CN101866848B - 一种刻蚀有机物层的等离子刻蚀方法 - Google Patents
一种刻蚀有机物层的等离子刻蚀方法 Download PDFInfo
- Publication number
- CN101866848B CN101866848B CN2010101663935A CN201010166393A CN101866848B CN 101866848 B CN101866848 B CN 101866848B CN 2010101663935 A CN2010101663935 A CN 2010101663935A CN 201010166393 A CN201010166393 A CN 201010166393A CN 101866848 B CN101866848 B CN 101866848B
- Authority
- CN
- China
- Prior art keywords
- gas
- etching
- substrate
- zone
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (19)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010101663935A CN101866848B (zh) | 2010-04-29 | 2010-04-29 | 一种刻蚀有机物层的等离子刻蚀方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010101663935A CN101866848B (zh) | 2010-04-29 | 2010-04-29 | 一种刻蚀有机物层的等离子刻蚀方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101866848A CN101866848A (zh) | 2010-10-20 |
CN101866848B true CN101866848B (zh) | 2012-05-30 |
Family
ID=42958498
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010101663935A Active CN101866848B (zh) | 2010-04-29 | 2010-04-29 | 一种刻蚀有机物层的等离子刻蚀方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101866848B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102208333A (zh) * | 2011-05-27 | 2011-10-05 | 中微半导体设备(上海)有限公司 | 等离子体刻蚀方法 |
CN103227108B (zh) * | 2012-01-31 | 2016-01-06 | 中微半导体设备(上海)有限公司 | 一种有机物层刻蚀方法 |
CN103227109B (zh) * | 2012-01-31 | 2015-11-25 | 中微半导体设备(上海)有限公司 | 一种有机物层刻蚀方法 |
JP5917477B2 (ja) * | 2013-11-29 | 2016-05-18 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及びプログラム |
CN114068272B (zh) * | 2020-07-31 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | 一种气体流量调节装置和调节方法及等离子体处理装置 |
CN112490105A (zh) * | 2020-11-23 | 2021-03-12 | 长江存储科技有限责任公司 | 一种等离子体处理装置及处理方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101064272A (zh) * | 2006-04-28 | 2007-10-31 | 应用材料股份有限公司 | 采用聚合蚀刻气体的等离子体蚀刻工艺 |
CN101261929A (zh) * | 2007-01-30 | 2008-09-10 | 应用材料股份有限公司 | 利用晶圆前侧气体净化来去除晶圆后侧聚合物的工艺 |
CN101447425A (zh) * | 2007-09-25 | 2009-06-03 | 应用材料公司 | 通过处理开口侧壁上的聚合物来防止弯曲和鼓起的方法 |
CN101483135A (zh) * | 2008-12-31 | 2009-07-15 | 中微半导体设备(上海)有限公司 | 含碳层的刻蚀方法 |
CN101546697A (zh) * | 2008-03-25 | 2009-09-30 | 东京毅力科创株式会社 | 等离子体处理装置 |
-
2010
- 2010-04-29 CN CN2010101663935A patent/CN101866848B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101064272A (zh) * | 2006-04-28 | 2007-10-31 | 应用材料股份有限公司 | 采用聚合蚀刻气体的等离子体蚀刻工艺 |
CN101261929A (zh) * | 2007-01-30 | 2008-09-10 | 应用材料股份有限公司 | 利用晶圆前侧气体净化来去除晶圆后侧聚合物的工艺 |
CN101447425A (zh) * | 2007-09-25 | 2009-06-03 | 应用材料公司 | 通过处理开口侧壁上的聚合物来防止弯曲和鼓起的方法 |
CN101546697A (zh) * | 2008-03-25 | 2009-09-30 | 东京毅力科创株式会社 | 等离子体处理装置 |
CN101483135A (zh) * | 2008-12-31 | 2009-07-15 | 中微半导体设备(上海)有限公司 | 含碳层的刻蚀方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101866848A (zh) | 2010-10-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101866848B (zh) | 一种刻蚀有机物层的等离子刻蚀方法 | |
US11011388B2 (en) | Plasma apparatus for high aspect ratio selective lateral etch using cyclic passivation and etching | |
JP6461482B2 (ja) | 半導体製造用の内部プラズマグリッド | |
TWI697952B (zh) | 用於晶圓副產物分佈及蝕刻特徵部輪廓均勻性之透過可調式電漿解離的氣體反應軌跡控制 | |
CN103430289B (zh) | 用于蚀刻sin膜的方法 | |
TWI687962B (zh) | 使用離子束蝕刻以產生環繞式閘極結構 | |
CN104465457B (zh) | 双等离子体源反应器处理晶片中离子与中性物质比控制 | |
CN102473634B (zh) | 等离子体处理装置和等离子体处理方法 | |
CN105489485B (zh) | 处理被处理体的方法 | |
US20080078746A1 (en) | Substrate processing system, gas supply unit, method of substrate processing, computer program, and storage medium | |
CN102983052A (zh) | 3d闪存结构的蚀刻工艺 | |
KR20200028490A (ko) | 수평 표면들 상에 SiN의 선택적인 증착 | |
JP2006245533A (ja) | 高密度プラズマ化学気相蒸着装置 | |
TW201715069A (zh) | 用以選擇性地將碳層沉積在基底上的設備與方法 | |
CN108630578A (zh) | 超高选择性的氮化物蚀刻以形成FinFET器件 | |
TW201841250A (zh) | 電漿處理裝置 | |
CN103219260A (zh) | 使用极端边缘气体管道的刻蚀装置 | |
US20060011582A1 (en) | Fast isotropic etching system and process for large, non-circular substrates | |
TW202036718A (zh) | 矽介質材料蝕刻方法 | |
TWI430363B (zh) | A plasma etching method for etching an organic layer | |
US20210057220A1 (en) | Etching method and etching apparatus | |
US20210320004A1 (en) | Nitride films with improved etch selectivity for 3d nand integration | |
JP3411240B2 (ja) | 半導体試料の処理装置及び処理方法 | |
JP4608827B2 (ja) | プラズマ処理装置及びプラズマ処理方法 | |
Joo | Numerical simulation: effects of gas flow and Rf current direction on plasma uniformity in an ICP dry etcher |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Plasma etching method for etching organic matter layer Effective date of registration: 20150202 Granted publication date: 20120530 Pledgee: China Development Bank Co Pledgor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Registration number: 2009310000663 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20170809 Granted publication date: 20120530 Pledgee: China Development Bank Co Pledgor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Registration number: 2009310000663 |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |