CN101469412A - Thin film deposition device and method thereof - Google Patents
Thin film deposition device and method thereof Download PDFInfo
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- CN101469412A CN101469412A CNA2008101844420A CN200810184442A CN101469412A CN 101469412 A CN101469412 A CN 101469412A CN A2008101844420 A CNA2008101844420 A CN A2008101844420A CN 200810184442 A CN200810184442 A CN 200810184442A CN 101469412 A CN101469412 A CN 101469412A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
Abstract
The present invention provides a film deposition device and a method thereof. The film deposition device comprises the following components: a reacting chamber, a base which is rotatablely installed in the reacting chamber and is installed with at least one substrate, a gas supplying unit which is installed on the upper part of reacting chamber for respectively providing a plurality of gases to the reacting chamber, a separation exhaust unit which is installed on the base corresponding with the boundary of each area of the plurality of gases and is provided with exhaust lines for discharging the ambient gas, and a vacuum air suction unit which provides suction force to the separation exhaust unit. The film deposition device can separate and discharge the source gas and reacting gas. Furthermore the quality of film can be increased through reducing the generation of impurities of particles, etc.
Description
Technical field
The invention provides a kind of film deposition apparatus and its deposition method, more particularly, provide a kind of and be used for preventing source gas and reactant gases intermingling film deposition apparatus and its deposition method can improve the depositing of thin film quality by source gas being separated with reactant gases discharge.
Background technology
Film for deposition pre-determined thickness on the substrate of semiconductor wafer or glass etc., the general membrane deposition method that uses, for example utilize physics conflict for example sputter (sputtering) physical gas-phase deposite method (PVD:Physical Vapor Deposition) and utilize the chemical gaseous phase depositing process (CVD:Chemical Vapor Deposition) of chemical reaction.
Chemical gaseous phase depositing process contains aumospheric pressure cvd method (APCVD:AtmosphericPressure CVD), low-pressure chemical vapor deposition method (LPCVD:Low Pressure CVD), plasma enhanced chemical vapor deposition method (Plasma Enhanced CVD), wherein above-mentioned plasma enhanced chemical vapor deposition method is the most frequently used, because it has and can deposit at low temperatures and film forms fireballing advantage.
Yet,, need have the film of fine pattern and film and form regional ladder and also increase along with the appearance design of semiconductor device regulation (Design Rule) significantly reduces.Thereby not only the fine pattern of the film of atomic shell unit can be formed evenly also have simultaneously excellent step spreadability (stepcoverage) Atomic layer deposition method (ALD:atomic layer deposition) be employed and develop.Be to be utilized in the thin film deposition processes of its gate oxidation films, electric capacity electricity Jie's film and nonproliferation film etc. in the semi-conductor manufacturing engineering.
The ALD method is similar to general chemical gaseous phase depositing process from the aspect that utilizes the chemical reaction between the gas molecule.The general chemistry CVD (Chemical Vapor Deposition) method is deposited on the wafer by the resultant of reaction that a plurality of gas molecules is injected into simultaneously reaction chamber and will occurs in wafer top, and Atomic layer deposition method only is created on chemical reaction product on the above-mentioned wafer by a kind of gas being injected into reaction chamber after (purge) and injecting other gas aggradation after the wafer top of heating staying physical adsorption.
Because the step coverage of the film of realizing by Atomic layer deposition method is good, especially it can form the very low pure film of impurity content, so the ALD method is popular.
Yet, spray different reactant gases and sweeping gas because the injector high speed rotating of the supply gas of existing film deposition apparatus, intermingling makes the concentration of reactant gases thin out and can cause unnecessary reaction to worsen the deposition quality of substrate between the reactant gases.
In order to prevent the interreaction between the reactant gases, carrying around reaction chamber of having forms a plurality of venting holes, but its method can not be blocked the mixing of differential responses inter gas.
In addition, in order to prevent that intermingling between the reactant gases from can also form a plurality of separate chambers and different reactant gasess and sweeping gas are provided in each separate chamber in reaction chamber, but its method can cause the long structure that makes production efficiency step-down and reaction chamber of engineering time problem such as complicate, because it need be deposited on reactant gases and sweeping gas on the substrate according to priority.
In addition, the formed particle of the reaction between the different reactant gasess can cause the deposition quality of substrate to descend, and can not remove its particle effectively.During can being deflated, the impurity of the particle that exists on substrate top that promptly can not get rid of etc. causes the possibility of leaving a trace on the surface of air-flow at substrate of generation to the bottom of reaction chamber deflated the time.
And existing film deposition apparatus has impurity because of particle etc. and causes the problem that shortens work-ing life.
Summary of the invention
In order to solve above-mentioned prior art problems, the invention provides and a kind ofly separate film deposition apparatus and its method of discharging the unnecessary reaction that can prevent the inter gas that is discharged from reactant gases by remaining in source gas in the reaction chamber.
And, the invention provides and form sweeping gas between a kind of zone that exists by the zone that exists at source gas and reactant gases and separate film deposition apparatus and its method that discharge source gas and sweeping gas can make the simple structureization of reaction chamber with separated region.
In addition, the invention provides a kind of by separating film deposition apparatus and its method that generation that discharge source gas and reactant gases block impurities such as particle can prevent the damage of vacuum ejector and increase the service life.
And, the invention provides and a kind ofly be divided into film deposition apparatus and its method that source gas venting hole and reactant gases venting hole can reduce the interreaction between source gas and the reactant gases by the next door by the venting hole that is formed with the next door of structure along the reaction chamber interior wall and be formed on around the reaction chamber.
In addition, the invention provides and a kind ofly be formed on the top of reaction chamber by the separation off gas unit that will contain active gas gas relief line and reactant gases gas relief line, can be so that the reaction between source gas and the reactant gases forms film deposition apparatus and its method that the impurity of particle etc. can promptly be removed and can prevent to make because of particle the surperficial damaged of substrate.
In a word, the invention provides a kind of film deposition apparatus and its method that can improve the substrate deposition film quality.
The invention provides a kind of film deposition apparatus, it comprises: reaction chamber; Can be loaded in the above-mentioned reaction chamber rotatably and the pedestal of at least one substrate is installed; Be loaded in the top of above-mentioned reaction chamber and a plurality of gases are offered gas feed unit in the above-mentioned reaction chamber respectively; The corresponding separation off gas unit that is loaded on the said base and possesses the gas relief line of discharging surrounding gas with each regional borderline phase that above-mentioned a plurality of gases are provided; Above-mentioned separation off gas unit is provided the vacuum suction unit of inhalation power.
By above-mentioned structure, remaining source gas and reactant gases can be separated the interreaction of discharging and preventing between source gas and the reactant gases.
Wherein, above-mentioned gas relief line is divided into territory, gas area, source, reactant gases zone and sweeping gas zone with the inner area of above-mentioned reaction chamber, and territory, gas area, wherein above-mentioned source and above-mentioned reactant gases zone are isolated mutually by above-mentioned sweeping gas zone.
So, because the separated region in territory, gas area, above-mentioned source and above-mentioned reactant gases zone is worked to separate in above-mentioned sweeping gas zone between territory, gas area, above-mentioned source and above-mentioned reactant gases zone, therefore the source gas of separation off gas and the mixing between the reactant gases effectively.
And above-mentioned gas relief line sucks and discharges impurity or the particle that exists on the substrate that is installed in above the said base.Promptly sucking and discharge particle or impurity to the direction opposite with above-mentioned substrate can prevent because of the damage to substrate surface such as the impurity that generates in the process of impurity discharge.
In addition, preferably include and connect unitary above-mentioned gas relief line of above-mentioned separation off gas and the unitary line that spues of above-mentioned vacuum suction, the top of an end of the wherein above-mentioned line that spues by the above-mentioned gas feed unit is connected with above-mentioned gas relief line and its other end is connected with above-mentioned vacuum suction unit.It is used for discharging remaining source gas and reactant gases to the top of above-mentioned reaction chamber, and makes the exhaust structure summary in the above-mentioned reaction chamber.
And, also can comprise being formed on the above-mentioned reaction chamber edge and the venting hole that is connected with above-mentioned vacuum suction unit.By being formed on, above-mentioned venting hole can separate source gas and the reactant gases of discharge on the above-mentioned reaction chamber edge effectively at a distance in the bottom of the reaction chamber that exists from above-mentioned gas relief line.
Wherein in above-mentioned reaction chamber, can form the next door that prevents expellant gas intermingling around said base.At this moment, above-mentioned next door preferably is formed at least two in the localities Face to face between above-mentioned gas relief line.By being formed with the next door of structure, can prevent by the source gas of venting hole discharge and the mixing between the reactant gases.
In addition, wherein the above-mentioned gas feed unit comprises in order provides territory, gas area, the source of source gas, the first sweeping gas zone of sweeping gas is provided, the reactant gases zone of reactant gases is provided and the second sweeping gas zone of sweeping gas is provided, wherein above-mentioned separation off gas unit comprise with the borderline phase in territory, gas area, above-mentioned source and the above-mentioned first and second sweeping gas zones should be formed on the above-mentioned gas feed unit bottom surface source gas gas relief line and with the corresponding reactant gases gas relief line that is formed on the above-mentioned gas feed unit bottom surface of borderline phase in above-mentioned reactant gases zone and the above-mentioned first and second sweeping gas zones.
By said structure, structureless next door also can prevent remaining source gas and the mixing between the reactant gases, and makes the internal structure summary of above-mentioned reaction chamber.
And, preferably wherein contain a plurality of gas jetting holes of jet flow stream in above-mentioned reaction chamber with the corresponding above-mentioned gas feed unit in territory, gas area, above-mentioned source, above-mentioned reactant gases zone and above-mentioned first and second sweeping gas zone.Promptly form a plurality of gas jetting holes in the above-mentioned gas feed unit, the above-mentioned gas feed unit can be shower nozzle (shower head).
Wherein above-mentioned source gas gas relief line covers border between territory, gas area, above-mentioned source and the above-mentioned first sweeping gas zone and the border between territory, gas area, above-mentioned source and the above-mentioned second sweeping gas zone and is formed, and wherein above-mentioned reactant gases gas relief line covers border between above-mentioned reactant gases zone and the above-mentioned first sweeping gas zone and the border between above-mentioned reactant gases zone and the above-mentioned second sweeping gas zone and is formed.
In addition, can comprise being formed on the above-mentioned gas feed unit and the one end is connected with above-mentioned source gas gas relief line first second line that spues that spues that line and an end be connected with above-mentioned reactant gases gas relief line that wherein above-mentioned vacuum suction unit comprises first vacuum ejector that is connected with above-mentioned first the other end that spues line and second vacuum ejector that is connected with above-mentioned second the other end that spues line.
And, can comprise first venting hole that is used on the corresponding edge that is formed on above-mentioned reaction chamber with territory, gas area, above-mentioned source and is connected with above-mentioned first vacuum ejector; With second venting hole that is used on the corresponding edge that is formed on above-mentioned reaction chamber with above-mentioned reactant gases zone and is connected with above-mentioned second vacuum ejector.Can prevent via the source gas of above-mentioned first and second venting holes discharge and the mixing between the reactant gases by the formation position of separating above-mentioned first and second venting holes.
Be preferably in and form the blended next door that is used for preventing between above-mentioned source gas and the above-mentioned reactant gases in the above-mentioned reaction chamber, wherein above-mentioned next door is positioned on above-mentioned first sweeping gas zone and the above-mentioned second sweeping gas zone.
In addition, above-mentioned source gas gas relief line is discharged above-mentioned source gas and sweeping gas, and above-mentioned reactant gases gas relief line is discharged above-mentioned reactant gases and sweeping gas.Promptly utilize in above-mentioned reaction indoor gas zone less or that do not have and can separate territory, gas area, above-mentioned source and above-mentioned reactant gases zone, do not need to form the other next door that structure is arranged.
In addition, the present invention also provides a kind of membrane deposition method, and it comprises: form the reactant gases zone of the territory, gas area, source to the top of reaction chamber supply source gas, the first sweeping gas zone of supplying with sweeping gas, supply response gas and the second sweeping gas zone of supply sweeping gas in order; The pedestal of at least one substrate is installed at above-mentioned reaction chamber internal rotation; On above-mentioned substrate, supply with above-mentioned source gas, above-mentioned reactant gases and above-mentioned sweeping gas by territory, gas area, above-mentioned source, above-mentioned reactant gases zone and the above-mentioned first and second sweeping gas zones; By utilize borderline phase with territory, gas area, above-mentioned source and the above-mentioned first and second sweeping gas zones corresponding be formed on the above-mentioned gas feed unit bottom surface source gas gas relief line and with the borderline phase in above-mentioned reactant gases zone and the above-mentioned first and second sweeping gas zones corresponding on above-mentioned gas feed unit bottom surface formation reactant gases gas relief line so that surrounding gas is discharged from above-mentioned reaction chamber.
Description of drawings
Fig. 1 is the longitudinal sectional drawing that illustrates according to the film deposition apparatus of the embodiment of the invention;
Fig. 2 is the sectional view that the gas feed unit that forms according to the unit of separation off gas according to an embodiment of the invention shown in the cut-out line II-II of Fig. 1 is shown;
Fig. 3 illustrates according to the reaction chamber inside of the film deposition apparatus according to an embodiment of the invention shown in the cut-out line II-II of Fig. 1 and the sectional view of the relation between the separation off gas unit;
Fig. 4 is the diagrammatic sketch that the variation of gas feed unit shown in Figure 2 is shown;
Fig. 5 is the diagrammatic sketch that the another one variation of gas feed unit shown in Figure 2 is shown;
Fig. 6 is the sectional view that illustrates according to the running principle that has the unitary film deposition apparatus of separation off gas according to an embodiment of the invention shown in the cut-out line IV-IV of Fig. 1;
Fig. 7 is the diagrammatic sketch that illustrates according to the running condition in each stage of film deposition apparatus shown in Figure 1.
Embodiment
Certain exemplary embodiments of the present invention will be described in detail in conjunction with the accompanying drawings.But the present invention has more than and is confined to the foregoing description.
When explanation is of the present invention, in order to make main points of the present invention clear, with the explanation of omitting to known function or structure.
Fig. 1 is the longitudinal sectional drawing that illustrates according to the film deposition apparatus of the embodiment of the invention, and Fig. 2 is the sectional view that the gas feed unit that forms according to the unit of separation off gas according to an embodiment of the invention shown in the cut-out line II-II of Fig. 1 is shown, and Fig. 3 illustrates according to the reaction chamber inside of the film deposition apparatus according to an embodiment of the invention shown in the cut-out line II-II of Fig. 1 and the sectional view of the relation between the separation off gas unit.
As shown in Figure 1, film deposition apparatus 100 according to an embodiment of the invention comprises the reaction chamber 110 that forms R between reaction house; Can be loaded in the reaction chamber 110 rotatably and the pedestal 120 of at least one substrate W is installed; Be loaded in the top of reaction chamber 110 and multiple gases is offered the gas feed unit 130 in the R between above-mentioned reaction house respectively; The corresponding separation off gas unit 140 that is loaded on the pedestal 120 and possesses the gas relief line 141,142 of discharging surrounding gas with each regional borderline phase that above-mentioned multiple gases is provided; Be formed on the venting hole 111 on the edge of reaction chamber 110; Separation off gas unit 140 is provided the vacuum suction unit 150 of inhalation power.
Wherein, above-mentioned multiple gases comprises source gas SG, reactant gases RG and sweeping gas PG, gas relief line the 141, the 142nd is made up of source gas gas relief line 141 and reactant gases gas relief line 142, and wherein source gas gas relief line 141 and reactant gases gas relief line 142 face one another face and spatial separation ground forms.
By said structure, can separate remaining source gas SG and reactant gases RG and carry out exhaust and can prevent the intermingling of source gas SG and reactant gases RG.
R is from the angle of gas feed unit 130 preferably circular between the reaction house of reaction chamber 110.The shape of R can guarantee rotatablely moving smoothly of gas feed unit 130 or pedestal 120 between reaction house.
In addition, the bottom of R is provided with the pedestal 120 of circular plate type between reaction house.As shown in Figure 1, the turning axle 121 that is formed with the lower central part that is applied in reaction chamber 110 of pedestal 120 is connected and can be arranged on rotatably between reaction house in the R.And gas feed unit 130 is rotated and may makes source gas SG and reactant gases RG interreaction, therefore still is preferably in according to an embodiment of the invention rotating basis 120 in the film deposition apparatus 100.
On pedestal 120, install and want sedimentary substrate W, and substrate W spatial separation on pedestal 120 of installing as shown in Figure 3 is configured.Be installed on the pedestal 120 with reference to 3, four substrate W of figure, but the quantity of substrate W is in this example only, a plurality of substrate W such as 6 or 8 can be set according to the size of R between substrate W and reaction house.
Wherein, best spatial separation between the interior wall of the edge of pedestal 120 and reaction chamber 110.Be the size of reaction chamber R during greater than pedestal 120 big or small effect best.Because pedestal 120 is more than or equal between reaction house R the time, interior wall and the pedestal 120 of reaction compartment R can clash when pedestal 120 rotations, and the minuteness particle that produces because of conflict can worsen the thin film deposition quality.
In addition, pedestal 120 not only can rotate and can also turn round up and down.Promptly can change, preferably by adjusting the response location that pedestal 120 finds an optimum up and down according to space response behaviour between gas feed unit 130 and the substrate W or quality of forming film.
And, can install in the bottom of pedestal 120 heated substrate W well heater 123 so that between reaction house the internal temperature of R become the peak optimization reaction temperature.
Well heater 123 plays the function that substrate W is heated to the temperature that can fully react, can add sometimes to be used for the inside of R between reaction chamber 110 or reaction house is heated to the other well heater of temperature of reaction.
Be used for when reacting by heating room R is provided with other well heater, considering that the size etc. of R between the facility of loading and reaction house can be isolated well heater on the outside attached to reaction chamber 110 with predetermined space.
The space that forms between the interior wall of pedestal 120 and reaction chamber R can form next door 112a, 112b.From the physics aspect, next door 112a, 112b are as the internal space of separating reaction room, structure next door R.The content that relates to next door 112a, 112b will be described further.
On the bottom surface of R between reaction house, form a plurality of venting holes 111.Venting hole 111 will remain in the outside that gas in the reaction chamber R is discharged to reaction chamber 110 after deposition reaction, also will further set forth this.
Below by with reference to the accompanying drawings, explain and be used for supplying gas to the inner and deflated gas feed unit 130 of R between reaction house.
With reference to figure 1 and Fig. 2, the gas feed unit 130 that forms the top board of R between reaction house is disc-shapes, forms separation off gas unit 140 on the inner face of the gas feed unit 130 of orientating reaction room R and the bottom surface and is used for the gas jetting hole 131a to 131d of supply gas.
Wherein, gas jetting hole 131a to 131d comprises source gas blowout perforation 131a, reactant gases jet hole 131b and sweeping gas jet hole 131c, 131d, and it is for a plurality of minute apertures or spray the hole and be formed uniformly inner face at gas feed unit 130.So, by forming the effect that a plurality of gas jetting hole 131a to 131d gas feed units 130 can play shower nozzle.
At this moment, source gas blowout perforation 131a is formed among the territory SA of gas area, source, and reactant gases jet hole 131b is formed among the reactant gases region R A, and sweeping gas jet hole 131c, 131d are formed among first sweeping gas zone PA1 and second sweeping gas zone PA2.
The source gas gas relief line 141 and the reactant gases gas relief line 142 of gas area, source territory SA, reactant gases region R A and the separated exhaust unit 140 of sweeping gas zone PA1, PA2 are distinguished.
Separation off gas unit 140 is formed on the inner face of gas feed unit 130, is used for separating and discharges remaining gas or unreacted source gas and reactant gases.
Wherein, source gas gas relief line 141 and reactant gases gas relief line 142 are divided into gas area, source territory SA, reactant gases region R A and first and second sweeping gas zone PA1, PA2 with reaction chamber 110 inside, and gas area, source territory SA and reactant gases region R A are disconnected from each other by first and second sweeping gas zone PA1, PA2.For this reason, first and second sweeping gas zone PA1, PA2 are preferably formed between source gas gas relief line 141 and the reactant gases gas relief line 142.
Because between gas area, source territory SA and reactant gases region R A, form first and second sweeping gas zone PA1, PA2, so can reduce the mixing between deflated source gas and the reactant gases.
Source gas gas relief line 141 and reactant gases gas relief line 142 or face one another face or the face that leans against mutually forms or has " V " shape in order to ensure the space of gas area, source territory SA and reactant gases region R A.
As shown in Figure 2, source gas gas relief line 141 and reactant gases gas relief line 142 are that the center has " V " shape with the middle body of gas feed unit 130, so that the inside of gas feed unit 130 is divided into 4 zones.
Yet the zigzag of source gas gas relief line 141 partly is the mutual spatial separation of meanders of intersection point and reactant gases gas relief line 142, and strictly speaking, the inside of gas feed unit 130 is divided into 3 zones.Therefore, first and second sweeping gas zone PA1, PA2 are divided into gas area, source territory SA and reactant gases region R A with the inside of R between reaction house.
Though source gas gas relief line 141 and reactant gases gas relief line 142 shown in Figure 2 have " V " shape, but its shape is not limited to this shape, can be multiple shapes such as semicircle or half elliptic, the variation that relates to source gas gas relief line 141 and reactant gases gas relief line 142 will be further elaborated with reference to figure 4 and Fig. 5.
Source gas gas relief line 141 and reactant gases gas relief line 142 are formed by the inner face that other tubular member is loaded in gas feed unit 130, also can be configured by the inner face that tubular groove is formed on gas feed unit 130.
A plurality of suction port 141a, the 142a that is used for sucking gas is formed in source gas gas relief line 141 and the reactant gases gas relief line 142 along the longitudinal direction of gas relief line 141,142, and, a plurality of combined hole 141b, 142b can be formed on the outside of suction port 141a, 142a for gas relief line 141,142 is set on gas feed unit 130.Suck quantity, the size of empty 141a, 142a and form the position by considering that exhaust efficiency can be selected.And, suck empty 141a, 142a and can not be eyelet and have slit shape etc.
Owing to have source gas and sweeping gas in the both sides of source gas gas relief line 141, source gas gas relief line 141 sucks and discharges source gas and sweeping gas, and owing to have reactant gases and sweeping gas in the both sides of reactant gases gas relief line 142, reactant gases gas relief line 142 sucks and discharges reactant gases and sweeping gas.Promptly the gas that exists as solid arrow gas relief line that symbol is shown in 141,142 both sides of Fig. 2 can suck and discharge simultaneously.
The sweeping gas that exists on sweeping gas zone PA1, PA2 not only also can carry out exhaust by reactant gases gas relief line 142 by source gas gas relief line 141.Be that source gas gas relief line 141 is discharged source gas and sweeping gas and reactant gases gas relief line 142 discharge reactant gases and sweeping gas.
Therefore, on the middle body of sweeping gas zone PA1, PA2, can form less or have the zone (reference point dotted portion) of sweeping gas hardly.Its zone can be called as separated region SS (Separating Section), and its separated region SS can be formed between source gas gas relief line 141 and the reactant gases gas relief line 142 or be formed on the bottom of source gas gas relief line 141 and reactant gases gas relief line 142.
Even separated region SS is not from visually can be by on the structure of cognition or next door physically, but separated region SS still can prevent source gas and reactant gases intermingling.Promptly do not possess structure or next door physically also can obtain identical effect.
So, also can prevent remaining source gas and the intermingling between the reactant gases by the separated region SS that forms the next door do not possess structure and can make the internal structure summary of R between the reaction house of reaction chamber 110.
In addition, source gas gas relief line 141 and reactant gases gas relief line 142 are connected with the line 161,162 that spues on the outside that is formed on gas feed unit 130.The line 161,162 that spues can comprise first spue line 161 and second line 162 that spues that is connected with reactant gases gas relief line 142 that is connected with source gas gas relief line 141.
Wherein, first the spue end of line 162 of line 161 and second that spues is connected with reactant gases gas relief line 142 with source gas gas relief line 141 respectively through gas feed unit 130, and the side that its other end is positioned at R between reaction house is connected with vacuum suction unit 150 by reaction chamber 110.Its objective is in order to discharge remaining source gas and reactant gases etc. in the top of R between reaction house, therefore can be with the internal structure summary of R between reaction house.
More particularly, on the middle body of gas feed unit 130, run through forming first connecting hole 133 and second connecting hole 134, on a lateral edges of gas feed unit 130, run through forming the 3rd connecting hole 135 and the 4th connecting hole 136.Source gas gas relief line 141 is connected with the 3rd connecting hole 135 with first connecting hole 133 via the outside of gas feed unit 130, and reactant gases gas relief line 142 is connected with the 4th connecting hole 136 with second connecting hole 134.
In addition, be formed on the lateral edges of reaction chamber 110 with first port one 13a and the second port one 13b that spues that spues that the 3rd connecting hole 135 and the 4th connecting hole 136 are connected respectively.Therefore only the line 161,162 of spuing on the top of gas feed unit 130 exposes to the outside, and it does not expose to the outside in the side of reaction chamber 110.So, the line 161,162 of spuing is connected with vacuum suction unit 150 by passing reaction chamber 110, can make the whole gas relief lines that contain the line 161,162 that spues become firmer.
Because if the part of in the line 161,162 that spues, exposing to the outside of reaction chamber 110 too much can because of with external device (ED) between the possibility that makes the line damaged that spues of conflicting increase, the line that therefore preferably as far as possible will spue is installed in the inside of reaction chamber 110.
So, by having large volume on the structure and occupy the outside that is formed on R between reaction house than the exhaust component of large space, can easily make the size of gas feed unit 130 and minimizing reaction chamber 110.
And, on the edge of R bottom surface between reaction house, can form a plurality of venting holes 111.Venting hole 111 can comprise be formed on the corresponding part of gas area, source territory SA on the first venting hole 111a and be formed on the corresponding part of reactant gases region R A on the second venting hole 111b.Wherein, the first venting hole 111a and the second venting hole 111b are preferably formed on the bottom of pedestal 120.
As shown in Figure 3, by between two terminals of source gas gas relief line 141, forming the first venting hole 111a, between two terminals of reactant gases gas relief line 142, form the second venting hole 111b, separate the first venting hole 111a and the second venting hole 111b on the space, the intermingling in the time of can reducing source gas and reactant gases by venting hole 111 exhausts.
Wherein, in order to explain the interior region of R between the reaction house that forms by source gas gas relief line 141 and reactant gases gas relief line 142, in Fig. 3, will be expressed as dotted line with source gas gas relief line 141 and reactant gases gas relief line 142 corresponding parts.
In addition, can form blended next door 112a, the 112b that is used for preventing between source gas and the reactant gases at the medial surface of R between reaction chamber 110 and reaction house.At this moment, next door 112a, 112b are preferably at least 2 and form in the mode of the face of facing one another in the localities between source gas gas relief line 141 and reactant gases gas relief line 142.
With reference to figure 3, next door 112a, 112b be formed on by on the line of the middle body of gas feed unit 130 and with the corresponding part of sweeping gas zone PA1, PA2 on.Source gas gas relief line 141, gas area, source territory SA and the first venting hole 111a can be positioned at a side of the dotted line that is connected next door 112a, 112b, and reactant gases gas relief line 142, reactant gases region R A and the second venting hole 111b can be positioned at its other side.So, by being formed with next door 112a, the 112b of structure in the R between reaction house, can prevent by the mixing between venting hole 111a, 111b deflated source gas and the reactant gases.
Venting hole 111a, 111b can be that benchmark forms mutually symmetrically with separated region SS or physically next door 112a, 112b.
As shown in Figure 1, next door 112a, 112b have with reaction house between the substantially the same height of height of R, and that next door 112a, 112b have near the height of the position of source gas gas relief line 141 and reactant gases gas relief line 142 is just enough.
In addition, dotted arrows symbol shown in Figure 1 is meant the gas flow direction, and from then on direction can be known the top exhaust of expellant gas via R between reaction house.
So, by reacting the top exhaust of remaining source gas in back and reactant gases via R between reaction chamber 110 or reaction house, even source gas and reactant gases intermingling and form impurity such as particle also can reduce the influence that the film quality that the surface damage of substrate W caused because of impurity reduces.
And, by to the top of reaction chamber from discharge remaining source gas and reactant gases, particle under persisting in the microtexture in the time of can reducing exhaust on substrate W etc., and in discharging the process of particle etc., can reduce the influence that causes the film quality reduction because of the surface of meeting substrate W.Promptly at source gas gas relief line 141 and reactant gases gas relief line 142 by in the top of substrate W, be scavenged into the outside of R between reaction house by the particle that will between fine space, the top of substrate W or structure, exist etc. via gas relief line 141,142, can prevent the deterioration of the deposition quality of substrate W.
As shown in Figure 3, vacuum suction unit 150 can comprise with the first venting hole 111a and first spue first vacuum ejector 151 that line 161 is connected with the second venting hole 111b and second, second vacuum ejector 152 that line 162 is connected that spues.Thereby, not only in the inside of reaction chamber 110 and also the exhaust structure of source gas and reactant gases can formed unpack format on its outside to prevent the mixing between source gas and the reactant gases.
Wherein may further include first vacuum line 171 that the first venting hole 111a is connected with first vacuum ejector 151 and second vacuum line 172 that the second venting hole 111b is connected with second vacuum ejector 152.
Further specify the variation of the gas feed unit 130 in the film deposition apparatus 100 according to an embodiment of the invention below.
Fig. 4 is the diagrammatic sketch that the variation of gas feed unit shown in Figure 2 is shown, and Fig. 5 is the diagrammatic sketch that the another one variation of gas feed unit shown in Figure 2 is shown.
Fig. 4 illustrate the gas feed unit 130 faced mutually with pedestal shown in Figure 1 120 ' inner face, be positioned at the roughly rounded source gas gas relief line 141 in the top of pedestal 120 ' and reactant gases gas relief line 142 ' be formed on gas feed unit 130 ' on.
Wherein, source gas gas relief line 141 ' and reactant gases gas relief line 142 ' can be for a plurality of.Source gas gas relief line 141 ' and reactant gases gas relief line 142 ' in can form and be used for deflated exhaust slit 141c, 142c.Air discharge duct can substitute exhaust slit 141c, 142c and be formed.
In addition, on the part of source gas gas relief line 141 ' center on, form gas area, source territory SA, and on the part of reactant gases gas relief line 142 ' center on, form reactant gases region R A.At this moment, source gas gas relief line 141 ' and reactant gases gas relief line 142 ' the outside on form first sweeping gas zone PA1 and second sweeping gas zone PA2.
And, first spue line 161 ' with source gas gas relief line 141 ' be connected, and second line 162 ' that spues is connected with reactant gases gas relief line 142 '.
By utilize sweeping gas zone PA1, PA2 separation source gas area territory SA and reactant gases region R A can separate and the process of exhaust source gas and reactant gases in prevent mixing between source gas and the reactant gases.
In addition, with reference to Fig. 5 of other variation is shown, the top that is positioned at pedestal 120 roughly radially source gas gas relief line 141 ＂ and reactant gases gas relief line 142 ＂ is formed on gas feed unit 130 ＂.Source gas gas relief line 141 ＂ and reactant gases gas relief line 142 ＂ preferably form 2 at least.
Wherein, on the middle body of gas feed unit 130 ＂, can form the wire 145 that is connected respectively with the end of source gas gas relief line 141 ＂ and reactant gases gas relief line 142 ＂.In source gas gas relief line 141 ＂ and reactant gases gas relief line 142 ＂, can form respectively and be used for deflated air discharge duct 141d, 142d.Exhaust slit (not shown) can substitute air discharge duct 141d, 142d and be formed.
In addition, between gas gas relief line 141 ＂ of source, form gas area, source territory SA, and between reactant gases gas relief line 142 ＂, form reactant gases region R A.At this moment, between source gas gas relief line 141 ＂ and reactant gases gas relief line 142 ＂, form first sweeping gas zone PA1 and second sweeping gas zone PA2 respectively.
And first line 161 ＂ and second line 162 ＂ that spue that spue are connected with wire 145.Wherein, wire 145 preferably and be used for preventing that the blended spacer plate 145a between source gas and the reactant gases is connected in wire 145.
By said structure, utilize sweeping gas zone PA1, the PA2 can separation source gas area territory SA and reactant gases region R A, and when exhaust, can prevent the mixing between source gas and the reactant gases.
Can understand the section shape of source gas gas relief line 141 and reactant gases gas relief line 142 with reference to figure 6.The groove that is recessed formation at gas feed unit 130 can form gas relief line 141,142.Said structure has and will suck the advantage of the scope increase of discharging gas.
Because the direction of gas shown in the solid arrow symbol of Fig. 6 discharged, the sweeping gas that the both sides of next door 112a exist be discharged from back separated region SS be formed on next door 112a near.
Though gas relief line the 141, the 142nd in Fig. 6, the recessed portion below the gas feed unit 130, it is not limited thereto shape, can have plate shaped or recessed curved surface shaped or recessed polygonal shape.
Further specify the deposition method and the method for exhausting of film deposition apparatus 100 according to an embodiment of the invention below with reference to Fig. 7.Fig. 7 is the diagrammatic sketch that illustrates according to the running condition in each stage of film deposition apparatus shown in Figure 1.
The relative position that is rotated in substrate W and source gas gas relief line 141 and reactant gases gas relief line 142 in each stage that Fig. 7 illustrates along with pedestal 120 changes.
After substrate W was installed in pedestal 120, pedestal 120 drove and is rotated with the driver element (not shown) that substrate W is connected with turning axle 121 (with reference to figure 1).At this moment, by gas feed unit 130, source gas, reactant gases and sweeping gas are supplied with simultaneously.Wherein, substrate W rotates contact source gas, sweeping gas, reactant gases and sweeping gas in order to finish one-period (cycle).
For the ease of understanding, set forth based on substrate shown in the Far Left in substrate shown in Figure 7.Shown in Fig. 7 (a), in reaction chamber, be installed in the substrate W rotation on the pedestal 120, at first contact source gas and make on its surface that is deposited on substrate W.
Then, shown in Fig. 7 (b), substrate W by sweeping gas and remaining source gas via source gas gas relief line 141 exhausts.At this moment, because impurity that exists or particle etc. can be discharged to the top of gas feed unit 130 by source gas gas relief line 141 with source gas, therefore can reduce the surface damage of the substrate W that causes because of impurity or particle etc. on substrate W.
, on the surface of substrate W, carry out electroless plating by reactant gases thereafter, can form expectation film (with reference in Fig. 7 (a) from the substrate shown in the left side to the second).
At last, by reactant gases remove remaining reactant gases (with reference in Fig. 7 (b) from the substrate shown in the left side to the second).At this moment, impurity that exists on substrate W or particle etc. can be discharged to the top of gas feed unit 130 with reactant gases via reactant gases gas relief line 142.
Finish film on the substrate by process like this, substrate 120 is rotating discharges gas remaining in reaction chamber.At this moment, remaining source gas and sweeping gas can be discharged, and reactant gases and sweeping gas can be discharged by reactant gases gas relief line 142 by source gas gas relief line 141.
And gas remaining on the edge of R between reaction house is discharged by venting hole 111a, 111b, and by venting hole 111a, the disconnected from each other and exhaust by next door 112a, 112b of 111b expellant gas.
Separate with venting hole 111a, 111b and deflated source gas and reactant gases utilize first vacuum ejector 151 and second vacuum ejector 152 to be discharged from fully by gas relief line 141,142.In a word, remaining source gas can separate and independent exhaustion fully with reactant gases.
In addition, membrane deposition method according to an embodiment of the invention comprises: form in order to the reactant gases region R A of the gas area, source of the top of reaction chamber 110 supply source gas territory SA, first sweeping gas zone PA1 that supplies with sweeping gas, supply response gas and second sweeping gas zone PA2 of supply sweeping gas; Be rotated in the pedestal 120 that at least one substrate W is installed in the reaction chamber 110; On pedestal 120, supply with above-mentioned source gas, above-mentioned reactant gases and above-mentioned sweeping gas by gas area, source territory SA, reactant gases region R A and above-mentioned first and second sweeping gas zone PA1, PA2; Borderline phase with gas area, source territory SA and above-mentioned first and second sweeping gas zone PA1, PA2 is corresponding to be formed on the source gas gas relief line 141 on gas feed unit 130 bottom surfaces and to discharge surrounding gas with the corresponding reactant gases gas relief line 142 that is formed on gas feed unit 130 bottom surfaces of borderline phase of reactant gases region R A and first and second sweeping gas regional PA1, PA2 from reaction chamber 110 by utilizing.
Aforesaid film deposition apparatus is that the angle from apparatus for atomic layer deposition illustrates, but it can certainly be applicable to chemical vapor deposition unit etc., it should be understood that it is one of the technology that can grasp technological thought of the present invention or minimum from multiple angles, and it is not limited to the present invention.
As mentioned above, the present invention can prevent that by possessing the separation off gas unit intermingling between remaining source gas and the reactant gases from carrying out unnecessary reaction and can prevent local deposition reactant beyond substrate.
And the present invention need not be provided with in reaction chamber and be used for separation source gas and reactant gases and deflated has the next door of structure, therefore can make the internal structure summary of reaction chamber.
In addition, the present invention can improve the quality of film by preventing generation that remaining source gas and the mixing between the reactant gases reduce the impurity of particle etc.
The present invention by to the top of reaction chamber from and discharge source gas and reactant gases when can reduce deflated between the microtexture on the substrate particle etc. remaining, and can be reduced in the process of discharging particle etc. because of particle and run into the influence that the film quality that the surface of substrate causes worsens.
And the formation position of the present invention by gas relief line and venting hole is divided into territory, gas area, source and reactant gases zone can dually block mixing between source gas and the reactant gases.
In addition, the present invention can reduce impurity because of particle etc. to the damage of vacuum ejector and therefore can prolong the work-ing life of vacuum ejector.
Although shown and described the present invention with reference to its certain exemplary embodiments, but it should be appreciated by those skilled in the art, or else break away under the situation by the spirit and scope of the present invention of claim definition, can carry out various changes on form and the details it.Therefore, those skilled in the art can carry out variations and modifications based on principle of the present invention within the scope of the invention.
Claims (14)
1, a kind of film deposition apparatus, it comprises:
Reaction chamber;
Can be loaded in the above-mentioned reaction chamber rotatably and the pedestal of at least one substrate is installed;
Be loaded in the top of above-mentioned reaction chamber and a plurality of gases are offered gas feed unit in the above-mentioned reaction chamber respectively;
The corresponding separation off gas unit that is loaded on the said base and possesses the gas relief line of discharging surrounding gas with each regional borderline phase that above-mentioned a plurality of gases are provided; With
Above-mentioned separation off gas unit is provided the vacuum suction unit of inhalation power.
2, film deposition apparatus as claimed in claim 1, wherein above-mentioned gas relief line is divided into territory, gas area, source, reactant gases zone and sweeping gas zone with the inner area of above-mentioned reaction chamber, and territory, gas area, wherein above-mentioned source and above-mentioned reactant gases zone are isolated mutually by above-mentioned sweeping gas zone.
3, film deposition apparatus as claimed in claim 2, wherein above-mentioned gas relief line suck and discharge impurity or the particle that exists on the substrate that is installed in above the said base.
4, film deposition apparatus as claimed in claim 1, comprise further connecting unitary above-mentioned gas relief line of above-mentioned separation off gas and the unitary line that spues of above-mentioned vacuum suction that the top of one end of the wherein above-mentioned line that spues by the above-mentioned gas feed unit is connected with above-mentioned gas relief line and its other end is connected with above-mentioned vacuum suction unit.
5, film deposition apparatus as claimed in claim 1 further comprises on the edge that is formed on above-mentioned reaction chamber and the venting hole that is connected with above-mentioned vacuum suction unit.
6, film deposition apparatus as claimed in claim 5 wherein forms in above-mentioned reaction chamber and prevents expellant gas blended next door around said base.
7, film deposition apparatus as claimed in claim 1, wherein the above-mentioned gas feed unit comprises in order provides territory, gas area, the source of source gas, the first sweeping gas zone of sweeping gas is provided, the reactant gases zone of reactant gases is provided and the second sweeping gas zone of sweeping gas is provided, wherein above-mentioned separation off gas unit comprise the borderline phase with territory, gas area, above-mentioned source and the above-mentioned first and second sweeping gas zones corresponding be formed on the above-mentioned gas feed unit bottom surface source gas gas relief line and with the corresponding reactant gases gas relief line that is formed on the above-mentioned gas feed unit bottom surface of borderline phase in above-mentioned reactant gases zone and the above-mentioned first and second sweeping gas zones.
8, film deposition apparatus as claimed in claim 7 wherein contains a plurality of gas jetting holes of jet flow stream in above-mentioned reaction chamber with the corresponding above-mentioned gas feed unit in territory, gas area, above-mentioned source, above-mentioned reactant gases zone and above-mentioned first and second sweeping gas zone.
9, film deposition apparatus as claimed in claim 8, wherein above-mentioned source gas gas relief line covers border between territory, gas area, above-mentioned source and the above-mentioned first sweeping gas zone and the border between territory, gas area, above-mentioned source and the above-mentioned second sweeping gas zone and is formed, and wherein above-mentioned reactant gases gas relief line covers border between above-mentioned reactant gases zone and the above-mentioned first sweeping gas zone and the border between above-mentioned reactant gases zone and the above-mentioned second sweeping gas zone and is formed.
10, film deposition apparatus as claimed in claim 7, comprise further being formed on the above-mentioned gas feed unit and the one end is connected with above-mentioned source gas gas relief line first second line that spues that spues that line and an end be connected with above-mentioned reactant gases gas relief line that wherein above-mentioned vacuum suction unit comprises first vacuum ejector that is connected with above-mentioned first the other end that spues line and second vacuum ejector that is connected with above-mentioned second the other end that spues line.
11, film deposition apparatus as claimed in claim 10 further comprises first venting hole that is used on the corresponding edge that is formed on above-mentioned reaction chamber with territory, gas area, above-mentioned source and is connected with above-mentioned first vacuum ejector; With second venting hole that is used on the corresponding edge that is formed on above-mentioned reaction chamber with above-mentioned reactant gases zone and is connected with above-mentioned second vacuum ejector.
12, film deposition apparatus as claimed in claim 10, form the blended next door be used for preventing between above-mentioned source gas and the above-mentioned reactant gases in above-mentioned reaction chamber, wherein above-mentioned next door is positioned on above-mentioned first sweeping gas zone and the above-mentioned second sweeping gas zone.
13, film deposition apparatus as claimed in claim 7, above-mentioned source gas gas relief line is discharged above-mentioned source gas and sweeping gas, and above-mentioned reactant gases gas relief line is discharged above-mentioned reactant gases and sweeping gas.
14, a kind of membrane deposition method, it comprises:
Form the reactant gases zone of the territory, gas area, source to the top of reaction chamber supply source gas, the first sweeping gas zone of supplying with sweeping gas, supply response gas and the second sweeping gas zone of supply sweeping gas in order;
The pedestal of at least one substrate is installed at above-mentioned reaction chamber internal rotation;
On above-mentioned substrate, supply with above-mentioned source gas, above-mentioned reactant gases and above-mentioned sweeping gas by territory, gas area, above-mentioned source, above-mentioned reactant gases zone and the above-mentioned first and second sweeping gas zones; With
By corresponding with the borderline phase in territory, gas area, above-mentioned source and the above-mentioned first and second sweeping gas zones form on the above-mentioned gas feed unit bottom surface source gas gas relief line and with the corresponding reactant gases gas relief line that on above-mentioned gas feed unit bottom surface, forms of borderline phase in above-mentioned reactant gases zone and the above-mentioned first and second sweeping gas zones so that surrounding gas is discharged from above-mentioned reaction chamber.
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| KR10-2007-0136921 | 2007-12-24 | ||
| KR1020070136921A KR100960958B1 (en) | 2007-12-24 | 2007-12-24 | Apparatus for making thin film and method for making thin film |
| KR1020070136921 | 2007-12-24 |
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| CN101469412A true CN101469412A (en) | 2009-07-01 |
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| CN2008101844420A Active CN101469412B (en) | 2007-12-24 | 2008-12-24 | Thin film deposition device and method thereof |
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| JP (1) | JP5210853B2 (en) |
| KR (1) | KR100960958B1 (en) |
| CN (1) | CN101469412B (en) |
| TW (1) | TWI409356B (en) |
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| CN104380434A (en) * | 2012-05-29 | 2015-02-25 | 周星工程股份有限公司 | Substrate processing device and substrate processing method |
| CN105525276A (en) * | 2014-10-20 | 2016-04-27 | K.C.科技股份有限公司 | Thin film manufacturing method and atomic layer deposition apparatus |
| CN107835868B (en) * | 2015-06-17 | 2020-04-10 | 应用材料公司 | Gas control in a processing chamber |
| KR20180009384A (en) * | 2015-06-17 | 2018-01-26 | 어플라이드 머티어리얼스, 인코포레이티드 | Gas control in process chamber |
| CN107835868A (en) * | 2015-06-17 | 2018-03-23 | 应用材料公司 | Gas control in the processing chamber |
| KR102638572B1 (en) | 2015-06-17 | 2024-02-21 | 어플라이드 머티어리얼스, 인코포레이티드 | Gas control within the process chamber |
| US10590530B2 (en) | 2015-06-17 | 2020-03-17 | Applied Materials, Inc. | Gas control in process chamber |
| CN108780736A (en) * | 2016-01-26 | 2018-11-09 | 周星工程股份有限公司 | Substrate processing apparatus |
| CN108624955A (en) * | 2017-03-16 | 2018-10-09 | 北京北方华创微电子装备有限公司 | Reaction chamber and epitaxial growth equipment |
| CN113061877A (en) * | 2021-04-02 | 2021-07-02 | 杭州中欣晶圆半导体股份有限公司 | High-cleanliness APCVD film forming equipment and film forming method thereof |
| CN114717538A (en) * | 2021-04-21 | 2022-07-08 | 拓荆科技股份有限公司 | Thin film deposition device and deposition method thereof |
| CN114717538B (en) * | 2021-04-21 | 2023-10-31 | 拓荆科技股份有限公司 | Film deposition device and deposition method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100960958B1 (en) | 2010-06-03 |
| KR20090069076A (en) | 2009-06-29 |
| JP2009149989A (en) | 2009-07-09 |
| TW200942635A (en) | 2009-10-16 |
| TWI409356B (en) | 2013-09-21 |
| JP5210853B2 (en) | 2013-06-12 |
| CN101469412B (en) | 2012-09-05 |
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