SG142224A1 - Apparatus for treating substrates using plasma, method for supplying plasma and method for treating substrates using plasma - Google Patents

Apparatus for treating substrates using plasma, method for supplying plasma and method for treating substrates using plasma

Info

Publication number
SG142224A1
SG142224A1 SG200708496-5A SG2007084965A SG142224A1 SG 142224 A1 SG142224 A1 SG 142224A1 SG 2007084965 A SG2007084965 A SG 2007084965A SG 142224 A1 SG142224 A1 SG 142224A1
Authority
SG
Singapore
Prior art keywords
plasma
treating substrates
supplying
fluorine
oxygen plasma
Prior art date
Application number
SG200708496-5A
Inventor
Chang-Weon Lee
Original Assignee
Psk Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Psk Inc filed Critical Psk Inc
Publication of SG142224A1 publication Critical patent/SG142224A1/en

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

APPARATUS FOR TREATING SUBSTRATES USING PLASMA, METHOD FOR SUPPLYING PLASMA AND METHOD FOR TREATING SUBSTRATES USING PLASMA After oxygen plasma is supplied onto a substrate to primarily strip photoresist formed on the substrate, the oxygen plasma and fluorine-based plasma are supplied to secondly strip the photoresist and residues. The oxygen plasma is directly discharged using a discharger, while the fluorine-based plasma is indirectly generated by the oxygen plasma by supplying a fluorine-based source gas onto the flow path of the oxygen plasma. The plasma is supplied via a baffle where a plurality of through-holes are formed, and ions contained in the plasma are filtered by the grounded baffle. (Fig. 1)
SG200708496-5A 2006-10-27 2007-09-20 Apparatus for treating substrates using plasma, method for supplying plasma and method for treating substrates using plasma SG142224A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060104895A KR100762714B1 (en) 2006-10-27 2006-10-27 Apparatus for treating the substrate using plasma, method for supplying plasma and method for treating the substrate using plasma

Publications (1)

Publication Number Publication Date
SG142224A1 true SG142224A1 (en) 2008-05-28

Family

ID=39390620

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200708496-5A SG142224A1 (en) 2006-10-27 2007-09-20 Apparatus for treating substrates using plasma, method for supplying plasma and method for treating substrates using plasma

Country Status (5)

Country Link
JP (1) JP2008113001A (en)
KR (1) KR100762714B1 (en)
CN (1) CN100590788C (en)
SG (1) SG142224A1 (en)
TW (1) TWI354328B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11859153B2 (en) * 2021-11-08 2024-01-02 Changxin Memory Technologies, Inc. Method for cleaning substrate and system for cleaning substrate

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100851236B1 (en) * 2007-03-06 2008-08-20 피에스케이 주식회사 Exhausting apparatus and substrate treating apparatus including the same, and method for exhausting
KR100978859B1 (en) * 2008-07-11 2010-08-31 피에스케이 주식회사 Apparatus for generating hollow cathode plasma and apparatus for treating a large area substrate by hollow cathode plasma
JP5508701B2 (en) * 2008-08-28 2014-06-04 岩谷産業株式会社 Semiconductor processing apparatus and processing method
JP5094670B2 (en) * 2008-10-02 2012-12-12 株式会社アルバック Etching apparatus and micromachine manufacturing method
JP5094672B2 (en) * 2008-10-02 2012-12-12 株式会社アルバック Etching device
KR101446632B1 (en) * 2013-06-24 2014-10-06 피에스케이 주식회사 Apparatus and method for treating substrate
JP6247087B2 (en) * 2013-12-18 2017-12-13 東京エレクトロン株式会社 Processing apparatus and method for generating active species
CN109545645A (en) * 2019-01-17 2019-03-29 中国科学技术大学 A kind of plasma etching apparatus and its disperser
TW202221789A (en) * 2020-11-27 2022-06-01 南韓商Ｐｓｋ有限公司 Method and apparatus for treating substrate

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5887825A (en) * 1981-11-20 1983-05-25 Fujitsu Ltd Microwave plasma treatment apparatus
JPH07130713A (en) * 1993-11-04 1995-05-19 Fujitsu Ltd Down flow etching apparatus
JP2000124204A (en) 1998-10-20 2000-04-28 Tokyo Electron Ltd Method for measuring anions in plasma, and method and device for plasma treatment
US6458722B1 (en) * 2000-10-25 2002-10-01 Applied Materials, Inc. Controlled method of silicon-rich oxide deposition using HDP-CVD
US20060118240A1 (en) * 2004-12-03 2006-06-08 Applied Science And Technology, Inc. Methods and apparatus for downstream dissociation of gases
JP2006270030A (en) 2005-02-28 2006-10-05 Tokyo Electron Ltd Plasma treatment method and post-treatment method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11859153B2 (en) * 2021-11-08 2024-01-02 Changxin Memory Technologies, Inc. Method for cleaning substrate and system for cleaning substrate

Also Published As

Publication number Publication date
KR100762714B1 (en) 2007-10-02
CN100590788C (en) 2010-02-17
TW200820336A (en) 2008-05-01
JP2008113001A (en) 2008-05-15
TWI354328B (en) 2011-12-11
CN101170054A (en) 2008-04-30

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