IL166342A - Method and device for the production of uniform processing rates - Google Patents

Method and device for the production of uniform processing rates

Info

Publication number
IL166342A
IL166342A IL166342A IL16634205A IL166342A IL 166342 A IL166342 A IL 166342A IL 166342 A IL166342 A IL 166342A IL 16634205 A IL16634205 A IL 16634205A IL 166342 A IL166342 A IL 166342A
Authority
IL
Israel
Prior art keywords
antenna
passive
field
passive antenna
field distribution
Prior art date
Application number
IL166342A
Other languages
English (en)
Hebrew (he)
Other versions
IL166342A0 (en
Inventor
Arthur M Howald
Andreas Kuthi
Mark Henry Wilcoxson
Andrew D Bailey Iii
Original Assignee
Lam Res Corp
Arthur M Howald
Andreas Kuthi
Mark Henry Wilcoxson
Andrew D Bailey Iii
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp, Arthur M Howald, Andreas Kuthi, Mark Henry Wilcoxson, Andrew D Bailey Iii filed Critical Lam Res Corp
Publication of IL166342A0 publication Critical patent/IL166342A0/xx
Publication of IL166342A publication Critical patent/IL166342A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/29—Combinations of different interacting antenna units for giving a desired directional characteristic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q7/00—Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
IL166342A 2002-07-22 2005-01-17 Method and device for the production of uniform processing rates IL166342A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/200,833 US6842147B2 (en) 2002-07-22 2002-07-22 Method and apparatus for producing uniform processing rates
PCT/US2003/022206 WO2004010457A1 (en) 2002-07-22 2003-07-17 Method and apparatus for producing uniform processing rates

Publications (2)

Publication Number Publication Date
IL166342A0 IL166342A0 (en) 2006-01-16
IL166342A true IL166342A (en) 2009-08-03

Family

ID=30769568

Family Applications (1)

Application Number Title Priority Date Filing Date
IL166342A IL166342A (en) 2002-07-22 2005-01-17 Method and device for the production of uniform processing rates

Country Status (9)

Country Link
US (1) US6842147B2 (https=)
EP (1) EP1540694B1 (https=)
JP (2) JP4928077B2 (https=)
KR (1) KR100974844B1 (https=)
CN (3) CN101460002B (https=)
AU (1) AU2003256565A1 (https=)
IL (1) IL166342A (https=)
TW (1) TWI327875B (https=)
WO (1) WO2004010457A1 (https=)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR200253559Y1 (ko) * 2001-07-30 2001-11-22 주식회사 플라즈마트 회전방향으로 균일한 플라즈마 밀도를 발생시키는유도결합형 플라즈마 발생장치의 안테나구조
JP2003323997A (ja) * 2002-04-30 2003-11-14 Lam Research Kk プラズマ安定化方法およびプラズマ装置
KR100486724B1 (ko) * 2002-10-15 2005-05-03 삼성전자주식회사 사행 코일 안테나를 구비한 유도결합 플라즈마 발생장치
US20050205211A1 (en) * 2004-03-22 2005-09-22 Vikram Singh Plasma immersion ion implantion apparatus and method
KR100968132B1 (ko) * 2008-02-29 2010-07-06 (주)얼라이드 테크 파인더즈 안테나 및 이를 구비한 반도체 장치
US8298949B2 (en) 2009-01-07 2012-10-30 Lam Research Corporation Profile and CD uniformity control by plasma oxidation treatment
JP5506826B2 (ja) * 2009-02-10 2014-05-28 ヘリッセン，サール 大面積プラズマ処理装置
US9337004B2 (en) * 2009-04-06 2016-05-10 Lam Research Corporation Grounded confinement ring having large surface area
US8608903B2 (en) * 2009-10-27 2013-12-17 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US8741097B2 (en) * 2009-10-27 2014-06-03 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US9313872B2 (en) * 2009-10-27 2016-04-12 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
JP5851681B2 (ja) * 2009-10-27 2016-02-03 東京エレクトロン株式会社 プラズマ処理装置
JP5592098B2 (ja) * 2009-10-27 2014-09-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5451324B2 (ja) * 2009-11-10 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5916044B2 (ja) * 2010-09-28 2016-05-11 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5723130B2 (ja) * 2010-09-28 2015-05-27 東京エレクトロン株式会社 プラズマ処理装置
JP5639866B2 (ja) * 2010-12-03 2014-12-10 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5781349B2 (ja) * 2011-03-30 2015-09-24 東京エレクトロン株式会社 プラズマ処理装置
US10271416B2 (en) * 2011-10-28 2019-04-23 Applied Materials, Inc. High efficiency triple-coil inductively coupled plasma source with phase control
US20130256271A1 (en) * 2012-04-03 2013-10-03 Theodoros Panagopoulos Methods and apparatuses for controlling plasma in a plasma processing chamber
JP6248562B2 (ja) * 2013-11-14 2017-12-20 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN104684235B (zh) * 2013-11-28 2017-07-07 中微半导体设备(上海)有限公司 一种电感线圈组及电感耦合等离子体处理装置
CN105719928A (zh) * 2014-12-03 2016-06-29 中微半导体设备(上海)有限公司 Icp刻蚀中对刻蚀速率非均匀性进行补偿的装置和方法
JP6603999B2 (ja) * 2015-02-13 2019-11-13 日新電機株式会社 プラズマ処理装置
KR101753620B1 (ko) 2015-03-19 2017-07-19 맷슨 테크놀로지, 인크. 플라즈마 처리 챔버에서의 에칭 프로세스의 방위 방향 균일성 제어
JP6053881B2 (ja) * 2015-07-15 2016-12-27 東京エレクトロン株式会社 プラズマ処理装置
US10128083B2 (en) * 2016-06-01 2018-11-13 Vebco Instruments Inc. Ion sources and methods for generating ion beams with controllable ion current density distributions over large treatment areas
US9899193B1 (en) * 2016-11-02 2018-02-20 Varian Semiconductor Equipment Associates, Inc. RF ion source with dynamic volume control
CN108271309B (zh) * 2016-12-30 2020-05-01 中微半导体设备(上海)股份有限公司 一种电感耦合等离子处理装置
CA3103046A1 (en) * 2018-06-17 2019-12-26 Skope Magnetic Resonance Technologies Ag Sheath wave barrier for magnetic resonance (mr) applications
US11078570B2 (en) * 2018-06-29 2021-08-03 Lam Research Corporation Azimuthal critical dimension non-uniformity for double patterning process
GB2590614B (en) 2019-12-16 2022-09-28 Dyson Technology Ltd Method and apparatus for use in generating plasma
GB2590613B (en) * 2019-12-16 2023-06-07 Dyson Technology Ltd Method and apparatus for use in generating plasma
KR20220045895A (ko) * 2020-10-06 2022-04-13 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리용 코일
JP7515423B2 (ja) * 2021-01-22 2024-07-12 東京エレクトロン株式会社 プラズマ処理装置の異常検知方法及びプラズマ処理装置
CN114845453A (zh) * 2021-02-01 2022-08-02 江苏菲沃泰纳米科技股份有限公司 Icp反应装置和icp发生器
CN114599142A (zh) * 2022-03-07 2022-06-07 盛吉盛(宁波)半导体科技有限公司 等离子体调节装置、方法、生成装置和半导体加工装置
CN115238541B (zh) * 2022-07-06 2025-08-19 南华大学 一种应用于玄龙-50装置的双鞍型天线的设计方法
US12074390B2 (en) 2022-11-11 2024-08-27 Tokyo Electron Limited Parallel resonance antenna for radial plasma control
KR102874571B1 (ko) * 2023-11-20 2025-10-22 충남대학교산학협력단 셀프 플라즈마 챔버의 가시창 오염 억제 및 제거 시스템

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5401350A (en) * 1993-03-08 1995-03-28 Lsi Logic Corporation Coil configurations for improved uniformity in inductively coupled plasma systems
US5731565A (en) * 1995-07-27 1998-03-24 Lam Research Corporation Segmented coil for generating plasma in plasma processing equipment
US5907221A (en) * 1995-08-16 1999-05-25 Applied Materials, Inc. Inductively coupled plasma reactor with an inductive coil antenna having independent loops
US5759280A (en) * 1996-06-10 1998-06-02 Lam Research Corporation Inductively coupled source for deriving substantially uniform plasma flux
US5897712A (en) * 1996-07-16 1999-04-27 Applied Materials, Inc. Plasma uniformity control for an inductive plasma source
KR100372317B1 (ko) * 1997-03-17 2003-05-16 마쯔시다덴기산교 가부시키가이샤 플라즈마처리방법및장치
US6237526B1 (en) * 1999-03-26 2001-05-29 Tokyo Electron Limited Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
US6310577B1 (en) * 1999-08-24 2001-10-30 Bethel Material Research Plasma processing system with a new inductive antenna and hybrid coupling of electronagnetic power
US6341574B1 (en) * 1999-11-15 2002-01-29 Lam Research Corporation Plasma processing systems
US6320320B1 (en) * 1999-11-15 2001-11-20 Lam Research Corporation Method and apparatus for producing uniform process rates
US6508198B1 (en) * 2000-05-11 2003-01-21 Applied Materials Inc. Automatic tuning in a tapped RF transformer inductive source of a plasma reactor for processing a semiconductor wafer
US6414648B1 (en) * 2000-07-06 2002-07-02 Applied Materials, Inc. Plasma reactor having a symmetric parallel conductor coil antenna
JP2003234338A (ja) * 2002-02-08 2003-08-22 Tokyo Electron Ltd 誘導結合プラズマ処理装置

Also Published As

Publication number Publication date
US20040085246A1 (en) 2004-05-06
CN101460002B (zh) 2012-07-04
WO2004010457A1 (en) 2004-01-29
CN102573265B (zh) 2016-01-20
CN1689132A (zh) 2005-10-26
US6842147B2 (en) 2005-01-11
TWI327875B (en) 2010-07-21
CN101460002A (zh) 2009-06-17
IL166342A0 (en) 2006-01-16
EP1540694A1 (en) 2005-06-15
TW200405768A (en) 2004-04-01
JP4928077B2 (ja) 2012-05-09
CN102573265A (zh) 2012-07-11
CN1689132B (zh) 2010-06-16
KR20050025975A (ko) 2005-03-14
KR100974844B1 (ko) 2010-08-11
AU2003256565A1 (en) 2004-02-09
EP1540694B1 (en) 2015-11-11
JP2012104496A (ja) 2012-05-31
JP2005534150A (ja) 2005-11-10

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