JP2022047890A - Power supply apparatus - Google Patents

Abstract

To provide a power supply apparatus 31 capable of enhancing the power density of a substrate S to be treated to increase power efficiency when sequentially treating a plurality of substrates S in surface treatment performed to the substrates S having applied voltage, and a surface treatment machine 1 using the same.SOLUTION: A power supply apparatus 31 used for a surface treatment machine 1 for sequentially subjecting a plurality of substrates S to surface treatment and attached to a rotor 22 for supplying electric power to the substrates S supplies electric power supplied from a power supply 32 to the substrates S held on the rotor 22 and selectively switches power supply and non-power supply by the rotation angle of the rotor 22.SELECTED DRAWING: Figure 1

Description

The present invention relates to a power feeding device that is preferable for a surface treatment machine that performs surface treatment of a substrate in a vacuum atmosphere, and a surface treatment machine that uses the power feeding device.

A film forming apparatus including a vacuum chamber, a substrate position selection mechanism, and a power source, wherein the vacuum chamber includes a film forming region having a sputter film forming source and a reaction region having a reaction gas source, and the substrate position selection. Depending on the mechanism, it is possible to select whether the position of the substrate is the film forming region or the reaction region, and the power supply is applied to the film forming region by using a film forming apparatus that supplies high frequency bias power to the substrate. When a metal thin film is deposited and the metal thin film is converted into a compound film in the reaction region, a technique of continuously applying a high-frequency bias voltage to the substrate is known throughout both the deposition step and the conversion step. (Patent Document 1). By doing so, the substrate becomes a negative potential due to self-bias, and ions containing the reaction species in the reaction gas are attracted to the substrate and surely adhere to the metal thin film. In addition, the energy held by the cations can be used for conversion of the metal thin film into a compound film, and the compound formation reaction is promoted. Further, by drawing in ions, the reactivity is increased and the film forming speed can be improved.

Patent No. 4613015

In the above-mentioned conventional technique, power supply to the board and non-power supply can be switched by a switch provided between the rotating drum and the power supply, but when processing a plurality of boards sequentially, a plurality of pieces held by the rotating drum. A voltage will be applied to the substrate at the same time. Therefore, when a thin film is sequentially formed on a plurality of substrates by sputtering, electric power is supplied not only to the substrate on which the thin film formation process is performed but also to the substrate waiting for the process or after the process. In this case, if the power to be supplied is constant, the power supplied per unit area of the substrate, that is, the power density is lowered, and the power efficiency is lowered. As a result, there is a problem that the effect of the surface treatment obtained by supplying electric power is weakened.

The problem to be solved by the present invention is to increase the power density of the substrate to be processed and to increase the power when a plurality of substrates are sequentially processed in the surface treatment performed on the substrate to which a voltage is applied, such as bias sputtering. It is an object of the present invention to provide a power feeding device capable of increasing efficiency and a surface treatment machine using the power feeding device.

The present invention is a power feeding device used for a surface treatment machine that sequentially performs surface treatment on a plurality of substrates, and is directly or indirectly attached to a rotating body that supplies power to the substrates, and the power supplied from the power source is used for the rotation. The above problem is solved by a power supply device for a surface treatment machine that supplies power to a substrate held on the body and selectively switches between power supply and non-power supply according to the rotation position of the rotating body.

In the above invention, it is preferable that the power feeding device for the surface treatment machine supplies electric power from the power source to the rotating body by non-contact power feeding.

In the above invention, the power feeding device for a surface treatment machine includes an insulator and a plurality of conductors, and the plurality of conductors are discretely arranged between the insulators along the rotation direction of the rotating body, and are predetermined. It is preferable to sequentially connect to the power supply at the rotation position of.

In the above invention, the power feeding device is circular when viewed in a plan view, the plurality of conductors are connected to the power source at the outer peripheral portion, and both ends of the outer peripheral portion and the rotation center of the rotating body form a rotation direction of the rotating body. It is preferable that the angle of is equal to the time for surface-treating the substrate and the time for supplying power to the substrate.

In the above invention, it is preferable that the plurality of conductors are sequentially connected to the plurality of power sources.

Further, in the present invention, the power feeding device, a housing for holding at least a part of the rotating body in a vacuum atmosphere, and a plurality of holders provided on the rotating body for holding the substrate and supplying electric power. The above problem is solved by a surface treatment machine provided with a plurality of conductors connecting the plurality of holders and the plurality of conductors.

In the above invention, it is preferable that the number of conductors is equal to the number of the holders and the conductors are connected to the holders on a one-to-one basis.

According to the present invention, in the surface treatment performed on a substrate to which a voltage is applied, when a plurality of substrates are sequentially treated, electric power can be selectively supplied to the substrate to be treated. As a result, the power density of the substrate to be processed can be increased and the power efficiency can be improved.

It is a front view which shows 1st Embodiment of the surface treatment machine which includes the power feeding device which concerns on this invention. It is a top view of the surface treatment machine shown in FIG. It is a top view of the power feeding device shown in FIG. FIG. 3 is a cross-sectional view taken along the line AA of the rotating body shown in FIG. FIG. 1 is a plan view (No. 1) showing a process of surface treatment of a substrate using the surface treatment machine of FIG. 1. FIG. 2 is a plan view (No. 2) showing a process of surface treatment of a substrate using the surface treatment machine of FIG. 1. FIG. 3 is a plan view (No. 3) showing a process of surface treatment of a substrate using the surface treatment machine of FIG. 1. FIG. 4 is a plan view (No. 4) showing a process of surface treatment of a substrate using the surface treatment machine of FIG. 1. FIG. 5 is a plan view (No. 5) showing a process of surface treatment of a substrate using the surface treatment machine of FIG. 1. It is a front view which shows the 2nd Embodiment of the surface treatment machine which includes the power feeding device which concerns on this invention. It is a top view of the surface treatment machine shown in FIG. It is a top view of the power feeding device shown in FIG.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. It should be noted that the embodiments described below are merely examples, and the present invention is not limited thereto, and modifications can be made to an appropriate extent.

[First Embodiment]
FIG. 1 is a front view showing a first embodiment of a surface treatment machine including a power feeding device according to the present invention. The surface treatment machine 1 of the present embodiment is a device for performing various surface treatments on the substrate S in a vacuum atmosphere. As the substrate S, a substrate containing at least one of an organic substance such as resin and plastic, an inorganic substance such as glass and ceramics, a semiconductor such as silicon, and a metal such as a copper alloy, nickel, and titanium can be used. Further, the shape of the substrate S can be a circle, a rectangle, or any other appropriate shape as long as the size is within the range in which the surface treatment can be performed by the surface treatment machine 1.

Examples of the surface treatment performed by the surface treatment machine 1 include film formation by a chemical vapor deposition method (CVD) or a physical vapor deposition method (PVD) such as sputtering, plasma etching, and ashing (ashing) using plasma. Can be done. In the surface treatment machine 1 shown in FIG. 1, as surface treatment, a cleaning treatment of the surface of the substrate S using the plasma generator 11 and a thin film forming treatment on the surface of the substrate S by sputtering using the sputtering devices 12 and 13 are performed. Is sequentially performed for a plurality of substrates S.

The cleaning treatment of the present embodiment is physical cleaning using ultrasonic waves or plasma, and particularly includes cleaning the surface of the substrate S by plasma treatment using high-density plasma. However, in addition to the physical cleaning, a chemical cleaning using a detergent, an acid, an alkali or the like may be separately performed on the substrate S. On the other hand, as the sputtering used for the thin film forming process, an appropriate sputtering method such as magnetron sputtering, reactive sputtering or bias sputtering can be used. In the first embodiment, as the surface treatment of the substrate S, a cleaning treatment of the substrate S by plasma treatment using high-density plasma generated by the plasma generator 11 and a thin film formation by a bipolar sputtering method using a sputtering apparatus 12 are performed. The treatment and the thin film forming treatment by the bias sputtering of the bipolar sputtering method using the sputtering apparatus 13 are performed.

While these surface treatments are performed, the substrate S is held by the holder H of the rotating body 22. The rotating body 22 is configured to include an upper portion 221 having a plurality of holders H for holding the substrate S, and a shaft-shaped lower portion 222 hanging from the upper portion 221. The upper portion 221 and the lower portion 222 are integrally rotated. do. In the rotating body 22 shown in FIG. 1, the upper portion 221 is a carousel type rotating drum, and a plurality of holders H are provided on the side surface of the upper portion 221. The holder H shown in FIG. 1 mechanically holds the substrate S. For example, the holder H holds the substrate S by gripping the substrate S with a clamp provided on the holder H or engaging the substrate S with a protrusion provided on the holder H. Further, the holder H can apply a voltage to the substrate S for surface treatment, and in the first embodiment, at least plasma etching by the plasma generator 11, that is, cleaning treatment and bias sputtering by the sputtering apparatus 13 are performed. In, a bias voltage is applied to the substrate S. Further, the holder H may be provided with an insulator in order to insulate between the rotating body 22 and the substrate S. The insulator does not have to be integrated with the holder H and may be removed from the holder H. If the insulator can be removed from the holder H, the insulator may be attached to the holder H when the substrate S is mounted on the holder H.

The rotating body 22 is attached to a shaft 42 penetrating the central portion of the rotating body 22, and when the shaft 42 rotates, it rotates together with the shaft 42. One end of the shaft 42 is connected to the drive device 41, and the other end is rotatably attached to the fixed portion 43. The drive device 41 includes an electric motor (motor), a pulley, a belt, gears, and the like, and rotates the rotating body 22 by rotating the shaft 42 at a rotation speed of, for example, 1 rpm to 200 rpm. The rotation of the shaft 42 by the drive device 41 may be continuous constant speed rotation, and rotation and stop are performed at predetermined rotation angles (for example, 45 °, 90 °, 180 °, etc.) such as a stepping motor. It may be an intermittent rotation that repeats. In the following, an example of rotating the rotating body 22 at a constant speed will be described.

The cleaning process and the thin film forming process of the substrate S are performed in the housing 21 kept in a vacuum atmosphere by using, for example, a vacuum pump. In the surface treatment machine 1 shown in FIG. 1, the upper portion 221 of the rotating body 22 is provided in the housing 21, and an O-ring seal, a Wilson seal, and a magnetic fluid are provided between the housing 21 and the lower portion 222 of the rotating body 22. It is sealed by a seal 23 such as a seal or a bellows seal. The vacuum refers to a state in a space filled with a gas having a pressure lower than the normal atmospheric pressure (Japanese Industrial Standards JIS), but the housing realized by the surface treatment machine 1 of the present embodiment. The degree of vacuum in 21 is appropriately set according to the processing content, and can be applied to any degree of vacuum, for example, from a low vacuum of 100 kPa to 100 Pa to a high vacuum of 0.1 Pa to ^10-5 Pa. Further, in the surface treatment machine 1 shown in FIG. 1, the upper portion 221 of the rotating body 22 is provided in the housing 21, but not only a part of the rotating body 22 but the entire rotating body 22 is placed in the housing 21. The power feeding device 31 and / or the driving device 41 may be arranged in the housing 21.

FIG. 2 is a plan view of the surface treatment machine 1 shown in FIG. In the surface treatment machine 1, as shown in FIG. 2, the inside of the housing 21 is divided into four regions R1 to R4, and in the region R1, the processed substrate S is taken out and the unprocessed substrate S is carried in. In the region R2, the surface of the substrate S is cleaned, in the region R3, a thin film forming treatment by sputtering is performed, and in the region R4, a thin film forming treatment by bias sputtering is performed. Each region R1 to R4 is separated by a partition wall 211 shown by a broken line in FIG. 2, so that the processing in each region R1 to R4 does not affect the processing in other regions. Further, the pressure and temperature in each region R1 to R4 can be controlled independently by providing an independent control system in each region R1 to R4. Hereinafter, the processing for the substrate S in the regions R1 to R4 will be described.

The region R1 is a region for taking out the substrate S for which all the thin film forming treatments have been completed to the outside of the surface treatment machine 1, and at the same time, mounting the substrate S which has not been surface-treated on the empty holder H. be. By replacing the treated substrate S with the untreated substrate S in the region R1, the surface treatment machine 1 can continuously perform the surface treatment of the substrate S. The substrate S is taken out and carried in through the opening O (the ends E1 and E2 are shown in FIG. 2) provided on the side wall surface of the housing 21. The housing 21 communicates with equipment that can maintain airtightness, such as a load lock chamber (not shown), through the opening O, whereby the substrate S can be taken out from the housing 21 in the housing 21. The vacuum atmosphere is maintained.

The region R2 is a region for cleaning the substrate S using the plasma generator 11. That is, by injecting plasma particles generated by the plasma generator 11 onto the surface of the substrate S to be thin-film formed, for example, organic substances adhering to the surface of the substrate S are decomposed by ashing to form a thin film. Remove foreign matter from the surface of S. This cleans the surface of the substrate S and promotes the formation of a dense thin film. Further, in the cleaning process of the present embodiment, since the bias voltage is applied to the substrate S, the oxide layer on the surface of the substrate S can be removed by plasma etching in addition to ashing, thereby forming on the surface of the substrate S. Anchor effect appears on the thin film. In order to perform plasma etching, an inert gas such as argon (Ar) gas is introduced into the region R2, and the temperature of the substrate S is appropriately controlled by water cooling or the like so that the substrate S is not damaged by heat. do. When applying a voltage to the substrate S, for example, an AC power supply having a frequency of 400 kHz is used. It should be noted that the application of the bias voltage in the cleaning process and the plasma etching accompanying the application of the bias voltage are not indispensable, and the cleaning process of only ashing may be performed without applying the bias voltage.

The region R3 is a region for performing a thin film forming process using the sputtering apparatus 12. The sputtering apparatus 12 includes at least a sputtering target 121 for film formation and a backing plate 122 that supports the sputtering target 121. The sputtering target 121 includes metals such as aluminum, silver, titanium and nickel, oxides such as titanium dioxide, nitrides such as titanium nitride, carbides such as titanium carbide, silicon carbide and tungsten carbide, and sulfides such as zinc sulfide. And a target containing at least one of a resin such as a fluororesin can be used. The shape of the sputtering target is not particularly limited, and may be any shape such as a flat plate type or a cylindrical type. In order to perform sputtering, a discharge gas such as argon, oxygen, or nitrogen is introduced into the region R3, and the temperature of the substrate S is appropriately controlled by water cooling or the like so that the substrate S is not damaged by heat. ..

The region R4 is a region for forming a thin film on the surface of the substrate S by applying a bias voltage to the substrate S and then performing bias sputtering using the sputtering apparatus 13. The voltage applied to the substrate in bias sputtering can be set to an appropriate value in the range of −500V to 500V with respect to the anode used for sputtering, for example, in the case of a direct current power supply (DC). Further, like the sputtering device 12, the sputtering device 13 includes at least a sputtering target 131 and a backing plate 132. As the sputtering target 131, a target containing at least one of a metal, an oxide, a nitride, a carbide, a sulfide and a resin can be used as in the sputtering target 121, but the sputtering target 131 may be a target containing the sputtering target 121. It may be the same target or different targets. The environment of the region R4 is maintained under appropriate conditions so that the thin film can be formed by bias sputtering using the sputtering apparatus 13, as in the region R3.

An upper portion 221 of the rotating body 22 is provided in the central portion of the housing 21 divided into four regions R1 to R4 by the partition wall 211, and the shaft 42 penetrates the central portion of the upper portion 221 having a rotating drum shape. There is. The shaft 42 is rotated by the drive device 41 in the direction of arrow D about the point C, and the rotating body 22 including the upper portion 221 is rotated in the clockwise direction (that is, in the direction of arrow D) together with the shaft 42. The upper portion 221 of the rotating body 22 is provided with four holders H of H1 to H4 counterclockwise on its side surface, holds the substrates S1 to S4, and is connected to the power feeding conductors 33a in the holders H1 to H4. ~ 33d are connected. In the surface treatment machine 1 of the present embodiment, the rotating body 22 is rotated around the point C by the drive device 41 in the direction of the arrow D via the shaft 42, so that the plurality of substrates S1 to S4 can be changed from the substrate S1 to the substrate S1. Sequential processing is performed in the order of S2 → S3 → S4.

The upper portion 221 of the rotating body 22 rotates at a constant speed together with the shaft 42 without contacting the partition wall 211 defining the regions R1 to R4 with the substrate S held by the holders H1 to H4, and the regions R1 → R2 → R3. → R4 → R1 → R2 → ... The substrate S is sequentially conveyed. By doing so, for each substrate S1 to S4, the surface is repeated in the order of cleaning treatment (region R2) → thin film forming treatment (region R3) → thin film forming treatment (region R4) → cleaning treatment (region R2) → ... Perform processing. As an example of the surface treatment of the substrates S1 to S4, for example, in the situation of FIG. 2, the substrates S1 to S4 are held in the holders H1 to H4, and in the region R1, the surface treatment is applied to the substrate S1 held in the holder H1. On the other hand, in the region R2, the substrate S4 held in the holder H4 is subjected to surface cleaning treatment, in the region R3, the substrate S3 held in the holder H3 is subjected to a thin film forming treatment, and in the region R4, the holder H2 is performed. The substrate S2 held in the above is subjected to a thin film forming process by bias sputtering.

In this way, the cleaning treatment and the thin film forming treatment are repeated, and after the surface treatment of all the substrates S1 to S4 is completed, the constant speed rotation of the rotating body 22 is stopped, and the treated substrates S1 to S4 are passed through the opening O. And take it out from the surface treatment machine 1. At the same time, the substrates S that have not been surface-treated are mounted on the empty holders H1 to H4. For example, as shown in FIG. 2, the substrate S1 whose surface treatment has been completed in the region R1 is removed from the holder H1 and taken out from the surface treatment machine 1 through the opening O, and then the untreated substrate S5 is placed in the holder H1. Mount. After mounting the substrate S5, the rotating body 22 is rotated by a predetermined angle (for example, 90 °), the surface-treated substrate S2 is removed from the holder H2, and the substrate S2 is taken out from the surface treatment machine 1 through the opening O. After that, the unprocessed substrate S6 is mounted on the holder H2. The substrates S3 and S4 are also taken out from the surface treatment machine 1 in the same manner, and the untreated substrates S7 and S8 are mounted on the holders H3 and H4, respectively. Then, when the substrates S5 to S8 are mounted on the holders H1 to H4 and the preparation is completed, the rotating body 22 is rotated at a constant speed again, and the substrates are rotated in the order of regions R1 → R2 → R3 → R4 → R1 → R2 → ... S is sequentially conveyed, and the cleaning process (region R2) → thin film forming process (region R3) → thin film forming process (region R4) → cleaning process (region R2) → ... Is repeated for each substrate S5 to S8. Perform surface treatment.

The surface treatment machine 1 sequentially conveys a plurality of substrates S to the region R where processing is performed by rotating the upper portion 221 of the rotating body 22, but in the example of FIG. 2, the upper portion 221 is 1 rpm to 200 rpm. It keeps rotating at a rotation speed within the range of. Instead of this, after rotating by a predetermined angle (for example, 90 °), it stops without rotating until the processing in each region R1 to R4 is completed, and after the processing in each region R1 to R4 is completed, It may rotate again by a predetermined angle and stop. Such rotation of the upper portion 221 can be realized, for example, by rotating the shaft 42 by using a stepper motor for the drive device 41. The rotating body 22 shown in FIG. 2 includes four holders H, but the number of holders H is not particularly limited, and the area of the portion of the rotating body 22 on which the holder H can be arranged and the size of the substrate S to be processed are used. Therefore, an appropriate value can be set.

Returning to FIG. 1, the electric power for applying the bias voltage to the substrate S held by the rotating body 22 is supplied from the power supply 32 via the power feeding device 31. A brush 34 can be used as an electrical connection means (electric contact) between the power supply device 31 and the power supply 32. The brush 34 is connected to the power supply 32 by an appropriate means such as a conducting wire. The power supply 32 is, for example, an AC power supply having a frequency of 50 Hz to 400 MHz, particularly a long wave (LF) of 30 kHz to 300 kHz or an AC power supply having a high frequency (RF) frequency of 10 kHz to 100 MHz, a direct current power supply (DC), or a direct current power source (DC) or superimposition thereof. It may be a new one. Further, the waveform of the AC power supply may be any of a sine wave, a square wave, a sawtooth wave, a triangular wave, or a combination thereof. On the other hand, as the brush 34, for example, a metal brush or a carbon brush can be used. Further, a slip ring can be used instead of the brush 34. The feeding device 31 and the brush 34 do not necessarily have to be in contact with each other. For example, the feeding device 31 and the brush 34 may be separated from each other by 1 to 2,000 μm to provide a non-contact type feeding.

The power feeding device 31 of the present embodiment is attached to the shaft 42 as shown in FIG. 1, and the position of the power feeding device 31 in the rotation direction of the rotating body 22 as the shaft 42 rotates, that is, the rotation position of the power feeding device 31. Allows you to selectively switch between power supply and non-power supply. As a result, in the surface treatment performed by applying the bias voltage to the substrate S, such as the cleaning treatment of the substrate S by the plasma generator 11 and the bias sputtering by the sputtering apparatus 13, the voltage is selectively applied only to the substrate S to be subjected to the surface treatment. Is applied, or power can be selectively supplied only to the holder H that holds the substrate S on which the surface treatment is performed. As a result, the same surface treatment can be performed on the substrate S with less power as compared with the case where the bias voltage is uniformly applied to the substrate S without the surface treatment. The power feeding device 31 of the present invention can be attached to the shaft 42, or may be directly attached to the rotating body 22 such as the lower part 222 of the rotating body 22.

The power feeding device 31 has an insulator 311 and a plurality of conductors 312, and the plurality of conductors 312 are insulated from each other by the insulator 311 and electrically connected to the holder H by a plurality of conductor wires 33. As the insulator 311, use ceramics such as alumina and quartz, fluororesin such as polytetrafluoroethylene (PTFE), engineering plastics such as polyetheretherketone (PEEK), polyethylene, polypropylene, polyvinyl chloride and the like. Can be done. Further, by providing an air layer or a vacuum layer between the conductors 312, it can be used instead of the insulator 311. On the other hand, as the conductor 312, a metal such as aluminum, an aluminum alloy, copper, a copper alloy, gold, silver, or platinum, or carbon can be used.

FIG. 3 is a plan view of the power feeding device 31. The power feeding device 31 shown in FIG. 3 is circular when viewed in a plan view, and has four conductors 312a to 312d as a plurality of conductors 312, which are evenly distributed counterclockwise and in the circumferential direction. It is arranged at 4 points. The conductors 312a to 312d are insulated from each other by the insulator 311. Further, the conductors 33a to 33d are electrically connected to the conductors 312a to 312d, respectively, whereby electric power can be supplied to the holder H and a voltage can be applied to the substrate S. Here, the correspondence between the conductor 312 connected by the conductor 33 and the holder H is not particularly limited. For example, in the power feeding device 31 of FIG. 3, the conductors 312a, 312b, 312c, and 312d are the holders shown in FIG. 2, respectively. It corresponds to H1, holder H2, holder H3, and holder H4. That is, the conductor 312a is the holder H1 via the conductor 33a, the conductor 312b is the holder H2 via the conductor 33b, the conductor 312c is the holder H3 via the conductor 33c, and the conductor 312d is the holder H4 via the conductor 33d. Connected, the number of the plurality of conductors 312 is equal to the number of the plurality of holders H, and they are connected one-to-one. Alternatively, the number of the plurality of conductors 312 may be smaller than the number of the plurality of holders H, and two or more holders H may be connected to one conductor 312. The number of conductors 312 is not particularly limited and may be an appropriate number with respect to the number of holders H, and the shapes of the insulator 311 and the conductors 312 are not limited to the shapes shown in FIG. It can have an appropriate shape such as a circle or a rectangle.

In the surface treatment machine 1 of the present embodiment, the number and arrangement of the brushes 34 are not particularly limited, and can be appropriately arranged according to the surface treatment performed by the surface treatment machine 1. In the surface treatment machine 1 of the first embodiment, the power feeding device 31 and the power supply 32 are used by using two brushes, a brush 34a located on the right side and a brush 34b located on the left side when viewed in a plan view as shown in FIG. Is connected. Both the brushes 34a and 34b shown in FIG. 3 are connected to the power supply 32, but when a plurality of brushes 34 are used, it is not necessary that all the brushes 34 are connected to the same power supply 32, and each brush 34 does not need to be connected to the same power supply 32. May be connected to a different power source 32, or some brushes 34 may be connected to a different power source 32 than the other brushes 34. By connecting each brush 34 to a power source having a different configuration such as voltage, power, or frequency, the voltage, power, and / or frequency can be controlled for each surface treatment.

The power feeding device 31 of the present embodiment is attached to the shaft 42, and when the shaft 42 rotates in the direction of the arrow D about the point C, it rotates in the direction of the arrow D together with the shaft 42. When the power feeding device 31 rotates, the conductor 33 connected to the conductor 312 also rotates. On the other hand, since the power supply 32 and the brush 34 are separated from the shaft 42 and their positions are fixed, they do not rotate together with the power feeding device 31. Therefore, as the power feeding device 31 rotates in the direction of the arrow D, the brush 34a has the conductor 312a → insulator 311 → conductor 312b → insulator 311 → conductor 312c → insulator 311 → conductor 312d → insulator 311 → conductor 312a. → Insulator 311 → Conductor 312b ... The insulator 311 and the plurality of conductors 312 are alternately in contact with each other. Similarly, the brush 34b has a conductor 312c → an insulator 311 → a conductor 312d → an insulator 311 → a conductor 312a → an insulator 311 → a conductor 312b → an insulator 311 → a conductor 312c → an insulator 311 → a conductor 312d .... The insulator 311 and the plurality of conductors 312 will be in contact with each other in sequence.

In this way, the conductor 312 in contact with the brushes 34a and 34b is switched depending on the rotation position of the shaft 42 in the rotation direction, so that the power supply device 31 can switch the holder H for power supply and the substrate S for applying voltage. can. In the case of the power feeding device 31 shown in FIG. 3, in view of the correspondence between the conductor 312 and the holder H, as the power feeding device 31 rotates in the direction of the arrow D, the holders H1 and H3 → holder H2 and H4 → holder H1 and The holder H for supplying power is switched in the order of H3 → holder H2 and H4 → holder H1 and H3 → .... Further, by insulating the plurality of conductors 312 from each other with the insulator 311, for example, while the conductor 312a is connected to the brush 34a, the other conductors 312b to 312d and the brush 34a are not connected to the power supply 32. Power can be supplied only to the connected holder H and the substrate S. Further, since the brushes 34a and 34b are in contact with the insulator 311 while they are not in contact with the conductor 312, the holder H is unnecessarily connected to the power supply 32 to prevent the power supply state. In the power feeding device shown in FIG. 3, the outer peripheral portions of the insulator 311 come into contact with the brushes 34a and 34b. For example, the outer peripheral portions of the conductors 312a to 312d are extended in the radial direction, or the outer peripheral portion of the insulator 311 is radially extended. The outer peripheral portion of the insulator 311 may be prevented from coming into contact with the brushes 34a and 34b by denting the insulator. In this case, the air layer provided between the conductors 312a to 312d serves as an insulator.

Here, where the cleaning process is performed in the region R2 shown in FIG. 2 and the bias sputtering is performed in the region R4, for example, the positions of the holder H1 in FIG. 2 and the conductor 312a in FIG. 3 in the rotation direction D, and FIG. If the positions of the holder H3 and the conductor 312c of FIG. 3 correspond to each other in the rotation direction D, a voltage is selectively applied to the substrates S1 and S3 while the substrate S1 is subjected to the cleaning process and the substrate S3 is subjected to the bias sputtering. be able to. Further, since the conductors 312a to 312d are insulated from each other by the insulator 311, no voltage is applied to the substrates S2 and S4 while the bias voltage is applied to the substrates S1 and S3. That is, in the rotation direction D, the position where the cleaning process is performed on the substrate S1 and the position of the holder H1 holding the substrate S1 and the position where the conductor 312a connected to the holder H1 comes into contact with the brush 34a can be made to correspond to each other. For example, by using the power feeding device 31 of the present embodiment, it is possible to selectively apply a voltage to the substrate S1 to be cleaned. Further, in the rotation direction D, the position where the cleaning process is performed on the substrate S3, the position of the holder H3 holding the substrate S3, and the position where the conductor 312c connected to the holder H3 comes into contact with the brush 34b can be made to correspond to each other. For example, by using the power feeding device 31 of the present embodiment, it is possible to selectively apply a voltage to the substrate S3 that is subjected to the thin film forming process by bias sputtering. This also applies to the conductor 312b and the holder H2, and the conductor 312d and the holder H4.

In the surface treatment machine 1 of the present embodiment, the time for feeding the holder H can be controlled by adjusting the rotation speed of the shaft 42 and the length L1 of the outer peripheral portion of the conductor 312 of the feeding device 31. In the case of the power feeding device 31 of FIG. 3, assuming that the entire peripheral length of the outer peripheral portion of the feeding device 31 is L and the end portion A of the outer peripheral portion of the conductor 33a is the starting point of the rotation position, the rotation position 0 starting from the end portion A. By adjusting the positions of L1a to L1d (that is, the lengths of the outer peripheral portions L1a to L1d) between 1 and L, the time for supplying power to the holder H can be controlled. Instead of this, in the surface treatment machine 1 of the present embodiment, the rotation speed of the shaft 42, both ends of the outer peripheral portion of the conductor 312, and the rotation center C of the rotating body 22 form the rotation direction D of the rotating body 22. By adjusting the angle θ1, the time for supplying power to the holder H can be controlled. In the case of the power feeding device 31 of FIG. 3, assuming that the end A of the outer peripheral portion of the conductor 33a is the starting point of the rotation position, the outer circumferences of the conductors 312a to 312d are provided between the rotation angles of 0 ° and 360 ° starting from the end portion A. By adjusting the angles θ1a to θ1d of the rotation direction D of the rotating body 22 formed by both ends of the portion and the rotation center C of the rotating body 22, the time for supplying power to the holder H can be controlled. For example, when cleaning the substrate S1 held in the holder H1, the time for supplying power to the holder H1 and the cleaning of the substrate S1 using the set rotation speed of the shaft 42 and the time required for the cleaning process. The length L1a or the angle θ1a of the outer peripheral portion of the conductor 312a can be set so that the time required for the processing is equal to each other. This also applies to the lengths L1b to L1d and angles θ1b to θ1d of the outer peripheral portions of the other conductors 312b to 312d, and the thin film forming treatment by bias sputtering.

Further, in the power feeding device 31 shown in FIG. 3, the lengths L1a, L1b, L1c and L1d of the outer peripheral portion of the conductor 312 are the same, but these lengths may be different from each other, and the surface treatment performed by the surface treatment machine 1 is performed. Depending on the number of steps, particularly the number of steps and the required time thereof, the length of each conductor 312 can be appropriately set. Similarly, the angles θ1a, θ1b, θ1c and θ1d of the rotation direction D of the rotating body 22 formed by both ends of each outer peripheral portion of the conductors 312a to 312d and the rotation center C of the rotating body 22 are equal, but these angles are equal to each other. It may be different, and the angle may be appropriate for each conductor 312 depending on the surface treatment step performed by the surface treatment machine 1, particularly the number of steps and the required time thereof. That is, the lengths L1a to L1d and the angles θ1a to θ1d may be different from each other, and the plurality of conductors 312 are dispersed along the rotation direction D of the rotating body 22 with the insulator 311 sandwiched in the outer peripheral portion of the power feeding device 31. It suffices if they are arranged in a targeted manner. This makes it possible to control the time for applying the bias voltage for each surface treatment step.

Further, regarding the insulator 311 as well, the outer peripheral portion length L2a between the conductors 312a and 312b, the outer peripheral portion length L2b between the conductors 312b and 312c, the outer peripheral portion length L2c between the conductors 312c and 312d, and the conductor 312d The outer peripheral portion length L2d between the and 312a can be appropriately set according to the surface treatment step performed by the surface treatment machine 1. Similarly, the angle θ2a of the rotation direction D of the rotating body 22 formed by both ends of the outer peripheral portion between the conductors 312a and 312b and the rotation center C of the rotating body 22, and both ends of the outer peripheral portion between the conductors 312b and 312c. The rotating body 22 formed by the rotation center C of the rotating body 22 and the angle θ2b of the rotation direction D of the rotating body 22, both ends of the outer peripheral portion between the conductors 312c and 312d, and the rotation center C of the rotating body 22. The surface processing machine 1 performs the angle θ2d of the rotation direction D of the rotating body 22 formed by the angle θ2c of the rotation direction D of the above, and the rotation center C of the rotating body 22 and both ends of the outer peripheral portion between the conductors 312d and 312a. It can be appropriately set according to the surface treatment process. In the power feeding device 31 shown in FIG. 3, the lengths L2a, L2b, L2c and L2d are the same, but the lengths L2a to L2d may be different from each other. Similarly, the angles θ2a, θ2b, θ2c and θ2d are equal, but the angles θ2a to θ2d may be different from each other.

When setting the length L1 of the outer peripheral portion of the plurality of conductors 312 and the length L2 of the outer peripheral portion of the insulator 311, the length L3a of the portion where the power feeding device 31 and the brush 34a are in contact with each other and the power feeding device 31. Consider the length of the portion L3b in contact with the brush 34b. Similarly, when the angle θ1 and the angle θ2 are set, the angle θ3a in the rotation direction D of the rotating body 22 formed by the portion where the power feeding device 31 and the brush 34a are in contact with each other and the rotation center C of the rotating body 22 and the power feeding. Consider the angle θ3b of the rotation direction D of the rotating body 22 formed by the portion where the device 31 and the brush 34b are in contact with each other and the rotation center C of the rotating body 22.

The conductor 33 connecting the conductor 312 of the power feeding device 31 and the holder H may be arranged outside the rotating body 22, but the length of the conductor 33 is shortened and surface treatment using plasma or the like is applied to the conductor 33. It is more preferable to arrange at least a part of the conducting wire 33 inside the rotating body 22 in order to suppress the influence. An example of the arrangement of the conducting wire 33 in the rotating body 22 will be described with reference to FIG.

FIG. 4 is a cross-sectional view taken along the line AA (see FIG. 1) of the lower portion 222 of the rotating body 22. In the surface treatment machine 1 shown in FIG. 1, as shown in FIG. 4, the conducting wires 33a to 33d are arranged parallel to the rotation axis of the shaft 42, that is, perpendicular to the AA line. When the connected power feeding device 31 rotates together with the shaft 42, the conductors 33a to 33d also rotate in the direction of the arrow D with the point C as the center of rotation. Here, if a plurality of conductors are connected to each other in the rotating body 22, it becomes impossible to selectively supply power only to the holder H in which the substrate to be surface-treated is held. Therefore, the conductors 33a to 33d and the rotating body 22 An insulator 35 is provided between them. As the insulator 35, the same material as the insulator 311 can be used. That is, ceramics, fluororesins, and resins such as polyethylene, polypropylene, and polyvinyl chloride. Further, the conductors 33 may be insulated from each other by providing an air layer or a vacuum layer between the plurality of conductors 33 and the inside of the rotating body 22.

Next, the surface treatment process of the substrate S in the surface treatment machine 1 will be described with reference to FIGS. 5A to 5E. 5A to 5E are plan views showing a step of surface treatment for the substrate S using the surface treatment machine 1 shown in FIG. 1. 5A to 5E are plan views of the surface treatment machine 1 shown in FIG. 1 as in FIG. 2, and show the processing of the substrate S in each step. However, in (A) of FIGS. 5A to 5E, the illustration of the housing 21 is omitted for the sake of explanation. On the other hand, (B) of FIGS. 5A to 5E is a plan view of the power feeding device 31 and the brush 34 in the processing step of the substrate S shown in (A).

FIG. 5A shows the initial state of the surface treatment process for the substrate S. That is, as shown in FIG. 5A (A), the substrates S1 to S4 are mounted on the holders H1 to H4, respectively, the substrate S1 is in the region R1, the substrate S2 is in the region R4, and the substrate S3 is in the region R3. The substrate S4 is located in the region R2. Hereinafter, how the substrate S1 held by the holder H1 is surface-treated when the upper portion 221 of the rotating body 22 starts rotating at a constant speed clockwise will be described.

In FIG. 5A, the power feeding device 31 is in the arrangement shown in FIG. 5A (B), and the conductor 312a conducting with the holder H1 is not in contact with the brushes 34a and 34b. Therefore, since the bias power is not supplied to the holder H1, the plasma surface treatment is not performed on the substrate S1 located in the region R1.

FIG. 5B shows the first step of surface treatment for the substrate S1. From the state shown in FIG. 5A, the rotating body 22 rotates clockwise with respect to the center of rotation C by an angle α1, and as shown in FIG. 5B (A), the substrate S1 held by the holder H1 moves from the area R1 to the area R2. When transported, the power feeding device 31 has the arrangement shown in FIG. 5B (B). As a result, by connecting the brush 34a and the conductor 312a, electric power is supplied to the holder H1 via the conducting wire 33a. As a result, a bias voltage is applied to the substrate S1 held in the holder H1, and bias etching using the plasma generator 11 is performed.

FIG. 5C shows a second step of surface treatment for the substrate S1. From the state shown in FIG. 5B, the rotating body 22 rotates clockwise with respect to the center of rotation C by an angle α2, and as shown in FIG. 5C (A), the substrate S1 held by the holder H1 moves from the area R2 to the area R3. When transported, the power feeding device 31 has the arrangement shown in FIG. 5C (B). As a result, since the conductor 312a conducting with the holder H1 is not in contact with the brush 34a or 34b, power is not supplied to the holder H1. Therefore, the thin film forming process using the sputtering apparatus 12 is performed in a state where no voltage is applied to the substrate S1 conveyed to the region R3 and no bias voltage is applied.

FIG. 5D shows a third step of surface treatment for the substrate S1. From the state shown in FIG. 5C, the rotating body 22 rotates clockwise with respect to the center of rotation C by an angle α3, and as shown in FIG. 5D (A), the substrate S1 held by the holder H1 moves from the area R3 to the area R4. When transported, the power feeding device 31 has the arrangement shown in FIG. 5D (B). As a result, by connecting the brush 34b and the conductor 312a, electric power is supplied to the holder H1 via the conducting wire 33a. As a result, a bias voltage is applied to the substrate S1 held in the holder H1, and a thin film forming process by bias sputtering using the sputtering apparatus 13 is performed on the substrate S1.

FIG. 5E shows a fourth step of surface treatment for the substrate S1. From the state shown in FIG. 5D, the rotating body 22 rotates clockwise with respect to the center of rotation C by an angle α4, and as shown in FIG. 5E (A), the substrate S1 held by the holder H1 moves from the region R4 to the region R1. When transported, the arrangement of the power feeding device 31 returns to the initial state shown in FIG. 5A. The surface treatment of the substrate S forms one cycle in the above-mentioned first step to the fourth step, and the cycle is repeated by the surface treatment machine 1 until the surface treatment of each of the substrates S1 to S4 is completed.

As described above, by using the power feeding device 31 of the present embodiment, the substrate S can be used only when it is necessary to apply a voltage to the substrate S in the surface treatment, that is, when the substrate S is located in the region R2 or R4. It is possible to selectively supply power to the holder H to be held and selectively apply a voltage to the substrate S. On the other hand, when it is not necessary to apply a voltage to the substrate S in the surface treatment, that is, when the substrate S is located in the region R1 or R3, the power feeding device 31 of the present embodiment has the holder H for holding the substrate S. , Can be selectively unpowered. As a result, it is possible to obtain the same surface treatment effect on the substrate S with less power as compared with the case where all of the holders H1 to H4 are uniformly fed.

[Second Embodiment]
FIG. 6 is a front view showing a second embodiment of the surface treatment machine 1 including the power feeding device 31 according to the present invention. Unlike the surface treatment machine 1 of the first embodiment, in the surface treatment machine 1 of the second embodiment, the upper portion 221 of the rotating body 22 is not a rotating drum but a flat plate, and the holder H is placed on the upper surface of the upper portion of the rotating body 22. It is provided. The holder H in FIG. 6 is a recess, and the substrate S can be placed on the recess. However, the holder H is not limited to the recess, and for example, at least one pin may be provided on the upper surface of the upper portion of the rotating body 22 to support the substrate S by the pin, or the holder H may be provided on the upper surface of the upper portion of the rotating body 22. The substrate S may be gripped by using at least one clamp or the like.

Further, in the surface treatment machine 1 of the first embodiment, the plasma generator 11 and the sputtering devices 12 and 13 are arranged on the side surface of the housing 21, but in the surface treatment machine 1 of the second embodiment, these devices are arranged. Is arranged on the upper surface of the housing 21. A partition wall 211 extends in the vertical direction from each device, and the cleaning process using the plasma generator 11 and the thin film forming process using the sputtering devices 12 and 13 do not affect the processes of the other devices. It has become like. Here, in the first embodiment, the thin film forming process by the sputtering apparatus 13 is a bias sputtering method, but in the second embodiment, the bias voltage is not applied to the substrate S in the thin film forming process by the sputtering apparatus 13.

In addition, the power supply device 31 and the power supply 32 are connected to only one point of the contact P. A non-contact power feeding method is used for the electrical connection between the power feeding device 31 and the power supply 32 at the contact P. The non-contact power feeding method is not particularly limited, and an appropriate method capable of applying a voltage required for surface treatment such as a cleaning treatment or a thin film forming treatment to the substrate S can be used. The non-contact power supply can suppress the generation of wear powder due to the contact between the power supply device 31 and the brush 34. Further, in the surface treatment machine 1 of the first embodiment, the rotating body 22 is indirectly directly attached to the drive device 41 via the shaft 42, but the surface treatment machine 1 of the second embodiment has the shaft 42. 22 does not exist, and the rotating body 22 is directly attached to the drive device 41 by a shaft-shaped shaft portion 223 that further hangs from the lower portion 222 of the rotating body 22.

FIG. 7 is a plan view of the surface treatment machine 1 shown in FIG. As shown in FIG. 7, the upper portion 221 of the rotating body 22 is circular in a plan view, and is provided with eight holders H of H1 to H8 in a counterclockwise direction. The plasma generator 11 and the sputtering devices 12 and 13 used for the surface treatment of the substrate S are shown by a broken line in FIG. 7, and the cleaning treatment is performed on the substrate S included in the frame 11 of the broken line. A thin film forming process is performed on the substrate S contained in the frame 12 or 13. For example, assuming that the substrates S1 to S8 are held in the holders H1 to H8 in FIG. 7, a bias voltage is applied to the substrates S8 included in the broken line frame 11 via the holder H8. The surface of the substrate S8 is cleaned by incident the plasma particles generated by the plasma generator 11. Further, the substrate S6 contained in the broken line frame 12 and the substrate S4 contained in the broken line frame 13 are subjected to thin film forming processing by the sputtering devices 12 and 13, respectively.

In the surface treatment machine 1 of the second embodiment, the rotating body 22 is rotated around the point C in the direction of the arrow D (that is, in the clockwise direction), so that the plurality of substrates S1 to S8 are subjected to the substrate S1 → S2. → S3 → S4 → S5 → S6 → S7 → S8, in that order, the cleaning process and the thin film forming process are performed. A drive device 41 (shown in FIG. 6) is used for the rotation of the rotating body 22. The substrate S for which the thin film forming process has been completed is taken out from the opening O (the ends E1 and E2 are shown in FIG. 2) provided on the side wall surface of the housing 21. Then, the substrate S that has not been surface-treated is placed on the empty holder H in place of the substrate S that has been surface-treated. By doing so, the surface treatment of the substrate S can be continuously performed. The housing 21 communicates with equipment that can maintain airtightness, such as a load lock chamber (not shown), through the opening O, whereby the substrate S can be taken out from the housing 21 in the housing 21. The vacuum atmosphere is maintained.

FIG. 8 is a plan view of the power feeding device 31 shown in FIG. The power feeding device 31 shown in FIG. 6 has a circular shape when viewed in a plan view, and has eight conductors 312a to 312h as a plurality of conductors 312, which are counterclockwise and circumferentially. It is arranged with 8 points of equal distribution. The conductors 312a to 312h are insulated from each other by the insulator 311. Further, the conductors 33a to 33h are electrically connected to the conductors 312a to 312h, respectively, whereby electric power can be supplied to the holder H and a bias voltage can be applied to the substrate S. In the power feeding device of FIG. 8, the conductor 312a is the holder H1 via the conductor 33a, the conductor 312b is the holder H2 via the conductor 33b, the conductor 312c is the holder H3 via the conductor 33c, and the conductor 312d is via the conductor 33d. The holder H4, the conductor 312e is the holder H5 via the conductor 33e, the conductor 312f is the holder H6 via the conductor 33f, the conductor 312g is the holder H7 via the conductor 33g, and the conductor 312h is via the conductor 33h. It is connected to the holder H8, the number of the plurality of conductors 312 is equal to the number of the plurality of holders H, and they are connected one-to-one. The number of holders H and the number of conductors 312 may be different, and a plurality of holders H may be connected to one conductor 312. Further, a part of the holder H does not have to be connected to the conductor 312, and in this case, no voltage is applied to the substrate S held by the holder H which is not connected to the conductor 312.

The power feeding device 31 is attached to the shaft portion 223 of the rotating body 22, and when the rotating body 22 rotates in the direction of the arrow D about the point C, it rotates together with the rotating body 22. When the power feeding device 31 rotates, the conductor 33 connected to the conductor 312 also rotates. On the other hand, the power supply 32 and the contact P are separated from the rotating body 22 and do not rotate together with the power feeding device 31. Therefore, as the power feeding device 31 rotates in the direction of the arrow D, the contact P becomes the conductor 312a → insulator 311 → conductor 312b → insulator 311 → conductor 312c → insulator 311 → conductor 312d → insulator 311 → conductor 312e →. Insulator 311 → Conductor 312f → Insulator 311 → Conductor 312g → Insulator 311 → Conductor 312h → Insulator 311 → Conductor 312a → Insulator 311 → Conductor 312b → ... Will be in contact with each other in sequence.

In this way, the conductor 312 in contact with the contact P is switched along with the position of the power feeding device 31 in the rotation direction of the rotating body 22, so that the power feeding device 31 uses the holder H to supply power and the substrate S to which the bias voltage is applied. You can switch. In the case of the power feeding device 31 shown in FIG. 8, in view of the correspondence between the conductor 312 and the holder H, as the power feeding device 31 rotates in the direction of the arrow D, the holder H1 → H2 → H3 → H4 → H5 → H6 → The holder H that supplies power is switched in the order of H7 → H8 → H1 → H2 → .... Further, by insulating the plurality of conductors 312 from each other with the insulator 311, for example, while the conductor 312a is connected to the power supply 32 via the contact P, the power supply 32 can be connected to the other conductors 312b to 312h. Instead, power can be supplied only to the holder H and the board S connected to the power supply 32. Further, since the contact P is in contact with the insulator 311 while it is not in contact with the conductor 312, the holder H is unnecessarily connected to the power supply 32 to prevent the power supply state.

Here, as described above, where the substrate S included in the broken line frame 11 shown in FIG. 7 is cleaned, for example, the position of the holder H1 shown in FIG. 7 in the rotation direction D and the position shown in FIG. 8 are shown in FIG. If the position of the conductor 312a in the rotation direction D corresponds to the position, the bias voltage can be applied to the substrate S1 while the substrate S1 is cleaned. Further, since the conductors 312a to 312h are insulated from each other by the insulator 311, no voltage is applied to the other substrates S2 to S8 while the bias voltage is applied to the substrate S1. That is, in the rotation direction D, the position where the cleaning process is performed on the substrate S1 and the position of the holder H1 holding the substrate S1 and the position where the conductor 312a connected to the holder H1 comes into contact with the contact P can be made to correspond to each other. For example, by using the power feeding device 31 of the present embodiment, it is possible to selectively apply a voltage to the substrate S1 to be cleaned. This also applies to the other conductors 312b to 312h and the holders H2 to H8.

Further, similarly to the power feeding device 31 according to the first embodiment, in the power feeding device 31 according to the second embodiment, the rotation speed of the rotating body 22 and the length L1 of the outer peripheral portion of the conductor 312 of the feeding device 31 are adjusted. By doing so, it is possible to control the time for supplying power to the holder H. In the case of the power feeding device 31 of FIG. 8, assuming that the entire peripheral length of the outer peripheral portion of the feeding device 31 is L and the end portion A of the outer peripheral portion of the conductor 33a is the starting point of the rotation position, the rotation position 0 starting from the end portion A. By adjusting the positions of L1a to L1h (that is, the lengths of the outer peripheral portions L1a to L1h) between 1 and L, the time for supplying power to the holder H can be controlled. Alternatively, in the power feeding device 31 according to the second embodiment, the time for supplying power to the holder H can be controlled by adjusting the rotation speed of the rotating body 22 and the angle θ1. In the case of the power feeding device 31 of FIG. 8, assuming that the end A of the outer peripheral portion of the conductor 33a is the starting point of the rotation position, the outer circumferences of the conductors 312a to 312h are provided between the rotation angles of 0 ° and 360 ° starting from the end portion A. By adjusting the angles θ1a to θ1h of the rotation direction D of the rotating body 22 formed by both ends of the portion and the rotation center C of the rotating body 22, the time for supplying power to the holder H can be controlled. For example, when the substrate S1 held in the holder H1 is cleaned, the time for supplying power to the holder H1 and the time required for the cleaning process using the set rotation speed of the rotating body 22 and the time required for the cleaning process and the time required for the substrate S1 are supplied. The length L1a or the angle θ1a of the outer peripheral portion of the conductor 312a can be set so that the time required for the cleaning process is equal to each other. Further, similarly to the power feeding device 31 according to the first embodiment, the lengths L1a to L1h and the angles θ1a to θ1h of the outer peripheral portion of the conductor 312, and the outer peripheral portion lengths L2a to L2h and the angles θ2a to θ2h of the insulator 311 are set. The length may be appropriate depending on the number of surface treatment steps performed by the surface treatment machine 1, particularly the number of steps and the required time thereof.

[Embodiments of the present invention]
As described above, according to the power feeding device 31 of the present embodiment, when the surface treatment machine 1 sequentially performs surface treatment on a plurality of substrates S, the rotating body 22 that supplies electric power to the substrates S is directly or indirectly treated. The electric power attached and supplied from the power supply 32 is supplied to the substrate S held by the rotating body 22, and power feeding and non-power feeding can be selectively switched depending on the rotation position of the rotating body 22 in the rotation direction. As a result, when a voltage is applied to the substrate S to perform surface treatment, power can be selectively supplied only to the substrate S to be surface-treated, and as a result, the substrate S not to be surface-treated, And, as compared with the case where power is uniformly supplied to the substrate S to be surface-treated without applying a voltage, the same surface treatment can be performed with less power.

Further, according to the power feeding device 31 of the present embodiment, electric power can be supplied from the power supply 32 to the rotating body 22 by non-contact power feeding. This eliminates the need to install wiring for power supply in the surface treatment machine 1. Further, it is possible to suppress the generation of wear dust due to the contact between the power feeding device 31 and the brush 34, and the device can be kept clean.

Further, according to the power feeding device 31 of the present embodiment, the insulator 311 and the plurality of conductors 312 are provided, and the plurality of conductors 312 are discretely arranged along the rotation direction of the rotating body 22 at a predetermined rotation position. It can be sequentially connected to the power supply 32. As a result, electric power can be selectively supplied only to the substrate S to which a voltage needs to be applied as the rotating body 22 or the shaft 42 rotates. In addition to this, by insulating the plurality of conductors 312 with the insulator 311, it is possible to change the type of the power supply 32 connected to each conductor 312.

Further, according to the power feeding device 31 of the present embodiment, the shape of the power feeding device 31 is circular when viewed in a plan view, and a plurality of conductors 312 are connected to the power supply 32 at the outer peripheral portion, and both ends of the outer peripheral portion and the rotating body. The angle in the rotation direction of the rotating body formed by the center of rotation of the above can be set so that the time for surface treatment on the substrate and the time for supplying power to the substrate are equal to each other. This makes it possible to avoid unnecessary power supply to the substrate S.

Further, according to the power feeding device 31 of the present embodiment, the plurality of conductors 312 can be sequentially connected to the plurality of power sources 32. By using the power supply 32 having a different voltage, power, and / or frequency for each surface treatment, the bias voltage and / or the supply power can be controlled for each surface treatment.

Further, according to the surface treatment machine 1 using the power feeding device 31 of the present embodiment, the housing 21 for holding at least a part of the rotating body 22 in a vacuum atmosphere is provided, and the rotating body 22 holds the substrate S. However, a plurality of holders H for applying a voltage can be provided, and a plurality of conductors 33 for connecting the plurality of holders H and the plurality of conductors 312 can be provided. As a result, the surface treatment of the substrate S held by the holder H of the rotating body 22 can be performed in a vacuum atmosphere.

Further, according to the surface treatment machine 1 using the power feeding device 31 of the present embodiment, the number of conductors 312 is equal to the number of holders H, and the conductors 312 are connected to the holder H on a one-to-one basis. As a result, electric power can be selectively supplied only to the substrate S to which a voltage needs to be applied as the rotating body 22 or the shaft 42 rotates.

1 ... Surface treatment machine 11 ... Plasma generator 12, 13 ... Sputtering device 121, 131 ... Sputtering target 122, 132 ... Backing plate 21 ... Housing 211 ... Partition wall 22 ... Rotating body 221 ... Upper 222 ... Lower 223 ... Shaft 23 ... Seal 31 ... Power supply device 311 ... Insulator 312, 312a, 312b, 312c, 312d, 312e, 312f, 312g, 312h ... Conductor 32 ... Power supply 33, 33a, 33b, 33c, 33d, 33e, 33f, 33g, 33h ... Conductor wires 34, 34a, 34b ... Brush 35 ... Insulator 41 ... Driver 42 ... Shaft 43 ... Fixed part A ... Start point C of rotation position ... Rotation center D ... Rotation direction E1, E2 ... Ends H, H1, H2, H3, H4, H5, H6, H7, H8 ... Holders L1, L1a, L1b, L1c, L1d, L1e, L1f, L1g, L1h ... Lengths of the outer peripheral portion of the conductor L2a, L2b, L2c, L2d, L2e, L2f, L2g, L2h ... Length of outer peripheral portion of insulator O ... Opening P ... Contact R1 ... First region R2 ... Second region R3 ... Third region R4 ... Fourth region S, S1, S2, S3, S4, S5 , S6, S7, S8 ... Substrate α1, α2, α3, α4 ... Rotation angle θ1a, θ1b, θ1c, θ1d, θ1e, θ1f, θ1g, θ1h ... Angle (conductor)
θ2a, θ2b, θ2c, θ2d, θ2e, θ2f, θ2g, θ2h ... Angle (insulator)
θ3a, θ3b ... Angle (brush)

Claims (7)

A power supply device used in a surface treatment machine that sequentially surface-treats a plurality of substrates.
It is attached directly or indirectly to the rotating body that supplies electric power to the substrate, and the electric power supplied from the power source is supplied to the substrate held by the rotating body.
A power supply device for a surface treatment machine that selectively switches between power supply and non-power supply according to the rotation position of the rotating body in the rotation direction. The power supply device for a surface treatment machine according to claim 1, wherein electric power is supplied from the power source to the rotating body by non-contact power supply. Equipped with insulators and multiple conductors,
The surface treatment according to claim 1 or 2, wherein the plurality of conductors are discretely arranged between the insulators along the rotation direction of the rotating body and are sequentially connected to the power supply at a predetermined rotation position. Power supply device for machines. It is circular when viewed in a plan view,
The plurality of conductors are connected to the power supply at the outer peripheral portion,
The angle in the rotation direction of the rotating body formed by both ends of the outer peripheral portion and the rotation center of the rotating body is an angle at which the time for surface treatment on the substrate and the time for supplying power to the substrate are equal to each other. The power supply device for a surface treatment machine according to claim 3. The power supply device for a surface treatment machine according to claim 3 or 4, wherein the plurality of conductors are sequentially connected to a plurality of power sources. The power supply device according to any one of claims 1 to 5.
A housing that holds at least a part of the rotating body in a vacuum atmosphere,
A plurality of holders provided on the rotating body for holding the substrate and supplying electric power, and
A surface treatment machine comprising a plurality of conductors connecting the plurality of holders and the plurality of conductors. The surface treatment machine according to claim 6, wherein the number of conductors is equal to the number of the holders, and the conductors are connected to the holders on a one-to-one basis.

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