CN101465351A - 半导体器件的电感器及其制造方法 - Google Patents

半导体器件的电感器及其制造方法 Download PDF

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Publication number
CN101465351A
CN101465351A CNA2008101866631A CN200810186663A CN101465351A CN 101465351 A CN101465351 A CN 101465351A CN A2008101866631 A CNA2008101866631 A CN A2008101866631A CN 200810186663 A CN200810186663 A CN 200810186663A CN 101465351 A CN101465351 A CN 101465351A
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CN
China
Prior art keywords
well region
blind zone
district
type
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2008101866631A
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English (en)
Chinese (zh)
Inventor
金寿台
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DB HiTek Co Ltd
Original Assignee
Dongbu Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongbu Electronics Co Ltd filed Critical Dongbu Electronics Co Ltd
Publication of CN101465351A publication Critical patent/CN101465351A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CNA2008101866631A 2007-12-17 2008-12-16 半导体器件的电感器及其制造方法 Pending CN101465351A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020070132393 2007-12-17
KR1020070132393A KR100954919B1 (ko) 2007-12-17 2007-12-17 반도체 소자용 인덕터 및 그 제조 방법

Publications (1)

Publication Number Publication Date
CN101465351A true CN101465351A (zh) 2009-06-24

Family

ID=40752096

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2008101866631A Pending CN101465351A (zh) 2007-12-17 2008-12-16 半导体器件的电感器及其制造方法

Country Status (4)

Country Link
US (1) US20090152675A1 (ko)
KR (1) KR100954919B1 (ko)
CN (1) CN101465351A (ko)
TW (1) TW200929525A (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103390605A (zh) * 2012-05-08 2013-11-13 上海华虹Nec电子有限公司 电感
CN106783799A (zh) * 2016-12-29 2017-05-31 上海集成电路研发中心有限公司 一种毫米波电感结构

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102194817B (zh) * 2010-03-03 2013-10-30 中芯国际集成电路制造(上海)有限公司 半导体器件
KR20160058592A (ko) * 2014-11-17 2016-05-25 에스케이하이닉스 주식회사 알에프 집적회로 및 그 제조방법
US11037885B2 (en) * 2019-08-12 2021-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor packaging device comprising a shield structure

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2870485B2 (ja) * 1996-06-03 1999-03-17 日本電気株式会社 半導体装置の製造方法
KR100244188B1 (ko) 1997-08-20 2000-02-01 구자홍 반도체 기판상의 인덕터 및 그의 제조방법
US6133079A (en) 1999-07-22 2000-10-17 Chartered Semiconductor Manufacturing Ltd. Method for reducing substrate capacitive coupling of a thin film inductor by reverse P/N junctions
US20020125537A1 (en) * 2000-05-30 2002-09-12 Ting-Wah Wong Integrated radio frequency circuits
KR100438892B1 (ko) * 2001-12-21 2004-07-02 한국전자통신연구원 원칩형 박막 인덕터 및 그 제조 방법
JP4141881B2 (ja) 2003-04-04 2008-08-27 シャープ株式会社 集積回路
US7238581B2 (en) * 2004-08-05 2007-07-03 Chartered Semiconductor Manufacturing Ltd. Method of manufacturing a semiconductor device with a strained channel
US20070108477A1 (en) * 2005-11-04 2007-05-17 Tsun-Lai Hsu Semiconductor structure

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103390605A (zh) * 2012-05-08 2013-11-13 上海华虹Nec电子有限公司 电感
CN103390605B (zh) * 2012-05-08 2016-02-10 上海华虹宏力半导体制造有限公司 电感
CN106783799A (zh) * 2016-12-29 2017-05-31 上海集成电路研发中心有限公司 一种毫米波电感结构
CN106783799B (zh) * 2016-12-29 2019-06-21 上海集成电路研发中心有限公司 一种毫米波电感结构

Also Published As

Publication number Publication date
KR20090064990A (ko) 2009-06-22
TW200929525A (en) 2009-07-01
KR100954919B1 (ko) 2010-04-27
US20090152675A1 (en) 2009-06-18

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SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20090624