200820336 i5pif.doc 九、發明說明： •【發明所屬之技術領域】200820336 i5pif.doc IX. Description of the invention: • [Technical field to which the invention belongs]
...本發明是有關於處理基板的裝置和方法，特別是有關 - 於使用電漿處理基板的裝置和方法。 P _ I先前技術】 一使用光阻(photoresist)的微影製程(馳〇graphy pr〇cess) 是半導體製造中所必須的。光阻由對光敏感的有機高分子 # /或者光敏製劑與高分子的混合物製成。在光阻曝光並顯影 後，光阻圖案形成於基板上。光阻圖案用於在钱刻基板或 形成於基板上的層時將圖案轉印(iranscript)K基板上。這 種高分子被稱作光阻，並且使用光源在基板上形成精細圖 案的製程被稱作微影製程。 在用於將®案轉印至基板上後，藉由灰化(ashing)方式 從基板移除光阻圖案。 在^ A灰化衣私中，在晶片放置於加熱至高溫（攝氏 一⑽至3⑽度）的加熱器卡盤(heater chuck)上時，氧雷漿 Φ Ϊ鎌彼此反應，以便歸光阻。氧氣⑴2)驗作為反 • 並且可以將另一氣體與反應氣體混合以增强灰化 夕文月匕。 然:，習知灰化製程不可避免地遇到在基板上形成氧 、昝物層4者乘】餘$留物的問題。由於氧化物層或殘留物會 導致不要的圖茶’必須克服這些問題以便改進半導體器件 的特性。 . w σ 【發明内容】 6 200820336 2^/i 5pif.doc 丰智明的貫施例針對處理基板的裝置。你一，、他例T 的裝置包括··第一產生單元(first generator unit)，配置為供 應第一源氣體(first source gas)至放電空間（discharge space) 並對供應的第一源氣體放電以便產生第一電漿(first pksma);第二產生單元，配置為供應第二源氣體至第一電 聚的流，路徑並使用第一電漿對供應的第二源氣體放電以 便產生第—電漿，以及處理室(pr〇cess冰，第一電漿 和第-電漿供應到處理室並且藉由使用第一電聚和第二電 聚處，過的革巴標基板細get substrate)裝載於處理室中。 +發明的實施例針對一種供應電漿的方法。在一實施 3::=:括二供應第一源氣體至放電空間並藉由使用 放^對供應的弟—源氣體放電 二源氣體至第—電漿的流程路徑二由二^ 電聚=應的f二源氣體放電以便產生第二= ‘源氣體至第一 電漿進行放電 例中的方法包括：將_的方法。在—實施 氣體產生的第—雪喂2户二二爽涇室内’供應從第-源 電漿的流程路徑Γ=;!;供應第 座生的第二電漿以便處理基板。使用弟 【實施方式】 發明本發明，附圖中顯示了本 現並且不應解釋 地，提供這些實施例是二切 200820336 I 5pif.doc 且可以舲本發明的範圍全面地轉達給本領域熟知此項技藝 者。圖中，爲了清晰起見，誇大了層和區域的厚度。 …儘官將晶片描述爲基板的實例，但本發明並不局限於 更進步地，儘管針對用於剝離晶片上的光阻的灰化 衣枉“述本發明的實施例，但本發明並不局限於此並且可 以應用於巧溧製程（cleaning process)、蝕刻製程（你hing process) > ^ ® f t fl(surface modification process)^^ 所有使用電漿的製程。 狀圖1繪不了根據本發明的基板處理裝置1。基板處理 裝f 1包括晶片w裝載於其中的處理室100以及安裝於處 ，至1〇0上的電漿供應單元200，電漿供應單元200配置 爲向裝載於處理室1〇〇内的晶片w供應電漿。 處理至100具有形成開口的頂部、與地面平行設置的 底壁以及垂直於底壁延伸的侧壁。如圖丨所示，處理室 接地以便防止在處理室1⑻上方產生的電漿中的離子進入 處理室1GG，這將在下文中詳細描述。 :卡盤120提供於處理室1〇〇内部，並且晶片w裝載於 卡盤120上。卡盤12〇與底壁平行地設置於其上方。卡盤 120用於保持裝載的晶片|。加鮮（未11示）可以提供 於卡盤120的内部以便將保持的晶片w加熱至預定的處理 溫度。 如圖1所示，卡盤120接地以便防止在處理室！⑻上 方產生的電漿内的離子進入處理室1〇〇，這將在下文中詳 、細 4¾ 〇 200820336 Z3/i5pif.d〇c 多個排氣孔102沿卡盤120的週邊形成 ，壁上。提供多個排氣…便降 =二室： ^處理裝置1 _力或者將在基板處理m ^ 生的反應副產品排放至處理室100的外部。排、i :排氣線路140 ’並且處理室·内的 產 ： 處理室_的外部。排氣闕門142安裝於排I線路^^ 以便打開並關閉排氣線路140。 電漿供應單元200安裝於處理室1〇〇上。電廄 = 200產生用於剥離晶片…上的光阻的電漿並將産:；電 水供應到處理室刚内。電漿供應單元2⑽ 帝將 220 ^ ^ 240 . 260 ^ 280 内官240具有形成開口的底部、頂壁以及從了頁壁向下 朝處理室100延伸的側壁。内管例如是由石英製成， 並由内管240的頂面及侧壁定義放電空間242。放電空間 242—是對向外供應的源氣體進行放電以便產生電漿=空 間。乐-源氣體沿下文詳細描述的第—供應、線路222a供應 ^放電空間242。第-源氣體由連接内管24〇的侧壁的放 =器260放電。在放電空間242中，從第一源氣體產生電 水。產生的電漿經形成於其下方的開口遷移到處理室1〇〇。 产第一流入孔244形成於内管240的頂壁，並且第一源 氣體經第一流入孔244流入放電空間242。 將私漿至220包圍内管240的外侧。如下文描述的，電 表至220例如疋可以使產生第一電漿和第二電漿的空間與 外界隔離，以便對隔離的空間抽真空。電漿室22〇的頂壁 200820336. /1 opif.doc 對應於内管240的頂壁，侧壁對應於内管24〇的侧壁。第 一貫孔222形成於電漿室22〇的頂壁以便對應第一流入孔 244。第一供應線路222a連接第一貫孔222，並且第一源 • 氣體沿第一供應線路222a流動。第一閥門222b安裝於第 • 一供應線路222a上以便打開並關閉第一供應線路222a。 弟一流入孔224形成於電漿室220的下侧壁。第二源 氣體經弟一入孔224流入電漿室220。第二供應線路224a 連接第二流入孔224，並且第二源氣體沿第二供應線路 224a流動。第一閥門224b安裝於第二供應線路224a上以 便打開並關閉第二供應線路224a。 第二流入孔224設置於内管240的下端部。因而，第 一源氣體經弟一流入孔224供應至電衆室220内並供應至 第一電漿的遷移路徑上。這樣做是爲了藉由使用第一電漿 的能量從第二源氣體產生第二電漿。 第二貫孔226形成於電漿室22〇的另一侧。放電器26〇 連接第二貫孔226並配置成對供應至放電空間2幻内的第 籲一源氣體放電。放電斋260包括用於振盪微波的微波振盪 器（microwave 〇SCillat〇r)262以及用於傳送微波的波導 • (wave§uide)264。波導264的一侧連接微波振盪器262，並 且其另一侧經弟一貝孔226連接内管240。第二貫孔226 安裝於第一流入孔244附近，允許經波導264傳送的微波 對經第一流入孔244供應至放電空間2犯上的第一源氣體 放電，並在放電空間242上產生第一電裝。 儘管本實施例的特徵在於藉由使^波缝器262和 10 200820336 25718pif.doc 波導264對放電空間242内的第—源氣體放電， 領域热知此技蟄者而言，顯而易見放電器26〇可以由^ 方式替代。 53種 如圖1所示，擴散管道(di&Sion duCt)280連接電笋— - 220的底部並且擴散管道280的底部連接纽室100 ^ 端。由於擴散管道280具有向上逐漸變細的顯面，、 成於電漿室.220的底部的開σ排放至電漿室22g的外^的 • 第一電衆和第二電漿沿擴散管道擴散。擔板29〇安步 於擴散管道280和處理室100之間。由於多個貫孔292开: 成於擋板290上，經擴散管道28〇遷移至處理室1〇〇的^ 部的第一電漿和第二電漿均勻供應至晶片w上。 在電漿所包含㈣份中，主錢自由基加細㈣ ㈣子歧用電漿的製程相關聯。自由基具有不餘和鍵 (incomplete binding)並且是電中性的。由於不飽和鍵的 存在，自由基的反應性相當高。通常，自由基與晶片…上 鲁 的材料發生化學反應以便執行此製程。然而，離子帶有查 電荷以便依據預定方向上的電位差進行加速，並與晶片w • 上的材料發生化學反應以便執行此製程。 • 自由基和離子均包含於經擴散管道280在擋板290上 方遷移的第一電漿和第二電漿内。自由基遷移至晶片1上 f以便與晶片W上的光阻發生化學反應，同時帶有預定電 荷的離子朝晶片W加速並碰撞晶片w上的光阻而引起物 理反應。在加速的離子碰撞光阻以外的圖宰的愔 能產生衝擊(s⑽以影響(咖細圖^ 2况 200820336 25718pif.doc 圖案帶有用於下一製程的預定電荷。然而，在離子碰撞晶 片W上的圖案時，圖案的預定電荷量變化，對下一警程= 生影響。 衣壬 爲了克服上述缺點，擋板290如圖1所示地n 撞㈣上方遷移的第一《和第二電二自也=經： 形成於擋板.290上的貫孔292遷移至晶片w上方，同時其 中的離子由接地的擋板290隔離以便防止其到達晶片 也就是，由於只有自由基到達晶片w上，’、 _ς曰離 子影響。 又雕 現在參照圖2至圖3D描述基板處理方法。 ^ W賴至處理室·内（S1G)。裝載的晶片w 於卡盤12G上。如上文所討論的，加熱器（未圖示）可 =供於卡盤12G内部並配置為將晶片W加熱至處理溫 度。 .第一供應線路222a上的第一閥門222b打開，並且經 應線路222a將第—源氣體供應助管内部的放電 ^=42内（S20)。第一源氣體經内管24〇的第一流入 孔244供應至放電空間2幻内。 ^圖3A所示，藉由使用放電器對放電空間242 源氣體放電㈣）。從微波振盪器加滅的 =;^ 264傳送;内管·的外壁。藉由傳送的微波 第一 242内的第—源氣體放電來從第一源氣體產生 在於反電空間242内供應第一源氣體之前，放電空間 12 200820336 25718pif.doc 24.2必須保持在真空狀態。由於這個原因，藉由提供於處 理室100的底壁的排氣孔(exhaust hole) 102和排氣線路 (exhaust line)140降低放電空間242的内部壓力，同時將放 電空词242保持在真空狀態。The present invention relates to apparatus and methods for processing substrates, and more particularly to apparatus and methods for processing substrates using plasma. P _ I Prior Art A lithography process using photoresist is a must in semiconductor manufacturing. The photoresist is made of a light-sensitive organic polymer # / or a mixture of a photosensitive agent and a polymer. After the photoresist is exposed and developed, a photoresist pattern is formed on the substrate. The photoresist pattern is used to transfer a pattern onto a K substrate when engraving a substrate or a layer formed on the substrate. Such a polymer is called a photoresist, and a process of forming a fine pattern on a substrate using a light source is called a lithography process. After being used to transfer the ® film onto the substrate, the photoresist pattern is removed from the substrate by ashing. In the AA ashing, when the wafer is placed on a heater chuck heated to a high temperature (one (10) to three (10) degrees Celsius), the oxygen pulsing Φ Ϊ镰 reacts with each other to return to the photoresist. Oxygen (1) 2) is tested as a counter • and another gas can be mixed with the reaction gas to enhance ashing. However, the conventional ashing process inevitably encounters the problem of forming oxygen and sputum layer 4 on the substrate. Since the oxide layer or residue may cause unwanted pattern tea, these problems must be overcome in order to improve the characteristics of the semiconductor device. w σ [Summary] 6 200820336 2^/i 5pif.doc The application of Feng Zhiming is directed to a device for processing a substrate. 1. The apparatus of the example T includes a first generator unit configured to supply a first source gas to a discharge space and discharge the supplied first source gas. To generate a first plasma (first pksma); a second generating unit configured to supply a second source gas to the first electropolymerized stream, the path and discharging the supplied second source gas using the first plasma to generate a first Plasma, and processing chamber (pr〇cess ice, first plasma and plasma-to-plasma supplied to the processing chamber and through the use of the first electropolymerization and the second electropolymer, the fine-grained substrate) Loaded in the processing chamber. + Embodiments of the invention are directed to a method of supplying plasma. In an implementation of 3::=: two supply of the first source gas to the discharge space and by using the pair of supply source gas source discharge two source gas to the first plasma flow path two by two ^ = The method of discharging the two source gases to generate the second = 'source gas to the first plasma for discharging the method includes: a method of _. In the process of implementing the gas-generating first-snow-feeding 2 households, the second process of supplying the plasma from the first source plasma is supplied; the second plasma is supplied to the substrate to process the substrate. DETAILED DESCRIPTION OF THE INVENTION [Invention] The present invention is shown in the accompanying drawings and is not to be construed as an exemplification of the present invention, which is a singularity of the present invention and can be fully conveyed to the extent of the present invention. Artist. In the drawings, the thickness of layers and regions are exaggerated for clarity. ... the wafer is described as an example of a substrate, but the invention is not limited to more advanced, although the embodiment of the invention is described with respect to the ashing plaque for stripping the photoresist on the wafer, the invention is not Limited to this and can be applied to the cleaning process, the etching process (your process) > ^ ft fl (surface modification process) ^ ^ all processes using plasma. Figure 1 can not be drawn according to the invention Substrate processing apparatus 1. The substrate processing apparatus f1 includes a processing chamber 100 in which the wafer w is loaded, and a plasma supply unit 200 mounted thereon to the plasma supply unit 200, which is configured to be loaded into the processing chamber. The wafer w in one turn is supplied with plasma. The process to 100 has a top portion forming an opening, a bottom wall disposed in parallel with the ground, and a side wall extending perpendicular to the bottom wall. As shown in FIG. The ions in the plasma generated above the chamber 1 (8) enter the processing chamber 1GG, which will be described in detail below. The chuck 120 is provided inside the processing chamber 1 and the wafer w is loaded on the chuck 120. The chuck 12 The bottom wall is disposed in parallel therewith. The chuck 120 is for holding the loaded wafer. The freshening (not shown) may be provided inside the chuck 120 to heat the held wafer w to a predetermined processing temperature. As shown in Fig. 1, the chuck 120 is grounded to prevent ions in the plasma generated above the processing chamber! (8) from entering the processing chamber 1 〇〇, which will be detailed, detailed, and detailed in the following paragraphs: 200820336 Z3/i5pif.d〇c The air vent 102 is formed along the periphery of the chuck 120, on the wall. A plurality of exhaust gases are provided... Descending = two chambers: ^ Processing device 1 _ force or discharge of reaction by-products in the substrate processing to the outside of the processing chamber 100 Row, i: exhaust line 140' and processing chamber: the outside of the processing chamber_. The exhaust valve 142 is installed in the row I circuit to open and close the exhaust line 140. The plasma supply unit 200 Installed on the processing chamber 1 廄. 廄 = 200 produces a plasma for stripping the photoresist on the wafer... and supplies:; the electric water is supplied to the processing chamber just now. The plasma supply unit 2 (10) Emperor will 220 ^ ^ 240 . 260 ^ 280 The inner officer 240 has a bottom that forms an opening, a top wall, and a The wall of the page extends downward toward the side wall of the processing chamber 100. The inner tube is, for example, made of quartz, and defines a discharge space 242 from the top and side walls of the inner tube 240. The discharge space 242 is for source gas supplied outward. The discharge is to generate a plasma = space. The Le-source gas is supplied to the discharge space 242 along a first supply, line 222a, which is described in detail below. The first source gas is discharged by a discharger 260 that is connected to the side wall of the inner tube 24A. In the discharge space 242, electric water is generated from the first source gas. The generated plasma migrates to the processing chamber 1 through an opening formed thereunder. The first inflow hole 244 is formed in the top wall of the inner tube 240, and the first source gas flows into the discharge space 242 through the first inflow hole 244. The squeegee is 220 to surround the outside of the inner tube 240. As described below, the meter to 220, for example, may isolate the space in which the first plasma and the second plasma are generated from the outside to evacuate the isolated space. The top wall of the plasma chamber 22〇 200820336. /1 opif.doc corresponds to the top wall of the inner tube 240, and the side wall corresponds to the side wall of the inner tube 24〇. The first uniform hole 222 is formed in the top wall of the plasma chamber 22 to correspond to the first inflow hole 244. The first supply line 222a is connected to the first through hole 222, and the first source gas flows along the first supply line 222a. The first valve 222b is mounted on the first supply line 222a to open and close the first supply line 222a. An inflow hole 224 is formed in the lower side wall of the plasma chamber 220. The second source gas flows into the plasma chamber 220 via the inlet 224. The second supply line 224a is connected to the second inflow hole 224, and the second source gas flows along the second supply line 224a. The first valve 224b is mounted on the second supply line 224a to open and close the second supply line 224a. The second inflow hole 224 is provided at a lower end portion of the inner tube 240. Thus, the first source gas is supplied into the electric chamber 220 through the inflow hole 224 and supplied to the migration path of the first plasma. This is done to generate a second plasma from the second source gas by using the energy of the first plasma. The second through hole 226 is formed on the other side of the plasma chamber 22A. The arrester 26'' is connected to the second through hole 226 and is configured to discharge the first source gas supplied into the discharge space 2. The discharge 260 includes a microwave oscillator (microwave 〇SCillat〇r) 262 for oscillating microwaves and a waveguide (wave §uide) 264 for transmitting microwaves. One side of the waveguide 264 is connected to the microwave oscillator 262, and the other side thereof is connected to the inner tube 240 via a via hole 226. The second through hole 226 is installed near the first inflow hole 244, allowing the microwave transmitted through the waveguide 264 to discharge the first source gas supplied to the discharge space 2 through the first inflow hole 244, and generating the first on the discharge space 242. Denso. Although the present embodiment is characterized in that the first source gas in the discharge space 242 is discharged by the wave splicer 262 and the 10200820336 25718pif.doc waveguide 264, it is apparent to those skilled in the art that the discharger 26〇 Can be replaced by ^. 53 species As shown in Fig. 1, a diffusion pipe (di& Sion duCt) 280 is connected to the bottom of the electric shoot-220 and the bottom of the diffusion pipe 280 is connected to the 100-end of the new chamber. Since the diffusion duct 280 has an upwardly tapering surface, the opening σ of the bottom of the plasma chamber 220 is discharged to the outside of the plasma chamber 22g. • The first electric and the second plasma diffuse along the diffusion duct. . The plate 29 is placed between the diffusion pipe 280 and the processing chamber 100. Since the plurality of through holes 292 are opened: on the baffle 290, the first plasma and the second plasma which have migrated to the processing chamber 1 through the diffusion duct 28 are uniformly supplied onto the wafer w. In the (four) parts of the plasma, the main money radical is added to the fine (4) (four) sub-distribution process associated with the plasma. Free radicals have incomplete binding and are electrically neutral. Due to the presence of unsaturated bonds, the reactivity of free radicals is quite high. Typically, free radicals chemically react with the material of the wafer... to perform this process. However, the ions are charged to accelerate in accordance with the potential difference in the predetermined direction and chemically react with the material on the wafer w to perform the process. • Both free radicals and ions are contained within the first plasma and the second plasma that migrate above the baffle 290 via the diffusion conduit 280. The radicals migrate to the wafer 1 to chemically react with the photoresist on the wafer W, while ions with a predetermined charge accelerate toward the wafer W and collide with the photoresist on the wafer w to cause a physical reaction. The 愔 愔 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 加速 加速 加速 加速 加速 加速 加速 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖In the pattern, the predetermined amount of charge of the pattern changes, affecting the next polution =. In order to overcome the above disadvantages, the baffle 290 is n-clip (four) as shown in FIG. The via 292 formed on the baffle .290 migrates over the wafer w while the ions therein are isolated by the grounded baffle 290 to prevent it from reaching the wafer, that is, since only free radicals reach the wafer w, ', _ ς曰 ion effect. Also engraving The substrate processing method will now be described with reference to Figures 2 to 3D. ^ W to the processing chamber · inside (S1G). The loaded wafer w is on the chuck 12G. As discussed above, heating The device (not shown) can be supplied to the inside of the chuck 12G and configured to heat the wafer W to the processing temperature. The first valve 222b on the first supply line 222a is opened, and the first source gas is supplied via the line 222a. Help the internal discharge ^=42 S20) The first source gas is supplied to the discharge space 2 through the first inflow hole 244 of the inner tube 24A. As shown in Fig. 3A, the discharge gas is discharged to the discharge space 242 by using a discharger (4). The outer wall of the inner tube is supplied from the first source gas before the first source gas is supplied in the counter-electric space 242 by the first source gas discharge in the transmitted microwave first 242. The discharge space 12 200820336 25718pif.doc 24.2 must be kept in a vacuum state. For this reason, the discharge space is lowered by an exhaust hole 102 and an exhaust line 140 provided to the bottom wall of the process chamber 100. The internal pressure of 242 while maintaining the discharge empty word 242 in a vacuum state.
如圖3B所示，產生的第一電漿在經第一流入孔244 供應的第一源氣體的流動方向上經擴散管道280向下遷 移。在此處，如先前所提到的，由於提供於擴散管道280 的底端的擋板290處於接地狀態，第一電漿内的自由基(圖 1以符號〇標示)經多個貫孔292遷移至晶片w上方，而 第:電漿内的離子（圖中以㊉符號標示）由擋板290隔離。 在晶片w上方遷移的自由基與晶片w上的光阻反應以便 初步剝離光阻（S40) 〇 i 上文所描逑的，提供第一源氣體以便在電漿狀態下 ^剝離w w。第—·體可以 ΓΗ°Γ氣體可以是氧⑻和氮⑽或者 作第灰化製程的效能。此外，各種氣體可用 光阻，這:二別是許多種氣體可用於剝離晶片1上的 :疋本7員域熟知此技藝者應理解的。 内産生^第—源氣體供應至在於放電空間242 電_流;路徑：，部的開口向下排出的第- 二供應線路224a時，第二源f = f二閥門咖打開第 應至第一電槳的、、穿浐原虱體厶弟―供應線路224a供 错由從微波吸收能量而產生的第一電漿具有高能量位 200820336 25718pif.doc 準>1亚且=應至第—電漿的流程路徑上的第二源氣體藉由 與^ €水，仃能量轉移的方式口及收能量。_，從第二 源氣體產生第二電漿（S6〇)。 3D所不，產生的第二電漿在經第一流入孔—244 梦Ί弟老•氣體的流動方向上經擴散管道280向下遷 山的，1如^所提到的，由於提供於擴散管道280 以符號□標示)經多=電裝中的自由基(圖中 二電漿中_子^ ί遷移至晶片W上方並且第 曰M w 圖中从付唬標不）由擋板290隔離。在 :制離光阻Λ移的自域與晶片w上的光阻反應以便二 一人4離先阻和反應副產品（S70)。 晶片錢縣錢剝離 上文提到的，藉由放電:第 ==== 由使用第一泰將必λ 九版座土弟一電叙亚且錯 氣體可以7;二晶片wjL的殘留物或類似物。第二源 並且且有=(^°rine-based)氣體（例如，cf4或CHF3) 儘管本實施體例二=: 項技蓺者ρ Θ 土礼耻，但令領域熟知此 二考絲員而易見可以使用多種其他氣體。 而，甚至少量的附加第二源氣體都可以使曰M W卜 的到影響並在電聚的產生過程中使; 對第ΐ源氣體進行間接放電。 原因。 的，對弟—源赠進行間接放電有兩個 14 200820336 25718pif.doc 第二源氣體直接放γ 26 G對反應性高於第-源氣體的 有相當高的能量。守，错由直接放電產生的第二電漿具 晶片w上的圖案當高的能量供應至晶片w上， 氣體間接放電時，域叉到影響。然而，當對第二源 於直接放電的能吾I間接放電產生的第二電漿的能量低 第二，备在：/而’對圖案的影響減小。 一源氣體的^二源_内對反應性高於第 爲了解决上述問，内管240可能損壞。 間接放電來產生第二=在内官24G的外部對第二源氣體 的狀處理裝請理之後 使用根據本發明的==片日，圖4Β是顯示 的SEM照片。 置處理日日片W之後的狀態 如上文所描述的，藉士 相當高的能量。因而，當該第二j*:斤的第二電漿具有 ^ W; 而，稭由間接放電產生纟Μ — : 所繪示的。然 便防止晶片較低的能量以 根據本發日ϋ板上的光 β 離。此外，抑制了基板 t夂邊物可以有效地被剝 儘管結合附圖中=:=:=管的損壞。 明，但不局限於此。本領域熟x々只施例描述了本發 脫離本發明的範圍及精神的；二項技蟄者顯而易見在不 下可以進行各種替換、修 200820336 2571Hpif.doc 改以及變化。 【圖式簡單說明】 圖1是根據本發明的基板處理裝置的示音固 根據本發明的基板處理方法程圖。 的示意圖。目3D是根據本發_基板處理方法的流程As shown in Fig. 3B, the generated first plasma is moved downward through the diffusion pipe 280 in the flow direction of the first source gas supplied through the first inflow hole 244. Here, as previously mentioned, since the baffle 290 provided at the bottom end of the diffusion duct 280 is in a grounded state, radicals in the first plasma (indicated by the symbol 图 in FIG. 1) are migrated through the plurality of through holes 292. Up to the wafer w, and the ions in the plasma (indicated by the ten symbol in the figure) are isolated by the baffle 290. The radicals migrating over the wafer w react with the photoresist on the wafer w to initially strip the photoresist (S40) 〇 i As described above, the first source gas is supplied to peel off w w in the plasma state. The first body can be 氧°Γ gas can be oxygen (8) and nitrogen (10) or the efficiency of the ashing process. In addition, various gases may be used for photoresist, which: a variety of gases may be used to strip the wafer 1 : This is well understood by those skilled in the art. The second source f = f is opened to the first source when the opening of the portion is downwardly discharged from the second supply line 224a. The first plasma generated by the energy absorption from the microwave has a high energy level. The first plasma has a high energy level. 200820336 25718pif.doc 准 >1 and = to the first The second source gas on the flow path of the slurry is connected to the energy and the energy by means of the water transfer. _, generating a second plasma (S6〇) from the second source gas. 3D does not, the generated second plasma moves down the mountain through the diffusion pipe 280 through the flow direction of the first inflow hole - 244 Nightmare Gas, as mentioned in ^, due to the diffusion The pipe 280 is indicated by the symbol □) by the free radicals in the electric device (the two plasmas in the figure migrate to the top of the wafer W and the first M w map is not superimposed) by the baffle 290 . In the self-domain of the resistive shift and the photoresist on the wafer w, the two people are separated from the first resistance and the reaction by-product (S70). Wafer money county money stripped mentioned above, by discharge: the first ==== by using the first Thai will be λ 九版座土弟一电叙亚 and wrong gas can be 7; two wafer wjL residue or analog. The second source and there is a = (^°rine-based) gas (for example, cf4 or CHF3). Although the second embodiment of this embodiment =: the technical ρ Θ Θ 礼 ,, but the field is familiar with the second tester and easy See that you can use a variety of other gases. However, even a small amount of additional second source gas can cause the influence of 曰M W Bu and make it during the generation of electropolymerization; indirect discharge of the ΐ source gas. the reason. There are two indirect discharges to the younger brother-source. 2008 200826336 25718pif.doc The second source gas directly puts γ 26 G on the reaction with higher energy than the first source gas. The second plasma generated by the direct discharge has a pattern on the wafer w. When high energy is supplied to the wafer w, the gas is indirectly discharged when the gas is indirectly discharged. However, when the energy of the second plasma generated by the indirect discharge of the second source directly discharged is lower, the influence on the pattern is reduced. The source of the source gas is more reactive than the first. In order to solve the above problem, the inner tube 240 may be damaged. Indirect discharge to produce a second = external treatment of the second source gas after the inner 24G is treated. Using the == sheet date according to the present invention, Fig. 4A is an SEM photograph shown. After the processing of the day after the film W, as described above, the borrower is quite high energy. Thus, when the second j*: jin of the second plasma has ^ W; and the straw is produced by indirect discharge 纟Μ - : is depicted. However, the lower energy of the wafer is prevented from being separated according to the light on the raft. Further, it is suppressed that the substrate t-edge can be effectively peeled off despite the damage of the tube in the drawing ===:=. Ming, but not limited to this. It is obvious that the present invention departs from the scope and spirit of the present invention; it will be apparent to those skilled in the art that various substitutions, modifications, and changes can be made. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic diagram of a substrate processing method according to the present invention. Schematic diagram. 3D is the flow according to the present invention_substrate processing method
"，是顯錢用習知基板處理裝置處理基板之後的 大心的掃目田包子頭微鏡（SEM)照片，而圖是使用根 據本毛明的基板處理裝置處理基板之後的基板sem照片。 【主要元件符號說明】 1 :基板處理裝置 100 :處理室 102 :排氣孔 120 :卡盤", is a micro-mirror (SEM) photograph of the scorpion scorpion after the substrate is processed by the conventional substrate processing apparatus, and the sem photo of the substrate after the substrate is processed using the substrate processing apparatus according to the present invention . [Description of main component symbols] 1 : Substrate processing apparatus 100 : Processing chamber 102 : Vent hole 120 : Chuck
140 ··排氣線路 142 :排氣閥門 200 ·電聚供應單元 22〇 :電漿室 222 •弟一貫孔 222a :第一供應線路 222b :第一閥門 224 :第二流入孔 224a :第二供應線路 224b :第二閥門 16 200820336 25718pif.doc140 ··Exhaust line 142: Exhaust valve 200 · Electropolymer supply unit 22〇: Plasma chamber 222 • Younger hole 222a: First supply line 222b: First valve 224: Second inflow hole 224a: Second supply Line 224b: second valve 16 200820336 25718pif.doc
226 第二貫孔 240 内管 .242 放電空間 244 第一流入孔 260 放電1§ 262 微波振盪器 264 波導 280 擴散管道 290 擋板 292 貫孔226 second through hole 240 inner tube .242 discharge space 244 first inflow hole 260 discharge 1 § 262 microwave oscillator 264 waveguide 280 diffusion pipe 290 baffle 292 through hole