CN101460002B - 用于产生均匀的处理速率的方法和设备 - Google Patents

用于产生均匀的处理速率的方法和设备 Download PDF

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Publication number
CN101460002B
CN101460002B CN200810178065XA CN200810178065A CN101460002B CN 101460002 B CN101460002 B CN 101460002B CN 200810178065X A CN200810178065X A CN 200810178065XA CN 200810178065 A CN200810178065 A CN 200810178065A CN 101460002 B CN101460002 B CN 101460002B
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China
Prior art keywords
antenna
radio frequency
passive
passive antenna
plasma
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Expired - Lifetime
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CN200810178065XA
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English (en)
Chinese (zh)
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CN101460002A (zh
Inventor
A·M·霍瓦尔德
A·库蒂
M·H·维尔科克森
A·D·拜利三世
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/29—Combinations of different interacting antenna units for giving a desired directional characteristic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q7/00—Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN200810178065XA 2002-07-22 2003-07-17 用于产生均匀的处理速率的方法和设备 Expired - Lifetime CN101460002B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/200833 2002-07-22
US10/200,833 US6842147B2 (en) 2002-07-22 2002-07-22 Method and apparatus for producing uniform processing rates

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN038225794A Division CN1689132B (zh) 2002-07-22 2003-07-17 用于产生均匀的处理速率的方法和设备

Publications (2)

Publication Number Publication Date
CN101460002A CN101460002A (zh) 2009-06-17
CN101460002B true CN101460002B (zh) 2012-07-04

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ID=30769568

Family Applications (3)

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CN200810178065XA Expired - Lifetime CN101460002B (zh) 2002-07-22 2003-07-17 用于产生均匀的处理速率的方法和设备
CN201110437893.2A Expired - Lifetime CN102573265B (zh) 2002-07-22 2003-07-17 用于产生均匀的处理速率的方法和设备
CN038225794A Expired - Lifetime CN1689132B (zh) 2002-07-22 2003-07-17 用于产生均匀的处理速率的方法和设备

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN201110437893.2A Expired - Lifetime CN102573265B (zh) 2002-07-22 2003-07-17 用于产生均匀的处理速率的方法和设备
CN038225794A Expired - Lifetime CN1689132B (zh) 2002-07-22 2003-07-17 用于产生均匀的处理速率的方法和设备

Country Status (9)

Country Link
US (1) US6842147B2 (https=)
EP (1) EP1540694B1 (https=)
JP (2) JP4928077B2 (https=)
KR (1) KR100974844B1 (https=)
CN (3) CN101460002B (https=)
AU (1) AU2003256565A1 (https=)
IL (1) IL166342A (https=)
TW (1) TWI327875B (https=)
WO (1) WO2004010457A1 (https=)

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JP2003323997A (ja) * 2002-04-30 2003-11-14 Lam Research Kk プラズマ安定化方法およびプラズマ装置
KR100486724B1 (ko) * 2002-10-15 2005-05-03 삼성전자주식회사 사행 코일 안테나를 구비한 유도결합 플라즈마 발생장치
US20050205211A1 (en) * 2004-03-22 2005-09-22 Vikram Singh Plasma immersion ion implantion apparatus and method
KR100968132B1 (ko) * 2008-02-29 2010-07-06 (주)얼라이드 테크 파인더즈 안테나 및 이를 구비한 반도체 장치
US8298949B2 (en) 2009-01-07 2012-10-30 Lam Research Corporation Profile and CD uniformity control by plasma oxidation treatment
JP5506826B2 (ja) * 2009-02-10 2014-05-28 ヘリッセン，サール 大面積プラズマ処理装置
US9337004B2 (en) * 2009-04-06 2016-05-10 Lam Research Corporation Grounded confinement ring having large surface area
US8608903B2 (en) * 2009-10-27 2013-12-17 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US8741097B2 (en) * 2009-10-27 2014-06-03 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US9313872B2 (en) * 2009-10-27 2016-04-12 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
JP5851681B2 (ja) * 2009-10-27 2016-02-03 東京エレクトロン株式会社 プラズマ処理装置
JP5592098B2 (ja) * 2009-10-27 2014-09-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5451324B2 (ja) * 2009-11-10 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置
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JP5723130B2 (ja) * 2010-09-28 2015-05-27 東京エレクトロン株式会社 プラズマ処理装置
JP5639866B2 (ja) * 2010-12-03 2014-12-10 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5781349B2 (ja) * 2011-03-30 2015-09-24 東京エレクトロン株式会社 プラズマ処理装置
US10271416B2 (en) * 2011-10-28 2019-04-23 Applied Materials, Inc. High efficiency triple-coil inductively coupled plasma source with phase control
US20130256271A1 (en) * 2012-04-03 2013-10-03 Theodoros Panagopoulos Methods and apparatuses for controlling plasma in a plasma processing chamber
JP6248562B2 (ja) * 2013-11-14 2017-12-20 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN104684235B (zh) * 2013-11-28 2017-07-07 中微半导体设备(上海)有限公司 一种电感线圈组及电感耦合等离子体处理装置
CN105719928A (zh) * 2014-12-03 2016-06-29 中微半导体设备(上海)有限公司 Icp刻蚀中对刻蚀速率非均匀性进行补偿的装置和方法
JP6603999B2 (ja) * 2015-02-13 2019-11-13 日新電機株式会社 プラズマ処理装置
KR101753620B1 (ko) 2015-03-19 2017-07-19 맷슨 테크놀로지, 인크. 플라즈마 처리 챔버에서의 에칭 프로세스의 방위 방향 균일성 제어
JP6053881B2 (ja) * 2015-07-15 2016-12-27 東京エレクトロン株式会社 プラズマ処理装置
US10128083B2 (en) * 2016-06-01 2018-11-13 Vebco Instruments Inc. Ion sources and methods for generating ion beams with controllable ion current density distributions over large treatment areas
US9899193B1 (en) * 2016-11-02 2018-02-20 Varian Semiconductor Equipment Associates, Inc. RF ion source with dynamic volume control
CN108271309B (zh) * 2016-12-30 2020-05-01 中微半导体设备(上海)股份有限公司 一种电感耦合等离子处理装置
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GB2590614B (en) 2019-12-16 2022-09-28 Dyson Technology Ltd Method and apparatus for use in generating plasma
GB2590613B (en) * 2019-12-16 2023-06-07 Dyson Technology Ltd Method and apparatus for use in generating plasma
KR20220045895A (ko) * 2020-10-06 2022-04-13 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리용 코일
JP7515423B2 (ja) * 2021-01-22 2024-07-12 東京エレクトロン株式会社 プラズマ処理装置の異常検知方法及びプラズマ処理装置
CN114845453A (zh) * 2021-02-01 2022-08-02 江苏菲沃泰纳米科技股份有限公司 Icp反应装置和icp发生器
CN114599142A (zh) * 2022-03-07 2022-06-07 盛吉盛(宁波)半导体科技有限公司 等离子体调节装置、方法、生成装置和半导体加工装置
CN115238541B (zh) * 2022-07-06 2025-08-19 南华大学 一种应用于玄龙-50装置的双鞍型天线的设计方法
US12074390B2 (en) 2022-11-11 2024-08-27 Tokyo Electron Limited Parallel resonance antenna for radial plasma control
KR102874571B1 (ko) * 2023-11-20 2025-10-22 충남대학교산학협력단 셀프 플라즈마 챔버의 가시창 오염 억제 및 제거 시스템

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Also Published As

Publication number Publication date
IL166342A (en) 2009-08-03
US20040085246A1 (en) 2004-05-06
WO2004010457A1 (en) 2004-01-29
CN102573265B (zh) 2016-01-20
CN1689132A (zh) 2005-10-26
US6842147B2 (en) 2005-01-11
TWI327875B (en) 2010-07-21
CN101460002A (zh) 2009-06-17
IL166342A0 (en) 2006-01-16
EP1540694A1 (en) 2005-06-15
TW200405768A (en) 2004-04-01
JP4928077B2 (ja) 2012-05-09
CN102573265A (zh) 2012-07-11
CN1689132B (zh) 2010-06-16
KR20050025975A (ko) 2005-03-14
KR100974844B1 (ko) 2010-08-11
AU2003256565A1 (en) 2004-02-09
EP1540694B1 (en) 2015-11-11
JP2012104496A (ja) 2012-05-31
JP2005534150A (ja) 2005-11-10

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