CN101523621B - 光电子器件的壳体、光电子器件以及用于制造光电子器件的壳体的方法 - Google Patents

光电子器件的壳体、光电子器件以及用于制造光电子器件的壳体的方法 Download PDF

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Publication number
CN101523621B
CN101523621B CN2007800362142A CN200780036214A CN101523621B CN 101523621 B CN101523621 B CN 101523621B CN 2007800362142 A CN2007800362142 A CN 2007800362142A CN 200780036214 A CN200780036214 A CN 200780036214A CN 101523621 B CN101523621 B CN 101523621B
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plastic
based body
plastic based
front side
optical function
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CN101523621A (zh
Inventor
乔治·伯格纳
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/50Encapsulations or containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • H10H20/856Reflecting means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/40Optical elements or arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/8506Containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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CN2007800362142A 2006-09-29 2007-09-27 光电子器件的壳体、光电子器件以及用于制造光电子器件的壳体的方法 Active CN101523621B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102006046678.0 2006-09-29
DE102006046678A DE102006046678A1 (de) 2006-09-29 2006-09-29 Gehäuse für ein optoelektronisches Bauelement, optoelektronisches Bauelement und Verfahren zum Herstellen eines Gehäuses für ein optoelektronisches Bauelement
PCT/DE2007/001750 WO2008040324A1 (de) 2006-09-29 2007-09-27 Gehäuse für ein optoelektronisches bauelement, optoelektronisches bauelement und verfahren zum herstellen eines gehäuses für ein optoelektronisches bauelement

Publications (2)

Publication Number Publication Date
CN101523621A CN101523621A (zh) 2009-09-02
CN101523621B true CN101523621B (zh) 2012-01-18

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CN2007800362142A Active CN101523621B (zh) 2006-09-29 2007-09-27 光电子器件的壳体、光电子器件以及用于制造光电子器件的壳体的方法

Country Status (8)

Country Link
US (2) US8071987B2 (https=)
EP (1) EP2057695B1 (https=)
JP (1) JP5340157B2 (https=)
KR (1) KR101444479B1 (https=)
CN (1) CN101523621B (https=)
DE (1) DE102006046678A1 (https=)
TW (1) TWI347679B (https=)
WO (1) WO2008040324A1 (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009055786A1 (de) * 2009-11-25 2011-05-26 Osram Opto Semiconductors Gmbh Gehäuse, optoelektronisches Bauteil und Verfahren zur Herstellung eines Gehäuses
DE102009058421A1 (de) * 2009-12-16 2011-06-22 OSRAM Opto Semiconductors GmbH, 93055 Verfahren zur Herstellung eines Gehäuses für ein optoelektronisches Halbleiterbauteil, Gehäuse und optoelektronisches Halbleiterbauteil
DE102010011428A1 (de) * 2010-03-15 2011-09-15 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102010029368B4 (de) 2010-05-27 2026-02-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Elektronische Anordnung
DE102010023815A1 (de) * 2010-06-15 2011-12-15 Osram Opto Semiconductors Gmbh Oberflächenmontierbares optoelektronisches Bauelement und Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Bauelements
DE102010025319B4 (de) 2010-06-28 2022-05-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines oberflächenmontierbaren Halbleiterbauelements und oberflächenmontierbare Halbleiterbauelemente
JP5488310B2 (ja) * 2010-07-30 2014-05-14 市光工業株式会社 車両用灯具の半導体型光源の光源ユニット、車両用灯具
DE102010054591B4 (de) * 2010-12-15 2023-03-30 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Gehäuse und Verfahren zur Herstellung eines Gehäuses für ein optoelektronisches Bauelement
KR101825473B1 (ko) * 2011-02-16 2018-02-05 삼성전자 주식회사 발광소자 패키지 및 그 제조방법
CN103171080A (zh) * 2011-12-21 2013-06-26 顺德工业股份有限公司 发光装置封装支架的制造方法
US10222032B2 (en) 2012-03-30 2019-03-05 Cree, Inc. Light emitter components and methods having improved electrical contacts
US10134961B2 (en) * 2012-03-30 2018-11-20 Cree, Inc. Submount based surface mount device (SMD) light emitter components and methods
US9735198B2 (en) 2012-03-30 2017-08-15 Cree, Inc. Substrate based light emitter devices, components, and related methods
CN102779926B (zh) * 2012-08-02 2015-01-28 慧明光电(深圳)有限公司 高对比度的防水表贴led灯
JP6392654B2 (ja) * 2014-02-04 2018-09-19 エイブリック株式会社 光センサ装置
DE102014106882A1 (de) * 2014-05-15 2015-11-19 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
CN107251245A (zh) * 2015-02-25 2017-10-13 京瓷株式会社 发光元件搭载用封装体、发光装置以及发光模块
JP2017032471A (ja) * 2015-08-05 2017-02-09 株式会社デンソー 光センサ
US9865779B2 (en) 2015-09-30 2018-01-09 Nichia Corporation Methods of manufacturing the package and light-emitting device
JP6728764B2 (ja) * 2016-02-26 2020-07-22 日亜化学工業株式会社 発光装置及びそれを用いた照明装置
CN105575921A (zh) * 2016-02-29 2016-05-11 卓广实业(上海)有限公司 垂直导热封装结构的ic元件
EP3684582A1 (en) * 2017-09-19 2020-07-29 Lumileds Holding B.V. Light emitting device and manufacturing method thereof
JP6658808B2 (ja) * 2017-12-25 2020-03-04 日亜化学工業株式会社 発光装置および発光装置の製造方法
JP7212241B2 (ja) 2018-06-21 2023-01-25 日亜化学工業株式会社 発光装置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2150409T3 (es) * 1989-05-31 2000-12-01 Osram Opto Semiconductors Gmbh Procedimiento para montar un opto-componente que se puede montar sobre una superficie.
US5291038A (en) * 1990-12-19 1994-03-01 Sharp Kabushiki Kaisha Reflective type photointerrupter
JP2714272B2 (ja) * 1991-06-04 1998-02-16 シャープ株式会社 電子部品
DE59402033D1 (de) * 1993-09-30 1997-04-17 Siemens Ag Zweipoliges SMT-Miniatur-Gehäuse für Halbleiterbauelemente und Verfahren zu dessen Herstellung
DE19638667C2 (de) 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
EP1004145B1 (de) * 1997-07-29 2005-06-01 Osram Opto Semiconductors GmbH Optoelektronisches bauelement
DE19829197C2 (de) * 1998-06-30 2002-06-20 Siemens Ag Strahlungsaussendendes und/oder -empfangendes Bauelement
JP2000101149A (ja) * 1998-09-25 2000-04-07 Rohm Co Ltd 半導体発光素子
DE10020465A1 (de) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement
JP4066620B2 (ja) * 2000-07-21 2008-03-26 日亜化学工業株式会社 発光素子、および発光素子を配置した表示装置ならびに表示装置の製造方法
DE10117889A1 (de) * 2001-04-10 2002-10-24 Osram Opto Semiconductors Gmbh Leiterrahmen und Gehäuse für ein strahlungsemittierendes Bauelement, strahlungsemittierendes Bauelement sowie Verfahren zu dessen Herstellung
JP3844196B2 (ja) 2001-06-12 2006-11-08 シチズン電子株式会社 発光ダイオードの製造方法
WO2003034508A1 (fr) * 2001-10-12 2003-04-24 Nichia Corporation Dispositif d'emission de lumiere et procede de fabrication de celui-ci
DE10153259A1 (de) 2001-10-31 2003-05-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
EP1597764A1 (de) * 2003-02-28 2005-11-23 Osram Opto Semiconductors GmbH Optoelektronisches bauteil mit strukturiert metallisiertem gehäusekörper, verfahren zur herstellung eines derartigen bauteils und verfahren zur strukturierten metallisierung eines kunststoff enthaltenden körpers
TW200427111A (en) 2003-03-12 2004-12-01 Shinetsu Chemical Co Material for coating/protecting light-emitting semiconductor and the light-emitting semiconductor device
US8586158B2 (en) * 2003-05-14 2013-11-19 Toyo Seikan Kaisha, Ltd. Decorated plastic package
JP4357886B2 (ja) 2003-06-30 2009-11-04 Tdk株式会社 脱バインダ用治具および電子部品の製造方法
US20050196710A1 (en) * 2004-03-04 2005-09-08 Semiconductor Energy Laboratory Co., Ltd. Method for forming pattern, thin film transistor, display device and method for manufacturing the same, and television apparatus
JP4747726B2 (ja) * 2004-09-09 2011-08-17 豊田合成株式会社 発光装置
DE102004045950A1 (de) 2004-09-22 2006-03-30 Osram Opto Semiconductors Gmbh Gehäuse für ein optoelektronisches Bauelement, optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
JP2006186297A (ja) 2004-12-03 2006-07-13 Toshiba Corp 半導体発光装置及びその製造方法
US7932499B2 (en) * 2006-03-13 2011-04-26 Hitachi Metals, Ltd. Radiation detector and method for producing the same
WO2007135707A1 (ja) * 2006-05-18 2007-11-29 Nichia Corporation 樹脂成形体及び表面実装型発光装置並びにそれらの製造方法

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Publication number Publication date
US8476114B2 (en) 2013-07-02
WO2008040324A1 (de) 2008-04-10
CN101523621A (zh) 2009-09-02
JP5340157B2 (ja) 2013-11-13
TWI347679B (en) 2011-08-21
KR101444479B1 (ko) 2014-09-25
US8071987B2 (en) 2011-12-06
TW200830560A (en) 2008-07-16
DE102006046678A1 (de) 2008-04-03
US20090218584A1 (en) 2009-09-03
KR20090075806A (ko) 2009-07-09
JP2010505254A (ja) 2010-02-18
US20120032362A1 (en) 2012-02-09
EP2057695A1 (de) 2009-05-13
EP2057695B1 (de) 2018-08-15

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