TWI793727B - Power supply device and surface treatment machine - Google Patents

Abstract

A power supply device (31) and a surface treatment machine (1) using the power supply device (31) are provided, the power supply device (31) performs surface treatment on a substrate (S) to which a voltage has been applied, and sequentially processes In the case of multiple substrates (S), power efficiency can be improved by increasing the power density of the substrates (S) to be processed. The power supply device (31) is a power supply device (31) used in a surface treatment machine (1) that sequentially performs surface treatment on a plurality of substrates (S), and is installed on a rotating body ( 22), and supply the power supplied from the power supply (32) to the substrate (S) held by the rotating body (22); selectively switch between power supply and non-power supply according to the rotation angle of the rotating body (22).

Description

Power supply device and surface treatment machine

The present invention relates to a power supply device and a surface treatment machine using the power supply device. The power supply device is especially suitable for a surface treatment machine for surface treatment of substrates in a vacuum environment.

There is a known technology (Patent Document 1) that includes a vacuum chamber, a substrate position selection mechanism, and a film forming device with a power supply. The vacuum chamber includes a film forming area with a sputtering film forming source and a reactive gas source. In the reaction area, the position of the substrate can be selected as the film formation area or the reaction area by means of the substrate position selection mechanism. When converting the metal thin film into a compound film in the reaction area, a high-frequency bias voltage is continuously applied to the substrate during the two steps of the deposition step and the conversion step. In this way, the substrate becomes a negative potential by the self-bias, and ions containing active species in the reaction gas are induced by the substrate and adhere to the metal thin film reliably. In addition, the energy retained by the positive ions can be used to convert the metal film to the compound film, thereby promoting the reaction of the compound. Furthermore, by drawing in ions, the reactivity becomes high, and the film formation rate can be increased.

[Prior Art Literature]

[Patent Document]

[Patent Document 1] Patent No. 4613015

[Problem to be solved by the invention]

In this known technology, the power supply and non-power supply to the substrate can be switched by a switch provided between the rotating drum and the power supply, but in the case of sequentially processing multiple substrates, the multiple substrates held by the rotating drum Simultaneously apply voltage. Therefore, when thin films are sequentially formed on a plurality of substrates by sputtering, power is supplied not only to substrates undergoing thin film formation processing but also to substrates waiting for processing or after processing. In this case, if the supplied electric power is a constant value, the electric power supplied per unit area of the substrate, that is, the electric power density decreases, and the electric power efficiency decreases. As a result, there is a problem that the efficacy of the surface treatment obtained by supplying electric power deteriorates.

The problem to be solved by the present invention is to provide a power supply device and a surface treatment machine using the power supply device. When substrates are processed sequentially, increasing the power density of the processed substrates can improve power efficiency. [means used to solve problems]

The present invention solves this problem by using a power supply device for a surface treatment machine. The power supply device for a surface treatment machine is a power supply device used in a surface treatment machine that sequentially performs surface treatment on a plurality of substrates. It is: directly or indirectly Installed on the rotating body that supplies power to the substrate, and supplies the substrate held by the rotating body with the power supplied from the power supply; according to the rotating position of the rotating body, selectively switch between power supply and non-power supply.

In this invention, the power supply device for the surface treatment machine is a non-contact power supply, and it is preferable to supply power from the power supply to the rotating body.

In this invention, the power supply device for the surface treatment machine includes an insulator and a plurality of conductors; the plurality of conductors are arranged between the insulators, distributed along the rotation direction of the rotator, and connected to the power supply at a predetermined rotation position Sequential connections are better.

In this invention, in plan view, the power supply device is circular; the plurality of conductors are connected to the power supply at the outer periphery; The time becomes an equal angle, which is preferably formed between the two ends of the outer peripheral portion and the center of rotation of the rotating body.

In the invention, it is preferable that the plurality of conductors are sequentially connected with the plurality of power sources.

In addition, the present invention solves this problem by using a surface treatment machine, which includes: the power supply device; a frame that holds at least a part of the rotating body in a vacuum environment; a plurality of clamps that hold the substrate, and It is arranged on the rotating body for supplying electric power; and a plurality of wires are connected to the plurality of clamps and the plurality of conductors.

In this invention, the number of conductors is equal to the number of the clamps, and it is better to connect the conductors and the clamps in a one-to-one manner. [Efficacy of the invention]

According to the present invention, in the case of sequentially processing a plurality of substrates in surface treatment of a substrate to which a voltage is applied, electric power can be selectively supplied to the substrates to be processed. Thereby, the electric power density of the substrate to be processed is increased, and the electric power efficiency can be improved.

Hereinafter, embodiments of the present invention will be described based on the drawings. In addition, the embodiment described below is purely an example, does not limit the present inventor, and can be changed in an appropriate range. [First Embodiment]

Fig. 1 is a front view showing a first embodiment of a surface treatment machine including a power supply device according to the present invention. The surface treatment machine 1 of this embodiment is a device for performing various surface treatments on the substrate S in a vacuum environment. As the substrate S, a substrate including at least one of organic matter, inorganic matter, semiconductor, and metal can be used, the organic matter-based resin or plastic, the inorganic-based glass or ceramics, the semiconductor-based silicon, etc., the metal-based copper alloy, Nickel, titanium, etc. In addition, the shape of the substrate S may be circular, rectangular, or other appropriate shapes as long as it is within the range in which the surface treatment machine 1 can perform surface treatment.

As the surface treatment performed by the surface treatment machine 1, for example, film formation by chemical vapor deposition (CVD) or physical vapor deposition (PVD) such as sputtering, plasma etching, and ash using plasma are exemplified. (ashing). In the surface treatment machine 1 shown in FIG. 1, as a surface treatment, the cleaning treatment of the surface of the substrate S and the thin film formation treatment of the surface of the substrate S by sputtering are performed sequentially on a plurality of substrates S. The plasma generator 11 was used for the cleaning process, and the sputtering devices 12 and 13 were used for the thin film formation process.

The cleaning treatment in this embodiment is physical cleaning using ultrasonic waves or plasma, especially including plasma treatment using high-density plasma to clean the surface of the substrate S. However, not only physical cleaning but also chemical cleaning using cleaning agents, acids, alkalis, etc. may be performed on the substrate S separately. On the other hand, suitable sputtering methods such as magnetron sputtering, reactive sputtering, or bias sputtering can be used as the sputtering used in the thin film formation process. In the first embodiment, as the surface treatment of the substrate S, the cleaning treatment of the substrate S by plasma treatment, the thin film formation treatment of the bipolar sputtering method, and the bias sputtering by the bipolar sputtering method are performed. Plated thin film forming process, the cleaning process uses the high-density plasma generated by the plasma generator 11, the film forming process of the bipolar sputtering method uses the sputtering device 12, the bipolar sputtering method The thin film formation process by bias sputtering uses the sputtering device 13 .

During these surface treatments, the substrate S is held by the holder H of the rotating body 22 . The rotating body 22 is configured to include an upper part 221 and a shaft-shaped lower part 222. The upper part 221 has a plurality of clamps H for clamping the substrate S. The lower part 222 hangs down from the upper part 221. The upper part 221 and the lower part 222 are rotate in one piece. In the rotating body 22 shown in FIG. 1 , the upper part 221 is a rotating disc type rotating drum, and a plurality of clamps H are arranged on the side of the upper part 221 . The jig H shown in FIG. 1 clamps the substrate S mechanically. For example, the jig H clamps the substrate S by clamping plates included in the jig H, or by engaging the substrate S with a protrusion included in the jig H. In addition, the jig H can apply a voltage to the substrate S for surface treatment, and in the first embodiment, at least in the plasma etching (i.e., cleaning process) by the plasma generating device 11 and the offset by the sputtering device 13 For sputtering, a bias voltage is applied to the substrate S. Furthermore, the jig H may be equipped with an insulator in order to insulate between the rotating body 22 and the board|substrate S. When the insulator is detachable from the jig H, when the substrate S is mounted on the jig H, the insulator may be attached to the jig H at the same time.

The rotating body 22 is attached to a shaft 42 and rotates together with the shaft 42 when the shaft 42 rotates. The shaft 42 penetrates through the center of the rotating body 22 . One end of the shaft 42 is connected to the driving device 41 , and the other end is rotatably attached to the fixed portion 43 . The driving device 41 includes a motor, pulleys, belts, gears, etc., and rotates the rotating body 22 by rotating the shaft 42 at a rotational speed of, for example, 1 rpm to 200 rpm. The rotation system of the shaft 42 of the drive device 41 can also be a continuous constant speed rotation, or it can be intermittent like a stepping motor every predetermined rotation angle (such as 45°, 90°, 180°, etc.) turn. Hereinafter, an example in which the rotating body 22 is rotated at a constant speed will be described.

The cleaning treatment and thin film formation treatment of the substrate S are performed in the housing 21 held in a vacuum environment using, for example, a vacuum pump. In the surface treatment machine 1 shown in FIG. 1 , the upper part 221 of the rotating body 22 is arranged in the frame body 21, and the space between the frame body 21 and the lower part 222 of the rotating body 22 is sealed by an O-ring or a Wilson (Wilson) seal. , Magnetic fluid seal, telescopic seal, etc. are sealed by seal 23. In addition, the vacuum refers to the state in which the space is filled with a gas with a pressure lower than the general atmospheric pressure (Japanese Industrial Standard JIS), and the degree of vacuum in the housing 21 realized by the surface treatment machine 1 of this embodiment It is properly set according to the processing content, and can be applied to all vacuum degrees such ^{as low vacuum of 100kPa~100Pa to high vacuum of 0.1Pa~10-5 Pa} . Also, in the surface treatment machine 1 shown in FIG. 1 , the upper part 221 of the rotating body 22 is arranged in the frame body 21, but it is not only a part of the rotating body 22, but the whole of the rotating body 22 may be arranged. in the frame 21. In addition, the power supply device 31 and/or the driving device 41 may also be arranged in the frame body 21 .

FIG. 2 is a plan view of the surface treatment machine 1 shown in FIG. 1 . In the surface treatment machine 1, as shown in Figure 2, the inside of the frame 21 is divided into four regions R1~R4, and in the region R1, the unprocessed substrate S is taken out and the unprocessed substrate S is carried in. , in the area R2, the surface of the substrate S is cleaned, in the area R3, the film formation process by sputtering is performed, and in the area R4, the film formation process by the bias sputtering is performed. The regions R1-R4 are separated by the partition wall 211 shown by the dotted line in FIG. 2, and the processing in each region R1-R4 will not affect the processing in other regions. In addition, the pressure and temperature in each region R1~R4 can be independently controlled by setting an independent control system in each region R1~R4. Hereinafter, the processing of the substrate S in the regions R1 to R4 will be described respectively.

The area R1 is an area for taking out all the substrates S that have been subjected to the thin film forming process to the outside of the surface treatment machine 1 and simultaneously loading the substrates S that have not yet been surface-treated on the empty holder H. In the area R1, by exchanging the processed substrate S with the unprocessed substrate S, the surface treatment machine 1 can continuously perform the surface treatment of the substrate S. The substrate S is taken out and carried in through the opening O (ends E1 and E2 are shown in FIG. 2 ) provided on the side wall surface of the frame body 21 . In addition, the frame body 21 communicates with equipment capable of maintaining the airtightness of an unillustrated load-in/load-out chamber and the like through the opening O, whereby the frame body 21 is also maintained when the substrate S is taken out from the frame body 21 . Inner vacuum environment.

The region R2 is a region for cleaning the substrate S using the plasma generator 11 . That is, the particles of the plasma generated by the plasma generating device 11 are injected into the surface of the substrate S subjected to the thin film formation process, thereby decomposing, for example, organic substances attached to the surface of the substrate S by ashing, and then forming the thin film. Foreign matter is removed from the surface of the substrate S. Thereby, the surface of the substrate S is cleaned, and the formation of a dense thin film is promoted. In addition, in the cleaning process of this embodiment, because the bias voltage is applied to the substrate S, the oxide layer on the surface of the substrate S can be removed not only by ashing but also by plasma etching, whereby the surface of the substrate S The formed film exhibits an anchor effect. For plasma etching, an inert gas such as argon (Ar) is introduced into the region R2, and the temperature of the substrate S is appropriately controlled by water cooling or the like in order to prevent the substrate S from being damaged by heat. When applying a voltage to the substrate S, for example, an AC power supply with a frequency of 400 kHz is used. In addition, the application of the bias voltage in the cleaning process and the accompanying plasma etching are not essential, and the cleaning process of only ashing may be performed without applying the bias voltage.

The region R3 is a region for performing the thin film formation process using the sputtering device 12 . The sputtering device 12 includes at least a sputtering target 121 for film formation and a support plate 122 supporting the sputtering target 121 . As the sputtering target 121, a target can be used, which contains at least one of metal, oxide, nitride, carbide, sulfide, and resin, the metal is aluminum, silver, titanium, nickel, etc., and the oxide is titanium dioxide. etc., the nitride is titanium nitride, etc., the carbide is titanium carbide, silicon carbide, tungsten carbide, etc., the sulfide is zinc sulfide, etc., and the resin is fluororesin. Moreover, the shape of a sputtering target is not specifically limited, Arbitrary shapes, such as a flat plate shape and a cylindrical shape, may be sufficient. For sputtering, discharge gas such as argon, oxygen, and nitrogen is introduced into the region R3, and the temperature of the substrate S is appropriately controlled by water cooling or the like in order to prevent the substrate S from being damaged by heat.

The region R4 is a region for forming a thin film on the surface of the substrate S by not only applying a bias voltage to the substrate S but also performing sputtering using the sputtering device 13 . The voltage applied to the substrate S in the bias sputtering is, for example, a direct current power supply (DC), and an appropriate value can be set in the range of -500V to 500V for the anode used in the sputtering. Moreover, like the sputtering device 12 , the sputtering device 13 includes at least a sputtering target 131 and a support plate 132 . In the sputtering target 131, like the sputtering target 121, a target comprising at least one of metal, oxide, nitride, carbide, sulfide, and resin can be used, but the sputtering target 131 can also be the same as the sputtering target. 121 The same target may also be a different target. In addition, the environment of the region R4 is maintained at an appropriate condition as in the region R3, and the appropriate condition enables thin film formation by bias sputtering using the sputtering device 13.

In the central part of the frame body 21 divided into four regions R1-R4 by the partition wall 211, the upper part 221 of the rotating body 22 is arranged, and the shaft 42 penetrates the central part of the upper part 221 in the shape of a rotating drum. The shaft 42 is rotated in the direction of the arrow D around the point C by the driving device 41, and the rotating body 22 including the upper part 221 is rotated in the clockwise direction (ie, the direction of the arrow D) together with the shaft 42 . The upper part 221 of the rotating body 22 is tied to its side, and there are four clamps H1~H4 in the counterclockwise direction, clamping the substrates S1~S4, and the wires 33a~33d for power supply are connected to each holder H1~H4. In the surface treatment machine 1 of this embodiment, the rotating body 22 is rotated in the direction of the arrow D around the point C by the driving device 41 via the shaft 42, thereby, for the plurality of substrates S1~S4, according to the substrate S1→ The sequence of S2→S3→S4 is processed sequentially.

The upper part 221 of the rotating body 22 is in the state where the clamps H1~H4 have clamped the substrate S, and does not come into contact with the intermediate wall 211 separating the regions R1~R4, and rotates at a constant speed with the shaft 42, and follows the region R1→ In the order of R2→R3→R4→R1→R2→..., the boards S are conveyed sequentially. In this way, for each of the substrates S1 to S4, the order of cleaning treatment (region R2)→thin film formation treatment (region R3)→thin film formation treatment (region R4)→cleaning treatment (region R2)→... is repeated. For surface preparation. As an example of the surface treatment of each substrate S1~S4, for example, in the situation shown in FIG. On the other hand, in the area R2, the surface cleaning process is performed on the substrate S4 held by the holder H4. In the area R3, the thin film formation process is performed on the substrate S3 held by the holder H3. In the area R4, The substrate S2 held by the fixture H2 is subjected to thin film formation by bias sputtering.

In this way, the cleaning process and thin film forming process are repeated. After the surface treatment of all the substrates S1~S4 is completed, the constant speed rotation of the rotating body 22 is stopped, and the processed substrate S1 is taken out from the surface treatment machine 1 through the opening O. ~S4. At the same time, the substrate S that has not been subjected to surface treatment is mounted on the empty holders H1 to H4. For example, as shown in FIG. 2 , the surface-treated substrate S1 is removed from the holder H1 in the region R1 , taken out from the surface treatment machine 1 through the opening O, and the unprocessed substrate S5 is loaded on the holder H1 . After the substrate S5 is mounted, the rotating body 22 is rotated only by a predetermined angle (for example, 90°), and then the substrate S2 whose surface treatment has been completed is removed from the jig H2, and after being taken out from the surface treatment machine 1 through the opening O, the untreated The substrate S6 is mounted on the holder H2. The substrates S3 and S4 are also taken out from the surface treatment machine 1 in the same manner, and then the unprocessed substrates S7 and S8 are mounted on the holders H3 and H4 respectively. Then, when the substrates S5~S8 are mounted on the fixtures H1~H4 and the preparation is completed, the rotating body 22 is rotated at a constant speed again, in the order of the regions R1→R2→R3→R4→R1→R2→... The substrate S is conveyed, and each of the substrates S5 to S8 is cleaned in the order of cleaning (region R2)→thin film forming (region R3)→thin film forming (region R4)→cleaning (region R2)→... Surface preparation is repeated.

The surface treatment machine 1 transports the plurality of substrates S to the processing area R in sequence by rotating the upper part 221 of the rotating body 22. In the example of FIG. Always rotate continuously. And, alternatively, it is also possible to turn only a predetermined angle (for example, 90°), and stop without rotating until the processing of each area R1~R4 is completed, and then only rotate a predetermined angle after the processing of each area R1~R4 is completed. stop. Such rotation of the upper part 221 can be realized, for example, by using a stepping motor in the driving device 41 to rotate the shaft 42 . In addition, the rotating body 22 shown in FIG. 2 is equipped with four clamps H, but the number of the clamps H is not particularly limited. According to the area where the clamps H can be arranged on the rotating body 22 and the size of the substrate S to be processed, it can be Set an appropriate value.

Returning to FIG. 1 , power for applying a bias voltage to the substrate S held by the rotor 22 is supplied from a power source 32 via a power supply device 31 . A brush 34 can be used as an electrical connection means (electrical contact) between the power supply device 31 and the power source 32 . The electric brush 34 is connected with the power supply 32 by appropriate means such as wires. The power supply 32 is, for example, in addition to an AC power supply of 50Hz~400MHz, especially an AC power supply having a low frequency (LF) frequency of 30kHz~300kHz or a high frequency (RF) frequency of 10kHz~100MHz, it can also be a direct current power supply (DC), or use those AC power overlap. Also, the waveform of the AC power supply may be any one of sine wave, rectangular wave, sawtooth wave, triangular wave, or a combination of these waveforms. On the other hand, as the brush 34, for example, a metal brush or a carbon brush can be used. Also, a spring may be used instead of the brush 34 . In addition, the power supply device 31 and the brush 34 do not have to be in contact. For example, the power supply device 31 and the brush 34 may be separated by 1 to 2000 μm, and power supply in a non-contact manner may be used.

The power supply device 31 of this embodiment is shown in Figure 1, is installed on the shaft 42, with the rotation of the shaft 42, according to the position of the power supply device 31 in the rotation direction of the rotating body 22, that is, the rotation position of the power supply device 31, can be Selectively switch between power supply and non-power supply. Thereby, in the cleaning process of the substrate S by the plasma generator 11 and the surface treatment by applying a bias voltage to the substrate S by the bias sputtering by the sputtering device 13, only the surface can be treated. A voltage is selectively applied to the processed substrate S, or electric power is selectively supplied only to the holder H holding the substrate S subjected to the surface treatment. As a result, the same surface treatment can be performed on the substrate S with less power than in the case of applying the same bias voltage to the substrate S not subjected to the surface treatment. In addition, besides being installed on the shaft 42, the power supply device 31 of the present invention can also be directly installed on the rotating body 22 as shown in the lower part 222 of the rotating body 22 and the like.

The power supply device 31 has an insulator 311 and a plurality of conductors 312 , the plurality of conductors 312 are insulated from each other by the insulator 311 , and are electrically connected to the fixture H by a plurality of wires 33 . As the insulator 311, it is represented by ceramics, fluororesin, and engineering plastics, and polyethylene, polypropylene, polyvinyl chloride, etc. can be used. The ceramics are alumina, quartz, etc., and the fluororesin is polytetrafluoroethylene (PTFE). etc. The engineering plastic is polyetheretherketone (PEEK) or the like. In addition, by providing an air layer or a vacuum layer between the conductors 312, it is also possible to replace the insulator 311. On the other hand, as the conductor 312, a metal or carbon can be used, and the metal is aluminum, aluminum alloy, copper, copper alloy, gold, silver, platinum, or the like.

FIG. 3 is a plan view of the power supply device 31 . The power supply device 31 shown in FIG. 3 is circular in plan view. As a plurality of conductors 312, there are 4 conductors of conductors 312a~312d. In the counterclockwise direction, 4 conductors are arranged at 4 points equally spaced in the circumferential direction. . The conductors 312 a - 312 d are insulated from each other by the insulator 311 . In addition, the conductors 312a to 312d are electrically connected to the wires 33a to 33d, respectively, whereby electric power is supplied to the jig H, and a voltage can be applied to the substrate S. FIG. Here, the corresponding relationship between the conductor 312 connected by the wire 33 and the fixture H is not particularly limited. For example, in the power supply device 31 of FIG. H1, fixture H2, fixture H3, fixture H4. That is, the conductor 312a is connected to the fixture H1 via the lead 33a, the conductor 312b is connected to the fixture H2 via the lead 33b, the conductor 312c is connected to the fixture H3 via the lead 33c, and the conductor 312d is connected to the fixture H4 via the lead 33d. The number of 312 is equal to the number of multiple clamps H, and these conductors are connected to the clamps in a one-to-one manner. Alternatively, the number of conductors 312 may be smaller than the number of holders H, and two or more holders H may be connected to one conductor 312 . In addition, the number of conductors 312 is not particularly limited, and an appropriate number can be set relative to the number of fixtures H. Moreover, the shapes of the insulator 311 and the conductors 312 are not limited to the shapes shown in FIG. 3 , and circular shapes can be used. , rectangle, etc. the appropriate shape.

In the surface treatment machine 1 of the present embodiment, the number and arrangement of the brushes 34 are not particularly limited, and may be appropriately arranged in accordance with the surface treatment performed in the surface treatment machine 1 . In the surface treatment machine 1 of the first embodiment, two brushes are used to connect the power supply device 31 and the power supply 32. The two brushes are in the plan view shown in FIG. The brushes 34b. The brushes 34a and 34b shown in Figure 3 are all connected to the power supply 32, but in the case of using a plurality of brushes 34, it is not necessary to connect all the brushes 34 to the same power supply 32, and each brush 34 can be connected to a different power supply. Some brushes 34 may be connected to a power source 32 different from other brushes 34 . By connecting each brush 34 to a power source having a different configuration of voltage, power, frequency, etc., the voltage, power, and/or frequency can be controlled by processing each surface.

The power supply device 31 of this embodiment is attached to the shaft 42, and when the shaft 42 rotates in the direction of the arrow D around the point C, it rotates in the direction of the arrow D together with the shaft 42. When the power supply device 31 rotates, the wire 33 connected to the conductor 312 also rotates together. In contrast, the power supply 32 and the brush 34 are separated from the shaft 42 and their positions are fixed, so they do not rotate together with the power supply device 31 . Therefore, as the power supply device 31 rotates in the direction of the arrow D, the brush 34a is in the order of conductor 312a→insulator 311→conductor 312b→insulator 311→conductor 312c→insulator 311→conductor 312d→insulator 311→conductor 312a→insulator 311→ The sequence of the conductors 312b . . . is in alternate contact with the insulator 311 and the plurality of conductors 312 . Similarly, the brush 34b is connected with the insulator 311 and the The plurality of conductors 312 are sequentially contacted.

In this way, according to the rotational position of the shaft 42 in the rotational direction, the conductors 312 in contact with the brushes 34a and 34b are switched, whereby the power supply device 31 can switch the clamp H for power supply, and then switch the substrate S for applying voltage. In the case of the power supply device 31 shown in FIG. 3 , in view of the corresponding relationship between the conductor 312 and the clamp H, as the power supply device 31 rotates in the direction of the arrow D, according to clamps H1 and H3 → clamps H2 and H4 → clamps H1 and The sequence of H3→fixture H2 and H4→fixture H1 and H3→..., the power supply fixture H is switched. Also, the plurality of conductors 312 are insulated from each other by the insulator 311, whereby, for example, between the connection between the conductor 312a and the brush 34a, other conductors 312b~312d will not be connected to the brush 34a, and can only be connected to the power supply. 32 connect the fixture H and the substrate S to supply power. Furthermore, since the brushes 34 a and 34 b are in contact with the insulator 311 before they are in contact with the conductor 312 , the jig H is not in a power supply state due to unnecessary connection to the power source 32 . In addition, in the power supply device shown in FIG. 3, the outer peripheral portion of the insulator 311 is in contact with the brushes 34a and 34b, but it may also be made such that the outer peripheral portions of the conductors 312a-312d extend in the radial direction, or the outer peripheral portion of the insulator 311 By being concave in the radial direction, the outer peripheral portion of the insulator 311 does not come into contact with the brushes 34a and 34b. In this case, the air layer provided between each of the conductors 312a to 312d becomes an insulator.

Here, when cleaning is carried out in the region R2 shown in FIG. 2, and bias sputtering is carried out in the region R4, for example, as long as the position of the jig H1 in FIG. 2 and the conductor 312a in FIG. The fixture H3 of 2 corresponds to the position of the conductor 312c in FIG. 3 in the direction of rotation D. Between cleaning the substrate S1 and performing bias sputtering on the substrate S3, the substrates S1 and S3 can be selectively applied. Voltage. Furthermore, since the conductors 312a to 312d are mutually insulated by the insulator 311, they are selected in the pair of substrates S1 and S3. No voltage is applied to the substrates S2 and S4 when the voltage is permanently applied. That is, in the rotation direction D, as long as the position where the substrate S1 is cleaned, the position of the jig H1 holding the substrate S1, and the position where the conductor 312a connected to the jig H1 contacts the brush 34a correspond, by using this The power supply device 31 of the embodiment can selectively apply a voltage to the substrate S1 to be cleaned. Also, in the rotation direction D, as long as the position where the substrate S3 is cleaned, the position of the jig H3 holding the substrate S3, and the position where the conductor 312c connected to the jig H3 contacts the brush 34b correspond, by using this The power supply device 31 of the embodiment can selectively apply a voltage to the substrate S3 subjected to the thin film formation process by bias sputtering. This is also the same for the conductor 312b and the holder H2, and the conductor 312d and the holder H4.

In the surface treatment machine 1 of this embodiment, by adjusting the rotation speed of the shaft 42 and the length L1 of the conductor 312 of the power supply device 31 at the outer periphery, the time to supply power to the jig H can be controlled. In the case of the power supply device 31 of FIG. 3 , when the total circumference of the power supply device 31 at the outer periphery is regarded as L, and the end A of the conductor 312a at the outer periphery is regarded as the starting point of the rotation position, the distance from the end A is Between the rotation position 0~L, adjust the position of L1a~L1d (that is, the length L1a~L1d in the outer periphery), and the time to supply power to the fixture H can be controlled. Also, instead, in the surface treatment machine 1 of this embodiment, by adjusting the rotation speed of the shaft 42 and the angle θ1 of the rotating body 22 in the direction of rotation D, the time for supplying power to the fixture H can be controlled. The angle θ1 is Both ends of the conductor 312 on the outer periphery are formed with the rotation center C of the rotor 22 . If it is the power supply device 31 of FIG. 3 , when the end A of the conductor 312a on the outer periphery is taken as the starting point of the rotation position, the rotation angle from the end A is between 0°~360°, by adjusting the rotation body 22 The angles θ1a~θ1d in the rotation direction D can control the power supply time to the fixture H. The angles θ1a~θ1d are formed by the two ends of the conductors 312a~312d on the outer periphery and the rotation center C of the rotating body 22. For example, in the case of cleaning the substrate S1 held by the fixture H1, using the set rotation speed of the shaft 42 and the time required for the cleaning process, the distance between the power supply time to the fixture H1 and the substrate S1 can be used. The length L1a or angle θ1a of the conductor 312a at the outer peripheral portion is set so that the time required for the cleaning process becomes equal. This is also the same for the lengths L1b-L1d and angles θ1b-θ1d of the outer peripheral portions of the other conductors 312b-312d, and the film formation process by bias sputtering.

Furthermore, in the power supply device 31 shown in FIG. 3, the lengths L1a, L1b, L1c, and L1d of the conductor 312 at the outer peripheral portion are equal, but these lengths may also be different from each other, depending on the surface treatment machine 1. The steps of surface treatment, especially the number of steps and the required time, can be set to an appropriate length for each conductor 312 . Similarly, the angles θ1a, θ1b, θ1c, and θ1d of the rotating body 22 in the rotating direction D are equal, and the angles θ1a, θ1b, θ1c, and θ1d are between the two ends of the conductors 312a-312d on the outer peripheral portions and the rotating body 22. The center of rotation C is formed, but these angles can also be different from each other. In response to the steps of surface treatment carried out in the surface treatment machine 1, especially the number of steps and the time required, appropriate values can be set for each conductor 312. angle. That is, the lengths L1a to L1d and the angles θ1a to θ1d may be different from each other, as long as the plurality of conductors 312 are arranged in a dispersed manner on the outer periphery of the power supply device 31 via the insulator 311 along the rotation direction D of the rotor 22 . Thereby, in each step of the surface treatment, the time for applying the bias voltage can be controlled.

Also, for the insulator 311, the length L2a between the conductors 312a and 312b at the outer periphery and the length L2a between the conductors 312b and 312c at the outer periphery can be appropriately set in accordance with the surface treatment steps carried out in the surface treatment machine 1. The length L2b between the conductors 312c and 312d at the outer periphery, and the length L2d between the conductors 312d and 312a at the outer periphery. Similarly, the angle θ2a of the rotating body 22 in the rotating direction D, the angle θ2b of the rotating body 22 in the rotating direction D, and the angle θ2b of the rotating body 22 can be appropriately set in response to the surface treatment steps carried out in the surface treatment machine 1. The angle θ2c in the rotation direction D and the angle θ2d of the rotation body 22 in the rotation direction D, the angle θ2a is formed between the two ends of the outer peripheral portion between the conductors 312a and 312b and the rotation center C of the rotation body 22, the angle θ2b is formed between the two ends of the outer circumference between the conductors 312b and 312c and the rotation center C of the rotating body 22, and the angle θ2c is formed between the two ends of the outer circumference of the conductors 312c and 312d and the rotation center of the rotating body 22 C, the angle θ2d is formed between the two ends of the outer peripheral portion between the bodies 312d and 312a and the rotation center C of the rotating body 22 . In the power supply device 31 shown in FIG. 3 , the lengths L2a, L2b, L2c, and L2d are equal, but the lengths L2a˜L2d may be different from each other. Similarly, the angles θ2a, θ2b, θ2c, and θ2d are equal, but the angles θ2a˜θ2d may be different from each other.

In addition, when setting the length L1 of the plurality of conductors 312 on the outer periphery and the length L2 of the insulator 311 on the outer periphery, the length L3a of the portion where the power supply device 31 contacts the brush 34a, and the length L3a of the power supply device 31 and the brush 34a are considered. The length L3b of the part contacted by the brush 34b. Similarly, when setting the angle θ1 and the angle θ2, the angle θ3a of the rotating body 22 in the direction of rotation D and the angle θ3b of the rotating body 22 in the direction of rotation D are considered. The contact part and the rotation center C of the rotor 22 are formed, and the angle θ3b is formed by the contact part of the power supply device 31 and the brush 34b and the rotation center C of the rotor 22 .

The wire 33 connecting the conductor 312 of the power supply device 31 and the fixture H can also be arranged on the outside of the rotating body 22, but in order to shorten the length of the wire 33, it is possible to suppress the surface treatment of the wire 33 by using plasma or the like. Therefore, it is preferable to dispose at least a part of the wire 33 inside the rotating body 22 . An example of the arrangement of the lead wires 33 in the rotor 22 will be described using FIG. 4 .

FIG. 4 is a cross-sectional view of the lower portion 222 of the rotor 22 along line AA (refer to FIG. 1 ). In the surface treatment machine 1 shown in FIG. 1, as shown in FIG. 4, the wires 33a~33d are arranged parallel to the rotation axis of the shaft 42, that is, they are arranged perpendicular to the A-A line. When the wires 33a~33d are connected to the power supply device 31 and the shaft 42 rotate together, they rotate in the direction of the arrow D with the point C as the rotation center. Here, when a plurality of wires are connected to each other in the rotating body 22, since it is not possible to selectively supply power only to the holder H holding the substrate to be surface-treated, an insulator 35 is provided between the wires 33a to 33d and the rotating body 22. . As this insulator 35, the same material as that of the insulator 311 can be used. That is, ceramics, fluororesins, and resins such as polyethylene, polypropylene, and polyvinyl chloride. In addition, by providing an air layer and a vacuum layer between the plurality of wires 33 and the interior of the rotating body 22, the wires 33 can also be insulated from each other.

Next, the procedure of surface treatment of the substrate S in the surface treatment machine 1 will be described with reference to FIGS. 5A to 5E . 5A to 5E are plan views showing the steps of surface treatment of the substrate S using the surface treatment machine 1 shown in FIG. 1 . (A) of FIGS. 5A to 5E is the same as FIG. 2 , and is a plan view of the surface treatment machine 1 shown in FIG. 1 , showing the processing of the substrate S in each step. However, in (A) of FIGS. 5A to 5E , the illustration of the frame body 21 is omitted for the sake of explanation. On the other hand, (B) of FIGS. 5A to 5E is a plan view of the power supply device 31 and the brush 34 in the processing step of the substrate S shown in (A).

FIG. 5A shows the initial state of the surface treatment step on the substrate S. As shown in FIG. That is, as shown in FIG. 5A(A), substrates S1 to S4 are respectively mounted on the jigs H1 to H4, the substrate S1 is located in the region R1, the substrate S2 is located in the region R4, the substrate S3 is located in the region R3, and the substrate S4 is located in the region R3. Region R2. Hereinafter, when the upper part 221 of the rotating body 22 starts to rotate at a constant speed in the clockwise direction, how the substrate S1 held by the holder H1 is subjected to surface treatment will be described.

In FIG. 5A , the power supply device 31 is located in the configuration shown in FIG. 5A(B), and the conductor 312a conducting with the clamp H1 is not in contact with the brushes 34a and 34b. Therefore, since no bias power is supplied to the jig H1, the plasma surface treatment is not performed on the substrate S1 located in the region R1.

FIG. 5B shows the first step of the surface treatment of the substrate S1. From the state shown in FIG. 5A , the rotating body 22 rotates clockwise by only an angle α1 to the center of rotation C. As shown in FIG. The power supply device 31 is arranged as shown in FIG. 5B(B). As a result, the brush 34a is connected to the conductor 312a, and electric power is supplied to the holder H1 through the wire 33a. Thereby, a bias voltage is applied to the substrate S1 held by the holder H1, and bias etching using the plasma generator 11 is performed.

FIG. 5C shows the second step of the surface treatment of the substrate S1. From the state shown in FIG. 5B , the rotating body 22 rotates clockwise by an angle α2 to the center of rotation C. As shown in FIG. The power supply device 31 is arranged as shown in FIG. 5C(B). As a result, since the conductor 312a conducting with the holder H1 is not in contact with the brushes 34a and 34b, power is not supplied to the holder H1. Therefore, the thin film formation process using the sputtering apparatus 12 is performed without applying a voltage to the board|substrate S1 conveyed to the area|region R3, and in the state which did not apply the bias voltage.

FIG. 5D shows the third step of the surface treatment of the substrate S1. From the state shown in FIG. 5C , the rotator 22 rotates only an angle α3 in the clockwise direction to the center of rotation C. As shown in FIG. The power supply device 31 is arranged as shown in FIG. 5D(B). As a result, the brush 34b is connected to the conductor 312a, and electric power is supplied to the holder H1 through the wire 33a. Thereby, a bias voltage is applied to the substrate S1 clamped by the holder H1, and the substrate S1 is subjected to thin film formation processing by bias sputtering using the sputtering device 13 .

FIG. 5E shows the fourth step of the surface treatment of the substrate S1. From the state shown in FIG. 5D , the rotating body 22 only rotates an angle α4 in the clockwise direction to the center of rotation C. As shown in FIG. The configuration of the power supply device 31 is returned to the initial state shown in FIG. 5A. The surface treatment of the substrate S is carried out through the first step and the fourth step described above to form a cycle, and the cycle is repeated in the surface treatment machine 1 until the surface treatment of each substrate S1-S4 is completed.

In this way, by using the power supply device 31 of this embodiment, in the case where a voltage needs to be applied to the substrate S for surface treatment, that is, only when the substrate S is located in the region R2 or R4, the jig H holding the substrate S is selected. While power is supplied selectively, voltage can be selectively applied to the substrate S. On the other hand, when it is not necessary to apply a voltage to the substrate S for surface treatment, that is, when the substrate S is located in the region R1 or R3, the power supply device 31 of this embodiment can selectively disable the clamp H holding the substrate S. powered by. As a result, the same effect of surface treatment on the substrate S can be obtained with a relatively small amount of power compared to the case of uniformly supplying power to all the holders H1 to H4. [Second Embodiment]

Fig. 6 is a front view showing a second embodiment of the surface treatment machine 1 including the power supply device 31 of the present invention. Different from the surface treatment machine 1 of the first embodiment, the surface treatment machine 1 of the second embodiment is that the upper part 221 of the rotating body 22 is not a rotating drum, but a flat plate, and the clamp H is arranged on the upper part of the rotating body 22 . The jig H of FIG. 6 is a concave portion, and the substrate S can be placed on the concave portion. However, the clamp H is not limited to a concave portion. For example, at least one pin may be provided on the upper part of the rotating body 22, and the substrate S may be supported by the pin. At least one splint or the like is used to hold the substrate S.

Also, in the surface treatment machine 1 of the first embodiment, the plasma generator 11 and the sputtering devices 12, 13 are arranged on the side of the frame 21, while in the surface treatment machine 1 of the second embodiment, the plasma generator The device 11 and the sputtering devices 12 and 13 are arranged on the upper surface of the housing 21 . The partition wall 211 extends from each device in the vertical direction so that the cleaning process using the plasma generating device 11 and the thin film forming process using the sputtering devices 12 and 13 do not affect the processing of other devices. Here, in the first embodiment, the thin film forming process by the sputtering device 13 is a bias sputtering method, while in the second embodiment, the thin film forming process by the sputtering device 13 is performed without applying a bias to the substrate S. Voltage.

Moreover, the connection between the power supply device 31 and the power source 32 is only one point of the contact point P. As shown in FIG. The electrical connection between the power supply device 31 at the contact point P and the power source 32 uses a non-contact power supply method. The non-contact power supply method is not particularly limited, and an appropriate method that can apply a voltage required for surface treatment such as cleaning treatment or thin film formation treatment to the substrate S can be used. By non-contact power supply, the generation of abrasion powder caused by the contact between the power supply device 31 and the brush 34 can be suppressed. Furthermore, in the surface treatment machine 1 of the first embodiment, the rotating body 22 is indirectly attached to the driving device 41 via the shaft 42, but in the surface treatment machine 1 of the second embodiment, the tie shaft 42 does not exist, and the shaft 42 is used instead. The shaft-shaped shaft portion 223 further suspended from the lower portion 222 of the rotor 22 directly attaches the rotor 22 to the driving device 41 .

FIG. 7 is a plan view of the surface treatment machine 1 shown in FIG. 6 . As shown in FIG. 7 , the upper part 221 of the rotating body 22 is circular in plan view, and has eight holders H1 to H8 in the counterclockwise direction. The plasma generating device 11 and the sputtering devices 12, 13 used in the surface treatment of the substrate S are shown by dotted lines in FIG. The substrate S included in the dotted frame 12 or frame 13 is subjected to a thin film forming process. For example, in FIG. 7, when the substrates S1~S8 are clamped by the respective holders H1~H8, a bias voltage is applied to the substrate S8 contained in the dotted line frame 11 through the holder H8, and injected into the plasma generating device 11 The generated plasma particles clean the surface of the substrate S8. Further, the substrate S6 included in the dotted frame 12 and the substrate S4 included in the dotted frame 13 are respectively subjected to thin film formation processing by the sputtering apparatuses 12 and 13 .

In the surface treatment machine 1 of the second embodiment, by making the rotating body 22 rotate in the direction of the arrow D (that is, clockwise) around the point C, the plurality of substrates S1~S8 are processed according to the substrate S1→S2 In the order of →S3→S4→S5→S6→S7→S8, cleaning treatment and thin film formation treatment are performed sequentially. The rotation of the rotating body 22 uses a driving device 41 (shown in FIG. 6 ). The substrate S on which the thin film forming process has been completed is taken out from the opening O (ends E1 and E2 are shown in FIG. 2 ) provided on the side wall surface of the frame body 21 . Then, on the empty jig H, instead of the substrate S whose surface treatment has been completed, the substrate S that has not yet been surface-treated is placed. In this manner, the surface treatment of the substrate S can be continuously performed. In addition, the frame body 21 communicates with equipment capable of maintaining the airtightness of an unillustrated load-in/load-out chamber and the like through the opening O, whereby the frame body 21 is also maintained when the substrate S is taken out from the frame body 21 . Inner vacuum environment.

FIG. 8 is a plan view of the power supply device 31 shown in FIG. 6 . The power supply device 31 shown in FIG. 6 is circular in plan view. As a plurality of conductors 312, there are 8 conductors 312a~312h. In the counterclockwise direction, 8 conductors are arranged at 8 points at equal intervals in the circumferential direction. . The conductors 312 a - 312 h are insulated from each other by the insulator 311 . In addition, the conductors 312a to 312h are respectively electrically connected to the wires 33a to 33h, thereby supplying electric power to the jig H and applying a bias voltage to the substrate S. FIG. In the power supply device 31 of FIG. 8 , the conductor 312a is connected to the fixture H1 through the wire 33a, the conductor 312b is connected to the fixture H2 through the wire 33b, the conductor 312c is connected to the fixture H3 through the wire 33c, and the conductor 312d is connected to the fixture H4 through the wire 33d. To connect, conductor 312e is connected to fixture H5 via wire 33e, conductor 312f is connected to fixture H6 via wire 33f, conductor 312g is connected to fixture H7 via wire 33g, conductor 312h is connected to fixture H8 via wire 33h, and multiple conductors 312 The number of conductors is equal to the number of multiple fixtures H, and these conductors are connected to the fixtures in a one-to-one manner. In addition, the number of clamps H and the number of conductors 312 may also be different, and a plurality of clamps H may be connected to one conductor 312 . Also, some of the jigs H may not be connected to the conductor 312 . In this case, no voltage is applied to the substrate S held by the jig H not connected to the conductor 312 .

The power supply device 31 is attached to the shaft portion 223 of the rotating body 22, and when the rotating body 22 rotates in the direction of the arrow D around the point C, it rotates together with the rotating body 22. When the power supply device 31 rotates, the wire 33 connected to the conductor 312 also rotates together. In contrast, the power source 32 and the contact point P are separated from the rotating body 22 and will not rotate together with the power supply device 31 . Therefore, as the power supply device 31 rotates in the direction of the arrow D, the contact point P is in accordance with conductor 312a→insulator 311→conductor 312b→insulator 311→conductor 312c→insulator 311→conductor 312d→insulator 311→conductor 312e→insulator 311→ Conductor 312f → insulator 311 → conductor 312g → insulator 311 → conductor 312h → insulator 311 → conductor 312a → insulator 311 → conductor 312b → .

In this manner, by simultaneously switching the rotational position of the conductor 312 in contact with the contact point P and the rotational position of the power supply device 31 in the rotational direction of the rotating body 22, the power supply device 31 can switch the clamp H for power supply, and then switch the position of applying the bias voltage. Substrate S. In the case of the power supply device 31 shown in Figure 8, in view of the corresponding relationship between the conductor 312 and the clamp H, as the power supply device 31 rotates in the direction of the arrow D, according to the clamp H1→H2→H3→H4→H5→H6→ In the order of H7→H8→H1→H2→…, the power supply fixture H is switched. Also, the plurality of conductors 312 are insulated from each other by the insulator 311, whereby, for example, between the conductor 312a and the power supply 32 via the contact point P, the other conductors 312b~312h will not be connected to the power supply 32, and can only be connected to the power supply 32. The jig H and the substrate S connected to the power supply 32 are powered. Furthermore, since the contact point P is in contact with the insulator 311 before it is in contact with the conductor 312 , the jig H is not in a power supply state due to unnecessary connection to the power source 32 .

Here, as described above, when cleaning the substrate S contained in the dotted line frame 11 shown in FIG. The position of the conductor 312a shown in the rotation direction D corresponds to that a bias voltage can be applied to the substrate S1 before cleaning the substrate S1. Furthermore, since the conductors 312 a to 312 h are mutually insulated by the insulator 311 , no voltage is applied to the other substrates S2 to S8 while the bias voltage is applied to the substrate S1 . That is, in the rotation direction D, as long as the position where the substrate S1 is cleaned, the position of the jig H1 holding the substrate S1, and the position where the conductor 312a connected to the jig H1 is in contact with the contact point P correspond, by using this The power supply device 31 of the embodiment can selectively apply a voltage to the substrate S1 to be cleaned. This is also the same for the other conductors 312b to 312h and the jigs H2 to H8.

Also, like the power supply device 31 of the first embodiment, in the surface treatment machine 1 of the second embodiment, by adjusting the rotational speed of the rotating body 22 and the length L1 of the conductor 312 of the power supply device 31 at the outer periphery, it can Control the timing of power supply to fixture H. In the case of the power supply device 31 of FIG. 8 , when the total circumference of the power supply device 31 at the outer periphery is regarded as L, and the end A of the conductor 312a at the outer periphery is regarded as the starting point of the rotation position, the distance from the end A is Between the rotation positions 0~L, by adjusting the positions of L1a~L1h (that is, the lengths L1a~L1h at the outer circumference), the time to supply power to the fixture H can be controlled. Also, instead, in the power supply device 31 of the second embodiment, by adjusting the rotational speed and the angle θ1 of the rotating body 22, the timing for supplying power to the jig H can be controlled. If it is the power supply device 31 of FIG. 8 , when the end A of the conductor 312a on the outer periphery is taken as the starting point of the rotation position, the rotation angle from the end A is between 0°~360°, by adjusting the rotation body 22 The angles θ1a~θ1h in the rotation direction D can control the power supply time to the fixture H. The angles θ1a~θ1h are formed by the two ends of the conductors 312a~312h on the outer circumference and the rotation center C of the rotating body 22. For example, in the case of cleaning the substrate S1 held by the fixture H1, using the set rotation speed of the rotating body 22 and the time required for the cleaning process, the time required for power supply to the fixture H1 and the time required for the substrate S1 can be compared. The length L1a or angle θ1a of the conductor 312a at the outer peripheral portion is set so that the time required for the cleaning process becomes equal. Furthermore, as with the power supply device 31 of the first embodiment, the length L1a of the conductor 312 at the outer periphery can be adjusted according to the steps of surface treatment carried out in the surface treatment machine 1, especially the number of steps and the required time. ~L1h and angles θ1a~θ1h, and lengths L2a~L2h and angles θ2a~θ2h of the insulator 311 on the outer periphery are set to appropriate lengths and angles.

[Embodiment of the present invention]

As described above, according to the power supply device 31 of this embodiment, when the surface treatment machine 1 performs surface treatment on a plurality of substrates S sequentially, it is directly or indirectly installed on the rotating body 22 that supplies power to the substrate S, and The power supplied from the power source 32 is supplied to the substrate S held by the rotating body 22 , and power supply and non-power supply can be selectively switched according to the rotational position of the rotating body 22 in the rotational direction. Thereby, when a voltage is applied to the substrate S and the surface treatment is performed, electric power can be selectively supplied only to the substrate S on which the surface treatment is performed. As a result, the same surface treatment can be performed with less power than when the same power is supplied to both the substrate S not subjected to surface treatment and the substrate S subjected to surface treatment in a state where no voltage is applied.

Moreover, according to the power supply device 31 of this embodiment, power can be supplied from the power supply 32 to the rotating body 22 by non-contact power supply. This eliminates the need to provide wiring for power supply in the surface treatment machine 1 . Furthermore, generation of abrasion powder (dust) generated by contact between the power supply device 31 and the brush 34 can be suppressed, and the device can be held cleanly.

Also, if the power supply device 31 according to this embodiment includes an insulator 311 and a plurality of conductors 312, the plurality of conductors 312 are arranged in a dispersed manner along the rotation direction of the rotor 22, and can be connected to the power supply 32 in a predetermined rotation position. connect. Thereby, along with the rotation of the rotating body 22 or the shaft 42, electric power can be selectively supplied only to the substrate S to which a voltage is to be applied. In addition, by insulating the plurality of conductors 312 from each other with the insulator 311 , it is also possible to change the type of the power source 32 connected to each conductor 312 .

Also, if according to the power supply device 31 of the present embodiment, on the plan view, the shape of the power supply device 31 is circular, and a plurality of conductors 312 are connected to the power supply 32 at the outer periphery, and the angle of the rotating body in the direction of rotation can be made to be opposite to the substrate. The time of surface treatment and the time of power supply to the substrate form an equal angle formed between both ends of the outer peripheral portion and the center of rotation of the rotating body. Thereby, unnecessary electric power supply to the board|substrate S can be avoided.

Also, according to the power supply device 31 of this embodiment, the plurality of conductors 312 can be connected to the plurality of power sources 32 in sequence. By using a power source 32 with a different voltage, power, and/or frequency for each surface treatment, it is possible to control the bias voltage and/or supply power for each surface treatment.

Also, if the surface treatment machine 1 using the power supply device 31 of this embodiment is equipped with a frame body 21 for holding at least a part of the rotating body 22 in a vacuum environment, the rotating body 22 has a plurality of clamps H, which are used to The substrate S is clamped and a voltage is applied, and a plurality of wires 33 connecting the plurality of holders H and the plurality of conductors 312 may be provided. Thereby, the surface treatment can be performed on the substrate S held by the holder H of the rotating body 22 in a vacuum environment.

Also, according to the surface treatment machine 1 using the power supply device 31 of this embodiment, the number of conductors 312 is equal to the number of the plurality of holders H, and the conductors 312 and holders H are connected in a one-to-one manner. Thereby, along with the rotation of the rotating body 22 or the shaft 42, electric power can be selectively supplied only to the substrate S to which a voltage is to be applied.

1: Surface treatment machine 11: Plasma generating device 12,13: Sputtering device 121,131: Sputtering target 122,132: support plate 21: frame 211: partition wall 22: Rotating body 221: upper part 222: lower part 223: Shaft 23: sealed 31: Power supply device 311: insulator 312, 312a, 312b, 312c, 312d, 312e, 312f, 312g, 312h: Conductor 32: power supply 33, 33a, 33b, 33c, 33d, 33e, 33f, 33g, 33h: Wire 34, 34a, 34b: brushes 35: Insulator 41: Drive device 42: axis 43: fixed part A: The starting point of the rotation position C: center of rotation D: direction of rotation E1, E2: end H, H1, H2, H3, H4, H5, H6, H7, H8: fixture L1, L1a, L1b, L1c, L1d, L1e, L1f, L1g, L1h: the length of the conductor at the outer circumference L2a, L2b, L2c, L2d, L2e, L2f, L2g, L2h: the length of the insulator at the outer periphery O: opening P: Contact R1: Region 1 R2: Region 2 R3: Region 3 R4: Region 4 S, S1, S2, S3, S4, S5, S6, S7, S8: substrate α1, α2, α3, α4: rotation angle θ1a, θ1b, θ1c, θ1d, θ1e, θ1f, θ1g, θ1h: angles (conductor) θ2a, θ2b, θ2c, θ2d, θ2e, θ2f, θ2g, θ2h: angles (insulator) θ3a, θ3b: Angle (Brush)

Fig. 1 is a front view showing a first embodiment of a surface treatment machine including a power supply device according to the present invention. Fig. 2 is a plan view of the surface treatment machine shown in Fig. 1 . Fig. 3 is a plan view of the power supply device shown in Fig. 1 . Fig. 4 is a sectional view of the rotating body shown in Fig. 1 along line A-A. FIG. 5A is a plan view (Part 1 ) showing a step of surface treatment of a substrate using the surface treatment machine of FIG. 1 . FIG. 5B is a plan view (part 2 ) showing a step of surface treatment of a substrate using the surface treatment machine of FIG. 1 . FIG. 5C is a plan view (part 3 ) showing a step of surface treatment of a substrate using the surface treatment machine of FIG. 1 . FIG. 5D is a plan view (Part 4 ) showing a step of surface treatment of a substrate using the surface treatment machine of FIG. 1 . FIG. 5E is a plan view (5) showing a step of surface treatment of a substrate using the surface treatment machine of FIG. 1 . Fig. 6 is a front view showing a second embodiment of a surface treatment machine including a power supply device according to the present invention. Fig. 7 is a plan view of the surface treatment machine shown in Fig. 6 . Fig. 8 is a plan view of the power supply device shown in Fig. 6 .

1: Surface treatment machine

11: Plasma generating device

12,13: Sputtering device

21: frame

22: Rotating body

221: upper part

222: lower part

23: sealed

31: Power supply device

311: insulator

312: Conductor

32: power supply

33: wire

34: Brush

41: Drive device

42: axis

43: fixed part

H: fixture

S: Substrate

Claims (8)

A power supply device for a surface treatment machine is a power supply device used in a surface treatment machine that sequentially performs surface treatment on a plurality of substrates. It is directly or indirectly installed on a rotating body that supplies power to the substrate, and supplies The substrate held by the rotator is supplied with power supplied from a power source; according to the rotational position of the rotator in the direction of rotation, selectively switching between power supply and non-power supply; the surface treatment system includes a device for supplying power to the substrate A plurality of areas, and one or a plurality of areas where the electric power is not supplied to the substrate; corresponding to the rotational position, for the plurality of the substrates that are subjected to the surface treatment in the area where the electric power is supplied to the substrate, simultaneously and selected In a plurality of regions where the power is supplied to the substrate, the surface treatment is performed simultaneously on the substrate to which the power is supplied; different surface treatments are performed in each region where the power is supplied to the substrate. The power supply device for a surface treatment machine according to claim 1, wherein the electric power is supplied from the power supply to the rotating body by non-contact power supply. The power supply device for a surface treatment machine as claimed in claim 1 or 2, which includes an insulator and a plurality of conductors; the plurality of conductors are arranged between the insulators and distributed along the rotation direction of the rotating body, and at a predetermined The rotating position of the power supply is connected in sequence. The power supply device for a surface treatment machine as claimed in claim 3, wherein the power supply device is circular in plan view; a plurality of the conductors are connected to the power supply at the outer periphery; The angle of the rotating body in the rotating direction is an angle equal to the time when the surface treatment is performed on the substrate and the time when the electric power is supplied to the substrate. The angle is between the two ends of the outer peripheral portion and the rotating body formed by the center of rotation. The power supply device for a surface treatment machine according to claim 3, wherein the plurality of conductors are sequentially connected to the plurality of power sources. The power supply device for a surface treatment machine according to claim 4, wherein the plurality of conductors are sequentially connected to the plurality of power sources. A surface treatment machine, which includes: a power supply device according to any one of claims 3 to 6; a frame, which holds at least a part of the rotating body in a vacuum environment; a plurality of clamps, which hold the substrate, and for The power supply is provided on the rotating body; and a plurality of wires are connected to the plurality of the clamps and the plurality of the conductors. The surface treatment machine according to claim 7, wherein the number of the conductors is equal to the number of the clamps, and the conductors are connected to the clamps in a one-to-one manner.

Images