TW201730367A - Substrate processing apparatus, substrate processing method and substrate holding member - Google Patents

Abstract

A substrate processing apparatus includes a process chamber, and a turntable provided in the process chamber and including a substrate holding region formed in a top surface along a circumferential direction of the turntable. A surface area increasing region is provided in the top surface of the turntable around the substrate holding region and is configured to increase a surface area of the top surface of the turntable to an area larger than a surface area of a flat surface by including a concavo-convex pattern in its top surface. A process gas supply unit is configured to supply a process gas to the top surface of the turntable.

Description

Substrate processing apparatus, substrate processing method, and substrate holding member

The present invention relates to a substrate processing apparatus, a substrate processing method, and a substrate holding member.

Along with the miniaturization of the circuit pattern of the semiconductor element, various films constituting the semiconductor element are also required to be thinner and more uniform. As described in Japanese Laid-Open Patent Publication No. 2010-56470, the first reaction gas is supplied to the substrate, and the first reaction gas is adsorbed on the surface of the substrate, and then the first method is disclosed. (2) A so-called molecular layer film formation method (MLD, Molecular Layer Deposition) in which a reaction gas is supplied to a substrate and a first reaction gas adsorbed on the surface of the substrate is reacted with the second reaction gas to deposit a film composed of the reaction product on the substrate. Or ALD (Atomic Layer Deposition). According to the related film formation method, the reaction gas can be adsorbed to the surface of the substrate in a self-saturated manner, so that high film formation controllability, excellent uniformity, and excellent landfill characteristics can be achieved.

However, along with the miniaturization of the circuit pattern, for example, the trench or line in the trench structure is separated. space. The aspect ratio of the space in the pattern becomes large, and even in the molecular layer film formation method, it is difficult to fill the trench or the space.

For example, when a space having a width of about 30 nm is to be filled with a ruthenium oxide film, since the reaction gas hardly enters the bottom of the narrow space, the film thickness near the upper end portion of the side wall of the line where the space is partitioned becomes thick. On the other hand, the thickness of the film on the bottom side tends to be thin. Therefore, there is a case where a void is formed in the ruthenium oxide film which is buried in the space. When the ruthenium oxide film is etched in, for example, a subsequent etching step, an opening communicating with the void is formed on the ruthenium oxide film. Such as As a result, there is an etching gas (or etching liquid) from the opening into the cavity to cause contamination, or the metal is allowed to enter the cavity in the subsequent metallization, thereby causing defects.

The problem is not limited to the molecular layer film formation method, but also occurs in the chemical vapor deposition (CVD) method. For example, when a connection hole formed by a semiconductor substrate is filled with a conductive material to form a conductive connection hole (that is, a plug), a void may be formed in the plug. Therefore, as described in Japanese Laid-Open Patent Publication No. 2003-142484, in order to suppress the occurrence of the relevant voids, when the connection holes are filled with a conductive material, the connection holes are removed by eclipse by repeated etching. The outer edge of the conductive material formed on the upper portion protrudes from the shape portion to form a conductive connection hole (ie, a plug) in which the cavity is suppressed.

However, in the configuration described in Japanese Laid-Open Patent Publication No. 2003-142484, it is necessary to form a film and etch back of a conductive material film by a different device, and to transport the substrate between the devices or in each device. It takes time to stabilize the processing conditions, so there is a problem that the yield cannot be improved. In order to solve the problem, a film forming apparatus and a film forming method for performing a high-speed V-etching processing function in an in-situ on an ALD apparatus of a rotary table as disclosed in Japanese Laid-Open Patent Publication No. 2015-19075 are proposed.

According to the configuration described in Japanese Laid-Open Patent Publication No. 2015-19075, the occurrence of voids can be reduced in the concave portion formed by the substrate, and the filling can be performed at a high yield.

However, the recessed portion of the circuit pattern formed by the substrate is filled, and when the etching is further performed, when the shape of the recess is too complicated, since the surface area is significantly increased compared with the flat portion, the complexity of the circuit pattern is almost no The flat portion forming the circuit pattern causes a large difference in surface area. In such a case, when etching is performed after film formation, the surface area consumes a large amount of etching gas in a large area due to a load effect, and on the other hand, the etching gas is consumed in a flat portion having a small surface area. There will be less, but since the supply amount of the etching gas is almost uniform with respect to the entire surface of the substrate, the etching rate is lowered when the circuit pattern is complicated, and the etching rate is increased when the circuit pattern is simple. However, there is a case where the uniformity in the etching plane cannot be maintained well. Moreover, such a phenomenon is not only etched, but also occurs in all substrate processing in which a load effect occurs.

In addition, as described in Japanese Laid-Open Patent Publication No. 2015-173154, it is proposed to adjust the gas distribution in the vertical direction in the film forming process using the vertical heat treatment apparatus. The body distribution adjusting member is disposed above and below the boat, and seeks to improve the uniformity of the film forming process in the vertical direction. However, it is different from the film forming process and the etching process of the rotary table, and is difficult to apply to the rotary table. Substrate processing device.

Accordingly, it is an object of an embodiment of the present invention to provide a substrate processing apparatus and a substrate processing method which can maintain excellent in-plane uniformity even when a substrate having a pattern having an increased surface area is formed in a complicated manner. And a substrate holding member.

In order to achieve the above object, a substrate processing apparatus according to an aspect of the present invention has a processing chamber, and a rotating table is disposed in the processing chamber, and is provided with a recessed shape capable of holding the substrate in a plurality of surfaces along the peripheral direction. a substrate holding area; the surface area increasing area is disposed on the surface around the substrate holding area, and the surface area of the surface is increased by a flat surface by the formation of the concave-convex pattern; and the processing gas supply mechanism is capable of processing the gas It is supplied to the surface of the rotary table.

A substrate processing apparatus according to another aspect of the present invention includes: a processing chamber; a rotating table disposed in the processing chamber; and a recessed substrate mounting region that is disposed on the surface in a plurality of directions along the circumference of the rotating table. And the diameter of the substrate is larger than that of the substrate, and the substrate is not placed in contact with the inner peripheral surface to mount the substrate; and the substrate holding pin is provided with at least three or more inner circumferences away from the bottom surface of the substrate mounting region. a position of the surface, which is capable of maintaining the position of the substrate against centrifugal force caused by the rotation of the rotating table along the outer peripheral shape of the substrate; and a processing gas supply mechanism for supplying the processing gas to the rotating table surface.

According to another aspect of the present invention, in a substrate processing method, a substrate is held in a recessed substrate holding region provided on a rotating table in a processing chamber in a peripheral direction, and the rotating table is rotated and a processing gas is supplied thereto. a substrate processing method for processing a substrate, comprising: a step of rotating the turntable in a state in which a surface area increasing region in which a concave-convex pattern having a surface area is increased is formed around the substrate holding region; and allowing the rotation The stage rotates and supplies the processing gas to the substrate to process the substrate.

The substrate holding member according to another aspect of the present invention is to hold the substrate on the rotating table. a substrate holding member for holding a substrate processing device for processing the substrate, having an inner diameter and a thickness capable of holding the substrate, and having an outer shape and a bottom surface shape that can be placed on the substrate holding region; A ring shape having a concave-convex pattern in which a surface area is increased from a flat surface.

2a‧‧‧Rotary table

24a‧‧‧ recess

27‧‧‧ Surface area increase

Fig. 1 is a schematic cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention.

Fig. 2 is a schematic plan view showing a substrate processing apparatus according to an embodiment of the present invention.

3 is a partial cross-sectional view for explaining a separation region in a substrate processing apparatus according to an embodiment of the present invention.

Fig. 4 is a partial cross-sectional view showing another cross section of the substrate processing apparatus according to the embodiment of the present invention.

Fig. 5 is a partial cross-sectional view for explaining a third processing region P3 in the substrate processing apparatus according to the embodiment of the present invention.

Figure 6 is a plan view showing an example of the underside of the shower head.

FIG. 7 is a view showing an experimental result of a film forming process and an etching process in which a wafer of the same film is formed on the entire surface of the wafer W by a conventional substrate processing apparatus.

8 is a cross-sectional view showing a positional relationship between a concave portion of a turntable of a conventional substrate processing apparatus and a wafer.

FIG. 9 is a view showing an example of a positional relationship between a concave portion of a turntable and a wafer W of a substrate processing apparatus according to an embodiment of the present invention.

Fig. 10 is a view showing a measurement result of an etching rate in the X direction along the direction around the turntable.

Figure 11 is a graph showing the measurement results of the etching rate in the Y direction along the direction around the turntable.

Fig. 12 is a view showing an example of a substrate processing apparatus according to an embodiment of the present invention.

Fig. 13 is a view showing an example of a plane configuration of a rotary table of a substrate processing apparatus according to an embodiment of the present invention.

Fig. 14 is a perspective view showing an example in which a surface area increasing region is constituted by a ring member.

Fig. 15 is a cross-sectional view showing a state in which an annular member is placed on a turntable.

Figure 16 is a cross-sectional view showing an example of a ring member.

Fig. 17 is a view showing an example of a rotary table of a substrate processing apparatus according to an embodiment of the present invention.

Fig. 18 is a view showing the surface of the concave-convex pattern of the concave portion and the surface area increasing region.

Fig. 19 is a perspective view showing a concave-convex pattern of a concave portion and a surface area increasing region.

Fig. 20 is a view showing a change in the flow rate of CF ₄ in a conventional substrate processing apparatus in comparison with the film formed on a flat surface and the etching rate on the X-axis of the film formed on the patterned wafer.

Figure 21 is a diagram showing the etch rate of the film formed on the flat surface and the film formed on the patterned wafer on the X-axis in the conventional substrate processing apparatus by changing the rotational speed of the rotary table. .

Figure 22 is a diagram showing the etching rate of the film formed on a flat surface and the film formed on the patterned wafer on the X-axis in a conventional substrate processing apparatus by changing the pressure in the vacuum vessel. .

FIG. 23 is a view for explaining an experimental method of performing an etching process by providing a surface area increasing region at four places around the concave portion of the conventional substrate processing apparatus.

Figure 24 is a graph showing the experimental results of the pilot experiment shown in Figure 23 on the X-axis.

Figure 25 is a graph showing the experimental results of the pilot experiment shown in Figure 23 on the Y-axis.

Hereinafter, the description of the form for carrying out the invention will be made with reference to the drawings.

[First Embodiment]

A substrate processing apparatus according to a first embodiment of the present invention will be described. Fig. 1 is a schematic cross-sectional view showing a substrate processing apparatus according to a first embodiment of the present invention. Fig. 2 is a schematic plan view of a substrate processing apparatus according to a first embodiment of the present invention. 3 is a partial cross-sectional view for explaining a separation region in the substrate processing apparatus according to the first embodiment of the present invention. Figure 4 shows the first embodiment of the present invention. A partial cross-sectional view of another cross section of a substrate processing apparatus of a form.

As shown in FIGS. 1 and 2, the substrate processing apparatus according to the embodiment of the present invention includes a flat vacuum container 1 having a substantially circular planar shape, and a vacuum container 1 disposed therein, and having a center in the vacuum container 1 Rotating table 2 in the center of rotation. Further, the vacuum vessel 1 and the rotary table 2 are made of, for example, quartz.

The vacuum container 1 is a processing chamber for storing the wafer W therein to perform wafer processing. The vacuum container 1 has a container body 12 having a bottomed cylindrical shape, and a top plate 11 that is airtight and detachably disposed with respect to the upper surface of the container body 12 through a sealing member 13 such as an O-ring.

The turntable 2 is fixed to the cylindrical core portion 21 at the center portion, and the core portion 21 is fixed to the upper end of the rotary shaft 22 extending in the vertical direction. The rotating shaft 22 and the driving portion 23 are housed in a cylindrical casing 20 having an opening thereon. The flange portion on which the casing 20 is disposed is airtightly mounted under the bottom portion 14 of the vacuum vessel 1, and maintains an airtight state of the internal atmosphere of the casing 20 and the external atmosphere.

As shown in FIG. 2, the surface of the turntable 2 is provided with a semiconductor wafer (hereinafter referred to as "wafer W") which can be mounted in a plurality of (5 in the illustrated example) in the rotation direction (around direction). The concave portion 24 of the circular concave shape. Further, as an example of a wafer W-based substrate, various substrates can be used in addition to the semiconductor wafer. The concave portion 24 has a diameter sufficiently larger than the diameter of the wafer W, and the wafer W can be placed without the inner peripheral surface contacting the side surface of the wafer W. A plurality of wafer holding pins 25 are provided on the bottom surface of the recess 24 . Since the area of the concave portion 24 is sufficiently larger than the area of the wafer W, when the rotary table 2 is rotated, the wafer W cannot be held on the inner circumferential surface of the concave portion 24, and the wafer W is caused to fly from the concave portion 24. Out. Therefore, the holding of the wafer W is performed by the wafer holding pin 25. Therefore, the pin 25 is provided with at least three pieces separated from each other in such a manner as to be along the outer peripheral shape of the wafer W or in such a manner as to maintain the wafer W against the centrifugal force applied to the wafer W when the rotary table 2 rotates. the above. In the example of FIGS. 2 and 3, the six pins 25 are separated at equal intervals along the outer circumference of the wafer W, and are arranged to equally divide the outer circumference 6 of the wafer W. The pin 25 may be provided at any position in accordance with the use as long as it is provided at a position away from the inner peripheral surface of the recess 24 and is separated from the inner peripheral surface, but may be, for example, from the inner circumference of all the recesses 24 The manner of being equidistant is symmetric with respect to the center of the recess 24.

Further, the recess 24 has a depth almost equivalent to the thickness of the wafer W. Therefore, when the wafer W is placed on the concave portion 24, the surface of the wafer W and the surface of the turntable 2 (the region where the wafer W is not placed) have the same height. A region of the bottom surface of the recessed portion 24 that is located on the inner side of the wafer holding pin 25 is formed with a through hole 29 (see FIG. 17) through which, for example, three lift pins are inserted to support the inner surface of the wafer W to raise and lower the wafer W.

In the same manner, the substrate holding portion of the substrate processing apparatus according to the first embodiment of the present invention is configured by the recessed portion 24 and the pin 25. The details of the configuration and function of the recessed portion 24 and the pin 25 will be described in detail later, and the substrate processing is continued. Description of the device as a whole.

As shown in FIG. 2, the processing gas nozzles 31 and 32, the separation gas nozzles 41 and 42 and the etching gas supply unit 90 are disposed above the turntable 2. In the example shown in the drawing, the etching gas supply unit 90 and the separation gas nozzle are arranged in a clockwise direction (the rotation direction of the rotary table 2) from the transfer port 15 (described later) at intervals in the direction around the vacuum chamber 1. 41. The processing gas nozzle 31, the separation gas nozzle 42, and the processing gas nozzle 32. Further, the processing gas nozzle 31 is an example of a first processing gas supply unit, and the processing gas nozzle 32 is an example of a second processing gas supply unit.

Further, in the present embodiment, the substrate processing apparatus has an example in which not only the etching region but also the film formation region is described. However, the processing gas nozzles 31 and 32 provided in the film formation region may not be provided. Only the etching gas supply unit 90 or the etching gas supply unit 90 and the separation gas nozzles 41 and 42 provided in the etching region are provided. However, in the following embodiments, a substrate processing apparatus including both an etching region and a film formation region will be described as an example.

The processing gas nozzles 31 and 32 are fixed to the outer peripheral wall of the container main body 12 with the gas introduction ports 31a and 32a for the respective base end portions, and are introduced into the vacuum container 1 from the outer peripheral wall of the vacuum container 1. Then, the process gas nozzles 31, 32 are mounted to extend in parallel with respect to the turntable 2 in the radial direction of the container body 12.

The separation gas nozzles 41 and 42 are fixed to the outer peripheral wall of the container main body 12 with the gas introduction ports 41a and 42a for the respective base end portions, and are introduced into the vacuum container 1 from the outer peripheral wall of the vacuum container 1. Then, the separation gas nozzles 41, 42 are mounted to extend in parallel with respect to the rotary table 2 in the radial direction of the container body 12.

In addition, the details of the etching gas supply unit 90 will be described in detail later.

The processing gas nozzle 31 is made of, for example, quartz, and is connected to a Si-containing gas supply source (not shown) as a first processing gas through a pipe (not shown), a flow rate adjuster, or the like. The processing gas nozzle 32 is made of, for example, quartz, and is connected to an oxidizing gas supply source (not shown) as a second processing gas through a pipe (not shown), a flow rate adjuster, or the like. Each of the separation gas nozzles 41 and 42 is connected to a separation gas supply source (not shown) through a pipe (not shown), a flow rate adjustment valve, or the like.

For the Si-containing gas system, for example, an organic amino decane can be used, and for the oxidizing gas system, for example, an O ₃ (ozone) gas or an O ₂ (oxygen) gas can be used. As the separation gas system, for example, an Ar (argon) gas or a N ₂ (nitrogen) gas can be used.

The processing gas nozzles 31 and 32 are arranged along the longitudinal direction of the processing gas nozzles 31 and 32, and the plurality of gas ejection holes 33 that open toward the turntable 2 are arranged at intervals of, for example, 10 mm (see FIG. 3). As shown in FIG. 2, the lower region of the processing gas 31 serves as a first processing region P1 for adsorbing the Si-containing gas on the wafer W. The lower region of the processing gas nozzle 32 serves as a second processing region P2 for supplying an oxidizing gas for oxidizing the Si-containing gas adsorbed on the wafer W in the first processing region P1. Further, the lower region of the etching gas supply unit 90 serves as a third processing region P3 for supplying an etching gas for etching the reaction product deposited on the wafer W.

In addition, since the first processing region P1 is a region where the source gas is supplied to the wafer W, it may be referred to as a source gas supply region P1, and the second processing region P2 is a reaction product capable of generating a reaction with the source gas. The reaction gas is supplied to the region of the wafer W, and may be referred to as a reaction gas supply region P2. Further, since the third processing region is a region where the wafer W is subjected to an etching process, it may be referred to as an etching region P3.

As shown in FIGS. 2 and 3, the vacuum vessel 1 is provided with a convex portion 4 that protrudes from the inner surface of the top plate 11 toward the turntable 2. The convex portion 4 constitutes the separation region D together with the separation gas nozzles 41, 42. As shown in FIG. 2, the convex portion 4 has a fan-shaped planar shape in which the top portion is cut into an arc shape. Further, as shown in FIGS. 1 and 2, the inner arc of the convex portion 4 is connected to the protruding portion 5 (described later), and the outer arc is disposed along the inner circumferential surface of the container body 12 of the vacuum container 1.

3 is a cross section showing the vacuum vessel 1 from the process gas nozzle 31 to the process gas nozzle 32 and concentric along the turntable 2. As shown in FIG. 3, in the vacuum vessel 1, there is a flat lower first top surface 44 which is a lower surface of the convex portion 4 due to the convex portion 4, and both sides of the first top surface 44 in the circumferential direction. The second top surface 45 is higher than the first top surface 44.

As shown in FIG. 2, the first top surface 44 has a planar shape in which a top portion is cut into an arc shape. shape. Further, as shown in FIG. 3, the convex portion 4 is formed with a groove portion 43 formed to extend in the radial direction in the center in the peripheral direction, and the separation gas nozzle 42 is housed in the groove portion 43. The other convex portion 4 is also formed with the groove portion 43 in the same manner, and the separation gas nozzle 41 is housed in the groove portion 43. Further, the processing gas nozzles 31 and 32 are respectively disposed in a space below the upper second top surface 45. The processing gas nozzles 31 and 32 are separated from the second top surface 45 and placed in the vicinity of the wafer W. Further, as shown in FIG. 3, when viewed from the outer peripheral side of the turntable 2, the process gas nozzle 31 is disposed in the space 481 below the right side of the upper top surface 45, and the process gas nozzle 32 is disposed below the left side of the upper top surface 45. Space 482.

The first top surface 44 is formed as a separation space H of a narrow space with respect to the turntable 2. The separation space H separates the Si-containing gas from the first treatment region P1 and the oxidizing gas from the second region P2. Specifically, when the Ar gas is ejected from the separation gas nozzle 42, the Ar gas flows into the space 481 and the space 482 through the separation space H. At this time, since the Ar gas flows to the separation space H which is smaller than the spaces 481 and 482, the pressure of the separation space H can be made higher than the pressure of the spaces 481 and 482. That is, a pressure barrier is formed between the spaces 481 and 482. Further, the Ar gas flowing out from the separation space H toward the spaces 481 and 482 is operated as a reverse flow with respect to the Si-containing gas from the first processing region P1 and the oxidizing gas from the second region P2. Therefore, almost no Si-containing gas or oxidizing gas flows into the separation space H. Therefore, it is possible to suppress the reaction between the Si-containing gas and the oxidizing gas in the vacuum vessel 1.

On the other hand, as shown in FIG. 2, the top plate 11 is provided with a protruding portion 5 surrounding the outer periphery of the core portion 21 of the fixed turntable 2. In the present embodiment, the protruding portion 5 is continuous with the portion on the center of rotation of the convex portion 4, and the lower surface thereof is formed to have the same height as the first top surface 44.

In addition, in FIG. 2, in order to simplify description, the container main body 12 and the inside are displayed so that the container main body 12 may be cut in the position lower than the 2nd top surface 45 and the height of the isolation gas nozzles 41 and 42 is higher.

1 is a cross-sectional view taken along line II' of FIG. 2, and shows a region in which the second top surface 45 is provided. On the other hand, FIG. 4 shows an area in which the first top surface 44 is provided. Sectional view.

As shown in FIG. 4, the peripheral edge portion of the sector-shaped convex portion 4 (the portion on the outer edge side of the vacuum vessel 1) is formed with a curved portion 46 that is bent in an L-shape so as to face the outer end surface of the turntable 2. Similarly to the convex portion 4, the curved portion 46 suppresses intrusion of the processing gas from both sides of the separation region D, and suppresses mixing of the two processing gases. Since the fan-shaped convex portion 4 is disposed on the top plate 11 and can be detached from the container body 12 Since the top plate 11 has a slight gap between the outer peripheral surface of the curved portion 46 and the container body 12. The gap between the inner peripheral surface of the curved portion 46 and the outer end surface of the turntable 2, and the gap between the outer peripheral surface of the curved portion 46 and the container body 12 are set to, for example, the same size as the height of the first top surface 44 with respect to the surface of the turntable 2.

Although the inner peripheral wall of the container body 12 is formed as a vertical surface in the separation region D as shown in FIG. 4 and close to the outer circumferential surface of the curved portion 46, as shown in FIG. 1 outside the separation region D, for example, from the opposite direction A portion of the outer end surface of the rotary table 2 straddles to the bottom portion 14 and is recessed on the outward side. Hereinafter, in order to simplify the description, the depressed portion having a rectangular cross-sectional shape is referred to as an exhaust region E. Specifically, the exhaust region E that is connected to the first processing region P1 is denoted as the first exhaust region E1, and the exhaust region E that is connected to the second processing region P2 is denoted as the second exhaust region E2. The first exhaust port 61 and the second exhaust port 62 are formed in the bottoms of the first exhaust region E1 and the second exhaust region E2, respectively. As shown in FIG. 1 , the first exhaust port 61 and the second exhaust port 62 are respectively connected to a vacuum pump 64 that is a vacuum exhaust mechanism through the exhaust pipe 63 . Further, a pressure adjusting mechanism 65 is provided in the exhaust pipe 63 between the exhaust port 61 and the vacuum pump 64.

The space between the rotary table 2 and the bottom 14 of the vacuum vessel 1 is as shown in Figs. 1 and 4, and the heater unit 7 as a heating mechanism can be disposed, and the wafer on the rotary table 2 can be transmitted through the rotary table 2. W is heated to the temperature determined by the formula. In order to suppress the intrusion of gas into the lower region of the turntable 2, the lower side of the periphery of the turntable 2 is provided with an annular covering member 71. The covering member 71 divides the atmosphere from the space above the turntable 2 to the exhaust regions E1 and E2 and the atmosphere in which the heater unit 7 is placed.

The cover member 71 is provided with an inner member 71a provided to face the outer edge portion of the turntable 2 from the lower side and the outer peripheral side of the outer edge portion, and the inner member 71a and the inner wall surface of the vacuum container 1 The outer member 71b is between. The outer member 71b is disposed below the curved portion 46 formed by the outer edge portion of the convex portion 4 in the separation region D, and is disposed close to the curved portion 46. The inner member 71a surrounds the heater unit 7 across the entire circumference of the lower portion of the turntable 2 (and slightly below the outer portion of the outer edge portion).

The bottom portion 14 of the portion on the rotation center side of the space in which the heater unit 7 is disposed protrudes upward toward the core portion 21 in the vicinity of the center portion of the lower surface of the turntable 2 to become the protruding portion 12a. A narrow space is formed between the protruding portion 12a and the core portion 21, and a gap between the inner peripheral surface of the through hole passing through the rotating shaft 22 of the bottom portion 14 and the rotating shaft 22 is narrowed, and the narrow space is narrowed. It will be connected to the housing 20. Then, the casing 20 is provided with a flushing gas supply pipe 72 for supplying the Ar gas which is a flushing gas into the narrow space.

Further, the bottom portion 14 of the vacuum vessel 1 is provided with a plurality of flushing gas supply pipes 73 for flushing the arrangement space of the heater unit 7 at a predetermined angular interval in the peripheral direction below the heater unit 7 (Fig. 4 shows one The purge gas supply pipe 73). Further, between the heater unit 7 and the turntable 2, in order to suppress the intrusion of gas into the region where the heater unit 7 is provided, the inner peripheral wall (the upper surface of the inner member 71a) of the outer member 71b is provided to be covered across the peripheral direction. A cover member 7a between the upper end portion of the protruding portion 12a. The cover member 7a can be made, for example, of quartz.

Further, a separation gas supply pipe 51 is connected to the center portion of the top plate 11 of the vacuum vessel 1, and Ar gas of the separation gas is supplied to the space 52 between the top plate 11 and the core portion 21. The separation gas supplied to the space 52 is transmitted through the narrow space 50 of the turntable 2 and the rotating table 2, and is discharged toward the periphery along the wafer mounting region side surface of the turntable 2. The space 50 can maintain a higher pressure than the space 481 and the space 482 by separating the gas. Therefore, it is possible to suppress the SiO containing gas supplied to the first processing region P1 and the oxidizing gas supplied to the second processing region P2 from being mixed by the central region C by the space 50. That is, the space 50 (or the center area C) may have the same function as the separation space H (or the separation area D).

Further, as shown in FIG. 2, the side wall of the vacuum chamber 1 is formed with a transfer port 15 for receiving the wafer W of the substrate between the external transfer arm 10 and the turntable 2. The transfer port 15 is opened and closed by a gate valve (not shown). Further, the concave portion 24 of the turntable 2 in the wafer mounting region performs the wafer W with the transfer arm 10 at a position facing the transfer port 15. Therefore, the lower part of the turntable 2 is provided at a portion corresponding to the receiving position, and a lifting pin for lifting the wafer W from the inner surface is provided in a region penetrating the inner side of the pin 25 of the recessed portion 24 and Lifting mechanism (all not shown).

Next, the etching gas supply unit 90 will be described with reference to FIGS. 2, 5, and 6. FIG. 5 is a partial cross-sectional view showing a third processing region P3 of the substrate processing apparatus according to the first embodiment of the present invention.

The etching gas supply unit 90 is disposed on the turntable 2 in the third processing region (etching region) P3. The etching gas supply unit 90 supplies the activated fluorine-containing gas to the film formed on the wafer W, and etches the film. As shown in FIGS. 2 and 5, the etching gas supply unit 90 includes a plasma generating unit 91, The etching gas supply pipe 92, the shower head 93, the pipe 94, and the hydrogen-containing gas supply unit 96 are provided. Further, the shower head 93 is an example of an etching gas discharge portion, and for example, an etching gas nozzle may be used instead of the shower head 93.

The plasma generating unit 91 activates the fluorine-containing gas supplied from the etching gas supply pipe 92 by the plasma source. The plasma source is not particularly limited as long as it can form an F (fluorine) radical by activating the fluorine-containing gas. As the plasma source, for example, Inductively Coupled Plasma (ICP), Capacitively Coupled Plasma (CCP), and Surface Wave Plasma (SWP) can be used.

The etching gas supply pipe 92 is connected to the plasma generating portion 91 at one end thereof, and supplies the fluorine-containing gas to the plasma generating portion 91. The other end of the etching gas supply pipe 92 is connected to an etching gas supply source storing the fluorine-containing gas through, for example, an opening and closing valve and a flow rate adjuster. As the fluorine-containing gas system, a gas capable of etching a film formed by the wafer W can be used. Specifically, a fluorocarbon such as CHF ₃ (trifluoromethane), a fluorinated carbon such as CF ₄ (carbon tetrafluoride), or the like, and a fluorine-containing gas which etches the ruthenium oxide film can be used. Further, Ar gas, O ₂ gas or the like may be appropriately added to the fluorine-containing gas.

The shower head 93 is connected to the plasma generating unit 91 through the pipe 94, and is a portion that supplies the fluorine-containing gas activated by the plasma generating unit 91 to the inside of the vacuum container 1. The shower head 93 has a fan-shaped planar shape and is pressed toward the lower side by the pressing member 95 formed along the outer edge of the sector-shaped planar shape. Moreover, by fixing the pressing member 95 to the top plate 11 by a plug or the like (not shown), the internal atmosphere of the vacuum container 1 can be made airtight. The distance between the lower surface of the shower head 93 fixed to the top plate 11 and the upper surface of the rotary table 2 may be, for example, about 0.5 mm to 5 mm, and the lower portion of the shower head 93 may be, for example, a third process for etching the tantalum oxide film. Area P3. Thereby, the F radicals contained in the activated fluorine-containing gas supplied into the vacuum vessel 1 through the shower head 93 are efficiently reacted with the film formed by the wafer W.

The shower head 93 is provided with a plurality of gas ejection holes 93a so as to have a smaller number of rotation centers than the difference in the angular velocity of the turntable 2, and a large number of outer peripheral sides. The number of the plurality of gas ejection holes 93a may be, for example, several tens to several hundreds. Further, the diameter of the plurality of gas ejection holes 93a may be, for example, from about 0.5 mm to about 3 mm. The activated fluorine-containing gas supplied from the shower head 93 is supplied to the space between the turntable 2 and the shower head 93 through the gas discharge hole 93a.

However, even if the gas ejection holes 93a are arranged in a large number of ways on the outer peripheral side, the etching rate is still There is a tendency that the outer peripheral side is greatly lowered from the center side, and only the ratio of the gas ejection holes 93a on the outer peripheral side is increased from the center side, and the etching rate is not effectively prevented from being lowered. In general, in the case of the film forming treatment, as long as the ratio of the gas ejection holes is increased in a predetermined region and the supply ratio of the gas is increased, the deposition rate in the predetermined region can be increased. However, in the case of the etching treatment, even if the supply ratio of the etching gas is increased, it is not always associated with an increase in the etching rate. This should not be the supply speed control, but the reaction speed control. That is, even if the etching gas is sufficiently supplied, if the etching reaction conditions are not uniform, a sufficient etching rate cannot be obtained. The so-called etching reaction conditions represent a state in which sufficient etching reaction energy is present, and in the case of high pressure and high temperature, the etching reaction energy can be maintained high.

Therefore, in the substrate processing apparatus according to the present embodiment, the lower protruding surface 93c that protrudes downward is provided on the outer peripheral portion of the shower head portion 93, and the pressure at the outer peripheral portion of the etching preventing region P3 is prevented from being lowered. The lower protruding surface 93c is disposed on the outer side of the outer edge of the concave portion 24 of the turntable 2 so as to face the outer peripheral portion of the turntable 2. The lower protruding surface 93c forms a narrow interval d2 narrower than the interval d1 between the inner region of the lower surface 93b of the shower head 93 and the rotary table 2 at the outer peripheral portion to prevent the etching gas ejected from the gas ejection hole 93a from going to the outer peripheral portion. Escape outside. Then, the pressure drop on the outer peripheral side of the etching region P3 can be prevented, and the decrease in the etching reaction energy on the outer peripheral side of the etching region P3 can be prevented. Thereby, it is possible to prevent the etching rate of the outer peripheral portion in the etching region P3 from being lowered, and to obtain an overall uniform etching rate in the etching region P3.

Further, in order to sufficiently ensure a region of the narrow interval d2 formed between the lower protruding surface 93c and the surface of the turntable 2 in the radial direction, the outer peripheral portion of the turntable 2 may be enlarged as compared with the normal rotary table 2. In other words, the outer region may be enlarged from the concave portion 24 of the turntable 2 to enlarge the diameter of the rotary table 2. This is because even if the pitch and the gap which form the narrow interval d2 are provided, when the path for maintaining the narrow interval d2 is too short, sufficient effect of preventing the outflow of the etching gas and increasing the pressure on the outer peripheral side cannot be obtained. Fig. 5 is a view showing an example in which the outer peripheral portion of the turntable 2 is slightly enlarged.

Further, as long as the interval d1 between the lower surface 93b of the shower head 93 and the turntable 2 and the narrow interval d2 between the lower protruding surface 93c and the turntable 2 are 0 < d2 < d1, it is possible to correspond to the use. Set to various values.

Further, the lower protruding surface 93c may be configured to mount the plate member under the flat shower head 93 The surface of the shower head 93 may be formed as a partial component, and may be processed from the beginning to have a shape in which the outer peripheral portion has the lower protruding surface 93c.

Fig. 6 is a plan view showing an example of the underside of the shower head 93. As shown in FIG. 6, the lower protruding surface 93c may be provided in a strip shape along the outer circumference of the lower surface 93b of the fan-shaped shower head 93. Thereby, the pressure drop on the outer peripheral side of the etching region P3 can be uniformly prevented in the peripheral direction. Further, the gas ejection hole 93a may be provided to extend in the radial direction at the center in the direction around the lower surface 93b of the shower head 93. Thereby, the etching gas can be supplied from the center side of the turntable 2 to the outer peripheral side.

Return to the description of Figure 5. The piping 94 is provided on the upstream side of the shower head 93 to connect the plasma generating portion 91 and the shower head 93. A hydrogen-containing gas supply unit 96 is provided on the outer peripheral side of the pipe 94 in the radial direction of the turntable 2 .

The hydrogen-containing gas supply unit 96 is connected to the pipe 94 at one end thereof, and supplies a hydrogen-containing gas to the inside of the pipe 94. The other end of the hydrogen-containing gas supply unit 96 is connected to the hydrogen-containing gas supply source through, for example, an on-off valve and a flow rate adjuster.

As the hydrogen-containing system, for example, a mixed gas of H ₂ (hydrogen) gas and Ar gas (hereinafter referred to as "H ₂ /Ar gas") can be used. Further, the H ₂ gas supply flow rate may be, for example, 1 sccm or more and 50 sccm or less, and the Ar gas supply flow rate may be, for example, 500 sccm or more and 10 slm or less.

In the example of FIG. 5, one hydrogen-containing gas supply unit 96 is provided on the outer peripheral side of the pipe 94 in the radial direction of the turntable 2, but the present invention is not limited thereto. For example, the hydrogen-containing gas supply unit 96 may be provided in front of or behind the piping 94 in the rotation direction of the turntable 2 . Further, a plurality of hydrogen-containing gas supply portions 96 may be provided in the pipe 94.

Further, as shown in FIG. 1, the substrate processing apparatus is provided with a control unit 100 including a computer for controlling the overall operation of the apparatus. The memory of the control unit 100 stores a program for causing the substrate processing apparatus to perform the following substrate processing method under the control of the control unit 100. This program is formed into a step group by performing the following device operations, and is installed in the control unit 100 from the memory unit 101 such as a hard disk, a compact disk, a magneto-optical disk, a memory card, or a floppy disk.

Next, the concave portion 24 and the pin 25 of the substrate holding portion of the substrate processing apparatus according to the first embodiment of the present invention will be described in more detail with reference to the experimental results.

7 is a view showing an experimental result of a case where a conventional film is formed on a whole surface of a wafer W by a conventional substrate processing apparatus, that is, a hard film of a hard film is subjected to a film formation process and an etching process. formula.

In Fig. 7, the deposition rate and the etching rate in the X direction along the circumferential direction of the turntable 2 are shown. In addition, in FIG. 7, the horizontal axis represents the coordinate (mm) on the wafer W in the X direction, and the vertical axis represents the deposition rate and the etching rate (both nm/min). Again, curve A is the deposition rate and curve B is the etch rate.

Further, the etching conditions were such that the pressure in the vacuum vessel 1 was 1.3 Torr, the rotational speed of the rotary table 2 was 60 rpm, and the flow rate of Ar/CF ₄ /O ₂ was 5000/10/100 sccm. Further, the flow rate of H ₂ /H ₂ -Ar is 0/2000 sccm.

As shown in Fig. 7, it is found that the curve A indicating the deposition rate is slightly uniform on all coordinates on the X-axis, and good in-plane uniformity is obtained. On the other hand, the curve B indicating the etching rate is larger than the central region, and the etching rates at both end portions are largely lowered. As described above, it has been found that in the conventional substrate processing apparatus, the etching rate of the edge portion of the wafer W is remarkably lowered.

8 is a cross-sectional view showing the positional relationship between the concave portion 124 of the turntable 120 of the conventional substrate processing apparatus and the wafer W. As shown in FIG. 8, since the concave portion 124 of the conventional substrate processing apparatus has the function of holding the side surface of the wafer W, the inner peripheral surface is close to the end (edge) of the wafer W. In this case, the etching gas is only supplied to the surface of the wafer W in the central region of the wafer W, and in the edge portion of the wafer W, the etching gas is not only at the edge portion of the wafer W, but also It is supplied to the bottom surface and the inner circumferential surface of the recessed portion 24. As a result, the etching gas is not only applied to the edge portion of the wafer W but also to the bottom surface and the inner peripheral surface of the recess portion 24 due to the load effect of the etching gas. Since the flow rate of the etching gas is slightly fixed regardless of the position of the wafer W, all of the etching gas is used for etching the film in the central region of the wafer W, and in the concave portion 24 in the edge portion. Both the bottom surface and the inner peripheral surface are additionally consumed, so that the amount of etching gas used for etching at the edge portion of the wafer W is lowered. Because of the associated loading effect, as shown in FIG. 7, the etching rate at the edge portion of the wafer W is lower than that of the central portion.

FIG. 9 is a view showing an example of the positional relationship between the concave portion 24 of the turntable 2 and the wafer W in the substrate processing apparatus according to the first embodiment of the present invention.

As shown in FIG. 9, the inner diameter of the recess 24 is sufficiently larger than the outer diameter of the wafer W, so that a large distance is maintained between the inner circumferential surface of the recess 24 and the side surface of the wafer W. Then, the wafer W is held by the pin 25 at the center of the recess 24. If etching is performed in the relevant state, due to the edge portion of the wafer W The inner peripheral surface of the recess 24 is largely separated, so that the influence of the load effect is almost eliminated, and the etching rate is the same as that of the central portion. Thereby, the in-plane uniformity of the etching rate of the film on the wafer W can be improved.

In addition, the substrate processing apparatus according to the first embodiment of the present invention can suppress the occurrence of a load effect and improve the substrate processing in accordance with the substrate processing apparatus according to the first embodiment of the present invention. Uniformity in the plane. For example, it can be similarly applied to a film formation process, and is particularly effective for CVD film formation which is likely to cause a load effect.

As described above, according to the substrate processing apparatus according to the first embodiment of the present invention, it is possible to improve the in-plane uniformity of the etching process and to improve various other substrate processing when the film formed on the wafer W is formed with a small number of etching patterns. In-plane uniformity of the treatment.

[Second Embodiment] <Substrate processing device>

Next, a substrate processing apparatus according to a second embodiment of the present invention will be described. In the second embodiment, the differences from the first embodiment will be mainly described, and the same or similar points as those of the first embodiment will be simplified or omitted.

FIG. 10 and FIG. 11 are diagrams showing experimental results of a case where a film is formed on the surface of a wafer W on which a concave-convex pattern of a groove or a hole is formed on the surface, and a film is etched using a conventional substrate processing apparatus. . Fig. 10 is a view showing the measurement results of the etching rate in the X direction along the circumferential direction of the turntable. Fig. 11 is a view showing measurement results of the etching rate in the Y direction along the circumferential direction of the turntable.

In Figs. 10 and 11, the horizontal axis represents the coordinates (mm) of the measurement points on the X-axis and the Y-axis, and the vertical axis represents the etching rate (nm/min). Further, the curves Jx and Jy indicate the etching rate of the bare wafer having a flat surface without forming a concave-convex pattern on the surface of the wafer W, and the curves Kx and Ky indicate that a concave-convex pattern having a surface area of 3 times that of the flat surface of the bare wafer is formed. The etch rate of the wafer W. Further, the curve lines Lx and Ly represent the etching rate of the wafer W on which the concave-convex pattern having the surface area of 5 times of the flat surface of the bare wafer is formed, and the curve lines Mx and My indicate that the surface area of the flat surface of the bare wafer is formed 10 times. The etching rate of the wafer W of the concavo-convex pattern. Further, the curve lines Nx and Ny represent the etching rate of the wafer W on which the concave-convex pattern having the surface area of 30 times of the flat surface of the bare wafer is formed.

Further, the etching conditions were such that the vacuum vessel pressure was 1.3 Torr and the rotational speed of the rotary table was 60 rpm. The flow rate of Ar/CF ₄ /O ₂ is 5000/10/100 sccm, and the flow rate of H ₂ /H ₂ -Ar is 0/2000 sccm. The flow rate of the Ar gas of the separation gas is supplied to the three gas nozzles in the vicinity of the shaft, the intermediate portion, and the outer peripheral portion by using the separation gas, and is supplied to the vicinity of the shaft at 200 sccm, and is supplied to the intermediate portion at 500 sccm (separation gas nozzle). It is supplied to the outer peripheral portion at 200 sccm.

As shown in FIG. 10, it is found that in the X-axis direction, as the surface area is increased due to the formation of the concavo-convex pattern, the etching rate is lowered. Moreover, it is known that the etching amount of the central region is largely lowered as compared with the end portion of the wafer W, and as the surface area is increased by the concave-convex pattern, the difference in etching rate between the end portion and the central portion becomes larger, so that the surface is made larger. Internal uniformity deteriorates. That is, in the curve Jx of the bare wafer, although the etching rate is high and the in-plane uniformity is good, both the etching rate and the in-plane uniformity have a curve Kx of about 3 times the surface area, and the surface area is 5 times. The curve Lx, the surface area is 10 times the curve Mx, and the surface area is 30 times the order of the curve Nx is decreased. In addition, the uniformity in the X-axis direction is 4.5% for bare wafers, 6.1% for wafers with 3 times surface area, 17% for wafers with 5 times surface area, and 45% for wafers with 10 times surface area. The wafer with a surface area of 30 times is 44%.

Moreover, the same tendency is also shown in FIG. 11. In the curve Jy of the bare wafer, although the etching rate is high and the in-plane uniformity is good, both the etching rate and the in-plane uniformity are approximately three times the surface area. The curve Ky, the surface area is 5 times the curve Ly, the surface area is 10 times the curve My, and the surface area is 30 times the curve Ny is decreased. In addition, the uniformity in the Y-axis direction is 4.2% for bare wafers, 10% for wafers with 3 times surface area, 19% for wafers with 5 times surface area, and 41% for wafers with 10 times surface area. The wafer with a surface area of 30 times is 40%.

As described above, a load effect is also generated in the case of etching a film formed on the wafer W on which the uneven pattern is formed, and the larger the surface area, the more the etching gas is consumed, and the etching rate is lowered. Moreover, since the concave-convex pattern is formed in the central portion of the wafer W and is simple or not formed at the edge portion, the etching gas is consumed in the central region, so that the etching rate is lower than that of the edge portion. .

In the substrate processing apparatus according to the second embodiment of the present invention, the surface area increasing region having the complicated concave-convex pattern is provided around the edge portion of the wafer W in which only the simple uneven pattern is formed, so as to maintain and form complicated irregularities. The balance of the surface area of the central region of the patterned wafer W.

Fig. 12 is a view showing an example of a substrate processing apparatus according to a second embodiment of the present invention. First 2 The substrate processing apparatus according to the embodiment is provided with a surface area increasing region 27 in which a concave-convex pattern is formed on a flat surface outside the concave portion 24a of the turntable 2a. Thereby, the surface area of the central region of the wafer W can be made slightly the same, and the unevenness of the etching rate due to the load effect can be corrected.

FIG. 13 is a view showing an example of a planar configuration of the turntable 2a of the substrate processing apparatus according to the second embodiment of the present invention. In Fig. 13, it is shown that the concave portion 24a is formed in five on the surface of the turntable 2a, and the periphery of the concave portion 24a is surrounded by the annular surface area increasing region 27. In this manner, the outer surface of each recess 24a may be surrounded by the annular surface area increasing portion 27. Thereby, the vicinity of the edge portion of the wafer W having a small number of concave-convex patterns can have the same surface area as the complex concave-convex pattern of the central portion by the surface area increasing region 27, and the etching rate can be uniformized.

FIG. 14 is a perspective view showing an example in which the surface area increasing region 27 is constituted by the annular member 28. As shown in FIG. 14, the annular member 28 is provided along the outer circumference of the recess 24a, and a surface area increasing region 27 is formed on the surface of the annular member 28. Specifically, the surface area increasing region 27 is formed by a groove-like concave-convex pattern. The annular member 28 can be constructed of various materials, for example, by quartz. Since the turntable 2 is configured by quartz, it is suitable to form the recess 24a. Further, in the case of etching a tantalum film (such as a polyimide film), the compatibility with the object to be etched may be considered, and it may be configured by ruthenium.

Fig. 15 is a cross-sectional view showing a state in which the ring member 28 is provided on the turntable 2a. As shown in Fig. 15, the turntable 2a has an annular recess 26 having an inner circumferential diameter larger than the diameter of the recess 24a, and the annular member 28 is embedded in a shape along the recess 26. The annular member 28 can also be easily disposed toward the installation recess 26 so that the bottom surface or the side surface (the contact surface with the installation recess 26) has a fastening structure portion 28a that is engaged with the shape of the recess 36.

The surface area increasing region 27 composed of the concave-convex pattern is formed on the surface of the annular member 28, and as long as it is provided in the recess 26, the unevenness of the concave-convex pattern formed at the central portion of the wafer W can be easily maintained. Further, the uneven pattern may be various patterns depending on the application, but may be, for example, a pattern in which a plurality of parallel grooves are formed on a flat surface.

Further, the concave portion 24a may have an outer circumferential groove 24b on the outer circumferential side, or a dike (protruding portion) 24c may be formed on the outer side of the outer circumferential groove 24b. Since the outer circumferential groove 24b reduces the contact with the quartz (the inner circumferential surface of the concave portion 24a) at the edge portion of the wafer W, and suppresses the generation of particles, it is provided as needed. Further, the embankment 24c constitutes the inner peripheral surface of the recess 24a, and receives the separation due to the rotation of the rotary table 2a. The core force is moved to the outer peripheral portion of the wafer W in the recess 24a to hold the wafer W in the recess 24a. Further, the bank 24c is not necessarily provided, and the recess 26 may be formed continuously with the recess 24a to form a large recess 24a, and the annular member 28 may be provided at the outer peripheral portion thereof, and the annular member 28 may be provided in the annular member 28. A concave portion 24a is formed in the circumference. In this case, the inner peripheral surface of the annular member 28 has the function of the substrate holding region. That is, the inner peripheral surface of the annular member 28 has an inner diameter slightly larger than the outer diameter of the wafer W, and has a function of holding the side surface of the wafer W.

Further, the width and thickness of the annular member 28 in the radial direction can be various values depending on the application, and the thickness is, for example, 4 to 6 mm, and preferably 5 mm. Further, the width of the embankment 24c may be an appropriate value depending on the application, and is, for example, 1 to 3 mm, or preferably 2 mm. The outer circumferential groove 24 may also have an appropriate width and depth depending on the application.

Further, the annular member 28 can be sufficiently fixed as long as it is placed on the installation recess 26. When the film forming process is performed in a state where the annular member 28 is placed on the installation recess 26, since the annular member 28 is fixed to be attached to the recess 26, adhesion, bonding, and the like are not required. Fixed.

In addition, the annular member 28 may have a structure in which the entire shape is divided into a plurality of pieces in the peripheral direction and the entire shape is a ring shape. It is particularly convenient to set the surface area increase amount of the concave-convex pattern to be different depending on the area, and a more compact surface area adjustment can be performed.

Figure 16 is a cross-sectional view showing an example of the annular member 28. As shown in Fig. 16, the concavo-convex pattern constituting the surface area increasing region 27 can be obtained by forming the plurality of grooves 27 which are parallel to each other by the flat faces. The concavo-convex pattern may be configured in various patterns, and may be formed by forming parallel multi-channel grooves 27a on a flat surface, for example. By appropriately adjusting the width of the groove 27a and the same pitch, depth, and the like of the groove 27a, it is possible to adjust the uneven pattern having a surface area several times that of the flat surface. Further, in the case where the surface area of the center side and the outer circumference side of the turntable 2a is to be different, the above adjustment can be performed. For example, the annular member 28 may be divided into a plurality of sheets, and the surface areas of the sheets may be different, and they may be combined and arranged to be appropriately arranged in accordance with a program.

In addition, the surface area increase rate of the uneven pattern by the surface area increasing area 27 may be variously set as long as it can be used depending on the application, and can be set, for example, in the range of 2 to 30 times the surface area of the flat surface, in accordance with an appropriate use.

As described above, according to the substrate processing apparatus according to the second embodiment, even if the formation is complicated When the wafer W of the concavo-convex pattern is applied to the substrate, the load effect of the supplied processing gas can be suppressed, and the in-plane uniformity of the substrate processing can be improved.

In addition, the substrate processing apparatus according to the second embodiment is the first embodiment except for the configuration of the turntable 2a, the configuration of the recesses 24a and 26, and the point where the annular member 28 including the surface area increasing region 27 is provided. Since the configuration of the substrate processing apparatus according to the form is the same, the description thereof will be omitted.

<Substrate processing method>

Next, an example of a substrate processing method of the substrate processing apparatus according to the second embodiment of the present invention will be described. Hereinafter, a method of forming an SiO ₂ film in a hole formed in one concave pattern on the wafer W will be described as an example. In the following description, reference is made to FIGS. 1 to 6 used for the description of the substrate processing apparatus according to the first embodiment, and in the following description, it is desirable to be able to turn the "rotating table 2" in FIGS. 1 to 6. The "recessed portion 24" is appropriately replaced with the "rotating table 2a" and the "recessed portion 24a".

In the following embodiments, a Si-containing gas is used as the first processing gas, and an oxidizing gas is used as the second processing gas, and a mixed gas of CF ₄ and Ar gas and O ₂ gas (hereinafter referred to as "CF" is used. _{The case of 4} / Ar / O ₂ gas ") as a fluorine-containing gas will be described as an example.

First, a gate valve (not shown) is opened, and as shown in FIG. 2, the wafer W is conveyed from the outside through the transfer arm 10 and through the transfer port 15 to the region in the pin 25 of the concave portion 24a of the turntable 2a. When the concave portion 24a is stopped at the position facing the transfer port 15, the transfer is performed by moving the lift pin (not shown) from the bottom side of the vacuum container 1 through the through hole (see FIG. 17) of the bottom surface of the recess 24a. The turntable 2a is intermittently rotated to perform the transfer of the wafer W so that each wafer W is placed in the five recesses 24a of the turntable 2a. On the surface of the wafer W, a concave-convex pattern formed by grooves, holes, and the like which greatly increase the surface area of the flat surface is formed. The annular member 28 having the surface area increasing region 27 having an appropriate surface area increase amount formed on the surface by the complexity of the concave-convex pattern formed on the surface of the wafer W, that is, the degree of increase in the surface area, is provided in the setting recess 26 To form the recess 24a.

Then, the gate valve is closed, and the inside of the vacuum vessel 1 is evacuated by the vacuum pump 64, and then the Ar gas of the separation gas is discharged from the separation gas nozzles 41 and 42 at a predetermined flow rate, and the separation gas supply pipe 51 is flushed. The gas supply pipe 72 discharges Ar gas at a predetermined flow rate. Along with this, the inside of the vacuum vessel 1 is adjusted to a predetermined processing pressure by the pressure adjusting mechanism 65. Then, The rotary table 2a is rotated clockwise and at a rotational speed of, for example, 60 rpm, and the wafer W is heated by the heater unit 7 to, for example, 450 °C.

Next, a film forming process is performed. In the film forming step, the Si-containing gas is supplied from the processing gas nozzle 31, and the oxidizing gas is supplied from the processing gas nozzle 32. Further, no gas is supplied from the etching gas supply unit 90.

When the wafer W passes through the first processing region P1, the Si-containing gas of the source gas is supplied from the processing gas nozzle 31 and adsorbed on the surface of the wafer W. The wafer W on which the Si-containing gas is adsorbed on the surface is washed by the separation region D having the separation gas nozzle 42 by the rotation of the turntable 2a, and then enters the second processing region P2. In the second processing region P2, oxidizing gas is supplied from the processing gas nozzle 32, and the Si component contained in the Si-containing gas is oxidized by the oxidizing gas, and SiO _{2 which} is a reaction product is deposited on the surface of the wafer W.

The wafer W that has passed through the second processing region P2 is flushed by the separation region D having the separation gas nozzle 41, and then enters the first processing region P1 again. Then, the Si-containing gas is supplied from the processing gas nozzle 31 to adsorb the Si-containing gas on the surface of the wafer W.

As described above, the turntable 2a is continuously rotated a plurality of times, and the first process gas and the second process gas are supplied into the vacuum vessel 1, without supplying the fluorine-containing gas into the vacuum vessel 1. Thereby, SiO ₂ which is a reaction product is deposited on the surface of the wafer W to form a SiO ₂ film (antimony oxide film).

If the SiO ₂ film is formed to a predetermined film thickness as needed, the supply of the Si-containing gas from the processing gas nozzle 31 is stopped, and the oxidizing gas is continuously supplied from the processing gas nozzle 32, and the rotating table 2a is continuously rotated. Modification of SiO ₂ film.

By performing a film forming process, an SiO ₂ film is formed in a hole of one concave pattern. The SiO ₂ film formed first in the pores has a cross-sectional shape along the concave shape.

Next, an etching process is performed. In the etching process, the SiO ₂ film is etched into a V-shaped cross-sectional shape. The etching process is specifically carried out as follows.

As shown in FIG. 2, the supply of the Si-containing gas and the oxidizing gas from the processing gas nozzles 31 and 32 is stopped, and the Ar gas is supplied as a flushing gas. The rotary table 2a is set to a temperature suitable for etching, for example, about 600 °C. Further, the rotational speed of the rotary table 2a is set to, for example, 60 rpm. In this state, the CF ₄ /Ar/O ₂ gas is supplied from the shower head 93 of the etching gas supply unit 90, and the H ₂ /Ar gas of a predetermined flow rate is supplied from the hydrogen-containing gas supply unit 96, for example. To start the etching process.

At this time, since the turntable 2a is rotated at a low speed, the SiO ₂ film is etched into a V-shaped cross-sectional shape. The hole by etching the SiO ₂ film is V-shaped, the SiO ₂ film can be formed on the upper most wide opening hole, and when the next film formation can be filled to the bottom of the SiO ₂ film, and It is possible to perform film formation with high bottom-up property and difficulty in generating voids.

At this time, even if a large number of irregular concavo-convex patterns having a large surface area and a large surface area are formed on the surface of the wafer W, the surface area increasing region 27 of the annular member 28 can be formed corresponding to the pattern, and The arrangement is such that the wafer W is surrounded from the periphery around the wafer W, so that the etching gas is formed in the central region of the wafer W in which the complex concave-convex pattern is formed, and the complex concave and convex pattern is not formed. The outer peripheral portion is consumed by the same amount without causing a load effect, and is etched at a uniform etching rate across the entire surface of the wafer W.

Further, as described above, since the lower protruding portion 93c is provided on the outer peripheral portion of the lower surface 93b of the shower head portion 93, the decrease in the etching reaction energy on the outer peripheral side in the etching region P3 is suppressed, and the uniformity can be uniform from the related viewpoint. The etch rate is used for etching.

In this manner, the turntable 2a is continuously rotated several times, and the fluorine-containing gas and the hydrogen-containing gas are supplied into the vacuum vessel 1, and the first process gas and the second process gas are not supplied into the vacuum vessel 1. Thereby, the SiO ₂ film is etched.

Next, the film formation process described above is performed again. In the film formation step, the SiO ₂ film is further formed on the SiO ₂ film etched into a V shape by an etching step, and the film thickness is increased. Since the film formation is performed on the SiO ₂ film which is etched into a V shape, the film can be deposited from the bottom of the SiO ₂ film without being blocked at the time of film formation.

Next, the etching process described above is performed again. In the etching step, the SiO ₂ film is etched into a V shape.

By repeating the film forming process and the etching process described above in the required number of times, it is possible to fill the holes without voids in the SiO ₂ film. The number of repetitions of these steps can be a suitable number of times corresponding to the shape of the aspect ratio including the concave shape pattern such as a hole. For example, in the case where the length and width are relatively large, the number of repetitions increases. Further, it is estimated that the number of repetitions of the holes is larger than that of the grooves.

Further, in the present embodiment, the film forming process and the etching process are repeated to form an example in which the concave pattern formed on the surface of the wafer W is filled and formed, but the present invention is not limited to This point.

For example, the wafer W on which the film is formed in advance may be carried in, and only the etching process may be performed.

Further, for example, the rotary table 2a may be continuously rotated a plurality of times, and the first processing gas, the second processing gas, the fluorine-containing gas, and the hydrogen-containing gas may be simultaneously supplied into the vacuum chamber 1, and rotated once in the rotary table 2a. In the period of time, each of the film forming step and the etching step is performed. Further, the cycle of performing each of the film forming step and the etching step may be repeated a plurality of times.

According to the substrate processing apparatus and the substrate processing method according to the second embodiment of the present invention, the annular member 28 having the surface area increasing region 27 for increasing the surface area outside the concave portion 24a can be provided along the outer periphery of the concave portion 24a of the substrate holding region. The film deposited on the wafer W is uniformly etched.

In addition, in FIGS. 14 and 16, an example in which a concave-convex pattern is formed on all of the annular members 17 is described. However, in the case where the area increase amount is excessive due to the uneven pattern, an appropriate amount of flatness may be mixed on the upper surface. A pattern like a face.

[Third embodiment]

Fig. 17 is a view showing an example of a rotary table 2b of a substrate processing apparatus according to a third embodiment of the present invention. The substrate processing apparatus according to the third embodiment is provided at a point where the surface area increasing region 27b having the uneven pattern is provided around the concave portion 24d having the function of the substrate holding region, and is common to the substrate processing apparatus according to the second embodiment, but is uneven. The pattern is formed directly on the surface of the turntable 2b, but differs from the substrate processing apparatus according to the second embodiment.

In this manner, instead of using other members different from the turntable 2a like the annular member 28, the surface area increasing region 27b can be provided by forming a concave-convex pattern directly on the surface of the turntable 2b. The surface area increasing region 27b may be provided in each region in accordance with the use, and is preferably provided so as to be at least 2/3 or more, preferably 3/4 or more, around the outer circumference of the wafer W. For example, in FIG. 17, since the outermost peripheral points P of the concave portions 24d are linearly connected to each other, the outer circumference in the vicinity of the outermost peripheral point P is less than 1/4 of the outer circumference, and is 1/6 to 1 The outer side of the portion around /8 is not surrounded by the surface area increasing region 27b. At least the straight line connecting the outermost peripheral points P shown in Fig. 17 is the minimum reference, and it is preferable that the surface area increasing area 27b is also provided on the outer side.

Further, the surface area increasing region 27b shown in Fig. 17 has a hexagonal shape and an approximately hexagonal shape at the center portion, and the concave and convex pattern is formed to extend across the entire inner hexagonal shape and the outer hexagonal shape. In this way, in the case where the concave-convex pattern is directly formed on the rotary table 2b, not only the concave portion In the vicinity of 24d, a concave-convex pattern may be formed at a position away from the concave portion 24d.

Further, the concavo-convex pattern of the surface area increasing region 27b may be various shape patterns depending on the application. For example, similarly to the second embodiment, the groove pattern may be formed on the flat surface. In Fig. 17, the outer shape of the surface area increasing region 27b is formed in a hexagonal shape, and a pattern of parallel plural grooves is formed in the hexagonal side.

Fig. 18 is a view showing the surface of the concave-convex pattern of the concave portion 24d and the surface area increasing region 27b. As shown in FIG. 18, for example, the surface of the surface area increasing region 27b may be formed by forming a stripe pattern of a plurality of parallel grooves.

Fig. 19 is a perspective view showing a concave-convex pattern of the concave portion 24d and the surface area increasing region 27b. As shown in Fig. 19, the concavo-convex pattern may be formed by forming a plurality of grooves parallel to each other by the flat surface of the surface of the turntable 2b.

In the substrate processing apparatus according to the third embodiment, by forming the surface area increasing region 27b on the surface of the turntable 2b, the concave-convex pattern can be formed in a predetermined area as a whole, and the surface area is increased more than the flat surface.

Further, since the substrate processing method according to the third embodiment is almost the same as the substrate processing method according to the second embodiment, the description thereof will be omitted.

[Experimental results]

Next, the experimental results of the substrate processing apparatus and the substrate processing method according to the second and third embodiments of the present invention will be described.

Fig. 20 is a view showing a flow rate of CF ₄ changed in a conventional substrate processing apparatus, compared with a hard film formed on a flat surface of a hard wafer, and a wafer W formed on a wafer W having a pattern of 30 times surface area. The pattern of the etch rate of the film on the X-axis. As shown in FIG. 20, even if the flow rate of CF ₄ is changed to 10 sccm, 15 sccm, 20 sccm, 40 sccm, the etching rate with respect to the hard wafer is almost fixed, and in the wafer in which the pattern is formed, the etching rate of the edge portion is It is higher than the central area, and no improvement has been seen regarding the loading effect.

Fig. 21 is a view showing a conventional substrate processing apparatus which changes a rotational speed of a rotary table to form a hard film formed on a flat surface of a hard wafer, and is formed on a wafer W on which a pattern having a surface area of 30 times is formed. The pattern of the etch rate of the film on the X-axis. As shown in Fig. 21, even if the rotation speed is changed to 5 rpm, 30 rpm, or 60 rpm, the etching rate with respect to the hard wafer is almost For fixing, in the patterned wafer, the etching rate of the edge portion is higher than that of the central region, and no improvement is observed with respect to the load effect.

Fig. 22 is a view showing a pressure change in a vacuum vessel in a conventional substrate processing apparatus to compare a hard film formed on a flat surface of a hard wafer with a wafer W on which a pattern having a surface area of 30 times is formed. The pattern of the etch rate of the film on the X-axis. As shown in FIG. 22, even if the pressure in the vacuum vessel is changed to 1.3 torr, 2.0 torr, and 4.0 torr, the etching rate with respect to the hard wafer is almost fixed, and the edge portion is etched in the patterned wafer. The rate will be higher than the central area, and no improvement has been seen with respect to the loading effect.

In this way, even if various program conditions are changed, it is impossible to find a condition that suppresses the load effect and improves the in-plane uniformity of the etching process.

FIG. 23 is a view for explaining an experimental method of performing etching processing in two places on the X-axis around the concave portion 124 of the conventional substrate processing apparatus and two places on the Y-axis, in which four surface area increasing regions 27 are provided in total. As shown in FIG. 23, a trial experiment was performed in which the surface area increasing region 27 in which the uneven pattern was formed on the outer surface 4 of the concave portion 124 was subjected to an etching treatment.

Figure 24 is an experimental result on the X-axis of the pilot experiment shown in Figure 23. As shown in FIG. 24, by providing the surface area increasing region 27 at the outer side 2 on the X-axis, the etching rate of the outer side is increased as shown by the curve R4 in the wafer W having no uneven pattern, and In the wafer W on which the uneven pattern is formed, as shown by the curve S4, the etching rate on the outer side is lowered. This means that by providing the surface area increasing region 27, the consumption of the etching gas can be increased, and the outer etching rate is lowered. In Fig. 24, since the effect of the surface area increasing region 27 is too large to obtain a uniform etching rate, a uniform etching rate can be obtained by providing the surface area increasing region 27 which further reduces the surface area increasing amount. In this manner, by providing the surface area increasing region 27, it is possible to adjust the balance of the etching rate with the concave-convex pattern formed in the central region.

Figure 25 is an experimental result on the Y-axis of the pilot experiment shown in Figure 23. As shown in FIG. 25, by providing the surface area increasing region 27 at the outer side 2 on the Y axis, the etching rate of the outer side is increased as shown by the curve R5 in the wafer W having no uneven pattern, and In the wafer W on which the uneven pattern is formed, as shown by the curve S5, the etching rate on the outer side is lowered. This means that, like the X-axis, by providing the surface area increasing region 27, the consumption of the etching gas can be increased, and the outer etching rate is lowered. In Fig. 25, since the effect of the surface area increasing region 27 is too large, it cannot be A uniform etch rate is obtained, but by providing a surface area increasing region 27 that further reduces the surface area increase, a uniform etch rate can be obtained. In this manner, by providing the surface area increasing region 27, it is possible to adjust the balance of the etching rate with the concave-convex pattern formed in the central region.

As shown in FIG. 24 and FIG. 25, it is shown that by providing the surface area increasing region 27 on the outer side of the wafer W, an etching consumption state similar to the concave-convex pattern formed on the surface of the wafer W can be created, and the etching rate can be uniformized. . Therefore, according to the substrate processing apparatus and the substrate processing method according to the second and third embodiments using the related properties, even in the case of processing a substrate having a complicated uneven pattern on the surface, the in-plane uniformity of the substrate processing can be improved.

As described above, according to the embodiment of the present invention, the in-plane uniformity of the substrate treatment can be improved.

The preferred embodiments and examples of the present invention have been described in detail above, but the present invention is not limited to the above-described embodiments and examples, and can be implemented in the above embodiments and without departing from the scope of the present invention. For example, various changes and replacements are added.

The present application claims priority based on Japanese Patent Application No. 2015-216320, filed on Jan.

2a‧‧‧Rotary table

24a‧‧‧ recess

27‧‧‧ Surface area increase

Claims (22)

A substrate processing apparatus includes: a processing chamber; a rotating table disposed in the processing chamber; and a substrate holding area capable of holding a recessed shape of the substrate on the surface in a plurality of surfaces; a surface area increasing region is provided in the substrate The substrate holds the surface around the region, and the surface area of the surface is increased by a flat surface by the formation of the concave-convex pattern; and the processing gas supply mechanism supplies the processing gas to the surface of the rotating table. The substrate processing apparatus of claim 1, wherein the surface area increasing region has a ring shape along an outer circumference of the substrate holding region. The substrate processing apparatus of claim 2, wherein the surface area increasing region is formed on a surface of the annular member having a substantially annular shape, and the annular member is disposed in a larger diameter than the substrate holding region. a recess is provided on the surface of the turntable. The substrate processing apparatus of claim 3, wherein the annular member is made of quartz or tantalum. The substrate processing apparatus of claim 3, wherein the annular member is divided into a plurality of sheets. The substrate processing apparatus according to claim 1, wherein the surface area increasing region is provided substantially entirely outside the substrate holding region including at least a region in which the outermost regions of the substrate holding regions are linearly coupled to each other. The substrate processing apparatus of claim 6, wherein the surface area increasing region is a region where the concave and convex pattern is formed on the surface of the rotating table. The substrate processing apparatus according to claim 1, wherein the concave-convex pattern is formed with a groove pattern on the flat surface. The substrate processing apparatus of claim 1, wherein the concave-convex pattern increases the surface area of the flat surface by a pattern of 2 to 30 times. A substrate processing apparatus includes: a processing chamber; and a rotating table disposed in the processing chamber; The recessed substrate mounting region is disposed on the surface in a plurality of directions along the circumference of the rotating table, and has a larger diameter than the substrate, and the substrate can be placed on the side surface of the substrate without contacting the inner peripheral surface; The pin is provided at least three or more positions away from the inner peripheral surface in the bottom surface of the substrate mounting region, and is maintained along the outer peripheral shape of the substrate against centrifugal force caused by the rotation of the rotating table. a position of the substrate; and a processing gas supply mechanism for supplying a processing gas to the surface of the rotating stage. The substrate processing apparatus of claim 10, wherein a distance between the inner peripheral surface of the substrate mounting region and the substrate holding pin is set to sufficiently suppress a load effect of a processing gas supplied from the processing gas supply mechanism the distance. The substrate processing apparatus of claim 1, wherein the rotating stage is made of quartz. The substrate processing apparatus of claim 1, wherein the processing gas supply mechanism is an etching gas supply mechanism capable of supplying an etching gas; the etching gas supply mechanism is disposed in an etching region disposed along a circumference of the rotating table . The substrate processing apparatus according to claim 13 further comprising: a material gas supply region that is provided in the etching region and the periphery of the rotating table, and includes a film forming material gas supply mechanism; The reaction gas supply region is provided between the source gas supply region and the etching region in the peripheral direction of the turntable, and includes a film forming reaction gas supply mechanism. The substrate processing apparatus according to claim 14 is characterized in that between the etching region and the material gas supply region, and between the source gas supply region and the reaction gas supply region, a flushing gas is supplied to the rotation. A flushing gas supply mechanism for the surface of the table. A substrate processing method for holding a substrate in a recessed substrate holding region provided on a rotating table in a processing chamber in a peripheral direction, and rotating the rotating table and supplying a processing gas to the substrate to process the substrate The substrate processing method includes a step of rotating the turntable in a state in which a surface area increasing region in which a concave-convex pattern having a surface area larger than a flat surface is formed is provided around the substrate holding region; The process of rotating the rotating table and supplying the processing gas to the substrate to process the substrate. The substrate processing method of claim 16, wherein the surface area increasing region is formed on a surface of the annular member provided to form the substrate holding region. The substrate processing method according to claim 17, wherein the step of processing the substrate includes a step of supplying an etching gas to the substrate to etch the substrate. The substrate processing method according to claim 18, wherein the step of processing the substrate comprises a step of supplying a film forming gas to the substrate to form a substrate by film formation. A substrate holding member that holds a substrate on a predetermined substrate holding area on a rotating table, and a substrate holding member used in a substrate processing apparatus for processing the substrate, has a substrate holding portion that has an inner diameter that can hold the substrate The thickness has an outer shape and a bottom surface shape that can be placed on the substrate holding area; and a concave-convex pattern is attached to the surface to increase the surface area; the whole has a circular ring shape. The substrate holding member according to claim 20 of the patent application is divided into plural numbers in the peripheral direction. The substrate holding member of claim 20, wherein the concave-convex pattern increases the surface area by 2 to 30 times than the flat surface.