CN101447425B - 通过处理开口侧壁上的聚合物来防止弯曲和鼓起的方法 - Google Patents

通过处理开口侧壁上的聚合物来防止弯曲和鼓起的方法 Download PDF

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Publication number
CN101447425B
CN101447425B CN2008101612758A CN200810161275A CN101447425B CN 101447425 B CN101447425 B CN 101447425B CN 2008101612758 A CN2008101612758 A CN 2008101612758A CN 200810161275 A CN200810161275 A CN 200810161275A CN 101447425 B CN101447425 B CN 101447425B
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China
Prior art keywords
bias power
polymer film
flow rate
gas
plasma
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Expired - Fee Related
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CN2008101612758A
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English (en)
Chinese (zh)
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CN101447425A (zh
Inventor
卡洛·贝拉
肯尼·L·多安
斯蒂芬·威格
塞布哈什·戴斯沙姆克
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Applied Materials Inc
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Applied Materials Inc
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    • H10P50/242—
    • H10P50/283—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H10W20/081—

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN2008101612758A 2007-09-25 2008-09-24 通过处理开口侧壁上的聚合物来防止弯曲和鼓起的方法 Expired - Fee Related CN101447425B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/861,032 US7846846B2 (en) 2007-09-25 2007-09-25 Method of preventing etch profile bending and bowing in high aspect ratio openings by treating a polymer formed on the opening sidewalls
US11/861,032 2007-09-25

Publications (2)

Publication Number Publication Date
CN101447425A CN101447425A (zh) 2009-06-03
CN101447425B true CN101447425B (zh) 2011-06-01

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CN2008101612758A Expired - Fee Related CN101447425B (zh) 2007-09-25 2008-09-24 通过处理开口侧壁上的聚合物来防止弯曲和鼓起的方法

Country Status (6)

Country Link
US (1) US7846846B2 (enExample)
EP (1) EP2043139A2 (enExample)
JP (1) JP5553496B2 (enExample)
KR (1) KR101019930B1 (enExample)
CN (1) CN101447425B (enExample)
TW (1) TWI367527B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100330805A1 (en) * 2007-11-02 2010-12-30 Kenny Linh Doan Methods for forming high aspect ratio features on a substrate
KR101575190B1 (ko) * 2010-02-12 2015-12-08 삼성전자주식회사 윗면과 바닥면의 시디차가 없는 깊은 트렌치를 갖는 반도체 및 제조방법
CN101866848B (zh) * 2010-04-29 2012-05-30 中微半导体设备(上海)有限公司 一种刻蚀有机物层的等离子刻蚀方法
US9165785B2 (en) 2013-03-29 2015-10-20 Tokyo Electron Limited Reducing bowing bias in etching an oxide layer
US9275869B2 (en) * 2013-08-02 2016-03-01 Lam Research Corporation Fast-gas switching for etching
KR102203460B1 (ko) 2014-07-11 2021-01-18 삼성전자주식회사 나노구조 반도체 발광소자의 제조방법
KR20160119329A (ko) 2015-04-02 2016-10-13 삼성전자주식회사 반도체 소자의 미세패턴 형성방법
KR102345979B1 (ko) 2015-04-30 2021-12-31 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
CN111063655A (zh) * 2018-10-17 2020-04-24 无锡华润上华科技有限公司 一种半导体器件的制造方法
CN111785604B (zh) * 2019-04-04 2025-04-08 中微半导体设备(上海)股份有限公司 气体喷淋头、制作方法及包括气体喷淋头的等离子体装置
US12479004B2 (en) 2019-10-18 2025-11-25 Lam Research Corporation Selective attachment to enhance SiO2:SiNx etch selectivity
US11437230B2 (en) 2020-04-06 2022-09-06 Applied Materials, Inc. Amorphous carbon multilayer coating with directional protection
US12106971B2 (en) 2020-12-28 2024-10-01 American Air Liquide, Inc. High conductive passivation layers and method of forming the same during high aspect ratio plasma etching
KR20230050130A (ko) * 2021-10-07 2023-04-14 삼성전자주식회사 식각 공정을 이용하는 집적회로 소자의 제조 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9616225D0 (en) * 1996-08-01 1996-09-11 Surface Tech Sys Ltd Method of surface treatment of semiconductor substrates
US6187685B1 (en) * 1997-08-01 2001-02-13 Surface Technology Systems Limited Method and apparatus for etching a substrate
US6228775B1 (en) 1998-02-24 2001-05-08 Micron Technology, Inc. Plasma etching method using low ionization potential gas
JP4153606B2 (ja) * 1998-10-22 2008-09-24 東京エレクトロン株式会社 プラズマエッチング方法およびプラズマエッチング装置
DE69942034D1 (de) * 1998-11-04 2010-04-01 Surface Technology Systems Plc Verfahren zur ätzung eines substrats
JP2002110647A (ja) 2000-09-29 2002-04-12 Hitachi Ltd 半導体集積回路装置の製造方法
JP5174319B2 (ja) * 2005-11-11 2013-04-03 株式会社日立ハイテクノロジーズ エッチング処理装置およびエッチング処理方法
US7713430B2 (en) * 2006-02-23 2010-05-11 Micron Technology, Inc. Using positive DC offset of bias RF to neutralize charge build-up of etch features
KR100763514B1 (ko) 2006-06-30 2007-10-04 삼성전자주식회사 반도체 장치의 개구 형성 방법 및 이를 이용한 반도체 장치제조 방법
US7682986B2 (en) * 2007-02-05 2010-03-23 Lam Research Corporation Ultra-high aspect ratio dielectric etch
US20080203056A1 (en) * 2007-02-26 2008-08-28 Judy Wang Methods for etching high aspect ratio features

Also Published As

Publication number Publication date
US20090081876A1 (en) 2009-03-26
KR101019930B1 (ko) 2011-03-08
CN101447425A (zh) 2009-06-03
KR20090031822A (ko) 2009-03-30
JP2009124109A (ja) 2009-06-04
EP2043139A2 (en) 2009-04-01
US7846846B2 (en) 2010-12-07
TW200924050A (en) 2009-06-01
TWI367527B (en) 2012-07-01
JP5553496B2 (ja) 2014-07-16

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