CN101562210A - GaAs-based InAs/GaSb superlattice infrared photodetector and manufacturing method thereof - Google Patents
GaAs-based InAs/GaSb superlattice infrared photodetector and manufacturing method thereof Download PDFInfo
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- CN101562210A CN101562210A CNA2008101042434A CN200810104243A CN101562210A CN 101562210 A CN101562210 A CN 101562210A CN A2008101042434 A CNA2008101042434 A CN A2008101042434A CN 200810104243 A CN200810104243 A CN 200810104243A CN 101562210 A CN101562210 A CN 101562210A
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Abstract
The invention discloses a GaAs-based InAs/GaSb superlattice infrared photodetector with a wave band of 3 microns to 5 microns and a manufacturing method thereof. The infrared photodetector comprises a GaAs substrate, a GaAs buffer layer, an AlSb nucleating layer, a GaSb lower buffer layer, an AlSb/ GaSb superlattice layer, a GaSb upper buffer layer, an InAs/GaSb superlattice layer, a GaSb cover layer and titanium alloy poles from bottom to top. By using the invention, the GaSb buffer layers with high quality are grown on the GaAs substrate, and InAs/GaSb superlattices are grown on the GaSb buffer layers, moreover, the infrared photodetector with low dark current and low cost can be manufactured.
Description
Technical field
The present invention relates to semiconductor technology mid-infrared light electric explorer field, relate in particular to a kind of GaAs base InAs/GaSb superlattice 3 to 5 micron waveband infrared photoelectric detectors and preparation method thereof.
Background technology
Along with progress of science and technology, the Infrared Detectors that with military is core grows up gradually, all is widely used in dual-use fields such as strategic early-warning, tactics warning, night vision, guidance, communication, meteorology, earth resource detection, industrial flaw detection, medical science, spectrum, thermometric, atmospheric monitorings at present.
But Infrared Detectorss such as at present the most frequently used silicon-doped detector, InSb, QWIP, MCT all require to work at low temperatures, need special refrigeration plant, involve great expense, thereby application are restricted.And the InAs/GaSb Infrared Detectors is because the particularity of its material, and for example: the high effective mass in electronics and hole can effectively reduce wears electric current then, improves the density of states; The energy difference that heavy hole band and light hole band are bigger can reduce auger recombination, improves carrier lifetime etc., is the most possible at present third generation Infrared Detectors of realizing working and room temperature.
Though the InAs/GaSb superlattice growth can obtain less defects density on the GaSb substrate that is complementary with it, but a series of shortcomings such as the GaSb substrate costs an arm and a leg, do not have semi-insulating substrate, be difficult to reading circuit is integrated, thereby regrowth InAs/GaSb superlattice are made Infrared Detectors wide application prospect are arranged after growing high-quality GaSb resilient coating on the cheap GaAs substrate.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of GaAs base InAs/GaSb superlattice 3 to 5 micron waveband infrared photoelectric detectors and preparation method thereof, on the GaAs substrate, to grow high-quality GaSb resilient coating, and regeneration grows the InAs/GaSb superlattice, and then it is low to produce dark current, Infrared Detectors with low cost.
(2) technical scheme
For achieving the above object, technical scheme of the present invention is achieved in that:
A kind of GaAs base InAs/GaSb superlattice 3 to 5 micron waveband infrared photoelectric detectors, this infrared photoelectric detector is made of GaAs substrate, GaAs resilient coating, AlSb nucleating layer, GaSb bottom breaker, AlSb/GaSb superlattice layer, the last resilient coating of GaSb, InAs/GaSb superlattice layer, GaSb cap rock and titanium alloy electrode from bottom to top.
Preferably, the thickness of described GaAs resilient coating is 200nm to 500nm, the thickness of described AlSb nucleating layer is 5nm, the thickness of described GaSb bottom breaker is 0.5 to 1.0 μ m, the thickness that described GaSb goes up resilient coating is 0.5 to 1.0 μ m, the thickness of described GaSb cap rock is 20 to 200nm, and the thickness of described titanium alloy electrode is 200nm.
Preferably, described AlSb/GaSb superlattice layer is to be made of the AlSb barrier layer in 20 to 40 cycles of alternating growth/GaSb potential well layer, and wherein the thickness of every layer of AlSb is 5nm, and the thickness of GaSb is 5nm.
Preferably, described InAs/GaSb superlattice layer is to be made of the InAs layer that is no less than 200 cycles of alternating growth/GaSb layer, and wherein the thickness of every layer of GaSb is 2.4nm, and every layer of InAs thickness is by surveying the wavelength decision.
Preferably, in the described InAs/GaSb superlattice layer growth course, the switching sequence of phase shutter is followed successively by weekly: open Sb, open In, open In and As simultaneously, open As, open Sb, open Ga and Sb simultaneously.
A kind of method of making GaAs base InAs/GaSb superlattice 3 to 5 micron waveband infrared photoelectric detectors, this method comprises:
The GaAs substrate is placed on the molecular beam epitaxial device specimen holder, and deoxidation heats up substrate then, degasification under the As protection;
Growth GaAs resilient coating;
Reduce underlayer temperature, the AlSb nucleating layer of growing successively, GaSb bottom breaker, AlSb/GaSb superlattice layer and GaSb go up resilient coating;
Reduce underlayer temperature, grow successively InAs/GaSb superlattice layer and GaSb cap rock;
The epitaxial wafer for preparing adopts standard photolithography techniques and tartaric acid solution etching, thereby sputtered titanium billon making electrode is made into detector then.
Preferably; described the GaAs substrate is placed on the molecular beam epitaxial device specimen holder; deoxidation; then substrate is heated up; the step of degasification specifically comprises under the As protection: the Semi-insulating GaAs substrate is placed on the molecular beam epitaxial device specimen holder; 580 ℃ of deoxidations, then substrate is risen to 630 ℃ of degasification 3 minutes under As protection.
Preferably, the step of described growth GaAs resilient coating is to carry out under 580 ℃ of temperature.
Preferably, described reduction underlayer temperature, the AlSb nucleating layer of growing successively, GaSb bottom breaker, AlSb/GaSb superlattice layer and GaSb go up the step of resilient coating, are that underlayer temperature is reduced to 500 ℃.
Preferably, described reduction underlayer temperature, the step of grow successively InAs/GaSb superlattice layer and GaSb cap rock is that underlayer temperature is reduced to 380 to 420 ℃.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, utilize the present invention, on the GaAs substrate, grown high-quality GaSb resilient coating, and on this GaSb resilient coating, grown the InAs/GaSb superlattice, and then it is low to produce dark current, Infrared Detectors with low cost.
2, this infrared photoelectric detector provided by the invention is based on the particularity of InAs/GaSb superlattice structure, can significantly suppress the dark current of detector and photoelectric current strengthens, thereby realize the detector detectivity is improved.
3, this infrared photoelectric detector provided by the invention can be made the different Infrared Detectorss of surveying wavelength by the thickness that changes InAs layer in the InAs/GaSb superlattice.
Description of drawings
Fig. 1 is the structural representation of InAs/GaSb superlattice infrared photodetector provided by the invention;
Fig. 2 is the dispensing flow path figure of making InAs/GaSb superlattice infrared photodetector provided by the invention;
The growth course schematic diagram of Fig. 3 is the InAs/GaSb superlattice weekly phase;
Fig. 4 is that cut-off wavelength is the spectral response figure of the InAs/GaSb Infrared Detectors of 5 μ m.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
To be example, in conjunction with the accompanying drawings embodiment of the present invention is described in further detail below by surveying near the InAs/GaSb Infrared Detectors of wavelength 5 μ m:
As shown in Figure 1, Fig. 1 is the structural representation of InAs/GaSb superlattice infrared photodetector provided by the invention, and this infrared photoelectric detector is made of GaAs substrate, GaAs resilient coating, AlSb nucleating layer, GaSb bottom breaker, AlSb/GaSb superlattice layer, the last resilient coating of GaSb, InAs/GaSb superlattice layer, GaSb cap rock and titanium alloy electrode from bottom to top.
The thickness of above-mentioned GaAs resilient coating is 200nm to 500nm, the thickness of described AlSb nucleating layer is 5nm, the thickness of described GaSb bottom breaker is 0.5 to 1.0 μ m, the thickness that described GaSb goes up resilient coating is 0.5 to 1.0 μ m, the thickness of described GaSb cap rock is 20 to 200nm, and the thickness of described titanium alloy electrode is 200nm.
Above-mentioned AlSb/GaSb superlattice layer is to be made of the AlSb barrier layer in 20 to 40 cycles of alternating growth/GaSb potential well layer, and wherein the thickness of every layer of AlSb is 5nm, and the thickness of GaSb is 5nm.
Above-mentioned InAs/GaSb superlattice layer is to be made of the InAs layer that is no less than 200 cycles of alternating growth/GaSb layer, and wherein the thickness of every layer of GaSb is 2.4nm, and every layer of InAs thickness is by surveying the wavelength decision.
In the above-mentioned InAs/GaSb superlattice layer growth course, the switching sequence of phase shutter is followed successively by weekly: open Sb, open In, open In and As simultaneously, open As, open Sb, open Ga and Sb simultaneously.
The preparation method of InAs/GaSb Infrared Detectors of the present invention, be on the GaAs substrate, to grow high-quality resilient coating earlier with molecular beam epitaxy technique, the InAs/GaSb superlattice epitaxial wafer of back preparation 3 to 5 μ m detecting bands utilizes this epitaxial wafer to make infrared photoconductivity detector again.At first, adopt molecular beam epitaxial method grow successively on GaAs substrate (1) GaAs resilient coating (2), AlSb nucleating layer (3), GaSb bottom breaker (4), AlSb/GaSb superlattice layer (5), the last resilient coating of GaSb (6), InAs/GaSb superlattice layer (7), GaSb cap rock (8), the making electrode manufactures photodetector on epitaxial wafer then.Particularly, as shown in Figure 2, this method may further comprise the steps:
Step 2, the GaAs resilient coating of under 580 ℃ of temperature, growing;
Step 3, underlayer temperature is reduced to 500 ℃ of the AlSb layers of growing successively, GaSb bottom breaker, AlSb/GaSb superlattice layer and GaSb go up resilient coating;
Step 4, underlayer temperature is reduced to 380 to 420 ℃ of growths InAs/GaSb superlattice and GaSb cap rocks;
InAs layer and GaSb layer that described InAs/GaSb superlattice layer (7) was alternately arranged by 200 cycles are formed.
The InAs layer thickness is 2.4nm in each cycle; The GaSb layer thickness is 2.4nm in each cycle; The growing method in each cycle was opened the Sb shutter earlier 4 seconds as shown in Figure 3, opened the In shutter again 3 seconds, opened In and As shutter then simultaneously 98 seconds; After this only open the As shutter 5 seconds, opened the Sb shutter again 4 seconds, opened Ga and Sb shutter at last simultaneously 16 seconds.
The speed of growth of InAs is 0.081ML/s, and the speed of growth of GaSb is 0.5ML/s.
Fig. 4 shows the spectral response figure that cut-off wavelength is the InAs/GaSb Infrared Detectors of 5 μ m.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1, a kind of GaAs base InAs/GaSb superlattice 3 to 5 micron waveband infrared photoelectric detectors, it is characterized in that this infrared photoelectric detector is made of GaAs substrate, GaAs resilient coating, AlSb nucleating layer, GaSb bottom breaker, AlSb/GaSb superlattice layer, the last resilient coating of GaSb, InAs/GaSb superlattice layer, GaSb cap rock and titanium alloy electrode from bottom to top.
2, GaAs base InAs/GaSb superlattice 3 to 5 micron waveband infrared photoelectric detectors according to claim 1, it is characterized in that, the thickness of described GaAs resilient coating is 200nm to 500nm, the thickness of described AlSb nucleating layer is 5nm, the thickness of described GaSb bottom breaker is 0.5 to 1.0 μ m, the thickness that described GaSb goes up resilient coating is 0.5 to 1.0 μ m, and the thickness of described GaSb cap rock is 20 to 200nm, and the thickness of described titanium alloy electrode is 200nm.
3, GaAs base InAs/GaSb superlattice 3 to 5 micron waveband infrared photoelectric detectors according to claim 1, it is characterized in that, described AlSb/GaSb superlattice layer is to be made of the AlSb barrier layer in 20 to 40 cycles of alternating growth/GaSb potential well layer, wherein the thickness of every layer of AlSb is 5nm, and the thickness of GaSb is 5nm.
4, GaAs base InAs/GaSb superlattice 3 to 5 micron waveband infrared photoelectric detectors according to claim 1, it is characterized in that, described InAs/GaSb superlattice layer is to be made of the InAs layer that is no less than 200 cycles of alternating growth/GaSb layer, wherein the thickness of every layer of GaSb is 2.4nm, and every layer of InAs thickness is by surveying the wavelength decision.
5, GaAs base InAs/GaSb superlattice 3 to 5 micron waveband infrared photoelectric detectors according to claim 1, it is characterized in that, in the described InAs/GaSb superlattice layer growth course, the switching sequence of phase shutter is followed successively by weekly: open Sb, open In, open In and As simultaneously, open As, open Sb, open Ga and Sb simultaneously.
6, a kind of method of making GaAs base InAs/GaSb superlattice 3 to 5 micron waveband infrared photoelectric detectors is characterized in that this method comprises:
The GaAs substrate is placed on the molecular beam epitaxial device specimen holder, and deoxidation heats up substrate then, degasification under the As protection;
Growth GaAs resilient coating;
Reduce underlayer temperature, the AlSb nucleating layer of growing successively, GaSb bottom breaker, AlSb/GaSb superlattice layer and GaSb go up resilient coating;
Reduce underlayer temperature, grow successively InAs/GaSb superlattice layer and GaSb cap rock;
The epitaxial wafer for preparing adopts standard photolithography techniques and tartaric acid solution etching, thereby sputtered titanium billon making electrode is made into detector then.
7, the method for making GaAs base InAs/GaSb superlattice 3 to 5 micron waveband infrared photoelectric detectors according to claim 6; it is characterized in that; described the GaAs substrate is placed on the molecular beam epitaxial device specimen holder; deoxidation; then substrate is heated up, the step of degasification specifically comprises under the As protection:
The Semi-insulating GaAs substrate is placed on the molecular beam epitaxial device specimen holder,, then substrate is risen to 630 ℃ of degasification 3 minutes under As protection 580 ℃ of deoxidations.
8, the method for making GaAs base InAs/GaSb superlattice 3 to 5 micron waveband infrared photoelectric detectors according to claim 6 is characterized in that the step of described growth GaAs resilient coating is to carry out under 580 ℃ of temperature.
9, the method for making GaAs base InAs/GaSb superlattice 3 to 5 micron waveband infrared photoelectric detectors according to claim 6, it is characterized in that, described reduction underlayer temperature, grow successively AlSb nucleating layer, GaSb bottom breaker, AlSb/GaSb superlattice layer and GaSb goes up the step of resilient coating, is that underlayer temperature is reduced to 500 ℃.
10, the method for making GaAs base InAs/GaSb superlattice 3 to 5 micron waveband infrared photoelectric detectors according to claim 6, it is characterized in that, described reduction underlayer temperature, the step of grow successively InAs/GaSb superlattice layer and GaSb cap rock is that underlayer temperature is reduced to 380 to 420 ℃.
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101814545A (en) * | 2010-03-11 | 2010-08-25 | 中国科学院半导体研究所 | InAs/GaSb superlattice infrared photoelectric detector for HPT (Hydrogenated Propylene Tetramer) structure |
| CN102011182A (en) * | 2010-09-28 | 2011-04-13 | 中国电子科技集团公司第十八研究所 | Method for manufacturing lattice graded buffer layer |
| CN103233271A (en) * | 2013-04-18 | 2013-08-07 | 中国科学院半导体研究所 | Method for epitaxial growth of InAs/GaSb type-II superlattice on GaAs substrate |
| CN103247675A (en) * | 2013-05-23 | 2013-08-14 | 哈尔滨工业大学 | Heterojunction triode with functions of photoelectric conversion and amplification |
| CN103474501A (en) * | 2013-09-13 | 2013-12-25 | 中国科学技术大学 | Selective emitter gallium antimonide infrared battery and manufacturing method thereof |
| WO2014001840A1 (en) | 2012-06-26 | 2014-01-03 | Aselsan Elektronik Sanayi Ve Ticaret Anonim Sirketi | Inas/alsb/gasb based type- ii sl pin detector with p on n and n on p configurations |
| CN104269740A (en) * | 2014-09-23 | 2015-01-07 | 中国科学院半导体研究所 | Laser and manufacturing method thereof |
| CN104900733A (en) * | 2015-06-11 | 2015-09-09 | 吉林大学 | In1-xGaxSb/GaSb strained quantum well intermediate band thermophotovoltatic cell based on GaSb, and preparation method for cell |
| CN105206702A (en) * | 2014-06-27 | 2015-12-30 | 中国人民解放军军械工程学院 | Novel-structurally single-photon detector |
| CN109950339A (en) * | 2019-03-27 | 2019-06-28 | 浙江焜腾红外科技有限公司 | Super medium-wave infrared detector for monitoring poisonous gas |
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2008
- 2008-04-16 CN CNA2008101042434A patent/CN101562210A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101814545B (en) * | 2010-03-11 | 2012-01-04 | 中国科学院半导体研究所 | InAs/GaSb superlattice infrared photoelectric detector for HPT (Hydrogenated Propylene Tetramer) structure |
| CN101814545A (en) * | 2010-03-11 | 2010-08-25 | 中国科学院半导体研究所 | InAs/GaSb superlattice infrared photoelectric detector for HPT (Hydrogenated Propylene Tetramer) structure |
| CN102011182A (en) * | 2010-09-28 | 2011-04-13 | 中国电子科技集团公司第十八研究所 | Method for manufacturing lattice graded buffer layer |
| WO2014001840A1 (en) | 2012-06-26 | 2014-01-03 | Aselsan Elektronik Sanayi Ve Ticaret Anonim Sirketi | Inas/alsb/gasb based type- ii sl pin detector with p on n and n on p configurations |
| CN103233271A (en) * | 2013-04-18 | 2013-08-07 | 中国科学院半导体研究所 | Method for epitaxial growth of InAs/GaSb type-II superlattice on GaAs substrate |
| CN103233271B (en) * | 2013-04-18 | 2016-09-28 | 中国科学院半导体研究所 | A kind of method of the InAs/GaSb bis-class superlattices of epitaxial growth on gaas substrates |
| CN103247675A (en) * | 2013-05-23 | 2013-08-14 | 哈尔滨工业大学 | Heterojunction triode with functions of photoelectric conversion and amplification |
| CN103474501A (en) * | 2013-09-13 | 2013-12-25 | 中国科学技术大学 | Selective emitter gallium antimonide infrared battery and manufacturing method thereof |
| CN103474501B (en) * | 2013-09-13 | 2016-01-20 | 中国科学技术大学 | A kind of selective emitter gallium antimonide infrared cell and preparation method thereof |
| CN105206702A (en) * | 2014-06-27 | 2015-12-30 | 中国人民解放军军械工程学院 | Novel-structurally single-photon detector |
| CN105206702B (en) * | 2014-06-27 | 2017-10-10 | 中国人民解放军军械工程学院 | A kind of single-photon detector of new structure |
| CN104269740A (en) * | 2014-09-23 | 2015-01-07 | 中国科学院半导体研究所 | Laser and manufacturing method thereof |
| CN104269740B (en) * | 2014-09-23 | 2018-01-30 | 中国科学院半导体研究所 | A kind of laser and preparation method thereof |
| CN104900733A (en) * | 2015-06-11 | 2015-09-09 | 吉林大学 | In1-xGaxSb/GaSb strained quantum well intermediate band thermophotovoltatic cell based on GaSb, and preparation method for cell |
| CN109950339A (en) * | 2019-03-27 | 2019-06-28 | 浙江焜腾红外科技有限公司 | Super medium-wave infrared detector for monitoring poisonous gas |
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Open date: 20091021 |