CN101442092A - High-brightness LED and method of manufacturing the same - Google Patents
High-brightness LED and method of manufacturing the same Download PDFInfo
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- CN101442092A CN101442092A CNA2008100721620A CN200810072162A CN101442092A CN 101442092 A CN101442092 A CN 101442092A CN A2008100721620 A CNA2008100721620 A CN A2008100721620A CN 200810072162 A CN200810072162 A CN 200810072162A CN 101442092 A CN101442092 A CN 101442092A
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Abstract
The invention discloses a high brightness LED and a method for manufacturing the same. The method comprises the following steps: forming a second semiconductor layer, an active layer and a first semiconductor layer one by one on an electrically conductive substrate; forming a second ohm contact electrode on another side of the electrically conductive substrate; and forming a first ohm contact electrode and a Schottky contact welding wire electrode which are connected on the first semiconductor layer. The LED and the method have the advantages that the LED and the method can improve the current distribution inside chips obviously, make the current distribute more and evener inside an emergent area, increase the brightness and prolong the service life of a device.
Description
Technical field
The present invention relates to a kind of high brightness LED and manufacture method thereof, particularly related to a kind of the have high brightness LED of definite shape first Ohm contact electrode and the manufacture method of this high brightness LED.
Background technology
Light-emitting diode is at huge elements of field consumption such as illumination, demonstration, control, communications, significant advantage such as have that life-span length, little power consumption, voltage are low, good stability, reaction time are short.Along with development of semiconductor, red, yellow, green high brightness LED has been widely used in outdoor display screen, traffic lights, traditional display lamp, special lighting field etc., and progress into the normal lighting field, have vast market prospect.
Conventional at present light-emitting diode 1 structure shown in Fig. 1-1, Fig. 1-2, all comprises a P district (wherein containing one or more layers P type semiconductor material 14) and a N district (wherein containing one or more layers N type semiconductor material 12) and ties 13 by the luminous P-N of energy that P district and N district intersection are formed substantially on electrically-conductive backing plate 11.In addition, the outside in P district and N district respectively has a P electrode 16 and a N electrode 17 to switch on to light-emitting diode chip for backlight unit.P electrode 16 and N electrode 17 all are to be had certain thickness conduction good metal material and made by opaque usually.Between P electrode 16 and the P type semiconductor material 14, form ohmic contact between N electrode 17 and the electrically-conductive backing plate 11.So-called ohmic contact is meant the current-voltage characteristic curve that has linearity and symmetry on the semiconductor equipment, if the current-voltage indicatrix is not linear, this contact is Schottky contacts.Schottky contacts is meant when metal and semi-conducting material contact, at semi-conductive at the interface band curvature, form Schottky barrier, the existence of potential barrier has just caused big interface resistance, and Dui Ying ohmic contact interface potential barrier is very little or do not have contact berrier with it.Chip size is generally all greater than 100 microns, and P district thickness generally all has only several microns even still less, make that lateral resistance is more much bigger than longitudinal electrical resistance in the chip P district, the electric current major part in the P district is all done and is vertically flowed vertically by the P-N knot and seldom do lateral flow, and CURRENT DISTRIBUTION is very inhomogeneous.Generally have following problem:
(1) because the chip internal CURRENT DISTRIBUTION is inhomogeneous, cause efficient lighting area to reduce;
(2) CURRENT DISTRIBUTION is inhomogeneous, causes regional heating uneven, influences chip photoelectric performance and life-span;
(3) current density maximum under the output optical zone electrode is luminous the strongest, but its bright dipping overwhelming majority is all stopped that by opaque P electrode can't penetrate, light extraction efficiency is lower.
Summary of the invention
In order to address the above problem, the invention provides a kind of high brightness LED and manufacture method thereof, can significantly improve the chip internal CURRENT DISTRIBUTION, make electric current more, more be evenly distributed in the bright dipping zone, make brightness and device lifetime improve.
The present invention realizes by following approach:
A kind of high brightness LED, on electrically-conductive backing plate, form second semiconductor layer, active layer and first semiconductor layer in regular turn, the another side of electrically-conductive backing plate forms second Ohm contact electrode, form first Ohm contact electrode and Schottky contacts bonding wire electrode on first semiconductor layer, and Schottky contacts bonding wire electrode is connected with first Ohm contact electrode.
Described first Ohm contact electrode be shaped as continuous line style, continuous latticed or continuous annulus.
Described first Ohm contact electrode be shaped as discontinuous linear, discontinuous latticed or discontinuous annulus.
Described Schottky contacts bonding wire electrode is arbitrary shapes such as circle, quadrangle, hexagon, octagon, contacts with first Ohm contact electrode in the optional position in chip light emitting district.
Described second Ohm contact electrode is the face electrode structure that has been paved with whole electrically-conductive backing plate, also can not be paved with the point electrode arrangement of whole electrically-conductive backing plate.
A kind of manufacture method of high brightness LED comprises following steps:
(1) provides an electrically-conductive backing plate;
(2) on electrically-conductive backing plate, form second semiconductor layer;
(3) on second semiconductor layer, form active layer;
(4) on active layer, form first semiconductor layer;
(5) formation has first Ohm contact electrode on first semiconductor layer;
(6) on first semiconductor layer, form the bonding wire electrode, the edge of bonding wire electrode is connected with first Ohm contact electrode;
(7) another side at electrically-conductive backing plate forms second Ohm contact electrode.
Described first Ohm contact electrode is gold, nickel, beryllium, germanium, zinc, silver, aluminium, titanium, chromium etc. but the single or multiple lift metal material or the multilayer that are not limited to these metals comprises many metal alloy compositions more than two kinds.
Described Schottky contacts bonding wire electrode is gold, nickel, silver, aluminium, titanium, chromium, platinum etc. but the single or multiple lift metal material or the multilayer that are not limited to these metals comprises many metal alloy compositions more than two kinds.
Described second Ohm contact electrode is gold, nickel, beryllium, germanium, zinc, silver, aluminium, titanium, chromium etc. but the single or multiple lift metal material or the multilayer that are not limited to these metals comprises many metal alloy compositions more than two kinds.
After adopting such scheme, the present invention is owing to form the bonding wire electrode of effigurate first Ohm contact electrode and Schottky contacts on first semiconductor layer, and the bonding wire electrode is connected with first Ohm contact electrode, like this, make and directly do not inject first semiconductor layer from the bonding wire electrode from the electric current of bonding wire electrode input, but expand afterwards injection luminescent diode bright dipping zone equably by first Ohm contact electrode, thereby improve the chip internal CURRENT DISTRIBUTION, compared with prior art, make electric current more, more be evenly distributed in the bright dipping zone, make brightness and device lifetime improve.
Description of drawings
Fig. 1-the 1st, general light emitting diode construction end view;
Fig. 1-2 is general light emitting diode construction vertical view;
Fig. 2-the 1st, the structure side view of the embodiment of the invention one;
Fig. 2-the 2nd, the structure vertical view of the embodiment of the invention one (continuous line style);
Fig. 3-the 1st, the structure side view of the embodiment of the invention two;
Fig. 3-the 2nd, the structure vertical view of the embodiment of the invention two;
Fig. 3-the 3rd, the structure upward view of the embodiment of the invention two (discontinuous point-like);
Fig. 4-the 1st, the structure side view of the embodiment of the invention three;
Fig. 4-the 2nd, the structure vertical view of the embodiment of the invention three (continuous is latticed);
Fig. 5-the 1st, the structure side view of the embodiment of the invention four;
Fig. 5-the 2nd, the structure vertical view of the embodiment of the invention four (discontinuous linear);
Fig. 6-the 1st, the structure side view of the embodiment of the invention five;
Fig. 6-the 2nd, the structure vertical view of the embodiment of the invention five (discontinuous annulus).
Embodiment
Embodiment one
As Fig. 2-1, shown in Fig. 2-2, be embodiments of the invention one light-emitting diodes 2, comprise: the GaAs GaAs electrically-conductive backing plate 21 of a N type, on electrically-conductive backing plate 21, form second semiconductor layer 22 in regular turn, active layer 23, first semiconductor layer, 24 ray structures, the one bonding wire electrode 26 with first Ohm contact electrode 25 of definite shape and a Schottky contacts is positioned at (being the ray structure outside) on this first semiconductor layer 24, and Schottky contacts bonding wire electrode 26 is connected with first Ohm contact electrode 25, and one second Ohm contact electrode 27 is positioned at the another side (being the ray structure outside) of electrically-conductive backing plate 21.
Concrete manufacture method comprises following step:
The GaAs electrically-conductive backing plate 21 of one N type at first is provided, adopt known technology then, form N type AlGaInP second semiconductor layer 22 successively as organic metallochemistry gas phase brilliant method (MOCVD) of heap of stone, molecular beam epitaxy method (MBE) etc., active layer 23, P type gallium phosphide first semiconductor layer 24 finally obtains ray structure.
Adopt the plated film mode (also being prior art) of electron beam evaporation or sputter again, evaporated gold beryllium alloy 3000 dusts on above-mentioned P type gallium phosphide first semiconductor layer 24 form first Ohm contact electrode 25; And the method (also being prior art) by exposure, development and etching (image transfer), make above-mentioned first Ohm contact electrode 25 form definite shape, the ring-shaped continuous fine rule type that is shaped as of first Ohm contact electrode 25 among this embodiment, also can be continuous latticed (as Fig. 4-2 illustrated embodiment three) or discontinuous linear (as Fig. 5-2 illustrated embodiment four) or discontinuous annulus (as Fig. 6-2 illustrated embodiment five) or other shape, its shared luminous zone area ratio also can increase or reduce; By alloy technique,, make first Ohm contact electrode 25 and first semiconductor layer 24 form ohmic contact at 600 ℃.
Adopt the plated film mode of electron beam evaporation or sputter, on above-mentioned P type gallium phosphide first semiconductor layer 24 and first Ohm contact electrode 25, evaporate titanium 500 dusts, aluminium 10000 dusts in regular turn, form bonding wire electrode 26; And by exposure, development and etching method, obtain the shape of bonding wire electrode 26, this embodiment bonding wire electrode 26 is circular, and be positioned in the middle of P type gallium phosphide first semiconductor layer 24, also can be arbitrary shapes such as four distortion, hexagon, octagon, be positioned at the optional position of luminous zone, the overwhelming majority under this bonding wire electrode 26 does not all cover on first Ohm contact electrode 25, just link at bonding wire electrode 26 edges and first Ohm contact electrode 25, this bonding wire electrode 26 is a Schottky contacts with above-mentioned P type gallium phosphide first semiconductor layer 24.
Adopt the plated film mode of electron beam evaporation or sputter, another side evaporated gold germanium alloy 4000 dusts at electrically-conductive backing plate 21, form second Ohm contact electrode 27, this embodiment second Ohm contact electrode 27 has been paved with the face electrode structure (as Fig. 2-1 illustrated embodiment one) of the GaAs electrically-conductive backing plate 21 of whole N type, also can not be paved with the point electrode arrangement (as Fig. 3-3 illustrated embodiment two) of the GaAs electrically-conductive backing plate 21 of whole N type; By alloy technique,, make second Ohm contact electrode 27 and the GaAs electrically-conductive backing plate 21 of N type form ohmic contact at 500 ℃.
The metal material that first Ohm contact electrode 25 uses among this embodiment is golden beryllium, the metal material that the second ohmic contact face electrode 27 uses is golden germanium, and true ohm contact electrode material can use but be not limited to single or multiple lift metal material such as gold, nickel, beryllium, germanium, zinc, silver, aluminium, titanium, chromium or multilayer comprises two or more many metal alloy compositions.Bonding wire electrode 26 uses titanium aluminium double layer of metal structure, and actual bonding wire electrode material also can use single or multiple lift metal materials such as being not limited to gold, nickel, beryllium, platinum, germanium, zinc, titanium, tin, indium, aluminium, chromium or multilayer to comprise two or more many metal alloy compositions.
The high brightness LED made among this embodiment is carried out the photoelectric properties test by test machine, compare with the photoelectric parameter of common light-emitting diode, parameter comparison is as follows:
(1) under the same test condition, test V-I characteristic curve, high brightness LED first Ohm contact electrode 25 and first semiconductor layer, 24 contact resistances made in the present embodiment are 22 ohm, and general technology makes light-emitting diode first Ohm contact electrode and the first semiconductor layer contact resistance is 34 ohm.
(2) under the same test condition (20mA), high brightness LED and the general technology made in the test present embodiment make light-emitting diode, and photoelectric parameter is shown in subordinate list 1.Contrast as can be known, the forward voltage mean value of the high brightness LED that present embodiment is made makes the low 0.13V of positive voltage of light emitting diode mean value than general technology, and average brightness exceeds 14.4mcd, exceeds ratio and reaches 14%, not obviously difference of other photoelectric parameter simultaneously.
Subordinate list 1
| Project | Forward voltage mean value | Starting resistor mean value | Average brightness | Wavelength mean value |
| The light-emitting diode that present embodiment is made | 2.00V | 1.55V | 114.6mcd | 633.1nm |
| The light-emitting diode that general technology is made | 2.13V | 1.54V | 100.2mcd | 633.5nm |
Embodiment two
Shown in Fig. 3-1, Fig. 3-2, Fig. 3-3, be embodiments of the invention two light-emitting diodes 3.
Identical with embodiment one, embodiment two also comprises electrically-conductive backing plate 31, on electrically-conductive backing plate 31, form second semiconductor layer 32 in regular turn, active layer 33, first semiconductor layer, 34 ray structures, one has first Ohm contact electrode 35 of definite shape and the bonding wire electrode 36 of a Schottky contacts is positioned on this first semiconductor layer 34, and the edge of Schottky contacts bonding wire electrode 36 is connected with first Ohm contact electrode 35, the shape of first Ohm contact electrode 35 and bonding wire electrode 36 also with embodiment one identical (shown in Fig. 3-2), one second Ohm contact electrode 37 is positioned at the another side of electrically-conductive backing plate 31.
This embodiment two is with the difference of embodiment one, also by exposure, development and etching method, obtain second Ohm contact electrode 37 of definite shape, the point electrode arrangement of seeing the GaAs electrically-conductive backing plate 31 that being shaped as of Fig. 3-3, the second Ohm contact electrode 37 is not paved with whole N type.
Embodiment three
Shown in Fig. 4-1, Fig. 4-2, be embodiments of the invention three light-emitting diodes 4.
Identical with embodiment one, embodiment three also comprises electrically-conductive backing plate 41, on electrically-conductive backing plate 41, form second semiconductor layer 42, active layer 43, first semiconductor layer, 44 ray structures in regular turn, one has first Ohm contact electrode 45 of definite shape and the bonding wire electrode 46 of a Schottky contacts is positioned on this first semiconductor layer 44, and the edge of Schottky contacts bonding wire electrode 46 is connected with first Ohm contact electrode 45, and one second Ohm contact electrode 47 is positioned at the another side of electrically-conductive backing plate 21.
This embodiment three is with the difference of embodiment one, being shaped as of first Ohm contact electrode 45 continuous latticed (shown in Fig. 4-2).
Embodiment four
Shown in Fig. 5-1, Fig. 5-2, be embodiments of the invention four light-emitting diodes 5.
Identical with embodiment one, embodiment four also comprises electrically-conductive backing plate 51, on electrically-conductive backing plate 51, form second semiconductor layer 52, active layer 53, first semiconductor layer, 54 ray structures in regular turn, one has first Ohm contact electrode 55 of definite shape and the bonding wire electrode 56 of a Schottky contacts is positioned on this first semiconductor layer 54, and the edge of Schottky contacts bonding wire electrode 56 is connected with first Ohm contact electrode 55, and one second Ohm contact electrode 57 is positioned at the another side of electrically-conductive backing plate 21.
This embodiment four is with the difference of embodiment one, being shaped as of first Ohm contact electrode 55 discontinuous linear (shown in Fig. 5-2).
Embodiment five
Shown in Fig. 6-1, Fig. 6-2, be embodiments of the invention five light-emitting diodes 6.
Identical with embodiment one, embodiment five also comprises electrically-conductive backing plate 61, on electrically-conductive backing plate 61, form second semiconductor layer 62, active layer 63, first semiconductor layer, 64 ray structures in regular turn, one has first Ohm contact electrode 65 of definite shape and the bonding wire electrode 66 of a Schottky contacts is positioned on this first semiconductor layer 64, and the edge of Schottky contacts bonding wire electrode 66 is connected with first Ohm contact electrode 65, and one second Ohm contact electrode 67 is positioned at the another side of electrically-conductive backing plate 21.
This embodiment five is with the difference of embodiment one, first Ohm contact electrode 65 be shaped as discontinuous annulus (shown in Fig. 6-2).
The foregoing description is the preferred embodiments of the present invention and uses, and right the present invention does not only limit to above embodiment, and all any equivalents of doing according to spirit of the present invention are all within the scope of the invention.
Claims (10)
1, a kind of high brightness LED, on electrically-conductive backing plate, form second semiconductor layer, active layer and first semiconductor layer in regular turn, it is characterized in that: the another side of electrically-conductive backing plate forms second Ohm contact electrode, form first Ohm contact electrode and Schottky contacts bonding wire electrode on first semiconductor layer, and Schottky contacts bonding wire electrode is connected with first Ohm contact electrode.
2, a kind of high brightness LED as claimed in claim 1 is characterized in that: described first Ohm contact electrode be shaped as continuous line style, continuous latticed or continuous annulus.
3, a kind of high brightness LED as claimed in claim 1 is characterized in that: described first Ohm contact electrode be shaped as discontinuous line style, discontinuous latticed or discontinuous annulus.
4, a kind of high brightness LED as claimed in claim 1 is characterized in that: described Schottky contacts bonding wire electrode is circle, quadrangle, hexagon or octagon, contacts with first Ohm contact electrode in the optional position in chip light emitting district.
5, a kind of high brightness LED as claimed in claim 1 is characterized in that: described second Ohm contact electrode is the face electrode structure that has been paved with whole electrically-conductive backing plate.
6, a kind of high brightness LED as claimed in claim 1 is characterized in that: described second Ohm contact electrode is not for being paved with the point electrode arrangement of whole electrically-conductive backing plate.
7, a kind of manufacture method of high brightness LED is characterized in that comprising following steps:
(1) provides an electrically-conductive backing plate;
(2) on electrically-conductive backing plate, form second semiconductor layer;
(3) on second semiconductor layer, form active layer;
(4) on active layer, form first semiconductor layer;
(5) formation has first Ohm contact electrode on first semiconductor layer;
(6) on first semiconductor layer, form the bonding wire electrode, the edge of bonding wire electrode is connected with first Ohm contact electrode;
(7) another side at electrically-conductive backing plate forms second Ohm contact electrode.
8, the manufacture method of a kind of high brightness LED as claimed in claim 6 is characterized in that: step (5) first Ohm contact electrodes use the single or multiple lift metal material or the multilayer of metals such as gold, nickel, beryllium, germanium, zinc, silver, aluminium, titanium, chromium to comprise many metal alloy compositions more than two kinds.
9, the manufacture method of a kind of high brightness LED as claimed in claim 6 is characterized in that: step (6) Schottky contacts bonding wire electrode uses the single or multiple lift metal material or the multilayer of metals such as gold, nickel, silver, aluminium, titanium, chromium, platinum to comprise many metal alloy compositions more than two kinds.
10, the manufacture method of a kind of high brightness LED as claimed in claim 6 is characterized in that: step (7) second Ohm contact electrodes use the single or multiple lift metal material or the multilayer of metals such as gold, nickel, beryllium, germanium, zinc, silver, aluminium, titanium, chromium to comprise many metal alloy compositions more than two kinds.
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| CN101794850A (en) * | 2010-02-24 | 2010-08-04 | 中国科学院半导体研究所 | Symmetrical electrodes of parallelogram GaN-based LED chip |
| WO2011055202A3 (en) * | 2009-11-06 | 2011-09-01 | 旭明光电股份有限公司 | Light emitting diode device |
| WO2012094842A1 (en) * | 2011-01-14 | 2012-07-19 | Wen-Pin Chen | Light emitting diode |
| CN102664227A (en) * | 2012-04-27 | 2012-09-12 | 杭州士兰明芯科技有限公司 | Semiconductor light emitting diode (LED) device and formation method thereof |
| CN102931310A (en) * | 2012-11-16 | 2013-02-13 | 映瑞光电科技(上海)有限公司 | Light emitting diode (LED) chip and manufacturing method of LED chip |
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| WO2011055202A3 (en) * | 2009-11-06 | 2011-09-01 | 旭明光电股份有限公司 | Light emitting diode device |
| CN101794850A (en) * | 2010-02-24 | 2010-08-04 | 中国科学院半导体研究所 | Symmetrical electrodes of parallelogram GaN-based LED chip |
| CN101794850B (en) * | 2010-02-24 | 2012-09-05 | 中国科学院半导体研究所 | Symmetrical electrodes of parallelogram GaN-based LED chip |
| WO2012094842A1 (en) * | 2011-01-14 | 2012-07-19 | Wen-Pin Chen | Light emitting diode |
| CN102664227A (en) * | 2012-04-27 | 2012-09-12 | 杭州士兰明芯科技有限公司 | Semiconductor light emitting diode (LED) device and formation method thereof |
| CN102931310A (en) * | 2012-11-16 | 2013-02-13 | 映瑞光电科技(上海)有限公司 | Light emitting diode (LED) chip and manufacturing method of LED chip |
| CN104347775A (en) * | 2014-09-28 | 2015-02-11 | 映瑞光电科技(上海)有限公司 | LED (Light Emitting Diode) chip with graphical N electrode |
| CN104347775B (en) * | 2014-09-28 | 2017-10-17 | 映瑞光电科技(上海)有限公司 | LED chip with graphical N electrode |
| WO2016074642A1 (en) * | 2014-11-14 | 2016-05-19 | The Hong Kong University Of Science And Technology | Transistors having on-chip integrared photon source or photonic-ohmic drain to faciliate de-trapping electrons trapped in deep traps of transistors |
| US10270436B2 (en) | 2014-11-14 | 2019-04-23 | The Hong Kong University Of Science And Technology | Transistors having on-chip integrated photon source or photonic-ohmic drain to facilitate de-trapping electrons trapped in deep traps of transistors |
| CN109671825A (en) * | 2017-10-17 | 2019-04-23 | 北京天元广建科技研发有限责任公司 | A kind of polar semiconductor light emitting diode |
| CN109671825B (en) * | 2017-10-17 | 2021-08-10 | 北京天元广建科技研发有限责任公司 | Polar semiconductor light-emitting diode |
| CN111081831A (en) * | 2019-11-20 | 2020-04-28 | 华南师范大学 | Multi-electrode-based illumination communication device and preparation method thereof |
| CN111599906A (en) * | 2020-05-12 | 2020-08-28 | 武汉大学 | Manufacturing method of deep ultraviolet LED chip with vertical structure |
| CN111599906B (en) * | 2020-05-12 | 2021-05-18 | 武汉大学 | Manufacturing method of deep ultraviolet LED chip with vertical structure |
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