KR20090086043A - Treatment apparatus - Google Patents

Abstract

A treating apparatus is provided to improve in-plane uniformity of treatment by preventing that a non-reactive treating gas is diffused in a substrate on a mounting bar. A treating apparatus includes a mounting bar(3), a treating gas supply part(44), a gas exhaust part, and an air flow guide member(5). The mounting bar is arranged inside a treating vessel(20). A substrate(S) is mounted on the mounting bar. The treating gas supply part supplies the treating gas from a top part of the mounting bar, and treats the substrate. The gas exhaust part exhausts a gas inside the treating vessel. The air flow guide member is formed according to a circumference direction of the mounting bar in order to guide an air flow to an outer side direction. The air flow guide member has an opening part. A shape of the opening part corresponds to an outer shape of the substrate.

Description

Processing unit {TREATMENT APPARATUS}

The present invention is a technique for supplying a processing gas to a processing object such as a glass substrate for a FPD (flat panel display) in a processing container, and performing a predetermined processing on the processing object by the processing gas. It is about.

In manufacturing processes, such as a glass substrate for liquid crystal displays (LCD), there exists a process of performing an etching process with respect to the aluminum (Al) film formed on the glass substrate. An example of an etching processing apparatus for carrying out this step will be briefly described with reference to FIG. 27. In FIG. A mounting table 11 for mounting the following (hereinafter abbreviated as substrate S) is provided, and a processing gas supply section 12 that forms an upper electrode so as to face the mounting table 11 is provided. Then, the etching gas made of, for example, a chlorine (Cl ₂ ) -based gas is supplied from the processing gas supply part 12 into the vacuum chamber 1, and the vacuum chamber 1 is not shown through the exhaust path 13 by a vacuum pump (not shown). By vacuum suction inside, the plasma of an etching gas is formed in the space above the board | substrate S by applying a high frequency power from the high frequency power supply 14 to the said mounting base 11, and, thereby, to the board | substrate S The etching process is performed.

 By the way, in the etching of the Al film, the supply rate speed, that is, the supply amount of the etching gas and the etching amount is in proportion, so that the etching rate of the peripheral part of the substrate S becomes extremely fast due to the loading effect, and the etching amount increases. Occurs. That is, in the peripheral part of the board | substrate S shown by the code | symbol 15 in FIG. 28, an etching area is about half compared with the center area of the same area shown by the code | symbol 16 from the etchant Cl radical. Therefore, when the etching gas is supplied at the same flow rate as that supplied to the central region 16, the etching amount is approximately doubled in the peripheral portion 15 as compared with the central region 16.

 For this reason, conventionally, for example, as shown in Figs. 27 and 29 (a), by providing a rectifying member 17 having a height of about 50 mm to 150 mm so as to surround the periphery of the substrate S, the substrate S The countermeasure which cuts off the flow of the etching gas in the vicinity of the periphery part by the rectifying member 17, and forms the gas flow around the board | substrate S has been employ | adopted. Thereby, the etching gas flow rate in the said area can be reduced and the uniformity of the etching rate in a board | substrate surface can be improved.

At this time, the upper end side of the rectifying member 17 is higher than the conveyance height position of the board | substrate S from the loading / exit opening 10 provided in the side wall part of the vacuum chamber 1 to the upper side of the mounting table 11. In this case, the substrate S being conveyed and the rectifying member 17 interfere with each other. Thus, for example, as shown in FIG. 29 (b), the rectifying member 17 is configured to be liftable, and at the time of carrying in, the mounting table 11 is raised in a state in which the rectifying member 17 is raised from the mounting table 11. The board | substrate S is carried in through the clearance gap between the rectifying member 17 and the board | substrate S on the mounting table 11, and then the said commutating member 17 is lowered, and at the time of carrying out, Carrying out the board | substrate S through the said space | interval is carried out after raising 17) than the mounting table 11. As shown in FIG.

Here, the rectifying member 17 forms a frame by combining four board | plate materials 171, for example, and it is set as the structure mounted on the mounting base 11 so that this frame may surround the board | substrate S. As shown in FIG. For example, protrusions 172 are provided on the side surface of each plate 171 so as to extend outward of the mounting table 11, and support rods 181 for elevating are connected to the lower surface of each protrusion 172. It is. And the whole of the commutation member 17 can be raised and lowered by elevating each support bar 181 by the elevating mechanism 18. As shown in FIG.

By the way, in the etching process by the chlorine gas of Al film, the chloride of Al produces | generates, and this adheres also to the inner wall of the rectifying member 17. As shown in FIG. When the deposition amount of the attached chloride increases, the chloride easily peels off at the time of lifting and lowering of the rectifying member 17, and causes generation of particles. Therefore, maintenance for removing the deposit must be frequently performed.

This maintenance operation is a process of returning the atmosphere in the vacuum chamber 1 to the standby state, then opening the chamber 1 to remove the deposits, and then closing the chamber 1 to perform vacuum suction. Is executed. However, with the recent increase in the size of the substrate S, the vacuum chamber 1 has also increased in size, requiring a very long time to return the atmosphere in the vacuum chamber 1 to the atmospheric state or to perform vacuum suction. Done. Since the work time of the whole maintenance work becomes very long by this, frequent execution of maintenance work becomes one of the factors which hinders the improvement of throughput.

In order to solve this problem, the present inventors have developed an etching treatment apparatus which suppresses the generation of particles and also suppresses the loading by not using the above-mentioned lifting type rectifying member. Moreover, as a prior art regarding a rectifying member, patent document 1 describes the structure which provided the movable type ring comprised by the movement mechanism on the lower electrode as a rectifying member, and patent document 2 so that the outer periphery of a board | substrate may be enclosed. Although the structure which provides the side wall provided with the gas flow port as a rectifying member is described, PTL 3 describes the example which comprises a rectifying member by the some side wall part provided along the outer periphery of a board | substrate, The literature does not describe a configuration in which a substrate can be mounted on a mounting table without driving the rectifying member, and the above-described problems cannot be solved by any of the techniques described in these documents.

Patent Document 1: Japanese Patent Application Laid-Open No. 1996-74155; Paragraph 0009, FIG. 1

Patent Document 2: Japanese Patent Laid-Open No. 2003-243364; Paragraph 0014, FIG. 3

Patent Document 3: Japanese Patent Laid-Open No. 2005-259989; Paragraph 0029, FIG. 1

The present invention has been made in view of the above circumstances, and an object thereof is to improve the in-plane uniformity of the treatment in performing the treatment with respect to the processing object while flowing the processing gas in the processing container, and to improve the adhesion of particles to the processing object. It is to provide a processing apparatus that can be suppressed.

The processing apparatus which concerns on this invention is provided in the inside of a processing container, The mounting table for mounting a to-be-processed object,

Processing gas supply means for supplying a processing gas from an upper side of the mounting table to execute the processing on the target object mounted on the mounting table;

A gas exhaust unit for exhausting gas in the processing container from the periphery of the mounting table;

It is provided in the circumferential direction of the said mounting base above the periphery of the said mounting base, and is provided with the airflow guide member which guides an airflow outwardly between the said peripheral parts.

For example, when the airflow guide member is a plate-shaped annular member having an opening corresponding to the outer shape of the object to be processed on the mounting table, or a member filling a space above the periphery of the mounting table, the mounting table further includes: The case where it is the inner wall surface of the said processing container pushed out to the upper edge part is considered. Further, the inner end edge of the airflow guide member is positioned outside the upper position of the outer end edge of the target object or within a range of a position shifted in a ± 10 mm horizontal direction from an upper position of the outer end edge of the target object. It is desirable to position it.

In addition, the height of the airflow guide member may be different depending on the position in the circumferential direction of the mounting table in order to uniformize the processing speed of the object to be processed by the processing gas with respect to the direction along the outer circumference of the object. The guide member may locally protrude inward, or may be locally recessed outward. Moreover, it may be provided so that the to-be-processed object on the said mounting table may be provided, and the rectifying member whose upper surface is higher than the surface of the to-be-processed object may be provided.

In addition, the above-mentioned processing apparatus may be provided with the lifting mechanism which raises and lowers the airflow guide member. In this case, the said airflow guide member is controlled so that a height may differ between the process of the to-be-processed object and the time of conveyance, At the time of the treatment, the inlet and outlet of the object to be covered are covered to prevent the gas from the upper side from escaping downward through the gap between the airflow guide member and the inlet and outlet on the side wall of the processing container. It is preferable to provide an airflow restricting portion in the airflow guide member so as to evacuate from the position toward the inlet and outlet. At least a portion of the object facing the carry-out port of the target object may be controlled to descend to a position lower than the carry-in port at the time of conveyance of the target object. Further, the airflow guide member is composed of one member adjacent to the inlet / outlet of the object to be provided in the side wall of the processing container, and another member formed separately from the one member, and the elevating mechanism is one of these members. It is suitable to be able to raise and lower the and other members independently.

When the airflow guide member is provided with a lifting mechanism, the storage unit further stores data in accordance with the processing conditions of the object to be processed and the height position of the airflow guide member, and is stored in the storage unit according to the selected processing condition. It is preferable to provide a control unit for reading the data and controlling the lift mechanism to adjust the height position of the airflow guide member based on the read data.

Examples of the treatment to be performed on the object to be treated include an etching process of a film including at least one selected from the group of an aluminum film, an aluminum alloy film, a titanium film or a titanium alloy film formed on the surface of the object to be processed.

According to the present invention, in supplying and treating a processing gas from above from a target object on a mounting table, an airflow guide member is disposed above the periphery of the mounting table in the circumferential direction of the mounting table, and is disposed between the peripheral portion. Airflow is guided outward and exhausted from around the mounting table. For this reason, the unreacted process gas which has not reached the target object is exhausted together with the air flow, so that it is difficult to diffuse into the periphery of the target object on the mounting table. Uniformity can be improved.

In addition, since the lifting type rectifying member that has been conventionally employed is not employed as a method of suppressing the loading, there is a low possibility of generating particles due to the lifting operation of the rectifying member, and contamination of the object to be processed can be suppressed. As a result, the frequency of performing maintenance that requires a long time can be reduced, so that the operation rate of the processing apparatus can be improved and throughput can be improved.

Before demonstrating the specific structure of the etching process apparatus which concerns on this embodiment, the principle which suppresses generation | occurrence | production of a loading is demonstrated briefly. As described in the background art, the loading is understood to be a phenomenon caused by only half the area of the peripheral edge of the substrate S with respect to the supplied etching gas compared with the area of the center side of the substrate S. FIG.

MEANS TO SOLVE THE PROBLEM In the development of the technique which can suppress loading, without using a lifting type rectification member, this inventor simulates the state inside an etching processing apparatus, and the flow of an etching gas and the concentration of the etchant which is a to-be-processed component Detailed examination was performed on distribution and the like. As a result of these studies, knowledge of the fact that the concentration of the etchant at the periphery of the substrate S greatly affected the generation of the loading.

For example, as shown in FIG. 30, the content of the knowledge obtained using the etching processing apparatus in which the rectifying member 17 for load suppression is not provided is demonstrated. The flow of the etching gas supplied from the processing gas supply part 12 descends while spreading out the inside of the vacuum chamber 1 as shown schematically in FIG. 30, and after reaching the substrate S, the substrate ( It moves along the surface of S) and flows to the peripheral part side, and is discharged | emitted from the exhaust path 13 through the side of the mounting table 11 next. The etchant in the gas is reacted with aluminum when it flows through the surface of the substrate S, and is consumed and discharged in a state where the concentration of the etchant is lowered.

By the way, in the gas supplied in the vacuum chamber 1, for example, the etching gas supplied from the supply hole of the outer end side of the process gas supply part 12 passes through the vicinity of the side wall part of the vacuum chamber 1, a board | substrate. Since it does not reach (S), there is a flow chart in which the etchant is not consumed and is discharged in a high concentration state. In this way, when regions having different concentrations of etchant are formed in the vacuum chamber 1, these concentration differences become a driving force and the substrate S side (low concentration) from the side wall portion side (high concentration region) of the vacuum chamber 1 is formed. The etchant spreads toward the area).

In addition, the flow rate of the etching gas flowing in the vacuum chamber 1 is relatively small since the space through which gas flows rapidly in the vacuum chamber 1 after the supply from the processing gas supply part 12 is widened. For this reason, the etchant which diffuses from the side wall part side to the board | substrate S side reaches the board | substrate S against the flow of the etching gas discharged | emitted from the surface of the board | substrate S to the exhaust path 13. As a result, when the center region 16 and the peripheral portion 15 of the surface of the substrate S are compared, the concentration of the etchant increases at the peripheral portion 15, and the loading effect is promoted even by the concentration difference of the etchant. Confirmed.

The etching process apparatus which concerns on this embodiment was developed based on this knowledge, and is equipped with the structure which can suppress the diffusion of the etchant which goes along the board | substrate S side from the side wall part side of a vacuum chamber. Hereinafter, the structure of the etching processing apparatus 2 which concerns on embodiment is demonstrated, referring FIGS. 1-5.

The etching apparatus 2 shown in the longitudinal sectional view of FIG. 1 has a function of performing an etching process on an aluminum (Al) film formed on the surface of a substrate S, which is an object to be processed, for example, an FPD substrate. The etching apparatus 2 includes a processing chamber 20 that is a vacuum chamber for performing an etching process on the substrate S therein, and the processing container 20 has, for example, a planar shape having a square shape. It is formed in a shape. In addition, the processing container 20 is grounded.

The substrate S is a rectangular substrate, and the processing container 20 has a size of about 3.5 m on one side of the horizontal cross section and about 3.0 m on the other side, and is made of a material having good thermal conductivity such as aluminum, for example. It is composed by. One sidewall portion 21 of the processing container 20 is provided with a carrying in and out port 22 for carrying the substrate S into the processing container 20, and the carrying in and out port 22 has a gate valve 23. It is comprised so that opening and closing is possible.

The mounting table 3 for mounting the substrate S on the upper surface of the processing container 20 is disposed. The mounting table 3 is electrically connected to a first high frequency power supply section 311 for generating plasma and a second high frequency power supply section 312 for introducing ions into the plasma, and generates plasma in the processing vessel 20. It serves to attract ions in the plasma to the surface of the substrate (S). The mounting table 3 is disposed on the bottom surface of the processing container 20 via an insulating member 32, whereby the mounting table 3 serving as the lower electrode is in an electrically floating state from the processing container 20. . In addition, the periphery and side surfaces of the surface of the mounting table 3 are covered with a shield ring 33 made of a ceramic material for uniformly forming plasma above the mounting table 3.

In addition, the mounting table 3 is provided with a transfer device external to the etching processing apparatus 2 (not shown) and a lifting pin 34 for carrying the substrate S between the mounting tables 3. The lifting pin 34 is configured to be driven from the surface of the mounting table 3 by the lifting plate 36 connected to the lifting mechanism 35, and receives the transfer of the substrate S between the external conveying means. The board | substrate S can be raised and lowered between the said position and the mounting area of the to-be-processed object provided in the surface of the mounting table 3, and to which the board | substrate S is mounted. The bellows 37 is provided in the part through which the lifting pin 34 penetrates the processing container 20, and this bellows 37 is connected between the bottom surface of the processing container 20 and the lifting plate 36. Covers the lift pins 34 in the closed state, and serves to maintain the airtightness in the processing container 20.

On the other hand, above the mounting table 3 inside the processing container 20, a flat upper electrode 4 is provided to face the surface of the mounting table 3, and the upper electrode 4 has a square plate shape. It is supported by the upper electrode base 41. These upper electrodes 4 and the upper electrode base 41 are made of aluminum, for example. In addition, the upper surface of the upper electrode base 41 is connected to the ceiling of the processing vessel 20, whereby the upper electrode 4 is connected to the processing vessel 20 in an electrically conductive state, and at the same time, the upper electrode base 41 ) And the space surrounded by the upper electrode 4 constitute a gas diffusion space 42 of the etching gas. Hereinafter, these upper electrodes 4, the upper electrode base 41, and the like are collectively referred to as a gas shower head 40.

In addition, a processing gas supply path 43 is provided at the ceiling of the processing container 20 so as to be connected to the gas diffusion space 42, and the other end side of the processing gas supply path 43 is connected to the processing gas supply part 44. It is. In this example, the processing gas supply means is constituted by the upper electrode 4 and the upper electrode base 41. In this way, when the etching gas is supplied from the processing gas supply part 44 to the gas diffusion space 42, the etching gas passes through the gas supply hole 45 provided in the upper electrode 4 to the processing space above the board | substrate S. It supplies, and the etching process with respect to the board | substrate S is advanced by this. On the other hand, one end side of the exhaust passage 24 constituting the gas exhaust section is connected to the bottom wall of the processing container 20, and a vacuum pump (not shown) is connected to the other end side of the exhaust passage 24, for example. For example, as illustrated in the plan view of FIG. 5, the exhaust paths 24 are disposed at four locations on the outer side of the nearly center position of each side of the mounting table 3.

By having the above structure, the etching process apparatus 2 is comprised as a plasma etching apparatus of a lower two frequency form, plasmates the etching gas supplied in the process container 20, and performs the etching of the board | substrate S. FIG. Can be. And the etching apparatus 2 which concerns on this embodiment is further provided with the structure for suppressing generation | occurrence | production of the loading by diffusion of an etchant in the wall part side. Hereinafter, the content is explained in full detail.

Above the periphery of the mounting table 3, for example, above the shield ring 33, for example, ceramics, quartz, anodized aluminum, and these members, for example, yttrium oxide (Y2O3) The airflow guide member 5 comprised of the board | plate material in which the thermal sprayed coating was formed is arrange | positioned. For example, as shown in the perspective view of FIG. 2, the airflow guide member 5 combines four board members 51 and 52 in a "ro-shape" to pass the etching gas to the substrate S side. The structure provided with the opening part 501 is provided. In addition, the airflow guide member 5 has a carrying in and out opening 22 provided in the side wall portion 21 in order to enable carrying in and out of the substrate S through the space between the member 5 and the mounting table 3. The outer end edges of the respective plate materials 51 and 52 are fixed to the wall surface of the side wall portion 21 so that the bottom surface thereof is positioned directly above, for example.

The size of the opening part 501 in this embodiment is comprised by larger size or smaller size than the board | substrate S on the mounting table 3, for example, as shown in the top view of FIG. The flow of the etching gas supplied from the 45 is almost blocked so that the substrate S can be reached.

Here, the positional relationship between the airflow guide member 5 and the substrate S on the mounting table 3 will be described in detail with reference to FIG. 4. The inner end of the airflow guide member 5 is formed from the outer end edge of the substrate S. FIG. The distance a in the horizontal direction to the edge is defined as the reference position and the outward direction of the substrate S as the reference position at the outer end edge of the substrate S, and is, for example, within a range of “−50 mm ≦ a ≦ + 50 mm”. Preferably, it is "a = + 5mm" in the range of "-10mm <= a <= 10mm", for example. Here, the negative sign of the distance a indicates that the airflow guide member 5 extends out from the upper surface side and overlaps with the substrate S side. In addition, in this example, it was set as "a = + 5mm", and it was made to guide member 5 so that the inner edge part of the guide member 5 may be located outside the upper position of the outer edge part of the board | substrate S. In the case where the adhered particles are peeled off, this is to be avoided as far as possible to fall on the substrate S surface.

In addition, the distance b of the height direction from the upper surface of the board | substrate S to the bottom surface of the airflow guide member 5 is, for example, "b = 110mm" in the range of "10mm <= b <= 200mm", for example. It is.

However, since the size of this opening part 501 becomes a parameter which adjusts the etching rate of the board | substrate S as shown to the experiment result mentioned later, this size is not limited to what was shown in this example. For example, an appropriate size is appropriately selected so that the in-plane uniformity of an etching process etc. can be improved based on the simulation result of a design stage, or the result of a preliminary experiment.

By providing the airflow guide member 5, a gas flow path 6 is formed between the bottom surface of the member 5 and the upper surface of the mounting table 3, and the etching gas supplied into the processing container 20 The exhaust path 24 is exhausted through the gas flow path 6.

In the space between the side surface of the mounting table 3 (shield ring 33) downstream of the gas flow passage 6 and the side wall portion 21, as shown in FIG. 1, for example, an aluminum member whose surface is anodized. The baffle plate 53 which is a plate material which consists of is arrange | positioned. As shown in FIG. 5, which is a plan view of the airflow guide member 5 with the airflow guide member 5 removed, the baffle plate 53 is an exhaust path provided on the bottom surface of the processing container 20 on the outer side of the four sides of the mounting table 3. It is arrange | positioned so that the whole surface of the opening part of 24 may be interrupted | blocked, and it controls the pressure loss of the gas flow path 6, and serves to make the etching speed of the direction along the outer periphery of the board | substrate S uniform.

The structure of the baffle plate 53 is not limited to the above-mentioned example, For example, as shown in FIG. 6, you may arrange | position two baffle plates 53a and 53b up and down. In the example shown in FIG. 6, the baffle plate 53a on the upper side is made of a punching plate provided with a punch hole in the front surface thereof, and the side surface of the mounting table 3 and the side wall portion 21 of the baffle plate 53a. While covering the front surface of the space therebetween, the baffle plate 53b on the lower side is not provided with a punch hole, and the front surface of the opening portion of the exhaust passage 24 is moved to the baffle plate 53b as shown in FIG. It is arranged so as to block.

Moreover, the fixed type rectification member 54 is provided around the mounting area of the board | substrate S in the mounting table 3 which concerns on this embodiment. 2 and 5, the rectifying member 54 is a "roza-shaped" frame body surrounding the board | substrate S on the mounting table 3, and is a mounting area of the board | substrate S, for example. It is arrange | positioned on the mounting base 3 so that a space may be enclosed. This opening part is comprised so that the inner wall surface of the rectifying member 54 may be located, for example about 5 mm outside from the outer edge of the board | substrate S mounted in the mounting area | region. Further, the rectifying member 54 constitutes a gap between the airflow guide members 5, and can transport the substrate S in the meantime, and the upper surface thereof is higher than the surface of the substrate S, and the substrate ( It is formed at the height which can surround S) and can form a gas fan around it, for example, the height of 10 mm. The rectifying member 54 is comprised by ceramics, for example, and makes the surface hard to peel off the adherend which adhered to the surface, for example, by making rough (rough arithmetic mean roughness) about 5 micrometers.

As shown in FIG. 1, the etching apparatus 2 is connected to the control unit 7. The control part 7 consists of a computer which has a CPU and a program which are not shown, for example, The action of the said etching processing apparatus 2, ie, the board | substrate S is carried in the process container 20, A group of steps (commands) related to the control and the like relating to the operation from the etching treatment to the unloading of the substrate S mounted on the mounting table 3 is combined. This program is stored in a storage medium such as a hard disk, a compact disk, a magnet optical disk, a memory card, and is installed in a computer there.

Hereinafter, the operation of the etching processing apparatus 2 according to the present embodiment will be described. When a user selects the process recipe of the objective etching process with respect to the control part 7 via the operation part which is not shown initially, the control part 7 makes a control signal to each part of the etching process apparatus 2 based on this process recipe. And a predetermined etching process is performed on the substrate in this way.

Specifically, for example, as shown in FIG. 7A, first, the gate valve 23 is opened, and the processing container 20 is opened by an external conveying means that does not show the substrate S on which an Al film is formed. ), And it is conveyed to the delivery position of the upper side of the mounting area of the mounting table 3. Then, the lift pins 34 are raised, the substrate S is received from the conveying means at the lift pins 34 at this transfer position, and the lift pins 34 are lowered to mount the boards S 3. ) Is mounted on the mounting area of the top. The conveying means which received the board | substrate S is exposed other than the processing container 20, the gate valve 23 falls, and the loading-in / out port 22 is closed.

Subsequently, as shown in FIG. 7 (b), the etching gas for etching processing, for example, chlorine gas, is discharged from the processing gas supply part 44 toward the substrate S, and at the same time, the interior of the processing container 20 is provided. The space is adjusted to a predetermined pressure. Then, high frequency power is supplied from the first and second high frequency power supply units 311 and 312 to the mounting table 3 to form a plasma in the space above the substrate S, and the main component shown in the following formula (1) is shown. The etching process is performed on the substrate S based on the reaction.

3C1 ₂ + 2Al → Al ₂ Cl ₆ ... (One)

At this time, for example, as shown in FIG. 8, the etching gas supplied from the gas shower head 40 descends the processing container 20 to reach the substrate S, and the etching process proceeds on the surface thereof. do. And etching gas flows along the surface of the board | substrate S to the periphery part side, and an airflow flows outward of the gas flow path 6 between the shield ring 33 (mounting stage 3) and the airflow guide member 5. You are guided.

In addition, the airflow guide member 5 is pushed toward the mounting table 3 side, so that the space between the side surface of the shield ring 33 and the side wall portion 21 is blocked from the gas shower head 40 side. For this reason, the etching gas supplied from the gas supply hole 45 at the outer end side of the gas shower head 40 and which has not reached the surface of the substrate S cannot flow directly into the space, and the airflow guide member 5 After the flow direction is changed by), it flows into the gas flow path 6.

And since the gas flow path 6 is narrow compared with the space between the gas shower head 40 and the mounting table 3, and all the etching gas supplied to the process container 20 flows into this gas flow path 6, The flow rate of the etching gas flowing into the gas flow passage 6 increases rapidly. Here, the etchant (active species contributing to etching) in the plasma contributes to the etching by reaching the substrate S and is consumed, while the unreacted etchant concentration not reaching the substrate S is in a high state. For this reason, the concentration gradient of an etchant is formed in the airflow which flows into the gas flow path 6, and an unreacted etchant tries to diffuse toward the periphery of the board | substrate S with low density | concentration. However, since the flow rate of the air flow toward the outside in the gas flow passage 6 is increased, it can flow this to the downstream side before the unreacted etchant reaches the substrate S. As a result, in the etching processing apparatus 2 which concerns on this embodiment, generation | occurrence | production of the loading based on diffusion of an etchant can be suppressed.

Here, since the flow rate of the gas flowing through the gas flow path 6 is different from the position close to the opening of the exhaust passage 24 shown in FIG. 5 and the position away from the opening, the etchant is the peripheral edge of the substrate S. The degree of spreading toward wealth changes. As a result, for example, the etching speed becomes uneven in the direction along the outer periphery of the substrate S so that the etching speed of the peripheral part of the substrate S becomes large at a position close to the opening, and the etching speed of the peripheral part becomes small at a distant position. I may throw it away. Therefore, as described with reference to FIG. 5, the pressure loss of the gas flow flowing into the exhaust passage 24 via the gas flow passage 6 is provided in front of the opening portion of the exhaust passage 24 according to the present embodiment. The baffle plate 53 for adjusting according to the position of the circumferential direction is provided. By the action of this baffle plate 53, the flow velocity of the gas flow flowing through the gas flow path 6 is made uniform, and a uniform etching rate can be obtained.

Next, the operation of the rectifying member 54 will be described. As also shown in the experimental results described later, in the case where the rectifying member 54 is provided, the difference in etching speed between the center portion and the peripheral portion of the substrate S is smaller than that in the case where the rectifying member 54 is not provided, so that occurrence of loading can be suppressed. It is. The reason for this can be estimated as follows. When the peripheral part of the board | substrate S mounted inside the rectifying member 54 is magnified, the etching gas (plasma) which flowed through the surface of the board | substrate S from the center side to the peripheral part is a board | substrate (as shown in FIG. 9). It collides once with the rectifying member 54 arrange | positioned around S), and flows along the surface of this rectifying member 54. As shown in FIG. The etching gas collides with the rectifying member 54 in this way, the flow of the etching gas is disturbed, and the gas amount of the etching gas supplied to the periphery of the substrate S is reduced, and the etching rate of the periphery is considered to be suppressed.

As described above, by providing the airflow guide member 5 and the rectifying member 54, the loading is suppressed, and the etching rate at the center portion and the periphery of the substrate S is almost uniform, resulting in high in-plane uniformity. It becomes possible to perform the etching process of Al film in the secured state. When the etching process is performed for a predetermined time based on the process recipe, the supply of the etching gas and the high frequency electric power is stopped, the pressure in the processing container 20 is returned to its original state, and then the substrate S is reversed in the reverse order. ) Is transferred from the mounting table 3 to an external conveying means and carried out from the etching processing apparatus 2 to complete a series of etching processes.

According to the etching apparatus 2 which concerns on this embodiment, there exist the following effects. In supplying and processing a processing gas from above the board | substrate S on the mounting table 3, the airflow guide member (in accordance with the circumferential direction of the mounting table 3 above the peripheral part of the mounting table 3) 5) is arranged, and the air flow is guided outwardly between the periphery of the periphery and exhausted from the periphery of the mounting table 3. For this reason, unreacted process gas which does not reach | attain the board | substrate S is exhausted with the said airflow, and it becomes difficult to diffuse this process gas at the periphery of the board | substrate S on the mounting table 3, and suppresses generation | occurrence | production of loading. This can improve the in-plane uniformity of the treatment.

Moreover, since the lifting type rectifying member 17 which has been conventionally employed is not employed as a method of suppressing the loading, there is a low possibility that particles are generated due to the lifting operation of the rectifying member 54, and the substrate S Contamination and the like can be suppressed. Thereby, since the frequency of performing maintenance of chloride removal of Al that requires a long time can be reduced, the operation rate of the etching apparatus 2 can be improved, and the throughput can be improved.

In addition, the structure of the airflow guide member 5 is not limited to what was shown in embodiment mentioned above. For example, as shown to Fig.10 (a), the space above the periphery of the mounting table 3 may be filled with a rectangular annular member, for example, and this may be used as the airflow guide member 5a. Moreover, as shown to FIG. 10 (b), the side wall part 21 of the processing container 20 is bent, and the inner wall surface of this processing container 20 is pushed to the upper part of the periphery part of the mounting table 3, The inner wall surface may be used as the airflow guide member 5b.

Moreover, as also shown in the simulation result mentioned later, the airflow guide member from the horizontal distance a from the outer end edge of the board | substrate S to the inner end edge of the airflow guide member 5, or the upper surface of the board | substrate S is shown. The distance b in the height direction to the bottom surface is a parameter for adjusting the etching rate. Thus, for example, as shown in FIG. 11 (a), the width of the airflow guide member 5c is changed to locally protrude inward, or it is recessed outward so that the distance a is the substrate S. You may change it according to the circumferential direction. As shown in FIG. 11B, the distance b may be changed by varying the height of the airflow guide member 5d in accordance with the position in the circumferential direction of the substrate S. As shown in FIG. By these measures, the etching rate can be adjusted, for example, equalizing the etching rate in the peripheral part of the board | substrate S with respect to the direction along the outer periphery of the board | substrate S. Here, the adjustment of the width and height of the airflow guide members 5c and 5d is not limited to the case of continuously changing them as shown in Figs. 11 (a) and 11 (b) and may be changed discretely. It goes without saying that the width and height of the airflow guide member may be changed.

In addition, it is preferable that the outer end edges of the plate materials 51 and 52 constituting the airflow guide member 5 and the inner wall surface of the side wall portion 21 are fixed in close contact, A gap of, for example, several mm may exist between them. When the gap is sufficiently small as compared with the opening 501 of the technique, most of the etching gas supplied into the processing container 20 flows out through the opening 501 to obtain the same effect as in the above-described embodiment.

Moreover, in embodiment, the airflow guide member 5 is arrange | positioned immediately above the carrying-in / out port 22 of the board | substrate S, and the board | substrate S is conveyed through between the mounting table 3 and the airflow guide member 5. Although it is comprised, you may arrange | position the airflow guide member 5 below the carry-in / out port 22. FIG. In this case, the board | substrate S will convey the space above the airflow guide member 5, and will receive it between the mounting tables 3 via the opening part 501 at the time of lifting.

Moreover, the processing apparatus of this invention is applied not only to the etching process of an aluminum film but also to the etching of metal films, insulating films, and semiconductor films, such as aluminum alloy, titanium, and a titanium alloy, or these laminated films. Moreover, it can apply to the process which performs a process with respect to a to-be-processed object using other process gas, such as ashing and chemical vapor deposition (CVD) other than an etching process. In addition, a process is not necessarily limited to a plasma process and may be other gas processes. The object to be processed is not limited to the rectangular substrate, but may be a semiconductor wafer or the like in addition to the FPD substrate.

Subsequently, another embodiment will be described with reference to FIGS. 12 to 16. In these drawings, the same code | symbol as shown in FIGS. 1-9 is attached | subjected to the component like the etching process apparatus 2 which concerns on embodiment of a technique.

The etching processing apparatus 2a which concerns on this embodiment enables the airflow guide member 5 to be elevated up and down, and the embodiment of the technique which fixed the copper member 5 to the inner wall surface of the processing container 20, and different. Even when the in-plane uniformity of the etching rate is almost the same as shown in the experiments described later, the occurrence of loading depends on the difference in the distance in the height direction from the upper surface of the substrate S to the bottom surface of the airflow guide member 5. You can see the car on the degree. Therefore, as shown in FIG. 12, FIG. 13 (a), and FIG. 13 (b), the etching process apparatus 2a which concerns on this embodiment is used for each board | plate material 51 and 52 which comprises the airflow guide member 5, respectively. For example, the bottom end of both ends is supported by the supporting rod 55, and the base end side of each of the supporting rods 55 is moved up and down via the elevating plate 57 provided outside the processing container 20. ), The entire airflow guide member 5 can be lifted in the vertical direction to change the distance in the height direction to the substrate S. As shown in FIG. The bellows 58 covers the supporting rod 55 in a state of being connected between the bottom surface of the processing vessel 20 and the elevating plate 57, and a portion in which the supporting rod 55 penetrates the processing vessel 20. By sealing the powder serves to maintain the degree of vacuum in the processing container (20).

Moreover, also regarding the etching processing apparatus 2a which concerns on this embodiment, although the baffle plate 53 and the exhaust path 24 are provided in the same position as the etching processing apparatus 2 shown in FIG. 1, for example, For convenience of illustration, these descriptions are omitted in FIGS. 12 to 16.

As described in the experimental results described below, the inventors have confirmed that there is an appropriate value in the distance in the height direction from the substrate S to the airflow guide member that can minimize the occurrence of loading. Therefore, in the etching processing apparatus 2a according to the present embodiment, for example, preliminary experiments or the like, differences in processes such as processing gas and etching target film, that is, the airflow that can suppress the generation of the loading in the smallest amount depending on the type of processing. The height position of the guide member 5 is grasped | ascertained beforehand. And information regarding these suitable height positions is stored in the memory | storage part 72 of the control part 7 as one information of the process recipe 73 with processing conditions as shown, for example in FIG. And when the user selects the process recipe 73 via the operation part 74 at the start of operation of the etching processing apparatus 2a, for example, the CPU 71 will inform the information in the process recipe 73 based on this selection. Is read out and a control signal is output to the lifting mechanism 56 so as to be the height position of the airflow guide member 5 most suitable for the process.

Thus, in the etching processing apparatus 2a which concerns on this embodiment, since the airflow guide member 5 is comprised so that an up-down direction is possible, the appropriate height position of the airflow guide member 5 in a process is processed, for example. It may become the same height as the carry-in / out port 22 of the container 20, and may interfere with the conveyance of the board | substrate S. FIG. Therefore, the etching processing apparatus 2a which concerns on this embodiment has the board | plate material (51 or less, 51a coded for identification) facing the loading / exit opening 22, for example as shown to FIG. 13 (b). It is possible to move up and down independently of the other three sheets 51 (same as 51b), 52. For example, when the substrate S is brought in and out, it is constructed to be evacuated to the lower side of the loading and exit 22. do.

Here, although the direction in which the board | plate material 51a is evacuated is good also from the upper side of the carry-in / out port 22, the carry-in / out port 22 from a viewpoint which prevents the particle peeled off from the board | plate material 51a from falling to the surface of the board | substrate S during carrying in / out. It is preferable to evacuate to the lower side of), ie, the lower side of the conveyance path | route of the board | substrate S. FIG. As shown in FIG. 12, the edge of the side wall portion 21 side of the plate 51a extends downward to be parallel to the side wall portion 21, and the plate 51a is raised when the substrate 51a rises. At the time of the process of S), the airflow control part 511 which covers the carry-in / out port 22 is provided. When there is no airflow restricting portion 511, the etching gas above the plate 51a falls into the lower side (exhaust path 24 side) through the gap between the plate 51a and the inlet / outlet 22. Since the etching gas supplied to the surface of the board | substrate S goes out and runs out, this airflow control part 511 is made to restrict | eliminate escape of etching gas.

Next, the effect | action of the etching process apparatus 2a which concerns on this embodiment is demonstrated. Now, when a user selects a process recipe about the start of operation of the etching processing apparatus 2a, the data regarding the appropriate height position of the board | plate material 51 (51a, 51b) 52 corresponding to this process is read out, and FIG. As shown in (b), the three board members 51b and 52 which are not adjacent to the carry-in / out port 22 are height-adjusted by the elevating mechanism 56 based on the read data. On the other hand, the remaining sheet 51a facing the carry-in / out port 22 descends below the carry-in / out port 22 to a height position which is not in contact with the rectifying member 54 on the mounting table 3, for example. It waits in the position which does not interfere with the board | substrate S carried in (FIG. 15 (a)).

Subsequently, the gate valve 23 is opened, the arm 81 of the external conveying apparatus 8 is extended, and the board | substrate S is carried in to the water delivery position in the processing container 20 via the carrying-in / out port 22 (FIG. 15 (b)], the lift pin 34 is raised to receive the substrate S on the lift pin 34 (Fig. 15 (c)). Then, the arm 81 is retracted out of the processing container 20 (Fig. 16 (a)), the lifting pin 34 is lowered to mount the substrate S on the mounting table 3, and at the same time the gate valve 23 ) (FIG. 16 (b)) and the board | plate material 51a which was retracted below the carrying-in / out port 22, for example, as shown in FIG. 13 (a) of another 3 sheets 51b, 52 After raising to a height position such as), the etching process is performed in the same order as the etching processing apparatus 2 according to the embodiment of the technique.

At this time, as shown in FIG. 16 (c), when the plate material 51a performs the etching process at the same height position as the carry-in / out port 22, the airflow restricting portion provided on the end edge side of the plate material 51a ( Since the 511 starts to extend to the lower side than the lower edge of the carry-in and outlet 22 and is in the state which covered this area | region, this airflow control part 511 makes it between the board | plate material 51a and the carry-in / out port 22. FIG. The gap formed is blocked. As a result, the flow of the etching gas which exits from the upper side of the plate 51a to the exhaust path 24 side through the gap is regulated, and the etching gas flows through the opening 501 of the airflow guide member 5 of the technique. Thereby, etching process is performed in the state in which the said etching gas spreaded over the surface of the board | substrate S. FIG. When the etching process is finished, the supply of the etching gas and the supply of the high frequency power are stopped, and the substrate S is taken out in the reverse order to carry-in, and a series of operations are completed.

The etching effect apparatus 2a which concerns on this embodiment has the following effects. By enabling the height position of the airflow guide member 5 (plate materials 51, 51a, 51b, 52) to be adjusted, the distance in the height direction from the top surface of the substrate S to the bottom surface of the airflow guide member 5 is adjusted. It can change according to the process conditions (process conditions) of an etching process. As a result, the etching process can be performed under conditions in which the height of the airflow guide member 5 is adjusted to an appropriate position, for example, a position where the degree of occurrence of loading becomes smallest on the simulation.

In addition, the air flow guide member is capable of lifting up and down independently of the other three sheets 51b and 52 of the plate material 51a (airflow guide member 5) facing the carrying in and out ports 22 of the substrate S. Even when the proper height position of (5) becomes a position which interferes with the board | substrate S to carry in / out, only the board | plate material 51a adjacent to the said loading / exit opening 22 can be retracted. In this case, it consumes less energy than when the whole airflow guide member 5 (four sheets 51b, 52) is retracted.

In addition, the remaining three sheets 51b and 52 may be raised as one of these three sheets, or may be raised independently of each other. Further, the present invention is not limited to the example in which only the plate material 51a adjacent to the carry-in / out port 22 can be independently lifted up and down, and the entire air flow guide member 5 (four pieces of plate material 51 at the time of carrying in and out of the substrate S). , 52)] may be integrated into the structure, for example, to retreat downward.

Moreover, when the board | plate material 51a is retracted to the lower side of the carrying-in / out path | route of the board | substrate S, compared with the case where it retracts to the upper side, the problem of particle | grains falling to the board | substrate S in conveyance is unlikely to arise. In addition, although the airflow guide member 5 which concerns on this embodiment becomes the structure which can be raised and lowered, unlike the rectifying member 17 of the conventional form shown in FIG. 27, the airflow guide member 5 is mounted on the mounting table 9 It is not mounted directly. Therefore, a product is formed in the gap between these airflow guide members 5 and the mounting table 3, and when the airflow guide member 5 is raised, the trouble that the product comes off and falls on the substrate S is unlikely to occur. It is made up.

EXAMPLE

(Simulation 1)

The etching processing apparatus 2 model was created, and the flow of the gas in the processing container 20 in the case where the airflow guide member 5 was provided in the processing container 20, and when not providing it was simulated. The etching apparatus 2 model is a model in which the space in the processing container 20 above the surface of the substrate S mounted on the mounting table 3 is divided into four at the position of the dashed-dotted line shown in FIG. 3. Adopted. The etching gas was supplied from the gas shower head 40 provided in the upper part of the space of this divided model, and the flow of the said gas in the process container 20 was simulated. The etching gas supply amount to the model space was 150 [sccm] and the pressure was 4.0 [Pa] (0.03 [torr]). In addition, a rectifying member 54 having a height of 10 [mm] is disposed around the substrate S. FIG.

 A. Simulation Conditions

(Example 1)

Simulation was performed about the flow of the gas in the processing container 20 when the airflow guide member 5 was provided. Arrangement conditions of the airflow guide member 5 were as follows.

The horizontal distance a (see FIG. 4) from the outer end edge of the substrate S to the inner end edge of the airflow guide member 5; 5 [mm]

Distance b in the height direction from the upper surface of the substrate S to the bottom surface of the airflow guide member 5 (see FIG. 4); 11O [mm]

(Comparative Example 1)

Simulation was performed about the flow of the gas in the processing container 20 when the airflow guide member 5 was not provided.

B. Simulation Results

The result of (Example 1) is shown in FIG. 17 (a), and the result of (Comparative Example 1) is shown in FIG. 17 (b). 17A and 17B show three-dimensionally a streamline of the etching gas supplied from the gas shower head 40 into the model space.

According to the result of (Example 1) shown to Fig.17 (a), most of the etching gas supplied in the processing container 20 falls to the position of the mounting area of the board | substrate S, and thereafter, airflow guide It is exhausted to the outside through the narrow gas flow path 6 between the member 5 and the mounting table 3. Thereby, it turns out that the gas streamline of the gas above the periphery of the board | substrate S near the inlet part of the said gas flow path 6 becomes dense, and the flow velocity of the gas in this position becomes large. According to the simulation result, the flow rate of the etching gas in the said site | part was about 1.0 [m / s] or more.

On the other hand, in the result of the (comparative example 1) shown to FIG. 17 (b), a part of gas supplied to the processing container 20 flows in the vicinity of the side wall part 21 of the processing container 20, and the board | substrate S of It exhausts without passing through the mounting area side. In addition, since the flow path of the gas does not become narrow with respect to the gas which reached | attained the board | substrate S, the streamline of the gas above the periphery of the board | substrate S is poor compared with (Example 1), The flow velocity at that position is small. According to the simulation result, the flow rate of the etching gas in the said site | part was about 0.05-0.5 [m / s], and was the numerical value of less than half of (Example 1).

From the above fact, by providing the airflow guide member 5 in the processing container 20, the flow velocity of the etching gas in the inlet part of the gas flow path 6 and in the vicinity of the periphery of the board | substrate S can be enlarged. I knew that.

(Simulation 2)

The flux distribution of the etching gas in the processing container 20 was simulated in consideration of the influence of the reaction and diffusion of the etching gas Cl ₂ and aluminum (Al) on the substrate S surface. The size of the processing vessel 20 model, the supply amount of the etching gas, and the pressure are the same as in (simulation 1).

A. Simulation Conditions

(Example 2)

The simulation was performed about the processing container 20 provided with the structure similar to (Example 1).

(Comparative Example 2)

The simulation was performed about the processing container 20 provided with the structure similar to (comparative example 1).

B. Simulation Results

In the simulation, simulation results regarding the flux distributions of the etching gas (Cl ₂ ), the aluminum chloride gas (Al ₂ Cl ₆ ) generated by the reaction of the etching gas and aluminum, and their total gases were obtained.

Among these, the result regarding etching gas is shown to FIG. 18, FIG. Fig. 18 (a) shows the result of plotting the flux distribution on the basis of the number of chlorine molecules at the cross-sectional position of the model space by the vector display based on the simulation result of (Example 2), and Fig. 18 (b). ) Shows the same result for (Comparative Example 2). The direction of the arrow in these figures shows the direction of the flux at the starting position of the arrow, and the length of the arrow shows the amount of flux [piece / m ² · s] at the position. The longer the flux is, the larger the flux is. 19 is a result of plotting the flux amount distribution of the etching gas consumed on the surface of the substrate S by reaction with aluminum, and the horizontal axis shows the distance in the X-axis direction from the point 0 shown in FIG. Doing. In addition, the numerical value attached to the horizontal axis | shaft of FIG. 18 has shown the relative distance from the said 0 point when the width | variety of the mounting table 3 is set to one. In addition, the result of (Example 2) is shown by the solid line in FIG. 19, and the result of (Comparative Example 2) is shown by the broken line.

According to the result of (Example 2) shown to Fig.18 (a), in the vicinity of the surface of the board | substrate S, etching gas is substantially the same from the upper side (shower head 40 side) with respect to the X direction. It is moving toward S). On the other hand, according to the result of the (comparative example 2) shown to FIG. 18 (b), the flux from the side wall part 21 side of the processing container 20 toward the peripheral part side of the board | substrate S was confirmed. More specifically, in Fig. 18 (a) and Fig. 18 (b), the directions and the sizes of the arrows in the areas enclosed by the circles are compared, and the substrate (in Comparative Example 2) without the airflow guide member 5 is provided. The presence of the flux of the etching gas toward the periphery side of S) can be observed, and it is well expressed that such movement of the etching gas is a factor, causing loading.

Therefore, based on FIG. 19, the flux amount distribution of the etching gas consumed on the surface of the substrate S is compared between (Example 2) and (Comparative Example 2). The flux amount gradually decreases as it goes from the center (zero point) to the periphery, and a profile in which the flux amount rises again near the periphery of the substrate S is drawn. However, in (Comparative Example 2), the minimum value of the flux amount near the distance "X = 310 to 330 [mm]" from the center and the maximum value at the outer edge of the substrate S differ about two or more times. On the other hand, in the case of (Example 2), the fluctuation amount of the flux amount is about 30% of the minimum value fluctuation, and it is only a relatively gentle change. Also from the above comparison, by providing the airflow guide member 5 in the processing container 20, the amount of etching gas supplied to the surface of the substrate S is made uniform, and the etching rate can be made uniform to improve the in-plane uniformity of the etching treatment. It can be seen that.

(Experiment 1)

The etching processing apparatus 2 provided with the processing container 20 which has the structure similar to each Example of (Simulation 1, 2) and a comparative example is created, and the aluminum film formed in the surface of the board | substrate S is performed, The difference of the etching rate distribution and in-plane uniformity with or without the airflow guide member 5 was investigated.

A. Experimental Conditions

The substrate S (length 680 [mm] × width 880 [mm]) having an aluminum film formed thereon was mounted on the mounting table 3 in the processing container 20 having the same configuration as in Example 1 of the technology. The etching gas is provided with four exhaust paths provided on the bottom wall of the {etching gas supply amount 600 [sccm] and pressure 4.0 [Pa] (0.03 [torr])} processing vessel 20 supplied under the same conditions as in Example 2. The baffle plate 53 was arrange | positioned at the front surface of (24). In addition, the high frequency power supplied to the mounting table 3 serving as the lower electrode has a power of 13.56 [MHz] applied by the first high frequency power supply unit 311 for generating plasma and 5.5 [kW] for ion incorporation in the plasma. The power applied at the second high frequency power source 312 (3.2 [MHz]) is 1 [kW].

(Example 3)

The etching process is performed using the processing container 20 provided with the airflow guide member 5 (a = 5 [mm], b = 110 [mm]) similar to the (Example 1), and the distribution of the etching rate is adjusted. Investigated. The etching rate measured the etching rate with respect to a total of 21 points using the position of the black circle "(circle)" arrange | positioned on the top view of the board | substrate S shown in FIG. 20 as a measurement point, and calculated | required the in-plane uniformity. The numerical value written along the horizontal of each measurement point shows the (x, y) coordinate position of each point when the lower left end of the board | substrate S is made into "0 point." In addition, the uniformity of the etching rate was computed based on the following (2) formula.

In-plane uniformity [%] = [{(E / R) _MAX- (E / R) _MIN } / {(E / R) _MAX + (E / R) _MIN }] × 100 (2)

However, (E / R) _MAX ; Maximum value of etching rate [Å / min]

(E / R) _{M 1 N} ; This is the minimum value of the etching rate [ms / min].

(Comparative Example 3)

As in (Comparative Example 1), the etching process is performed using the processing container 20 without the airflow guide member 5, and the distribution of the etching rate is measured with respect to the measurement point as described above (Example 3). Investigated.

B. Experimental Results

The result of (Example 3) is shown in FIG. 21 (a), and the result of (Comparative Example 3) is shown in FIG. 21 (b). In each figure, the etching speed [ms / min] measured by the said measurement point is shown in the position corresponding to the measurement point shown with the black circle | round | yen in FIG.

According to the result of (Example 3) shown in Fig. 21A, the etching rate distribution on the surface of the substrate S has a large etching rate at the center of the substrate S and moves toward the peripheral edge of the substrate S. In this case, the etching rate decreases, the etching rate is maximized at the periphery of the substrate S, and almost coincides with the flux amount distribution of the etching gas supplied to the surface of the substrate S shown in FIG. 19 (Example 2). Results are obtained. And the average value of the etching rates in all these measurement points was 3520 [dl / min], and uniformity was 7.2 [%].

On the other hand, according to the result of (Comparative Example 3) shown in Fig. 21B, the etching rate was large in the center of the substrate S and moved to the peripheral edge side of the substrate S as in the case of (Example 3). As a result, the etching rate decreases, the etching rate distribution at which the etching rate is maximized at the periphery of the substrate S is confirmed, and a result almost identical to the flux amount distribution shown in (Comparative Example 2) of FIG. 19 is obtained. have. The average value of the etching rates in these measurement points as a whole was 3160 [dl / min] and uniformity was 17.0 [%], while the average value of the etching rates fell, and uniformity deteriorated.

Thus, when (Example 3) and (Comparative Example 3) are compared, since the (Example 3) side can perform the etching process with high uniformity, the airflow guide member 5 in the process container 20 is carried out. It can be seen that providing a is an effective means of suppressing the occurrence of loading. Further, from the experimental results of (Example 3), since the average etching rate was increased, it was found that when the etching depths were the same, the effect of shortening the processing time could be obtained by providing the airflow guide member 5. This etching gas, which has conventionally been exhausted through the side wall portion 21 side without reaching the surface of the substrate S, passes through the vicinity of the surface of the substrate S by providing the airflow guide member 5. S) It is considered that the amount of etching gas supplied to the whole increased.

(Experiment 2)

The distance a in the horizontal direction from the outer end edge of the substrate S to the inner end edge of the airflow guide member 5 is varied so that the relationship between the placement position of the outer end edge of the airflow guide member 5 and the etching rate is achieved. Investigated. The etching gas supply amount, the pressure in the processing container 20, the supply concentration of the etching gas, and the supply conditions of the high frequency electric power are the same as in (Experiment 1). In addition, the distance of the height direction from the upper surface of the board | substrate S to the bottom surface of the airflow guide member 5 was fixed at "b = 110mm".

A. Experimental Conditions

(Example 4) It was set as "a = -45mm" (position of 45 mm inside from the outer edge of the board | substrate S). Measurement points include A point (center position), B point (middle position), C2 point (corner slightly inner position), D1 point (first peripheral position), and D2 point (second peripheral position) shown in FIG. , A total of 6 points of D3 points (third peripheral position) were measured, and in-plane uniformity was determined based on the formula (2).

(Example 5) It was set as "a = + 5 mm" (a position of 5 mm outside from the outer edge of the board | substrate S). The measurement point was the same as that of (Example 4).

(Example 6) It was set as "a = + 40mm" (the position of 40mm outside from the outer edge of the board | substrate S). The measurement point was the same as that of (Example 4).

B. Experimental Results

22 shows the results of the (Example 4) to (Example 6). The horizontal axis | shaft of FIG. 22 has shown the distance "a [mm]" from the outer edge part of the board | substrate S, and the vertical axis | shaft on the left side shows the etching rate [mm / min]. Corresponding to these axes, the etching speed of each embodiment is indicated by the circle A at the center (center position) of white circle "O", the point B (the middle position) of black circle "●", and the C2 point (a little inner corner). Plotted with a white triangle "Δ". In addition, about the etching speed of D1-D3 point (1st-3rd peripheral position), the minimum value and the maximum value are plotted by the horizontal bar "-", respectively, and the range display which enclosed them by the vertical line is shown.

In addition, the vertical axis | shaft of the right side showed in-plane uniformity [%], and the result of each Example is plotted by X display "x".

According to the results of (Example 4) to (Example 6), the distance from the outer end edge of the substrate S to the inner end edge of the airflow guide member 5 is the best in (Example 5), which is the shortest. Uniformity was obtained. On the other hand, in (Example 4) in the state where the airflow guide member 5 is pushed out so as to cover the substrate S, the etching rates of the point A and the point B on the center side increase as compared with the (Example 5). On the other hand, the etching rate decreased at the C2 point and the D1 to D3 points on the peripheral part side. This is because the airflow guide member 5 is pushed out to the periphery of the substrate S, so that the etching gas supplied from the gas shower head 40 and descended is blocked by the airflow guide member 5 and the substrate in this region. It is thought that the etching rate is lowered because the surface (S) cannot be reached directly, while the amount of etching gas reaching the surface of the substrate S on the center side increases, and the etching rate is increased.

Here, when the airflow guide member 5 is pushed toward the substrate S side, for example, about "a = -10 mm", the influence of the blocking of the etching gas by the airflow guide member 5 can be almost ignored. If it is in the range of "-10 mm≤a≤ + 10mm", the uniformity of the etching rate is considered to be the best as in (Example 5).

In addition, in (Example 6) in which the inner end edge of the airflow guide member 5 is 35 mm further outward than the outer end edge of the board | substrate S compared with (Example 5), point A and B of a center side The etching rate of the dot was lowered, and the etching rate was increased at the C2 point and the D1 to D3 points on the peripheral part side, and a phenomenon opposite to that of (Example 4) was observed. As the inner end position of the airflow guide member 5 is farther from the substrate S, the effect of providing the airflow guide member 5 is deteriorated, and it is considered that the effect of loading is increased.

According to the experimental results of (Example 4) to (Example 6), the horizontal distance a from the outer end edge of the substrate S to the inner end edge of the airflow guide member 5 is changed. It turns out that the etching rate of the center side and the peripheral part side of the board | substrate S can be adjusted by this. Thus, for example, when there is a difference in etching speed in the direction along the outer circumference of the substrate S when the airflow guide member 5 shown in FIG. 2 is used, as illustrated in FIG. 11A. It was confirmed that it is also an effective means to employ the airflow guide member 5c of the type which locally protrudes inward or recesses outward in accordance with the position where the gap has occurred.

(Experiment 3)

The same data as (Experiment 2) was investigated using the etching processing apparatus 2 of the type which is not equipped with the rectifying member 54 on the mounting table 3. As shown in FIG. Each experimental condition other than this is the same as (Experiment 2).

A. Experimental Conditions

(Example 7)

The etching rate and the in-plane uniformity of the etching treatment were examined at the same experimental conditions and measurement points as in Example 4.

(Example 8)

In the same experimental conditions (Example 5) and the measurement point, the etching speed and the in-plane uniformity of the etching treatment were examined.

(Example 9)

From the same experimental conditions (Example 6) and the measurement point, the etching rate and the in-plane uniformity of the etching treatment were examined.

B. Experimental Results

23 shows the results of the (Example 7) to (Example 9). The meanings of the horizontal axis, the left and right vertical axis, and each plot are the same as in FIG. 22.

According to the results of (Example 7) to (Example 9), the tendency of the change of the etching rate of each measurement point of the shape of the substrate S in response to the change of the distance a is provided with the rectifying member 54 ( The same results as in Example 4) to (Example 6). However, in any of (Example 7) to (Example 9), the results of experiments under the same conditions in which the distance a in (Example 4) to (Example 6) in which the rectifying member 54 was provided was the same. In comparison with each other, in-plane uniformity of the etching treatment is deteriorated. From this result, it can be said that the rectifying member 54 has an effect of suppressing deterioration of in-plane uniformity caused by the occurrence of loading.

(Experiment 4)

The distance b of the height direction from the upper surface of the board | substrate S to the bottom surface of the airflow guide member 5 was changed, and data similar to (Experiment 2) was investigated. Each experimental condition is the same as (Experiment 1). In addition, the distance in the horizontal direction from the outer edge edge of the substrate S to the inner edge edge of the airflow guide member 5 was fixed at "a = + 5 mm".

A. Experimental Conditions

(Example 10) It was set as "b = 50mm." The measurement point was the same as that of (Example 4).

(Example 11) "b = 110mm" was set. The measurement point was the same as that of (Example 4).

B. Experimental Results

24 shows the results of the (Example 10) and (Example 11). The instructions on the horizontal axis, the left and right vertical axis, and the plots are the same as in FIG. 22.

According to the results of (Example 10) and (Example 11), even if the height of the airflow guide member 5 was changed, in-plane uniformity of the etching rate did not change significantly in the range of 50 mm to 110 mm. On the other hand, when looking at each measurement point, in (Example 11) where distance b is large, the etching rate is high at A-point and B-point on the center side, and the etching rate falls at C2 point on the peripheral side side, The etching rate is increasing again at points D1 to D3. It can be said that this shows the etching rate distribution consistent with the flux amount distribution of the etching gas in the vicinity of the surface of the substrate S when the airflow guide member 5 shown in FIG. 19 is not provided. From this fact, it is also considered that when the position of the airflow guide member 5 is gradually increased to increase the distance b, the effect of providing the airflow guide member 5 gradually decreases, and the effect of loading gradually appears. . From such considerations, when there is a difference in etching speed in the direction along the outer circumference of the substrate S when the airflow guide member 5 shown in FIG. 2 is used, as illustrated in FIG. 11B, It is also considered to be an effective means to employ 5d of airflow guide members having different heights depending on the position where the gap has occurred. For example, instead of lowering the airflow guide member 5d further, the two parameters may be changed in combination such as increasing the width of the airflow guide member 5d to increase the distance a.

(Experiment 5)

The retest of (Experiment 4) was performed by changing the distance of the height direction from the upper surface of the board | substrate S to the bottom surface of the airflow guide member 5 to three patterns. At this time, in order to evaluate the degree of occurrence of loading, in addition to the six points (A point, B point, C2 point, D1 point to D3 point shown in Fig. 20) measured in (Example 4) of the technique, C1 The point (slightly inner side of 1st peripheral position) and C3 point (slightly inner side of 3rd peripheral position) were made into a measurement point. In-plane uniformity was calculated | required based on Formula (2) of description, and the index value was calculated | required based on the following Formula (3) as an index (henceforth a "loading index") which evaluates the generation | occurrence | production degree of loading.

AVE _{D1 ~ D3} -AVE _{c1 ~ c3} / AVE _{D1 ~ D3} + AVE _{c1 ~ c3} ... (3)

However, AVE _{D1 to D3} ; Average value of the etching rates of D1 to D3 points [ms / min]

AVE _{c1 ~ c2} ; It is an average value [cc / min] of the etching rate of C1 point-C3 point.

Each experimental condition is the same as (Experiment 1). In addition, the distance in the horizontal direction from the outer edge edge of the substrate S to the inner edge edge of the airflow guide member 5 was fixed at "a = + 5 mm".

A. Experimental Conditions

(Example 12) It was set as "b = 17mm."

(Example 13) It was set as "b = 50mm."

(Example 14) It was set as "b = 117 mm."

B. Experimental Results

25 shows the results of the (Example 12) to (Example 14). The contents of the horizontal axis, the vertical axis on the left and right sides, and the indications of the respective plots are the same as in FIG. 22, and the loading indexes were plotted with a white square "□".

According to the experimental results shown in FIG. 25, when attention was paid to in-plane uniformity, no remarkable difference was observed between (Example 13) and (Example 14), and these Examples and experimental conditions were almost equivalent, (Example 10), it can be said that the reproducibility of the result (see FIG. 24) of (Example 11) could be confirmed. On the other hand, in the case where the distance in the height direction was minimized (Example 12), in-plane uniformity deteriorated to twice or more than other examples.

Next, focusing on the loading index, the loading index is the average value "AVE _D1-D3 " of the etching rate of the D1 point-D3 point of a peripheral position from the formula (3), and C1 point-C3 point a little inside of these measurement points. The average value of the etch rates of AVE _{c1 to c3} is compared, and when the etch rate of the peripheral edge is large, that is, when the effect of the loading effect is seen, a positive value is taken. Takes a negative value if the opposite occurs. Also, the larger the difference between these average speeds, the larger the absolute value of the loading index.

From these viewpoints, when the loading index values of (Example 12) to (Example 14) are examined, the index values are positive values in each of the examples, and although there is a difference in degree, the occurrence of loading in both examples Was observed. Therefore, when the numerical values of the loading indexes of each of these examples were compared, the index value of (Example 13) was the lowest (1.7%). On the other hand, (Example 14) had a loading index value of about 4 times (6.9%), although there was no significant difference from (Example 13) in in-plane uniformity. In addition, in Example 12, which had the worst in-plane uniformity, the loading index value was about 7 times that of (Example 13). (11.9%)

From these results, as shown in FIG. 25, when the height position of the airflow guide member 5 is gradually raised from the vicinity of the substrate S on the mounting table 3, the numerical value of the loading index is below the minimum value. By drawing a convex curve, it was confirmed that a distance in the proper height direction exists to minimize the occurrence of loading.

Considering the reason why such a phenomenon occurs, for example, when the height position of the airflow guide member 5 is too low as in (Example 12), as shown schematically in Fig. 26 (a). Since the position where the airflow guide member 5 is disposed is too close to the substrate S on the mounting table 3, for example, an unreacted etchant remaining above the airflow guide member 5 diffuses. The time required to reach the periphery of the substrate S is short. For this reason, it is estimated that an unreacted etchant reaches the periphery of the board | substrate S before flowing to the downstream side by the flow in the gas flow path 6, and the influence of a loading effect will appear remarkably.

On the other hand, when the height position of the airflow guide member 5 is too high as in Example 14, since the flow velocity of the airflow flowing through the gas flow path 6 is slow, for example, as shown in FIG. 26 (b). Similarly, it is thought that the effect of the loading effect is increased by relatively increasing the effect of the unreacted etchant diffusing toward the periphery of the substrate S on the upper side of the flow.

In the case of (Example 13) from the above consideration, the airflow guide member 5 is not too close to the board | substrate S on the mounting table 3, and the flow velocity of the airflow formed in the gas flow path 6 is too slow. It is thought that the unreacted etchant is in a state where it is hard to reach the periphery of the substrate S by diffusion. This is the reason that when the distance of the height direction from the upper surface of the board | substrate S to the bottom surface of the airflow guide member 5 is changed, there exists a suitable distance which can suppress generation | occurrence | production of the loading to the minimum. The etching is performed by adjusting the height position of the airflow guide member 5 configured to be able to move up and down so that the distance in the height direction is an appropriate value that has been grasped in advance so that the in-plane uniformity is high and the loading influence is small. It becomes possible to execute the process.

1 is a longitudinal sectional view showing a configuration of an etching processing apparatus according to an embodiment of the present invention;

2 is a perspective view showing a structure inside a processing vessel of the etching apparatus;

3 is a plan view showing a structure inside the processing container;

4 is an enlarged longitudinal sectional view showing a structure inside the processing container;

5 is a second plan view showing a structure inside the processing container;

6 is an enlarged longitudinal sectional view showing a modification of the baffle plate provided in the processing container;

7 is a longitudinal sectional view showing the action of the etching processing apparatus;

8 is an enlarged longitudinal sectional view showing the action of an airflow guide member provided in the processing container;

9 is an enlarged longitudinal sectional view showing the action of a rectifying member provided inside the processing container;

10 is an enlarged longitudinal sectional view showing another embodiment of the airflow guide member;

11 is a perspective view showing still another embodiment of the airflow guide member;

12 is a longitudinal sectional view of an etching processing apparatus according to another embodiment;

13 is a perspective view showing a structure inside a processing container of the other etching processing apparatus;

14 is a block diagram showing an electrical configuration of the other etching processing apparatus;

15 is a first explanatory diagram showing the action of the other etching treatment apparatus;

16 is a second explanatory diagram showing the action of the other etching treatment apparatus;

17 is an explanatory diagram showing a result of simulating the flow of etching gas in a processing container;

18 is an explanatory diagram showing a result of simulating a flux of the etching gas;

19 is a second explanatory diagram showing a result of simulating the flux;

20 is a plan view of a substrate showing a point at which an etching rate is measured in an etching process experiment;

21 is a plan view of the substrate, showing the result of the first etching treatment experiment;

22 is an explanatory diagram showing a result of a second etching treatment experiment;

23 is an explanatory diagram showing a result of a third etching treatment experiment;

24 is an explanatory diagram showing a result of a fourth etching treatment experiment;

25 is an explanatory diagram showing a result of a fifth etching treatment experiment;

Explanatory drawing which concerns on consideration of the result of the said 5th process experiment;

27 is a longitudinal sectional view showing a configuration of a conventional etching processing apparatus;

28 is a plan view of a substrate treated with the conventional etching apparatus;

29 is a perspective view showing a structure inside a processing vessel of the conventional etching processing apparatus;

30 is a longitudinal sectional view showing the action of a conventional etching processing apparatus.

<Brief description of the main parts of the drawings>

S: FPD substrate (substrate) 2: etching processing apparatus

3: mounting table 4: upper electrode

5, 5a, 5b: Air flow guide member 6: Gas flow path

7: control unit 20: processing container

21: side wall portion 22: carrying in and out

23: gate valve 24: exhaust passage

32: insulation member 33: shield ring

34 lifting pin 35 lifting mechanism

40 gas shower head 41 upper electrode base

42 gas diffusion space 43 process gas supply passage

44 process gas supply part 45 gas supply hole

51, 51a, 52, 52a: plate 53: baffle plate

54: rectifying member 311: first high frequency power supply

312: second high frequency power supply unit 501: opening

Claims (15)

A mounting table provided inside the processing container for mounting the object to be processed; Processing gas supply means for supplying a processing gas from an upper side of the mounting table to execute a processing on the target object mounted on the mounting table; A gas exhaust unit for exhausting gas in the processing container from the periphery of the mounting table; It is provided in the circumferential direction of the said mounting base above the periphery of the said mounting board, and is provided with the airflow guide member which guides an airflow outwardly between the said mounting parts. Processing unit. The method of claim 1, The airflow guide member is a plate-shaped annular member having an opening corresponding to the external shape of the object to be processed on the mounting table.  Processing unit. The method of claim 1, The airflow guide member is a member that fills a space above the periphery of the mounting table. Processing unit. The method according to any one of claims 1 to 3, The inner end edge of the airflow guide member is located outside the upper position of the outer end edge of the workpiece. Processing unit. The method according to any one of claims 1 to 3, The inner end edge of the airflow guide member is within a range of a position shifted in the horizontal direction by ± 10 mm from an upper position of the outer end edge of the workpiece. Processing unit. The method according to any one of claims 1 to 3, The height of the airflow guide member is varied according to the position in the circumferential direction of the mounting table in order to uniformize the processing speed of the object to be processed by the processing gas with respect to the direction along the outer periphery of the object. Processing unit. The method according to any one of claims 1 to 3, In order to equalize the processing speed of the object to be processed by the processing gas with respect to the direction along the outer periphery of the object, the airflow guide member locally protrudes inward, or the guide member is locally recessed outward. Characterized by Processing unit. The method according to any one of claims 1 to 3, It is provided so as to surround the to-be-processed object on the said mounting table, and is provided with the commutation member whose upper surface is higher than the surface of the to-be-processed object, It is characterized by the above-mentioned. Processing unit. The method of claim 1, The airflow guide member is an inner wall surface of the processing container which is pushed out to the upper periphery of the mount. Processing unit. The method according to any one of claims 1 to 3, And an elevating mechanism for elevating the airflow guide member. Processing unit. The method of claim 10, The airflow guide member is controlled so that the height is different between the processing and the conveyance of the object to be processed, At the time of processing of the workpiece, the inlet and outlet of the workpiece is covered while preventing the gas on the upper side from escaping downward through the gap between the airflow guide member and the inlet and outlet on the sidewall of the processing container. At the time of conveyance, the airflow restricting part is provided in the airflow guide member so as to evacuate from the position toward the carrying in and out ports.  Processing unit. The method of claim 11, In the airflow guide member, at least a portion of the target body toward the carry-out port of the target object is controlled to descend to a position lower than the carry-in port at the time of conveyance of the target object. Processing unit. The method of claim 12, The airflow guide member is composed of one member adjacent to the inlet / outlet of the object to be provided in the side wall portion of the processing container, and another member formed separately from the one member, and the elevating mechanism is one of these members. The other member can be lifted independently Processing unit. The method of claim 11, A storage unit for storing data correlating the processing conditions of the object to be processed with the height position of the airflow guide member; reading data stored in the storage unit according to the selected processing conditions; and based on the read data, the airflow guide member And a control unit for controlling the lifting mechanism to adjust the height position of the  Processing unit. The method according to any one of claims 1 to 3, The processing performed on the target object is an etching process of a film including at least one kind selected from the group of an aluminum film, an aluminum alloy film, a titanium film or a titanium alloy film formed on the surface of the workpiece. Processing unit.

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