CN104347775B - LED chip with graphical N electrode - Google Patents
LED chip with graphical N electrode Download PDFInfo
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- CN104347775B CN104347775B CN201410508383.3A CN201410508383A CN104347775B CN 104347775 B CN104347775 B CN 104347775B CN 201410508383 A CN201410508383 A CN 201410508383A CN 104347775 B CN104347775 B CN 104347775B
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- electrode
- led chip
- barrier layer
- graphical
- central area
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- 230000004888 barrier function Effects 0.000 claims abstract description 34
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- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000000605 extraction Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 241000209094 Oryza Species 0.000 description 3
- 235000007164 Oryza sativa Nutrition 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 235000009566 rice Nutrition 0.000 description 3
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- 206010040844 Skin exfoliation Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
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- 238000002347 injection Methods 0.000 description 1
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- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Invention is related to a kind of LED chip with graphical N electrode, due to being formed with reflective extremely weak barrier layer at the fringe region between LED chip, N electrode is extended to the surface on barrier layer, on the one hand because N electrode extension is on the weak barrier layer of auroral poles, the reflection efficiency of speculum is not influenceed；On the other hand the N electrode of extension can make CURRENT DISTRIBUTION more uniform, improve luminous and radiating the uniformity of LED chip.
Description
Technical field
Field, more particularly to a kind of LED chip with graphical N electrode are manufactured the present invention relates to LED.
Background technology
With the requirement more and more higher that LED is imitated in the progressively application of lighting field, market to white light LED light, GaN base is vertical
Structure LED has good heat-sinking capability, can bear Bulk current injection, and such a light emitting diode (LED) chip with vertical structure can be suitable
In several formal dress fabric chips, equivalent cost only has the part of positive assembling structure.Therefore, GaN base vertical structure LED is market
Institute to, be semiconductor lighting development inexorable trend.Compared with traditional planar structure LED, vertical structure LED has many excellent
Point：Two electrodes of vertical structure LED are respectively in LED both sides, and electric current almost all flows vertically through epitaxial layer, without lateral flow
Electric current, homogeneous current distribution, the heat of generation reduces；Using bonding with the method peeled off by the bad Sapphire Substrate of heat conduction
Remove, change good conductivity and the substrate with high heat conductance into, can effectively radiate；N-GaN layers are exiting surface, and the layer has
Certain thickness, is easy to make surface micro-structure, to improve light extraction efficiency.In a word, compared with conventional planar structure, vertical junction
Structure has obvious advantage in terms of light extraction, radiating.
With the high speed development of semiconductor technology, LED internal quantum can reach more than 90%, and internal quantum is imitated
The raising of rate is not notable, is influenceed by factors, such as LED structure, electrode shape, electrode material, current expansion thickness
Degree etc., the leading factor improved as restriction LED luminous efficiencies.Relative to method (such as high reflection of other raising LED luminances
Film, substrate desquamation, surface coarsening etc.) for, most easy-operating is that the electrode shape of chip is optimized, and electrode shape is to light
Output influence is very big, if current spread is insufficient, uneven, light extraction can be caused to reduce, by the shape for rationally designing electrode
LED luminous efficiency can be improved.
In theory, in the place more remote from electrode, electric current is smaller, and brightness is lower.For existing vertical electrode structure technology,
Traditionally electrode shape is best for the I-V performances of " ten " font or the LED chip of " rice " word shape.But " ten " font or " rice "
Font electrode in the chips divide by center portion, and because electrode compares concentration, electric current is also relatively concentrated, and so causes LED current point
Cloth is not uniform enough, and particularly to the marginal portion of table top, CURRENT DISTRIBUTION is extremely uneven so that the brightness very little of marginal portion.
Near central circular surrounding them and slotting finger, current crowding, in chip edge part, electric current is small.Current trend is from centre to side
Edge is less and less, and brightness is also more and more weaker.
General usually using argent as speculum, but is due to Ag easy diffusion when making vertical structure LED,
One layer of barrier layer (barrier) can be made and wrap speculum, each chip circumference, which has general 5 μm~10 μm regions, not to be had
Reflecting layer (such as Fig. 1), in Fig. 1, speculum 20 is blocked layer 10 and surrounded, and because speculum 20 is used for reflection light, and stops
Layer 10 is due to material limitation, and reflection light is extremely weak, causes the region reflection light to have significant portion loss, and one on evaporation
As " ten " font or " rice " font N electrode after, this zone current distribution it is also uneven, to light extraction contribution also greatly reduce.
The content of the invention
, can be anti-using edge barrier layer it is an object of the invention to provide a kind of LED chip with graphical N electrode
The weak defect of light, forms N electrode, makes CURRENT DISTRIBUTION more uniform above it, improves luminous efficiency.
To achieve these goals, the present invention proposes a kind of LED chip with graphical N electrode, including：Reflection
Mirror, barrier layer, epitaxial layer and N electrode, the speculum are formed in the barrier layer and expose a surface of speculum, institute
State epitaxial layer to be formed on the surface on the speculum and barrier layer, the N electrode is formed at the surface of the epitaxial layer, described
N electrode includes central area and inserts finger, and the slotting finger-type of a part is into the epi-layer surface directly over the barrier layer, the slotting finger
The surface on the barrier layer is covered in whole or in part, and the slotting finger is connected with the central area.
Further, the epitaxial layer includes P-GaN, SQW and the N-GaN sequentially formed, and the P-GaN formation exists
On the surface on the speculum and barrier layer, the N electrode is formed at the surface of the N-GaN.
Further, slotting refer to is strip, is point-symmetrically arranged along the central area.
Further, the slotting finger-type is into matrix pattern or octagon.
Further, the width range of the slotting finger is 3 μm~10 μm.
Further, the central area is circular or polygon.
Further, when circle is in the central area, the diameter range of the central area is 50 μm -120 μm；It is described
When central area is polygon, the side size range of the central area is 30 μm -100 μm.
Further, the material of the N electrode is Cr, Al, Ti, Pt, Au one or more.
Compared with prior art, the beneficial effects are mainly as follows：At the fringe region between LED chip
Reflective extremely weak barrier layer is formed with, N electrode is extended to the surface on barrier layer, on the one hand because N electrode extension is reflective
On extremely weak barrier layer, the reflection efficiency of speculum is not influenceed；On the other hand the N electrode of extension can make CURRENT DISTRIBUTION more equal
It is even, improve luminous and radiating the uniformity of LED chip.
Brief description of the drawings
Fig. 1 surrounds the structural representation of speculum for barrier layer in the prior art；
Fig. 2 is the top view of the N electrode of LED chip in first embodiment of the invention；
Fig. 3 for along along Fig. 2 A-A ' to diagrammatic cross-section；
Fig. 4 is the top view of the N electrode of LED chip in second embodiment of the invention.
Embodiment
The LED chip with graphical N electrode of the present invention is described in more detail below in conjunction with schematic diagram, its
In illustrate the preferred embodiments of the present invention, it should be appreciated that those skilled in the art can change invention described herein, and
Still the advantageous effects of the present invention are realized.Therefore, description below is appreciated that knowing extensively for those skilled in the art
Road, and it is not intended as limitation of the present invention.
For clarity, not describing whole features of practical embodiments.In the following description, it is not described in detail known function
And structure, because they can make the present invention chaotic due to unnecessary details.It will be understood that opening in any practical embodiments
In hair, it is necessary to make a large amount of implementation details to realize the specific objective of developer, such as according to relevant system or relevant business
Limitation, another embodiment is changed into by one embodiment.Additionally, it should think that this development is probably complicated and expended
Time, but it is only to those skilled in the art routine work.
The present invention is more specifically described by way of example referring to the drawings in the following passage.Will according to following explanation and right
Book is sought, advantages and features of the invention will become apparent from.It should be noted that, accompanying drawing is using very simplified form and using non-
Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Embodiment one
Fig. 2 and Fig. 3 are refer to, in the present embodiment, it is proposed that a kind of LED chip with graphical N electrode, including：
Speculum 110, barrier layer 100, epitaxial layer and N electrode 300, the speculum 110 are formed in the barrier layer 100 and exposure
Go out a surface of speculum 110, the epitaxial layer is formed on the surface on the speculum 110 and barrier layer 100, the N electricity
Pole 300 is formed at the surface of the epitaxial layer, and the N electrode 300 includes central area 310 and inserted to refer to 320, and a part, which is inserted, to be referred to
320 epi-layer surfaces formed directly over the barrier layer 100, the slotting finger 320 is covered in the resistance in whole or in part
The surface of the surface epitaxial layer of barrier 100, the slotting finger 320 is connected with the central area 310.
Specifically, refer to Fig. 3, the epitaxial layer includes P-GaN210, SQW 220 and the N- sequentially formed
GaN230, the P-GaN210 formation is on the surface on the speculum 110 and barrier layer 100, and the N electrode 300 is formed at
The surface of the N-GaN230, wherein, specific epitaxial layer is not showed that in Fig. 2.
In the present embodiment, the slotting finger 320 is strip, is point-symmetrically arranged along the central area 310, i.e. institute
State to insert and refer to 320 and form matrix patterns, with certain right angle, slotting 320 width range of referring to is 3 μm~10 μm, e.g. 5 μm,
Because the width on barrier layer 100 is usually 5 μm~10 μm, barrier layer 100 can be covered in whole or in part just by inserting finger 320
Top, this can be determined according to the demand of technique.
In the present embodiment, the central area 310 is circle, and the diameter range of central area 310 is 50 μm -120 μm,
E.g. 100 μm；The material of the N electrode is the one or more of Cr, Al, Ti, Pt, Au or metalloid.
In the present embodiment, refer to 320 because N electrode includes inserting, electric current can be made in the more uniform of N-GaN EDS maps,
Improve luminous and generate heat, increase the luminous efficiency of LED chip, formed further, since inserting and referring to 320 on reflective extremely weak barrier layer
100 surface, will not block the reflection efficiency of more speculum 110.
Embodiment two
In the present embodiment, the LED chip with graphical N electrode of proposition is the improvement to embodiment one, difference
It is in and is shaped as octagon in, the slotting finger 320 of N electrode 300, another difference is in the polygon with central area 310, institute
The side size range for stating central area is 30 μm -100 μm, e.g. 60 μm.Remaining is identical with embodiment one, does not go to live in the household of one's in-laws on getting married herein
State, specifically may be referred to embodiment one.
Because the slotting finger 320 in embodiment one is matrix pattern, its corner has 90 °, causes CURRENT DISTRIBUTION at this more
It is intensive, make the CURRENT DISTRIBUTION of the areas adjacent uneven, luminous efficiency is have impact on to a certain extent.Therefore, it refer to Fig. 4
(being also to show specific epitaxial layer in Fig. 4), in the present embodiment, slotting finger 320 is revised as by the matrix pattern in embodiment one
Octagon, can solve the problem that the current concentrated phenomenon of corner, and reduce the light-emitting area blocked, make electric current in N-GaN EDS maps
It is more uniform, further improve luminous efficiency.In addition, a part, which is inserted, refers to 320 still stops of the formation in not reflected light
On layer 100, and the reflective surface area of vacant more speculum 100.
To sum up, in the LED chip provided in an embodiment of the present invention with graphical N electrode, due between LED chip
Reflective extremely weak barrier layer is formed with fringe region, N electrode is extended to the surface on barrier layer, on the one hand due to N electrode
Extend on reflective extremely weak barrier layer, the reflection efficiency of speculum is not influenceed；On the other hand the N electrode of extension can make electric current
Distribution is more uniform, improves luminous and radiating the uniformity of LED chip.
The preferred embodiments of the present invention are above are only, any restriction effect is not played to the present invention.Belonging to any
Those skilled in the art, in the range of technical scheme is not departed from, to the invention discloses technical scheme and
Technology contents make the variation such as any type of equivalent substitution or modification, belong to the content without departing from technical scheme, still
Belong within protection scope of the present invention.
Claims (6)
1. a kind of LED chip with graphical N electrode, it is characterised in that including：Speculum, barrier layer, epitaxial layer and N electricity
Pole, the speculum is formed in the barrier layer and exposes a surface of speculum, and the epitaxial layer is formed at described anti-
On the surface for penetrating mirror and barrier layer, the N electrode is formed at the surface of the epitaxial layer, the N electrode include central area and
Insert and refer to, the slotting finger-type of a part is into the epi-layer surface directly over the barrier layer, and the slotting finger is covered in whole or in part
The surface of epitaxial layer directly over the barrier layer, the slotting finger is connected with the central area, and the slotting finger-type is into octagon.
2. there is the LED chip of graphical N electrode as claimed in claim 1, it is characterised in that the epitaxial layer is included successively
P-GaN, SQW and the N-GaN of formation, the P-GaN formation is on the surface on the speculum and barrier layer, the N electrode
It is formed at the surface of the N-GaN.
3. there is the LED chip of graphical N electrode as claimed in claim 1, it is characterised in that the width range of the slotting finger
It is 3 μm~10 μm.
4. there is the LED chip of graphical N electrode as claimed in claim 1, it is characterised in that the central area is circle
Or polygon.
5. there is the LED chip of graphical N electrode as claimed in claim 4, it is characterised in that the central area is circle
When, the diameter range of the central area is 50 μm -120 μm；When the central area is polygon, the side of the central area
Long scope is 30 μm -100 μm.
6. there is the LED chip of graphical N electrode as claimed in claim 1, it is characterised in that the material of the N electrode is
Cr, Al, Ti, Pt, Au one or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410508383.3A CN104347775B (en) | 2014-09-28 | 2014-09-28 | LED chip with graphical N electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410508383.3A CN104347775B (en) | 2014-09-28 | 2014-09-28 | LED chip with graphical N electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104347775A CN104347775A (en) | 2015-02-11 |
| CN104347775B true CN104347775B (en) | 2017-10-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410508383.3A Expired - Fee Related CN104347775B (en) | 2014-09-28 | 2014-09-28 | LED chip with graphical N electrode |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106972090A (en) * | 2017-04-14 | 2017-07-21 | 华南理工大学 | A kind of arc line shaped N electrode and light emitting diode (LED) chip with vertical structure |
| CN106972089B (en) * | 2017-04-14 | 2023-09-22 | 华南理工大学 | Straw-shaped N electrode and vertical structure LED chip |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101132043A (en) * | 2006-08-18 | 2008-02-27 | 克里公司 | Diffusion barrier for light emitting diodes |
| CN101159307A (en) * | 2007-11-16 | 2008-04-09 | 北京工业大学 | Emitting surface semiconductor LED with nanostructure and its preparing process |
| CN101442092A (en) * | 2008-11-14 | 2009-05-27 | 厦门乾照光电有限公司 | High-brightness LED and method of manufacturing the same |
| CN102255022A (en) * | 2010-05-18 | 2011-11-23 | 首尔Opto仪器股份有限公司 | High-efficiency Light-emitting Diode |
| CN102468393A (en) * | 2010-10-29 | 2012-05-23 | Lg伊诺特有限公司 | Light emitting device |
| CN103765615A (en) * | 2011-06-24 | 2014-04-30 | 克利公司 | LED structure with enhanced mirror reflectivity |
-
2014
- 2014-09-28 CN CN201410508383.3A patent/CN104347775B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101132043A (en) * | 2006-08-18 | 2008-02-27 | 克里公司 | Diffusion barrier for light emitting diodes |
| CN101159307A (en) * | 2007-11-16 | 2008-04-09 | 北京工业大学 | Emitting surface semiconductor LED with nanostructure and its preparing process |
| CN101442092A (en) * | 2008-11-14 | 2009-05-27 | 厦门乾照光电有限公司 | High-brightness LED and method of manufacturing the same |
| CN102255022A (en) * | 2010-05-18 | 2011-11-23 | 首尔Opto仪器股份有限公司 | High-efficiency Light-emitting Diode |
| CN102468393A (en) * | 2010-10-29 | 2012-05-23 | Lg伊诺特有限公司 | Light emitting device |
| CN103765615A (en) * | 2011-06-24 | 2014-04-30 | 克利公司 | LED structure with enhanced mirror reflectivity |
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| CN104347775A (en) | 2015-02-11 |
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