CN101458337A - 基于绝缘体上硅的双探头pmos辐射剂量计 - Google Patents
基于绝缘体上硅的双探头pmos辐射剂量计 Download PDFInfo
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CN2007101793547A CN101458337B (zh) | 2007-12-12 | 2007-12-12 | 基于绝缘体上硅的双探头pmos辐射剂量计 |
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CN2007101793547A CN101458337B (zh) | 2007-12-12 | 2007-12-12 | 基于绝缘体上硅的双探头pmos辐射剂量计 |
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CN2010102569521A Division CN101937091B (zh) | 2007-12-12 | 2007-12-12 | 一种可调整量程的堆叠测量电路 |
CN201010256968A Division CN101907719B (zh) | 2007-12-12 | 2007-12-12 | 一种对双探头pmos辐射剂量计进行退火的方法 |
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CN101458337A true CN101458337A (zh) | 2009-06-17 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101931008A (zh) * | 2010-07-13 | 2010-12-29 | 中国科学院上海微系统与信息技术研究所 | 一种具有体接触结构的pd soi器件 |
CN102466806A (zh) * | 2010-11-03 | 2012-05-23 | 中国科学院微电子研究所 | 一种基于绝缘体上硅的pmos辐射剂量计 |
CN102997944A (zh) * | 2011-09-08 | 2013-03-27 | 飞思卡尔半导体公司 | 入射电容式传感器 |
CN103698796A (zh) * | 2013-11-28 | 2014-04-02 | 兰州空间技术物理研究所 | 一种航天器舱外辐射剂量测量装置 |
CN106802427A (zh) * | 2016-12-19 | 2017-06-06 | 中国科学院新疆理化技术研究所 | 一种基于soi结构的电离总剂量探测系统及方法 |
CN113109858A (zh) * | 2021-04-13 | 2021-07-13 | 中北大学 | 一种高度集成的γ辐照探测器 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6906387B1 (en) * | 2003-10-15 | 2005-06-14 | Altera Corporation | Method for implementing electro-static discharge protection in silicon-on-insulator devices |
US7288443B2 (en) * | 2004-06-29 | 2007-10-30 | International Business Machines Corporation | Structures and methods for manufacturing p-type MOSFET with graded embedded silicon-germanium source-drain and/or extension |
JP2006073627A (ja) * | 2004-08-31 | 2006-03-16 | Toshiba Corp | 半導体集積装置 |
TW200629554A (en) * | 2004-10-14 | 2006-08-16 | Koninkl Philips Electronics Nv | A MOSFET for high voltage applications and a method of fabricating same |
CN1296725C (zh) * | 2004-11-17 | 2007-01-24 | 中国科学院新疆理化技术研究所 | 对管式差分输出pmos辐射剂量计及其制备方法 |
JP4987309B2 (ja) * | 2005-02-04 | 2012-07-25 | セイコーインスツル株式会社 | 半導体集積回路装置とその製造方法 |
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2007
- 2007-12-12 CN CN2007101793547A patent/CN101458337B/zh active Active
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101931008A (zh) * | 2010-07-13 | 2010-12-29 | 中国科学院上海微系统与信息技术研究所 | 一种具有体接触结构的pd soi器件 |
CN101931008B (zh) * | 2010-07-13 | 2015-04-08 | 中国科学院上海微系统与信息技术研究所 | 一种具有体接触结构的pd soi器件 |
CN102466806A (zh) * | 2010-11-03 | 2012-05-23 | 中国科学院微电子研究所 | 一种基于绝缘体上硅的pmos辐射剂量计 |
CN102997944A (zh) * | 2011-09-08 | 2013-03-27 | 飞思卡尔半导体公司 | 入射电容式传感器 |
CN102997944B (zh) * | 2011-09-08 | 2016-11-23 | 飞思卡尔半导体公司 | 入射电容式传感器 |
CN103698796A (zh) * | 2013-11-28 | 2014-04-02 | 兰州空间技术物理研究所 | 一种航天器舱外辐射剂量测量装置 |
CN106802427A (zh) * | 2016-12-19 | 2017-06-06 | 中国科学院新疆理化技术研究所 | 一种基于soi结构的电离总剂量探测系统及方法 |
CN106802427B (zh) * | 2016-12-19 | 2019-05-31 | 中国科学院新疆理化技术研究所 | 一种基于soi结构的电离总剂量探测系统及方法 |
CN113109858A (zh) * | 2021-04-13 | 2021-07-13 | 中北大学 | 一种高度集成的γ辐照探测器 |
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