CN101457388B - High-frequency coil structure capable of simultaneous producing two silicon cores and other crystal material - Google Patents
High-frequency coil structure capable of simultaneous producing two silicon cores and other crystal material Download PDFInfo
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- CN101457388B CN101457388B CN2008101820002A CN200810182000A CN101457388B CN 101457388 B CN101457388 B CN 101457388B CN 2008101820002 A CN2008101820002 A CN 2008101820002A CN 200810182000 A CN200810182000 A CN 200810182000A CN 101457388 B CN101457388 B CN 101457388B
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Abstract
The invention discloses a high-frequency coil structure capable of simultaneously producing two silicon cores and other crystalline materials, and relates to the technical field of the high-frequency coils. The high-frequency coil structure comprises an extended oblique opening (13) for guiding current (16), inner bores (8) are arranged at the middle part of the high-frequency coil (3), the oblique opening (13) arranged on one side of a current delivery and cooling water delivery copper pipe A(11) and a current delivery and cooling water delivery copper pipe B(12) passes through the two inner bores (8), and the upper end of the oblique opening (13) is higher than the upper ends of the inner bores (8). On the basis that the oblique opening passes through the two inner bores, an upper splitter box can be also added at the upper end of the oblique opening and a lower splitter box can be also added at the middle-lower part of the oblique opening; and as the oblique opening passes through the upper ends of the two inner bores, and the upper splitter box and the lower splitter box are added, which causes the current to be evenly distributed to the left inner bore and the right inner bore during running, thus realizing the purpose that the current is evenly distributed around the two inner bores.
Description
Technical field:
The present invention relates to the radio-frequency coil technical field, especially relate to a kind of electric current that makes and be evenly distributed on around the endoporus, by electric current silicon core or other crystalline material are heated evenly, and can produce the novel high-frequency loop construction of two silicon cores and other crystalline material simultaneously.
Background technology:
At present, usage quantity is very huge at home for the silicon core; In the technological process that the molten mode in existing silicon core, silicon single crystal and other material crystals district is produced, what use mostly is a kind of monocular radio-frequency coil, its principle of work is as follows: pass through during work to feed high-frequency current to radio-frequency coil, make radio-frequency coil produce electric current fuel rod is carried out induction heating, fuel rod upper end after the heating forms melt zone, then with the brilliant melting area of inserting of son, slowly promote young brilliant, raw material after the fusing will be followed young brilliant the rising, form a new pillar-shaped crystal, this new pillar-shaped crystal is the finished product of silicon core or other material crystals.
I am by repeatedly experiment discovery, because layout is unreasonable; As my three utility model patents in first to file; Wherein patent 1: patent name, once can produce the binocular radio-frequency coil of two silicon cores or other crystalline material; The applying date, on April 14th, 2006; Granted publication number, CN2926264Y; Wherein patent 2: patent name, a kind of radio-frequency coil that once can produce two silicon cores or other crystalline material; The applying date, on January 19th, 2007; Granted publication number, CN201001211Y; Wherein patent 3: patent name, a kind of radio-frequency coil that once can produce two silicon cores or other crystalline material; The applying date, on February 13rd, 2007; Granted publication number, CN201024223Y.
By this use in 2 years, the electric current operation of discovery around endoporus do not reach its intended purposes, as above-mentioned three patents, electric current is around two endoporus operations the time, in the time of the electric current operation of endoporus can occurring, the electric current of the endoporus far away apart from diagonal cut joint is subjected to the influence of high-frequency current operation logic, make this apart from the temperature of diagonal cut joint endoporus far away far below another endoporus (that is to say that electric current takes a shorter way), because the phenomenon that takes a shorter way of electric current, the consequence that is produced is that the brilliant diameter great disparity of two sons that raises up is very big, thereby causes the increase of defect ware quantity.
Summary of the invention:
In order to overcome the deficiency in the background technology, the invention discloses a kind of high-frequency coil structure that can produce two silicon cores and other crystalline material simultaneously, the present invention passes between two endoporus by making diagonal cut joint, the height of diagonal cut joint is higher than the upper end of two endoporus, also can be on adding in diagonal cut joint upper end on the above-mentioned basis splitter box, splitter box under the interpolation of the middle and lower part of diagonal cut joint, owing to the height of diagonal cut joint has been surpassed the upper end of two endoporus, and on having added, following splitter box, a left side is given in uniformly distributing when making the electric current operation, right two endoporus have been realized electric current equally distributed purpose around two endoporus.
In order to realize the purpose of foregoing invention, the present invention adopts following technical scheme:
A kind of high-frequency coil structure that can produce two silicon cores and other crystalline material simultaneously, described high-frequency coil structure is provided with the electric current conveying in the bottom of radio-frequency coil and water coolant carries copper pipe A and electric current to carry and water coolant is carried copper pipe B, be the inclined-plane that caves in to the central position above the radio-frequency coil of radio-frequency coil, be provided with below the radio-frequency coil of radio-frequency coil to the central position cave in trapezoidal, the cooling water channel ring is embedded in the outside of radio-frequency coil; Described high-frequency coil structure comprises the diagonal cut joint lengthening that is used for the electric current water conservancy diversion, endoporus is arranged on the middle part of radio-frequency coil, carry copper pipe A and electric current conveying and water coolant to carry the diagonal cut joint of copper pipe B one side to pass two endoporus in electric current conveying and water coolant, the upper end of diagonal cut joint is higher than the upper end of endoporus.
The described high-frequency coil structure that can produce two silicon cores and other crystalline material simultaneously, described diagonal cut joint upper end can be provided with splitter box.
The described high-frequency coil structure that can produce two silicon cores and other crystalline material simultaneously, the middle and lower part of described diagonal cut joint can be provided with down splitter box.
The described high-frequency coil structure that can produce two silicon cores and other crystalline material simultaneously, the following splitter box of last splitter box that described diagonal cut joint upper end is provided with and middle and lower part setting can be provided with wherein arbitrary separately.
The described high-frequency coil structure that can produce two silicon cores and other crystalline material simultaneously, the following splitter box that last splitter box that described diagonal cut joint upper end is provided with and middle and lower part are provided with can be provided with simultaneously.
Described endoporus can be set to rounding of angle endoporus, trilateral endoporus, the interior rounding of angle endoporus of trilateral, Polygons endoporus, irregular polygon endoporus, rhombus endoporus, the interior rounding of angle endoporus of rhombus, trapezoidal endoporus, trapezoidal interior rounding of angle endoporus, Long Circle endoporus or oval endoporus in circular inner hole, square inner bore, square interior rounding of angle endoporus, rectangle endoporus, the rectangle.
Because adopt technique scheme, the present invention has following superiority:
The present invention passes between two endoporus by making diagonal cut joint, also can be on adding in diagonal cut joint upper end on the above-mentioned basis splitter box, splitter box under the interpolation of the middle and lower part of diagonal cut joint, owing to the height of diagonal cut joint is surpassed the upper end of two endoporus, and on having added, following splitter box, a left side is given in uniformly distributing when making the electric current operation, right two endoporus, reach test by experiment, proved that the present invention improves after-current and can move around two endoporus uniformly, the Heating temperature of two endoporus is basic identical, realized electric current equally distributed purpose around two endoporus, improve capacity usage ratio, reduce production costs and reduce fraction defective; The present invention and have homogeneous heating, a large amount of save energy, reduce advantages such as facility investment and artificial comprehensive cost can effectively reduce is easy in the promotion and implementation of polysilicon industry.
Description of drawings:
Fig. 1 is the electric current distribution diagram of one embodiment of the present of invention.
Fig. 2 is a two dimensional structure synoptic diagram of the present invention.
Fig. 3 is the electric current distribution diagram of an alternative embodiment of the invention.
Fig. 4 is the two dimensional structure synoptic diagram of another embodiment of the present invention.
Fig. 5 is the A-A diagrammatic sketch of Fig. 4.
Fig. 6 is a principle of work synoptic diagram of the present invention.
In the drawings: 1, fuel rod; 2, magnetic line of force; 3, radio-frequency coil; 4, cooling water channel; 5, silicon core; 6, young brilliant; 7, young brilliant chuck; 8, endoporus; 9, above the radio-frequency coil; 10, below the radio-frequency coil; 11, electric current is carried and water coolant conveying copper pipe A; 12, electric current is carried and water coolant conveying copper pipe B; 13, diagonal cut joint; 14, go up splitter box; 15, following splitter box; 16, electric current.
Embodiment:
With reference to the following examples, can explain the present invention in more detail; But the present invention is not limited to these embodiment.
In Fig. 1,2,6; A kind of high-frequency coil structure that can produce two silicon cores and other crystalline material simultaneously, described high-frequency coil structure is provided with the electric current conveying in the bottom of radio-frequency coil and water coolant carries copper pipe A11 and electric current to carry and water coolant is carried copper pipe B12,9 are the inclined-plane that caves in to the central position above the radio-frequency coil of radio-frequency coil, be provided with below the radio-frequency coil of radio-frequency coil to the central position cave in trapezoidal, cooling water channel 4 ring is embedded in the outside of radio-frequency coil 3; Described high-frequency coil structure comprises diagonal cut joint 13 lengthenings that are used for electric current 16 water conservancy diversion, endoporus 8 is arranged on the middle part of radio-frequency coil 3, carry copper pipe A11 and electric current conveying and water coolant to carry the diagonal cut joint 13 of copper pipe B12 one side to pass two endoporus 8 in electric current conveying and water coolant, the upper end of diagonal cut joint 13 is higher than the upper end of endoporus 8.
In Fig. 3,4,5; The described high-frequency coil structure that can produce two silicon cores and other crystalline material simultaneously, described diagonal cut joint 13 upper ends can be provided with splitter box 14; The middle and lower part of described diagonal cut joint 13 can be provided with down splitter box 15; The following splitter box 15 of last splitter box 14 that described diagonal cut joint 13 upper ends are provided with and middle and lower part setting can be provided with wherein arbitrary separately; The following splitter box 15 that last splitter box 14 that described diagonal cut joint 13 upper ends are provided with and middle and lower part are provided with can be provided with simultaneously.
Described endoporus 8 can be set to rounding of angle endoporus 8, trilateral endoporus 8, the interior rounding of angle endoporus 8 of trilateral, Polygons endoporus 8, irregular polygon endoporus 8, rhombus endoporus 8, the interior rounding of angle endoporus 8 of rhombus, trapezoidal endoporus 8, trapezoidal interior rounding of angle endoporus 8, Long Circle endoporus 8 or oval endoporus 8 in circular inner hole 8, square inner bore 8, square interior rounding of angle endoporus 8, rectangle endoporus 8, the rectangle.
Use is as described below: in Fig. 6, earlier fuel rod 1 is delivered to radio-frequency coil 3 bottoms, fuel rod 1 is near more good more apart from radio-frequency coil 3, but must not contact with radio-frequency coil 3, electric current on radio-frequency coil 3 is carried and water coolant carries copper pipe A11 energising to send water and another root electric current to carry and water coolant is carried copper pipe B12 energising draining then, electric current 18 impels radio-frequency coil 3 to produce powerful magnetic line of force 2, make raw material silicon rod 1 upper end utilize magnetic line of force 2 to carry out induction heating near the part of coil, the water coolant that flows through in the cooling water channel 4 gives radio-frequency coil 3 coolings, and diagonal cut joint 13 passes between two endoporus 8.
In Fig. 1,6, the diagonal cut joint that is provided with between two endoporus 8 passes between two endoporus therein, also can be on adding in diagonal cut joint 13 upper ends on the above-mentioned basis splitter box 14, add in the middle and lower part of diagonal cut joint 13 under splitter box 15, because the height of diagonal cut joint 13 is spent the upper end of two endoporus, and added upper and lower splitter box and impelled electric current 16 uniformly around 8 operations of two endoporus, its major function is to make fuel rod 1 thermally equivalent in order to make high-frequency current can form to intersect at boundary, and can realize the effect of auxiliaryization material.
After melt at 10 position below the close radio-frequency coil in the termination of raw material silicon rod 1, young brilliant chuck 7 is being with young brilliant 6 to descend, make young brilliant 6 melting areas by two endoporus, 8 back insertion fuel rods 1, promote young brilliant 6 then, the melt cognition on fuel rod 1 top is followed young brilliant 6 and is risen, also corresponding the following synchronously of the lower shaft of its fuel rod 1 bottom slowly risen, but its fuel rod 1 must not contact with radio-frequency coil 3.
Because the end of fuel rod 1 may be not too smooth, so, 10 steps 16 that are designed to cave in below the radio-frequency coil, its role is to make as much as possible the bottom surfaces 10 of raw material silicon rod more than 1 near radio-frequency coil, the slope from outside to inside of its 9 designs above radio-frequency coil, its effect is can reduce high-frequency current too the concentrating of middle part, and makes its uniform distribution on radio-frequency coil 3, with the effect that realizes being heated evenly.
The melting area on raw material silicon rod 1 top is in the sticking and drive of young crystalline substance 6 and by behind radio-frequency coil 3 endoporus 8, because weakening and condensation of magnetic line of force 2, just form a new column type crystal, its young brilliant chuck 7 is carried young brilliant 6 secretly and is slowly risen, and just can form the finished silicon core 5 of desired length.
The embodiment that selects for use in this article in order to disclose purpose of the present invention currently thinks to suit, but making of should be appreciated that, and the present invention is intended to comprise that all belong to all changes and the improvement of the interior embodiment of this design and the scope of the invention.
Claims (1)
1. the high-frequency coil structure that can produce two silicon cores and other crystalline material simultaneously, described high-frequency coil structure is provided with the electric current conveying in the bottom of radio-frequency coil and water coolant carries copper pipe A (11) and electric current to carry and water coolant is carried copper pipe B (12), (9) are the inclined-plane that caves in to the central position above the radio-frequency coil of radio-frequency coil, be provided with below the radio-frequency coil of radio-frequency coil to the central position cave in trapezoidal, cooling water channel (4) ring is embedded in the outside of radio-frequency coil (3); It is characterized in that: described high-frequency coil structure comprises the diagonal cut joint (13) that is used for electric current (16) water conservancy diversion, two endoporus (8) are arranged on the middle part of radio-frequency coil (3), carry copper pipe A (11) and electric current conveying and water coolant to carry the diagonal cut joint (13) of copper pipe B (12) one sides to pass between two endoporus (8) in electric current conveying and water coolant, the upper end of diagonal cut joint (13) is higher than the upper end of two endoporus (8); Described high-frequency coil structure also comprises splitter box, and wherein splitter box comprises the last splitter box (14) of the upper end that is arranged at described diagonal cut joint (13) and is arranged on the following splitter box (15) of described diagonal cut joint (13) middle and lower part.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101820002A CN101457388B (en) | 2008-11-25 | 2008-11-25 | High-frequency coil structure capable of simultaneous producing two silicon cores and other crystal material |
| EP09828609.9A EP2366814A4 (en) | 2008-11-25 | 2009-11-06 | High-frequency coil pulling holes arrangement for producing multiple silicon cores |
| RU2010145474/05A RU2459891C2 (en) | 2008-11-25 | 2009-11-06 | High-frequency inductor with draw plates for production of multiple siliceous bars |
| KR1020107026853A KR101324582B1 (en) | 2008-11-25 | 2009-11-06 | High-frequency coil pulling holes arrangement for producing multiple silicon cores |
| US13/125,973 US20110204044A1 (en) | 2008-11-25 | 2009-11-06 | High-frequency coil pulling holes arrangement for producing multiple silicon cores |
| PCT/CN2009/074838 WO2010060349A1 (en) | 2008-11-25 | 2009-11-06 | High-frequency coil pulling holes arrangement for producing multiple silicon cores |
| JP2011529439A JP5313354B2 (en) | 2008-11-25 | 2009-11-06 | Arrangement of high-frequency coil drawing holes for manufacturing multiple silicon cores |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101820002A CN101457388B (en) | 2008-11-25 | 2008-11-25 | High-frequency coil structure capable of simultaneous producing two silicon cores and other crystal material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101457388A CN101457388A (en) | 2009-06-17 |
| CN101457388B true CN101457388B (en) | 2011-06-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008101820002A Expired - Fee Related CN101457388B (en) | 2008-11-25 | 2008-11-25 | High-frequency coil structure capable of simultaneous producing two silicon cores and other crystal material |
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| Country | Link |
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| CN (1) | CN101457388B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2366814A4 (en) * | 2008-11-25 | 2014-03-19 | Luoyang Jinnuo Mechanical Eng | High-frequency coil pulling holes arrangement for producing multiple silicon cores |
| CN103668430B (en) * | 2012-09-09 | 2017-12-01 | 洛阳金诺机械工程有限公司 | Produce the high frequency coil of 16 or 17 silicon cores |
| CN103668433B (en) * | 2012-09-09 | 2018-02-02 | 洛阳金诺机械工程有限公司 | Produce the high frequency coil of 12 or 13 silicon cores |
| CN103668434B (en) * | 2012-09-09 | 2018-02-02 | 洛阳金诺机械工程有限公司 | Produce the high frequency coil of 15 or 16 silicon core |
| CN103668429B (en) * | 2012-09-09 | 2017-12-01 | 洛阳金诺机械工程有限公司 | Produce the high frequency coil of 13 or 14 silicon cores |
| CN103668439B (en) * | 2012-09-09 | 2017-12-01 | 洛阳金诺机械工程有限公司 | Produce the high frequency coil of 12 or 13 silicon cores |
| CN103993349A (en) * | 2014-05-06 | 2014-08-20 | 洛阳金诺机械工程有限公司 | High-frequency coil for drawing of silicon single crystal rods by using zone-melting method |
| CN104264220A (en) * | 2014-07-02 | 2015-01-07 | 洛阳金诺机械工程有限公司 | Direct silicon core drawing method using product material |
-
2008
- 2008-11-25 CN CN2008101820002A patent/CN101457388B/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| CN101457388A (en) | 2009-06-17 |
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Owner name: LUOYANG JINNUO MACHINERY ENGINEERING CO., LTD. Free format text: FORMER OWNER: LIU ZHAOXUAN Effective date: 20111115 |
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Free format text: CORRECT: ADDRESS; FROM: 471000 LUOYANG, HENAN PROVINCE TO: 471009 LUOYANG, HENAN PROVINCE |
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Effective date of registration: 20111115 Address after: 471009 Jin Xin of Henan Province, Luoyang national hi tech Industrial Development Zone, Road No. 2 Luoyang Jinnuo Machinery Engineering Co Ltd Patentee after: LUOYANG JINNUO MECHANICAL ENGINEERING Co.,Ltd. Address before: 471000 Henan province Luoyang Xigong Road No. 1, No. 24 Jiashuyuan monocrystalline silicon factory building 1 unit 101 room Patentee before: Liu Chaoxuan |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
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Granted publication date: 20110629 Termination date: 20211125 |