CN101527311B - 图像感测装置和成像系统 - Google Patents

图像感测装置和成像系统 Download PDF

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Publication number
CN101527311B
CN101527311B CN2009100079722A CN200910007972A CN101527311B CN 101527311 B CN101527311 B CN 101527311B CN 2009100079722 A CN2009100079722 A CN 2009100079722A CN 200910007972 A CN200910007972 A CN 200910007972A CN 101527311 B CN101527311 B CN 101527311B
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China
Prior art keywords
pixel
image sensing
photoelectric conversion
semiconductor region
conversion unit
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Expired - Fee Related
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CN2009100079722A
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English (en)
Chinese (zh)
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CN101527311A (zh
Inventor
饭田聪子
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Canon Inc
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Canon Inc
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Publication of CN101527311A publication Critical patent/CN101527311A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1534—Interline transfer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN2009100079722A 2008-03-06 2009-03-06 图像感测装置和成像系统 Expired - Fee Related CN101527311B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008056625 2008-03-06
JP2008-056625 2008-03-06
JP2008056625A JP5173496B2 (ja) 2008-03-06 2008-03-06 撮像装置及び撮像システム

Publications (2)

Publication Number Publication Date
CN101527311A CN101527311A (zh) 2009-09-09
CN101527311B true CN101527311B (zh) 2011-04-13

Family

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Family Applications (1)

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CN2009100079722A Expired - Fee Related CN101527311B (zh) 2008-03-06 2009-03-06 图像感测装置和成像系统

Country Status (3)

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US (1) US7812382B2 (https=)
JP (1) JP5173496B2 (https=)
CN (1) CN101527311B (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010239001A (ja) 2009-03-31 2010-10-21 Sony Corp 容量素子とその製造方法および固体撮像装置と撮像装置
JP5585232B2 (ja) 2010-06-18 2014-09-10 ソニー株式会社 固体撮像装置、電子機器
JP2013004635A (ja) * 2011-06-14 2013-01-07 Canon Inc 撮像素子、撮像装置、及び、形成方法
JP6141024B2 (ja) 2012-02-10 2017-06-07 キヤノン株式会社 撮像装置および撮像システム
JP5956840B2 (ja) 2012-06-20 2016-07-27 キヤノン株式会社 固体撮像装置及びカメラ
WO2014087807A1 (ja) * 2012-12-05 2014-06-12 富士フイルム株式会社 撮像装置、異常斜め入射光検出方法及びプログラム、並びに記録媒体
JP5749409B2 (ja) * 2012-12-07 2015-07-15 富士フイルム株式会社 撮像装置、画像処理方法及びプログラム
CN104995912B (zh) * 2013-03-05 2017-03-08 富士胶片株式会社 摄像装置、图像处理装置及图像处理方法
JP6448289B2 (ja) * 2014-10-07 2019-01-09 キヤノン株式会社 撮像装置及び撮像システム
WO2016103430A1 (ja) * 2014-12-25 2016-06-30 キヤノン株式会社 ラインセンサ、画像読取装置、画像形成装置
WO2016114154A1 (ja) 2015-01-13 2016-07-21 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
KR102720685B1 (ko) * 2019-06-10 2024-10-22 삼성전자주식회사 Af 픽셀을 포함하는 이미지 센서
KR102950629B1 (ko) * 2020-11-10 2026-04-13 삼성전자주식회사 이미지 센서

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4708583B2 (ja) * 2001-02-21 2011-06-22 キヤノン株式会社 撮像装置
JP2002320141A (ja) * 2001-04-20 2002-10-31 Canon Inc 固体撮像装置および撮像方法
JP4759886B2 (ja) 2001-09-03 2011-08-31 ソニー株式会社 固体撮像装置
JP4221940B2 (ja) 2002-03-13 2009-02-12 ソニー株式会社 固体撮像素子及び固体撮像装置並びに撮像システム
US6838715B1 (en) * 2002-04-30 2005-01-04 Ess Technology, Inc. CMOS image sensor arrangement with reduced pixel light shadowing
JP2004165462A (ja) * 2002-11-14 2004-06-10 Sony Corp 固体撮像素子及びその製造方法
JP2006073885A (ja) * 2004-09-03 2006-03-16 Canon Inc 固体撮像装置、その製造方法、およびデジタルカメラ
JP4718875B2 (ja) * 2005-03-31 2011-07-06 株式会社東芝 固体撮像素子
US7432491B2 (en) * 2005-05-06 2008-10-07 Micron Technology, Inc. Pixel with spatially varying sensor positions
TWI310987B (en) * 2005-07-09 2009-06-11 Samsung Electronics Co Ltd Image sensors including active pixel sensor arrays
JP2007189129A (ja) 2006-01-16 2007-07-26 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
JP2007227474A (ja) * 2006-02-21 2007-09-06 Matsushita Electric Ind Co Ltd 固体撮像装置
US20080211050A1 (en) * 2007-03-01 2008-09-04 Hiok Nam Tay Image sensor with inter-pixel isolation
WO2009034623A1 (ja) * 2007-09-12 2009-03-19 Unisantis Electronics (Japan) Ltd. 固体撮像素子

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Publication number Publication date
JP5173496B2 (ja) 2013-04-03
US20090224346A1 (en) 2009-09-10
US7812382B2 (en) 2010-10-12
JP2009212465A (ja) 2009-09-17
CN101527311A (zh) 2009-09-09

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