CN102315240A - High-voltage nitride LED (Light-Emitting Diode) circuit and corresponding high-voltage nitride LED device - Google Patents

Abstract

The invention provides a high-voltage nitride LED (Light-Emitting Diode) device, which comprises a plurality of LEDs connected in series to form an LED. One path of LEDs are continuously divided into n groups according to the sequence; and each group of LEDs are reversely connected in parallel with a discharge diode, wherein n is a natural integer. By implementing the technical scheme, the high-voltage LED device can be acquired and the anti-static performance of the device is improved; and meanwhile, the discharge diode and the LEDs are synchronously generated in the manufacturing process, thus the production process is simplified.

Description

High voltage nitride LED circuit and corresponding high voltage nitride LED device

technical field

The invention belongs to the field of light-emitting device manufacturing, and relates to a structural design and manufacture of a light-emitting device, in particular to a high-voltage nitride LED device integrating a reverse discharge diode.

Background technique

With the development of nitride-based high-brightness LED applications, a new generation of green and environmentally friendly solid-state lighting source nitride LEDs has become the focus of research, especially blue LEDs represented by the third-generation semiconductor gallium nitride (GaN) development. Group III nitride semiconductor materials based on GaN, indium gallium nitride (InGaN) and aluminum gallium nitride (AlGaN) alloys have wide direct bandgap, high internal and external quantum efficiency, high thermal conductivity, high temperature resistance, corrosion resistance, Shock resistance, high strength, and high hardness are ideal materials for manufacturing high-brightness light-emitting devices in the world.

With the rapid development of LED backlight applications, street lamps and other functional lighting applications, high-voltage LED devices will become a development trend in the lighting field. To realize high-voltage power supply of LED devices, multiple LEDs need to be connected in series. However, in the process of manufacturing or using LED devices, charge transfer occurs due to the existence of charges or electric fields, thus forming two voltages with opposite polarities called static electricity. Electrostatic charges will continue to accumulate. If the static electricity lacks a discharge channel and cannot be released in time, then the charge energy will accumulate to a very high value after a period of time. Once the maximum withstand value of the LED chip is exceeded, the charge will be lost in a very short moment (nanoseconds). Level) discharges between the two electrode layers of the LED. Since the electrostatic discharge phenomenon often occurs at the position where the resistance value is small and around the electrode, the discharge voltage rises instantaneously on these small resistances, and the discharge current also increases instantaneously correspondingly, generating heat of power joules, thus Partially between the conductive layers, the high temperature is often formed at the position with the smallest resistance value and the periphery of the electrodes. The high temperature will melt the conductive layers into some small holes, resulting in leakage, dark light, dead lights, electrical drift, etc. Phenomenon, even burnt LED light-emitting devices. For high-voltage LEDs with multiple light-emitting diodes in series, as long as one of the LEDs is damaged due to static electricity, the entire set of LED components will fail, so that the reliability of high-voltage LED devices will be greatly reduced due to electrostatic damage.

Therefore, in order to use high-voltage LEDs in various products and environments, it is necessary to improve the antistatic ability of high-voltage LEDs. People are trying to technically try various methods that can improve the antistatic ability of LEDs. For example, one of the ways is to independently connect a Zener diode made of silicon material in parallel with an LED device during device packaging or circuit manufacturing. Indeed, adding a Zener diode to the LED device can effectively improve the antistatic ability of the LED. In fact, the light-emitting diode itself belongs to the P-N junction diode structure of the semiconductor. If the discharge diode is directly manufactured in the LED chip manufacturing process and connected in parallel with the light-emitting diode through integrated means, the production steps can be simplified and the integrated light-emitting chip itself can be improved. Antistatic properties.

To sum up, when manufacturing III-nitride high-voltage LED light-emitting chips, on the one hand, it is hoped that the quality of the LED epitaxial wafer itself can be improved to improve the antistatic ability of the LED device, so as to obtain a reliable high-voltage LED chip. On the other hand, there are still problems in the actual implementation process, and it is urgent to introduce new methods that can effectively improve the above defects, so as to solve the problem of diode integration technology of high-voltage LED antistatic performance faced by the third-generation semiconductor materials.

Contents of the invention

The technical problem to be solved by the present invention is to provide a method capable of improving the antistatic ability of high-voltage nitride LEDs.

In order to solve the above problems, the present invention proposes a high-voltage nitride LED circuit, which includes a plurality of light-emitting diodes connected in series to form one light-emitting diode, and the one-way light-emitting diodes are sequentially and continuously divided into n groups, and each group of light-emitting diodes is inversely connected to a discharge diode. To parallel, where n is a natural number.

Correspondingly, the present invention provides a high-voltage nitride LED device, including a base layer and a first device region and a second device region formed on the base layer, and N*M-K light-emitting diodes are fabricated in the first device region , K discharge diodes are fabricated in the second device region, so that the total number of light-emitting diodes and discharge diodes integrated on the base layer is N*M, and the light-emitting diodes in the first device region are connected in series to form one light-emitting diode, And sequentially and continuously divided into n groups, each group of light-emitting diodes is connected in antiparallel with a discharge diode in the second device area, wherein, N, M, K, n are natural numbers, and N and M are not 1 at the same time, and n≤ N*M-K, K≤N*M/2.

Correspondingly, the present invention also provides a high-voltage nitride LED device, which includes a base layer and n units evenly distributed on the base layer, each unit is sequentially connected in series, and each unit includes a group of light-emitting diodes and a discharge diode antiparallel to the group of light emitting diodes, a group of light emitting diodes in each unit are sequentially connected in series, wherein n is a natural number.

After growing the LED epitaxial region by metal-organic chemical vapor deposition, the integrated discharge diode technology is used to effectively utilize the structural characteristics of the original chip without changing the LED epitaxial structure. LEDs are grouped, and each group of LEDs is integrated with the corresponding discharge diodes in antiparallel, not only to make high-voltage LED devices to improve the luminous flux of a group of LEDs, but also because the discharge diodes are generated synchronously with the LEDs during the manufacturing process. Therefore, when When a reverse electrostatic charge accumulates and instantly impacts the LED, the charge will be released by the discharge diode at any time through the discharge diode. Therefore, the antistatic performance is improved, the LED is prevented from being damaged by static electricity, the service life of the LED is extended, and the cost is reduced.

Description of drawings

Fig. 1 shows a schematic diagram of a high-voltage nitride LED circuit of the present invention.

Fig. 2 shows a schematic diagram of plane connection of a high-voltage nitride LED device of the present invention.

FIG. 3 shows a schematic cross-section A-A of the high-voltage nitride LED device shown in FIG. 2 .

Fig. 4 shows a schematic diagram of plane connection of another high-voltage nitride LED device of the present invention.

FIG. 5 shows a B-B cross-sectional schematic diagram of the high-voltage nitride LED device shown in FIG. 4 .

Wherein, the reference signs are explained as follows:

L100 LED all the way

L-1, L-2,..., L-n Each group of LEDs

L1, L2,..., Li,..., LN*M-K LED

L01, L02,..., L0j,..., L0n(L0K) discharge diode

D1 first device area D2 second device area

C1,...,Cj,...,Cn diode unit

200 Substrate 202 Low temperature nucleation layer 204 Non-doped nitride layer 206N-type nitride layer 208 Base layer 209 Multiple quantum wells 210 First P-type nitride layer 211 Second P-type nitride layer 212P-type nitride layer 213 Multiple epitaxial structure

214 substrate groove

216 N electrode of discharge diode 218 P electrode of discharge diode

220 conductive transparent layer

222 insulating layer

224 P-type electrode of light-emitting diode 226 N-type electrode of light-emitting diode

228 Light-emitting diode P-type electrode and discharge diode N-electrode connection metal

230 Light-emitting diode N-type electrode and discharge diode P electrode connection metal

More than 300 light-emitting diodes connected in series

Detailed ways

In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways different from those described here, and those skilled in the art can make similar extensions without violating the connotation of the present invention, so the present invention is not limited by the specific implementations disclosed below.

Secondly, the present invention is described in detail using schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, and the schematic diagram is only an example, and it should not be limited here. The protection scope of the present invention. In addition, the three-dimensional space dimensions of length, width and depth should be included in actual production.

Referring to FIG. 1 , a high-voltage nitride LED circuit provided by the present invention includes a plurality of light-emitting diodes connected in series end-to-end through P-type electrodes and N-type electrodes to form a light-emitting diode L100. The LEDs L100 of one path are continuously divided into n groups in sequence: L-1, L-2, ..., L-n, and each group of LEDs is connected in reverse parallel with a discharge diode (L-1 is connected in reverse parallel with discharge diode L01 , L-2 and L02 anti-parallel, ..., L-n and L0n anti-parallel), that is, the first and last P-type electrodes and N-type electrodes of each group of light-emitting diodes are connected with the N electrodes and P electrodes of the corresponding discharge diodes, where n is a natural number.

Wherein, the numbers of light emitting diodes included in each group of light emitting diodes may be the same or different, and each group of light emitting diodes is connected to different discharge diodes.

Based on the above-mentioned high-voltage nitride LED circuit, the present invention proposes a corresponding high-voltage nitride LED device and a manufacturing method thereof to realize the above-mentioned circuit, which will be described in detail below with reference to FIG. 2 to FIG. 5 .

Referring to FIG. 2 and FIG. 3 together, a high-voltage nitride LED device proposed by the present invention includes a base layer 208 and a first device region D1 and a second device region D2 formed on the base layer 208. The first N*M-K light-emitting diodes Li (1≤i≤N*M-K) are fabricated in the device region D1, and K discharge diodes L0j (1≤j≤K) are fabricated in the second device region D2, so that on the base layer The total number of integrated light-emitting diodes and discharge diodes is N*M, and the light-emitting diodes in the first device area D1 are connected in series to form a group of light-emitting diodes, and are sequentially divided into n groups, and each group of light-emitting diodes is connected with the second device area A discharge diode in D2 is connected in antiparallel, where N, M, K, and n are natural numbers, and N and M are not 1 at the same time, n≤N*M-K, K≤N*M/2.

Wherein, the P-type electrodes 224 and N-type electrodes 226 of each light-emitting diode are connected in series end to end to form a light-emitting diode, and the head-to-tail P-type electrodes 224 and N-type electrodes 226 of each group of light-emitting diodes are connected to the N-electrode 216 of a discharge diode. , P electrode 218, and each group of LEDs is connected to different discharge diodes.

Optionally, the number of light emitting diodes included in each group of light emitting diodes is the same or different.

Secondly, multiple high-voltage nitride LED devices are manufactured on one LED chip, and N*M light-emitting diodes and discharge diodes are used as a module, and the LED chip is split by slicing and splitting processes, and slicing and splitting are no longer performed in the module .

Then, each module is packaged as a high-voltage nitride LED and each high-voltage nitride LED is powered by a power supply.

For example, the total number of diodes integrated in a high-voltage nitride LED device in the present invention is 80, wherein, the number of light-emitting diodes made in the first device region D1 is 71, and the number K of discharge diodes made in the second device region D2 is 9; the light-emitting diodes are divided into n=9 groups, and the number of light-emitting diodes in each group can be 9, 9, 9, 6, 9, 6, 7, 7, 9 in sequence, and each group of light-emitting diodes is connected with one The discharge diodes are connected in antiparallel. Certainly, the number of light emitting diodes included in each group of light emitting diodes may also be the same. When 70 light-emitting diodes are fabricated in the first device region D1 and 10 discharge diodes are fabricated in the second device region D2, the light-emitting diodes can be divided into 10 groups, each group includes 7 light-emitting diodes, and each group is connected to a discharge diode anti-parallel.

The above examples are only used to illustrate the number and group connection methods of light-emitting diodes and discharge diodes in high-voltage nitride LED devices, and are not used to limit the present invention. As long as within a reasonable layout range, M, N, K, n and each The number of light emitting diodes included in the group of light emitting diodes can be adjusted.

Referring to Fig. 3, the manufacturing method of the above-mentioned high-voltage nitride LED device includes the following steps:

S100: growing a multi-layer epitaxial structure 213 on the base layer by using a metal organic chemical vapor deposition method.

The base layer 208 includes a substrate 200 , a low-temperature nucleation layer 202 , an undoped nitride layer 204 , and an N-type nitride layer 206 from bottom to top.

The multi-layer epitaxial structure 213 includes multiple quantum wells 209 and a P-type nitride layer 212 in sequence from bottom to top.

The P-type nitride layer 212 includes a first P-type nitride layer 210 and a second P-type nitride layer 211 from bottom to top.

S101: Etching the multi-layer epitaxial structure stops at the N-type nitride layer.

The etching of the multi-layer epitaxial structure is stopped at the N-type nitride layer, which is used for preparing light-emitting diodes and discharge diode electrodes in subsequent processes.

S102: Etching the base layer to stop at the substrate to form substrate grooves.

The base layer 208 is etched, and the etching stops on the substrate 200 to form the substrate groove 214 . The substrate groove 214 passes through the multilayer epitaxial structure 213, the N-type nitride layer 206, the undoped nitride layer 204, and the low-temperature nucleation layer 202 to connect the light-emitting diodes, discharge diodes, and The light-emitting diode is isolated from the discharge diode.

S103: Deposit a conductive transparent layer 220 on the second P-type nitride layer.

A conductive transparent layer 220 is deposited on the second P-type nitride layer 211 , and the conductive transparent layer 220 can be used to prepare a P-electrode of a light-emitting diode and a discharge diode in a subsequent process.

S104: According to the circuit requirements of the high-voltage nitride LED, fabricate the P electrode and the N electrode of the light emitting diode and the discharge diode on the base layer.

According to the circuit requirements of the high-voltage nitride LED, the base layer 208 is divided into a first device region D1 for subsequent fabrication of a light emitting diode and a second device region D2 for fabrication of a discharge diode (see FIG. 2 ).

Make P-type electrodes 224 and N-type electrodes 226 of N*M-K light-emitting diodes in the first device region D1 on the base layer 208, and make P-type electrodes 218 and N-type electrodes 216 of K discharge diodes in the second device region D2 , where N, M, and K are natural numbers, and K≤N*M/2.

Wherein, the isolated second device region D2 should be as small as possible, so that the size of the discharge diode made on the second device region D2 should be as small as possible under the condition of ensuring the process, and the shape and position of the second device region D2 should be different. Limited to the situation shown in FIG. 2 , the shape and position of D2 can also be adjusted according to the layout shape of the first device region D1 used to fabricate light emitting diodes, as long as the discharge diodes are arranged in a single region, that is, in the second device region D2 In addition, the first device region D1 and the second device region D2 can be assembled into a rectangular pattern.

For example, the first device region D1 may be an "L" shape open in any direction, then the corresponding second device region D2 is located at one corner and forms a rectangle with D1 (see Figure 2); or the first device region If the region D1 is in the shape of "back", then the corresponding second device region D2 is located in the center and forms a rectangle with D1; or the first device region D1 can also be "concave" type opening in any direction, then the corresponding The second device region D2 can be a "mouth" or "convex" type and form a rectangle with D1; or the first device region D1 is a "convex" type, then the corresponding second device region D2 can be a "concave" ” and form a rectangle with D1.

The shapes of the first device region D1 and the second device region D2 in the present invention are not limited to the above examples, as long as the shapes of the first device region D1 and the second device region D2 can be completely matched into an effective rectangle graphics, without affecting subsequent slicing and splitting processes, and the arrangement of components is compact, and the layout and wiring are reasonable, so as to improve the utilization efficiency of the multilayer epitaxial structure 213 .

Due to the adoption of a manufacturing process compatible with common LEDs, no additional steps are required, and the problems of increased area and cost of LED chips caused by external connection of discharge diodes are solved.

S105: growing an insulating layer except for the electrode region.

Wherein, the insulating layer 222 can use materials such as SiO2 and the like.

S106: Carry out group design according to the circuit requirements of the high-voltage nitride LED, and complete the metal interconnection of the light-emitting diode, the discharge diode, and the electrodes of the light-emitting diode and the discharge diode at one time according to the pre-design.

In order to realize a high-voltage nitride LED device provided by the present invention, a plurality of light-emitting diodes should be grouped and designed in advance according to the circuit requirements of the high-voltage nitride LED, and divided into n groups (n is a natural number). Then, metal is deposited on the electrode, and the ohmic contact of each electrode of the light-emitting diode and the discharge diode is formed once by this step, and the connection metal 228 of the P-type electrode 224 of the light-emitting diode and the N electrode 216 of the discharge diode, and the N electrode of the light-emitting diode. Type electrode 226 and the connecting metal 230 of the P electrode 218 of the discharge diode, so that the head and tail P-type electrodes and N-type electrodes of each group of light-emitting diodes are connected with the N electrodes and P electrodes of the corresponding discharge diodes. The light emitting diodes are sequentially connected in series with metal wires 300 .

After this step, all the light-emitting diodes in the first device region D1 are connected in series, and at the same time, the sequential connection between n groups of light-emitting diodes is completed, and each group of light-emitting diodes is connected to the corresponding discharge diode in reverse, realizing the realization based on the above The circuit of the high voltage nitride LED.

S107: A plurality of the high-voltage nitride LED devices are manufactured on one LED chip, and N*M light-emitting diodes and discharge diodes are used as a module, and the LED chip is split by slicing and splitting processes, and the slicing and splitting are no longer performed in the module , where there may be K discharge diodes in each module.

S108: Package each module into a high-voltage nitride LED and each of the high-voltage nitride LEDs is powered by a power supply (not shown in the figure).

Referring to Fig. 4 and referring to Fig. 5 together, another high-voltage nitride LED device is proposed in the present invention, which includes a base layer 208 and n units C1, ..., Cj, ... uniformly distributed on the base layer. ., Cn, each unit Cj includes a group of light-emitting diodes and a discharge diode L0j connected in antiparallel with the group of light-emitting diodes, a group of light-emitting diodes in each unit are connected in series in turn, each unit They are serially connected sequentially in sequence, where n is a natural number, 1≤j≤n.

Wherein, the P-type electrodes 224 and N-type electrodes 226 of each light-emitting diode in each unit are connected in series end to end to form a group of light-emitting diodes, and the head-to-tail P-type electrodes, N-type electrodes of the group of light-emitting diodes and the The N electrode 216 and the P electrode 218 are respectively connected. The first and last P-type electrodes and N-type electrodes of a group of light-emitting diodes in each unit are sequentially and continuously connected in series between each unit.

Optionally, the number of light emitting diodes included in each unit is the same or different.

Referring to Fig. 5, the manufacturing method of the above-mentioned high-voltage nitride LED device includes the following steps:

For the manufacturing steps and processes from S100 to S103, refer to the manufacturing steps and processes described in S100 to S103 in FIG. 3 , which will not be repeated here.

S104: According to the circuit requirements of the high-voltage nitride LED, fabricate the P electrode and the N electrode of the light emitting diode and the discharge diode on the base layer.

According to the circuit requirements of the high-voltage nitride LED described in FIG. 4, the base layer 208 is evenly divided into n units for subsequent processes, and each unit is used to manufacture a plurality of light-emitting diodes and a discharge diode, where n is Natural numbers (see Figure 4).

In each unit on the base layer 208, make P-type electrodes 224 and N-type electrodes 226 of N*M-K light-emitting diodes and make P-type electrodes 218 and N-type electrodes 216 of K discharge diodes, wherein N, M, K is a natural number, K≤N*M/2.

Wherein, the size of the isolated discharge diode is as small as possible under the condition of ensuring the process. The shape and position of the discharge diode are not limited to the situation shown in FIG. In any area of each unit, as long as the components are arranged compactly and the layout and wiring are reasonable, the utilization efficiency of the multilayer epitaxial structure 213 can be improved.

S105: growing an insulating layer except for the electrode region.

Wherein, the insulating layer 222 can use materials such as SiO2 and the like.

S106: Carry out unit design according to the circuit requirements of the high-voltage nitride LED, and complete the metal interconnection of the light-emitting diode, the discharge diode, and the electrodes of the light-emitting diode and the discharge diode at one time according to the pre-design.

In order to realize a high-voltage nitride LED device provided by the present invention, the light-emitting diode and the discharge diode should be divided into n units (n is a natural number) in advance according to the circuit requirements of the high-voltage nitride LED. Then, metal is deposited on the electrode, and the ohmic contact of each electrode of the light-emitting diode and the discharge diode is formed once by this step, and the connection metal 228 of the P-type electrode 224 of the light-emitting diode and the N electrode 216 of the discharge diode, and the N electrode of the light-emitting diode. Type electrode 226 and the connecting metal 230 of the P electrode 218 of the discharge diode, so that the first and last P-type electrodes and N-type electrodes of the unit Cj light-emitting diode are connected with the N electrode and the P electrode of a discharge diode, and at the same time, the luminescence in the unit is formed. The wiring metal 300 of the diodes is connected in series in series.

Referring to FIG. 4 , the P-type electrodes and N-type electrodes of each light-emitting diode in each unit are connected in series end-to-end through the wiring metal 300 to form a group of light-emitting diodes, and each unit includes a group of light-emitting diodes and the A discharge diode connected in reverse to a group of light emitting diodes, the reverse connection is that the head and tail P-type electrodes and N-type electrodes of a group of light-emitting diodes in each unit are respectively connected to the N electrode and P electrode of a discharge diode, Each unit is sequentially and continuously connected in series through the first and last P-type electrodes and N-type electrodes of a group of light-emitting diodes in each unit.

After this step, all the light-emitting diodes in each unit are connected in series and reversely connected with the corresponding discharge diode, and at the same time, the sequential connection between n units is completed, and the circuit based on the above-mentioned high-voltage nitride LED is realized. .

Due to the use of a manufacturing process compatible with conventional LEDs, no additional steps are required.

S107: A plurality of the high-voltage nitride LED devices are manufactured on one LED chip, and n units are used as a module, and the LED chip is split through a slicing and splitting process, and the slicing and splitting are no longer performed in the module.

S108: Package each module into a high-voltage nitride LED, and each high-voltage nitride LED is powered by a power supply.

It can be seen from any of the above-mentioned high-voltage nitride LED device structures that after the LED structure is grown by the metal organic chemical vapor deposition process, the integrated light-emitting diode and the discharge diode are manufactured directly on the LED structure using the usual manufacturing process, which not only prevents the LED Being damaged by static electricity prolongs the service life of the LED and simplifies the production process.

The fabrication method of any one of the above-mentioned high-voltage nitride LED devices can adopt a front-side or flip-chip packaging method. Preferably, a flip-chip package is used to emit light from the side of the base layer, which can improve light extraction efficiency and heat dissipation.

The light-emitting diode Li, light-emitting diode group L-j, discharge diode L0j, and unit Cj involved in the above-mentioned different embodiments of the present invention are not limited to the number of the above-mentioned embodiments, and can be prepared according to actual needs. In addition, the rectified AC power supply device can also be used for the LED chip of the present invention, which also belongs to the protection scope of this patent.

According to the different embodiments provided in the present invention, the light-emitting diodes connected with the discharge diodes are produced through the above steps, which avoids the fact that the discharge diodes were not prepared synchronously in the manufacturing process in the past, and the completion of the process of the light-emitting diodes is due to poor antistatic performance. The high risk of being broken down by an instantaneous extremely short current improves the antistatic ability of the high-voltage nitride LED device and prolongs the service life of the LED, thereby obtaining a high-voltage integrated reverse-parallel LED light-emitting device.

Although the present invention is disclosed as above with preferred embodiments, it is not used to limit the claims. Any person skilled in the art can make possible changes and modifications without departing from the spirit and scope of the present invention. Therefore, the present invention The scope of protection should be based on the scope defined by the claims of the present invention.

Claims (17)

1. A high-voltage nitride LED circuit, characterized in that: a plurality of light-emitting diodes are connected in series to form one light-emitting diode, and the one-way light-emitting diodes are continuously divided into n groups in sequence, and each group of light-emitting diodes is connected in antiparallel with a discharge diode, where n is a natural number. 2. The high-voltage nitride LED circuit according to claim 1, characterized in that: each group of light-emitting diodes includes the same or different numbers of light-emitting diodes. 3. The high-voltage nitride LED circuit according to claim 1, characterized in that: each of the light emitting diodes has a P-type electrode and an N-type electrode, and the P-type electrodes and the N-type electrodes of each light-emitting diode are connected in series end to end to form LEDs all the way. 4. The high-voltage nitride LED circuit according to claim 3, characterized in that: each of the discharge diodes has a P electrode and an N electrode, and the head and tail P-type electrodes and N-type electrodes of each group of light-emitting diodes are respectively connected to the discharge diodes. The P electrode and the N electrode are reversely connected. 5. The high voltage nitride LED circuit according to claim 1, wherein each group of light emitting diodes is connected to a different discharge diode. 6. A high-voltage nitride LED device, characterized in that: it includes a base layer and a first device region and a second device region formed on the base layer, and N*M-K light-emitting diodes are fabricated in the first device region, K discharge diodes are fabricated in the second device region, so that the total number of integrated light-emitting diodes and discharge diodes on the base layer is N*M, and the light-emitting diodes in the first device region are connected in series to form one light-emitting diode, and Continuously divided into n groups in order, each group of light-emitting diodes is connected in antiparallel with a discharge diode in the second device area, where N, M, K, and n are natural numbers, and N and M are not 1 at the same time, and n≤N *M-K, K≤N*M/2. 7. The high-voltage nitride LED device according to claim 6, characterized in that the number of light-emitting diodes included in each group of light-emitting diodes is different or the same. 8. The high-voltage nitride LED device according to claim 6, characterized in that: each of the light emitting diodes has a P-type electrode and an N-type electrode, and the P-type electrodes and the N-type electrodes of each light-emitting diode are connected in series end to end to form LEDs all the way. 9. The high-voltage nitride LED device according to claim 8, characterized in that: each discharge diode has a P electrode and an N electrode, and the first and last P-type electrodes and N-type electrodes of each group of light-emitting diodes are respectively connected to a discharge diode The P electrode and the N electrode are reversely connected. 10. The high voltage nitride LED device according to claim 6, wherein each group of light emitting diodes is connected to a different discharge diode. 11. The high-voltage nitride LED device according to claim 6, characterized in that: a plurality of the high-voltage nitride LED devices are manufactured on an LED chip, and N*M light-emitting diodes and discharge diodes are used as a module, through The slicing and splitting process splits the LED chip, and the slicing and splitting are no longer performed in the module. 12. The high-voltage nitride LED device according to claim 11, wherein each module is packaged as a high-voltage nitride LED and each high-voltage nitride LED is powered by a power supply. 13. A high-voltage nitride LED device, characterized in that: it includes a base layer and n units uniformly distributed on the base layer, and each unit includes a group of light-emitting diodes and a group of light-emitting diodes connected in antiparallel A discharge diode, a group of light emitting diodes in each unit are sequentially connected in series, and each unit is sequentially connected in series, wherein n is a natural number. 14. The high voltage nitride LED device according to claim 13, characterized in that: the number of light emitting diodes included in each unit is different or the same. 15. The high-voltage nitride LED device according to claim 13, characterized in that: each of the light emitting diodes has a P-type electrode and an N-type electrode, and the P-type electrodes of each light-emitting diode in each unit , The N-type electrodes are connected end to end in series to form a group of light emitting diodes. 16. The high-voltage nitride LED device according to claim 15, characterized in that: each of the discharge diodes has a P electrode and an N electrode, and the first and last P-type electrodes and N-type electrodes of a group of light-emitting diodes are connected to one of the discharge diodes. The P electrode and the N electrode are reversely connected. 17. The high-voltage nitride LED device according to claim 15, characterized in that: the units are sequentially connected in series through the first and last P-type electrodes and N-type electrodes of a group of light-emitting diodes in each unit.

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