TW200942635A - Apparatus for making thin film and method for making thin film - Google Patents
Apparatus for making thin film and method for making thin filmInfo
- Publication number
- TW200942635A TW200942635A TW097150278A TW97150278A TW200942635A TW 200942635 A TW200942635 A TW 200942635A TW 097150278 A TW097150278 A TW 097150278A TW 97150278 A TW97150278 A TW 97150278A TW 200942635 A TW200942635 A TW 200942635A
- Authority
- TW
- Taiwan
- Prior art keywords
- thin film
- making thin
- reacting chamber
- gas
- deposition device
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention provides a film deposition device and a method thereof. The film deposition device comprises the following components: a reacting chamber, a base which is rotatablely installed in the reacting chamber and is installed with at least one substrate, a gas supplying unit which is installed on the upper part of reacting chamber for respectively providing a plurality of gases to the reacting chamber, a separation exhaust unit which is installed on the base corresponding with the boundary of each area of the plurality of gases and is provided with exhaust lines for discharging the ambient gas, and a vacuum air suction unit which provides suction force to the separation exhaust unit. The film deposition device can separate and discharge the source gas and reacting gas. Furthermore the quality of film can be increased through reducing the generation of impurities of particles,
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070136921A KR100960958B1 (en) | 2007-12-24 | 2007-12-24 | Apparatus for making thin film and method for making thin film |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200942635A true TW200942635A (en) | 2009-10-16 |
TWI409356B TWI409356B (en) | 2013-09-21 |
Family
ID=40827210
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW097150278A TWI409356B (en) | 2007-12-24 | 2008-12-23 | Apparatus for making thin film and method for making thin film |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5210853B2 (en) |
KR (1) | KR100960958B1 (en) |
CN (1) | CN101469412B (en) |
TW (1) | TWI409356B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI618119B (en) * | 2016-06-23 | 2018-03-11 | 上海新昇半導體科技有限公司 | Method for growing an epitaxial layer |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5497423B2 (en) * | 2009-12-25 | 2014-05-21 | 東京エレクトロン株式会社 | Deposition equipment |
JP5812606B2 (en) * | 2010-02-26 | 2015-11-17 | 株式会社日立国際電気 | Substrate processing apparatus and semiconductor device manufacturing method |
US20120222620A1 (en) | 2011-03-01 | 2012-09-06 | Applied Materials, Inc. | Atomic Layer Deposition Carousel with Continuous Rotation and Methods of Use |
JP2012237026A (en) * | 2011-05-10 | 2012-12-06 | Tokyo Electron Ltd | Film forming apparatus |
KR101830976B1 (en) | 2011-06-30 | 2018-02-22 | 삼성디스플레이 주식회사 | Apparatus for atomic layer deposition |
US9109754B2 (en) | 2011-10-19 | 2015-08-18 | Applied Materials, Inc. | Apparatus and method for providing uniform flow of gas |
US8955547B2 (en) | 2011-10-19 | 2015-02-17 | Applied Materials, Inc. | Apparatus and method for providing uniform flow of gas |
US9748125B2 (en) | 2012-01-31 | 2017-08-29 | Applied Materials, Inc. | Continuous substrate processing system |
KR102002042B1 (en) * | 2012-05-29 | 2019-07-19 | 주성엔지니어링(주) | Substrate processing apparatus and substrate processing method |
US20140027060A1 (en) * | 2012-07-27 | 2014-01-30 | Applied Matericals, Inc | Gas distribution apparatus for substrate processing systems |
US10174422B2 (en) | 2012-10-25 | 2019-01-08 | Applied Materials, Inc. | Apparatus for selective gas injection and extraction |
JP2014175483A (en) * | 2013-03-08 | 2014-09-22 | Hitachi Kokusai Electric Inc | Substrate processing apparatus and method for manufacturing semiconductor device |
US9831109B2 (en) | 2013-03-11 | 2017-11-28 | Applied Materials, Inc. | High temperature process chamber lid |
US9353440B2 (en) | 2013-12-20 | 2016-05-31 | Applied Materials, Inc. | Dual-direction chemical delivery system for ALD/CVD chambers |
WO2015103358A1 (en) | 2014-01-05 | 2015-07-09 | Applied Materials, Inc. | Film deposition using spatial atomic layer deposition or pulsed chemical vapor deposition |
JP2017157577A (en) * | 2014-06-17 | 2017-09-07 | 古河機械金属株式会社 | Vapor growth device and deposition method |
KR102280264B1 (en) * | 2014-09-15 | 2021-07-22 | 삼성디스플레이 주식회사 | Chemical vapor deposition apparatus and method of manufacturing display apparatus using the same |
KR101723546B1 (en) * | 2014-10-20 | 2017-04-05 | 주식회사 케이씨텍 | Manufacturing method for film and atomic layer deposition apparatus |
US10954597B2 (en) * | 2015-03-17 | 2021-03-23 | Asm Ip Holding B.V. | Atomic layer deposition apparatus |
KR102638572B1 (en) * | 2015-06-17 | 2024-02-21 | 어플라이드 머티어리얼스, 인코포레이티드 | Gas control within the process chamber |
JP7008629B2 (en) * | 2016-01-26 | 2022-01-25 | ジュスン エンジニアリング カンパニー リミテッド | Board processing equipment |
KR102567720B1 (en) * | 2016-01-26 | 2023-08-17 | 주성엔지니어링(주) | Apparatus for processing substrate |
CN108624955B (en) * | 2017-03-16 | 2019-11-29 | 北京北方华创微电子装备有限公司 | Reaction chamber and epitaxial growth equipment |
KR102329169B1 (en) * | 2017-12-11 | 2021-11-23 | 주식회사 원익아이피에스 | Apparatus for Deposition of Thin Film |
KR102349006B1 (en) * | 2017-12-14 | 2022-01-11 | 주식회사 원익아이피에스 | Apparatus for Deposition of Thin Film |
KR102461199B1 (en) * | 2018-01-16 | 2022-10-31 | 주성엔지니어링(주) | Substrate processing apparatus |
KR102577264B1 (en) | 2018-04-20 | 2023-09-11 | 삼성전자주식회사 | Shower head and substrate processing apparatus |
CN113061877A (en) * | 2021-04-02 | 2021-07-02 | 杭州中欣晶圆半导体股份有限公司 | High-cleanliness APCVD film forming equipment and film forming method thereof |
CN113249707A (en) * | 2021-04-21 | 2021-08-13 | 拓荆科技股份有限公司 | Thin film deposition device and thin film deposition method |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61120416A (en) * | 1984-11-16 | 1986-06-07 | Fujitsu Ltd | Chemical vapor deposition equipment |
US4917556A (en) * | 1986-04-28 | 1990-04-17 | Varian Associates, Inc. | Modular wafer transport and processing system |
US4927670A (en) * | 1988-06-22 | 1990-05-22 | Georgia Tech Research Corporation | Chemical vapor deposition of mixed metal oxide coatings |
JP4809562B2 (en) * | 1999-12-22 | 2011-11-09 | アイクストロン、アーゲー | Chemical vapor deposition reaction chamber |
JP3680029B2 (en) * | 2001-08-08 | 2005-08-10 | 三菱重工業株式会社 | Vapor growth method and vapor growth apparatus for metal thin film |
TWI261871B (en) * | 2001-11-13 | 2006-09-11 | Jusung Eng Co Ltd | Apparatus and method for thin film deposition |
DE10207461A1 (en) * | 2002-02-22 | 2003-09-04 | Aixtron Ag | Method and device for depositing multi-component semiconductor layers on at least one substrate |
JP3527914B2 (en) * | 2002-03-27 | 2004-05-17 | 株式会社ルネサステクノロジ | CVD apparatus and cleaning method of CVD apparatus using the same |
KR100497748B1 (en) * | 2002-09-17 | 2005-06-29 | 주식회사 무한 | ALD equament and ALD methode |
US6821563B2 (en) * | 2002-10-02 | 2004-11-23 | Applied Materials, Inc. | Gas distribution system for cyclical layer deposition |
JP2006165173A (en) * | 2004-12-06 | 2006-06-22 | Toshiba Corp | Semiconductor device manufacturing apparatus and manufacturing method |
-
2007
- 2007-12-24 KR KR1020070136921A patent/KR100960958B1/en active IP Right Grant
-
2008
- 2008-12-23 TW TW097150278A patent/TWI409356B/en active
- 2008-12-24 CN CN2008101844420A patent/CN101469412B/en active Active
- 2008-12-24 JP JP2008327443A patent/JP5210853B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI618119B (en) * | 2016-06-23 | 2018-03-11 | 上海新昇半導體科技有限公司 | Method for growing an epitaxial layer |
Also Published As
Publication number | Publication date |
---|---|
KR100960958B1 (en) | 2010-06-03 |
TWI409356B (en) | 2013-09-21 |
CN101469412B (en) | 2012-09-05 |
JP2009149989A (en) | 2009-07-09 |
KR20090069076A (en) | 2009-06-29 |
CN101469412A (en) | 2009-07-01 |
JP5210853B2 (en) | 2013-06-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200942635A (en) | Apparatus for making thin film and method for making thin film | |
TW200802549A (en) | Vertical plasma processing apparatus for semiconductor process | |
TW200737298A (en) | Substrate holding device, exposure device, exposure method, and device fabrication method | |
TW200625503A (en) | Non-contact suction holding apparatus | |
SG146566A1 (en) | Gas flow diffuser | |
JP2010515821A5 (en) | ||
TW200624357A (en) | Gas bearing substrate-loading mechanism for vacuum process systems | |
TW200741823A (en) | Semiconductor device manufacturing method and substrate processing apparatus | |
EP2368646A3 (en) | Air dust collector | |
TW200728496A (en) | CVD reactor with replaceable process chamber cover | |
EP2465979A3 (en) | Apparatus for manufacturing silicon carbide single crystal | |
TW200729339A (en) | Selective etch of films with high dielectric constant with H2 addition | |
TW200628994A (en) | Lithographic apparatus and device manufacturing method | |
WO2009047900A1 (en) | Plasma processing apparatus | |
MY151255A (en) | Electric vacuum cleaner | |
CN103649368B (en) | Gas injection device, apparatus for atomic layer deposition and use the Atomic layer deposition method of this apparatus for atomic layer deposition | |
SG144878A1 (en) | Process for wafer backside polymer removal with wafer front side gas purge | |
EP2036856A3 (en) | Clean bench and method of producing raw material for single crystal silicon | |
TW200735726A (en) | Plasma gun and plasma gun film forming apparatus provided with the same | |
EP2465972A3 (en) | Method and system for thin film deposition | |
SG144879A1 (en) | Process for wafer backside polymer removal and wafer front side scavenger plasma | |
JP2009152576A5 (en) | Film forming apparatus and film forming method | |
SG142224A1 (en) | Apparatus for treating substrates using plasma, method for supplying plasma and method for treating substrates using plasma | |
WO2009041499A1 (en) | Plasma processing apparatus and gas exhaust method | |
CN1697767A (en) | Device for transporting a flat substrate in a vacuum chamber |