CN101937091B - 一种可调整量程的堆叠测量电路 - Google Patents
一种可调整量程的堆叠测量电路 Download PDFInfo
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- CN101937091B CN101937091B CN2010102569521A CN201010256952A CN101937091B CN 101937091 B CN101937091 B CN 101937091B CN 2010102569521 A CN2010102569521 A CN 2010102569521A CN 201010256952 A CN201010256952 A CN 201010256952A CN 101937091 B CN101937091 B CN 101937091B
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CN2010102569521A CN101937091B (zh) | 2007-12-12 | 2007-12-12 | 一种可调整量程的堆叠测量电路 |
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CN2010102569521A CN101937091B (zh) | 2007-12-12 | 2007-12-12 | 一种可调整量程的堆叠测量电路 |
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CN2007101793547A Division CN101458337B (zh) | 2007-12-12 | 2007-12-12 | 基于绝缘体上硅的双探头pmos辐射剂量计 |
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CN101937091A CN101937091A (zh) | 2011-01-05 |
CN101937091B true CN101937091B (zh) | 2012-07-25 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104345327B (zh) * | 2014-10-29 | 2017-04-05 | 中国科学院微电子研究所 | 辐射探测电路 |
CN111008506B (zh) * | 2019-11-30 | 2023-04-07 | 中国科学院新疆理化技术研究所 | 一种基于阈值电压类型匹配的6-t存储单元抗总剂量加固方法 |
CN113391339B (zh) * | 2021-07-13 | 2024-01-12 | 陕西迪泰克新材料有限公司 | 一种辐射剂量监测装置及其监测方法和制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1605886A (zh) * | 2004-11-17 | 2005-04-13 | 中国科学院新疆理化技术研究所 | 对管式差分输出pmos辐射剂量计 |
US6906387B1 (en) * | 2003-10-15 | 2005-06-14 | Altera Corporation | Method for implementing electro-static discharge protection in silicon-on-insulator devices |
CN1716554A (zh) * | 2004-06-29 | 2006-01-04 | 国际商业机器公司 | 一种p型mosfet的结构及其制作方法 |
CN1744321A (zh) * | 2004-08-31 | 2006-03-08 | 株式会社东芝 | 半导体集成器件 |
CN1819203A (zh) * | 2005-02-04 | 2006-08-16 | 精工电子有限公司 | 半导体集成电路器件及其制造方法 |
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- 2007-12-12 CN CN2010102569521A patent/CN101937091B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6906387B1 (en) * | 2003-10-15 | 2005-06-14 | Altera Corporation | Method for implementing electro-static discharge protection in silicon-on-insulator devices |
CN1716554A (zh) * | 2004-06-29 | 2006-01-04 | 国际商业机器公司 | 一种p型mosfet的结构及其制作方法 |
CN1744321A (zh) * | 2004-08-31 | 2006-03-08 | 株式会社东芝 | 半导体集成器件 |
CN1605886A (zh) * | 2004-11-17 | 2005-04-13 | 中国科学院新疆理化技术研究所 | 对管式差分输出pmos辐射剂量计 |
CN1819203A (zh) * | 2005-02-04 | 2006-08-16 | 精工电子有限公司 | 半导体集成电路器件及其制造方法 |
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CN101937091A (zh) | 2011-01-05 |
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Owner name: BEIJING CAS MICRO-INVESTMENT MANAGEMENT CO., LTD. Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20131126 |
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Effective date of registration: 20131126 Address after: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3, building 15, room 328 Patentee after: Beijing Zhongke micro Investment Management Co., Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
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Owner name: BEIJING ZHONGKE NEWMICROT TECHNOLOGY DEVELOPMENT C Free format text: FORMER OWNER: BEIJING CAS MICRO-INVESTMENT MANAGEMENT CO., LTD. Effective date: 20140107 |
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Effective date of registration: 20140107 Address after: 100029 Beijing city Chaoyang District Beitucheng No. 11 Institute of microelectronics building 4 layer Patentee after: Beijing Zhongke Newmicrot Technology Development Co., Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3, building 15, room 328 Patentee before: Beijing Zhongke micro Investment Management Co., Ltd. |