CN101462692A - 基于各向异性蚀刻制造结构的方法和具有蚀刻掩模的硅基片 - Google Patents
基于各向异性蚀刻制造结构的方法和具有蚀刻掩模的硅基片 Download PDFInfo
- Publication number
- CN101462692A CN101462692A CN200810188516.8A CN200810188516A CN101462692A CN 101462692 A CN101462692 A CN 101462692A CN 200810188516 A CN200810188516 A CN 200810188516A CN 101462692 A CN101462692 A CN 101462692A
- Authority
- CN
- China
- Prior art keywords
- etching mask
- mask
- etching
- correction
- silicon chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims abstract description 388
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 88
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 84
- 239000010703 silicon Substances 0.000 title claims abstract description 84
- 239000000758 substrate Substances 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 238000012937 correction Methods 0.000 claims abstract description 103
- 238000000034 method Methods 0.000 claims description 88
- 230000003287 optical effect Effects 0.000 claims description 51
- 230000008569 process Effects 0.000 claims description 51
- 230000001915 proofreading effect Effects 0.000 claims description 51
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 38
- 238000005520 cutting process Methods 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 238000007664 blowing Methods 0.000 claims description 2
- 230000009467 reduction Effects 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 25
- 239000000243 solution Substances 0.000 description 23
- 238000010586 diagram Methods 0.000 description 16
- 229910052581 Si3N4 Inorganic materials 0.000 description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 13
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical group [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 12
- 238000012545 processing Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 6
- 230000000873 masking effect Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 108091008695 photoreceptors Proteins 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 230000011514 reflex Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000347 anisotropic wet etching Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00388—Etch mask forming
- B81C1/00404—Mask characterised by its size, orientation or shape
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Mechanical Optical Scanning Systems (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007327510 | 2007-12-19 | ||
| JP2007327510A JP2009148847A (ja) | 2007-12-19 | 2007-12-19 | 異方性エッチングによる構造体の作製方法、及びエッチングマスク付きシリコン基板 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101462692A true CN101462692A (zh) | 2009-06-24 |
Family
ID=40788273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810188516.8A Pending CN101462692A (zh) | 2007-12-19 | 2008-12-19 | 基于各向异性蚀刻制造结构的方法和具有蚀刻掩模的硅基片 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20090161189A1 (https=) |
| JP (1) | JP2009148847A (https=) |
| CN (1) | CN101462692A (https=) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106767551A (zh) * | 2016-11-18 | 2017-05-31 | 合肥工业大学 | 一种微纳米测量设备用高精度高灵敏弹性簧片的制作方法 |
| CN109655631A (zh) * | 2017-10-10 | 2019-04-19 | 罗伯特·博世有限公司 | 微机械弹簧结构 |
| CN111463123A (zh) * | 2019-01-18 | 2020-07-28 | 东京毅力科创株式会社 | 蚀刻膜的方法 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5842356B2 (ja) | 2011-03-24 | 2016-01-13 | セイコーエプソン株式会社 | アクチュエーター、光スキャナーおよび画像形成装置 |
| JP2012220641A (ja) | 2011-04-06 | 2012-11-12 | Seiko Epson Corp | アクチュエーター、光スキャナーおよび画像形成装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6831765B2 (en) * | 2001-02-22 | 2004-12-14 | Canon Kabushiki Kaisha | Tiltable-body apparatus, and method of fabricating the same |
| US6803843B2 (en) * | 2001-02-22 | 2004-10-12 | Canon Kabushiki Kaisha | Movable-body apparatus, optical deflector, and method of fabricating the same |
| JP3740444B2 (ja) * | 2001-07-11 | 2006-02-01 | キヤノン株式会社 | 光偏向器、それを用いた光学機器、ねじれ揺動体 |
-
2007
- 2007-12-19 JP JP2007327510A patent/JP2009148847A/ja not_active Withdrawn
-
2008
- 2008-12-12 US US12/333,910 patent/US20090161189A1/en not_active Abandoned
- 2008-12-19 CN CN200810188516.8A patent/CN101462692A/zh active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106767551A (zh) * | 2016-11-18 | 2017-05-31 | 合肥工业大学 | 一种微纳米测量设备用高精度高灵敏弹性簧片的制作方法 |
| CN109655631A (zh) * | 2017-10-10 | 2019-04-19 | 罗伯特·博世有限公司 | 微机械弹簧结构 |
| CN111463123A (zh) * | 2019-01-18 | 2020-07-28 | 东京毅力科创株式会社 | 蚀刻膜的方法 |
| CN111463123B (zh) * | 2019-01-18 | 2024-04-05 | 东京毅力科创株式会社 | 蚀刻膜的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009148847A (ja) | 2009-07-09 |
| US20090161189A1 (en) | 2009-06-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20090624 |