KR20200026139A - Plasma processing apparatus - Google Patents

Abstract

An objective of the present invention is to provide a plasma processing apparatus capable of performing desired plasma processing for a work circulated and transferred by a rotational body in accordance with a position in which a passing speed of a surface of the rotational body is different. According to the present invention, the plasma processing apparatus comprises: a transfer unit (30) disposed in a vacuum vessel (20), including the rotational body (31) loading a work (W) thereon to be rotated, and circulating and transferring the work (W) along a circumferential transfer path (T); a partition unit (51) including a sidewall unit (51c) partitioning a part of a gas space (R), to which a reaction gas (G) is introduced, and an opening (51a) facing the transfer path (T); a gas supply unit (53) supplying the reaction gas (G) to the gas space (R); and a plasma source (55) generating plasma for plasma-processing the work (W) in the reaction gas (G). The gas supply unit (53) has an adjusting unit (54) supplying the reaction gas (G) from a plurality of supply portions having a different passing time during which a surface of the rotational body (31) passes through a processing region (F) where plasma processing is performed, and individually adjusting the amount of the reaction gas (G) per unit time of the plurality of supply portions in accordance with the time of passing the processing region (F).

Description

Plasma Processing Equipment {PLASMA PROCESSING APPARATUS}

The present invention relates to a plasma processing apparatus.

In the manufacturing process of various products, such as a semiconductor device, a liquid crystal display, or an optical disk, thin films, such as an optical film, may be formed on the workpiece | work, such as a wafer and a glass substrate, for example. A thin film can be formed by forming into a film | membrane which forms a film | membrane, such as a metal with respect to a workpiece | work, and performing film processing, such as etching, oxidation, or nitriding, with respect to the formed film | membrane.

Film formation or film treatment can be carried out in various ways, but one of them is a method using plasma. In film-forming, an inert gas is introduce | transduced into the chamber in which the target was arrange | positioned, and direct current voltage is applied. The ion of plasma-formed inert gas is made to collide with a target, and the material which came out from the target is deposited on a workpiece | work, and film-forming is performed. In the film treatment, a process gas is introduced into a chamber in which the electrode is disposed, and a high frequency voltage is applied to the electrode. The film treatment is performed by colliding the active species such as ions and radicals of the plasma-processed process gas with the film on the work.

In order to perform such film-forming and film-processing continuously, the rotating table which is a rotating body is mounted inside one chamber, and the plasma which arranged two or more film-forming units and the film-processing unit in the circumferential direction above a rotating table is carried out. There is a processing apparatus (see Patent Document 1, for example). Thus, an optical film etc. are formed by hold | maintaining a workpiece | work on a rotating table and conveying it, and passing it directly under a film-forming unit and a film processing unit.

In the plasma processing apparatus using the rotary table, a cylindrical electrode (hereinafter referred to as a "cylindrical electrode") may be used as the film processing unit, which is closed at the upper end and has an opening at the lower end. When using a cylindrical electrode, an opening part is provided in the upper part of a chamber, and the upper end of a cylindrical electrode is attached to this opening part through an insulator. The side wall of the cylindrical electrode extends into the inside of the chamber, and the opening at the bottom faces the rotary table with a slight gap. The chamber is grounded, the cylindrical electrode serves as the anode, and the chamber and the rotating table serve as the cathode. A process gas is introduced into the cylindrical electrode to apply a high frequency voltage to generate plasma. Electrons contained in the generated plasma flow into the rotating table as a cathode. By passing the workpiece | work held by the rotating table under the opening part of a cylindrical electrode, active species, such as ions and radicals produced | generated by plasma, collide with a workpiece | work, and a film | membrane process is performed.

Patent Document 1: Japanese Patent No. 4428873 Patent Document 2: Japanese Patent Application Laid-Open No. 2011-103257

In recent years, since the workpiece | work which becomes a process target is enlarged and the improvement of processing efficiency is also requested | required, there exists a tendency for the area | region which performs plasma formation and film-forming and film-processing to expand. However, when a plasma is generated by applying a voltage to the cylindrical electrode, it may be difficult to generate a wide range and high density plasma.

Therefore, a plasma processing apparatus has been developed that can generate a high density uniform plasma in a line shape, scan a workpiece in a direction orthogonal to the longitudinal direction of the plasma source, and perform a film treatment on a large workpiece (for example, a patent) See Document 2. Such a plasma processing apparatus performs a film process by generating a plasma by a plasma source in the gas space into which process gas is introduce | transduced.

In the plasma processing apparatus using the rotary table as described above, a case in which a film processing unit using an Electron Cyclotron Resonance (ECR) plasma is used as the film processing unit is considered. In this case, it is also conceivable that the range in which the film treatment in the circumferential direction of the turntable is performed, that is, the width of the treatment area is formed in parallel in the direction along the radial direction of the turntable. By the way, in the inner peripheral side and the outer peripheral side of a rotary table, the speed which passes through the process area | region of the surface of a rotary table arises. That is, the passing speed within the same distance is fast on the outer circumferential side of the turntable and slow on the inner circumferential side. As mentioned above, when the width | variety of a process area | region is formed in parallel in the direction along the radial direction of a turntable, the outer peripheral side passes through the process area for a short time rather than the inner peripheral side of the surface of the turntable. For this reason, the film processing rate after processing for a fixed time has less outer peripheral side and more inner peripheral side.

Then, for example, when an oxide or nitriding treatment is performed on the niobium or silicon film formed in the film formation portion as a film treatment to produce a compound film, the oxidation and nitriding of the niobium or silicon film on the inner and outer circumferential sides of the turntable The degree varies greatly. Therefore, when it is going to perform a process uniformly over the whole workpiece, it becomes difficult to change the grade of the process in the desired position of a workpiece.

This problem also occurs, for example, when a wafer such as a semiconductor is arranged as one column in a circumferential direction on a turntable to perform plasma processing. Moreover, from a viewpoint of process efficiency etc., when making it possible to perform a plasma process in multiple arrangement also in the radial direction, it becomes a more serious problem. Specifically, when the radius of the turntable exceeds 1.0 m and the width of the treatment area in the radius direction of the turntable reaches 0.5 m, the difference in the treatment rate between the inner circumference side and the outer circumference side becomes very large.

An object of the present invention is to provide a plasma processing apparatus capable of performing a desired plasma treatment depending on a position at which a passage speed of the surface of the rotating body is different from the workpiece circulated and conveyed by the rotating body.

In order to achieve the above object, the plasma processing apparatus of the present invention has a vacuum container capable of vacuuming an interior, and a rotating body provided in the vacuum container to hold and rotate a work, and thereby rotating the rotating body. The partition part which has a conveyance part which circulates a workpiece | work through a circumferential conveyance path, the side wall part which partitions a part of gas space into which reaction gas is introduce | transduced, the opening which opposes the said conveyance path inside the said vacuum container, and the said And a gas supply unit for supplying the reaction gas to a gas space, and a plasma source for generating a plasma for plasma processing the workpiece passing through the conveyance path in the gas space into which the reaction gas is introduced. The time for the surface of the rotating body to pass through the processing region for performing the plasma treatment is longer than The said reaction gas is supplied from these some supply parts, and it has a control part which adjusts the supply amount of the said reaction gas per unit time of the said some supply part individually according to the time to pass.

The said adjusting part may adjust the supply amount of the said reaction gas introduce | transduced from each supply part according to the position of the direction which cross | intersects the said conveyance path | route.

The said some supply part may be arrange | positioned in the direction along the said conveyance path | route as an opposing position in the said gas space.

The said adjusting part may adjust the supply amount of the said reaction gas supplied from each supply port according to the film thickness of the film | membrane formed in the said workpiece | work and the time to pass.

The said workpiece has a convex part in the process target surface in which the said plasma process is performed, and the said workpiece hold | maintained by the said rotating body passes between the rotating surface in the said side wall part of the said partition part, and the said rotating body. With a possible gap, the side wall portion may have a recess along the convex portion of the workpiece.

A plurality of trays holding the work are held by the rotating body, and the gap between the opposing surface of the partition and the rotating body in the side wall portion of the partition and the tray allows the work held in the tray to pass. The tray may have a convex portion along the concave portion of the side wall portion. The surface which opposes the said partition part in the said rotating body and the surface which opposes the said partition part in the some said tray may have the part which becomes the same plane continuously along the trajectory of the said circumference.

The said rotating body may hold the said workpiece | work at the installation surface side in which the said vacuum container is provided, and the said opening part of the said partition part may face the said workpiece | work from the said installation surface side.

The plasma source may be an apparatus for generating an electron cyclotron resonance plasma in the gas space.

The plasma source may be an apparatus for generating an inductively coupled plasma in the gas space.

According to this invention, a desired plasma process can be performed with respect to the workpiece | work conveyed and circulated by a rotating body according to the position from which the passage speed | rate of the surface of a rotating body differs.

1 is a perspective perspective view of the plasma processing apparatus of the embodiment;
2 is a perspective bottom view of the plasma processing apparatus of the embodiment;
3 is a cross-sectional view taken along the line AA of FIG. 2.
4 is a cross-sectional view taken along line BB of FIG. 2.
5: is a side view (a), a top view (b), and a perspective view (c) of a workpiece | work.
6 is a side view (a), a plan view (b), and a perspective view (c) of the tray.
7 is a perspective view illustrating a shield member of a film forming portion.
8 is an enlarged cross-sectional view (a) illustrating the distance between the workpiece and the shield member, and an enlarged cross-sectional view (b) illustrating the distance between the workpiece and the partition.
It is a schematic diagram which shows the flow path of a process gas.
10 is a block diagram showing a configuration of a control device of the embodiment.
11 is a perspective view illustrating a modification of the tray.
12 is a perspective view illustrating a modification of the tray.
It is a perspective view which shows the modification of a tray.
It is sectional drawing which shows the modification of a tray and a rotating body.
It is sectional drawing which shows the modification of a tray, (a) is a case where a workpiece has a convex part, and (b) is a case where a workpiece is a flat form.

EMBODIMENT OF THE INVENTION Embodiment of this invention (it is called this embodiment hereafter) is demonstrated concretely with reference to drawings.

[summary]

The plasma processing apparatus 100 shown in FIG. 1 is an apparatus which forms a compound film in the surface of each workpiece | work W using plasma. That is, in the plasma processing apparatus 100, as shown in FIGS. 1-4, when the rotating body 31 rotates, the workpiece | work W on the tray 1 hold | maintained by the rotating body 31 will track the circumference | surroundings. Go to. By this movement, the workpiece | work W repeatedly passes through the position which opposes film-forming part 40A, 40B, or 40C. For each passage, the particles of the targets 41A to 41C are attached to the surface of the workpiece W by sputtering.

In addition, the workpiece | work W passes through the position which opposes the film processing part 50A or 50B repeatedly. For each passage, the particles adhering to the surface of the workpiece W are compounded with the substance in the introduced process gas G2 to form a compound film. 1 is a perspective perspective view of the plasma processing apparatus 100, FIG. 2 is a perspective bottom view, FIG. 3 is a sectional view taken along the line A-A of FIG. 2, and FIG. 4 is a sectional view taken along the line B-B of FIG. In addition, in the following description, the direction based on gravity is made downward, and the direction opposite to gravity is made upward. When the vacuum container 20 of the plasma processing apparatus 100 is provided with the surface which exists in the direction according to gravity with respect to the vacuum container 20, such as a floor surface or the ground of a building, as a mounting surface, a vacuum container ( In the inside of 20), the installation surface side is lower side and the opposite side is upper side.

[work]

As shown in the side view of FIG. 5A, the top view of FIG. 5B, and the perspective view of FIG. (Sp)] is a plate-shaped member having a convex portion Cp and a concave portion Rp on a surface opposite to the convex portion Cp. The convex part Cp is a curved part in which the center of curvature is located on the opposite side to the process object Sp in the process object surface Sp, or the process object surface Sp is comprised from the several plane from which an angle differs. When it refers, it means the part which connects different planes. That is, the convex part Cp includes not only the case where it has a curved part, but also the case where it has a square part. The recessed part Rp means the part on the opposite side to the convex part Cp.

In this embodiment, the workpiece | work W is a rectangular board | substrate, and the convex part Cp is formed in the process target surface Sp by the curved part formed in the side of one end. That is, in this embodiment, the side which extends by curvature is the convex part Cp, and the side which expands and contracts is the recessed part Rp. In addition, the process target surface Sp from the convex part Cp of the workpiece | work W to the other short side becomes a flat surface.

[tray]

The tray 1 is a member which holds the workpiece | work W, as shown to the side view of FIG. 6 (a), the top view of FIG. 6 (b), and the perspective view of FIG. 6 (c). The tray 1 is a substantially fan-shaped plate-shaped object, and one surface thereof is a film forming portion 40 serving as a processing portion and an opposing surface 11 facing the film processing portion 50. In this embodiment, when the tray 1 is mounted on the rotating body 31, as shown in FIG. 3 and FIG. 4, the opposing surface 11 faces downward. 6 shows the opposing surface 11 side up. Here, the side which has the opposing surface 11 of the tray 1 is made into the opposing part X1, and the side of the opposite surface is made into the support part X2.

More specifically, the opposing part X1 has a slope 12 which is a pair of side surfaces along the V-shape. The end part of the side which the pair of slopes 12 approach is connected to the inner peripheral surface 13 along a straight line. The outer peripheral surface 14 along the convex shape is continued to the edge part of the side of the pair of slopes 12 of the tray 1 which combines the orthogonal side.

Moreover, the opposing surface 11 of the opposing part X1 has the film-forming part 40 which is a process part, and the convex part 11a which protruded to the film process part 50 side. This convex part 11a has the shape which follows the recessed part 81 of the shield member 8 mentioned later, and the recessed part 51b of the side wall part 51c in the partition part 51. As shown in FIG. To follow the recessed parts 81 and 51b means having the shape which emulates the recessed parts 81 and 51b. The convex part 11a of the tray 1 opposes the recessed parts 81 and 51b non-contactingly (refer FIG. 3).

As shown to Fig.6 (a), the convex part 11a is also the curved surface which emulates the recessed part Rp of the workpiece | work W. As shown to FIG. The convex part 11a is formed along the arc shape which connects the center of the pair of slopes 12 by planar view, as shown to FIG. 6 (b). The opposing surface 11 of the tray 1 has a flat surface close to the rotating body 31 on the inner circumferential surface 13 side with the convex portion 11a interposed therebetween, and the outer peripheral surface 14 side of the tray 1 from the rotating body 31. The flat surface is far away. The workpiece W is held by bonding the surface on the concave portion Rp side of the workpiece W to imitate the convex portion 11a to such an opposing surface 11 through an adhesive such as a double-sided adhesive tape. do.

The number of workpieces W held by the tray 1 is not limited to a specific number. In this embodiment, three workpieces W are held in one tray 1. In addition, as a means to hold the workpiece | work W, it is not limited to an adhesive material. Even if the tray 1 is provided with a holding mechanism such as a chuck mechanism for detachably holding the work W or a holding mechanism held by a hook member or the like which can be held by inserting the work W, good.

Although the external shape of the support part X2 is substantially the same as the external shape of the opposing part X1, the size is larger than the opposing part X1. For this reason, the tray 1 has the protrusion part 15 which the outer periphery of the support part X2 protrudes outward over the whole periphery rather than the outer periphery of the opposing part X1.

As the material of the tray 1, a material having high thermal conductivity, for example, metal, is preferable. In this embodiment, the material of the tray 1 is made of SUS. In addition, the material of the tray 1 may be, for example, ceramics or resin having good thermal conductivity, or a composite material thereof.

[Plasma processing device]

As shown in FIGS. 1 to 3, the plasma processing apparatus 100 includes a vacuum container 20, a conveying unit 30, film forming units 40A, 40B, 40C, film processing units 50A, 50B, and a loadlock unit. 60, the control device 70 is provided.

[Vacuum container]

The vacuum container 20 is a container, what is called a chamber which can make a vacuum inside. The vacuum chamber 20 is provided with the vacuum chamber 21 inside. The vacuum chamber 21 is a cylindrical sealed space formed surrounded by the bottom surface 20a, the ceiling 20b, and the inner circumferential surface 20c of the interior of the vacuum chamber 20. The vacuum chamber 21 has airtightness, and can be made into a vacuum by pressure reduction. In addition, the bottom surface 20a of the vacuum container 20 is comprised so that opening and closing is possible. In addition, the vacuum container 20 is provided in the installation surface which is not shown in figure in the direction in which an axis becomes substantially perpendicular | vertical through a mount. At this time, the bottom surface 20a side becomes downward, ie, the installation surface side.

The reaction gas G is introduced into the predetermined region inside the vacuum chamber 21. Reaction gas G contains the sputter gas G1 for film-forming, and the process gas G2 for film processing (refer FIG. 3, FIG. 4). In the following description, when not distinguishing sputter gas G1 and process gas G2, it may be called reaction gas G. The sputter gas G1 collides the generated ions with the targets 41A to 41C by the plasma generated by the application of electric power, and deposits the material of the targets 41A to 41C on the surface of the work W. FIG. Gas. For example, an inert gas such as argon gas can be used as the sputter gas G1.

Process gas G2 is a gas for penetrating active species generated by plasma generated by microwaves into a film deposited on the surface of the workpiece W to form a compound film. Hereinafter, as the surface treatment using such a plasma, a treatment without using the targets 41A to 41C may be referred to as a reverse sputtering. Process gas G2 can be changed suitably according to the objective of a process. For example, when oxynitriding a film, a mixed gas of oxygen (O ₂ ) and nitrogen (N ₂ ) is used.

As shown in FIG. 3, the vacuum container 20 has an exhaust port 22 and an introduction port 24. The exhaust port 22 is an opening for ensuring the flow of gas between the vacuum chamber 21 and the outside to perform the exhaust E. This exhaust port 22 is formed in the side surface of the vacuum container 20, for example. The exhaust port 23 is connected to the exhaust port 22. The exhaust part 23 has piping and a pump, a valve, etc. which are not shown in figure. By the exhaust process by this exhaust part 23, the inside of the vacuum chamber 21 is pressure-reduced.

The introduction port 24 is an opening for introducing the sputter gas G1 into each of the film forming portions 40A, 40B, and 40C. This introduction port 24 is provided in the bottom part of the vacuum container 20, for example. The gas supply part 25 is connected to this inlet port 24. The gas supply part 25 has a gas supply source, a pump, a valve, etc. of the sputter gas G1 which are not shown in addition to piping. Sputter gas G1 is introduce | transduced into the shield member 8 mentioned later from this inlet port 24 by this gas supply part 25. As shown in FIG. Moreover, the mounting hole 21a into which the film processing parts 50A and 50B mentioned later are inserted in the bottom surface 20a of the vacuum container 20 is cut off.

[Return]

The outline of the conveyance part 30 is demonstrated. The conveyance part 30 has the rotating body 31 provided in the vacuum container 20. As shown in FIG. The rotating body 31 holds the workpiece | work W. As shown in FIG. The conveyance part 30 is an apparatus which circulates and conveys the workpiece | work W in the circumferential conveyance path T by rotating the rotating body 31. FIG. Holding the workpiece W on the rotating body 31 means that the position of the workpiece W with respect to the rotating body 31 is defined so that the workpiece W is circulated and conveyed with the rotation of the rotating body 31. good. For this reason, even if the workpiece | work W is hold | maintained directly to the rotating body 31, even if it is indirectly held by the rotating body 31 through other members, such as the tray 1, it is hold | maintained by the rotating body 31. It is included in.

In addition, the workpiece | work W may be hold | maintained below the rotating body 31, or may be hold | maintained above. The process target surface Sp of the workpiece | work W should just be hold | maintained in the surface which opposes the film processing part 50 or the film-forming part 40 in the rotating body 31. FIG. The case where the workpiece | work W is arrange | positioned on the rotating body 31 or the tray 1 is also included in what hold | maintained the workpiece | work W. In this embodiment, the workpiece | work W is hold | maintained by the tray 1 hold | maintained by the rotating body 31, and is cyclically conveyed.

Circulating conveyance means moving the workpiece | work W repeatedly in the trajectory of a circumference. The conveyance path T is a trajectory by which the workpiece | work W or the tray 1 mentioned later move by the conveyance part 30. FIG. Although the conveyance path | route T shown in FIG. 2 is linear, it is a circular ring with a donut-shaped width actually. Hereinafter, the detail of the conveyance part 30 is demonstrated.

The rotating body 31 of this embodiment is a circular plate-shaped rotating table. The rotating body 31 may be, for example, thermally sprayed aluminum oxide on the surface of a plate member made of stainless steel. Subsequently, in the case of simply referred to as "around direction", it means "the circumferential direction of the rotating body 31", and when it only refers to "the radial direction", it means "the radial direction of the rotating body 31".

The conveyance part 30 has the motor 32 and the holding part 33 in addition to the rotating body 31. As shown in FIG. The motor 32 is a drive source which applies a driving force to the rotating body 31, and rotates it centering on a circle. The holding | maintenance part 33 is a structure part holding the tray 1 conveyed by the conveyance part 30. As shown in FIG. On the surface of the rotating body 31, the some holding | maintenance part 33 is comprised in the columnar equal arrangement position. The surface of the rotating body 31 in this embodiment is a surface facing down, ie, a lower surface, when the rotating plane of the rotating body 31 extends in a horizontal direction. For example, the area | region which each holding part 33 hold | maintains the tray 1 is formed in the direction parallel to the tangent of the circle | round | yen of the circumferential direction of the rotating body 31, and is provided at equal intervals in a circumferential direction. .

In this embodiment, six holding parts 33 are provided. For this reason, the six trays 1 are hold | maintained on the rotating body 31 by 60 degree intervals. However, the holding part 33 may be one or multiple may be sufficient as it. The rotating body 31 circulates and conveys the tray 1 in which the workpiece | work W was mounted, and passes the position which opposes the film-forming parts 40A, 40B, 40C, and the film processing parts 50A, 50B repeatedly.

More specifically, the holding part 33 is an opening 33a provided in the rotating body 31. The opening 33a is a through hole provided at the circumferentially equally arranged position where each tray 1 of the rotating body 31 is arrange | positioned. Since the opening 33a is substantially the same shape as the external shape of the support part X2 of the tray 1, and is slightly larger than the external shape of the support part X2, the support part X2 can be inserted.

The mounting part 33b is provided in the inner periphery of the opening 33a. The mounting part 33b is a part which protrudes so that the inner periphery of the opening 33a may be substantially the same shape as the external shape of the opposing part X1, and becomes slightly larger than the outer diameter of the opposing part X1. For this reason, the opposing part X1 can be inserted in the mounting part 33b. That is, when fitting the support part X2 of the tray 1 which arrange | positioned the workpiece | work W to the opening 33a, the protrusion part 15 is supported by the mounting part 33b. The opposing surface 11 penetrates through the opening 33a and is exposed to the lower side of the rotating body 31. Thereby, the process target surface Sp of the workpiece | work W held by the opposing surface 11 faces downward.

[The Tabernacle]

Film-forming parts 40A, 40B, and 40C are processing parts provided in the position which opposes the conveyance path | route T to the workpiece | work W which is circulated-conveyed, and deposit | coat a film-forming material on the workpiece | work W by sputtering, and form a film | membrane. Hereinafter, when the some film forming parts 40A, 40B, 40C are not distinguished, it demonstrates as the film forming part 40. FIG. As shown in FIG. 3, the film forming part 40 includes a sputter source 4, a power supply part 6, and a shield member 8.

(Sputter one)

The sputter source 4 is a supply source of the film-forming material which deposits and forms a film-forming material on the workpiece | work W by sputtering. The sputter source 4 has the target 41A, 41B, 41C, the backing plate 42, and the electrode 43, as shown to FIG. 2 and FIG. The targets 41A, 41B, and 41C are formed of a film forming material that is deposited on the work W to form a film, and are disposed at positions facing away from the transport path T.

In this embodiment, as shown in FIG. 2, three target 41A, 41B, 41C is provided in the position arrange | positioned on the vertex of a triangle by planar view. It is arrange | positioned in order of target 41A, 41B, 41C toward the outer periphery from the side near the rotation center of the rotating body 31. As shown in FIG. Hereinafter, when not distinguishing target 41A, 41B, 41C, it demonstrates as target 41. FIG. The surface of the target 41 opposes the workpiece | work W spaced apart by the conveyance part 30 at a space.

In addition, the three targets 41A, 41B, and 41C allow the region to which the film forming material can be attached is larger than the size of the tray 1 in the radial direction. Thus, the annular area | region along the conveyance path T is made into the film-forming area | region F (it shows with the dotted line of FIG. 2) corresponding to the area | region formed by the film-forming part 40. As shown in FIG. The width | variety of the radial direction of the film-forming area | region F is longer than the width | variety of the tray 1 in a radial direction. In addition, in this embodiment, the three targets 41A-41C are arrange | positioned so that the film-forming material may be stuck without a gap in the radial whole width area | region of the film-forming area | region F. In addition, in FIG.

As the film forming material, for example, niobium, silicon or the like is used. However, as long as it is a material formed by sputtering, various materials can be applied. In addition, the target 41 has a cylindrical shape, for example. However, other shapes, such as a cylindrical columnar shape and a prismatic cylinder shape, may be sufficient.

The backing plate 42 is a member which individually holds each target 41A, 41B, 41C. The electrode 43 is a conductive member for separately applying electric power to the targets 41A, 41B, and 41C from the outside of the vacuum vessel 20. The power applied to each of the targets 41A, 41B, and 41C can be changed individually. In addition, the sputter source 4 is equipped with a magnet, a cooling mechanism, etc. suitably as needed.

(Shield member)

The shield member 8 is a member facing the workpiece | work W arrange | positioned at the tray 1 at intervals, as shown to the perspective view of FIG. 3 and FIG. The shield member 8 of this embodiment has the opening 80 in the side through which the workpiece | work W passes, and forms the film-forming chamber S in which film-forming by the film-forming part 40 is performed. That is, the shield member 8 introduces sputter gas G1, forms a space for generating plasma, and suppresses leakage of the sputter gas G1 and the film forming material into the vacuum container 20.

The shield member 8 has a bottom surface portion 82 and a side surface 83. The bottom surface part 82 is a member which forms the bottom surface of the film-forming room S. FIG. As shown in FIG. 3 and FIG. 7, the bottom surface portion 82 is a substantially fan-shaped plate-like body disposed in parallel with the plane of the rotating body 31. In the bottom surface portion 82, the targets 41A, 41B, 41C are positioned at positions corresponding to the targets 41A, 41B, 41C so that the targets 41A, 41B, 41C are exposed in the film formation chamber S. FIG. The target hole 82a which is the same in size and shape is formed. The bottom surface part 82 is attached to the bottom surface 20a of the vacuum container 20 so that the target 41A, 41B, 41C may be exposed from the target hole 82a.

The side part 83 is a member which forms the periphery of the film-forming chamber S. FIG. The side part 83 has an outer peripheral wall 83a, an inner peripheral wall 83b, and partitions 83c and 83d. The outer circumferential wall 83a and the inner circumferential wall 83b are arcuate-shaped rectangular parallelepiped shapes, and are plate-shaped bodies standing upright in the direction orthogonal to the rotation plane of the rotating body 31. The lower edge of the outer circumferential wall 83a is attached to the outer circumferential edge of the bottom surface portion 82. The lower edge of the inner circumferential wall 83b is attached to the inner circumferential edge of the bottom surface portion 82. The partitions 83c and 83d have a flat rectangular parallelepiped shape and are plate-like bodies which are erected in a direction orthogonal to the plane of the rotating body 31. Lower edges of the partitions 83c and 83d are respectively attached to a pair of radial edge portions of the bottom surface portion 82.

The junction part of the bottom surface part 82 and the side part 83 as mentioned above is airtightly sealed. The bottom surface portion 82 and the side surface portion 83 may be formed integrally, that is, continuously with a common material. With this shield member 8, the lower and side surfaces of the peripheral edge are covered by the bottom surface portion 82 and the side surface portion 83, and the film formation chamber S having an opening 80 at the upper side facing the work W. FIG. This is made up. In the film forming chamber S, the tip of the gas supply part 25 extends to the vicinity of the target 41A, 41B, 41C.

The shield member 8 becomes a substantially fan shape which radially expands toward the outer side from the center side in the radial direction of the rotating body 31 in planar view. The roughly fan-type here means the form of the fan side part of a fan. The opening 80 of the shield member 8 is also substantially fan-shaped. The speed at which the workpiece W held below the rotor 31 passes over the opening 80 becomes slower as it goes toward the center side in the radial direction of the rotor 31 and becomes faster as it goes outward. . Therefore, when the opening 80 is rectangular or square in plan view, a difference occurs in the time when the workpiece W passes over the opening 80 on the center side and the outside in the radial direction.

In the present embodiment, the diameter of the opening 80 is extended from the center side in the radial direction toward the outside, whereby the time for the workpiece W to pass through the opening 80 can be made constant, and the plasma processing described later is performed. You can evenly. However, as long as the time difference does not cause a problem on the product, it may be rectangular or square in plan view. As a material of the shield member 8, aluminum and SUS can be used, for example.

A gap D1 is formed between the upper ends of the partitions 83c and 83d and the rotor 31 so as to pass through the workpiece W below the rotating rotor 31 as shown in FIG. It is. In other words, the heights of the partitions 83c and 83d are set such that a slight gap is formed between the edge of the shield member 8 and the work W. FIG.

More specifically, the opening 80 of the shield member 8 has a concave portion 81 along the convex portion Cp of the work W held by the tray 1. Following the convex part Cp means the shape which mimics the convex part Cp. In the present embodiment, the concave portion 81 is a curved surface along the curvature of the convex portion Cp. However, the space | interval D1 is empty between the recessed part 81 and the convex part Cp as mentioned above. That is, the shape which follows the process target surface Sp of the workpiece | work W non-contact is formed in the upper edge of the partition 83c, 83d containing the recessed part 81. FIG. It is preferable that the space | interval D1 of the process target surface Sp of the workpiece | work W and the shield member 8 also include the space | interval of the convex part Cp and the recessed part 81, and shall be 1 mm-15 mm. Do. This is for allowing passage of the workpiece | work W and maintaining the pressure of the film-forming chamber S inside.

As shown in FIG. 2, the shield member 8 forms the film forming positions M2, M4 and M5 in which the workpiece W is formed by the sputter source 4, and the film processing positions M1, which perform the film treatment. M3) is partitioned. The shield member 8 can suppress the diffusion of the sputtering gas G1 and the film forming material of the film forming positions M2, M4, and M5 into the vacuum chamber 21.

The horizontal range of the film-forming positions M2, M4, and M5 becomes an area partitioned by the shield members 8. Moreover, the workpiece | work W circulated and conveyed by the rotating body 31 passes through the position which opposes the target 41 of film-forming positions M2, M4, M5, and it forms into a film on the surface of the workpiece | work W. The material is deposited as a film.

The deposition chamber S divided by the shield members 8 in the deposition positions M2, M4, and M5 is an area where most of the deposition is performed. However, even in the area | region which deviates from the film-forming chamber S, there exists a leakage of the film-forming material from the film-forming chamber S. FIG. As a result, the film is not free from deposition. That is, the film-forming area | region F in which film-forming is performed in the film-forming part 40 becomes a slightly wider area | region than the film-forming chamber S divided by the shield member 8.

Such a film forming section 40 can simultaneously form a film using the same film forming materials for the plurality of film forming sections 40A, 40B, and 40C, thereby increasing the amount of film forming within a predetermined time, that is, the film forming rate. In addition, the film | membrane which consists of layers of several film-forming materials can also be formed by simultaneously or sequentially forming into a some film-forming part 40A, 40B, 40C using mutually different film-forming materials.

(Power supply)

The power supply unit 6 is a component that applies power to the target 41. By applying electric power to the target 41 by the power supply unit 6, the sputtered gas G1 that has been converted into plasma is generated. And the ion generated by the plasma collides with the target 41, and the film-forming material which came out from the target 41 can be deposited on the workpiece | work W. FIG. For this reason, the power supply part 6 can grasp | ascertain as a plasma source which produces the plasma for plasma-processing the workpiece | work W. As shown in FIG. The power applied to each of the targets 41A, 41B, and 41C can be changed individually.

In the present embodiment, the power supply unit 6 is a DC power supply to which a high voltage is applied. Moreover, in the case of the apparatus which performs a high frequency sputter | spatter, it can also be set as RF power supply. In addition, the power supply unit 6 may be provided for each of the film forming portions 40A, 40B, and 40C, and only one of the plurality of film forming portions 40A, 40B, and 40C may be provided. When only one power source unit 6 is provided, application of electric power is switched over and used. The rotary body 31 is grounded with the vacuum vessel 20 and the coin phase, and generates a potential difference by applying a high voltage to the target 41 side.

In this embodiment, as shown in FIG. 2, three film-forming parts 40A, 40B, and 40C are arrange | positioned between film processing parts 50A and 50B in the conveyance direction of the conveyance path | route T. In FIG. The film forming positions M2, M4, and M5 correspond to the three film forming sections 40A, 40B, and 40C. The film processing positions M1 and M3 correspond to the two film processing units 50A and 50B.

[Membrane processing part]

The film processing units 50A and 50B are processing units that perform film processing on the material deposited on the workpiece W conveyed by the transport unit 30. This film processing is a reverse sputter that does not use the target 41. Hereinafter, when not distinguishing film process part 50A, 50B, it demonstrates as a film process part 50. As shown in FIG. The film processing unit 50 has a processing unit 5.

The processing unit 5 has the partition part 51, as shown to FIG. 3 and FIG. 8 (b). The partition 51 has side walls 51c for partitioning a part of the gas space R into which the process gas G2 is introduced, and an opening facing the transport path T inside the vacuum container 20 ( 51a). The gas space R is a space formed between the inside of the partition part 51 which is the space enclosed by the side wall part 51c, and the rotating body 31, and the workpiece | work W circulated and conveyed by the rotating body 31 is shown. ) Pass repeatedly. That is, the gas space R is not only a space inside the partition 51, but also an end surface of the opening 51a, that is, an opposing surface facing the rotating body 31 of the partition 51, and the rotating body. It also includes the space between 31. "Dividing a part of gas space R" means forming the boundary of a part of gas space R. As shown in FIG. For this reason, the partition part 51 does not cover so that all of the gas space R may be formed, and does not cover the gas space R between the opposing surface of the partition part 51 and the rotating body 31.

The partition part 51 of this embodiment is a rectangular cylindrical body with a rounded corner in the horizontal cross section surrounded by the side wall part 51c. The rectangular shape with rounded corners here is a track shape in a track and field race. The track shape is a shape in which a pair of partial circles are spaced apart from each other in a direction opposite to the convex side and are connected to each other by a straight line parallel to each other. The partition part 51 is made of the same material as the rotating body 31.

In the partition part 51, the long diameter is arrange | positioned so that it may become parallel to the radial direction of the rotating body 31. As shown in FIG. Moreover, it does not need to be exact parallel and may have some inclination. As for the space inside the partition 51, the outer diameter of the partition 51 and the edge of a similar shape are until the cross section orthogonal to an axis reaches the inner bottom surface from the opposing surface which is the end surface of the opening 51a. It is a round rectangle. This space constitutes a part of the gas space R. FIG. For this reason, the process area | region which is a plasma process, ie, the area | region which is film-processed, becomes a rectangular shape with the rounded corner of a similar shape with the opening 51a of the partition part 51. FIG. In that case, the length of the rotation direction of a process area becomes substantially the same in the radial direction.

The opening 51a of the upper edge of the partition part 51 faces away from the rotating body 31 side, and opposes a conveyance path | route. That is, as shown in FIG.8 (b), the workpiece | work W hold | maintained by the rotating body 31 between the opposing surface with the rotating body 31 in the partition part 51, and the rotating body 31 is shown. The space | interval D2 which can pass is formed. That is, the height of the side wall part 51c of the partition part 51 is set so that some clearance may arise between the edge of the partition part 51 and the workpiece | work W. As shown in FIG.

More specifically, the side wall part 51c of the partition part 51 has the convex part Cp of the workpiece | work W hold | maintained by the tray 1 similarly to the recessed part 81 of the shield member 8. It has the recessed part 51b which follows. To follow the convex part Cp means the shape which mimics the convex part Cp. In this embodiment, the recessed part 51b is the curved surface which follows the curvature of the convex part Cp. However, the space | interval D2 is empty between the recessed part 51b and the convex part Cp as mentioned above. That is, the shape which follows the process target surface Sp of the workpiece | work W non-contact is formed in the upper edge of the partition part 51 containing the recessed part 51b. It is preferable that the space | interval D2 of the process target surface Sp of the workpiece | work W and the partition part 51 also includes the space | interval of the convex part Cp and the recessed part 51b, and shall be 1 mm-15 mm. Do. This is for allowing passage of the workpiece | work W and maintaining pressure inside the partition part 51. Inside the partition 51, plasma is generated by the introduction of microwaves.

As shown in FIG. 3, most of the side wall part 51c of the partition part 51 is accommodated in the vacuum chamber 21. As shown in FIG. However, the bottom surface of the partition part 51 protrudes below and is inserted in the mounting hole 21a provided in the bottom surface 20a of the vacuum container 20. As shown in FIG. Between the partition part 51 and the vacuum container 20 is sealed by the O ring 21b. Moreover, the window part 52 is provided in the bottom face of the partition part 51. The window part 52 partitions between the gas space R in the partition part 51 and the exterior, and is a structure part which can introduce a microwave.

The window part 52 of this embodiment has the window hole 52a and the window member 52b. The window hole 52a is a through hole formed in the bottom surface of the partition part 51. The window hole 52a can change the distribution shape of the generated plasma by the shape. In other words, the distribution shape of the plasma can be determined by the shape of the window hole 52a. In this embodiment, when the window hole 52a has a rectangular shape with rounded corners, the plasma having a shape substantially similar to the horizontal cross section of the gas space R can be generated. In addition, when the material which forms the window hole 52a, ie, the material of the partition part 51, is a dielectric material, such as quartz, the distribution shape of a plasma can be determined by the shape of the waveguide 55a mentioned later. The window member 52b is a flat plate which enters the inside of the partition part 51 and closes the window hole 52a. The window member 52b is arrange | positioned on the O-ring 52c inserted around the window hole 52a of the inner bottom of the partition part 51, and hermetically seals the window hole 52a. The window member 52b may be a dielectric such as alumina or a semiconductor such as silicon.

In addition, the processing unit 5 includes a gas supply unit 53, an adjusting unit 54 (see FIG. 10), a plasma source 55, and a cooling unit 56. The gas supply part 53 supplies the process gas G2 to the gas space R, as shown to FIG. 3, FIG. 4, and FIG. The gas supply part 53 is an apparatus which supplies the process gas G2 from the some supply part from which the time of the surface of the rotating body 31 passing through a process area | region differs. The plurality of supply portions are provided at equal intervals along the pair of opposed inner walls as the inner side walls of the partition 51 in the long side direction, that is, in the radial direction of the rotating body 31. For this reason, the some supply part is provided also in the direction along the conveyance path T as a position which opposes in the gas space R. As shown in FIG. The direction along the conveyance path T is a direction substantially parallel to the conveyance path T, or the tangential direction of the conveyance path T.

The gas supply part 53 has the supply source of process gas G2, such as a cylinder not shown, and the some pipe 53a connected to the supply source. Process gas G2 is oxygen and nitrogen, for example. Each pipe 53a branches and is connected to the oxygen supply source and the nitrogen supply source. The edge part of the some pipe 53a is arrange | positioned in the long side direction in the partition part 51, and comprises the some supply port 531A-531D and supply port 531a-531d which are the said supply parts.

Here, when comparing the rotation center side (inner circumferential side) and the outer circumferential side in the rotating body 31 of the workpiece | work W hold | maintained by the rotating body 31, the circumference which the point of the surface of the rotating body 31 traces The lengths, ie the circumferential lengths, are different. For this reason, a difference arises in the speed which the point of the surface of the rotating body 31 passes through a fixed distance. And in this embodiment, the partition part 51 is arrange | positioned so that the long diameter of the opening 51a may become parallel to the radial direction of the rotating body 31. As shown in FIG. Moreover, the linear portions of the openings 51a in which the plurality of supply ports 531A to 531D and the supply ports 531a to 531d are formed are parallel to each other in the radial direction. In addition, below, when supply port 531A-531D and supply port 531a-531d are not distinguished, it demonstrates as supply port 531. FIG.

In such a configuration, the outer circumferential side is shorter than the inner circumferential side in the rotating body 31 in the time that the workpiece W passes the constant distance above the partition 51. For this reason, the rate of film processing differs in an inner peripheral side and an outer peripheral side. The some supply port 531 is provided in the some part from which the time which the surface of the rotating body 31 passes through the process area | region which performs a plasma process differs. The direction in which the plurality of supply ports 531 are arranged in parallel intersects with the conveyance path T. As shown in FIG. In addition, the supply port 531 is arrange | positioned in the position which opposes the gas space R between them. The arrangement direction of the supply port 531 which opposes in the gas space R has followed the conveyance path T. As shown in FIG.

More specifically, each pipe 53a branches in the position which opposes one inner wall and the other inner wall of the partition part 51, and each end part supplies the supply port 531A- of process gas G2. 531D) and supply ports 531a to 531d. The supply ports 531A to 531D are arranged along the inner wall of one side in the longitudinal direction of the partition 51 at equal intervals. The supply ports 531a to 531d are arranged along the other inner wall in the longitudinal direction of the partition 51 at equal intervals.

The supply ports 531A to 531D are arranged in the order of the supply port 531A, the supply port 531B, the supply port 531C, and the supply port 531D from the inner circumferential side toward the outer circumferential side. Similarly, the supply ports 531a to 531d are arranged in the order of the supply port 531a, the supply port 531b, the supply port 531c, and the supply port 531d from the inner circumferential side toward the outer circumferential side. The supply ports 531A to 531D are disposed downstream of the conveyance path T, and the supply ports 531a to d are arranged upstream of the conveyance path T. Then, the supply port 531A, supply port 531a, supply port 531B and supply port 531b, supply port 531C and supply port 531c, supply port 531D, and supply port 531d are provided. They face on the downstream side and the upstream side, respectively.

In addition, in this embodiment, the innermost part supply part and the outermost part supply part are located outside the film-forming area | region F. In addition, in FIG. That is, the supply ports 531A and 531a are disposed inside the inner circumference of the film forming region F, and the supply ports 531D and 531d are disposed outside the outer circumference of the film forming region F. FIG.

As shown in FIG. 9, the adjusting unit 54 adjusts the supply amount of the process gas G2 introduced by the gas supply unit 53 in accordance with the position in the direction intersecting the conveying path T. As shown in FIG. The direction crossing with the conveyance path T is a direction which is not parallel to the conveyance path T, and is not limited to the direction orthogonal to the conveyance path T. That is, the adjustment part 54 individually adjusts the supply amount of the process gas G2 per unit time of the several parts of the gas supply part 53 according to the time which the surface of the rotating body 31 passes through a process area | region. . The adjustment part 54 has the mass flow controller (MFC) 54a provided in the pair of path | route of the piping 53a, respectively. The MFC 54a is a member having a mass flow meter for measuring the flow rate of the fluid and a solenoid valve for controlling the flow rate.

As shown in FIG. 3, FIG. 4, the plasma source 55 uses the plasma for processing the workpiece | work W which passes through the conveyance path T to the gas space R into which the process gas G2 was introduce | transduced. It is a component part to generate. The plasma source 55 has a waveguide 55a and a coil 55b. The waveguide 55a is a tube, one end of which is connected to a microwave transmitter not shown, and the other end of which is disposed in the vicinity of the window portion 52 as the outside of the gas space R. As shown in FIG. Waveguide 55a guides the microwaves from the microwave transmitter to window portion 52. The microwave is introduced into the gas space R through the window member 52b of the window portion 52.

The coil 55b is a member that generates a magnetic field in the gas space R by application of a voltage from a power supply (not shown). In the gas space R into which the process gas G2 is introduced, a magnetic field is generated by the coil 55b, and microwaves are introduced. When the frequency of the electrons circularly moving around the magnetic field coincides with the frequency of the microwaves, the electrons rotate at high speed by resonance, and the electrons collide with the gas molecules to generate a high density plasma. As a result, active species such as electrons, ions, and radicals are generated in the gas space (R).

The cooling unit 56 is a component that cools the partition 51. The cooling part 56 has the piping 56a and the cavity 56b. Although not shown, the pipe 56a is connected to a chiller, which is a cooling water circulation device that circulates and supplies the cooling water C, and is a circulation path through which the cooling water C circulates. The cavity 56b is formed in the side wall part 51c of the partition part 51, and is the space which the cooling water C flows, and the supply side and the discharge side of the piping 56a communicate. The cooling water C cooled by the chiller is supplied from the supply side, and the partition 51 is cooled and the heating is suppressed by repeating the circulation in the cavity and discharged from the drainage side.

[Rodlock Part]

The load lock part 60 carries in the vacuum chamber 21 the tray 1 which mounted the unprocessed workpiece | work W from the exterior by the conveyance means which is not shown in the state which maintained the vacuum of the vacuum chamber 21. And the tray 1 on which the processed work W is mounted is carried out to the outside of the vacuum chamber 21. Since the load lock part 60 can apply the thing of well-known structure, description is abbreviate | omitted.

[controller]

The control apparatus 70 is an apparatus which controls each part of the plasma processing apparatus 100. This control device 70 can be configured by, for example, a dedicated electronic circuit or a computer operating with a predetermined program. That is, in the control of the introduction and exhaust of the sputter gas G1 and the process gas G2 into the vacuum chamber 21, the control of the power supply unit 6, the control of the rotation of the rotor 31, and the plasma source 55. The control contents are programmed with respect to the introduction of microwaves, control of generation of magnetic fields, control of cooling water C in the cooling unit 56, and the like. The control device 70 executes this program by a processing device such as a PLC or a CPU, and can cope with various specifications of plasma processing.

The object to be specifically controlled is as follows. That is, the rotational speed of the motor 32, the initial exhaust pressure of the plasma processing apparatus 100, the selection of the sputter source 4, the applied power to the target 41 and the coil 55b, the output of the microwave transmitter, the sputter gas The flow rate, type, introduction time and exhaust time of the G1 and the process gas G2, the time of film formation and film treatment, the flow rate and temperature of the cooling water C, and the like.

In particular, in this embodiment, the control apparatus 70 controls the film-forming rate by controlling the supply amount of the sputter gas G1 from the gas supply part 25 and the application of electric power to the target 41 of the film-forming part 40. To control. The control device 70 also controls the film processing rate by controlling the output of the microwave and the supply amount of the process gas G2 from the gas supply part 53.

As described above, the configuration of the control device 70 for executing the operations of each unit will be described with reference to FIG. 10, which is a virtual functional block diagram. In other words, the control device 70 includes a mechanism control unit 71, a power supply control unit 72, a gas control unit 73, a storage unit 74, a setting unit 75, and an input / output control unit 76.

The mechanism control unit 71 includes an exhaust unit 23, a gas supply unit 25, a gas supply unit 53, an adjusting unit 54, a motor 32, a chiller of the cooling unit 56, a load lock unit 60, and the like. Is a processing unit for controlling a drive source, a solenoid valve, a switch, a power supply, and the like. The power supply control unit 72 is a processing unit that controls the power supply unit 6, the microwave transmitter of the plasma source 55, the power supply of the coil 55b, and the like.

For example, the power supply control unit 72 individually controls the power applied to the targets 41A, 41B, and 41C. In the case where the film formation rate is to be uniform throughout the work W, sequential power is determined in consideration of the speed difference between the inner circumferential side and the outer circumferential side, as in the target 41A <target 41B <target 41C. Raise it. In other words, the power may be determined in proportion to the speed of the inner circumferential side and the outer circumferential side.

However, the proportional control is an example. The higher the speed, the higher the power, and the processing rate may be set to be uniform. In addition, for the part to increase the thickness of the film formed on the workpiece W, the power applied to the target 41 is made high, and for the part to make the film thickness thin, the applied power to the target 41 is made low. good.

The gas control unit 73 is a processing unit that controls the introduction amount of the process gas G2 by the adjusting unit 54. For example, the supply amount per unit time of the process gas G2 from each supply port 531 is controlled individually. In order to make the film treatment rate uniform throughout the work W, the supply amount from each supply port 531 is increased in order from the inner circumference side to the outer circumference side in consideration of the speed difference between the inner circumference side and the outer circumference side. do. Specifically, the supply amount is the supply port 531A <supply port 531B <supply port 531C <supply port 531D, supply port 531a <supply port 531b <supply port 531c <supply port (531d). That is, the supply amount may be determined in proportion to the speed of the inner circumferential side and the outer circumferential side.

In addition, according to the film thickness formed in the workpiece | work W, the supply amount of the process gas G2 supplied from each supply port 531 is adjusted. In other words, for the portion where the film thickness is increased, the supply amount of the process gas G2 is increased so that the amount of the film treatment increases. And for the part which makes film thickness thin, the supply amount of process gas G2 is made small so that the quantity of film processing may become small.

In addition, for example, in the case of the film processing with respect to the film | membrane formed so that the film thickness might become thicker on the inner peripheral side, the supply amount of process gas G2 may also be set more so that the inner peripheral side. Thereby, it is also combined with the relationship with the speed mentioned above, and as a result, the supply amount from each supply port 531 may become uniform. That is, the adjusting part 54 supplies the supply amount of the process gas G2 supplied from each supply port 531 according to the film thickness formed in the workpiece | work W and the time when the rotating body 31 passes through a process area | region. You may adjust the. In addition, the gas control unit 73 also controls the introduction amount of the sputter gas G1.

The storage unit 74 is a configuration unit that stores information necessary for the control of the present embodiment. The information stored in the storage unit 74 includes the exhaust amount of the exhaust unit 23, the power applied to each target 41, the supply amount of the sputter gas G1, the power applied to the coil 55b, and the microwave transmitter. It includes the output and the supply amount of the process gas G2 for each supply port 531. The setting unit 75 is a processing unit for setting information input from the outside into the storage unit 74.

The power applied to the targets 41A, 41B, and 41C and the supply amount of the process gas G2 from the supply ports 531A to 531D and 531a to 531d may be linked. That is, when the rotation speed (rpm) of the rotating body 31 is made constant and the electric power applied to the target 41A, 41B, 41C is set by the setting part, each supply port 531A-531D, 531a will be proportional to this. The supply amount from ˜531d) may be set. Moreover, when the rotation speed (rpm) of the rotating body 31 is made constant, and the supply amount from each supply port 531A-531D, 531a-531d is set by the setting part, it is proportional to each target 41A, 41B. , 41C) may be set.

Such a setting can be performed as follows, for example. First, by experiment or the like, the relationship between the film thickness and the applied power or the supply amount of the process gas G2 and the relation between the applied power and the supply amount of the process gas G2 accordingly is determined. At least one of these is tabled and stored in the storage unit 74. Then, the setting unit 75 determines the applied power or the supply amount with reference to the table according to the input film thickness, the applied power or the supply amount.

(Operation processing)

In the case where a uniform film thickness and a uniform film quality film are to be formed in a large area, the following conditions should be considered when adjusting the supply amount of the process gas G2.

[1] film thickness formed by film forming part during one revolution of rotor

[2] film thickness distribution of deposited films in radial direction of rotating body

[3] speed differences between inner and outer rotors

[4] width of plasma generating area (width of processing area)

Here, the condition of [2] can be removed from the condition if electric power is individually applied to each of the targets 41A, 41B, and 41C of the film forming section 40 to achieve a uniform film thickness. In addition, as shown in the above aspect, when the gas space R is formed into a rectangular shape having rounded corners in the planar direction, the width of the processing region becomes the same from the innermost to the outermost circumference of the film forming region F. FIG. For this reason, since the plasma density can be the same in the range of the width | variety, the condition of [4] can also be excluded from a condition.

Therefore, the supply amount of each supply port 531 can be determined from the conditions of [1] and [3]. That is, as conditions of [1], by prior experiment etc., either the innermost thickness or the outermost film thickness of the film-forming area | region F, and the optimum supply amount suitable for the film thickness are calculated | required. And since the speed difference of the inner periphery and the outer periphery of [3] is related (proportional) to the radius of an inner periphery and an outer periphery, the radial position (distance from a rotation center) of the some supply port 531, and the said film thickness And the supply amount of each of the plurality of supply ports 531 from the optimum supply amount. The film thickness of the film to be formed during one rotation of the rotating body 31 in the innermost circumference of the film forming region F and the rotation of the rotating body 31 in the outermost circumference of the film forming region F are rotated once. The film thickness of the film to be formed, the optimum supply amount suitable for the film thickness, and the radial position of each supply port 531 are included in the information stored in the storage unit 74.

For example, the optimum supply amount of the innermost feeder 531 for a predetermined film thickness of the film formed in the film forming part 40 is a, the innermost radius is Lin, the outermost radius is Lou, and the outermost feeder ( The optimum supply amount of 531) is A. First, the case where the optimum supply amount a of the innermost circumference supply port 531 is known is demonstrated. The supply amount calculating unit calculates the optimum supply amount a of the innermost circumference, the radius Lin of the circle passing through the innermost supply port 531, and the radius of the circle passing through the outermost supply port 531, It acquires from the memory | storage part 74, and calculates the optimal supply amount A of outermost circumference based on the following formula | equation.

A = a × Lou / Lin

Similarly, the optimum supply amount of the other supply ports 531 can also be obtained according to the ratio of the radii. That is, if the optimum supply amount of the supply port 531 is Ax and the radius of the circle passing through the supply port 531 is Px, the optimum supply amount Ax can be obtained based on the following equation.

Ax = a × Px / Lin

On the contrary, when the optimum supply amount A of the outermost circumferential supply port 531 is known, the optimum supply amount Ax of each supply port 531 is the radius of the circle passing through the supply port 531 ( From Px), it can obtain | require based on the following formula.

Ax = A × Px / Lou

As described above, when the film thickness of the film formed by the film forming portion 40 during the rotation of the rotating body [1] is known, the supply amount from the plurality of supply ports 531 is automatically determined. For this reason, as an assumed pattern of the supply amount from each supply port 531, compared with the case where a large number of data is hold | maintained, the data amount held by the memory | storage part 74 can be made small. For example, in the case of a film whose refractive index changes by composition, such as SiON, since the supply amount of each supply port 531 is automatically determined from the innermost or outermost film thickness of the film formation region F, N ₂ and O By adjusting the mixing ratio of ₂ , a film having a desired refractive index can be obtained.

The input / output control unit 76 is an interface that controls conversion of signals and input / output between respective units to be controlled. In addition, the input device 77 and the output device 78 are connected to the control device 70. The input apparatus 77 is an input means, such as a switch, a touch panel, a keyboard, a mouse, for an operator to operate the plasma processing apparatus 100 via the control apparatus 70. For example, selection of the film forming section 40 and the film processing section 50 to be used, desired film thickness, applied power of each target 41A to 41C, process gas from each supply port 531A to 531D, and 531a to 531d ( The supply amount of G2) and the like can be input by the input means.

The output device 78 is output means, such as a display, a lamp, a meter, etc. which make information for confirming the state of an apparatus into the state which an operator can visually recognize. For example, the output device 78 can display an input screen of information from the input device 77. In this case, the targets 41A, 41B and 41C and the supply ports 531A to 531D and 531a to 531d may be displayed in a schematic diagram so that respective positions can be selected to input numerical values. In addition, the targets 41A, 41B, 41C and the respective supply ports 531A to 531D and 531a to 531d may be displayed schematically, and the values set for each may be displayed numerically.

[action]

The operation of the present embodiment as described above will be described below with reference to FIGS. 1 to 10. In addition, although not shown, the plasma processing apparatus 100 is carried in, conveyed, and carried out the tray 1 holding the workpiece W by conveying means such as a conveyor, a robot arm, and the like.

The some tray 1 is carried in in the vacuum container 20 one by one by the conveyance means of the load lock part 60. FIG. The rotating body 31 moves the empty holding part 33 to the carry-in part from the load lock part 60 one by one. The holding | maintenance part 33 hold | maintains the tray 1 carried in by the conveying means separately, respectively. Thus, as shown in FIG.2 and FIG.3, the tray 1 which hold | maintained the workpiece | work W used as film-forming object is hold | maintained on the rotating body 31 all.

As mentioned above, the process which forms the film | membrane about the workpiece | work W introduce | transduced into the plasma processing apparatus 100 is performed as follows. In addition, the following operation | movement is an example which performs film-forming and film-processing by operating each one of the film-forming part 40 and the film processing part 50, as only the film-forming part 40A and the film processing part 50A only. . However, a plurality of sets of the film forming section 40 and the film processing section 50 may be operated to increase the processing rate. In addition, the example of the film-forming and film | membrane processing by the film-forming part 40 and the film processing part 50 is a process which forms the film of silicon oxynitride. Forming the silicon oxynitride film is performed by repeating the process of permeating oxygen ions and nitrogen ions while circulating and conveying the work W each time silicon is attached to the work W at the atomic level.

First, the vacuum chamber 21 is always exhausted by the exhaust part 23, and pressure reduction is carried out. And when the vacuum chamber 21 reaches the predetermined pressure, as shown in FIG.2 and FIG.3, the rotating body 31 will rotate. Thereby, the workpiece | work W held by the holding | maintenance part 33 moves along the conveyance path T, and passes through the film-forming parts 40A, 40B, 40C, and the film processing parts 50A, 50B. When the rotating body 31 reaches the predetermined rotational speed, the gas supply part 25 of the film-forming part 40 supplies the sputter gas G1 to the circumference | surroundings of the target 41 next. At this time, the gas supply part 53 of the film processing part 50 also supplies the process gas G2 to the gas space R. As shown in FIG.

In the film forming section 40, the power supply section 6 applies electric power to the targets 41A, 41B, and 41C. As a result, the sputter gas G1 is converted into plasma. In the sputter source 4, active species such as ions generated by plasma collide with the target 41 to blow off particles of the film forming material. For this reason, the particle | grains of film-forming material accumulate on each surface of the workpiece | work W which passes through the film-forming part 40, and a film | membrane is produced | generated. In this example, a layer of silicon is formed.

The power applied to each of the targets 41A, 41B, and 41C by the power supply unit 6 is set in the storage unit 74 so as to increase in order as it goes from the inner circumferential side to the outer circumferential side of the rotating body 31. The power supply control unit 72 outputs an instruction to control the power applied by the power supply unit 6 to each target 41 in accordance with the power set in the storage unit 74. For this control, the amount of film formation per unit time by sputtering increases from the inner circumference side to the outer circumference side, but the passage speed of the rotating body 31 increases from the inner circumference side to the outer circumference side. As a result, the whole film thickness of the workpiece | work W becomes uniform.

In addition, even when the workpiece | work W passes through the film-forming part 40 and the film | membrane processing part 50 which are not movable, since film-forming and film-processing are not performed, it is not heated. In this unheated area, the work W emits heat. In addition, the film-forming part 40 which does not operate is film-forming positions M4 and M5, for example. In addition, the film | membrane process part 50 which does not operate is a film | membrane process position M3, for example.

On the other hand, the workpiece | work W formed into a film passes the position which opposes the opening 51a of the partition part 51 in the processing unit 5. In the processing unit 5, as shown in FIG. 8, oxygen and nitrogen which are process gas G2 are supplied from the gas supply part 53 to the gas space R through the supply port 531, and the coil 55b is supplied. The magnetic field is formed by energizing), and the microwaves from the waveguide 55a are introduced through the window portion 52, thereby generating plasma in the gas space R. Oxygen ions and nitrogen ions generated by the generated plasma collide with the surface of the formed work W to penetrate into the membrane material.

The flow rate per unit time of the process gas G2 introduced from the supply port 531 is set in the storage unit 74 so that the inner circumferential side of the rotating body 31 is smaller and the outer circumferential side is larger. The gas control part 73 outputs an instruction | command so that the adjustment part 54 may control the flow volume of the process gas G2 which distribute | circulates each piping 53a according to the flow volume set in this memory | storage part 74. FIG. For this reason, the amount of active species such as ions per unit volume generated in the gas space R increases in the outer circumferential side than in the inner circumferential side. Therefore, the amount of membrane treatment that depends on the amount of active species increases from the inner circumference side to the outer circumference side.

However, the treatment region to be treated is a rectangle with rounded corners similar to the openings 51a of the partition 51. For this reason, the width of the processing region, that is, the width in the rotational direction, is the same over the radial direction. In other words, the processing region has a constant width in the radial direction. On the other hand, the work W has a high speed of passing through the processing region from the inner circumference side to the outer circumference side. For this reason, the time which the workpiece | work W passes through a process area | region becomes shorter from the inner peripheral side to the outer peripheral side. By increasing the supply amount of the process gas G2 on the outer circumferential side, the film throughput increases on the outer circumferential side, thereby making it possible to compensate for the shortening of the passage time of the processing region. As a result, the film throughput of the whole work W becomes uniform.

In addition, when performing a film | membrane process using two or more types of process gas G2 like oxynitriding process, the film | membrane formed in the film-forming part 40 is completely made into a compound film during the rotation of the rotating body 31 by one rotation. At the same time, the composition of the film needs to be uniform throughout the film formation surface. This embodiment is suitable for plasma processing which performs a film | membrane process using two or more types of process gas G2. For example, a film in which the ratio of x and y of silicon oxynitride (SiO _x N _y ) is 1: 1 is said to be desired. In that case, it is necessary to control both the quantity of the active species by which the film formed into a film becomes a compound film sufficiently, and the ratio of the oxygen and nitrogen contained in the active species. In this embodiment, since the supply part of process gas G2 is made into multiple, and the supply amount of the process gas G2 in each supply part can be adjusted for every kind of process gas G2, both quantity and ratio are both. Easy to control

During the process of forming the film as described above, the rotating body 31 continuously rotates and continuously conveys the tray 1 holding the work W. FIG. Thus, the compound film is formed by circulating the work W to repeat the film formation and the film treatment. In this embodiment, a silicon oxynitride film is formed on the surface of the workpiece W as the compound film.

If the predetermined processing time for which the film of silicon oxynitride reaches the desired film thickness has elapsed, the film forming section 40 and the film processing section 50 are stopped. That is, the application of the electric power to the target 41 by the power supply unit 6, the supply of the process gas G2 from the supply port 531, the energization to the coil 55b, and the introduction of the microwave from the waveguide 55a are stopped. do.

Thus, after the process of forming a film | membrane is completed, the tray 1 which mounted the workpiece | work W is positioned in the load lock part 60 one by one by the rotation of the rotating body 31, and is conveyed to a conveyance means. It is carried out to the outside by this.

In addition, the flow rate of the process gas G2 of the outermost circumferential supply ports 531D and 531d outside the film formation region F may be lower than the supply ports 531B, 531C, 531b, and 531c without making the maximum. . That is, supply port 531A <supply port 531D <supply port 531B <supply port 531C, supply port 531a <supply port 531d <supply port 531b <supply port 531c The flow rate is set as much as possible.

Since the workpiece | work W does not pass to the position deviating from the film-forming area | region F, it is not necessary to supply process gas G2. However, as shown in FIG. 9, when the partition part 51 is formed with the margin outside the film formation area F, unless the process gas G2 is supplied to the outside of the film formation area F at all, In the vicinity of the inner circumferential end or the outer circumferential end of the film forming region F, diffusion of the process gas G2 out of the film forming region F occurs. As a result, the treatment rate is lowered in the vicinity of the inner circumferential end or in the vicinity of the outer circumferential end of the film formation region F. FIG. For this reason, the process gas G2 may be supplied preliminarily outside the film forming area F. FIG. Since the process gas G2 at this time needs only to be able to compensate for the decrease by diffusion, it is sufficient to be an amount which can prevent diffusion in relation to the size of the above-mentioned area | region used as a margin. However, it may be necessary to increase the supply amount more than the supply ports 531C and 531c.

In this manner, the supply ports 531A, 531a, 531D, and 531d located outside the film formation region F may be separated from the adjustment target of the process gas G2 by the adjusting unit 54 according to the passage time.

In addition, the supply ports 531D and 531d outside the film formation region F have a low degree of involvement in the film processing and do not have to maximize the flow rate of the process gas G2. By supplying, the grade of a film | membrane process can be made more uniform. The same applies to the supply ports 531A and 531a on the inner circumferential side. That is, also by providing the supply port 531 outside the film formation area F, the effect of making the grade of a film process uniform, etc. can be acquired.

[Effect]

(1) This embodiment has the vacuum container 20 which can make a inside vacuum, and the rotating body 31 provided in the vacuum container 20, and mount and rotate the workpiece | work W, The rotating body ( The side wall part 51c which divides the conveyance part 30 which circulates and conveys the workpiece | work W in the circumferential conveyance path T by rotating 31, and a part of gas space R into which process gas G2 is introduce | transduced. ), A partition 51 having an opening 51a opposed to the conveyance path T inside the vacuum vessel 20, and a gas supply part 53 for supplying the process gas G2 to the gas space R. ) And a plasma source 55 for generating a plasma for plasma processing the workpiece W passing through the conveyance path T in the gas space R into which the process gas G2 is introduced. 53 is a part of the plurality of supply portions having different time periods for the surface of the rotating body 31 to pass through the processing region for performing plasma processing. Switch supplying a gas (G2) and has a control unit 54 for controlling a supply amount per unit time according to the individual process gas (G2) of the plurality of supply parts, a time passing through the treatment zone.

For this reason, the grade of the plasma process with respect to the workpiece | work W circulated | conveyed and conveyed by the rotating body 31 can be adjusted with the position where the passing speed of the surface of the rotating body 31 differs. Therefore, the desired plasma process can be performed, such as making the degree of the process with respect to the workpiece | work W uniform, or changing the degree of the process of a desired position. This is effective as the diameter of the rotating body 31 is larger and the width of the film forming region F is larger, that is, the difference in the circumferential speed at the inner circumferential side and the outer circumferential side of the film forming region F is larger.

(2) The adjusting part 54 adjusts the supply amount of the process gas G2 introduced from each supply part according to the position of the direction which cross | intersects the conveyance path | route T. As shown in FIG. For this reason, the supply amount of the process gas G2 of several supply part can be individually adjusted according to the position from which the passage speed | rate of the surface of the rotating body 31 differs.

(3) The some supply part is arrange | positioned in the direction along the conveyance path T as a position which opposes in the gas space R. As shown in FIG. For this reason, the process gas G2 can spread widely in gas space R in a short time.

(4) The adjusting unit 54 supplies the process gas to be supplied from the respective supply portions according to the film thickness of the film formed on the workpiece W and the time when the surface of the rotating body 31 passes through the processing region performing the plasma processing. Adjust the supply of (G2). For this reason, the film | membrane process suitable for a film thickness can be performed.

(5) This embodiment has the some tray 1 hold | maintained by the rotating body 31, and hold | maintains the workpiece | work W, the surface which opposes the partition part 51 of the tray 1, and a partition Between the opposing surface with the rotating body 31 in the side wall part 51c of the part 51, the workpiece | work W hold | maintained by the tray 1 has a clearance which can pass, and the side wall part 51c has a workpiece | work It has the recessed part 51b along the convex part Cp provided in the surface facing the partition part 51 of (W).

For this reason, when the workpiece | work W passes between the opposing surface of the partition part 51 and the rotating body 31, the space | interval of the opposing surface and the rotating body 31 can be narrowed and the process gas G2 of The pressure drop caused by leakage can be prevented. In addition, by arranging a plurality of workpieces W and narrowing the distance from each other, after one workpiece W passes, the next workpiece W immediately comes to the gap between the partition 51 and the rotating body 31. Since N is continuously narrowed, it is difficult for the process gas G2 to leak further. In addition, it is possible to prevent the contamination caused by the inflow of the sputter gas G1 into the gas space R, thereby preventing the decrease in the film treatment rate. In addition, it is possible to prevent the contamination caused by the inflow of the process gas G2 flowing out from the gas space R into the film forming portion 40, and to lower the film forming rate due to the reaction of the target 41, to generate an arc, and to generate particles. It can prevent occurrence.

(6) The rotating body 31 holds the workpiece | work W on the installation surface side in which the vacuum container 20 is installed, and the opening 51a of the partition part 51 opposes the workpiece | work W from the installation surface side. do. For this reason, since the process target surface Sp of the workpiece | work W faces the installation surface side, particle | grains, dust, the film-forming material adhered in the apparatus, etc. fall by gravity, and are prevented from adhering to the workpiece | work W. In addition, the installation surface here is a surface which exists in the direction according to gravity with respect to the vacuum container 20, such as a floor surface and the ground.

(7) The supply port 531 is provided in the film forming area F, which is an annular area along the conveyance path T, corresponding to the area where the film forming part 40 forms a film. In addition, the supply port 531 provided outside the film-forming area F is deviated from the adjustment object of the supply amount of the process gas G2 by the adjustment part 54. FIG.

Thus, even if it is outside the film forming area F, supply of process gas G2 can prevent the flow volume shortage of the process gas G2 in the edge part of the film forming area F to be prevented. For example, even if the outermost supply port 531 and the innermost supply port 531 are outside the film formation area F, the process gas G2 can be supplied to achieve uniform film processing. However, since only the outermost film forming area F does not have a maximum flow rate, there is no shortage of the flow rate in the film forming area F, so that the flow rate can be saved. That is, the supply portion of the process gas G2 outside the film formation region F functions as an auxiliary supply portion and an auxiliary supply port for supplementing the flow rate of the process gas G2 in the film formation region F.

[Modification]

Embodiments of the present invention also include the following modifications.

(1) The supply port 531 of the process gas G2 may be provided in the partition 51. For example, the front end of each pipe 53a in the gas supply part 53 may be extended to the supply port 531 formed in the partition part 51. The tip of the pipe 53a may be nozzle type with a small diameter. Also in this case, the pipe 53a is disposed not only in the film formation region F but also outside the film formation region F, and functions as an auxiliary supply port for supplementing the flow rate of the process gas G2 in the film formation region F and an auxiliary nozzle. You may have to.

(2) The number of parts where the gas supply part 53 supplies the process gas G2 and the number of the supply ports 531 may be a plurality of parts having different passage speeds on the surface of the rotating body. It is not limited. By providing three or more in a line in the film-forming area | region F, more precise flow volume control can be performed according to a process position. In addition, as the number of supply portions and supply ports 531 is increased, the distribution of the gas flow rate is closer to the linear form, and local variations in processing can be prevented. The supply ports 531 may be provided in any one row without providing the two rows of the partitions 51 opposed to each other. In addition, the supply port 531 may be arranged at a position shifted in the height direction even if the supply port 531 is not arranged on a straight line.

(3) The structure of the adjustment part 54 is not limited to the said example. A manual valve may be provided in each pipe 53a to be adjusted manually. Since the supply amount of the process gas G2 may be adjusted, the pressure may be kept constant, the valve may be adjusted by opening and closing the valve, or the pressure may be elevated. The adjusting part 54 may be realized by the supply port 531. For example, according to the position where the passage speed of the surface of a rotating body differs, you may provide the supply port 531 of a different diameter, and may adjust the supply amount of process gas G2. The supply port 531 may be replaced with nozzles of different diameters. The diameter of the supply port 531 may be changed by a shutter or the like.

(4) Since the speed is a distance moving per unit time, even if the supply amount of the process gas G2 from each supply port is set from the relationship with the time required to pass through the processing region in the radial direction. good.

(5) The shape of the partition part 51 and the window part 52 is also not limited to what was illustrated by the said embodiment. The horizontal cross section may be square, circular or elliptical. However, since the passage time of the work W on the inner circumference side and the outer circumference side is different in the shape having the same interval between the inner circumference side and the outer circumference side, the supply amount of the process gas G2 is adjusted according to the difference in processing time. easy.

(6) Even if the plurality of trays 1 are held on the rotating body 31, the opposing surfaces 11 of the plurality of trays 1 may be formed to have portions that are continuously coplanar along the trajectory of the circumference. good. Here, the opposing surfaces 11 of the plurality of trays 1 being coplanar refers to a case where corresponding portions of the opposing surfaces 11 of the trays 1 are substantially the same height. For example, as shown in FIG. 11, when the opposing part X1 of the tray 1 is inserted in the opening 31a of the holding part 33, the opposing surface 11 and the rotating body in the tray 1 ( The tray 1 and the rotating body 31 are formed so that the surface facing the partition 51 in 31 may be coplanar continuously along the trajectory of the circumference. In this case, some groove may be formed in the boundary between the opening 31a and the opposing surface 11.

Thereby, compared with the space | interval of the surface of the workpiece | work W and the partition part 51 or the shield member 8, the space | interval of the surface of the tray 1 and the partition part 51 or the shield member 8 is extremely extreme. Expansion is prevented, and leakage of the reaction gas G can be further suppressed. Moreover, when including the process part which uses different reaction gas G, mutual control by the leakage of reaction gas G can be prevented further.

Moreover, you may form so that the process target surface Sp of the workpiece | work W and the opposing surface 11 of the tray 1 may have the part which becomes the same plane continuously along the trajectory of the circumference. For example, as shown in FIG. 12, the fitting portion 11b into which the work W is fitted may be provided in the tray 1. The fitting portion 11b is a recess in which part or all of the thickness direction of the workpiece W is embedded. The depth of the fitting portion 11b is set so that the surface of the tray 1 and the processing target surface Sp of the work W are coplanar.

Thereby, the height difference of the process target surface Sp of the workpiece | work W and the surface of the tray 1 is reduced, and the surface of the tray 1 other than the workpiece | work W, the shield member 8, and the partition part ( The gap of 51) can be prevented from expanding, and leakage of the reaction gas G can be further suppressed.

Moreover, you may hold | maintain the workpiece | work W directly by the holding | maintenance part provided in the rotating body 31 or the rotating body 31, without using the tray 1. As shown in FIG. Also in this case, for example, as shown in FIG. 13, the workpiece | work W is inserted in the recessed part 31d formed in the lower surface 31c of the rotating body 31, and the workpiece | work W and the rotating body 31 are shown. ) May be formed along the trajectory of the circumference so as to have a portion that is continuously coplanar.

(7) The shape of the tray 1 and the shape of the rotating body 31 are not limited to the said shape. For example, the shape of the tray 1 may be made into the shape which follows the unevenness | corrugation of the workpiece | work W. As shown in FIG. That is, in the said example, although the tray 1 had the convex part 11a along the simple recessed part Rp, when the workpiece | work W has an unevenness, the opposing surface 11 of the tray 1 is The shape of the workpiece W may be adjusted so that the workpiece W can be stably held.

(8) It is not necessary to provide the unevenness | corrugation which follows the shape of the workpiece | work W in the tray 1 and the rotating body 31. FIG. That is, as long as it is the structure which can hold | maintain the workpiece | work W stably, you may make the holding surface of the workpiece | work W of the tray 1 and the rotating body 31 flat. For example, as shown in FIG. 14, the opposing surface 11 of the tray 1 may be made flat, and the workpiece | work W may be hold | maintained on this opposing surface 11.

(9) By providing the holding part for supporting the edge of the work W in the tray 1, the work W may be held. For example, as shown to (a) and (b) of FIG. 15, the some opening 16 which penetrated to the up-down direction is formed in the tray 1. As shown to FIG. Fig. 15A is a work W having a convex portion Cp, and Fig. 15B is an example in the case of a flat work W. As shown in Figs. Here, the opening part 16 is larger in the support part X2 side than the opposing part X1 side. More specifically, the support part X2 side of the opening 16 is the insertion part 16a of the magnitude | size which can put the workpiece | work W inside the tray 1. As shown in FIG.

Moreover, the opposing part X1 side of the opening 16 becomes the holding | maintenance part 16b which can hold | maintain the tray 1 by raising inward. Although the inner circumference of the holding part 16b is a shape substantially the same as the outer shape of the workpiece | work W, since it is smaller than the workpiece | work W, the process target surface Sp of the workpiece | work W inserted from the insertion part 16a is carried out. Maintain the outer periphery. In addition, in this example, since the holding part 16b supports the magnetic weight of the tray 1, it is not necessary to provide a complicated mechanism for holding the workpiece | work W. As shown in FIG. In addition, such a holding part 16b may be formed in the opening provided in the rotating body 31, and it may be set as the structure which hold | maintains the workpiece | work W by the rotating body 31. FIG.

(10) The number of the trays 1, the workpieces W, and the numbers of the holding portions 33, 16b holding the same, which are simultaneously conveyed by the conveying portion, may be at least one, and is limited to the number illustrated in the above embodiment. It doesn't work. That is, the aspect by which one workpiece | work W is circularly conveyed may be sufficient, and the aspect by which two or more workpiece | work W is circularly conveyed may be sufficient. The aspect which circulates and conveys two or more rows of workpiece | work W in the radial direction may be sufficient.

(11) In the above embodiment, the rotating body 31 is a rotary table, but the rotating body 31 is not limited to the table shape. The rotating body 31 which rotates by holding a tray or a workpiece | work to the arm extended radially from the rotation center may be sufficient. The installation surface of the vacuum container 20 is not limited to a floor surface or the ground, but may be on an upper side such as a ceiling. In addition, the film-forming part 40 and the film processing part 50 may be in the ceiling side of the vacuum container 20, and the vertical relationship of the film-forming part 40 and the film processing part 50 and the rotating body 31 may be reversed. . In this case, the surface of the rotating body 31 in which the holding | maintenance part 33 is arrange | positioned becomes a surface which faces upward, ie, an upper surface, when the rotating plane of the rotating body 31 extends in a horizontal direction. The opening 80 of the shield member 8 and the opening 51a of the partition 51 face downward.

In the said embodiment, the holding part 33 is provided in the lower surface of the rotating body 31 arrange | positioned horizontally, this rotating body 31 is rotated in a horizontal plane, and the film-forming part below this rotating body 31 is formed. Although 40 and the film | membrane processing part 50 were demonstrated as arrange | positioned, it is not limited to this. For example, the arrangement of the rotating body 31 is not limited to the horizontal but may be arranged vertically, or may be arranged inclined with respect to the vertical or horizontal. In addition, the holding part 33 may also be provided in both surfaces of the rotating body 31. That is, in this invention, the direction of the rotation plane of the rotating body 31 may be any direction, and the position of the holding part 33, the film-forming part 40, and the position of the film processing part 50 are the holding part 33 The film-forming part 40 and the film processing part 50 should just be in the position which opposes the workpiece | work W hold | maintained at.

(12) The plasma source 55 is not limited to the above apparatus. Not only the device by ECR plasma but also the device which generate | occur | produces a plasma in gas space R by another principle may be sufficient. For example, an apparatus for generating an inductively coupled plasma (ICP) in the gas space R may be used. Such an apparatus has an antenna in the vicinity of the window portion 52 as the outside of the gas space R. As shown in FIG. When power is applied to the antenna, the process gas G2 in the gas space R is ionized to generate plasma. By this plasma, the workpiece | work W which passes through the conveyance path T is processed.

(13) The kind, shape, and material of the workpiece | work W which perform a plasma processing are not limited to a specific thing. For example, the workpiece | work W which has a recessed part may be used for the process target surface Sp which opposes the film-forming part 40 and the film processing part 50. FIG. In addition, you may use the workpiece | work W which has an uneven part in the process object surface Sp. In this case, the side opposite to the workpiece | work W of the shield member 8 and the partition part 51 may be made into the shape which follows the recessed part or uneven part of the workpiece | work W. As shown in FIG.

In addition, as above-mentioned, the process target surface Sp may use the workpiece | work W of the flat surface. Moreover, you may use the thing containing the electrically conductive materials, such as a metal and carbon, the thing containing insulators, such as glass and rubber, and the thing containing semiconductors, such as silicon. In addition, the number of the workpiece | work W which performs a plasma process is not limited to a specific number, either. The holder 33 may be a groove, a protrusion, a jig, a holder, or the like that holds the tray 1, and may be configured by a mechanical chuck, an adhesive chuck, or the like.

(14) As the film forming material, various materials that can be formed by sputtering can be applied. For example, tantalum, titanium, aluminum, or the like can be applied. Also about the material for making a compound, various materials other than nitrogen and oxygen are applicable.

(15) The number of targets 41 in the film forming portion 40 is not limited to three. The number of the targets 41 may be one, two, or four or more. By increasing the number of targets 41 and adjusting the applied power, more precise control of the film thickness becomes possible.

(16) The number of the film forming section 40 and the film processing section 50 is not limited to a specific number. The film forming section 40 and the film processing section 50 may be one, two or four or more. By increasing the number of film forming portions, the film forming rate can be improved. As a result, the number of the film processing units 50 can be increased, and the film processing rate can be improved. In the case where there are a plurality of membrane processing units 50, the gas flow rate may be adjusted as described above by the respective adjusting units 54. In addition, you may arrange | position the some film processing part 50 in the radial direction.

(17) The shield member 8 in the film-forming part 40 partitions a part of gas space into which sputter gas G1 is introduce | transduced, and opposes the conveyance path T inside the vacuum container 20. As shown in FIG. It can also grasp | ascertain as a partition part which has an opening. The gas space in this case is a space formed between the inside of the shield member 8 and the rotating body 31, and the workpiece | work W circulated and conveyed by the rotating body 31 passes repeatedly. That is, the gas space includes not only the space inside the shield member 8, but also the space between the rotating body 31 facing the opening 80. Also for the gas supply part 25 of the film-forming part 40, the sputter gas G1 is supplied from the some supply part from which the surface of the rotating body 31 passes through the process area | region which performs a plasma process, and differs, It is good also as a structure which has the control part which adjusts the supply amount of the sputter gas G1 per unit time of a some supply part individually according to the time to pass.

(18) The present invention may or may not have the film forming section 40. That is, it is not limited to the plasma processing apparatus 100 which forms a film. Moreover, it is not limited to the plasma processing apparatus 100 which performs a film processing, It can apply widely to the plasma processing apparatus 100 which processes a process target using the active species generate | occur | produced by plasma. For example, in addition to the above aspect, or both or one of the film forming section and the film processing section are omitted, the plasma processing apparatus 100 includes a processing unit that generates plasma in the gas space and performs surface modification such as etching, ashing, cleaning, or the like. ) May be configured. In this case, for example, the processing unit may be a linear ion source. Further, for example, it is conceivable to use an inert gas such as argon as the process gas G2.

(19) The shape of the vacuum vessel 20 is not limited to the cylindrical shape. Polygonal cylinder shapes, such as a rectangular parallelepiped shape, may be sufficient.

(20) As mentioned above, although embodiment of this invention and the modification of each part were demonstrated, this embodiment and the modification of each part are shown as an example, and limiting the scope of an invention is not intended. These novel embodiments described above can be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the gist of the invention. These embodiments and its modifications are included in the scope and spirit of the invention and included in the invention described in the claims.

1 tray
4 Sputter One
5 processing units
6 power supply
8 shield member
11 facing
11a convex
11b fitting
12 slope
13 inner circumference
14 outer circumference
15 protrusion
16 opening
16a insert
16b holding part
20 vacuum containers
20a bottom
20b ceiling
20c inner circumference
21 vacuum chamber
21a mounting holes
21b О ring
22 vent
23 exhaust
24 inlet
25 gas supply
30 Carrier
31 rotating bodies
31a opening
31c
31d recess
31e placement
32 motor
33 Maintenance
33a opening
33b mount
40, 40A ~ 40C film deposition part
41, 41A to 41C targets
42 backing plate
43 electrodes
50, 50A, 50B membrane treatment
51 compartments
51a opening
51b recess
51c side wall
52 Window
52a window hole
52b window member
52c o ring
53 Gas Supply
53a piping
54 Adjuster
55 Plasma Source
55a waveguide
55b coil
56 Cooling section
56a piping
56b cavity
60 Road Lock
70 control unit
71 Instrument Control
72 power control unit
73 gas control
74 Memory
75 settings
76 I / O control unit
77 input device
78 output device
80 opening
81 recess
82 Bottom section
82a target hole
83 side parts
83a outer wall
83b inner wall
83c, 83d bulkhead
100 plasma processing unit
531, 531A to 531D, 531a to 531d supply ports
C coolant
Cp convex
D1, D2 spacing
E exhaust
F film formation area
G reactive gas
G1 Sputter Gas
G2 process gas
M1, M3 membrane treatment position
M2, M4, M5 deposition positions
R gas space
Rp recess
S tabernacle
Sp treatment target surface
T return path
W walk
X1 counterpart
X2 support

Claims (10)

In the plasma processing apparatus,
The vacuum container which can make the inside a vacuum,
A conveying unit provided in the vacuum container and having a rotating body for holding and rotating the work, and rotating the rotating body to circulate and convey the work in a circumferential conveyance path;
A partition portion having a side wall portion for partitioning a part of the gas space into which the reactive gas is introduced, an opening opposed to the conveying path inside the vacuum container;
A gas supply unit supplying the reaction gas to the gas space;
A plasma source for generating a plasma for plasma processing the workpiece passing through the conveyance path in the gas space into which the reactive gas is introduced,
The gas supply unit supplies the reaction gas from a plurality of supply portions having different times at which the surface of the rotating body passes through the processing region for performing the plasma processing,
And a control unit that individually adjusts a supply amount of the reaction gas per unit time of the plurality of supply portions in accordance with the passing time. The method of claim 1,
The said control part controls the supply amount of the said reaction gas introduce | transduced from each supply part according to the position of the direction which cross | intersects the said conveyance path | route. The method of claim 1,
The said plurality of supply part is a position which opposes in the said gas space, and is arrange | positioned in the direction along the said conveyance path, The plasma processing apparatus characterized by the above-mentioned. The method of claim 1,
And the adjusting unit adjusts a supply amount of the reaction gas supplied from each supply port according to the film thickness of the film formed on the work and the time to pass. The method of claim 1,
The said workpiece has a convex part in the process target surface in which the said plasma process is performed,
It has a clearance which the said workpiece hold | maintained by the said rotating body can pass between the opposing surface and the said rotating body in the said side wall part of the said partition part,
The said side wall part has a recessed part along the said convex part of the said workpiece, The plasma processing apparatus characterized by the above-mentioned. The method of claim 5,
A plurality of trays holding the work is held by the rotating body,
Between the opposing surface with the said rotating body in the said side wall part of the said partition part, and the said tray, the said workpiece hold | maintained by the said tray has a clearance which can pass through,
The tray has a convex portion along the concave portion of the side wall portion. The method of claim 6,
The surface which opposes the said partition part in the said rotating body, and the surface which opposes the said partition part in the some said tray have the part which becomes the same plane continuously along the trajectory of the said circumference, The plasma characterized by the above-mentioned. Processing unit. The method of claim 1,
The rotating body holds the workpiece on an installation surface side on which the vacuum container is installed,
The said opening of the said partition part opposes the said workpiece | work from the said installation surface side, The plasma processing apparatus characterized by the above-mentioned. The method according to any one of claims 1 to 8,
The plasma source is a plasma processing apparatus, characterized in that for generating an electron cyclotron resonance plasma in the gas space. The method according to any one of claims 1 to 8,
The plasma source is a plasma processing apparatus, characterized in that for generating an inductively coupled plasma in the gas space.

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