TW200942635A - Apparatus for making thin film and method for making thin film - Google Patents

Apparatus for making thin film and method for making thin film

Info

Publication number
TW200942635A
TW200942635A TW097150278A TW97150278A TW200942635A TW 200942635 A TW200942635 A TW 200942635A TW 097150278 A TW097150278 A TW 097150278A TW 97150278 A TW97150278 A TW 97150278A TW 200942635 A TW200942635 A TW 200942635A
Authority
TW
Taiwan
Prior art keywords
thin film
making thin
reacting chamber
gas
deposition device
Prior art date
Application number
TW097150278A
Other languages
Chinese (zh)
Other versions
TWI409356B (en
Inventor
In-Chul Shin
Young-Su Jun
Original Assignee
K C Tech Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by K C Tech Co Ltd filed Critical K C Tech Co Ltd
Publication of TW200942635A publication Critical patent/TW200942635A/en
Application granted granted Critical
Publication of TWI409356B publication Critical patent/TWI409356B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention provides a film deposition device and a method thereof. The film deposition device comprises the following components: a reacting chamber, a base which is rotatablely installed in the reacting chamber and is installed with at least one substrate, a gas supplying unit which is installed on the upper part of reacting chamber for respectively providing a plurality of gases to the reacting chamber, a separation exhaust unit which is installed on the base corresponding with the boundary of each area of the plurality of gases and is provided with exhaust lines for discharging the ambient gas, and a vacuum air suction unit which provides suction force to the separation exhaust unit. The film deposition device can separate and discharge the source gas and reacting gas. Furthermore the quality of film can be increased through reducing the generation of impurities of particles,
TW097150278A 2007-12-24 2008-12-23 Apparatus for making thin film and method for making thin film TWI409356B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070136921A KR100960958B1 (en) 2007-12-24 2007-12-24 Apparatus for making thin film and method for making thin film

Publications (2)

Publication Number Publication Date
TW200942635A true TW200942635A (en) 2009-10-16
TWI409356B TWI409356B (en) 2013-09-21

Family

ID=40827210

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097150278A TWI409356B (en) 2007-12-24 2008-12-23 Apparatus for making thin film and method for making thin film

Country Status (4)

Country Link
JP (1) JP5210853B2 (en)
KR (1) KR100960958B1 (en)
CN (1) CN101469412B (en)
TW (1) TWI409356B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI618119B (en) * 2016-06-23 2018-03-11 上海新昇半導體科技有限公司 Method for growing an epitaxial layer

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JP5497423B2 (en) * 2009-12-25 2014-05-21 東京エレクトロン株式会社 Deposition equipment
JP5812606B2 (en) * 2010-02-26 2015-11-17 株式会社日立国際電気 Substrate processing apparatus and semiconductor device manufacturing method
US20120222620A1 (en) 2011-03-01 2012-09-06 Applied Materials, Inc. Atomic Layer Deposition Carousel with Continuous Rotation and Methods of Use
JP2012237026A (en) * 2011-05-10 2012-12-06 Tokyo Electron Ltd Film forming apparatus
KR101830976B1 (en) 2011-06-30 2018-02-22 삼성디스플레이 주식회사 Apparatus for atomic layer deposition
US9109754B2 (en) 2011-10-19 2015-08-18 Applied Materials, Inc. Apparatus and method for providing uniform flow of gas
US8955547B2 (en) 2011-10-19 2015-02-17 Applied Materials, Inc. Apparatus and method for providing uniform flow of gas
US9748125B2 (en) 2012-01-31 2017-08-29 Applied Materials, Inc. Continuous substrate processing system
KR102002042B1 (en) * 2012-05-29 2019-07-19 주성엔지니어링(주) Substrate processing apparatus and substrate processing method
US20140027060A1 (en) * 2012-07-27 2014-01-30 Applied Matericals, Inc Gas distribution apparatus for substrate processing systems
US10174422B2 (en) 2012-10-25 2019-01-08 Applied Materials, Inc. Apparatus for selective gas injection and extraction
JP2014175483A (en) * 2013-03-08 2014-09-22 Hitachi Kokusai Electric Inc Substrate processing apparatus and method for manufacturing semiconductor device
US9831109B2 (en) 2013-03-11 2017-11-28 Applied Materials, Inc. High temperature process chamber lid
US9353440B2 (en) 2013-12-20 2016-05-31 Applied Materials, Inc. Dual-direction chemical delivery system for ALD/CVD chambers
WO2015103358A1 (en) 2014-01-05 2015-07-09 Applied Materials, Inc. Film deposition using spatial atomic layer deposition or pulsed chemical vapor deposition
JP2017157577A (en) * 2014-06-17 2017-09-07 古河機械金属株式会社 Vapor growth device and deposition method
KR102280264B1 (en) * 2014-09-15 2021-07-22 삼성디스플레이 주식회사 Chemical vapor deposition apparatus and method of manufacturing display apparatus using the same
KR101723546B1 (en) * 2014-10-20 2017-04-05 주식회사 케이씨텍 Manufacturing method for film and atomic layer deposition apparatus
US10954597B2 (en) * 2015-03-17 2021-03-23 Asm Ip Holding B.V. Atomic layer deposition apparatus
KR102638572B1 (en) * 2015-06-17 2024-02-21 어플라이드 머티어리얼스, 인코포레이티드 Gas control within the process chamber
JP7008629B2 (en) * 2016-01-26 2022-01-25 ジュスン エンジニアリング カンパニー リミテッド Board processing equipment
KR102567720B1 (en) * 2016-01-26 2023-08-17 주성엔지니어링(주) Apparatus for processing substrate
CN108624955B (en) * 2017-03-16 2019-11-29 北京北方华创微电子装备有限公司 Reaction chamber and epitaxial growth equipment
KR102329169B1 (en) * 2017-12-11 2021-11-23 주식회사 원익아이피에스 Apparatus for Deposition of Thin Film
KR102349006B1 (en) * 2017-12-14 2022-01-11 주식회사 원익아이피에스 Apparatus for Deposition of Thin Film
KR102461199B1 (en) * 2018-01-16 2022-10-31 주성엔지니어링(주) Substrate processing apparatus
KR102577264B1 (en) 2018-04-20 2023-09-11 삼성전자주식회사 Shower head and substrate processing apparatus
CN113061877A (en) * 2021-04-02 2021-07-02 杭州中欣晶圆半导体股份有限公司 High-cleanliness APCVD film forming equipment and film forming method thereof
CN113249707A (en) * 2021-04-21 2021-08-13 拓荆科技股份有限公司 Thin film deposition device and thin film deposition method

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI618119B (en) * 2016-06-23 2018-03-11 上海新昇半導體科技有限公司 Method for growing an epitaxial layer

Also Published As

Publication number Publication date
KR100960958B1 (en) 2010-06-03
TWI409356B (en) 2013-09-21
CN101469412B (en) 2012-09-05
JP2009149989A (en) 2009-07-09
KR20090069076A (en) 2009-06-29
CN101469412A (en) 2009-07-01
JP5210853B2 (en) 2013-06-12

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