CN101467269B - Low profile side emitting led - Google Patents

Low profile side emitting led Download PDF

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Publication number
CN101467269B
CN101467269B CN2007800215251A CN200780021525A CN101467269B CN 101467269 B CN101467269 B CN 101467269B CN 2007800215251 A CN2007800215251 A CN 2007800215251A CN 200780021525 A CN200780021525 A CN 200780021525A CN 101467269 B CN101467269 B CN 101467269B
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light
emitting diode
ground floor
waveguide
layer
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CN101467269A (en
Inventor
O·B·什赫金
M·皮尤
G·哈伯斯
M·R·克雷姆斯
J·E·埃普勒
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Lumileds LLC
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Philips Lumileds Lighing Co LLC
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

Abstract

Low profile, side-emitting LEDs (10) are described, where all light is efficiently emitted within a relatively narrow angle generally parallel to the surface of the light- generating active layer (14). The LEDs enable the creation of very thin backlights for backlighting an LCD. In one embodiment, the LED is a flip chip with the n and p electrodes (18) on the same side of the LED, and the LED is mounted electrode-side down on a submount (22). A reflector (34) is provided on the top surface of the LED so that light impinging on the reflector is reflected back toward the active layer (14) and eventually exits through a side surface of the LED. A waveguide layer (30) and/or one or more phosphors layers are deposed between the semiconductor layers (12, 14, 16) and the reflector for increasing the side emission area for increased efficiency. Side-emitting LEDs with a thickness of between 0.2-0.4 mm can be created.

Description

The light-emitting diode that low profile side is luminous
Technical field
The present invention relates to use the lighting apparatus of the light-emitting diode (LED) of non-laser, more particularly, backlight and other similar lighting apparatus of relating to for the light-emitting diode that uses lateral emitting carry out improved technology.
Background technology
In mobile phone, PDA(Personal Digital Assistant), laptop computer, both desktop monitors and TV applications, usually use LCD (LCD).One embodiment of the present of invention relate to the color, transmissive liquid crystal displays that needs backlight, and here backlight can use one or more light-emitting diodes, send white or colourama.The difference of light-emitting diode and laser diode is that light-emitting diode sends incoherent light.
In many small-sized displays, as for mobile phone, personal digital assistant and miscellaneous equipment, importantly display is very thin.And then, because such miniscope is normally battery-operated, so importantly, to be coupled to the back side of LCD efficiently from the light of light-emitting diode.
The light-emitting diode that sends most of light in the direction that is roughly parallel to circuit board is known, and has been used in the backlight.This is that the space is effective in mini-plant, because be parallel to LCD to the circuit board of LED power supply.In the side that couples light to the backlight waveguide of side-emitted, make the height of light-emitting diode in making the thinner process of backlight, become a limiting factor.
The light-emitting diode of one type lateral emitting is " top light emitting " light-emitting diode, thus the packed surface that makes the light-emitting active layer of light-emitting diode perpendicular to circuit board of this light-emitting diode.By the lens of lateral emitting are provided above the light-emitting diode of routine, make light only the offside reflection of scioptics go out, also can make the light-emitting diode of lateral emitting.The light-emitting diode of the lateral emitting of these types does not have thin profile (low profile).
Therefore, need the light-emitting diode of the lateral emitting of thin profile, and the efficient backlight that adds such light-emitting diode.
Summary of the invention
So that LCD is carried out back lighting, the led designs of various non-laser has been described here in order to produce improved backlight.Backlight can also be used for other illumination and use.Light-emitting diode is a lateral emitting, in being parallel to the relatively little angle on light-emitting active layer surface substantially, sends all light effectively.Do not use lens to produce side-emitted.Light-emitting diode has thin profile, makes backlight as thin as a wafer.
Light-emitting diode comprise n-type layer, p-type layer and be clipped in n-type layer and p-type layer between active layer.Light-emitting diode is a flip-chip, and its n and p electrode are in the same side of light-emitting diode.
Light-emitting diode with electrode side opposite surfaces on, form number other layer arbitrarily, carry out phosphor layer, light scattering layer, ducting layer, dichroscope and other layer of Wavelength conversion comprising the light that active layer is sent.At these cremasteric reflex bodies above other layer, make the light that incides reflector be reflected and finally launch from the side surface of light-emitting diode towards active layer.Importantly, between semiconductor layer and reflector, provide extra play,, thereby increase extraction efficiency with increase side-emitted area.Phosphor layer can be the combination of red, green, blue, YAG or phosphor.
To be installed on the Submount under the light-emitting diodes pipe electrode side direction.Submount is surface mounted on the printed circuit board (PCB) that is coupled with power supply.
Final light-emitting diode has profile as thin as a wafer, because it is flip-chip and does not use lens to carry out side-emitted.Light-emitting diode can send the light of white light or any other color.
Described a kind of backlight, described backlight comprises thin polymer waveguide, and described waveguide has bottom reflective surface and top-emission surface.Liquid crystal layer is positioned on the top surface of waveguide.The light-emitting diode of foursquare lateral emitting is substantially inserted opening in the backlight, and here the light emission side of light-emitting diode becomes the angles of about 45 degree with respect to the reflection rear wall of waveguide.The light that sends from light-emitting diode is coupled to waveguide effectively, and reflects away to liquid crystal layer by the top of waveguide.
Description of drawings
Fig. 1 is the end view according to the light-emitting diode of the first embodiment of the present invention;
Fig. 2 is the end view according to the light-emitting diode of the second embodiment of the present invention;
Fig. 3 is the end view according to the light-emitting diode of the third embodiment of the present invention;
Fig. 4 is the end view according to the light-emitting diode of the fourth embodiment of the present invention;
Fig. 5 is the end view according to the light-emitting diode of the fifth embodiment of the present invention;
Fig. 6 is the sectional drawing according to the light-emitting diode of the sixth embodiment of the present invention;
Fig. 7 is the view from top to bottom of thin backlight of optimum position of the light-emitting diode of expression lateral emitting;
Fig. 8 is the close-up view of the light-emitting diode of Fig. 7 in this backlight;
Fig. 9,10 and 11 is side cutaway views of the dissimilar light-emitting diodes in the backlight of Fig. 7;
Figure 12 is mounted in the profile of the light-emitting diode of the lateral emitting in the cup-shaped reflector.
With similar or components identical in each accompanying drawing of identical digitized representation.
Embodiment
Embodiments of the invention comprise the light-emitting diode of the lateral emitting of thin profile, can realize the thin backlight structure of liquid crystal display applications and other application.
Fig. 1 is the end view of first embodiment of the light-emitting diode 10 of lateral emitting.In one embodiment, the thickness of side light-emitting area is 0.2-0.4mm.In another embodiment, the thickness of side light-emitting area is 0.2-0.6mm.
The present invention may be used on the light-emitting diode that any material system constitutes, for example A1InGaP (being generally used for launching red in gold-tinted) or GaN (being generally used for emiting green to ultraviolet light).Form light-emitting diode on the initial growth substrate, described initial growth substrate such as sapphire, SiC or GaAs depend on the type of the light-emitting diode that will form.In the ordinary course of things, form n-type layer 12 earlier, then form active layer 14, and then form p-type layer 16.Carry out etching for p-type layer 16, so that expose the part of following n-type layer 14.On the surface of light-emitting diode, form reflective metals electrode 18 (as silver, aluminium or alloy) then thus contact with p-type layer with n-type layer.When diode forward was setovered, active layer 14 was luminous, and luminous wavelength is by the component decision of active layer.It is known forming such light-emitting diode, does not need to describe in further detail.In U.S. Patent No. 6828596 (authorizing people such as Steigerwald) and U.S. Patent No. 6876008 (authorizing people such as Bhat), described the formation of the light-emitting diode of all visible wavelengths, such light-emitting diode is installed on Submount and has been powered to light-emitting diode via printed circuit board (PCB), these two patents all transfer the assignee of the present invention, and here with reference to quoting.
The gross thickness of the semiconductor layer of light-emitting diode is usually less than 100 microns (0.1 millimeters).
Then light-emitting diode is installed on the Submount 22, becomes flip-chip.Submount 22 comprises metal electrode 24, and metal electrode 24 is to be soldered or ultrasonically welded on the metal 18 on the light-emitting diode via soldered ball 26.Can also use the joint of other type.Submount electrodes 24 is electrically connected on the pad that (for example via through hole) be positioned at Submount bottom, makes Submount can be surface mounted on the printed circuit board (PCB) with the power supply coupling.Submount 22 can be formed by any suitable material, for example pottery, silicon, aluminium etc.If the Submount material conducts electricity, above the Submount material, form insulating barrier, and above insulating barrier, form metal electrode pattern.The effect of Submount is a mechanical support, provides electrical interface between the n of the exquisiteness on the light-emitting diode chip for backlight unit and p electrode and power supply, and heat radiation can be provided.If use a plurality of light-emitting diodes as light source, Submount also provides interconnecting between the light-emitting diode.Submount is known.
For making light-emitting diode 10 have as thin as a wafer profile, and, can remove growth substrates, for example pass through CMP in order to prevent that the grown substrate of light from absorbing.In one embodiment, the removal of growth substrates is to carry out after light-emitting diode is installed on their Submount and before light-emitting diode and Submount are cut.
After removing growth substrates selectively, on n-type layer 12, form optical element, described optical element has been strengthened the side-emitted of light-emitting diode 10.In one embodiment, optical element comprises: transparent ducting layer 30, the scattering layer 32 that has added reflection grain or coarse/prism surface and reflector, top 34.Ducting layer 30 can be formed by any suitable, transparent or translucent organic or inorganic material.Lower floor 36 can be dichroscope or one, thereby the light that is reflected downwards by reflector 34 can not absorbed by semiconductor layer.
If growth substrates is transparent, as sapphire, can on growth substrates, form optical layers, Sapphire Substrate is here as waveguide.The thickness of growth substrates also can reduce and all do not removed.
These optical layers can comprise the phosphor layer on plane, are used to change the light wavelength that active layer 14 sends.The phosphor layer on plane can be pre-formed and be potsherd, and is fixed on the led layers, perhaps, phosphor particles can be for example by electrophoresis by the diaphragm type deposit.If the use phosphor layer, active layer 14 sends blue light or ultraviolet light usually, and phosphor becomes one or more other colors with this wavelength Conversion, so that produce white light or other color.Other embodiment that uses phosphor is described below.
Reflector 34 can be minute surface or diffusion.Specular reflector can be distributed Bragg reflectors (DBR), is formed by organic layer or inorganic layer.Specular reflector can also be layer of aluminum or other reflective metals, or the combination of distributed bragg reflector and metal.The diffuse reflection body can be by forming in rough surface metals deposited or the diffuse material such as suitable Chinese white.
In another embodiment, between n-type layer 12 and reflector 34, has only a ducting layer.
In fact, all light that send by active layer 14 or directly launch by the side of light-emitting diode, perhaps after the one or many internal reflection by described side-emitted, described here side is substantially perpendicular to the first type surface of active layer 14.The light less than critical angle that incides ducting layer 30 sides will reflect and enter light-emitting diode.Therefore, by making light in a plurality of angle reflections and final in the angle reflection less than critical angle, scattering layer 32 or diffuse reflector 34 improve side-emitted efficient usually.Because this internal reflection, exporting from the light of light-emitting diode 10 will be low-angle with respect to the plane of active layer.
Final light-emitting diode 10 has profile as thin as a wafer.By led sides is thickened, efficient will improve.Each layer on semiconductor layer should be thick as semiconductor layer at least, so that substantially increase the height of side emission area.Therefore, major part is only sent by the side of each layer above the semiconductor layer.
Fig. 2 is the end view of second embodiment of the light-emitting diode 40 of lateral emitting, and here active layer 14 sends blue light.The phosphor layer 42 that Ce:YAG makes sends gold-tinted when encouraging by blue light.The blue light of being sent out and this gold-tinted combination results white light.Radiative spectrum depends on the doping of cerium in the phosphor (Ce) and the thickness of phosphor layer 42 to a great extent.Phosphor layer 42 can be the phosphor particles of sintering or the phosphor particles in the transparent or semitransparent binding agent, and phosphor particles can be organic or inorganic.Phosphor layer 42 can also scattered light.Layer 44 is transparent or has the separate layer of scattering that this separate layer is by increasing the efficient that lateralarea improves light-emitting diode 40.Layer 44 thickness also influences the gold-tinted that light-emitting diode 40 sends and the mixing of blue light.Layer 46 is dichroscopes, dichroscope make blue light by but gold-tinted is reflected back.Top reflector 34 guarantees that all light all sends by the side.
Fig. 3 is the end view of the 3rd embodiment of light-emitting diode 50 that sends the lateral emitting of white light or any other color of light.Active layer 14 sends blue light or ultraviolet light.For the embodiment of ultraviolet light, red phosphor layer 51, green phosphor layer 52 and blue phosphor layer 53 are piled up.Phosphor layer can be preformed sinter layer or the phosphor particles in binding agent.Phosphor layer allows some ultraviolet light by extremely above-mentioned layer.In addition, the phosphor layer above the light that sends from following phosphor can encourage.The decision of the thickness of phosphor layer and component luminous white point.
If active layer 14 sends blue light, blue phosphor layer 53 can be saved or replace with separate layer transparent or scattering.
In an independent layer, can also mix different phosphors.Here phosphors of mentioning all are known types, can obtain on market.
Can use dichroscope 56, dichroscope passes through the light of active layer but other wavelength is reflected, thereby prevents that the light of reflection is absorbed by semiconductor layer downwards.
If only plan light-emitting diode 50 is used to launch blue light, then can use non-absorbent optical element such as sapphire or silicone to replace described each layer, with non-absorbent optical element as waveguide and separate layer to raise the efficiency.
Fig. 4 is the end view of the 4th embodiment of the light-emitting diode 60 of lateral emitting.Light-emitting diode 60 emission white lights.Active layer 14 emission blue lights.Transparent waveguide 62 and reflector 34 make blue light come out from the side of waveguide 62 and the side-emitted of semiconductor layer.Light-emitting diode 60 scribbles one deck Ce:YAG phosphor 63, emission sodium yellow when phosphor 63 is subjected to the excitation of blue light.Phosphor can be the phosphor particles that wraps in the electrophoretic deposition in the silicone.Phosphor is changed a part of blue light downwards to produce gold-tinted, and blue light and yellow light mix are to produce white light.
Reflector 34 in all embodiment can be minute surface or diffusive.As among all embodiment, the area that increases the side will increase the extraction efficiency of light.
Fig. 5 is the end view of the 5th embodiment of the light-emitting diode 64 of lateral emitting, and light-emitting diode 64 emits white light.Active layer 14 blue light-emittings.Before forming transparent ducting layer 65 on the semiconductor layer, cover semiconductor layer with Ce:YAG phosphor layer 66.Phosphor layer 66 can be the phosphor particles that wraps in the electrophoretic deposition in the silicone.The phosphor jaundice light that is energized.Blue light and yellow light mix emit white light light-emitting diode 64.The mixing of the thickness of phosphor layer 66 and component decision gold-tinted and blue light.
Fig. 6 is the sectional drawing of the 6th embodiment of light-emitting diode 68 that produces the lateral emitting of ruddiness.Light-emitting diode comprises: thick n-type GaP layer 69 (as waveguide), n-type A1InGaP covering (cladding layer) 70, active layer 71, p-type A1InGaP covering 72 and p-type GaP layer 73.Carry out etching for these layers, expose the n-type GaP layer 69 of part conduction.Form insulating barrier 74 above the side of layer 70-74, deposited metal 75 then, and it is contacted with n-type GaP layer 69.Reflective metal layer 76 contacts with p-type GaP layer 73.Electric current by metal level 75,76 makes active layer 71 send ruddiness.
Outer surface 77 for n-type GaP layer 69 carries out etching, makes its surface roughening so that scattered light, such as the roughening that forms porous, ripple, pyramid or any other type.Doing has like this increased the extraction of light from chip sides.Carry out on other embodiment of light-emitting diode of description such processing method of the outer surface of light-emitting diode can also be here, so that increase the extraction of light.The top reflector 34 that forms after etching n-type GaP layer 69 has guaranteed that all light all sends from the side.
The degree of depth of the roughened sides of n-type GaP layer 69 is preferably less than the degree of depth of the roughened top of n-type GaP layer.This is because to leave the top surface scattered light on all directions be important.The scattered light that incides sidewall will be launched by the roughened surface of sidewall.The degree of depth by making the roughening sidewall is thinner, and the angle of departure of the light-emitting diode of lateral emitting is less.
The flip-chip LED of lateral emitting has series of advantages when being used in illuminator.In backlight, the flip-chip LED of lateral emitting be owing to will couple light in the waveguide preferably, allow to use thin waveguide, less light-emitting diode, shine uniformity and higher efficient preferably.
Fig. 7 is the view from top to bottom in 2 inches display backlight sources 80, and backlight 80 can be used in the colour liquid crystal display device of mobile phone.Light-emitting diode 82 according to the single flip-chip lateral emitting of any one embodiment described herein all can add in the transparent waveguide 84, as shown in Figure 7.Such structure provides brightness extremely uniformly on the entire backlight source.Waveguide 84 can be formed by polymer.Light-emitting diode 82 is foursquare in the ordinary course of things, and its side becomes about miter angle with respect to the inner reflection surface of waveguide 84.
Fig. 8 is the close-up view of light-emitting diode 82 and waveguide 84.Waveguide 84 is molded as has foursquare hole 86 near the place, rear surface.The sidewall of waveguide 84 is coated with reflecting material 88 (Fig. 7).The lower surface of waveguide 84 also can be coated with reflective metals, and perhaps waveguide bottom surface can angulation (as wedge shape), thereby by the total internal reflection reverberation that makes progress.Between light-emitting diode 82 and waveguide material, there is little air gap.
Because light-emitting diode 82 angulations, as shown in Figure 7, reflex to the wall of waveguide 84 and in the waveguide internal mix from the light of four sides.Because the reflecting surface of the side of light-emitting diode and waveguide 84 is all not parallel, do not get back to reflection in the light-emitting diode so do not exist by waveguide 84.
If be coupled to the side of waveguide simply from the light of the light-emitting diode of routine, the angle that the refractive index of waveguide material may squeezed light then.Therefore, may need a plurality of light-emitting diodes that separate, and mix and seldom to cause the brightness uniformity in entire backlight source poor.
Because the emitting surface of the light-emitting diode of realizing by flip chip structure and the thin profile of narrow gap between the waveguide 84 and light-emitting diode 82, the coupling efficiency that enters in the waveguide 84 is very high.
Fig. 9-the 11st is installed in the side cutaway view of the light-emitting diode of the lateral emitting on the Submount in the opening of waveguide shown in Figure 7.
In Fig. 9, light-emitting diode 90 has top reflector 34, so light sends from the side of light-emitting diode 90.The reflective metals part 88,92,93 that forms on the non-emitting surface of waveguide 84 only is issued in the liquid crystal layer 96 all light by the waveguide top.Owing between light-emitting diode 90 and Submount 22, do not have wire-bonded and do not have peripheral material, as lens, so at the emission wall of light-emitting diode 90 and the interval between the waveguide 84 very near or directly contact.Because it is the thin profile of light-emitting diode,, high or littler the coupled surface of this height and thin-film guide (as 0.4-0.65mm) so light-emitting area can be the 0.2-0.4mm height.With the light-emitting area height of routine is that the light-emitting diode of 0.6mm or bigger lateral emitting is compared, and there is advantage in so thin profile aspect the optical coupling of the light-emitting diode of lateral emitting.
The entire equipment of Fig. 9 is a LCD (LCD) colored, transmission-type, and backlight sends the white light that comprises the red, green, blue light component here.
Each layer 96 of liquid crystal generally includes: polarizer, rgb filters, liquid crystal layer, thin film transistor array layer and ground plane layer.Make liquid crystal layer change the polarization state of white light at each location of pixels at each location of pixels by the electric field that thin-film transistor produced that optionally is activated at each location of pixels.Rgb filters only allows the red, green, blue location of pixels emission of red, the green or blue component of white light in correspondence.LCD is well-known, does not need here to further describe.
Figure 10 has illustrated the light-emitting diode 98 of the lateral emitting that does not have reflective top layer.As an alternative, the reflecting surface 92 of waveguide makes all light change direction, the waveguide part below the side enters each layer of liquid crystal 96.
Figure 11 represents light-emitting diode 98, and reflecting surface 92 adjacency of its top surface and waveguide produce side-emitted.The reflector 92 of waveguide is used for side-emitted, has simplified the manufacturing of light-emitting diode.In Figure 11, Submount 22 is partly inserted in the hole of waveguide 84.
The notion of the light-emitting diode of lateral emitting also has superiority for the use of compact luminaire, for example can be used for the photoflash lamp of camera, in the microflash of mobile phone camera.
Figure 12 represent light-emitting diode 100 side-emitted only how to collect and how be changed direction by the reflecting surface 102 (for example parabolic reflector) that is shaped.Reflector can be the aluminium cup that has centre bore, and centre bore is used to hold light-emitting diode 100.In the compact flash application that is arranged on mobile phone like this is useful, and the emitter of the thin profile here and reflective optical devices have reduced packaging height significantly.Describe as reference Fig. 2-5, by using one or more phosphors, light-emitting diode 100 sends white light.The photoflash lamp that is used for mobile phone of prior art normally utilizes the light-emitting diode of the top-emission of Fresnel Lenses.Compare with such prior art systems, the present invention has superiority, and avoids the use of lens.
In addition, have in the prior art photoflash lamp of blue LED of YAG phosphor in use, the yellow of phosphor is not too eye-catching.The flash design of Figure 12 has been avoided the vision conspicuity problem of YAG phosphor layer, and this is because reflector 34 has covered the cause of phosphor.The color of the top surface by allow selecting light-emitting diode, top reflector 34 has provided the chance of design even, described selection color be by in the reflector 34 top adhere to any coloured surface and realize.
Though described the present invention in detail, those of ordinary skill in the art should be realized that, is providing under the situation of the present disclosure, can improve the present invention under the prerequisite that does not depart from the design of spirit described herein and invention.Therefore scope of the present invention is not to be intended to be subject to the specific embodiment that illustrates and describe here.

Claims (31)

1. luminescent device comprises:
The light-emitting diode of the non-laser of side-emitted (LED), described light-emitting diode comprises:
First semiconductor layer of the first kind;
Second semiconductor layer of second type; With
Active layer between described first semiconductor layer and described second semiconductor layer, described active layer has first type surface;
First electrode that contacts with described first semiconductor layer;
With second electrode that described second semiconductor layer contacts, described first electrode and described second electrode are positioned at first side of described light-emitting diode, are used to be directly connected to the electrode on the Submount, and described light-emitting diode is a flip-chip;
Ground floor with side, described side is substantially perpendicular to the first type surface of described active layer, and the most of light that produces in described active layer is by described side-emitted; With
Reflector above described ground floor, making all basically light that incides on the described reflector be changed direction gets back in the described light-emitting diode, described light-emitting diode is from all side-emitted light of described light-emitting diode, and all sides of described light-emitting diode are substantially perpendicular to the first type surface of described active layer;
Wherein: described ground floor comprises phosphor, be used for changing the light wavelength that described active layer sends downwards, described light-emitting diode also comprises the dichroscope between described ground floor and described first semiconductor layer, be used for the light wavelength that described phosphor sends is reflected back in the described ground floor, but the light wavelength that described active layer is sent is passed through;
Wherein light-emitting diode is installed on the photoconduction with top and lower surface, makes described at least ground floor between described top and lower surface, enters described photoconduction from the optical coupling of the side-emitted of described ground floor.
2. the device of claim 1 also comprises Submount, and described light-emitting diode is installed on the described Submount.
3. the device of claim 1, wherein: described ground floor comprises waveguide.
4. the device of claim 1, wherein: described ground floor comprises the phosphor of at least a type.
5. the device of claim 1, wherein: described ground floor comprises waveguide, and described light-emitting diode also comprises phosphor layer, and described phosphor layer covers on the side surface of described light-emitting diode at least.
6. the device of claim 1, wherein: described ground floor comprises the phosphor and the waveguide of at least a type.
7. the device of claim 1, wherein: the height of the light emission side of described light-emitting diode is between 0.2-0.4mm.
8. the device of claim 1, wherein: described ground floor comprises the Ce:YAG phosphor.
9. the device of claim 1, wherein: described ground floor comprises red and green emitted phosphor at least.
10. the device of claim 9, wherein: described redness and green emitted phosphor form different layers as the part of described ground floor.
11. the device of claim 1, wherein: described active layer sends blue light.
12. the device of claim 1, wherein: described active layer sends ultraviolet light.
13. the device of claim 1, wherein: described ground floor comprises waveguide, and described light-emitting diode also comprises phosphor layer, and described phosphor layer is between described first semiconductor layer and described waveguide.
14. the device of claim 1, wherein: described ground floor has outer surface, and the sidewall at least of described ground floor is roughened so that scattered light.
15. the device of claim 1, wherein: described ground floor has the top surface that is positioned under the described reflector, and described top surface is roughened so that scattered light.
16. the device of claim 1 also comprises backlight, described backlight comprises waveguide, and described light-emitting diode is installed in described waveguide, so that will be coupled to from the side-emitted of described light-emitting diode in the described waveguide.
17. the device of claim 16, wherein: described light-emitting diode has the straight rectangular shape in side, and wherein: the side that the waveguide of described backlight has with respect to described light-emitting diode is the side that tilts.
18. the device of claim 16, wherein: the waveguide of described backlight has mirrored sides.
19. the device of claim 16 also comprises: the liquid crystal layer on described backlight is used for the optionally pixel of control display screen curtain.
20. the device of claim 16, wherein: the reflector on described ground floor is the reflecting surface in described backlight waveguide.
21. the device of claim 1, wherein: the reflector on described ground floor forms on described ground floor.
22. the device of claim 1 also comprises: surround the reflector of the bending of described light-emitting diode, be used to make side-emitted light to change direction from described light-emitting diode.
23. the device of claim 22, wherein: described light-emitting diode is the photoflash lamp that is used for camera.
24. the device of claim 1, wherein: described light-emitting diode emission white light.
25. the device of claim 1, wherein: removed the growth substrates that is used for described first semiconductor layer and described second semiconductor layer.
26. a luminescent device comprises:
The light-emitting diode of the non-laser of side-emitted (LED), described light-emitting diode comprises:
First semiconductor layer of the first kind;
Second semiconductor layer of second type; With
Active layer between described first semiconductor layer and described second semiconductor layer, described active layer has first type surface;
First electrode that contacts with described first semiconductor layer;
With second electrode that described second semiconductor layer contacts, described first electrode and described second electrode are positioned at first side of described light-emitting diode, are used to be directly connected to the electrode on the Submount, and described light-emitting diode is a flip-chip;
Ground floor with side, described side is substantially perpendicular to the first type surface of described active layer, and the most of light that produces in described active layer is by described side-emitted; With
Reflector above described ground floor, making all basically light that incides on the described reflector be changed direction gets back in the described light-emitting diode, described light-emitting diode is from all side-emitted light of described light-emitting diode, and all sides of described light-emitting diode are substantially perpendicular to the first type surface of described active layer;
Wherein: described ground floor comprises red and the green emitted phosphor at least, and described redness and green emitted phosphor form different layers as the part of described ground floor;
Wherein light-emitting diode is installed on the photoconduction with top and lower surface, makes described at least ground floor between described top and lower surface, enters described photoconduction from the optical coupling of the side-emitted of described ground floor.
27. the device of claim 26 also comprises backlight, described backlight comprises waveguide, and described light-emitting diode is installed in described waveguide, so that will be coupled to from the side-emitted of described light-emitting diode in the described waveguide.
28. the device of claim 27, wherein: described light-emitting diode has the straight rectangular shape in side, and wherein: the side that the waveguide of described backlight has with respect to described light-emitting diode is the side that tilts.
29. the device of claim 27, wherein: the waveguide of described backlight has mirrored sides.
30. the device of claim 27 also comprises: the liquid crystal layer on described backlight is used for the optionally pixel of control display screen curtain.
31. the device of claim 27, wherein: the reflector on described ground floor is the reflecting surface in described backlight waveguide.
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