CN102544229A - Method for producing very-long wave indium arsenide (InAs)/gallium antimonide (GaSb) second class superlattice infrared detector material - Google Patents
Method for producing very-long wave indium arsenide (InAs)/gallium antimonide (GaSb) second class superlattice infrared detector material Download PDFInfo
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Abstract
The invention discloses a method for producing a very-long wave indium arsenide (InAs)/gallium antimonide (GaSb) second class superlattice infrared detector material, which comprises the step that: a P type doped GaSb buffer layer, a P type doped medium wave InAs/GaSb second class superlattice layer, a non-doped very-long wave InAs/GaSb second class superlattice layer, a N type doped medium wave InAs/GaSb second class superlattice layer and an N type doped InAs upper contact layer are sequentially grown on a semi-insulating GaSb substrate, so the very-long wave InAs/GaSb second class superlattice infrared detector material is obtained. After the method is utilized, because 'Sb-soak' and 'grow interruption' which are well designed are added in an interface design, the quality of the superlattice material is further improved.
Description
Technical field
The present invention relates to semiconductor infrared detection technique field, especially relate to the preparation method of two types of superlattice infrared detector materials of a kind of very long wave wave band (12～20 microns) InAs/GaSb.
Background technology
Wave band is that 12～20 microns very long wave Infrared Detectors has important use aspect strategic early-warning, atmospheric temperature and the detection of relative humidity profile, the distribution of atmosphere oligo-element and the space exploration.Traditional mercury-cadmium tellurid detector has excellent detection performance, but along with the increase of wavelength, its material difficulty sharply increases, and runs into very big challenge in the very long wave section.Quantum trap infrared detector is prone to realize the detection of very long wave section, but its quantum efficiency is lower, and the performance of device receives certain restriction.And two types of superlattice are desirable very long wave detecting materials, and its advantage mainly contains: material homogeneity is good, and leakage current is low; Auger recombination receives very big inhibition; Carrier lifetime is long, and working temperature is high, and the GaSb substrate to compare the used tellurium zinc chrome substrate of mercury cadmium telluride cheap and area is big.This makes it at very long wave section wave band significant advantage arranged.
But; The preparation of two types of superlattice infrared detector materials of very long wave InAs/GaSb is difficulty very; This is because absorb the super crystal lattice material of cut-off wavelength at the very long wave wave band; InAs thickness in its one-period generally need reach about 5nm, and has 0.6% lattice mismatch between InAs and the backing material GaSb.This just needs to introduce more InSb material and comes equilibrium stress, and has 7% lattice mismatch between InSb and the GaSb, and the introducing of a large amount of InSb is easy to cause the deterioration of interface quality, thereby influences quality of materials.
To an above difficult problem, the invention provides a kind of " directly InSb growth " through accurately controlling, the method that " Sb immersion " and " growth interruption " combine has realized two types of super crystal lattice material preparations of high-quality very long wave InAs/GaSb.
Summary of the invention
The technical problem that (one) will solve
In view of this, main purpose of the present invention is to provide a kind of very long wave InAs/GaSb preparation method of two types of superlattice infrared detector materials, to realize the preparation of two types of super crystal lattice materials of high-quality very long wave InAs/GaSb.
(2) technical scheme
For achieving the above object; The invention provides a kind of method for preparing two types of superlattice infrared detector materials of very long wave InAs/GaSb; This method is at contact layer on the InAs that mixes of two types of superlattice layers of very long wave InAs/GaSb of the GaSb resilient coating that mixes of growing P-type, two types of superlattice layers of medium wave InAs/GaSb that the P type mixes, non-doping, two types of superlattice layers of medium wave InAs/GaSb that the N type mixes and N type successively on the semi-insulating GaSb substrate, obtains two types of superlattice infrared detector materials of very long wave InAs/GaSb.
In the such scheme; Said at contact layer on the InAs that mixes of two types of superlattice layers of very long wave InAs/GaSb of the GaSb resilient coating that mixes of growing P-type, two types of superlattice layers of medium wave InAs/GaSb that the P type mixes, non-doping, two types of superlattice layers of medium wave InAs/GaSb that the N type mixes and N type successively on the semi-insulating GaSb substrate, be to use molecular beam epitaxial method to realize.
In the such scheme, two types of superlattice layers of medium wave InAs/GaSb that two types of superlattice layers of medium wave InAs/GaSb that said P type mixes and said N type mix all are that employing absorption cut-off wavelength is 5 microns a medium wave superlattice structure, and the thickness of the two all is 500nm.
In the such scheme, it is that 14.5 microns superlattice period is formed that two types of superlattice layers of the very long wave InAs/GaSb of said non-doping absorb cut-off wavelength by 300 cycles, and gross thickness is 2.5 microns.In the superlattice period of two types of superlattice layers of very long wave InAs/GaSb of said non-doping, two interfaces are the InSb interface all, and are that " Sb immersion " and " growth interruption " realizes through " directly InSb growth ".Said through " directly InSb growth ", the process of a superlattice period of " Sb immersion " and " growth interruption " growth is following: open Ga, Sb source, generate 11 GaSb atomic layers; Close the Ga source, opened the In source 0.8 second, generate the InSb boundary layer; Close the In source, keep the Sb source to open 2 seconds, make surface-stable; Closed institute active 1 second, the Sb element in the environment is left; Open In, As source, generate 16 InAs atomic layers; Closed institute active 1 second, the As in the environment is left; Open the Sb source and soaked the surface 3 seconds, form certain InSb interface, stablize the Sb source simultaneously; And opened the In source 2 seconds, form the InSb interface.And said superlattice period is all 380 ℃ of growths.
In the such scheme, the thickness of the GaSb resilient coating that said P type mixes is 1 micron, and the thickness that the InAs that said N type mixes goes up contact layer is 20nm.
(3) beneficial effect
Can find out that from technique scheme the present invention has following beneficial effect:
1. utilize the present invention,, be equivalent to increase potential barrier respectively, so reduced dark current at conduction band and valence band because p district and n district have used two types of superlattice structures of medium wave InAs/GaSb.
2. utilize the present invention, owing to used the INTERFACE DESIGN of both sides InSb, avoided one-sided InSb layer blocked up and interface quality that occur worsens phenomenon on the one hand, experiment confirm on the other hand, the INTERFACE DESIGN of both sides InSb has better optical property.
3. utilize the present invention, owing in INTERFACE DESIGN, increased well-designed " Sb-soak " and " growth interruption ", so the super crystal lattice material quality is further enhanced.
Description of drawings
In order to further specify technology contents of the present invention, below in conjunction with Figure of description the present invention is explained in detail, wherein:
Fig. 1 is the method flow diagram according to two types of superlattice infrared detector materials of preparation very long wave InAs/GaSb of the embodiment of the invention;
Fig. 2 is each the cycle growth shutter control chart of two types of superlattice of very long wave InAs/GaSb according to the embodiment of the invention;
Fig. 3 is the X-ray diffractogram according to two types of superlattice infrared detector materials of very long wave InAs/GaSb of the embodiment of the invention;
Fig. 4 is the structural representation according to two types of superlattice Infrared Detectorss of very long wave InAs/GaSb of the embodiment of the invention;
Fig. 5 utilizes two types of superlattice Infrared Detectorss of very long wave InAs/GaSb single tube device of embodiment of the invention preparation to carry out the sketch map as a result that optogalvanic spectra and quantum efficiency are tested.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, to further explain of the present invention.
As shown in Figure 1; Fig. 1 is the method flow diagram according to two types of superlattice infrared detector materials of preparation very long wave InAs/GaSb of the embodiment of the invention; This method is to use molecular beam epitaxial method and equipment; At contact layer on the InAs that mixes of two types of superlattice layers of very long wave InAs/GaSb of the GaSb resilient coating that mixes of growing P-type, two types of superlattice layers of medium wave InAs/GaSb that the P type mixes, non-doping, two types of superlattice layers of medium wave InAs/GaSb that the N type mixes and N type successively on the semi-insulating GaSb substrate, obtain two types of superlattice infrared detector materials of very long wave InAs/GaSb.
Wherein, two types of superlattice layers of medium wave InAs/GaSb that two types of superlattice layers of medium wave InAs/GaSb that said P type mixes and said N type mix all are that employing absorption cut-off wavelength is 5 microns a medium wave superlattice structure, and the thickness of the two all is 500nm.The thickness of the GaSb resilient coating that said P type mixes is 1 micron, and the thickness that the InAs that said N type mixes goes up contact layer is 20nm.
It is that 14.5 microns superlattice period is formed that two types of superlattice layers of the very long wave InAs/GaSb of said non-doping absorb cut-off wavelength by 300 cycles, and gross thickness is 2.5 microns.In the superlattice period of two types of superlattice layers of very long wave InAs/GaSb of said non-doping, two interfaces are the InSb interface all, and are that " Sb immersion " and " growth interruption " realizes through " directly InSb growth ".And said superlattice period is all 380 ℃ of growths.
Based on method shown in Figure 1; Fig. 2 shows each the cycle growth shutter control chart of two types of superlattice of very long wave InAs/GaSb according to the embodiment of the invention; Said through " directly InSb growth "; The process of a superlattice period of " Sb immersion " and " growth interruption " growth, i.e. the shutter order of the MBE of two types of superlattice one-periods of this very long wave InAs/GaSb growth, specific as follows:
Step 1: open Ga, Sb source, generate 11 GaSb atomic layers;
Step 2: close the Ga source, opened the In source 0.8 second, generate the InSb boundary layer;
Step 3: close the In source, keep the Sb source to open 2 seconds, make surface-stable;
Step 4: closed institute active 1 second, the Sb element in the environment is left;
Step 5: open In, As source, generate 16 InAs atomic layers;
Step 6: closed institute active 1 second, the As in the environment is left;
Step 7: open the Sb source and soaked the surface 2 seconds, form certain InSb interface, stablize the Sb source simultaneously;
Step 8: opened the In source 1 second, and formed the InSb interface.
As shown in Figure 3, Fig. 3 is that the satellites half-breadth is 21arcsec only, has showed outstanding quality of materials according to the X ray double crystal diffraction figure of two types of superlattice infrared detector materials of very long wave InAs/GaSb sample of embodiment of the invention preparation.
Two types of superlattice infrared detector materials of very long wave InAs/GaSb for the present invention's preparation; Use conventional semiconductor processing that two types of superlattice infrared detector materials of this very long wave InAs/GaSb are processed as the single tube device, this conventional semiconductor processing specifically comprises: utilize the standard semiconductor technological process to make single tube detector mesa structure; At the mesa surfaces splash-proofing sputtering metal, and erode away electrode; Draw with spun gold, accomplish element manufacturing.Fig. 4 shows the structural representation according to two types of superlattice Infrared Detectorss of very long wave InAs/GaSb of the embodiment of the invention.
As shown in Figure 5, Fig. 5 shows the sketch map as a result that utilizes two types of superlattice Infrared Detectorss of above-mentioned very long wave InAs/GaSb single tube device to carry out optogalvanic spectra and quantum efficiency test.14.5 microns of above-mentioned single tube device cut-off wavelengths have realized the detection that very long wave is waveband infrared.Peak value quantum efficiency 50%, cut-off wavelength quantum efficiency 15%.
Above-described specific embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely specific embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. method for preparing two types of superlattice infrared detector materials of very long wave InAs/GaSb; It is characterized in that; This method is at contact layer on the InAs that mixes of two types of superlattice layers of very long wave InAs/GaSb of the GaSb resilient coating that mixes of growing P-type, two types of superlattice layers of medium wave InAs/GaSb that the P type mixes, non-doping, two types of superlattice layers of medium wave InAs/GaSb that the N type mixes and N type successively on the semi-insulating GaSb substrate, obtains two types of superlattice infrared detector materials of very long wave InAs/GaSb.
2. the method for preparing two types of superlattice infrared detector materials of very long wave InAs/GaSb according to claim 1; It is characterized in that; Said at contact layer on the InAs that mixes of two types of superlattice layers of very long wave InAs/GaSb of the GaSb resilient coating that mixes of growing P-type, two types of superlattice layers of medium wave InAs/GaSb that the P type mixes, non-doping, two types of superlattice layers of medium wave InAs/GaSb that the N type mixes and N type successively on the semi-insulating GaSb substrate, be to use molecular beam epitaxial method to realize.
3. the method for preparing two types of superlattice infrared detector materials of very long wave InAs/GaSb according to claim 1; It is characterized in that; Two types of superlattice layers of medium wave InAs/GaSb that two types of superlattice layers of medium wave InAs/GaSb that said P type mixes and said N type mix all are that employing absorption cut-off wavelength is 5 microns a medium wave superlattice structure, and the thickness of the two all is 500nm.
4. the method for preparing two types of superlattice infrared detector materials of very long wave InAs/GaSb according to claim 1; It is characterized in that; It is that 14.5 microns superlattice period is formed that two types of superlattice layers of the very long wave InAs/GaSb of said non-doping absorb cut-off wavelength by 300 cycles, and gross thickness is 2.5 microns.
5. the method for preparing two types of superlattice infrared detector materials of very long wave InAs/GaSb according to claim 4; It is characterized in that; In the superlattice period of two types of superlattice layers of very long wave InAs/GaSb of said non-doping; Two interfaces are the InSb interface all, and are that " Sb immersion " and " growth interruption " realizes through " directly InSb growth ".
6. the method for preparing two types of superlattice infrared detector materials of very long wave InAs/GaSb according to claim 5; It is characterized in that; Said through " directly InSb growth ", the process of a superlattice period of " Sb immersion " and " growth interruption " growth is following:
Open Ga, Sb source, generate 11 GaSb atomic layers;
Close the Ga source, opened the In source 0.8 second, generate the InSb boundary layer;
Close the In source, keep the Sb source to open 2 seconds, make surface-stable;
Closed institute active 1 second, the Sb element in the environment is left;
Open In, As source, generate 16 InAs atomic layers;
Closed institute active 1 second, the As in the environment is left;
Open the Sb source and soaked the surface 3 seconds, form certain InSb interface, stablize the Sb source simultaneously; And
Open the In source 2 seconds, and formed the InSb interface.
7. the method for preparing two types of superlattice infrared detector materials of very long wave InAs/GaSb according to claim 6 is characterized in that, said superlattice period is all 380 ℃ of growths.
8. the method for preparing two types of superlattice infrared detector materials of very long wave InAs/GaSb according to claim 1 is characterized in that, the thickness of the GaSb resilient coating that said P type mixes is 1 micron, and the thickness that the InAs that said N type mixes goes up contact layer is 20nm.
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| CN103233271A (en) * | 2013-04-18 | 2013-08-07 | 中国科学院半导体研究所 | Method for epitaxial growth of InAs/GaSb type-II superlattice on GaAs substrate |
| CN103500765A (en) * | 2013-10-10 | 2014-01-08 | 中国科学院上海技术物理研究所 | Type-II superlattice structure based on arsenic valve switch and preparation method |
| CN105932106A (en) * | 2016-05-26 | 2016-09-07 | 中国科学院半导体研究所 | Manufacturing method for InAs/InSb/GaSb/InSb II-type superlattice material and product |
| CN107507877A (en) * | 2017-08-23 | 2017-12-22 | 苏州焜原光电有限公司 | A kind of middle long wave infrared region II class superlattices |
| CN108133970A (en) * | 2017-11-02 | 2018-06-08 | 武汉高芯科技有限公司 | A kind of InAs/GaSb superlattices infrared detector and preparation method thereof |
| CN108417663A (en) * | 2018-04-10 | 2018-08-17 | 中国科学院上海技术物理研究所 | It is a kind of to be used for measuring the device architecture that super crystal lattice material lacks sub- lateral diffusion length |
| CN108648987A (en) * | 2018-03-26 | 2018-10-12 | 中国科学院半导体研究所 | A kind of optimization method at molecular beam epitaxial growth LONG WAVE INFRARED superlattices interface |
| CN109461786A (en) * | 2018-09-20 | 2019-03-12 | 中国科学院半导体研究所 | Binary channels Long Wave Infrared Probe |
| CN114284394A (en) * | 2022-03-04 | 2022-04-05 | 武汉高芯科技有限公司 | Growth method of superlattice detector material and superlattice infrared detector |
| CN115824416A (en) * | 2023-02-14 | 2023-03-21 | 太原国科半导体光电研究院有限公司 | Secondary superlattice infrared detector based on intelligent control |
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| CN103233271B (en) * | 2013-04-18 | 2016-09-28 | 中国科学院半导体研究所 | A kind of method of the InAs/GaSb bis-class superlattices of epitaxial growth on gaas substrates |
| CN103233271A (en) * | 2013-04-18 | 2013-08-07 | 中国科学院半导体研究所 | Method for epitaxial growth of InAs/GaSb type-II superlattice on GaAs substrate |
| CN103500765A (en) * | 2013-10-10 | 2014-01-08 | 中国科学院上海技术物理研究所 | Type-II superlattice structure based on arsenic valve switch and preparation method |
| CN103500765B (en) * | 2013-10-10 | 2016-01-13 | 中国科学院上海技术物理研究所 | Based on II class superlattice structure and the preparation method of arsenic threshold switch |
| CN105932106A (en) * | 2016-05-26 | 2016-09-07 | 中国科学院半导体研究所 | Manufacturing method for InAs/InSb/GaSb/InSb II-type superlattice material and product |
| CN107507877B (en) * | 2017-08-23 | 2019-03-15 | 苏州焜原光电有限公司 | A kind of middle long wave infrared region II class superlattices |
| CN107507877A (en) * | 2017-08-23 | 2017-12-22 | 苏州焜原光电有限公司 | A kind of middle long wave infrared region II class superlattices |
| CN108133970A (en) * | 2017-11-02 | 2018-06-08 | 武汉高芯科技有限公司 | A kind of InAs/GaSb superlattices infrared detector and preparation method thereof |
| CN108648987A (en) * | 2018-03-26 | 2018-10-12 | 中国科学院半导体研究所 | A kind of optimization method at molecular beam epitaxial growth LONG WAVE INFRARED superlattices interface |
| CN108417663A (en) * | 2018-04-10 | 2018-08-17 | 中国科学院上海技术物理研究所 | It is a kind of to be used for measuring the device architecture that super crystal lattice material lacks sub- lateral diffusion length |
| CN108417663B (en) * | 2018-04-10 | 2023-11-07 | 中国科学院上海技术物理研究所 | Device structure for measuring lateral diffusion length of minority carriers of superlattice material |
| CN109461786A (en) * | 2018-09-20 | 2019-03-12 | 中国科学院半导体研究所 | Binary channels Long Wave Infrared Probe |
| CN114284394A (en) * | 2022-03-04 | 2022-04-05 | 武汉高芯科技有限公司 | Growth method of superlattice detector material and superlattice infrared detector |
| CN115824416A (en) * | 2023-02-14 | 2023-03-21 | 太原国科半导体光电研究院有限公司 | Secondary superlattice infrared detector based on intelligent control |
| CN115824416B (en) * | 2023-02-14 | 2023-04-14 | 太原国科半导体光电研究院有限公司 | Second-class superlattice infrared detector based on intelligent control |
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Application publication date: 20120704 |