CN101504910B - Processing apparatus - Google Patents

Abstract

The invention provides a processing apparatus, which can increase in-plane uniformity and inhibit particles from adhering to a treated object when processing gas in a processing container is flowed to treat the treated object. A carrying bench of the processing apparatus is arranged in the processing container for carrying the treated object; and a processing gas supply unit is used for supplying processing gas from the upper side of the carrying bench to treat the treated object on the carrying bench. A gas discharging part is used for discharging gas in the processing container from periphery of the carrying bench; air-flow leading elements are arranged on periphery part of the carrying bench along circumference direction of the carrying bench for leading air flow outwards with the periphery part.

Description

Processing unit

Technical field

The present invention relates in container handling, for example supply with and handle gas, utilize this processing gas above-mentioned handled object to be carried out the technology of predetermined processing to the handled objects such as glass substrate of FPD (flat-panel monitor) usefulness.

Background technology

At LCD (Liquid Crystal Display: LCD) in the manufacturing process of the glass substrate of usefulness etc., have and implement the operation of etch processes to being formed at aluminium (Al) film on the glass substrate.Simply an example of the etch processes device that carries out this operation is described according to Figure 27; Label 1 among the figure is a vacuum chamber; The set inside of this vacuum chamber 1 be useful on carry the for example FPD substrate S that puts as handled object (below; Abbreviate substrate S as) carry and to put platform 11, and with put platform 11 relative modes this year and be provided with processing gas supply part 12 as upper electrode.Supply with for example by chlorine (Cl in vacuum chamber 1 from handling gas supply part 12 ₂) etching gas that constitutes of type gas; Via exhaust flow path 13 through scheming unshowned vacuum pump to vacuumizing in the vacuum chamber 1; On the other hand; Apply RF power through putting platform 11 from high frequency electric source 14 to above-mentioned year, the space above substrate S forms the plasma of etching gas, implements thus substrate S is carried out etched etch processes.

Yet; In the etching of Al film; Because feed speed control (rate controlling), be that quantity delivered and the etch quantity of etching gas is proportional, thus because of the etching speed of the circumference of load effect (LoadingEffect) substrate S very fast, the too much phenomenon of generation etch quantity.That is, the circumference of the substrate S shown in the label 15 in Figure 28 produces the Cl free radical as etchant; Compare with the central portion of being represented by label 16 of the same area, the etching area is only about half of, therefore; If the flow with identical with the flow of supplying with to middle section 16 is supplied with etching gas; Then in circumference 15, compare with middle section 16, etch quantity is about twice.

Therefore, in the prior art, take following countermeasure; Promptly; For example shown in Figure 27 and Figure 29 (a), being provided with the mode on every side of surrounding substrate S highly is the rectification part 17 about 50mm～150mm, thus; Utilize rectification part 17 to block near flowing of the etching gas circumference of substrate S, around substrate S, form gas hold-up.Therefore, the flow velocity of the etching gas in this zone is reduced, improve the uniformity of the etching speed in the real estate.

At this moment; With take out of mouthfuls 10 from moving on the side wall portion that is arranged on vacuum chamber 1 and compare to the conveyance height and position that carries the substrate S till the upper side of putting platform 11; Under the side's condition with higher of the upper end of rectification part 17, substrate S in the conveyance process and rectification part 17 interferences.Therefore; For example shown in Figure 29 (b), rectification part 17 is constituted can free lifting, and rectification part 17 is put under the state that platform 11 rises from carrying; Move into substrate S through carrying the gap of putting between platform 11 and the rectification part 17; Substrate S carried to place to carry this rectification part 17 is descended after putting on the platform 11, on the other hand, when taking out of, make rectification part 17 put platform 11 and take out of substrate S through above-mentioned gap after rising from carrying.

Here, rectification part 17 for example forms frame set through making up 4 sheet materials 171, and the mode of surrounding substrate S with this frame set is carried to put carrying and put on the platform 11.For example, to be provided with protuberance 172 to carrying the mode of the outside of putting platform 11 stretching out, the support stick 181 of the following and up-down usefulness of each protuberance 172 is connected in the side of each plate member 171.Can make these support sticks 181 go up and down to make rectification part 17 integral elevatings through utilizing elevating mechanism 18.

Yet,, generate the chloride of Al, on the inwall of this chloride attached to rectification part 17 utilizing in the etch processes that chlorine class gas carries out of Al film.If the muriatic accumulating amount that adheres to is too much, then rectification part 17 is easy to chloride is peeled off when going up and down etc., becomes the main cause that produces particle, and the maintenance that therefore must be used to remove deposit is continually handled.

Safeguard processing operation for this, the atmosphere in the vacuum chamber 1 is returned to after the atmospheric condition, beat this chamber 1 and carry out the operation of removing of deposit, then after closing chamber 1, carry out the so-called operation that vacuumizes.Yet in recent years along with the development of the maximization of substrate S, vacuum chamber 1 maximization that also becomes makes atmosphere in the vacuum chamber 1 return to the operation of atmospheric condition, the operation that vacuumizes all needs considerable time.Thus, cause the whole activity duration of upkeep operation to become very long, become the one of the main reasons that hinders the production efficiency raising so carry out upkeep operation continually.

In order to address this problem, the inventor develops the generation that suppresses particle through the rectification part that does not use above-mentioned lifting type, and suppresses the etch processes device of the generation of load effect.Wherein, As the prior art relevant with rectification part; In patent documentation 1, record following structure: be provided with can be through transfer mechanism outstanding movable type on lower electrode ring as rectification part; In patent documentation 2, record following structure: with the sidewall that provides the gas stream port structure as rectification part; In patent documentation 3, record following structure: constitute the example of rectification parts through a plurality of side wall portions that are provided with along the periphery of substrate, still, in any one document; All only be not drive rectification part substrate-placing is put the structure on the platform in carrying, all can not address the above problem according to any technology of putting down in writing in these documents.

Patent documentation 1: japanese kokai publication hei 7-74155 communique, the 0009th section, Fig. 1

Patent documentation 2: TOHKEMY 2003-243364 communique, the 0014th section, Fig. 1

Patent documentation 3: TOHKEMY 2005-259989 communique, the 0029th section, Fig. 1

Summary of the invention

The present invention proposes in view of the above problems; Its purpose is to provide a kind of processing unit; When the processing gas flow is handled handled object, the inner evenness of processing is improved, and can suppress particle adhering to handled object.

Processing unit of the present invention is characterized in that, comprising:

Be arranged on the inside of container handling, be used for carrying and put carrying of handled object and put platform;

Be used for putting the upper side supply processing gas of platform, put the processing gas feed unit that the handled object on the platform is handled this year carrying to place from this year;

Be used for putting the gas exhaust portion that the gas in the container handling is carried out exhaust on every side of platform from said year; With

The Zhou Fangxiang that puts platform along this year is arranged on the top of putting the circumference of platform in said year, and this circumference between the air-flow guiding parts of steering current laterally.

For example said air-flow guiding parts may be thought of as tabular endless member and has and the situation of putting the corresponding peristome of outer shape of the handled object on the platform in said year; Be embedded in the situation of the parts in the space of top of the circumference of putting platform in said year, extend out to the situation etc. of internal face of said container handling of the top of the circumference of putting platform in said year.In addition, the interior ora terminalis of said air-flow guiding parts perhaps is positioned at from the top position of the external end edge of said handled object along horizontal direction and departs from ± scope of the position of 10mm preferably than the top position of the external end edge of said handled object.

In addition; The position that also can corresponding put the Zhou Fangxiang of platform in said year makes the height of said air-flow guiding parts different; So that the processing speed of utilizing said processing gas treatment handled object with respect to the direction homogenizing along the periphery of this handled object, also can make said air-flow guiding parts part outstanding to the inside or caved in laterally in this air-flow guiding parts part.In addition, also can be to surround the rectification part that the mode of putting the handled object on the platform in said year is provided with, the top surface than this handled object of this rectification part is high.

In addition; At above-mentioned processing unit; Also can comprise the elevating mechanism that said air-flow guiding parts is gone up and down, at this moment, it is different between during with conveyance when the processing of handled object that preferred said air-flow guiding parts is controlled as its height; Airflow limitation portion is set on the air-flow guiding parts; Make the gap of taking out of between the mouth through moving on this air-flow guiding parts and the sidewall that is arranged on container handling for the gas that suppresses upper side when the processing of handled object downwards side through and covering moving into of handled object and take out of mouth, on the other hand, when the conveyance of handled object, take out of a mouthful adjoining position and keep out of the way from moving into this.Also can control, make in said air-flow guiding parts, make at least to drop to when the conveyance of handled object in abutting connection with the position that moving into of said handled object taken out of mouthful to move into and take out of a mouthful low position than this.Preferred said air-flow guiding parts is separated by parts side wall portion that is arranged on said container handling, that take out of mouthful adjacency with moving into of handled object and with these parts and another parts of forming constitute, and said elevating mechanism can make these parts and another parts independently go up and down.

When the air-flow guiding parts has elevating mechanism, preferably further be provided for storing the storage part of the data relevant with the height and position of the treatment conditions of handled object and said air-flow guiding parts; Control part with the said elevating mechanism of control makes it possible to regulate the height and position of air-flow guiding parts according to the data of reading based on reading the data that are stored in the said storage part according to selected treatment conditions.

Processing to said handled object carries out can have been enumerated, and is formed at the lip-deep situation that contains the etch processes that is selected from least a film in aluminium film, aluminium alloy film, titanium film and the titanium alloy film of handled object etc.

According to the present invention; Just supply with from it and handle gas and handle for carrying the handled object put on the platform; Carry the circumference put platform above put the circumferential gas-flow configuration guiding parts of platform along this year, and this circumference between to foreign side's steering current, from carry put platform around carry out exhaust.Therefore, the unreacted processing gas that does not arrive handled object is discharged from said air-flow, and this processing gas is difficult to spread to carrying the circumference of putting the handled object on the platform, therefore, can suppress the generation of load, improves the inner evenness of handling.

In addition, as the method that suppresses load,,, suppress the pollution of handled object etc. so can reduce possibility along with the lifting action particle generation of rectification part because do not adopt the rectification part of employed lifting type in the prior art.Thus, can reduce the frequency of the maintenance that needs the long period, improve the productivity ratio of processing unit, thereby realize the raising of production efficiency.

Description of drawings

Fig. 1 is the longitudinal section of the structure of the related etch processes device of expression execution mode of the present invention.

Fig. 2 is the stereogram of the inner structure of the container handling of the above-mentioned etch processes device of expression.

Fig. 3 is the plane graph of the inner structure of the above-mentioned container handling of expression.

Fig. 4 is the amplification longitudinal section of the inner structure of the above-mentioned container handling of expression.

Fig. 5 is second plane graph of the inner structure of the above-mentioned container handling of expression.

Fig. 6 is arranged on the amplification longitudinal section of the variation of the buffer board in the above-mentioned container handling for expression.

Fig. 7 is the longitudinal section of the effect of the above-mentioned etch processes device of expression.

Fig. 8 is arranged on the amplification longitudinal section of the effect of the inner air-flow guiding parts of above-mentioned container handling for expression.

Fig. 9 is arranged on the amplification longitudinal section of the effect of the inner rectification part of above-mentioned container handling for expression.

Figure 10 is the amplification longitudinal section of other execution mode of expression said flow guiding parts.

Figure 11 is the amplification longitudinal section of another execution mode of expression said flow guiding parts.

Figure 12 is the longitudinal section of the related etch processes device of another execution mode of expression.

Figure 13 is the stereogram of the inner structure of the container handling of above-mentioned another etch processes device of expression.

Figure 14 is the block diagram of the electrical structure of above-mentioned another etch processes device of expression.

Figure 15 is first key diagram of the effect of above-mentioned another etch processes device of expression.

Figure 16 is second key diagram of the effect of above-mentioned another etch processes device of expression.

Figure 17 is the result's who flows of the etching gas in the expression simulation process container key diagram.

Figure 18 is the result's of the Fluid Volume (flux) of the above-mentioned etching gas of expression simulation key diagram.

Figure 19 is the result's of the above-mentioned Fluid Volume of expression simulation second key diagram.

Figure 20 is the plane graph of substrate that is illustrated in the numerical value of the etching speed that measures in the etch processes test.

Figure 21 is the plane graph of the result's of expression first etch processes test substrate.

Figure 22 is the result's of expression second etch processes test key diagram.

Figure 23 is the key diagram of expression the 3rd etch processes result of experiment.

Figure 24 is the result's of expression the 4th etch processes test key diagram.

Figure 25 is the result's of expression the 5th etch processes test key diagram.

Figure 26 is the result's of above-mentioned the 5th Processing Test the related key diagram of investigation.

Figure 27 is the longitudinal section of the structure of the existing etch processes device of expression.

Figure 28 utilizes the plane graph of the substrate of above-mentioned existing etch processes apparatus processes for expression.

Figure 29 is the stereogram of the inner structure of the container handling of the above-mentioned existing etch processes device of expression.

Figure 30 is the longitudinal section of the effect of the existing etch processes device of expression.

Label declaration

S:FPD substrate (substrate)

2: the etch processes device

3: carry and put platform

4: upper electrode

5,5a, 5b: air-flow guiding parts

6: gas flow path

7: control part

20: container handling

21: side wall portion

22: move into and take out of mouth

23: the family of power and influence

24: exhaust flow path

32: insulating element

33: shading ring

34: lifter pin

35: elevating mechanism

40: the gas spray head

41: the upper electrode matrix

42: the gaseous diffusion space

43: handle gas and supply with stream

44: handle gas supply part

45: the gas supply hole

51,51a, 52,52a: sheet material

53: buffer board

54: rectification part

311: the first high frequency electric source portions

312: the second high frequency electric source portions

501: peristome

Embodiment

Before the concrete structure of the etch processes device related to this execution mode described, the principle to the generation that suppresses load described simply.As explaining in the background technology, load effect is appreciated that to respect to the etching gas that is supplied to it only is half the phenomenon that produces that the area of the circumference of substrate S is compared with the area of the center side of substrate S.

When the inventor does not use the rectification part of lifting type to suppress load technological in exploitation; State to the etch processes device is inner is simulated, and the CONCENTRATION DISTRIBUTION of the mobile and conduct of etching gas being handled the etchant (etchant) of composition studies in great detail.The result of research shows, the generation of load receives the influence of concentration of etchant of circumference of substrate S bigger.

For example, shown in figure 30, the understanding content that the etch processes device that uses the rectification part 17 that load inhibition usefulness is not set is obtained describes.From handling flowing of etching gas that gas supply part 12 supplies with; As the streamline model among Figure 30 was represented, expansion descended in vacuum chamber 1, arrived after the substrate; Transmit on the surface of substrate S and, finally discharge from exhaust line 13 through carrying the side of putting platform 11 to circumference one side flow.

Yet; In the gas in being supplied to vacuum chamber 1; For example, as the etching gas of supplying with from the outer distolateral supply hole of handling gas supply part 12, through do not arrive substrate S via near the of the side wall portion of vacuum chamber 1; Therefore, exist etchant not have the air-flow that consumes and keep the high concentration state to be discharged from.Like this, if vacuum chamber 1 in formation etchant concentration different zone, then these concentration differences become actuating force and cause etchant to spread to substrate S one side (zone that concentration is low) from side wall portion one side (zone that concentration is high) of vacuum chamber 1.

In addition, after the supply of handling gas supply part 12, because the free air space of gas is sharply expanded in vacuum chamber 1, so the velocity ratio of the etching gas that in vacuum chamber 1, flows is less.Therefore, the etchant from the diffusion of side wall portion one side direction substrate S one side counters to the flowing of etching gas of discharging to exhaust flow path 13 from substrate S surface and arrives substrate S.Its result, the middle section 16 on substrate S surface compares with circumference 15, and the concentration of the etchant of circumference 15 1 sides is high, can confirm to promote load effect owing to this etchant concentration difference.

The related etch processes device of this execution mode is the device according to the exploitation of above-mentioned understanding content, has the structure that can suppress from the diffusion of the etchant of the side wall portion side direction substrate S side of vacuum chamber.Below, with reference to Fig. 1～Fig. 5 the structure of the related etch processes device 2 of this execution mode is described.

The etch processes device 2 that the longitudinal section of Fig. 1 is represented has and for example carries out the function of etch processes as the lip-deep aluminium of substrate S (Al) film of FPD substrate to being formed at handled object.Etch processes device 2 has the portion within it of being used for substrate S is implemented the container handling 20 as vacuum chamber of etch processes, and this container handling 20 for example forms flat shape and is tetragonal shape.In addition, container handling 20 ground connection.

Aforesaid substrate S is the substrate of dihedral (polygon), is 3.5m one side container handling 20 constitutes horizontal cross-section for example, and another side is the size about 3.0m, and in addition, for example the good material of heat conductivity by aluminium etc. constitutes.Be formed with to be used for substrate S moved at a side wall portion 21 of container handling 20 and take out of moving in the container handling 20 and take out of mouthfuls 22, this is moved into and takes out of mouthfuls 22 and constitute and can pass through the family of power and influence's 23 freely openables.

In the inside of container handling 20, dispose to be used for carrying in the above and put carrying of substrate S and put platform 3.Carry and to put the first high frequency electric source portion 311 that platform 3 and plasma generation use and the second high frequency electric source portion 312 of the introducing of the ion in plasma usefulness is electrically connected; Play in this container handling 20, producing plasma, the ion in this plasma is incorporated into the effect on substrate S surface.Carry and to put platform 3 and be arranged on via insulating element 32 on the bottom surface of container handling 20, thus, putting platform 3 as carrying of lower electrode becomes from the state of container handling 20 electricity floating (electricity is free).In addition, carry insulation division and the side put platform 3 surfaces, in order to be formed uniformly plasma above the platform 3 and by 33 coverings of the shading ring that constitutes through ceramic material (shield ring) carrying to put.

And, carry and to put platform 3 and be provided with and be used at the carrying device of the outside of the unshowned etch processes device 2 of figure and put the lifter pin 34 of the handing-over of carrying out substrate S between the platform 3 this year.Lifter pin 34 constitutes and utilizes the lifter plate 36 is connected with elevating mechanism 35 to return from carrying surperficial freely the stretching out of putting platform 3, can and the conveyance unit of outside between carry out the handing-over of substrate S position and being arranged on carry the surface of putting platform 3, carry year putting of the handled object of putting substrate S and make substrate S up-down between the zone.The part that connects container handling 20 at lifter pin 34 is provided with bellows 37; This bellows 37 covers lifter pin 34 under the state between bottom surface that is connected in this container handling 20 and the lifter plate 36, play the effect of keeping the air-tightness (gas tightness) in the container handling 20.

On the other hand, inner the carrying of container handling 20 put platform 3 above, to be provided with flat upper electrode 4 with the surperficial relative mode of putting platform 3 this year, this upper electrode 4 is supported on the upper electrode matrix 41 of gusset shape.This upper electrode 4 and upper electrode matrix 41 for example are made up of aluminium.In addition; The top of the top and container handling 20 of upper electrode matrix 41 is connected; Thus, upper electrode 4 with state that container handling 20 conducts under be connected with it, and constitute the gaseous diffusion space 42 of etching gas through the space that upper electrode matrix 41 and upper electrode 4 surround.Below, upper electrode 4, upper electrode matrix 41 etc. is referred to as gas spray head 40.

In addition, at the top of container handling 20, handle gas supply stream 43 to be provided with above-mentioned gas diffusion space 42 ways of connecting, this other end one side of handling gas supply stream 43 is connected with processing gas supply part 44.In this example, constitute processing gas feed unit by upper electrode 4 and upper electrode matrix 41.If supply with etching gass from handling gas supply part 44 to gaseous diffusion space 42, then this etching gas is fed into the processing space above the substrate S via being arranged on the gas supply hole 45 on the upper electrode 4, carries out the etch processes to substrate S thus.On the other hand, distolateral a connection of the diapire of container handling 20 and the exhaust flow path 24 that constitutes gas exhaust portion, another of this exhaust flow path 24 is distolateral for example to be connected with the unshowned vacuum pump of figure.Exhaust flow path 24, for example as shown in Figure 5, the outside in the substantial middle position of carrying each limit of putting platform 3 is configured in total everywhere.

Through having above structure, etch processes device 2 constitutes the plasma-etching apparatus of bottom double frequency type, can make the etching gas plasmaization that supplies in the container handling 20 carry out the etching of substrate S.The related etch processes device 2 of this execution mode also has the structure of the generation that is used to suppress the load effect that causes because of the diffusion from the etchant of side wall portion one side.Below, this content is elaborated.

Carry above the circumference put platform 3, for example shading ring 33 above position configuration have by pottery for example, quartzy, for example form yttrium (Y on through the aluminium of alumina processing or these parts ₂O ₃) the air-flow guiding parts 5 that waits sprayed sheet material to constitute.Air-flow guiding parts 5 for example shown in the stereogram of Fig. 2, through combination for example 4 sheet materials 51,52 form " square shape ", thus, form to have and be used to make etching gas to the logical peristome 501 of substrate S effluent.In addition; For air-flow guiding parts 5; Carry out moving into of substrate S and take out of in order and to carry the space put between the platform 3 via these parts 5; With its bottom surface be positioned at be arranged on moving on the side wall portion 21 take out of mouthfuls 22 for example directly over mode, the external end edge of each sheet material 51,52 is fixed on the sidewall of side wall portion 21.

The size of the peristome 501 of this execution mode for example; Shown in the plane graph of Fig. 3; Constitute than the size of carrying the big circle of the substrate S put on the platform 3 or than the size of its little circle, can stop the flowing of supplying with from gas supply hole 45 of etching gas hardly and can make its arrival substrate S.

Here; With reference to Fig. 4 to air-flow guiding parts 5 with carry the position relation of putting the substrate S on the platform 3 and be elaborated, for from the horizontal direction of the interior ora terminalis of external end edge to the air-flow guiding parts 5 of substrate S apart from a, be the reference position with the external end edge of substrate S; Lateral direction with substrate S is a positive direction; For example be positioned at the scope of " 50mm≤a≤+ 50mm ", be preferably placed in the scope of " 10mm≤a≤+ 10mm " for example " a=+5mm ".Here, be that negative sign is expressed as apart from a, to observe from upper face side, air-flow guiding parts 5 is side-prominent and overlap staggered to substrate S one.In addition, be a=+5mm in the present example, the interior ora terminalis of guiding parts 5 is compared with the top position of the external end edge of substrate S and is positioned at the more lateral, when being stripped from attached to the particle on the guiding parts 5, can avoid these particles to drop on substrate S surface as far as possible.

In addition, to the distance b of the short transverse of the bottom surface of air-flow guiding parts 5, the scope that for example is positioned at " 10mm≤b≤200mm " is b=110mm for example above substrate S.

But, as after shown in the result of the test stated, this peristome 501 is of a size of the parameter of the etching speed of regulating substrate S, so this size does not limit the data shown in this example.For example, according to the result of simulation and the pilot study of design phase, select suitable, suitable size with the mode of the inner evenness that can improve etch processes.

Through air-flow guiding parts 5 is set, in the bottom surface of these parts 5 with carry and form gas flow path 6 between putting above the platform 3, be fed in the container handling 20 etching gass through this gas flow path 6 and by row to exhaust flow path 24.

Put the side of platform 3 (shading ring 33) and the space between the side wall portion 21 carrying of gas flow path 6 downstream, as shown in Figure 1, be provided with the for example surperficial buffer board 53 that constitutes by the parts of processing through the aluminium of alumina processing as sheet material.Like plane graph shown in Figure 5 as the state that sheds air-flow guiding parts 5; Buffer board 53 is configured to interdict the front of peristome of the exhaust flow path 24 of the bottom surface that is arranged at container handling 20 in the outside of carrying four limits put platform 3, the pressure loss that plays adjustments of gas stream 6 makes along the effect of the etching speed homogenizing of the direction of the periphery of substrate S.

Here, the structure of buffer board 53 is not limited to above-mentioned example, and is for example as shown in Figure 6, also can two buffer board 53a arranged side by side up and down, 53b.In example shown in Figure 6; The buffer board 53a of epimere side is made up of the punched-plate that its whole face is provided with punching; Cover to carry by this buffer board 53a and to put the side of platform 3 and the space between the side wall portion 21, on the other hand, on the buffer board 53b of hypomere side, punching is not set; Identical with example shown in Figure 5, with the mode of the front of the peristome that covers exhaust flow path 24 this buffer board 53b is configured.

And, related the carrying of this execution mode put carrying of substrate S in the platform 3 put the zone around, be provided with the rectification part 54 of fixed.Rectification part 54 is for example like Fig. 2, shown in Figure 5, for surrounding the framework of carrying " square shape " of putting the substrate S on the platform 3, is configured in to carry and puts on the platform 3 with the mode of putting the zone of carrying of surrounding substrate S.The internal face that this peristome constitutes rectification part 54 is positioned at distance and carries and put outside the external end edge that carries the substrate S that puts the zone is for example about 5mm.And, constitute the gap between rectification part 54 and the air-flow guiding parts 5, can be between it conveyance substrate S, and surface than substrate S is high above it, forms the height that surrounds substrate S and can around it, form gas hold-up, for example the height of 10mm.Rectification part 54 for example is made up of pottery, and Ra (arithmetic average roughness) is the rough surface about 5 μ m through making its surface for example become, and is difficult to peel off and can make attached to its surperficial attachment.

As shown in Figure 1, etch processes device 2 is connected with control part 7.Control part 7 for example is made up of the computer of unshowned CPU of having of figure and program; In program, be assembled with relevant with the effect of this etch processes device 2; Promptly; Handle in the container 20 with substrate S is moved into, carry the related relevant steps (order) such as control of action that the substrate S that puts on the platform 3 implements after the etch processes till take out of and organize carrying to place.This program for example is incorporated in the storage medium of hard disk, CD, magneto optical disk, storage card etc., and is installed in the computer through it.

Below, the action of the related etch processes device 2 of this execution mode is described.At first; Through scheming unshowned operating portion by the program scheme of user to the etch processes of control part 7 select targets; Afterwards, in control part 7,, thus substrate is implemented the etch processes of regulation based on the various piece output control signal of this program scheme to etch processes device 2.

Particularly, for example shown in Fig. 7 (a), at first open the family of power and influence 23, through the conveyance unit of scheming unshowned outside the substrate S that the surface is formed with the Al film is moved in the processing container 20, conveyance is extremely carried till the delivery position that carries the upper side of putting the zone of putting platform 3.Then, lifter pin 34 is risen, be handover to this lifter pin 34 from the conveyance unit with substrate S, lifter pin 34 is descended, substrate S is carried to place to carry put carrying on the platform 3 and put the zone at this delivery position.Having joined the conveyance unit of substrate S withdraws to container handling 20, and the family of power and influence 23 descends, and makes to move into to take out of mouthfuls 22 and close.

Then, shown in Fig. 7 (b), from handling for example chlorine class gas of etching gas that gas supply part 44 uses to substrate S ejection etch processes, and the inner space of container handling 20 is adjusted to the pressure of regulation.Then, put platform 3 supply high frequency electric power to carrying, to form plasma, to implement etch processes substrate S according to the key reaction shown in the following formula (1) in the space of the upper side of substrate S from first, second high frequency electric source portion 311,312.

3Cl ₂+2Al→Al ₂Cl ₆......(1)

At this moment, for example as shown in Figure 8, the etching gas of supplying with from gas spray head 40 descends in container handling 20 and arrives substrate S, carries out etch processes on its surface.Then, to the circumference side flow, air-flow is directed to the outside of shading ring 33 (carry and the put platform 3) gas flow path 6 of gentle conductance between parts 5 to etching gas when transmit on the surface of substrate S.

In addition, air-flow guiding parts 5 is through to put platform 3 side-prominent to carrying, and makes to observe the side of shading ring 33 and the space between the side wall portion 21 is kept off plug from spray head 40 sides.Therefore, gas supply hole 45 etching gass that supply with, that do not arrive the surface of substrate S for from the outboard end of gas spray head 40 can not flow directly into this space, but through air-flow guiding parts 5 change flow to after, inflow gas stream 6.

Gas flow path 6 and gas spray head 40 and carry the space of putting between the platform 3 and compare narrow and smallly, in addition, the whole etching gass that are supplied to container handling 20 all flow into this gas flow path 6, so the flow velocity that flow into the etching gas in the gas flow path 6 sharply rises.Here, the etchant in the plasma (giving etched spike) arrival substrate S gives etching thus and is consumed, and on the other hand, the unreacted etchant concentration that does not arrive substrate S keeps high concentration.Therefore, in the air-flow that flows into to gas flow path 6, form the concentration gradient of etchant, unreacted etchant is to the circumference diffusion of the low substrate S of concentration.But, because this air-flow laterally flow velocity in gas flow path 6 becomes big, thus unreacted etchant before arriving substrate S downstream effluent go.Its result in the related etch processes device 2 of this execution mode, can suppress the generation of load effect according to the diffusion of etchant.

Here, airflow flowing in gas flow path 6, near the position of its flow velocity peristome of exhaust flow path as shown in Figure 5 24 is different with the position away from this peristome, so etchant changes to the degree of the circumference diffusion of substrate S.Its result, near the position peristome for example, it is big that the etchant speed of the circumference of substrate S becomes, away from the position, the etchant speed of circumference diminishes, and has the uneven situation of etching speed along the direction of the periphery of substrate S.Therefore; That kind of using Fig. 5 to describe; The dead ahead of the peristome of the exhaust flow path 24 that relates at this execution mode is provided with the circumferential position adjustments that is used for according to substrate S flow into the air-flow of exhaust flow path 24 via gas flow path 6 the buffer board 53 of the pressure loss.Then, make the flow velocity homogenizing of airflow flowing in gas flow path 6, can access uniform etching speed through the effect of this buffer board 53.

Then, the effect to rectification part 54 describes.As after the result of the test stated said, under the situation that is provided with rectification part 54, compare with the situation that does not have to be provided with, the etching speed difference between substrate S central portion and the circumference diminishes, and can suppress the generation of load effect.Can infer as follows for this reason.The circumference of the substrate S that carries the inboard place rectification part 54 amplified observe and to know; As shown in Figure 9 from the etching gas in substrate S Surface runoff (plasma) of central side direction peripheral side; Temporarily conflict, along the Surface runoff of this rectification part 54 with the rectification part 54 on every side that is configured in substrate S.Thus, think etching gas, make the mobile generation of etching gas disorderly, thereby make the gas flow of etching gas of the circumference that is supplied to substrate S low, therefore can suppress the etching speed of this circumference through conflicting with rectification part 54.

That kind as described above; Through air-flow guiding parts 5, rectification part 54 are set and can suppress load effect; In addition, can roughly unify the central portion of substrate S and the etching speed of circumference, under the state of guaranteeing higher inner evenness, carry out the etch processes of Al film.Carry out the etch processes of stipulated time according to processing scheme after; The supply of gas, RF power stops etching; Make the pressure in the container handling 20 return to reset condition, then, substrate S is put platform 3 and is handover to outside conveyance unit from carrying according to order opposite when moving into; Take out of from etch processes device 2, finish a series of etch processes.

The etch processes device 2 related according to this execution mode can access following effect.Just supply with from it and handle gas and handle for carrying to put carrying the substrate S that puts on the platform 3; Along this year put platform 3 circumferentially carry the circumference of putting platform 3 above gas-flow configuration guiding parts 5; And this circumference between steering current laterally, from carry put platform 3 around discharge.Therefore, the unreacted processing gas of no show substrate S is discharged from said flow, and this processing gas becomes and is difficult to spread to carrying the circumference of putting the substrate S on the platform 3, therefore can suppress the generation of load effect, can improve inner evenness.

In addition, as the method that suppresses load effect,,, can suppress the pollution of substrate S etc. so the possibility that produces particle along with the lifting action of rectification part 54 reduces because do not use the rectification part 17 of lifting type used in the prior art.Thus, can reduce and carry out the frequency of the chloride of the long Al maintenance of removing of required time,, realize the raising of production efficiency so can improve the operating efficiency of etch processes device 2.

Wherein, the structure of air-flow guiding parts 5 does not receive the restriction of structure shown in the above-mentioned execution mode.For example, shown in Figure 10 (a), imbed the space of the top of carrying the circumference put platform 3, also can as air-flow guiding parts 5a with it by the parts of square ring shape.In addition, shown in Figure 10 (b), also can be through side wall portion 21 bendings that make container handling 20, make the internal face of this container handling 20 project to the top of carrying the circumference of putting platform 3, with this internal face as air-flow guiding parts 56.

In addition, as after shown in the analog result stated, from the horizontal direction of the interior ora terminalis of external end edge to the air-flow guiding parts 5 of substrate S apart from a, above substrate S to the distance b of the short transverse of the bottom surface of air-flow guiding parts for regulating the parameter of etching speed.Therefore, for example, shown in Figure 11 (a), the width that changes air-flow guiding parts 5c makes it outstanding to the inside partly, perhaps caves in laterally, changes also passable along circumferentially making of substrate S is said apart from a.In addition, shown in Figure 11 (b), make the height of air-flow guiding parts 5d different through the circumferential position according to substrate S, it is also passable to change above-mentioned distance b.According to these schemes, for example can make substrate S circumference etching speed with respect to along the direction homogenizing of the periphery of substrate S etc., regulate etching speed.Here, the adjusting of the width of air-flow guiding parts 5c, 5d, height is not limited to the continually varying situation shown in Figure 11 (a), Figure 11 (b), also can Discrete Change.In addition, no doubt about it also can change the width and height both sides of air-flow guiding parts.

In addition, preferably constitute between the internal face of external end edge and side wall portion 21 of sheet material 51,52 of air-flow guiding parts 5 fixing under the state that connects airtight, but in the slit that also can exist between these parts about for example several mm.When above-mentioned slit is compared with the peristome of having explained 501 very hour, all in peristome 501, flow and be discharged from because be supplied to the major part of the etching gas in the container handling 20, so can access the effect identical with above-mentioned execution mode.

In addition; Execution mode constitutes; With air-flow guiding parts 5 be configured in moving into of substrate S take out of mouthfuls 22 directly over, put platform 3 gentle conductances conveyance substrate S between parts 5 via carrying, but also can with air-flow guiding parts 5 be configured in move into take out of mouthfuls 22 under.At this moment, substrate S at the superjacent air space of air-flow guiding parts 5 by conveyance, when going up and down via peristome 501 and carry and put handing-over between the platform 3.

In addition, processing unit of the present invention is not limited to the etch processes of aluminium film, is applicable to metal film, the dielectric film of aluminium alloy, titanium, titanium alloy etc., etching or these stacked films of semiconductor film too.In addition, also can be applicable to for example ashing except that etch processes, CVD (chemical vapour deposition (CVD)) etc., use other to handle the processing that gas is handled handled object.In addition, handle and be not limited to Cement Composite Treated by Plasma, also can be other gas treatment.And, be not limited to the substrate of dihedral (polygon) as handled object, also can be semiconductor wafer outside the FPD substrate etc.

Then, with reference to Figure 12～Figure 16 other execution mode is described.In these figure, for marking and Fig. 1～identical label of label shown in Figure 9 with the related etch processes device 2 identical inscapes of the execution mode of having explained.

The etch processes device 2a that this execution mode is related, air-flow guiding parts 5 can oscilaltion this is different with the execution mode of having explained of the internal face that will these same parts be fixed on container handling 20 on the one hand.Know as follow-up test is said, even if under the inner evenness situation about equally of etching speed, according to above substrate S to the distance of the distance of the short transverse of the bottom surface of air-flow guiding parts 5, the degree that load effect produces is difference to some extent also.Therefore; The etch processes device 2a that this execution mode is related; Shown in Figure 12, Figure 13 (a), Figure 13 (b), each sheet material 51,52 that constitutes air-flow guiding parts 5 for example is supported on the bottom surface, both ends through support stick 55, and the lifter plate 57 of the outside of the base end side of these each support sticks 55 through being arranged on container handling 20 is connected with elevating mechanism 56; Thus, thus can make air-flow guiding parts 5 integral body go up and down to make to the variable in distance of the short transverse of substrate S at above-below direction.Bellows 58 covers support stick 55 under the state between bottom surface that is connected in container handling 20 and the lifter plate 57, thereby airtight support stick 55 connects the part of container handling 20, thus, plays the effect that keeps the vacuum degree in the container handling 20.

Wherein,, for example buffer board 53, exhaust flow path 24 are being set with Etaching device 2 identical positions shown in Figure 1 for the related etch processes device 2a of this execution mode, but expression for ease, their record of omission in Figure 12～Figure 16.

Has the suitable value that can suppress to Min. load the distance of the short transverse till the inventor can confirm from substrate S to the air-flow guiding parts through follow-up result of the test is said.Therefore; In the related etch processes device 2a of this execution mode; For example through pilot study etc., according to handle gas, be etched the difference of the processing of film etc., the difference of promptly handling classification grasps the height and position that can Min. ground suppresses the air-flow guiding parts 5 that load effect produces in advance.With the information relevant with these suitable height and positions as an information of processing scheme 73 in treatment conditions are stored in the storage part 72 of control part for example shown in Figure 14 7.Then;, the running of etch processes device 2a selects processing scheme 73 through operating portion 74 when beginning by the user; Read the information in the processing scheme 73 according to this selection CPU71, so that this air-flow guiding parts 5 is positioned at the mode of height and position of the most suitable this processing to elevating mechanism 56 output control signals.

In the related etch processes device 2a of this execution mode; Because constituting, air-flow guiding parts 5 can go up and down at above-below direction; So, take out of the obstacle that mouthful 22 identical height become the conveyance of substrate S thereby the proper height position of the air-flow guiding parts 5 in the for example a certain processing sometimes can be positioned at moving into of container handling 20.Therefore; The etch processes device 2a that this execution mode is related; For example shown in Figure 13 (b); Take out of mouthfuls 22 sheet material 51 (below, for the ease of identification numbered 51a) and constitute and to be independent of other three sheet materials 51 (mark identical label 51b) and to go up and down in abutting connection with moving into, for example constitute and when moving into of substrate S taken out of, to move into the lower side of taking out of mouth 22 and keep out of the way to this.

Here; Though the direction that sheet material 51a is kept out of the way also can moved into the upper side of taking out of mouth 22; But from the viewpoint that prevents to fall from the substrate S surface of particle to moving into the process of taking out of that sheet material 51a peels off; Preferably to moving into the lower side of taking out of mouth 22, promptly the lower side in the conveyance path of substrate S is kept out of the way.In addition, shown in figure 12, when processing (substrate S) covers mouthfuls 22 the airflow limitation portion 511 of taking out of that moves into when the ora terminalis of side wall portion 21 sides of sheet material 51a is provided with the side rising that stretch out, at sheet material 51a downwards of the mode that parallels with this side wall portion 21.Under the situation that does not have airflow limitation portion 511; More the etching gas of upper side is via this sheet material 51a with move into gap side (the exhaust flow path 24 1 sides) circulation downwards of taking out of between mouthfuls 22 at sheet material 51a, and the etching gas that causes supplying with to the surface of substrate S is not enough.Utilize this airflow limitation portion 511 can limit the circulation of etching gas.

Then, the effect to the related etch processes device 2a of this execution mode describes.Now;, the running of etch processes device 2a selects processing scheme when beginning by the user; Read the sheet material 51 corresponding (51a, 51b), 52 suitable relevant data of height and position with this processing, shown in Figure 13 (b) not with move into 3 the sheet material 51b, 52 that take out of mouthful 22 adjacency and adjust height and positions through elevating mechanism 56 according to these data of reading.On the other hand; Take out of a remaining sheet material 51a of mouthfuls 22 and be positioned at this and move into and take out of mouthfuls 22 lower side in abutting connection with moving into; For example drop to not with carrying and put the height and position that the rectification part 54 on the platform 3 contacts, standby remains on not the position (Figure 15 (a)) with the substrate S interference of moving into.

Then, open the family of power and influence 23, the arm 81 of outside carrying device 8 is stretched out via moving into take out of mouthfuls 22 substrate S moved into (Figure 15 (b)) after the delivery position of handling in the container 20, lifter pin 34 is risen substrate S is handover to (Figure 15 (c)) on this lifter pin 34.Then; Make arm 81 keep out of the way (Figure 16 (a)) to the outside of container handling 20; Lifter pin 34 is descended; Substrate S carried to place to carry puts on the platform 3 and close the family of power and influence 23 (Figure 16 (b)), make keep out of the way move into take out of mouthfuls 22 lower side sheet material 51a for example as Figure 13 (a) shown in that kind rise to other 3 sheet material 51b, 52 identical height and positions after, according to carrying out etch processes with the related etch processes device 2 identical orders of the execution mode of having explained.

At this moment; Shown in Figure 16 (c); Take out of mouthful 22 identical height and positions when carrying out etch processes when sheet material 51a is positioned at moving into, the airflow limitation portion 511 of ora terminalis side that is arranged on sheet material 51a becomes the state in this field of covering to taking out of the more lower side that mouthfuls 22 lower edge compares and stretch out with moving into; So, utilize the 511 blocking sheet material 51a of this airflow limitation portion and move into the gap of taking out of formation between the mouth 22.Its result; Be limited to the mobile of etching gas that exhaust flow path 24 passes through through this gap from the upper side of sheet material 51a; Flow through the peristome 501 of above-mentioned air-flow guiding parts 5 through etching gas, the state that this etching gas becomes the Surface runoff that spreads all over substrate S carries out etch processes.After etch processes finished, the supply of the gas that stops etching and the supply of RF power were taken out of substrate S according to opposite order when moving into, and finish a series of action.

The etch processes device 2a related according to this execution mode can access following effect.Height and position through making air-flow guiding parts 5 (sheet material 51 (51a, 51b), 52) can be regulated, and can change the distance to the short transverse of the bottom surface of air-flow guiding parts 5 above substrate S according to the process conditions (treatment conditions) of etch processes.Its result can be in the height suitable location that is adjusted to air-flow guiding parts 5 is for example simulated carries out etch processes under the condition of the position of Min. generation load effect.

In addition; 3 sheet material 51b, 52 through making the sheet material 51a (air-flow guiding parts 5) that takes out of mouthful 22 adjacency with moving into of sheet material S can be independent of other go up and down; Even if make the suitable height of air-flow guiding parts 5 for the situation of the position of moving into the substrate S interference of taking out of under, also can only make and move into the sheet material 51a that takes out of mouthful 22 adjacency with this and keep out of the way.At this moment, compare, can consume the less energy with the situation that air-flow guiding parts 5 integral body (four sheet material 51b, 52) are kept out of the way.

Wherein,, these 3 sheet materials were gone up and down integratedly, also can go up and down independently of one another for remaining 3 sheet material 51b, 52.In addition; Be not limited to make and move into the example that the sheet material 51a that takes out of mouthful 22 adjacency independently goes up and down; No doubt about it can certainly make the integral body (four sheet material 51,52) of air-flow guiding parts 5 side that for example becomes one downwards keep out of the way when moving into of substrate S taken out of.

In addition, keep out of the way, compare, be difficult to produce the problem that the substrate S of particle in conveyance falls with the situation of keeping out of the way to its upper side through the lower side that makes sheet material 51a take out of the path to moving into of substrate S.Wherein, the air-flow guiding parts 5 of this execution mode constitutes and can go up and down, and is different with the rectification part 17 of existing type shown in Figure 27, and air-flow guiding parts 5 does not directly carry to place to carry to be put on the platform 9.Therefore, be difficult to occur in air-flow guiding parts 5 and carry that the gap of putting platform 3 forms product, product is peeled off and the trouble on substrate S of dropping when air-flow guiding parts 5 is risen.

(embodiment)

(simulation 1)

Process etch processes device 2 models, simulation is provided with the situation of air-flow guiding parts 5 and the gas flow in the container handling 20 under its situation is not set in container handling 20.What etch processes device 2 models adopted is to carry the container handling 20 interior spaces that place the more upper side that carries the substrate S surface of putting on the platform 3 are divided into 4 parts in chain-dotted line position as shown in Figure 3 model.Supply with etching gass, this gas flow in the simulation process container 20 from the gas spray head 40 on the top in the space that is arranged on this divided model.Etching gas quantity delivered to the model space is 150 (sccm), and pressure is 4.0 (Pa) (0.03 (torr)).In addition, around substrate S, being provided with highly is the rectification part 54 of 10 (mm).

A. simulated conditions

(embodiment 1)

Gas flow in the container handling under the situation that is provided with air-flow guiding parts 5 20 is simulated.The configuration condition of air-flow guiding parts 5 is following:

From the horizontal direction of the interior ora terminalis of external end edge to the air-flow guiding parts 5 of substrate S apart from a (with reference to Fig. 4), 5mm;

Above substrate S to the distance b (with reference to Fig. 4) of the short transverse of the bottom surface of air-flow guiding parts 5,110mm;

(comparative example 1)

Gas flow in the container handling under the situation that air-flow guiding parts 5 is not set 20 is simulated.

B. analog result

The result of (embodiment 1) is shown in Figure 17 (a), and the result of (comparative example 1) is shown in Figure 17 (b).Each figure of Figure 17 (a), Figure 17 (b) is supplied to the streamline of the etching gas in the model space from gas spray head 40 with three dimensional representation.

Result according to (embodiment 1) shown in Figure 17 (a) can know; The major part that is supplied to the etching gas in the container handling 20 drops near the position of putting the zone of carrying of substrate S; Afterwards, through air-flow guiding parts 5 and carry the narrow and small gas flow path 6 put between the platform 3 and be discharged to the outside.Thus, intensive near the streamline of the gas of the top of circumference inlet portion, substrate S of this gas flow path 6, it is big that the flow velocity of the gas in this position becomes.According to analog result, the flow velocity of the etching gas at this position is approximately 1.0m/s.

On the other hand, in the result of (comparative example 1) shown in Figure 17 (b), a part that is supplied to the gas of container handling 20 flows near the side wall portion 21 of container handling 20, does not put area side through carrying of substrate S and is discharged from.In addition, for the gas that arrives substrate S, narrow because the stream of this gas does not become, so the streamline of the gas of the top of the circumference of substrate S is compared with (embodiment 1), more sparse, the flow velocity of this position also diminishes.Can know that according to this analog result the flow velocity of the etching gas at this position is approximately about 0.05～0.5m/s, be the half the following value of (embodiment 1) size.

Can know according to foregoing,,, can make near the flow velocity of the etching gas of the position circumference of substrate S become big at the inlet portion of gas flow path 6 through air-flow guiding parts 5 is set in container handling 20.

(simulation 2)

Consider the etching gas (Cl on substrate S surface ₂) and the reaction and the diffusion influence of aluminium (Al), the fluid distribution of the etching gas in the simulation process container 20.The size of container handling 20 models, the quantity delivered of etching gas and pressure are identical with (simulation 1).

A. simulated conditions

(embodiment 2)

Simulate having with the container handling 20 of (embodiment 1) same structure.

(comparative example 2)

Simulate having with the container handling 20 of (comparative example 1) same structure.

B. analog result

In simulation, obtain etching gas (Cl ₂), the aluminum chloride gas (Al that generates of etching gas and reactive aluminum ₂Cl ₆) and the relevant analog result of these all gases fluid distribution separately.

Wherein, in Figure 18, Figure 19, express the result of etching gas.Figure 18 (a) expression be the result of fluid distribution of number benchmark of chlorine molecule who utilizes vector representation to come the sectional position in chart display model space according to the analog result of (embodiment 2), Figure 18 (b) expression be the result of the same one side of comparative example 2.The direction of arrow among these figure is represented the direction of the fluid in the basic point position of this arrow, and the length of arrow representes that the Fluid Volume of this position is (individual/m ²S), the longer then fluid flow of arrow is big more.In addition, Figure 19 representes is that chart shows the result that the fluid flow through the etching gas that consumes on substrate S surface with reactive aluminum distributes, and transverse axis is represented from 0 distance to X-direction shown in Figure 3.What wherein, be labeled in numeric representation on the transverse axis of Figure 18 is above-mentioned 0 relative distance of distance when carrying the width of putting platform 3 and be 1.In addition, in Figure 19, represent the result of (embodiment 2), be represented by dotted lines the result of comparative example 2 with solid line.

Result according to (embodiment 2) shown in Figure 18 (a) can know that at the near surface of substrate S, etching gas moves to substrate S from upper side (spray head 40 sides) with respect to directions X much the samely.On the other hand, the result according to the comparative example 2 shown in Figure 18 (b) can confirm to exist the fluid of circumference one side of substrate S from side wall portion 21 1 side direction of container handling 20.In more detail; Direction and size to the arrow in each round zone that surrounds among Figure 18 (a), Figure 18 (b) compare; Can observe in the comparative example that air-flow guiding parts 5 is not set 2 and to exist towards the flowing of the etching gas of the circumference side of substrate S, what show as this etching gas more significantly mobilely becomes a main cause and causes load.

Therefore; According to Figure 19; Compare between (embodiment 2) and (comparative example 2), distributing at the Fluid Volume of the etching gas of substrate S apparent consumption; In any one distribution, all depict Fluid Volume along with the central authorities' (0 point) from substrate S slowly reduce near the profile diagram that Fluid Volume rises once more the circumference of substrate S to circumference.Yet in comparative example 2, (near the minimum value of the Fluid Volume the X=310～330mm) is in a ratio of the difference more than about twice with the maximum of the external end edge of substrate S to the distance of distance center.In contrast, under the situation of (embodiment 2), the amplitude of variation of Fluid Volume is converged in the positive about 30% of minimum value, rests on more slowly to change.Can know through above comparison, can make towards the etching gas quantity delivered homogenizing on substrate S surface, make the etching speed homogenizing, the inner evenness of etch processes is improved through air-flow guiding parts 5 is set in container handling 20.

(experiment 1)

Process the etch processes device 2 that has with the container handling 20 of simulation each embodiment of 1,2, comparative example same structure; Carry out etching, the etch rate distribution that causes because of having or not of air-flow guiding parts 5, the difference of inner evenness are investigated at the aluminium film of substrate S surface formation.

A. experiment condition

Carrying in the container handling 20 that has with above-mentioned (embodiment 1) same structure put platform 3 and uploaded and put the substrate S (vertical 680 (mm) * horizontal stroke 880 (mm)) that is formed with the aluminium film; Supply with etching gas, the former configuration buffer board 53 of 4 exhaust flow paths 24 on the diapire that is arranged at container handling 20 according to the condition identical (etching gas quantity delivered 600sccm, pressure 4.0Pa (0.03torr)) with (embodiment 2).In addition; For the RF power of putting platform 3 supplies that carries that to double as is lower electrode; The electric power (13.56MHz) that applies from the first high frequency electric source portion 311 that plasma generation is used is 5.5kW, and the electric power (3.2MHz) that the second high frequency electric source portion 312 of the ion introducing usefulness from plasma applies is 1kW.

(embodiment 3)

The container handling 20 that use has the air-flow guiding parts 5 (a=5mm, b=110mm) identical with (embodiment 1) carries out etch processes, the distribution of investigation etching speed.Etching speed adds up to 21 some instrumentation etching speeds to the position of the black circles " ● " on the plane graph that is distributed in substrate S shown in Figure 20 as instrumentation point, tries to achieve its inner evenness.(x, y) coordinate position of the each point when the left lower end of the numeric representation substrate S of the horizontal breastmark of each instrumentation point is " 0 " point.In addition, the uniformity of etching speed is calculated according to following formula (2).

Inner evenness (%)=[{ (E/R) _MAX-(E/R) _MIN}/{ (E/R) _MAX+ (E/R) _MIN] * 100... (2)

Wherein, (E/R) _MAX: the maximum of etching speed

(E/R) _MIN: the minimum value of etching speed

(comparative example 3)

Identical with comparative example 1, use the container handling 20 that does not possess air-flow guiding parts 5 to carry out etch processes, to the distribution of etching speed being investigated with above-mentioned (embodiment 3) identical instrumentation point.

B. experimental result

The result of (embodiment 3) is shown among Figure 21 (a), and the result of (comparative example 3) is shown among Figure 21 (b).In each figure; The position that the instrumentation point of in Figure 20, representing with black circles is corresponding is illustrated in the etching speed

that this instrumentation point instrumentation arrives

Result according to (embodiment 3) of Figure 21 (a) expression obtains following result; Promptly; For the etch rate distribution on substrate S surface, big at the central etching speed of substrate S, along with the etching speed of advancing to the circumference side of substrate S diminishes; Circumference etching speed at substrate S becomes maximum, and the Fluid Volume of the etching gas that is supplied to substrate S surface shown in Figure 19 (embodiment 2) distributes roughly consistent.The mean value of the etching speed that these instrumentation points are all be 3520

uniformity is 7.2 [%].

On the other hand; Result according to (comparative example 3) shown in Figure 21 (b) can confirm; Identical with the situation of (embodiment 3), big at the central etching speed of substrate S, along with the etching speed of advancing to the circumference side of substrate S diminishes; Become maximum etch rate distribution at the circumference etching speed of substrate S, obtain the roughly consistent result that distributes of the Fluid Volume shown in (comparative example 2) with Figure 19.The mean value of the etching speed that these instrumentation points are all be 3160

uniformity is 17.0 [%]; The mean value of etching speed reduces, and uniformity worsens.

Like this, (embodiment 3) and (comparative example 3) are compared, because can carry out the high etch processes of uniformity, so learn that it is to suppress the effective ways that load effect produces that air-flow guiding parts 5 is set in container handling 20 according to (embodiment 3).In addition, in the experimental result of (embodiment 3) because average etching speed rises, under the identical situation of institute's etch depth that is selected in through the effect that air-flow guiding parts 5 can access the shortening processing time is set.This is considered to, and does not reach substrate S surface in the prior art via the etching gas of side wall portion 21 sides through being discharged from, through be provided with air-flow guiding parts 5 pass through substrate S surface near, be supplied to the reason that the whole etching gas amount of substrate S increases.

(experiment 2)

Make changing apart from a the allocation position of the external end edge of air-flow guiding parts 5 and the relation of etching speed being investigated of horizontal direction till the interior ora terminalis of external end edge to the air-flow guiding parts 5 of substrate S.The supply concentration of etching gas quantity delivered, container handling 20 internal pressures, etching gas, the supply conditions of RF power are identical with (experiment 1).In addition, the fixed distance to the short transverse of the bottom surface of air-flow guiding parts 5 is " b=110mm " above substrate S.

A. experiment condition

(embodiment 4) " a=-45mm " (from the external end edge of substrate S position of 45mm to the inside).Carry out the instrumentation of instrumentation point, obtain inner evenness according to above-mentioned formula (2) for 6 points of total of the A point (center) shown in Figure 20, B point (centre position), C2 point (corner is the position slightly in the inner part), D1 point (first peripheral position), D2 point (second peripheral position), D3 point (the 3rd peripheral position).

(embodiment 5) " a=+5mm " (from the external end edge of substrate S position of 5mm laterally).Instrumentation point is identical with (embodiment 4).

(embodiment 6) " a=+40mm " (from the external end edge of substrate S position of 40mm laterally).Instrumentation point is identical with (embodiment 4).

B. experimental result

The result of (embodiment 4)～(embodiment 6) is shown in Figure 22.The transverse axis of Figure 22 is represented apart from the distance of the external end edge of substrate S " a (mm) "; The longitudinal axis in left side representes that etching speed

is corresponding with these; The etching speed of each embodiment is represented with white empty circles " zero " diagram at A point (center);, represent with blank triangle " △ " diagram with the expression of dark circles " ● " diagram at B point (centre position) at C2 point (corner is the position slightly in the inner part).In addition, about the etching speed of D1 point～D3 point (first～the 3rd peripheral position), its minimum value and maximum with the expression of whippletree "-" diagram, become the scope that connects between it with ordinate and represent respectively.

In addition, the longitudinal axis on right side is represented inner evenness " % ", and the result of each embodiment is to intersect the expression of mark " * " diagram.

According to the result of (embodiment 4)～(embodiment 6), can access best uniformity for the shortest (embodiment 5) from the distance of the interior ora terminalis of external end edge to the air-flow guiding parts 5 of substrate S.On the other hand; In the mode with covered substrate S air-flow guiding parts 5 is become in (embodiment 4) of outstanding state, compare with (embodiment 5), the A point of center side, the etching speed that B is ordered rise; On the other hand, etching speed reduces in the C2 of circumference side point, the D1～D3 point.This is considered to; Through making air-flow guiding parts 5 outstanding to the circumference of substrate S; Supply with and the etching gas that descends is blocked by air-flow guiding parts 5 from gas spray head 40, can not directly arrive this regional substrate S surface and cause etching speed to reduce, on the other hand; The quantitative change of the etching gas on the substrate S surface of arrival center side is many, and etching speed rises.

Here; If air-flow guiding parts 5 for example is about " a=-10mm " to the degree that substrate S side is stretched out; Then for almost ignoring the effect of blocking of 5 pairs of etching gass of air-flow guiding parts; If in the scope of " 10mm≤a≤+ 10mm ", then identical with (embodiment 5), the uniformity of etching speed is best.

In addition; Compare with (embodiment 5); Comparing laterally direction with the external end edge of substrate S at the interior ora terminalis of air-flow guiding parts 5 leaves in (embodiment 6) of 35mm; The A point of center side, the etching speed that B is ordered reduce, and etching speed rises in the C2 point of circumference side, the D1 point～D3 point, obtain and (embodiment 4) opposite phenomenon.This is considered to, and the inner end positions of air-flow guiding parts 5 is far away more apart from substrate S, and the effect that air-flow guiding parts 5 is set reduces more, to the big result of influence change of load effect.

The experimental result of comprehensively (embodiment 4)～(embodiment 6) can know, through making from the changing apart from a of the horizontal direction of the interior ora terminalis of external end edge to the air-flow guiding parts 5 of substrate S, and can regulate the center side of substrate S, the etching speed of circumference side.Therefore; For example; Under the situation of use air-flow guiding parts 5 as shown in Figure 2, when having the situation etc. of deviation of etching speed in peripheral direction, shown in the example of Figure 11 (a) along substrate S; Can confirm to adopt the generation position according to this deviation outstanding partly to the inside, the air-flow guiding parts 5c of the type of depression is an effective method laterally.

(experiment 3)

Use is studied with (testing 2) identical data carrying 2 pairs in etch processes device putting the type that does not possess rectification part 54 on the platform 3.In addition each experiment condition is identical with (experiment 2).

A. experiment condition

(embodiment 7)

Experiment condition, instrumentation point according to identical with (embodiment 4) are studied the inner evenness of etching speed, etch processes.

(embodiment 8)

Experiment condition, instrumentation point according to identical with (embodiment 5) are studied the inner evenness of etching speed, etch processes.

(embodiment 9)

Experiment condition, instrumentation point according to identical with (embodiment 6) are studied the inner evenness of etching speed, etch processes.

B. experimental result

The result of (embodiment 7)～(embodiment 9) is shown in Figure 23.About transverse axis and about the implication of the longitudinal axis, each chart (plot) identical with Figure 22.

Result according to (embodiment 7)～(embodiment 9) can know, according to the variation tendency apart from the etching speed of each the instrumentation point on the substrate S of the variation of a, with coming to the same thing of (embodiment 4) with rectification part 54～(embodiment 6).Yet for (embodiment 7)～(embodiment 9) any one, with comparing apart from a experimental result under the same conditions in (embodiment 4) that are provided with rectification part 54～(embodiment 6), the inner evenness of etch processes worsens respectively.This result shows that rectification part 54 has the effect of the inner evenness deterioration that can suppress to cause along with the generation of load.

(experiment 4)

Make above substrate S to the distance b of the short transverse of the bottom surface of air-flow guiding parts 5 to change, to studying with (embodiment 2) identical data.Each experiment condition is identical with (experiment 1).In addition, the fixed distance from the horizontal direction of the interior ora terminalis of external end edge to the air-flow guiding parts 5 of substrate S is " a=+5mm ".

A. experiment condition

(embodiment 10) " b=50mm ".Instrumentation point is identical with (embodiment 4).

(embodiment 11) " b=110mm ".Instrumentation point is identical with (embodiment 4).

B. experimental result

The result of (embodiment 10), (embodiment 11) is shown in Figure 24.About transverse axis and about the implication of the longitudinal axis, each chart identical with Figure 22.

Result according to (embodiment 10), (embodiment 11) can know that even if make the height change of air-flow guiding parts 5, the inner evenness of etching speed bigger variation can not take place yet in the scope of 50mm～110mm.On the other hand, observe each instrumentation point, in distance b bigger (embodiment 11), the A point of center side, B point etching speed are high, temporarily reduce in the C2 point etching speed of circumference side, become big once more in the D1 of circumference point～D3 point etching speed.The Fluid Volume of this expression and the etching gas of substrate S near surface under the situation that air-flow guiding parts 5 the is not set shown in Figure 19 corresponding to etch rate distribution that distributes.Can think that according to this practical work become big if make the position of air-flow guiding parts 5 increase distance b successively, the effect that air-flow guiding parts 5 then is set diminishes successively, slowly demonstrates the influence of load effect.According to this investigation; Under the situation of use air-flow guiding parts 5 as shown in Figure 2; The situation etc. that has the deviation of etching speed along the peripheral direction of substrate S; Shown in the example of Figure 11 (b), think that adopting generation position according to this deviation to make the air-flow guiding parts 5d of highly different types is effective method.In addition, for example replace and further reduce width that air-flow guiding parts 5d makes air-flow guiding parts 5d and become ambassador and increase etc., make up two parameters variations and also can apart from a.

(experiment 5)

Make above substrate S to the distance of the short transverse of the bottom surface of air-flow guiding parts 5 and divide three parts to change, carry out the experiment once more of (experiment 4).At this moment; For the generation degree to load is estimated; Except 6 points (the A point shown in Figure 20, B point, C2 point, D1 point～D3 point) of instrumentation in above-mentioned (embodiment 4), instrumentation C1 point (inboard a little of first peripheral position), C3 point (inboard a little of the 3rd peripheral position).Inner evenness is tried to achieve according to above-mentioned formula (2), and further tries to achieve the index (below, be called " load index ") of the generation degree of estimating load according to following formula (3).

AVE _D1～D3-AVE _C1～C3/AVE _D1～D3+AVE _C1～C3...(3)

Wherein, AVE _D1～D3: the mean value of the etching speed that D1 point～D3 is ordered

AVE _C1～C2: the mean value of the etching speed that C1 point～C3 is ordered

Each experiment condition is identical with (experiment 1).In addition, the fixed distance from the horizontal direction of the interior ora terminalis of external end edge to the air-flow guiding parts 5 of substrate S is " a=+5mm ".

A. experiment condition

(embodiment 12) " b=17mm ".

(embodiment 13) " b=50mm ".

(embodiment 14) " b=117mm ".

B. experimental result

The result of (embodiment 12)～(embodiment 14) is shown in Figure 25.About transverse axis and about the implication of the longitudinal axis, each chart identical with Figure 22, the load index is with square " " the diagram expression of blank.

Can learn according to experimental result shown in Figure 25; Uniformity is paid close attention in the opposite; Can't see significant difference between (embodiment 13) and (embodiment 14), confirm the result's (with reference to Figure 24) of about equally (embodiment 10) of experiment condition and these embodiment, (embodiment 11) reproducibility.On the other hand, in (embodiment 12) apart from minimum of above-mentioned short transverse, inner evenness worsens to more than the twice of other embodiment.

Then, if confirm the load index, then according to formula (3), for the load effect index, the mean value AVE of the etching speed that D1 point～D3 is ordered _D1～D3With the mean value AVE that compares the etching speed that a little inboard C1 point～C3 orders with these instrumentation points _C1～C3Compare, when the etching speed of periphery is big, when promptly observing the influencing of load effect on the occasion of, when the etching speed of inboard is big, be negative value when promptly the phenomenon opposite with load effect taking place.In addition, the difference of these average speeds is big more, and it is big more that the absolute value of load index becomes.

From the load desired value that these viewpoints are observed (embodiment 12)～(embodiment 14), the desired value of each embodiment be on the occasion of, though exist the difference of degree all can observe the generation of load in any embodiment.Therefore, the load desired value of each embodiment is compared, the desired value of (embodiment 13) is minimum to be (1.7%).On the other hand, do not observe bigger difference although (embodiment 14) are compared with (embodiment 13) aspect inner evenness, its load desired value is about its 4 times (6.9%).In addition, in inner evenness worst (embodiment 12), the load desired value is about 7 times (11.9%) of (embodiment 13).

Can know according to these results; Shown in figure 25; When the height and position that makes air-flow guiding parts 5 is put when slowly uprising near the substrate S on the platform 3 from carrying; Depict load as and refer to that target value is the downward protruding curvilinear motion of the very little value of maintenance, confirm to exist the distance that can suppress to Min. the proper height of load generation.

Reason to this phenomenon produces is studied simply; For example, shown in (embodiment 12), under the too low situation of the height and position of air-flow guiding parts 5; Shown in Figure 26 (a) pattern; The allocation position of air-flow guiding parts 5 is too put the substrate S on the platform 3 near carrying, and therefore, the unreacted etchant diffusion that for example is trapped in the top of air-flow guiding parts 5 arrives the required time weak point of substrate S circumference.Therefore, unreacted etchant just arrives the circumference of substrate S before going through the flow downstream effluent in gas flow path 6, infers the influence that occurs load significantly.

On the other hand; Shown in (embodiment 14), when the height and position of air-flow guiding parts 5 was too high, the flow velocity of airflow flowing was slow in gas flow path 6; Therefore; For example shown in Figure 26 (b), become big relatively to the circumference diffusion influence of substrate S, think that thus the influence of load effect becomes big from this unreacted etchant of upper side that flows.

According to above research; Under the situation of (embodiment 13); Air-flow guiding parts 5 is not too put the substrate S on the platform 3 near carrying; And the flow velocity of the air-flow that in gas flow path 6, forms is too not slow, therefore, becomes unreacted etchant and is difficult to utilize diffusion to arrive the state of the circumference of substrate S.This is because when making above substrate S the variable in distance to the short transverse of the bottom surface of air-flow guiding parts 5, and existence can Min. ground suppresses the suitable distance of the generation of load.Adjusting constitutes the height and position of the air-flow guiding parts 5 that can go up and down, and makes the distance of above-mentioned short transverse become the suitable value of grasping in advance, can improve inner evenness thus, and can receive the little etch processes of influence of load.

Claims (13)

1. a processing unit is characterized in that, comprising:

Be arranged on the inside of container handling, be used for carrying and put carrying of handled object and put platform;

Be used for putting the upper side supply processing gas of platform, put the processing gas feed unit that the handled object on the platform is handled this year carrying to place from this year;

Be used for putting the gas exhaust portion that the gas in the container handling is carried out exhaust on every side of platform from said year; With

The Zhou Fangxiang that puts platform along this year is arranged on the top of putting the circumference of platform in said year, and this circumference between the air-flow guiding parts of steering current laterally,

This processing unit also comprises the elevating mechanism that said air-flow guiding parts is gone up and down,

It is different between during with conveyance when the processing of handled object that said air-flow guiding parts is controlled as its height,

Airflow limitation portion is set on the air-flow guiding parts; Make the gap of taking out of between the mouth through moving on this air-flow guiding parts and the sidewall that is arranged on container handling for the gas that suppresses upper side when the processing of handled object downwards side through and covering moving into of handled object and take out of mouth; On the other hand, this airflow limitation portion takes out of a mouthful adjoining position and keeps out of the way from moving into this when the conveyance of handled object.

2. processing unit as claimed in claim 1 is characterized in that:

Said air-flow guiding parts is tabular endless member, has and the corresponding peristome of the outer shape of putting the handled object on the platform in said year.

3. processing unit as claimed in claim 1 is characterized in that:

Said air-flow guiding parts is the parts that are embedded in the space of top of the circumference of putting platform in said year.

4. like each described processing unit in the claim 1～3, it is characterized in that:

The interior ora terminalis of said air-flow guiding parts than the top position of the external end edge of said handled object more in the outer part.

5. like each described processing unit in the claim 1～3, it is characterized in that:

The interior ora terminalis of said air-flow guiding parts is positioned at from the top position of the external end edge of said handled object along horizontal direction and departs from ± scope of the position of 10mm.

6. like each described processing unit in the claim 1～3, it is characterized in that:

Corresponding position of putting the Zhou Fangxiang of platform in said year makes the height of said air-flow guiding parts different, so that the processing speed of utilizing said processing gas treatment handled object is with respect to the direction homogenizing along the periphery of this handled object.

7. like each described processing unit in the claim 1～3, it is characterized in that:

Make said air-flow guiding parts part outstanding to the inside or caved in laterally in this air-flow guiding parts part, so that the processing speed of utilizing said processing gas treatment handled object is with respect to the direction homogenizing along the periphery of this handled object.

8. like each described processing unit in the claim 1～3, it is characterized in that, comprising:

To surround the rectification part that the mode of putting the handled object on the platform in said year is provided with, the upper surface of this rectification part is higher than the surface of this handled object.

9. processing unit as claimed in claim 1 is characterized in that:

Said air-flow guiding parts is the internal face of said container handling that extend out to the top of the circumference of putting platform in said year.

10. processing unit as claimed in claim 1 is characterized in that:

Control, make in said air-flow guiding parts, make at least to drop to when the conveyance of handled object in abutting connection with the position that moving into of said handled object taken out of mouthful to move into and take out of a mouthful low position than this.

11. processing unit as claimed in claim 10 is characterized in that:

Said air-flow guiding parts is separated by parts side wall portion that is arranged on said container handling, that take out of mouthful adjacency with moving into of handled object and with these parts and another parts of forming constitute, and said elevating mechanism can make these parts and another parts independently go up and down.

12. processing unit as claimed in claim 1 is characterized in that, comprising:

Be used to store the storage part of the data relevant with the height and position of the treatment conditions of handled object and said air-flow guiding parts; Control part with the said elevating mechanism of control makes it possible to read the data that are stored in the said storage part according to selected treatment conditions, regulates the height and position of air-flow guiding parts according to the data of reading.

13., it is characterized in that like each described processing unit in the claim 1～3:

Being treated to of carrying out of said handled object is formed at the lip-deep etch processes that is selected from least a film in aluminium film, aluminium alloy film, titanium film and the titanium alloy film that contains of handled object.

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