CN101457395B - High-frequency coil structure capable of simultaneous producing three silicon cores and other crystal material - Google Patents
High-frequency coil structure capable of simultaneous producing three silicon cores and other crystal material Download PDFInfo
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- CN101457395B CN101457395B CN2008101820587A CN200810182058A CN101457395B CN 101457395 B CN101457395 B CN 101457395B CN 2008101820587 A CN2008101820587 A CN 2008101820587A CN 200810182058 A CN200810182058 A CN 200810182058A CN 101457395 B CN101457395 B CN 101457395B
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Abstract
The invention discloses a high-frequency coil structure capable of simultaneously producing three silicon cores and other crystalline materials, and relates to the technical field of the high-frequency coils. The high-frequency coil structure comprises a 'T'-shaped splitter box (14) and splitter boxes (15) for guiding current (16), and three inner bores (8) are triangularly arranged at the middle part of the high-frequency coil (3); an oblique opening (13) arranged on one side of a current delivery and cooling water delivery copper pipe A(11) and a current delivery and cooling water delivery copper pipe B(12) is connected with any one inner bore (8); and the inner bore connected with the oblique opening is provide with the 'T'-shaped splitter box passing through the two inner bores between the other two inner bores, and the two sides of the inner bore connected with the oblique opening are provide with the splitter boxes (15) respectively. The high-frequency coil structure causes the current to evenly surround the three inner bores under the action of the 'T'-shaped splitter box while the current is running, and the splitter boxes assist in distributing the current more evenly around the three inner bores, thus realizing the purpose that the current is evenly distributed around the three inner bores.
Description
Technical field:
The present invention relates to the radio-frequency coil technical field, especially relate to a kind of electric current that makes and be evenly distributed on around the endoporus, by electric current silicon core or other crystalline material are heated evenly, and can produce the novel high-frequency loop construction of three silicon cores and other crystalline material simultaneously.
Background technology:
At present, usage quantity is very huge at home for the silicon core; In the technological process that the molten mode in existing silicon core, silicon single crystal and other material crystals district is produced, what use mostly is a kind of monocular radio-frequency coil, its principle of work is as follows: pass through during work to feed high-frequency current to radio-frequency coil, make radio-frequency coil produce electric current fuel rod is carried out induction heating, fuel rod upper end after the heating forms melt zone, then with the brilliant melting area of inserting of son, slowly promote young brilliant, raw material after the fusing will be followed young brilliant the rising, form a new pillar-shaped crystal, this new pillar-shaped crystal is the finished product of silicon core or other material crystals.
I am by repeatedly experiment discovery, because layout is unreasonable; As my four utility model patents in first to file;
Wherein patent 1: patent name, a kind of radio-frequency coil that once can produce three silicon cores or other crystalline material; The applying date, on January 19th, 2007; Granted publication number, CN200999270Y;
Wherein patent 2: patent name, can produce the radio-frequency coil of three silicon cores or other crystalline material simultaneously; The applying date, on January 19th, 2007; Granted publication number, CN201001208Y;
Wherein patent 3: patent name, a kind of radio-frequency coil that once can produce three silicon cores or other crystalline material; The applying date, on February 13rd, 2007; Granted publication number, CN201024224Y;
Wherein patent 4: patent name, a kind of radio-frequency coil that once can produce three silicon cores or other crystalline material; The applying date, on February 13rd, 2007; Granted publication number, CN201024227Y;
Above-mentioned patent is by this use in 2 years, electric current operation around endoporus does not reach its intended purposes, as the structure of being explained in above-mentioned four patent application documents, no matter endoporus is that the straight line point-like is arranged, still be triangularly arranged, electric current is around three endoporus operations the time, all can occur away from the endoporus electric current operation of diagonal cut joint less, another one or two endoporus be subjected to the influence of high-frequency current operation logic around electric current, make the temperature of part endoporus far above temperature (just electric current takes a shorter way) away from the diagonal cut joint endoporus, because the phenomenon that takes a shorter way of electric current, the consequence that is produced is that the young brilliant diameter great disparity that raises up is very big, thereby causes the increase of defect ware quantity.
Summary of the invention:
In order to overcome the deficiency in the background technology, the invention discloses a kind of high-frequency coil structure that can produce three silicon cores and other crystalline material simultaneously, "T"-shaped splitter box and the splitter box of the present invention by being provided with in the diagonal cut joint vertical direction, owing to added " T " splitter box and splitter box, under the effect of "T"-shaped splitter box, evenly center on three endoporus when making the electric current operation, and the splitter box auxiliary current more is evenly distributed in around three endoporus, has realized electric current equally distributed purpose around three endoporus.
In order to realize the purpose of foregoing invention, the present invention adopts following technical scheme:
A kind of high-frequency coil structure that can produce three silicon cores and other crystalline material simultaneously, described high-frequency coil structure is provided with the electric current conveying in the bottom of radio-frequency coil and water coolant carries copper pipe A and electric current to carry and water coolant is carried copper pipe B, be the inclined-plane that caves in to the central position above the radio-frequency coil of radio-frequency coil, be provided with below the radio-frequency coil of radio-frequency coil to the central position cave in trapezoidal, the cooling water channel ring is embedded in the outside of radio-frequency coil; Described high-frequency coil structure comprises "T"-shaped splitter box and the splitter box that is used for the electric current water conservancy diversion, three endoporus are triangularly arranged at the middle part of radio-frequency coil, carry copper pipe A and electric current conveying and water coolant to carry the diagonal cut joint of copper pipe B one side to connect arbitrary endoporus in electric current conveying and water coolant, the endoporus that connects diagonal cut joint is provided with the "T"-shaped splitter box that passes two endoporus between other two endoporus, the endoporus both sides of described connection diagonal cut joint are provided with splitter box.
The described high-frequency coil structure that can produce three silicon cores and other crystalline material simultaneously, described endoporus can be set to rounding of angle endoporus, trilateral endoporus, the interior rounding of angle endoporus of trilateral, Polygons endoporus, irregular polygon endoporus, rhombus endoporus, the interior rounding of angle endoporus of rhombus, trapezoidal endoporus, trapezoidal interior rounding of angle endoporus, Long Circle endoporus or oval endoporus in circular inner hole, square inner bore, square interior rounding of angle endoporus, rectangle endoporus, the rectangle.
Because adopt technique scheme, the present invention has following superiority:
The present invention is by being provided with "T"-shaped splitter box and splitter box on the endoporus of diagonal cut joint vertical direction, owing to added "T"-shaped splitter box and splitter box, can't steer clear of two endoporus far away when making the electric current operation apart from diagonal cut joint, reach test by experiment, proved that the present invention improves after-current and can move around each endoporus uniformly under the water conservancy diversion of "T"-shaped splitter box and splitter box, the Heating temperature of three endoporus is basic identical, realized electric current equally distributed purpose around three endoporus, improve capacity usage ratio, reduce production costs and reduce fraction defective; The present invention and have homogeneous heating, a large amount of save energy, reduce advantages such as facility investment and artificial comprehensive cost can effectively reduce is easy in the promotion and implementation of polysilicon industry.
Description of drawings:
Fig. 1 is an electric current distribution diagram of the present invention.
Fig. 2 is a two dimensional structure synoptic diagram of the present invention.
Fig. 3 is the A-A diagrammatic sketch of Fig. 2.
Fig. 4 is a principle of work synoptic diagram of the present invention.
In the drawings: 1, fuel rod; 2, magnetic line of force; 3, radio-frequency coil; 4, cooling water channel; 5, silicon core; 6, young brilliant; 7, young brilliant chuck; 8, endoporus; 9, above the radio-frequency coil; 10, below the radio-frequency coil; 11, electric current is carried and water coolant conveying copper pipe A; 12, electric current is carried and water coolant conveying copper pipe B; 13, diagonal cut joint; 14, "T"-shaped splitter box; 15, splitter box; 16, electric current.
Embodiment:
With reference to the following examples, can explain the present invention in more detail; But the present invention is not limited to these embodiment.
In Fig. 1,2,3,4; A kind of high-frequency coil structure that can produce three silicon cores and other crystalline material simultaneously, described high-frequency coil structure is provided with the electric current conveying in the bottom of radio-frequency coil and water coolant carries copper pipe A11 and electric current to carry and water coolant is carried copper pipe B12,9 are the inclined-plane that caves in to the central position above the radio-frequency coil of radio-frequency coil, be provided with below the radio-frequency coil of radio-frequency coil to the central position cave in trapezoidal, cooling water channel 4 ring is embedded in the outside of radio-frequency coil 3; Described high-frequency coil structure comprises "T"-shaped splitter box 14 and the splitter box 15 that is used for electric current 16 water conservancy diversion, three endoporus 8 are triangularly arranged at the middle part of radio-frequency coil 3, carry copper pipe A11 and electric current conveying and water coolant to carry the diagonal cut joint 13 of copper pipe B12 one side to connect arbitrary endoporus 8 in electric current conveying and water coolant, the endoporus 8 that connects diagonal cut joint 13 is provided with the "T"-shaped splitter box 14 that passes two endoporus 8 between other two endoporus 8, endoporus 8 both sides of described connection diagonal cut joint 13 are provided with splitter box 15.
The described high-frequency coil structure that can produce three silicon cores and other crystalline material simultaneously, described endoporus 8 can be set to rounding of angle endoporus 8, trilateral endoporus 8, the interior rounding of angle endoporus 8 of trilateral, Polygons endoporus 8, irregular polygon endoporus 8, rhombus endoporus 8, the interior rounding of angle endoporus 8 of rhombus, trapezoidal endoporus 8, trapezoidal interior rounding of angle endoporus 8, Long Circle endoporus 8 or oval endoporus 8 in circular inner hole 8, square inner bore 8, square interior rounding of angle endoporus 8, rectangle endoporus 8, the rectangle.
Use is as described below: in Fig. 4, earlier fuel rod 1 is delivered to radio-frequency coil 3 bottoms, fuel rod 1 is near more good more apart from radio-frequency coil 3, but must not contact with radio-frequency coil 3, electric current on radio-frequency coil 3 is carried and water coolant carries copper pipe A11 energising to send water and another root electric current to carry and water coolant is carried copper pipe B12 energising draining then, electric current 16 impels radio-frequency coil 3 to produce powerful magnetic line of force 2, make raw material silicon rod 1 upper end utilize magnetic line of force 2 to carry out induction heating near the part of coil, the water coolant that flows through in the cooling water channel 4 gives radio-frequency coil 3 coolings, and diagonal cut joint 13 is made angle and is used to pass to one of them endoporus 8.
In Fig. 1,2 or 4, the endoporus 8 that connects diagonal cut joint 13 is provided with the "T"-shaped splitter box 14 that passes two endoporus 8 between other two endoporus 8, be provided with splitter box 15 in endoporus 8 both sides that connect diagonal cut joint 13, "T"-shaped splitter box 14 and splitter box 15 impel electric current 16 uniformly around 8 operations of three endoporus, its major function is to make fuel rod 1 thermally equivalent in order to make high-frequency current can form to intersect at boundary, and can realize the effect of auxiliaryization material; After melt at 10 position below the close radio-frequency coil in the termination of raw material silicon rod 1, young brilliant chuck 7 is being with young brilliant 6 to descend, make young brilliant 6 melting areas by four endoporus, 8 back insertion fuel rods 1, promote young brilliant 6 then, the melt cognition on fuel rod 1 top is followed young brilliant 6 and is risen, also corresponding the following synchronously of the lower shaft of its fuel rod 1 bottom slowly risen, but its fuel rod 1 must not contact with radio-frequency coil 3; Because the end of fuel rod 1 may be not too smooth, so, 10 are designed to the step that caves in below the radio-frequency coil, its role is to make as much as possible the bottom surfaces 10 of raw material silicon rod more than 1 near radio-frequency coil, it is 9 slopes that are designed to from outside to inside above radio-frequency coil, its effect is can reduce high-frequency current too the concentrating of middle part, and makes its uniform distribution on radio-frequency coil 3, with the effect that realizes being heated evenly; The melting area on raw material silicon rod 1 top is in the sticking and drive of young crystalline substance 6 and by behind radio-frequency coil 3 endoporus 8, because weakening and condensation of magnetic line of force 2, just form a new column type crystal, its young brilliant chuck 7 is carried young brilliant 6 secretly and is slowly risen, and just can form the finished silicon core 5 of desired length.
The embodiment that selects for use in this article in order to disclose purpose of the present invention currently thinks to suit, but making of should be appreciated that, and the present invention is intended to comprise that all belong to all changes and the improvement of the interior embodiment of this design and the scope of the invention.
Claims (1)
1. the high-frequency coil structure that can produce three silicon cores or other crystalline material simultaneously, described high-frequency coil structure is provided with the electric current conveying in the bottom of radio-frequency coil and water coolant carries copper pipe A (11) and electric current to carry and water coolant is carried copper pipe B (12), (9) are the inclined-plane that caves in to the central position above the radio-frequency coil of radio-frequency coil, be provided with below the radio-frequency coil of radio-frequency coil to the central position cave in trapezoidal, cooling water channel (4) ring is embedded in the outside of radio-frequency coil (3); It is characterized in that: described high-frequency coil structure comprises splitter box (15) and the "T"-shaped splitter box (14) that is used for electric current (16) water conservancy diversion, three endoporus (8) are triangularly arranged at the middle part of radio-frequency coil (3), carry copper pipe A (11) and electric current conveying and water coolant to carry the diagonal cut joint (13) of copper pipe B (12) one sides to connect immediate endoporus (8) in three endoporus (8) in electric current conveying and water coolant, the "T"-shaped splitter box (14) that endoporus (8) opposite side that connects at diagonal cut joint (13) is provided with, the bottom of just "T"-shaped splitter box (14) connects with the endoporus that is connected diagonal cut joint (13) (8), two endoporus (8) are located at the both sides of "T"-shaped splitter box (14) in addition, and endoporus (8) both sides of described connection diagonal cut joint (13) are respectively equipped with splitter box (15).
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101820587A CN101457395B (en) | 2008-11-25 | 2008-11-25 | High-frequency coil structure capable of simultaneous producing three silicon cores and other crystal material |
| EP09828609.9A EP2366814A4 (en) | 2008-11-25 | 2009-11-06 | High-frequency coil pulling holes arrangement for producing multiple silicon cores |
| JP2011529439A JP5313354B2 (en) | 2008-11-25 | 2009-11-06 | Arrangement of high-frequency coil drawing holes for manufacturing multiple silicon cores |
| PCT/CN2009/074838 WO2010060349A1 (en) | 2008-11-25 | 2009-11-06 | High-frequency coil pulling holes arrangement for producing multiple silicon cores |
| KR1020107026853A KR101324582B1 (en) | 2008-11-25 | 2009-11-06 | High-frequency coil pulling holes arrangement for producing multiple silicon cores |
| US13/125,973 US20110204044A1 (en) | 2008-11-25 | 2009-11-06 | High-frequency coil pulling holes arrangement for producing multiple silicon cores |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101820587A CN101457395B (en) | 2008-11-25 | 2008-11-25 | High-frequency coil structure capable of simultaneous producing three silicon cores and other crystal material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101457395A CN101457395A (en) | 2009-06-17 |
| CN101457395B true CN101457395B (en) | 2011-07-27 |
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| CN2008101820587A Expired - Fee Related CN101457395B (en) | 2008-11-25 | 2008-11-25 | High-frequency coil structure capable of simultaneous producing three silicon cores and other crystal material |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP5313354B2 (en) * | 2008-11-25 | 2013-10-09 | ルオヤン ジンヌオ メカニカル エンジニアリング カンパニー リミテッド | Arrangement of high-frequency coil drawing holes for manufacturing multiple silicon cores |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201001208Y (en) * | 2007-01-19 | 2008-01-02 | 刘朝轩 | High-frequency coil capable of meanwhile producing three silicon cores or other crystal materials |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201001208Y (en) * | 2007-01-19 | 2008-01-02 | 刘朝轩 | High-frequency coil capable of meanwhile producing three silicon cores or other crystal materials |
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| CN101457395A (en) | 2009-06-17 |
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| C14 | Grant of patent or utility model | ||
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Owner name: LUOYANG JINNUO MACHINERY ENGINEERING CO., LTD. Free format text: FORMER OWNER: LIU ZHAOXUAN Effective date: 20111115 |
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| C41 | Transfer of patent application or patent right or utility model | ||
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Free format text: CORRECT: ADDRESS; FROM: 471000 LUOYANG, HENAN PROVINCE TO: 471009 LUOYANG, HENAN PROVINCE |
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Effective date of registration: 20111115 Address after: 471009 Jin Xin of Henan Province, Luoyang national hi tech Industrial Development Zone, Road No. 2 Luoyang Jinnuo Machinery Engineering Co Ltd Patentee after: LUOYANG JINNUO MECHANICAL ENGINEERING Co.,Ltd. Address before: 471000 Henan province Luoyang Xigong Road No. 1, No. 24 Jiashuyuan monocrystalline silicon factory building 1 unit 101 room Patentee before: Liu Chaoxuan |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110727 Termination date: 20211125 |