-plating electrodeposition technique with novel pulse wave | |
CN105514192A (zh) | 一种电沉积后硫化退火制备太阳能电池缓冲层硫化锌薄膜材料的方法 | |
Chaudhari et al. | Pulsed electrodeposition of Cu2ZnSnS4 absorber layer precursor for photovoltaic application | |
CN103194726A (zh) | 一种铜铟镓硒薄膜的制造工艺 | |
CA2284826C (en) | Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C53 | Correction of patent for invention or patent application | ||
CB03 | Change of inventor or designer information |
Inventor after: Du Zuliang Inventor after: Wang Guangjun Inventor after: Pang Shan Inventor after: Wang Xiaoli Inventor after: Wan Shaoming Inventor after: Zhang Xingtang Inventor before: Du Zuliang Inventor before: Wang Xiaoli Inventor before: Wang Guangjun Inventor before: Wan Shaoming Inventor before: Zhang Xingtang |
|
COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: DU ZULIANG WANG XIAOLI WANG GUANGJUN WAN SHAOMING ZHANG XINGTANG TO: DU ZULIANG WANG GUANGJUN PANG SHAN WANG XIAOLI WAN SHAOMING ZHANG XINGTANG |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120125 Termination date: 20170609 |